V23990-K429-A40-PM datasheet (R) 1200 V / 75 A MiniSKiiP 3 PIM MiniSKiiP(R) 3 housing Features Solderless interconnection Trench Fieldstop IGBT4 technology Target Applications Schematic Industrial Motor Drives Types V23990-K429-A40-PM Maximum Ratings T j = 25 C, unless otherwise specified Parameter Condition Symbol Value Unit Rectifier Diode Repetitive peak reverse voltage V RRM 1600 V DC forward current I FAV 50 A Surge (non-repetitive) forward current I FSM 450 A 1020 A2s 93 W T jmax 150 C V CE 1200 V IC 75 A 225 A 222 W t p = 10 ms 2 I t-value I t Power dissipation P tot Maximum Junction Temperature T j = 25 C 2 T j = T jmax T s = 80 C Inverter Switch / Brake Switch Collector-emitter breakdown voltage DC collector current Repetitive peak collector current I CRM t p limited by T jmax Power dissipation P tot T j = T jmax Gate-emitter peak voltage V GE Short circuit ratings t SC V CC Maximum Junction Temperature copyright Vincotech T j = 150 C V GE = 15 V T jmax 1 T s = 80 C 20 V 10 800 s V 175 C 28 Jan. 2018 / Revision 7 V23990-K429-A40-PM datasheet Maximum Ratings T j = 25 C, unless otherwise specified Parameter Condition Symbol Value Unit V RRM 1200 V IF 75 A 225 A 154 W T jmax 175 C Storage temperature T stg -40...+125 C Operation temperature under switching condition T op -40...+(T jmax - 25) C Inverter Diode / Brake Diode Repetitive peak reverse voltage DC forward current Repetitive peak forward current I FRM t p limited by T jmax Power dissipation P tot T j = T jmax Maximum Junction Temperature T s = 80 C Thermal Properties Isolation Properties Isolation voltage DC Test voltage* t =2s 5500 V AC voltage t = 1 min V is 2500 V Creepage distance With std lid For more information see handling instructions 6,3 mm Clearance With std lid For more information see handling instructions 6,3 mm Comparative Tracking Index CTI >200 * 100 % tested in production copyright Vincotech 2 28 Jan. 2018 / Revision 7 V23990-K429-A40-PM datasheet Characteristic Values Parameter Conditions Symbol V GE [V] V GS [V] V r [V] V CE [V] V DS [V] Value I C [A] I F [A] I D [A] T j [C] Unit Min Typ Max 0,8 1,03 0,93 0,92 0,79 0,004 0,005 1,35 Rectifier Diode Forward voltage VF Threshold voltage (for power loss calc. only) V to Slope resistance (for power loss calc. only) rt Reverse current Ir 35 1500 R th(j-s) paste = 2,5 W/mK (HPTP) Gate emitter threshold voltage V GE(th) V CE = V GE Collector-emitter saturation voltage V CEsat Thermal resistance junction to sink 25 125 25 125 25 125 25 125 V V 0,1 1,1 mA K/W 0,75 Inverter Switch / Brake Switch 0,003 15 75 Collector-emitter cut-off current incl. Diode I CES 0 1200 Gate-emitter leakage current I GES 20 0 Integrated Gate resistor R gint Turn-on delay time t d(on) Rise time Turn-off delay time Fall time tf Turn-on energy loss E on Turn-off energy loss E