Document Number: 94366 For technical questions, contact: ind-modules@vishay.com www.vishay.com
Revision: 29-Apr-08 1
Inverter Grade Thyristors
(Hockey PUK Version), 330 A
ST173CPBF Series
Vishay High Power Products
FEATURES
• Metal case with ceramic insulator
• All diffused design
• Center amplifying gate
• Guaranteed high dV/dt
• International standard case TO-200AB (A-PUK)
• Guaranteed high dI/dt
• High surge current capability
• Low thermal impedance
• High speed performance
TYPICAL APPLICATIONS
•Inverters
• Choppers
• Induction heating
• All types of force-commutated converters
ELECTRICAL SPECIFICATIONS
PRODUCT SUMMARY
IT(AV) 330 A
TO-200AB (A-PUK)
RoHS
COMPLIANT
MAJOR RATINGS AND CHARACTERISTICS
PARAMETER TEST CONDITIONS VALUES UNITS
IT(AV)
330 A
Ths 55 °C
IT(RMS)
610 A
Ths 25 °C
ITSM
50 Hz 4680 A
60 Hz 4900
I2t50 Hz 110 kA2s
60 Hz 100
VDRM/VRRM 1000 to 1200 V
tq Range 15 to 30 µs
TJ- 40 to 125 °C
VOLTAGE RATINGS
TYPE NUMBER VOLTAGE
CODE
VDRM/VRRM, MAXIMUM
REPETITIVE PEAK VOLTAGE
V
VRSM, MAXIMUM
NON-REPETITIVE PEAK VOLTAGE
V
IDRM/IRRM MAXIMUM
AT TJ = TJ MAXIMUM
mA
ST173C..C
10 1000 1100
40
12 1200 1300
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2Revision: 29-Apr-08
ST173CPBF Series
Vishay High Power Products Inverter Grade Thyristors
(Hockey PUK Version), 330 A
CURRENT CARRYING CAPABILITY
FREQUENCY UNITS
50 Hz 760 660 1200 1030 5570 4920
A
400 Hz 730 590 1260 1080 2800 2460
1000 Hz 600 490 1200 1030 1620 1390
2500 Hz 350 270 850 720 800 680
Recovery voltage Vr50 50 50 V
Voltage before turn-on VdVDRM VDRM VDRM
Rise of on-state current dI/dt 50 - - A/µs
Heatsink temperature 40 55 40 55 40 55 °C
Equivalent values for RC circuit 47/0.22 47/0.22 47/0.22 Ω/µF
ON-STATE CONDUCTION
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum average on-state current
at heatsink temperature IT(AV)
180° conduction, half sine wave
double side (single side) cooled
330 (120) A
55 (85) °C
Maximum RMS on-state current IT(RMS) DC at 25 °C heatsink temperature double side cooled 610
A
Maximum peak, one half cycle,
non-repetitive surge current ITSM
t = 10 ms No voltage
reapplied
Sinusoidal half wave,
initial TJ = TJ maximum
4680
t = 8.3 ms 4900
t = 10 ms 100 % VRRM
reapplied
3940
t = 8.3 ms 4120
Maximum I2t for fusing I2t
t = 10 ms No voltage
reapplied
110
kA2s
t = 8.3 ms 100
t = 10 ms 100 % VRRM
reapplied
77
t = 8.3 ms 71
Maximum I2√t for fusing I2√t t = 0.1 to 10 ms, no voltage reapplied 1100 kA2√s
Maximum peak on-state voltage VTM
ITM = 600 A, TJ = TJ maximum,
tp = 10 ms sine wave pulse 2.07
V
Low level value of threshold voltage VT(TO)1 (16.7 % x π x IT(AV) < I < π x IT(AV)), TJ = TJ maximum 1.55
High level value of threshold voltage VT(TO)2 (I > π x IT(AV)), TJ = TJ maximum 1.61
Low level value of forward slope resistance rt1 (16.7 % x π x IT(AV) < I < π x IT(AV)), TJ = TJ maximum 0.87 mΩ
