DMN2015UFDE 20V N-CHANNEL ENHANCEMENT MODE MOSFET ADVANCE INFORMATION Product Summary BVDSS Features RDS(ON) MAX Package 11.6m @ VGS = 4.5V U-DFN2020-6 (Type E) 20V 15m @ VGS = 2.5V ID MAX TA = +25C 10.5A 9.4A Description This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. 0.6mm Profile - Ideal for Low Profile Applications PCB Footprint of 4mm2 Low Gate Threshold Voltage Low On-Resistance Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. "Green" Device (Note 3) For automotive applications requiring specific change control (i.e. parts qualified to AEC-Q100/101/200, PPAP capable, and manufactured in IATF 16949 certified facilities), please contact us or your local Diodes representative. https://www.diodes.com/quality/product-definitions/ Applications Mechanical Data General Purpose Interfacing Switch Power Management Functions Case: U-DFN2020-6 Case Material: Molded Plastic, "Green" Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminals: Finish - NiPdAu over Copper Leadframe. Solderable per MIL-STD-202, Method 208 e4 Weight: 0.0065 grams (Approximate) Drain U-DFN2020-6 (Type E) Pin1 Gate Source Bottom View Pin Out Bottom View Equivalent Circuit Ordering Information (Note 4) Part Number DMN2015UFDE-7 DMN2015UFDE-13 Notes: Marking N4 N4 Reel Size (inches) 7 13 Quantity per Reel 3,000 10,000 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant. 2. See https://www.diodes.com/quality/lead-free/ for more information about Diodes Incorporated's definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green" products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. For packaging details, go to our website at https://www.diodes.com/design/support/packaging/diodes-packaging/. DMN2015UFDE Datasheet number: DS35560 Rev. 10 - 2 1 of 8 www.diodes.com February 2020 (c) Diodes Incorporated DMN2015UFDE Marking Information YM N4 Date Code Key Year Code Month Code N4 = Product Type Marking Code YM = Date Code Marking Y = Year (ex: H = 2020) M = Month (ex: 9 = September) 2011 Y ... ... 2020 H 2021 I 2022 J 2023 K 2024 L 2025 M 2026 N 2027 O 2028 P 2029 R Jan 1 Feb 2 Mar 3 Apr 4 May 5 Jun 6 Jul 7 Aug Sep Oct Nov Dec 8 9 O N D Site 2 N4 Date Code Key Year Code 2011 1 ... ... Week Code Internal Code Code 2020 0 2021 1 N4 = Product Type Marking Code YWX = Date Code Marking Y = Year (ex: 0 = 2020) W = Week (ex: a = Week 27; z Represents Week 52 and 53) X = Internal Code (ex: U = Monday) YWX ADVANCE INFORMATION Site 1 2022 2 1-26 A-Z Sun T DMN2015UFDE Datasheet number: DS35560 Rev. 10 - 2 2023 3 2024 4 2025 5 2026 6 2027 7 27-52 a-z Mon U Tue V Wed W 2 of 8 www.diodes.com 2028 8 2029 9 53 z Thu X Fri Y Sat Z February 2020 (c) Diodes Incorporated DMN2015UFDE Maximum Ratings (@TA = +25C, unless otherwise specified.) ADVANCE INFORMATION Characteristic Symbol VDSS VGSS Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (Note 6) VGS = 4.5V Steady State TA = +25C TA = +70C TA = +25C TA = +70C TA = +25C TA = +70C TA = +25C TA = +70C t<10s Continuous Drain Current (Note 6) VGS = 2.5V Steady State t<10s Value 20 12 10.5 8.5 ID A ID 12.5 10.0 A ID 9.4 7.5 A 11.2 8.8 80 2.5 ID Pulsed Drain Current (10s Pulse, Duty Cycle = 1%) Maximum Body Diode Continuous Current Unit V V IDM IS A A A Thermal Characteristics Characteristic Symbol TA = +25C TA = +70C Steady State t<10s TA = +25C TA = +70C Steady State t<10s Total Power Dissipation (Note 5) Thermal Resistance, Junction to Ambient (Note 5) Total Power Dissipation (Note 6) Thermal Resistance, Junction to Ambient (Note 6) Thermal Resistance, Junction