oe SATURATED SWITCHES (Cont.) PNP Transistors Type Case Yoao | Vceo | Yeeo | 'ceo y., hep le Veg | Veetsa = VBeisat) 2 te | Cob fy ig | tort | NF Test | Process No. Styl (v) v) wv) | ina @ @ & (V) & (vi (ma) | (pF) (MHz) @ ins) | (4B) | Cong No. ve Min | Min | Min | Max ') | Min Max (mA) (v) Max Min Max Max | Min Max "A! | max | Max | onaiter 2N5140 TO-106 5 5 4 50 3 70 50 1 0.75 50 | 5 400 10 | 20 7 65 ICES 30 1 05 0.2 12 10 20 140 ~=10 1 2N5141 TO-106 6 6 6 100 4 15 1 2 0.2 110 10 (| 7 300 20 | 150 3 64 ICES 25 10 2 025 O08 125 30 30 30 2 06 0 100 15 100 5 2N5910 TO-106 20 20 45 | 10 20 | 30 120~=10 03 0.5 50 |} 3 700 10 | 20 7 65 MPS3638 TO-92(70) 6 6 4 30. 120 10 0.3 0.75 095 10 | 35 | 500 10 | 25 6 65 20 50 1 016 O88 1 10 300 10 | 60 5 0.5 15 50 MPS3640 T0-92(70} 12 12 4 10 6 30 120 10 0.3 0.2 08 1 10 | 35 | 500 10 | 36 6 65 Ices 20 50 1 06 1.5 50 75 5 NS3762 TOS 40 40 5 100 20: | 35 10 1 0.15 08 10 | 18 180 so | 115 10 70 (Lo-Profite) Icex 40 150 1 0.22 1 150 35 500 1 05 12 500 30 120 1A 15 09 141A 30 158 5 NS3763 TOS 60 60 5 100 = 20: | 35 10 1 0.15 os 10 | 18 180 50 | 115 10 70 (Lo-Profile) iceEX 40 150 i 0.22 1 150 35 500 1 0.5 12 s00 20 1A 15 09 14 1A 20 15A 5 Test Conditions: 1. ig = 106 mA, tigy = Iga = 1OmA 3. 1G = 30 MA, tigi = gg =3mA 5. iG ~ 101A, Igy - igg - 6.5 mA 7. ig 106A, Igy - igg = 1A 9. ig SOG iA, igy tga - 50 mA 2. Ig = 30 MA, Igy = Iga = 1.5mA 4. Ie = 100 uA. Veg = 5V. 6. I = 50 mA. Igy = iga=5 mA 8. 1g =30 mA, Igy =3mMA, Igo =1.5mA 10. Ig =1A, Ip} = tpg = 100 mA Rg = 1k, f= 100 Hz N PNP Transistors N LOW LEVEL AMPS Type Case Yeo | Vceo | Veso | 'ceo yi, hee lo. Vee Veetsat) Veetsat) te | Cob fy ic | toff | NF test | Process No. Style (vi (Vv) Wr | tA) @ OF | win max Star = wy (Vi & (Vy) (ma) | (pF) (MHz) @ Gy | ins) | (dB) | Condition | No. Min Min Min Max " ax m Max Min = Max Max Min Max Max | Max 2N2604 10-46 60 45 6 10 45 | 40 120 001 5 0.5 07 09 10 6 30 05 4 1 62 60 05 5 350 10 5 JAN2N2604 TO-46 80 60 6 10 50 | 40 120 0.01 5 05 07 09 10 6 30 300 05 3 1 62 60 05 5 350.10 5