ST173CPBF Series Vishay High Power Products Inverter Grade Thyristors (Hockey PUK Version), 330 A FEATURES * * * * * * * * * TO-200AB (A-PUK) PRODUCT SUMMARY Metal case with ceramic insulator All diffused design Center amplifying gate Guaranteed high dV/dt International standard case TO-200AB (A-PUK) Guaranteed high dI/dt High surge current capability Low thermal impedance High speed performance RoHS COMPLIANT TYPICAL APPLICATIONS IT(AV) 330 A * * * * Inverters Choppers Induction heating All types of force-commutated converters MAJOR RATINGS AND CHARACTERISTICS PARAMETER TEST CONDITIONS IT(AV) Ths IT(RMS) Ths ITSM I2 t UNITS 330 A 55 C 610 A 25 C 50 Hz 4680 60 Hz 4900 50 Hz 110 60 Hz 100 VDRM/VRRM Range tq VALUES TJ A kA2s 1000 to 1200 V 15 to 30 s - 40 to 125 C ELECTRICAL SPECIFICATIONS VOLTAGE RATINGS TYPE NUMBER VOLTAGE CODE VDRM/VRRM, MAXIMUM REPETITIVE PEAK VOLTAGE V VRSM, MAXIMUM NON-REPETITIVE PEAK VOLTAGE V 10 1000 1100 12 1200 1300 ST173C..C Document Number: 94366 Revision: 29-Apr-08 IDRM/IRRM MAXIMUM AT TJ = TJ MAXIMUM mA 40 For technical questions, contact: ind-modules@vishay.com www.vishay.com 1 ST173CPBF Series Inverter Grade Thyristors (Hockey PUK Version), 330 A Vishay High Power Products CURRENT CARRYING CAPABILITY ITM FREQUENCY ITM 180 el 50 Hz 760 ITM 100 s 180 el 660 1200 1030 5570 4920 400 Hz 730 590 1260 1080 2800 2460 1000 Hz 600 490 1200 1030 1620 1390 2500 Hz 350 270 850 720 800 680 50 50 50 VDRM VDRM VDRM Recovery voltage Vr Voltage before turn-on Vd Rise of on-state current dI/dt 50 Heatsink temperature 40 Equivalent values for RC circuit 55 55 47/0.22 A V - 40 47/0.22 UNITS A/s 40 55 C /F 47/0.22 ON-STATE CONDUCTION PARAMETER SYMBOL Maximum average on-state current at heatsink temperature IT(AV) Maximum RMS on-state current IT(RMS) Maximum peak, one half cycle, non-repetitive surge current ITSM TEST CONDITIONS 180 conduction, half sine wave double side (single side) cooled C 610 4680 t = 10 ms t = 10 ms I2t A 55 (85) t = 10 ms t = 8.3 ms t = 8.3 ms t = 10 ms t = 8.3 ms No voltage reapplied 4900 100 % VRRM reapplied 4120 No voltage reapplied UNITS 330 (120) DC at 25 C heatsink temperature double side cooled t = 8.3 ms Maximum I2t for fusing VALUES A 3940 Sinusoidal half wave, initial TJ = TJ maximum 110 100 77 100 % VRRM reapplied kA2s 71 Maximum I2t for fusing I2t t = 0.1 to 10 ms, no voltage reapplied 1100 Maximum peak on-state voltage VTM ITM = 600 A, TJ = TJ maximum, tp = 10 ms sine wave pulse 2.07 Low level value of threshold voltage VT(TO)1 (16.7 % x x IT(AV) < I < x IT(AV)), TJ = TJ maximum 1.55 High level value of threshold voltage VT(TO)2 (I > x IT(AV)), TJ = TJ maximum 1.61 Low level value of forward slope resistance rt1 (16.7 % x x IT(AV) < I < x IT(AV)), TJ = TJ maximum 0.87 High level value of forward slope resistance rt2 (I > x IT(AV)), TJ = TJ maximum 0.77 Maximum holding current IH TJ = 25 C, IT > 30 A 600 Typical latching