off Input capacitance C ies Output capacitance C oss Reverse transfer capacitance C rss Thermal resistance junction to sink R th(j-s) 5 5,8 6,5 1,6 1,97 2,42 2,4 0,1 600 10 tr t d(off) 25 25 150 25 150 25 150 R goff = 4 R gon = 4 15 600 75 25 150 25 150 25 150 25 150 25 150 25 150 V V mA nA 173 189 30 40 284 359 78 120 6,51 10,61 4,25 6,68 ns mWs 4400 f = 1 MHz 25 0 25 290 pF 235 paste = 2,5 W/mK (HPTP) K/W 0,43 Inverter Diode / Brake Diode Diode forward voltage Peak reverse recovery current VF I RRM Reverse recovery time t rr Reverse recovered charge Q rr Peak rate of fall of recovery current Reverse recovered energy Thermal resistance junction to sink 75 R gon = 4 15 600 ( di rf/dt )max E rec R th(j-s) 75 25 150 25 150 25 150 25 150 25 150 25 150 1,5 paste = 2,5 W/mK (HPTP) 2,01 2,05 57,3 68,4 310 602 6,29 14,8 1733 384 2,21 5,51 2,8 V A ns C A/s mWs 0,62 K/W 1000 Thermistor Rated resistance R Deviation of R 100 R/R R 100 25 R 100 = 1670 100 P 100 Power dissipation constant -3 3 1670,3125 % 25 mW/K A-value B (25/50) Tol. % 25 7,635*10-3 1/K B-value B (25/100) Tol. % 25 1,731*10-5 1/K Vincotech PTC Reference copyright Vincotech E 3 28 Jan. 2018 / Revision 7 V23990-K429-A40-PM datasheet Inverter / Brake Characteristics figure 1. Typical output characteristics I C = f(V CE) IGBT figure 2. IGBT Typical output characteristics I C = f(V CE) 200 IC (A) IC (A) 200 150 150 100 100 50 50 0 0 0 At tp = Tj = V GE from 1 2 3 4 V CE (V) 5 0 At tp = Tj = V GE from 250 s 25 C 7 V to 17 V in steps of 1 V figure 3. Typical transfer characteristics I C = f(V GE) IGBT 1 2 3 4 5 250 s 150 C 7 V to 17 V in steps of 1 V figure 4. Typical diode forward current as a function of forward voltage I F = f(V F) FWD 250 IC (A) IF (A) 75 V CE (V) 60 200 45 150 30 100 15 Tj = Tjmax-25C 50 Tj = 25C Tj = Tjmax-25C Tj = 25C 0 0 0 At tp = V CE = 2 250 10 copyright Vincotech 4 6 8 10 V GE (V) 12 0 At tp = s V 4 0,8 250 1,6 2,4 3,2 V F (V) 4 s 28 Jan. 2018 / Revision 7 V23990-K429-A40-PM datasheet Inverter / Brake Characteristics figure 5. IGBT figure 6. IGBT Typical switching energy losses Typical switching energy losses as a function of collector current E = f(I C) as a function of gate resistor E = f(R G) E (mWs) 30 E (mWs) 30 Eon High T 25 25 20 20 Eon Low T Eon High T 15 15 Eoff High T 10 Eon Low T 10 Eoff High T Eoff Low T 5 5 0 Eoff Low T 0 0 30 60 90 120 I C (A) 150 0 With an inductive load at Tj = C 25/150 25/150 V CE = 600 V V GE = 15 V R gon = 4 R goff = 4 4 8 12 16 RG( ) 20 With an inductive load at Tj = C 25/150 25/150 V CE = 600 V V GE = 15 V IC = 75 A figure 7. Typical reverse recovery energy loss as a function of collector current E rec = f(I C) FWD figure 8. Typical reverse recovery energy loss as a function of gate resistor E rec = f(R G) E (mWs) 7,5 E (mWs) 7,5 FWD Erec Tj = Tjmax -25C 6 6 Tj = Tjmax -25C Erec 4,5 4,5 Erec 3 3 Tj = 25C Tj = 25C Erec 1,5 1,5 0 0 0 25 50 75 100 125 I C (A) 150 0 With an inductive load at 25/150 Tj = 25/150 C V CE = 600 V V GE = 15 V R gon = 4 copyright Vincotech 4 8 12 16 RG( ) 20 With an inductive load at 25/150 Tj = 25/150 C V CE = 600 V V GE = 15 V IC = 75 A 5 28 Jan. 2018 / Revision 7 V23990-K429-A40-PM datasheet Inverter / Brake Characteristics figure 9. IGBT figure 10. IGBT Typical switching times as a Typical switching times as a function of collector current t = f(I C) function of gate resistor t = f(R G) t ( s) 1 t ( s) 1 tdoff tdoff tdon tdon 0,1 tf 0,1 tf tr tr 0,01 0,01 0,001 0,001 0 30 60 90 120 I C (A) 150 0 With an inductive load at Tj = 150 C V CE = 600 V V GE = 15 V R gon = 4 R goff = 4 4 8 12 16 RG( ) 20 With an inductive load at Tj = 150 C V CE = 600 V V GE = 15 V IC = 75 A figure 11. Typical reverse recovery time as a function of collector current t rr = f(I C) FWD figure 12. Typical reverse recovery time as a function of IGBT turn on gate resistor t rr = f(R gon) 1 FWD t rr( s) t rr( s) 1 trr 0,8 0,8 Tj = Tjmax -25C Tj = Tjmax -25C trr 0,6 0,6 trr Tj = 25C trr 0,4 0,4 Tj = 25C 0,2 0,2 0 0 0 At Tj = V CE = V GE = R gon = 30 25/150 25/150 600 15 4 copyright Vincotech 60 90 120 I C (A) 0 150 At Tj = VR= IF= V GE = C V V 6 4 25/150 25/150 600 75 15 8 12 16 R g on ( ) 20 C V A V 28 Jan. 2018 / Revision 7 V23990-K429-A40-PM datasheet Inverter / Brake Characteristics figure 13. FWD figure 14. FWD Typical reverse recovery charge as a Typical reverse recovery charge as a function of collector current Q rr = f(I C) function of IGBT turn on gate resistor Q rr = f(R gon) 25 Qrr( C) Qrr( C) 25 Qrr 20 20 Tj = Tjmax -25C Tj = Tjmax -25C 15 10 10 Qrr Tj = 25C Tj = 25C 5 Qrr 5 0 0 0 At Qrr 15 At Tj = V CE = V GE = R gon = 30 60 90 120 I C (A) 150 0 4 8 25/150 25/150 600 C V At Tj = VR= 25/150 25/150 600 C V 15 4 V IF= V GE = 75 15 A V figure 15. Typical reverse recovery current as a function of collector current I RRM = f(I C) FWD 12 16 R g on ( ) figure 16. Typical reverse recovery current as a function of IGBT turn on gate resistor I RRM = f(R gon) 20 FWD 100 IrrM (A) IrrM (A) 100 80 80 Tj = Tjmax -25C Tj = Tjmax - 25C IRRM 60 60 IRRM IRRM Tj = 25C Tj = 25C 40 40 20 20 IRRM 0 0 0 At Tj = V CE = V GE = R gon = 30 25/150 25/150 600 15 4 copyright Vincotech 60 90 120 I C (A) 0 150 At Tj = VR= IF= V GE = C V V 7 4 25/150 25/150 600 75 15 8 12 16 R gon ( ) 20 C V A V 28 Jan. 2018 / Revision 7 V23990-K429-A40-PM datasheet Inverter / Brake Characteristics figure 17. FWD figure 18. FWD Typical rate of fall of forward Typical rate of fall of forward and reverse recovery current as a function of collector current dI 0/dt ,dI rec/dt = f(I C) and reverse recovery current as a function of IGBT turn on gate resistor dI 0/dt ,dI rec/dt = f(R