High level value of forward slope resistance rt2 (I > π x IT(AV)), TJ = TJ maximum 0.77
Maximum holding current IHTJ = 25 °C, IT > 30 A 600 mA
Typical latching current ILTJ = 25 °C, VA = 12 V, Ra = 6 Ω, IG = 1 A 1000
SWITCHING
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum non-repetitive rate
of rise of turned on current dI/dt TJ = TJ maximum, VDRM = Rated VDRM, ITM = 2 x dI/dt 1000 A/µs
Typical delay time td
TJ = 25 °C, VDM = Rated VDRM, ITM = 50 A DC, tp = 1 µs
Resistive load, gate pulse: 10 V, 5 Ω source 1.1
µs
Maximum turn-off time
minimum
tq
TJ = TJ maximum,
ITM = 300 A, commutating dI/dt = 20 A/µs
VR = 50 V, tp = 500 µs, dV/dt: See table in device code
15
maximum 30
180° el
ITM
180° el
ITM
100 µs
ITM
Document Number: 94366 For technical questions, contact: ind-modules@vishay.com www.vishay.com
Revision: 29-Apr-08 3
ST173CPBF Series
Inverter Grade Thyristors
(Hockey PUK Version), 330 A Vishay High Power Products
Note
• The table above shows the increment of thermal resistance RthJ-hs when devices operate at different conduction angles than DC
BLOCKING
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum critical rate of rise of off-state voltage dV/dt TJ = TJ maximum, linear to 80 % VDRM,
higher value available on request 500 V/µs
Maximum peak reverse and off-state leakage current IRRM,
IDRM
TJ = TJ maximum, rated VDRM/VRRM applied 40 mA
TRIGGERING
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum peak gate power PGM TJ = TJ maximum, f = 50 Hz, d% = 50 60 W
Maximum average gate power PG(AV) 10
Maximum peak positive gate current IGM
TJ = TJ maximum, tp ≤ 5 ms
10 A
Maximum peak positive gate voltage + VGM 20 V
Maximum peak negative gate voltage - VGM 5
Maximum DC gate current required to trigger IGT TJ = 25 °C, VA = 12 V, Ra = 6 Ω200 mA
Maximum DC gate voltage required to trigger VGT 3V
Maximum DC gate current not to trigger IGD TJ = TJ maximum, rated VDRM applied 20 mA
Maximum DC gate voltage not to trigger VGD 0.25 V
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum operating junction temperature range TJ- 40 to 125 °C
Maximum storage temperature range TStg - 40 to 150
Maximum thermal resistance, junction to heatsink RthJ-hs
DC operation single side cooled 0.17
K/W
DC operation double side cooled 0.08
Maximum thermal resistance, case to heatsink RthC-hs
DC operation single side cooled 0.033
DC operation double side cooled 0.017
Mounting force, ± 10 % 4900
(500)
N
(kg)
Approximate weight 50 g
Case style See dimensions - link at the end of datasheet TO-200AB (A-PUK)
ΔRthJ-hs CONDUCTION
CONDUCTION ANGLE SINUSOIDAL CONDUCTION RECTANGULAR CONDUCTION TEST CONDITIONS UNITS
SINGLE SIDE DOUBLE SIDE SINGLE SIDE DOUBLE SIDE
180° 0.015 0.016 0.011 0.011
TJ = TJ maximum K/W
120° 0.018 0.019 0.019 0.019
90° 0.024 0.024 0.026 0.026
60° 0.035 0.035 0.036 0.037
30° 0.060 0.060 0.060 0.061
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4Revision: 29-Apr-08