current IL TJ = 25 C, VA = 12 V, Ra = 6 , IG = 1 A 1000 kA2s V m mA SWITCHING PARAMETER Maximum non-repetitive rate of rise of turned on current Typical delay time SYMBOL TEST CONDITIONS VALUES UNITS dI/dt TJ = TJ maximum, VDRM = Rated VDRM, ITM = 2 x dI/dt 1000 A/s td TJ = 25 C, VDM = Rated VDRM, ITM = 50 A DC, tp = 1 s Resistive load, gate pulse: 10 V, 5 source tq TJ = TJ maximum, ITM = 300 A, commutating dI/dt = 20 A/s VR = 50 V, tp = 500 s, dV/dt: See table in device code minimum Maximum turn-off time maximum www.vishay.com 2 For technical questions, contact: ind-modules@vishay.com 1.1 15 s 30 Document Number: 94366 Revision: 29-Apr-08 ST173CPBF Series Inverter Grade Thyristors Vishay High Power Products (Hockey PUK Version), 330 A BLOCKING PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS Maximum critical rate of rise of off-state voltage dV/dt TJ = TJ maximum, linear to 80 % VDRM, higher value available on request 500 V/s Maximum peak reverse and off-state leakage current IRRM, IDRM TJ = TJ maximum, rated VDRM/VRRM applied 40 mA SYMBOL TEST CONDITIONS VALUES UNITS TRIGGERING PARAMETER Maximum peak gate power PGM Maximum average gate power PG(AV) Maximum peak positive gate current IGM Maximum peak positive gate voltage + VGM Maximum peak negative gate voltage - VGM Maximum DC gate current required to trigger IGT Maximum DC gate voltage required to trigger VGT Maximum DC gate current not to trigger IGD Maximum DC gate voltage not to trigger VGD 60 TJ = TJ maximum, f = 50 Hz, d% = 50 10 10 TJ = TJ maximum, tp 5 ms 20 5 TJ = 25 C, VA = 12 V, Ra = 6 TJ = TJ maximum, rated VDRM applied W A V 200 mA 3 V 20 mA 0.25 V VALUES UNITS THERMAL AND MECHANICAL SPECIFICATIONS PARAMETER SYMBOL Maximum operating junction temperature range Maximum storage temperature range TEST CONDITIONS TJ - 40 to 125 TStg - 40 to 150 Maximum thermal resistance, junction to heatsink RthJ-hs Maximum thermal resistance, case to heatsink RthC-hs DC operation single side cooled 0.17 DC operation double side cooled 0.08 DC operation single side cooled 0.033 DC operation double side cooled 0.017 Mounting force, 10 % Approximate weight Case style See dimensions - link at the end of datasheet C K/W 4900 (500) N (kg) 50 g TO-200AB (A-PUK) RthJ-hs CONDUCTION CONDUCTION ANGLE SINUSOIDAL CONDUCTION RECTANGULAR CONDUCTION SINGLE SIDE DOUBLE SIDE SINGLE SIDE DOUBLE SIDE 180 0.015 0.016 0.011 0.011 120 0.018 0.019 0.019 0.019 90 0.024 0.024 0.026 0.026 60 0.035 0.035 0.036 0.037 30 0.060 0.060 0.060 0.061 TEST CONDITIONS UNITS TJ = TJ maximum K/W Note * The table above shows the increment of thermal resistance RthJ-hs when devices operate at different conduction angles than DC Document Number: 94366 Revision: 29-Apr-08 For technical questions, contact: ind-modules@vishay.com www.vishay.com 3 ST173CPBF Series Vishay High Power Products Inverter Grade Thyristors (Hockey PUK Version), 330 A 130 ST173C..C