gon) 3000 direc / dt (A/ s) direc / dt (A/ s) 3000 dI0/dt dIrec/dt 2500 dI0/dt dIrec/dt 2500 2000 2000 1500 1500 1000 1000 500 500 0 0 0 At Tj = V CE = V GE = R gon = 30 60 90 I C (A) 120 150 0 4 8 25/150 25/150 600 C V At Tj = VR= 25/150 25/150 600 C V 15 4 V IF= V GE = 75 15 A V figure 19. IGBT transient thermal impedance as a function of pulse width Z th(j-s) = f(t p) IGBT 12 R gon ( ) 16 figure 20. FWD transient thermal impedance as a function of pulse width Z th(j-s) = f(t p) FWD Zth(j-s) (K/W) 101 Zth(j-s) (K/W) 101 20 100 100 D = 0,5 0,2 0,1 0,05 0,02 0,01 0,005 0,000 10-1 D = 0,5 0,2 0,1 0,05 0,02 0,01 0,005 0,000 10-1 10-2 10-2 10-5 At D = R th(j-s) = 10-4 10-3 10-2 102 10-1 100 t p (s) 101 tp/T 0,43 K/W 10-5 10-4 At D = R th(j-s) = tp/T 0,62 10-3 FWD thermal model values R (K/W) 1,59E-02 2,98E-02 7,90E-02 Tau (s) 3,18E+00 2,71E-01 4,84E-02 R (K/W) 2,30E-02 4,31E-02 1,14E-01 Tau (s) 4,61E+00 3,92E-01 7,01E-02 2,29E-01 4,27E-02 2,86E-02 1,97E-03 1,62E-02 3,15E-03 4,83E-04 2,33E-04 3,31E-01 6,18E-02 4,14E-02 2,86E-03 2,34E-02 4,55E-03 6,99E-04 3,38E-04 8 102 10-1 100 t p (s) 101 K/W IGBT thermal model values copyright Vincotech 10-2 28 Jan. 2018 / Revision 7 V23990-K429-A40-PM datasheet Inverter / Brake Characteristics figure 21. Power dissipation as a IGBT figure 22. Collector current as a function of heatsink temperature P tot = f(T s) IGBT function of heatsink temperature I C = f(T s) 100 IC (A) Ptot (W) 450 400 80 350 300 60 250 200 40 150 100 20 50 0 0 0 At Tj = 50 175 100 150 T s ( o C) 200 0 At Tj = V GE = C figure 23. Power dissipation as a FWD 50 175 15 100 150 T s ( o C) C V figure 24. Forward current as a function of heatsink temperature P tot = f(T s) 200 FWD function of heatsink temperature I F = f(T s) 100 IF (A) Ptot (W) 300 250 80 200 60 150 40 100 20 50 0 0 0 At Tj = 50 175 copyright Vincotech 100 150 T s ( o C) 200 0 At Tj = C 9 50 175 100 150 T s ( o C) 200 C 28 Jan. 2018 / Revision 7 V23990-K429-A40-PM datasheet Inverter / Brake Characteristics figure 25. Safe operating area as a function IGBT figure 26. Gate voltage vs Gate charge of collector-emitter voltage I C = f(V CE) V GE = f(Q g) 103 IGBT IC (A) VGE (V) 16 10uS 14 240 V 100uS 102 12 960 V 100mS DC 10mS 1mS 10 101 8 6 100 4 10-1 2 0 100 At D = Ts = V GE = Tj = 102 101 103 0 copyright Vincotech 100 150 200 250 300 350 400 Q g (nC) At IC = single pulse 80 15 T jmax 50 V CE (V) 75 A C V 10 28 Jan. 2018 / Revision 7 V23990-K429-A40-PM datasheet Rectifier Diode figure 1. Diode figure 2. Diode Typical diode forward current as Diode transient thermal impedance a function of forward voltage I F= f(V F) as a function of pulse width Z th(j-s) = f(t p) 100 IF (A) Zth(j-s) (K/W) 100 80 10-1 60 Tj = 25C Tj = Tjmax-25C D = 0,5 0,2 0,1 0,05 0,02 0,01 0,005 0,000 40 10-2 20 0 0 At tp = 0,3 250 0,6 0,9 1,2 