ST173CPBF Series
Vishay High Power Products Inverter Grade Thyristors
(Hockey PUK Version), 330 A
Fig. 1 - Current Ratings Characteristics
Fig. 2 - Current Ratings Characteristics
Fig. 3 - Current Ratings Characteristics
Fig. 4 - Current Ratings Characteristics
Fig. 5 - On-State Power Loss Characteristics
Fig. 6 - On-State Power Loss Characteristics
0200
Maximum Allowable
Heatsink Temperature (°C)
Average On-State Current (A)
40 80 240120 160
40
50
60
70
80
90
100
110
120
130
ST173C..C Series
(Single side cooled)
RthJ-hs (DC) = 0.17 K/W
Ø
Conduction angle
60°
30°
90°
120° 180°
0250 300 350
Average On-state Current (A)
50 150
100 200
Maximum Allowable
Heatsink Temperature (°C)
20
30
40
50
60
70
80
90
100
110
120
130
ST173C..C Series
(Single side cooled)
RthJ-hs (DC) = 0.17 K/W
Ø
Conduction period
30° 60°
90°
120°
180° DC
0250 300 350 400
Average On-State Current (A)
50 150
100 200
Maximum Allowable
Heatsink Temperature (°C)
30
40
50
60
70
80
90
100
110
120
130
30° 60°
90°
120°
180°
ST173C..C Series
(Double side cooled)
RthJ-hs (DC) = 0.08 K/W
Ø
Conduction angle
Average On-State Current (A)
Maximum Allowable
Heatsink Temperature (°C)
0500 600 700
100 300
200 400
20
30
40
50
60
70
80
90
100
110
120
130
ST173C..C Series
(Double side cooled)
RthJ-hs (DC) = 0.08 K/W
Ø
Conduction period
DC
30°
60°
90°
120°
180°
Average On-State Current (A)
Maximum Average On-State
Power Loss (W)
0
100
200
300
400
500
600
700
800
900
1000
RMS limit
0250 300 350 400 450
50 150
100 200
180°
120°
90°
60°
30°
Ø
Conduction angle
ST173C..C Series
TJ = 125 °C
Average On-State Current (A)
Maximum Average On-State
Power Loss (W)
0
200
400
600
800
1000
1200
1400
0300 400 500 600 700
100 200
DC
180°
120°
90°
60°
30°
RMS limit
ST173C..C Series
TJ = 125 °C
Ø
Conduction period
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Revision: 29-Apr-08 5
ST173CPBF Series
Inverter Grade Thyristors
(Hockey PUK Version), 330 A Vishay High Power Products
Fig. 7 - Maximum Non-Repetitive Surge Current
Single and Double Side Cooled
Fig. 8 - Maximum Non-Repetitive Surge Current
Single and Double Side Cooled
Fig. 9 - On-State Voltage Drop Characteristics
Fig. 10 - Thermal Impedance ZthJ-hs Characteristics
Fig. 11 - Reverse Recovered Charge Characteristics
Fig. 12 - Reverse Recovered Current Characteristics
1 10 100
Number of Equal Amplitude Half Cycle
Current Pulses (N)
Peak Half Sine Wave
On-State Current (A)
2000
2500
3000
3500
4000
4500
Initial TJ = 125 °C
at 60 Hz 0.0083 s
at 50 Hz 0.0100 s
At any rated load condition and with
rated VRRM applied following surge.
ST173C..C Series
0.01 0.1 1
Pulse Train Duration (s)
Peak Half Sine Wave
On-State Current (A)
1500
2000
2500
3000
3500
4000
4500
5000
No voltage reapplied
Rated VRRM reapplied
Maximum non-repetitive surge current
versus pulse train duration. Control of
conduction may not be maintained.
