Order this document by TIP120/D SEMICONDUCTOR TECHNICAL DATA ! "# !$ ! . . . designed for general-purpose amplifier and low-speed switching applications. * High DC Current Gain -- hFE = 2500 (Typ) @ IC = 4.0 Adc * Collector-Emitter Sustaining Voltage -- @ 100 mAdc VCEO(sus) = 60 Vdc (Min) -- TIP120, TIP125 VCEO(sus) = 80 Vdc (Min) -- TIP121, TIP126 VCEO(sus) = 100 Vdc (Min) -- TIP122, TIP127 * Low Collector-Emitter Saturation Voltage -- VCE(sat) = 2.0 Vdc (Max) @ IC = 3.0 Adc VCE(sat) = 4.0 Vdc (Max) @ IC = 5.0 Adc * Monolithic Construction with Built-In Base-Emitter Shunt Resistors * TO-220AB Compact Package IIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIII IIII III IIII IIII III IIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIII IIII III IIII IIII III IIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIII IIIIIIIII IIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIII IIIII IIIIII III IIIIIIIIIIIIIII IIIIIIIII IIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIII IIIII IIIIII III IIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIII IIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIII *MAXIMUM RATINGS Rating Symbol Collector-Emitter Voltage VCEO VCB Collector-Base Voltage Emitter-Base Voltage Collector Current -- Continuous Peak Base Current Total Power Dissipation @ TC = 25_C Derate above 25_C Total Power Dissipation @ TA = 25_C Derate above 25_C Unclamped Inductive Load Energy (1) Operating and Storage Junction, Temperature Range TIP120, TIP125 TIP121, TIP126 TIP122, TIP127 Unit 60 80 100 Vdc 60 80 100 Vdc VEB IC 5.0 Vdc 5.0 8.0 Adc IB PD 120 mAdc 65 0.52 Watts W/_C 2.0 0.016 Watts W/_C E 50 mJ TJ, Tstg - 65 to + 150 _C PD *Motorola Preferred Device DARLINGTON 5 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 60 - 80 - 100 VOLTS 65 WATTS THERMAL CHARACTERISTICS Characteristic Symbol RJC Thermal Resistance, Junction to Ambient RJA (1) IC = 1 A, L = 100 mH, P.R.F. = 10 Hz, VCC = 20 V, RBE = 100 . Thermal Resistance, Junction to Case Max Unit 1.92 _C/W 62.5 _C/W CASE 221A-06 TO-220AB PD, POWER DISSIPATION (WATTS) TA TC 4.0 80 3.0 60 TC 2.0 40 TA 1.0 20 0 0 0 20 40 60 80 100 T, TEMPERATURE (C) 120 140 160 Figure 1. Power Derating Preferred devices are Motorola recommended choices for future use and best overall value. REV 2 Motorola, Inc. 1995 Motorola Bipolar Power Transistor Device Data 1 IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII IIII IIII IIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII IIII IIII IIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII IIII IIII IIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII IIII IIII IIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIII v v IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted) Characteristic Symbol Min Max 60 80 100 -- -- -- -- -- -- 0.5 0.5 0.5 -- -- -- 0.2 0.2 0.2 -- 2.0 1000 1000 -- -- -- -- 2.0 4.0 Unit