Series (Single side cooled) RthJ-hs (DC) = 0.17 K/W 120 110 100 O 90 Conduction angle 80 70 30 60 60 90 50 120 180 100 90 120 80 40 200 160 Conduction period 70 60 50 60 40 240 30 0 DC 120 200 100 90 300 180 400 500 600 Average On-State Current (A) Average On-State Current (A) Fig. 1 - Current Ratings Characteristics Fig. 4 - Current Ratings Characteristics 130 700 110 100 90 O 80 Conduction period 70 60 50 90 40 30 180 60 30 DC Maximum Average On-State Power Loss (W) 1000 ST173C..C Series (Single side cooled) RthJ-hs (DC) = 0.17 K/W 120 120 180 120 90 60 30 900 800 700 600 RMS limit 500 400 O 300 Conduction angle 200 ST173C..C Series TJ = 125 C 100 0 20 0 50 100 200 150 250 300 0 350 100 150 200 250 300 350 400 450 50 Average On-State Current (A) Average On-state Current (A) Fig. 2 - Current Ratings Characteristics Fig. 5 - On-State Power Loss Characteristics 130 1400 ST173C..C Series (Double side cooled) RthJ-hs (DC) = 0.08 K/W 120 110 Maximum Average On-State Power Loss (W) Maximum Allowable Heatsink Temperature (C) O 80 20 0 Maximum Allowable Heatsink Temperature (C) 110 30 40 100 90 O Conduction angle 80 70 30 180 60 60 90 50 120 40 30 DC 180 120 90 60 30 1200 1000 800 RMS limit 600 O Conduction period 400 ST173C..C Series TJ = 125 C 200 0 0 50 100 150 200 250 300 350 Average On-State Current (A) Fig. 3 - Current Ratings Characteristics www.vishay.com 4 ST173C..C Series (Double side cooled) RthJ-hs (DC) = 0.08 K/W 120 Maximum Allowable Heatsink Temperature (C) Maximum Allowable Heatsink Temperature (C) 130 400 0 100 200 300 400 500 600 700 Average On-State Current (A) Fig. 6 - On-State Power Loss Characteristics For technical questions, contact: ind-modules@vishay.com Document Number: 94366 Revision: 29-Apr-08 ST173CPBF Series Inverter Grade Thyristors Vishay High Power Products (Hockey PUK Version), 330 A 1 At any rated load condition and with rated VRRM applied following surge. ST173C..C Series Transient Thermal Impedance ZthJ-hs (K/W) Peak Half Sine Wave On-State Current (A) 4500 Initial TJ = 125 C at 60 Hz 0.0083 s at 50 Hz 0.0100 s 4000 3500 3000 2500 0.1 Steady state value RthJ-hs = 0.17 K/W (Single side cooled) RthJ-hs = 0.08 K/W (Double side cooled) (DC operation) 0.01 ST173C..C Series 0.001 0.001 2000 1 10 100 Number of Equal Amplitude Half Cycle Current Pulses (N) Fig. 7 - Maximum Non-Repetitive Surge Current Single and Double Side Cooled 5000 3500 3000 2500 2000 10 ST173C..C Series TJ = 125 C 200 ITM = 500 A ITM = 300 A ITM = 200 A 150 ITM = 100 A 100 50 ITM = 50 A ST173C..C Series 1500 0 0.01 0.1 0 1 20 40 60 80 100 dI/dt - Rate of Fall of On-State Current (A/s) Pulse Train Duration (s) Fig. 8 - Maximum Non-Repetitive Surge Current Single and Double Side Cooled Fig. 11 - Reverse Recovered Charge Characteristics 10 000 160 ST173C..C Series ITM = 500 A 140 Irr - Maximum Reverse Recovery Current (A) Instantaneous On-State Current (A) 1 Fig. 10 - Thermal Impedance ZthJ-hs Characteristics Qrr - Maximum Reverse Recovery Charge (C) Peak Half Sine Wave On-State Current (A) 4000 0.1 250 Maximum non-repetitive surge current versus pulse train duration. Control of conduction may not be maintained. Initial TJ = 125 C No voltage reapplied Rated VRRM reapplied 4500 0.01 Square Wave Pulse Duration (s) 1000 TJ = 25 C TJ = 125 C ITM = 300 A 120 ITM = 200 A ITM = 100 A 100 ITM = 50 A 80 60 40 ST173C..C Series TJ = 125 C 20 0 100 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 Instantaneous On-State Voltage (V) Fig. 9 - On-State Voltage Drop Characteristics Document Number: 94366 Revision: 29-Apr-08 0 20 40 60 80 100 dI/dt - Rate of Fall of Forward Current (A/s) Fig. 12 - Reverse Recovered Current Characteristics For technical questions, contact: ind-modules@vishay.com www.vishay.com 5 ST173CPBF Series Vishay High Power Products Inverter Grade Thyristors (Hockey PUK Version), 330 A 10 000 Snubber circuit Rs = 47 Cs = 0.22 F VD = 80 % VDRM 500 200 50 Hz 100 1000 400 1500 1000 2500 3000 5000 tp ST173C..C Series Sinusoidal pulse TC = 40 C Peak On-State Current (A) Peak On-State Current (A) 10 000 Snubber circuit Rs = 47 Cs = 0.22 F VD = 80 % VDRM 400 2500 3000 5000 ST173C..C Series Sinusoidal pulse TC = 55 C tp 100 100 500 1500 1000 50 Hz 200 1000 100 10 100 1000 10 000 10 100 Pulse Basewidth (s) 1000 10 000 Pulse Basewidth (s) Fig. 13 - Frequency Characteristics 10 000 Snubber circuit Rs = 47 Cs = 0.22 F VD = 80 % VDRM 500 400 1000 2000 1500 1000 2500 3000 5000 tp 100 10 100 50 Hz 200 100 ST173C..C Series Trapezoidal pulse TC = 40 C dI/dt = 50 A/s 1000 Peak On-State Current (A) Peak On-State Current (A) 10 000 Snubber circuit Rs = 47 Cs = 0.22 F VD = 80 % VDRM 50 Hz 1000 500 400 2000 2500 3000 1000 1500 tp 5000 100 10 000 10 100 Pulse Basewidth (s) 200 100 ST173C..C Series Trapezoidal pulse TC = 55 C dI/dt = 50 A/s 1000 10 000 Pulse Basewidth (s) Fig. 14 - Frequency Characteristics 10 000 Snubber circuit Rs = 47 Cs = 0.22 F VD = 80 % VDRM 1000 1500 3000 500 1000 400 200 100 50 Hz 2500 5000 100 10 000 tp 10 10 100 ST173C..C Series Trapezoidal pulse TC = 40 C dI/dt = 100 A/s 1000 10 000 Peak On-State Current (A) Peak On-State Current (A) 10 000 200 100 50 Hz 500 400 1000 1000 1500 3000 Snubber circuit Rs = 47 Cs = 0.22 F VD = 80 % VDRM 2500 5000 100 10 000 tp 10 10 Pulse Basewidth (s) 100 ST173C..C Series Trapezoidal pulse TC = 55 C dI/dt = 100 A/s 1000 10 000 Pulse Basewidth (s) Fig. 15 - Frequency Characteristics www.vishay.com 6 For technical questions, contact: ind-modules@vishay.com Document Number: 94366 Revision: 29-Apr-08 ST173CPBF Series Inverter Grade Thyristors Vishay High Power Products (Hockey PUK Version), 330 A 100 000 10 000 Peak On-State Current (A) Peak On-State Current (A) 100 000 20 joules per pulse 1000 0.5 1 2 3 5 10 0.3 0.2 0.1 100 ST173C..C Series Sinusoidal pulse tp ST173C..C Series Rectangular