V F (V) 10-3 1,5 s figure 3. Diode 10-5 10-4 At D = R th(j-s) = tp/T 0,75 10-2 10-1 102 100 t p (s) 101 K/W figure 4. Power dissipation as a function of heatsink temperature P tot = f(T s) Diode Forward current as a function of heatsink temperature I F = f(T s) 100 IF (A) 210 Ptot (W) 10-3 180 80 150 60 120 90 40 60 20 30 0 0 0 At Tj = 30 150 copyright Vincotech 60 90 120 T s ( o C) 150 0 At Tj = C 11 30 150 60 90 120 T s ( o C) 150 C 28 Jan. 2018 / Revision 7 V23990-K429-A40-PM datasheet Thermistor figure 1. Thermistor Typical PTC characteristic as a function of temperature R T = f(T ) PTC-typical temperature characteristic R () 2000 1800 1600 1400 1200 1000 25 copyright Vincotech 50 75 100 T (C) 125 12 28 Jan. 2018 / Revision 7 V23990-K429-A40-PM datasheet Switching Definitions Inverter General conditions Tj = 150 C = 4 R gon R goff = 4 figure 1. IGBT Turn-off Switching Waveforms & definition of t doff, t Eoff figure 2. IGBT Turn-on Switching Waveforms & definition of t don, t Eon (t E off = integrating time for E off) (t E on = integrating time for E on) 150 200 IC 125 170 VCE tdoff 140 100 VCE 90% VGE 90% VCE 110 75 % IC % 80 tEoff 50 VGE tdon 50 25 VGE IC10% 20 IC 1% VCE 3% VGE10% 0 -10 -25 -0,2 tEon -0,1 0 0,1 0,2 V GE (0%) = V GE (100%) = V C (100%) = I C (100%) = -15 15 600 t doff = t E off = 0,3 0,4 0,5 0,6 0,7 -40 0,8 0,9 time (us) 2,8 2,9 3 3,1 3,2 V V V V GE (0%) = V GE (100%) = V C (100%) = 75 A I C (100%) = 75 A 0,36 0,73 s s t don = t E on = 0,19 0,58 s s figure 3. Turn-off Switching Waveforms & definition of t f IGBT -15 15 600 3,4 3,5 3,6 3,7 time(us) V V V figure 4. Turn-on Switching Waveforms & definition of t r 140 IGBT 200 fitted Ic 120 170 VCE 100 140 IC IC 90% 80 VCE 110 IC 60% %60 IC90% % 80 IC 40% 40 tr 50 20 20 IC10% IC10% tf 0 -20 0,25 3,3 -10 -40 0,3 0,35 0,4 0,45 0,5 0,55 0,6 time (us) 3,1 3,2 3,3 3,4 V C (100%) = I C (100%) = 600 75 V A V C (100%) = I C (100%) = 600 75 V A tf = 0,12 s tr = 0,04 s copyright Vincotech 13 3,5 3,6 time(us) 28 Jan. 2018 / Revision 7 V23990-K429-A40-PM datasheet Switching Definitions Inverter figure 5. Turn-off Switching Waveforms & definition of t Eoff IGBT figure 6. Turn-on Switching Waveforms & definition of t Eon 120 IGBT 180 Pon Eoff Poff 100 150 80 120 Eon 90 60 % % 60 40 30 20 Uce3% Uge10% VGE 90% 0 0 tEon tEoff IC 1% -30 -20 -0,2 -0,05 0,1 P off (100%) = E off (100%) = t E off = 0,25 0,4 time (us) 45,10 6,68 0,73 0,55 0,7 2,9 0,85 kW mJ s 3 P on (100%) = E on (100%) = t E on = figure 7. Turn-off Switching Waveforms & definition of t rr 3,1 3,2 45,10 10,61 0,58 3,3 time(us) 3,4 3,5 3,6 3,7 kW mJ s FWD 120 Id 80 trr 40 % 0 Vd IRRM10% -40 fitted -80 IRRM100% IRRM90% -120 3 3,2 V d (100%) = I d (100%) = I RRM (100%) = t rr = copyright Vincotech 3,4 600 75 -68 0,60 time(us) 3,6 3,8 4 V A A s 14 28 Jan. 2018 / Revision 