OFF CHARACTERISTICS Collector-Emitter Sustaining Voltage (1) (IC = 100 mAdc, IB = 0) VCEO(sus) TIP120, TIP125 TIP121, TIP126 TIP122, TIP127 Collector Cutoff Current (VCE = 30 Vdc, IB = 0) (VCE = 40 Vdc, IB = 0) (VCE = 50 Vdc, IB = 0) TIP120, TIP125 TIP121, TIP126 TIP122, TIP127 Collector Cutoff Current (VCB = 60 Vdc, IE = 0) (VCB = 80 Vdc, IE = 0) (VCB = 100 Vdc, IE = 0) TIP120, TIP125 TIP121, TIP126 TIP122, TIP127 Vdc ICEO mAdc ICBO Emitter Cutoff Current (VBE = 5.0 Vdc, IC = 0) IEBO mAdc mAdc ON CHARACTERISTICS (1) DC Current Gain (IC = 0.5 Adc, VCE = 3.0 Vdc) (IC = 3.0 Adc, VCE = 3.0 Vdc) hFE -- Collector-Emitter Saturation Voltage (IC = 3.0 Adc, IB = 12 mAdc) (IC = 5.0 Adc, IB = 20 mAdc) VCE(sat) Vdc Base-Emitter On Voltage (IC = 3.0 Adc, VCE = 3.0 Vdc) VBE(on) -- 2.5 Vdc hfe 4.0 -- -- -- -- 300 200 DYNAMIC CHARACTERISTICS Small-Signal Current Gain (IC = 3.0 Adc, VCE = 4.0 Vdc, f = 1.0 MHz) Output Capacitance (VCB = 10 Vdc, IE = 0, f = 0.1 MHz (1) Pulse Test: Pulse Width Cob TIP125, TIP126, TIP127 TIP120, TIP121, TIP122 300 s, Duty Cycle pF 2%. 5.0 V CC RB & RC VARIED TO OBTAIN DESIRED CURRENT LEVELS - 30 V D1 MUST BE FAST RECOVERY TYPE, eg: 1N5825 USED ABOVE IB 100 mA RC SCOPE MSD6100 USED BELOW IB 100 mA 3.0 2.0 RB 51 0 V1 approx -12 V D1 8.0 k 120 + 4.0 V 25 s tr, tf 10 ns DUTY CYCLE = 1.0% for td and tr, D1 is disconnected and V2 = 0 For NPN test circuit reverse all polarities. Figure 2. Switching Times Test Circuit 2 t, TIME ( s) TUT V2 approx + 8.0 V PNP NPN ts tf 1.0 0.7 0.5 0.3 0.2 0.1 0.07 0.05 0.1 VCC = 30 V IC/IB = 250 IB1 = IB2 TJ = 25C 0.2 tr td @ VBE(off) = 0 0.3 0.5 0.7 1.0 2.0 3.0 IC, COLLECTOR CURRENT (AMP) 5.0 7.0 10 Figure 3. Switching Times Motorola Bipolar Power Transistor Device Data r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED) 1.0 0.7 0.5 D = 0.5 0.3 0.2 0.2 0.1 ZJC(t) = r(t) RJC RJC = 1.92C/W MAX D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 TJ(pk) - TC = P(pk) ZJC(t) 0.1 0.05 0.07 0.05 0.02 0.03 0.02 P(pk) 0.01 t1 t2 DUTY CYCLE, D = t1/t2 SINGLE PULSE 0.01 0.01 0.05 0.02 0.1 0.2 0.5 1.0 2.0 5.0 t, TIME (ms) 10 20 50 100 200 500 1.0 k Figure 4. Thermal Response IC, COLLECTOR CURRENT (AMP) 20 100 s 10 500 s 5.0 dc TJ = 150C BONDING WIRE LIMITED THERMALLY LIMITED 1 ms @ TC = 25C (SINGLE PULSE) 5 ms SECOND BREAKDOWN LIMITED CURVES APPLY BELOW RATED VCEO TIP120, TIP125 TIP121, TIP126 TIP122, TIP127 2.0 1.0 0.5 0.2 0.1 0.05 0.02 1.0 2.0 3.0 5.0 7.0 10 20 30 50 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) 70 100 There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC - VCE limits of the transistor that must be observed for reliable operation, i.e., the transistor must not be subjected to greater dissipation than the curves indicate. The data of Figure 5 is based on T J(pk) = 150_C; TC is variable depending on conditions. Second breakdown pulse limits are valid for duty cycles to 10% provided T J(pk) < 