pulse dI/dt = 50 A/s 10 000 20 joules per pulse 2 1000 10 3 5 1 0.5 0.3 0.2 100 0.1 tp 10 10 10 100 1000 10 000 10 Pulse Basewidth (s) 100 1000 10 000 Pulse Basewidth (s) Fig. 16 - Maximum On-State Energy Power Loss Characteristics 10 Rectangular gate pulse a) Recommended load line for rated dI/dt: 20 V, 10 ; tr 1 s b) Recommended load line for 30 % rated dI/dt: 10 V, 10 tr 1 s IGD 0.01 tp = 20 ms tp = 10 ms tp = 5 ms tp = 3.3 ms TJ = 40 C VGD 0.1 0.001 (a) TJ = 25 C 1 (1) PGM = 10 W, (2) PGM = 20 W, (3) PGM = 40 W, (4) PGM = 60 W, (b) TJ = 125 C Instantaneous Gate Voltage (V) 100 (1) Device: ST173C..C Series 0.1 (2) (3) (4) Frequency limited by PG(AV) 1 10 100 Instantaneous Gate Current (A) Fig. 17 - Gate Characteristics Document Number: 94366 Revision: 29-Apr-08 For technical questions, contact: ind-modules@vishay.com www.vishay.com 7 ST173CPBF Series Vishay High Power Products Inverter Grade Thyristors (Hockey PUK Version), 330 A ORDERING INFORMATION TABLE Device code ST 17 3 C 12 C H K 1 - P 1 2 3 4 5 6 7 8 9 10 11 1 - Thyristor 2 - Essential part number 3 - 3 = Fast turn-off 4 - C = Ceramic PUK 5 - Voltage code x 100 = VRRM (see Voltage Ratings table) 6 - C = PUK case TO-200AB (A-PUK) 7 - Reapplied dV/dt code (for tq test condition) 8 - tq code 9 - 0 = Eyelet terminals (gate and aux. cathode unsoldered leads) 1 = Fast-on terminals (gate and aux. cathode unsoldered leads) 2 = Eyelet terminals dV/dt - tq combinations available dV/dt (V/s) 15 18 t (s) 20 q 25 30 20 CL CP CK CJ -- 50 -DP DK DJ DH 100 -EP EK EJ EH 200 -FP * FK * FJ FH 400 --HK HJ HH * Standard part number. All other types available only on request. (gate and aux. cathode soldered leads) 3 = Fast-on terminals (gate and aux. cathode soldered leads) 10 - Critical dV/dt: None = 500 V/s (standard value) L = 1000 V/s (special selection) 11 - P = Lead (Pb)-free LINKS TO RELATED DOCUMENTS Dimensions www.vishay.com 8 http://www.vishay.com/doc?95074 For technical questions, contact: ind-modules@vishay.com Document Number: 94366 Revision: 29-Apr-08 Outline Dimensions Vishay Semiconductors TO-200AB (A-PUK) DIMENSIONS in millimeters (inches) Anode to gate Creepage distance: 7.62 (0.30) minimum Strike distance: 7.12 (0.28) minimum 19 (0.75) DIA. MAX. 0.3 (0.01) MIN. 13.7/14.4 (0.54/0.57) 0.3 (0.01) MIN. Gate terminal for 1.47 (0.06) DIA. pin receptacle 19 (0.75) DIA. MAX. 38 (1.50) DIA MAX. 2 holes 3.56 (0.14) x 1.83 (0.07) minimum deep 6.5 (0.26) 4.75 (0.19) 25 5 42 (1.65) MAX. 28 (1.10) Quote between upper and lower pole pieces has to be considered after application of mounting force (see thermal and mechanical specification) Document Number: 95074 Revision: 01-Aug-07 For technical questions, contact: indmodules@vishay.com www.vishay.com 1 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, "Vishay"), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. 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