7 V23990-K429-A40-PM datasheet Switching Definitions Inverter figure 8. Turn-on Switching Waveforms & definition of t Qrr (t Q rr = integrating time for Q rr) FWD figure 9. Turn-on Switching Waveforms & definition of t Erec (t Erec= integrating time for E rec) 140 FWD 120 Id Erec Qrr 100 100 80 tErec tQrr 60 60 % 20 % 40 -20 20 Prec -60 0 -100 -20 3 3,2 I d (100%) = Q rr (100%) = t Q rr = copyright Vincotech 3,4 3,6 75 14,81 1,20 3,8 time(us) 4 4,2 4,4 4,6 3 A C s 3,2 P rec (100%) = E rec (100%) = t E rec = 15 3,4 3,6 45,10 5,51 1,20 3,8 time(us) 4 4,2 4,4 4,6 kW mJ s 28 Jan. 2018 / Revision 7 V23990-K429-A40-PM datasheet Ordering Code and Marking - Outline - Pinout Ordering Code & Marking Version Ordering Code With std lid (6.5mm height) + no thermal grease V23990-K429-A40-/0A/-PM With thin lid (2.8mm height) + no thermal grease V23990-K429-A40-/0B/-PM With std lid (6.5mm height) + thermal grease (0,8 W/mK, P12, silicone-based) V23990-K429-A40-/1A/-PM With thin lid (2.8mm height) + thermal grease (0,8 W/mK, P12, silicone-based) V23990-K429-A40-/1B/-PM With std lid (6.5mm height) + thermal grease (2,5 W/mK, TG20032, silicone-free) V23990-K429-A40-/4A/-PM With thin lid (2.8mm height) + thermal grease (2,5 W/mK, TG20032, silicone-free) V23990-K429-A40-/4B/-PM With std lid (6.5mm height) + thermal grease (2,5 W/mK, HPTP, silicone-based) V23990-K429-A40-/5A/-PM V23990-K429-A40-/5B/-PM With thin lid (2.8mm height) + thermal grease (2,5 W/mK, HPTP, silicone-based) VIN Date code Name&Ver UL Lot Serial VIN WWYY NNNNNNVV UL LLLLL SSSS Type&Ver Lot number Serial Date code TTTTTTTVV LLLLL SSSS WWYY Text Datamatrix Outline PCB pad table PCB pad table Pin X Y Function Pin X Y Function 1 15,83 -25,3 G5 45 -25,9 2,2 +B 2 15,83 -6,4 E5 46 10,82 8,74 B 3 15,83 -3,2 W 47 10,82 11,94 B 4 15,83 0 W 48 -32,82 8,74 B 5 15,83 3,2 W 49 -32,82 11,94 B 6 15,83 6,4 W 50 4,32 22,1 -B 7 Not assembled 51 4,32 25,3 -B 8 Not assembled 52 3,42 -25,3 +rect 3,42 -22,1 +rect 9 15,83 22,1 G6 53 10 15,83 25,3 E6 54 11 8,13 -25,3 -T 55 12 8,13 -22,1 +T 56 3,42 -9,3 +DC 57 3,42 -6,1 +DC 58 -39,32 15,7 GB 59 -39,32 18,9 EB -B 13 14 15 Not assembled 8,13 25,3 -DC Not assembled Not assembled Not assembled 16 41,82 -12,2 E3 60 -39,32 22,1 17 41,82 -8,98 V 61 -39,32 25,3 -B 18 41,82 -5,79 V 62 -40,22 -25,3 +rect 19 0,43 22,1 G4 63 -40,22 -22,1 +rect 20 0,43 25,3 E4 64 21 -1,07 -25,3 G3 Not assembled 65 Not assembled 22 Not assembled 66 -40,22 -9,3 +DC 23 Not assembled 67 -40,22 -6,09 +DC 24 -1,82 -8,98 V 68 -10,18 -25,3 L1 25 -1,82 -5,79 V 69 -10,18 -22,1 L1 26 27 Not assembled 70 Not assembled 71 Not assembled Not assembled 28 -7,27 25,3 -DC 72 -10,18 -9,5 29 -14,97 22,1 G2 73 -10,18 -6,3 L2 30 -14,97 25,3 E2 74 -10,18 6,3 -rect 31 75 -10,18 9,5 -rect 32 23,95 -11,8 U 76 -10,18 22,1 L3 33 23,95 -8,63 U 77 -10,18 