150_C. T J(pk) may be calculated from the data in Figure 4. At high case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown Figure 5. Active-Region Safe Operating Area 300 TJ = 25C 5000 3000 2000 200 C, CAPACITANCE (pF) h fe , SMALL-SIGNAL CURRENT GAIN 10,000 1000 500 300 200 TC = 25C VCE = 4.0 Vdc IC = 3.0 Adc 100 50 30 20 10 1.0 Cob 100 70 Cib 50 PNP NPN PNP NPN 2.0 5.0 10 20 50 100 f, FREQUENCY (kHz) 200 Figure 6. Small-Signal Current Gain Motorola Bipolar Power Transistor Device Data 500 1000 30 0.1 0.2 0.5 1.0 2.0 5.0 10 20 VR, REVERSE VOLTAGE (VOLTS) 50 100 Figure 7. Capacitance 3 NPN TIP120, TIP121, TIP122 PNP TIP125, TIP126, TIP127 20,000 20,000 VCE = 4.0 V VCE = 4.0 V 5000 10,000 7000 5000 hFE , DC CURRENT GAIN hFE , DC CURRENT GAIN 10,000 TJ = 150C 3000 2000 25C 1000 - 55C 500 300 200 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 IC, COLLECTOR CURRENT (AMP) TJ = 150C 3000 25C 2000 1000 700 500 - 55C 300 200 0.1 5.0 7.0 10 0.2 0.3 0.5 0.7 1.0 2.0 3.0 IC, COLLECTOR CURRENT (AMP) 5.0 7.0 10 VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS) VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS) Figure 8. DC Current Gain 3.0 TJ = 25C 2.6 IC = 2.0 A 4.0 A 6.0 A 2.2 1.8 1.4 1.0 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 IB, BASE CURRENT (mA) 20 30 3.0 TJ = 25C IC = 2.0 A 2.6 4.0 A 6.0 A 2.2 1.8 1.4 1.0 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 IB, BASE CURRENT (mA) 20 30 Figure 9. Collector Saturation Region 3.0 3.0 TJ = 25C TJ = 25C 2.5 V, VOLTAGE (VOLTS) V, VOLTAGE (VOLTS) 2.5 2.0 1.5 VBE(sat) @ IC/IB = 250 VBE @ VCE = 4.0 V 1.0 2.0 1.5 VBE @ VCE = 4.0 V 1.0 VBE(sat) @ IC/IB = 250 VCE(sat) @ IC/IB = 250 0.5 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 VCE(sat) @ IC/IB = 250 0.5 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 IC, COLLECTOR CURRENT (AMP) IC, COLLECTOR CURRENT (AMP) Figure 10. "On" Voltages 4 Motorola Bipolar Power Transistor Device Data PACKAGE DIMENSIONS -T- B SEATING PLANE C F T S 4 DIM A B C D F G H J K L N Q R S T U V Z A Q 1 2 3 U H K Z L R V NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION Z DEFINES A ZONE WHERE ALL BODY AND LEAD IRREGULARITIES ARE ALLOWED. J G D N INCHES MIN MAX 0.570 0.620 0.380 0.405 0.160 0.190 0.025 0.035 0.142 0.147 0.095 0.105 0.110 0.155 0.018 0.025 0.500 0.562 0.045 0.060 0.190 0.210 0.100 0.120 0.080 0.110 0.045 0.055 0.235 0.255 0.000 0.050 0.045 --- --- 0.080 STYLE 1: PIN 1. 2. 3. 4. MILLIMETERS MIN MAX 14.48 15.75 9.66 10.28 4.07 4.82 0.64 0.88 3.61 3.73 2.42 2.66 2.80 3.93 0.46 0.64 12.70 14.27 1.15 1.52 4.83 5.33 2.54 3.04 2.04 2.79 1.15 1.39 5.97 6.47 0.00 1.27 1.15 --- --- 2.04 BASE COLLECTOR EMITTER COLLECTOR CASE 221A-06 TO-220AB ISSUE Y Motorola Bipolar Power Transistor Device Data 5 Motorola reserves the right to make changes without further notice to any products herein. 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