Initial TJ = 125 °C
ST173C..C Series
100
1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5
1000
10 000
Instantaneous On-State Current (A)
Instantaneous On-State Voltage (V)
ST173C..C Series
TJ = 25 °C
TJ = 125 °C
0.01 0.1 1 100.001
1
Square Wave Pulse Duration (s)
Transient Thermal
Impedance Z
thJ-hs
(K/W)
0.001
0.01
0.1
ST173C..C Series
Steady state value
RthJ-hs = 0.17 K/W
(Single side cooled)
RthJ-hs = 0.08 K/W
(Double side cooled)
(DC operation)
200 40 60 80 100
dI/dt - Rate of Fall of On-State Current (A/µs)
Q
rr
- Maximum Reverse
Recovery Charge (µC)
0
50
100
150
200
250
ST173C..C Series
TJ = 125 °C
ITM = 500 A
ITM = 300 A
ITM = 200 A
ITM = 100 A
ITM = 50 A
20
0
200 40 60 80 100
40
60
80
100
120
140
160
dI/dt - Rate of Fall of Forward Current (A/µs)
I
rr
- Maximum Reverse
Recovery Current (A)
ST173C..C Series
TJ = 125 °C
ITM = 500 A
ITM = 300 A
ITM = 200 A
ITM = 100 A
ITM = 50 A
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6Revision: 29-Apr-08
ST173CPBF Series
Vishay High Power Products Inverter Grade Thyristors
(Hockey PUK Version), 330 A
Fig. 13 - Frequency Characteristics
Fig. 14 - Frequency Characteristics
Fig. 15 - Frequency Characteristics
100
10 100 1000 10 000
1000
10 000
Pulse Basewidth (µs)
Peak On-State Current (A)
Snubber circuit
Rs = 47 Ω
Cs = 0.22 µF
VD = 80 % VDRM
t
p
ST173C..C Series
Sinusoidal pulse
TC = 40 °C
50 Hz
100
200
500
400
1000
1500
2500
3000
5000
100
10 100 1000 10 000
1000
10 000
Pulse Basewidth (µs)
Peak On-State Current (A)
t
p
ST173C..C Series
Sinusoidal pulse
TC = 55 °C
50 Hz
100
500 400
1000
1500
2500
3000
5000
Snubber circuit
Rs = 47 Ω
Cs = 0.22 µF
VD = 80 % VDRM
200
10 100 1000 10 000
100
1000
10 000
Pulse Basewidth (µs)
Peak On-State Current (A)
Snubber circuit
Rs = 47 Ω
Cs = 0.22 µF
VD = 80 % VDRM
ST173C..C Series
Trapezoidal pulse
TC = 40 °C
dI/dt = 50 A/µs
tp
5000
2500
1500
1000
400 200 100
50 Hz
3000
500
2000
10 100 1000 10 000
100
1000
10 000
Pulse Basewidth (µs)
Peak On-State Current (A)
Snubber circuit
Rs = 47 Ω
Cs = 0.22 µF
VD = 80 % VDRM
ST173C..C Series
Trapezoidal pulse
TC = 55 °C
dI/dt = 50 A/µs
tp
5000
2500
1500
1000
400 200 100
50 Hz
3000
500
2000
10 100 1000 10 000
100
1000
10 000
Pulse Basewidth (µs)
Peak On-State Current (A)
ST173C..C Series
Trapezoidal pulse
TC = 40 °C
dI/dt = 100 A/µs
tp
50 Hz
100
200
400
500
1000
1500
2500
3000
5000
10 000
10
Snubber circuit
Rs = 47 Ω
Cs = 0.22 µF
VD = 80 % VDRM
10 100 1000 10 000
100
1000
10 000
Pulse Basewidth (µs)
Peak On-State Current (A)
Snubber circuit
Rs = 47 Ω
Cs = 0.22 µF
VD = 80 % VDRM
ST173C..C Series
Trapezoidal pulse
TC = 55 °C
dI/dt = 100 A/µs
tp
50 Hz
100
200
400
500
1000
1500
2500
3000
5000
10 000
10
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Revision: 29-Apr-08 7
ST173CPBF Series
Inverter Grade Thyristors
(Hockey PUK Version), 330 A Vishay High Power Products
Fig. 16 - Maximum On-State Energy Power Loss Characteristics
Fig. 17 - Gate Characteristics
Pulse Basewidth (µs)
Peak On-State Current (A)
10 100 1000 10 000
10
100
1000
10 000
tp
ST173C..C Series
Sinusoidal pulse
100 000
0.1
0.2
0.5
23
1
510
20 joules per pulse
0.3
Pulse Basewidth (µs)
Peak On-State Current (A)
10 100 1000 10 000
10
100
1000
10 000
100 000
0.1
0.2
0.5
23
1
510
20 joules per pulse
tp
ST173C..C Series
Rectangular pulse
dI/dt = 50 A/µs
0.3
0.1
1
10
100
0.001
Instantaneous Gate Current (A)
Instantaneous Gate Voltage (V)
0.01 0.1 1 10 100
(b)
VGD
IGD
