Transistors 2SB1030, 2SB1030A Silicon PNP epitaxial planar type For low-frequency amplification Complementary to 2SD1423 and 2SD1423A Unit: mm 4.00.2 Features 7.6 (0.8) 3.00.2 2.00.2 (0.8) 0.75 max. 15.60.5 * Optimum for high-density mounting * Allowing supply with the radial taping Absolute Maximum Ratings Ta = 25C Parameter Collector-base voltage (Emitter open) 2SB1030 Symbol Rating Unit VCBO -30 V -60 2SB1030A 0.45+0.20 -0.10 0.45+0.20 -0.10 (2.5) (2.5) -25 V Collector-emitter voltage 2SB1030 (Base open) 2SB1030A VCEO Emitter-base voltage (Collector open) VEBO -7 V Collector current IC - 0.5 A Peak collector current ICP -1 A Collector power dissipation PC 300 mW Junction temperature Tj 150 C Storage temperature Tstg -55 to +150 C 0.70.1 -50 1 2 3 1: Emitter 2: Collector 3: Base NS-B1 Package Electrical Characteristics Ta = 25C 3C Parameter Symbol Collector-base voltage (Emitter open) 2SB1030 Collector-emitter voltage (Base open) 2SB1030 VCBO Conditions IC = -10 A, IE = 0 Min VCEO IC = -2 mA, IB = 0 -30 Unit V -25 V -50 2SB1030A Emitter-base voltage (Collector open) VEBO IE = -10 A, IC = 0 Collector-base cutoff current (Emitter open) ICBO VCB = -20 V, IE = 0 Collector-Emitter cutoff current (Base open) ICEO VCE = -20 V, IB = 0 Forward current transfer ratio hFE1 * VCE = -10 V, IC = -150 mA 85 hFE2 VCE = -10 V, IC = -500 mA 40 Collector-emitter saturation voltage VCE(sat) IC = -300 mA, IB = -30 mA Transition frequency Max -60 2SB1030A fT Collector output capacitance (Common base, input open circuited) Typ Cob -7 V - 0.1 A -1 A 340 - 0.35 - 0.60 VCB = -10 V, IE = 50 mA, f = 200 MHz 120 VCB = -10 V, IE = 0, f = 1 MHz 3.5 V MHz 15.0 pF Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. 2. *: Rank classification Rank Q R S hFE1 85 to 170 120 to 240 170 to 340 Publication date: March 2003 SJC00065BED 1 2SB1030, 2SB1030A IC VCE Collector power dissipation PC (mW) Ta = 25C -1.0 Collector current IC (A) 300 200 - 0.8 IB = -10 mA -9 mA -8 mA -7 mA -6 mA -5 mA -4 mA - 0.6 - 0.4 -3 mA -2 mA - 0.2 -1 mA 100 80 120 0 160 -2 0 Forward current transfer ratio hFE Ta = 75C 25C -25C - 0.1 - 0.1 -1 400 300 Ta = 75C 200 100 0 - 0.01 -10 25C -25C - 0.1 -1 -10 NV IC 240 IE = 0 f = 1 MHz Ta = 25C 200 Noise voltage NV (mV) 12 8 VCE = -10 V Ta = 25C Function = FLAT 160 120 80 Rg = 100 k 22 k 4 40 4.7 k -10 - 0.1 -100 Collector-base voltage VCB (V) 0 -10 -100 Collector current IC (A) SJC00065BED -1 -10 Collector current IC (A) 160 VCB = -10 V Ta = 25C 120 80 40 0 0.1 1 10 Emitter current IE (mA) Collector current IC (A) 16 0 -1 - 0.01 - 0.01 fT I E 500 Cob VCB Collector output capacitance C (pF) (Common base, input open circuited) ob -12 VCE = -10 V Collector current IC (A) 20 -10 Ta = -25C 25C 75C -1 hFE IC -10 - 0.01 - 0.01 -8 600 IC / IB = 10 -1 -6 -10 Collector-emitter voltage VCE (V) VCE(sat) IC -100 -4 IC / IB = 10 - 0.1 Transition frequency fT (MHz) 40 Ambient temperature Ta (C) Collector-emitter saturation voltage VCE(sat) (V) -100 400 0 2 VBE(sat) IC -1.2 Base-emitter saturation voltage VBE(sat) (V) PC Ta 500 -1 000 100 Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technologies described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. 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