25,3 L3 34 23,95 -5,42 E1 78 -53,82 -25,3 L1 35 -19,22 -25,3 G1 79 -53,82 -22,1 L1 36 Not assembled L2 Not assembled 80 Not assembled 37 -19,7 -11,8 U 81 38 -19,7 -8,62 U 82 -53,82 -9,5 L2 83 -53,82 -6,3 L2 39 40 Not assembled 17,74 -1 +B 84 Not assembled Not assembled 41 17,74 2,2 +B 85 -53,82 6,3 -rect 42 -22,67 22,1 -DC 86 -53,82 9,5 -rect 43 -22,67 25,3 -DC 87 -53,82 22,1 L3 44 -25,9 -1 +B 88 -53,82 25,3 L3 Pad positions refers to center point. For more informations on pad design please see package data copyright Vincotech 16 28 Jan. 2018 / Revision 7 V23990-K429-A40-PM datasheet Pinout Identification ID Component Voltage Current Function T1,T2,T3,T4,T5,T6 IGBT 1200 V 75 A Inverter Switch D1,D2,D3,D4,D5,D6 FWD 1200 V 75 A Inverter Diode T7 IGBT 1200 V 75 A Brake Switch D7 FWD 1200 V 75 A Brake Diode D8,D9,D10,D11,D12,D13 Rectifier 1600 V 50 A Rectifier Diode PTC1 PTC copyright Vincotech Comment Thermistor 17 28 Jan. 2018 / Revision 7 V23990-K429-A40-PM datasheet Packaging instruction Standard packaging quantity (SPQ) >SPQ 48 Standard <SPQ Sample Handling instruction Handling instructions for MiniSkiiP (R) 3 packages see vincotech.com website. Package data Package data for MiniSkiiP (R) 3 packages see vincotech.com website. UL recognition and file number This device is certified according to UL 1557 standard, UL file number E192116. For more information see vincotech.com website. Document No.: Date: Modification: Pages V23990-K429-A40-D7-14 28 Jan. 2018 Updated with HPTP all DISCLAIMER The information, specifications, procedures, methods and recommendations herein (together "information") are presented by Vincotech to reader in good faith, are believed to be accurate and reliable, but may well be incomplete and/or not applicable to all conditions or situations that may exist or occur. Vincotech reserves the right to make any changes without further notice to any products to improve reliability, function or design. No representation, guarantee or warranty is made to reader as to the accuracy, reliability or completeness of said information or that the application or use of any of the same will avoid hazards, accidents, losses, damages or injury of any kind to persons or property or that the same will not infringe third parties rights or give desired results. It is reader's sole responsibility to test and determine the suitability of the information and the product for reader's intended use. LIFE SUPPORT POLICY Vincotech products are not authorised for use as critical components in life support devices or systems without the express written approval of Vincotech. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in labelling can be reasonably expected to result in significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. copyright Vincotech 18 28 Jan. 2018 / Revision 7