(1) (2) (3)
Device: ST173C..C Series
(4)
Frequency limited by PG(AV)
(1) PGM = 10 W, tp = 20 ms
(2) PGM = 20 W, tp = 10 ms
(3) PGM = 40 W, tp = 5 ms
(4) PGM = 60 W, tp = 3.3 ms
Rectangular gate pulse
a) Recommended load line for
rated dI/dt: 20 V, 10 Ω; tr ≤ 1 µs
b) Recommended load line for
≤ 30 % rated dI/dt: 10 V, 10 Ω
t
r ≤ 1 µs
(a)
TJ = 40 °C
TJ = 25 °C
TJ = 125 °C
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8Revision: 29-Apr-08
ST173CPBF Series
Vishay High Power Products Inverter Grade Thyristors
(Hockey PUK Version), 330 A
ORDERING INFORMATION TABLE
3 = Fast-on terminals
(gate and aux. cathode soldered leads)
1- Thyristor
2- Essential part number
3- 3 = Fast turn-off
4- C = Ceramic PUK
5- Voltage code x 100 = VRRM (see Voltage Ratings table)
10
6- C = PUK case TO-200AB (A-PUK)
7- Reapplied dV/dt code (for tq test condition)
8-t
q code
9- 0 = Eyelet terminals
(gate and aux. cathode unsoldered leads)
1 = Fast-on terminals
(gate and aux. cathode unsoldered leads)
2 = Eyelet terminals
(gate and aux. cathode soldered leads)
11
- Critical dV/dt:
None = 500 V/µs (standard value)
L = 1000 V/µs (special selection)
- P = Lead (Pb)-free
* Standard part number.
All other types available only on request.
t
q
(µs)
dV/dt - tq combinations available
dV/dt (V/µs) 20 50 100 200 400
15 CL -- -- -- --
18 CP DP EP FP * --
20 CK DK EK FK * HK
25 CJ DJ EJ FJ HJ
30 -- DH EH FH HH
Device code
51 324
6 7 8 9 10 11
ST 17 3 C 12 C H K 1 - P
LINKS TO RELATED DOCUMENTS
Dimensions http://www.vishay.com/doc?95074
Document Number: 95074 For technical questions, contact: indmodules@vishay.com www.vishay.com
Revision: 01-Aug-07 1
TO-200AB (A-PUK)
Outline Dimensions
Vishay Semiconductors
DIMENSIONS in millimeters (inches)
4.75 (0.19)
28 (1.10)
6.5 (0.26)
19 (0.75)
DIA. MAX. 0.3 (0.01) MIN.
0.3 (0.01) MIN.
13.7/14.4
(0.54/0.57)
25° ± 5°
Gate terminal for
1.47 (0.06) DIA.
pin receptacle
19 (0.75)
DIA. MAX.
38 (1.50) DIA MAX.
2 holes 3.56 (0.14) x 1.83 (0.07) minimum deep
42 (1.65) MAX.
Anode to gate
Creepage distance: 7.62 (0.30) minimum
Strike distance: 7.12 (0.28) minimum
Quote between upper and lower pole pieces has to be considered after
application of mounting force (see thermal and mechanical specification)
Legal Disclaimer Notice
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Revision: 02-Oct-12 1Document Number: 91000
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“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
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operating parameters, including typical parameters, must be validated for each customer application by the customer’s
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Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the
definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council
of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment
(EEE) - recast, unless otherwise specified as non-compliant.
Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that
all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU.
Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as Halogen-Free follow Halogen-Free
requirements as per JEDEC JS709A standards. Please note that some Vishay documentation may still make reference
to the IEC 61249-2-21 definition. We confirm that all the products identified as being compliant to IEC 61249-2-21
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