to Case (Note 6) Operating and Storage Temperature Range Value 0.66 0.42 189 132 2.03 1.31 61 43 9.3 -55 to +150 PD RJA PD RJA RJC TJ, TSTG Unit W C/W W C/W C Electrical Characteristics (@TA = +25C, unless otherwise specified.) Characteristic OFF CHARACTERISTICS (Note 7) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current TJ = +25C Gate-Source Leakage ON CHARACTERISTICS (Note 7) Gate Threshold Voltage Symbol Min Typ Max Unit BVDSS IDSS IGSS 20 -- -- -- -- -- -- 1 100 V A nA VGS = 0V, ID = 250A VDS = 16V, VGS = 0V VGS = 12V, VDS = 0V VGS(TH) 0.5 RDS(ON) -- |Yfs| VSD -- -- 1.1 11.6 15 30 50 -- 1.2 V Static Drain-Source On-Resistance -- 9.3 11.4 17 24 11.3 -- VDS = VGS, ID = 250A VGS = 4.5V, ID = 8.5A VGS = 2.5V, ID = 8.5A VGS = 1.8V, ID = 5A VGS = 1.5V, ID = 3A VDS = 10V, ID = 8.5A VGS = 0V, IS = 8.5A Ciss Coss Crss Rg Qg Qg Qgs Qgd tD(on) tr tD(off) tf Trr Qrr -- -- -- -- -- -- -- -- -- -- -- -- -- -- 1779 175 154 0.94 19.7 45.6 2.9 3.8 7.4 16.8 43.6 10.9 8.6 3.7 -- -- -- -- -- -- -- -- -- -- -- -- -- -- Forward Transfer Admittance Diode Forward Voltage DYNAMIC CHARACTERISTICS (Note 8) Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance Total Gate Charge (VGS = 4.5V) Total Gate Charge (VGS = 10V) Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Reverse Recovery Time Reverse Recovery Charge Notes: m s V pF pF pF nC nC nC nC ns ns ns ns ns nC Test Condition VDS = 10V, VGS = 0V, f = 1.0MHz VDS = 0V, VGS = 0V, f = 1MHz VDS = 10V, ID = 8.5A VDS = 10V, ID = 8.5A VGS = 4.5V, RG = 1.8 IF = 8.5A, di/dt = 210A/s 5. Device mounted on FR-4 PC board, with minimum recommended pad layout, single sided. 6. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal bias to bottom layer 1inch square copper plate. 7. Short duration pulse test used to minimize self-heating effect. 8. Guaranteed by design. Not subject to production testing. DMN2015UFDE Datasheet number: DS35560 Rev. 10 - 2 3 of 8 www.diodes.com February 2020 (c) Diodes Incorporated DMN2015UFDE 30 20 VDS = 5.0V ID, DRAIN CURRENT (A) ID, DRAIN CURRENT (A) 16 20 15 10 12 8 = 150 TAT=A 150 C = 125 TAT=A125 C 4 5 85C TTAA==85 T 25C TAA == 25 0 1 2 V DS, DRAIN-SOURCE VOLTAGE (V) Fig.1 Typical Output Characteristic 0.04 0.03 VGS = 1.5V 0.02 VGS = 1.8V VGS = 2.5V 0.01 VGS = 4.5V 0 0 4 8 12 16 ID, DRAIN-SOURCE CURRENT (A) Fig. 3 Typical On-Resistance vs. Drain Current and Gate Voltage 0 RDS(ON), DRAIN-SOURCE ON-RESISTANCE () 0.05 TTAA = = -55 -55C 0 3 0.5 1.0 1.5 VGS, GATE-SOURCE VOLTAGE (V) Fig. 2 Typical Transfer Characteristics 0.045 0.040 0.035 0.030 0.025 0.020 0.015 ID = 8.5A 0.010 ID = 4.5A 0.005 20 0 0 2 4 6 8 10 12 VGS, GATE-SOURCE VOLTAGE (V) Fig. 4 Typical Drain-Source On-Resistance vs. Gate-Source Voltage 1.6 0.020 VGS = 2.5V ID = 5A VGS = 4.5V 0.015 TAT=A150 C = 150 125 TAT= 125 C A= = 85 TAT=A 85 C 0.010 25 TAT=A = 25 C -55 TTA A= =-55 C 0.005 0 2.0 0.050 RDS(ON), DRAIN-SOURCE ON-RESISTANCE (NORMALIZED) RDS(ON), DRAIN-SOURCE ON-RESISTANCE () 0 RDS(ON), DRAIN-SOURCE ON-RESISTANCE () ADVANCE INFORMATION 25 0 4 8 12 16 ID, DRAIN CURRENT (A) Fig. 5 Typical On-Resistance vs. Drain Current and Temperature DMN2015UFDE Datasheet number: DS35560 Rev. 10 - 2 20 4 of 8 www.diodes.com 1.4 VGS = 4.5V ID = 10A 1.2 1.0 0.8 0.6 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) Fig. 6 On-Resistance Variation with Temperature February 2020 (c) Diodes Incorporated 1.6 VGS(th), GATE THRESHOLD VOLTAGE (V) RDS(ON), DRAIN-SOURCE ON-RESISTANCE () 0.020 0.015 VGS = 4.5 V ID = 5A 0.010 VGS = 10V ID = 10A 0.005 1.4 1.2 1.0 0.8 ID = 1mA 0.6 = 250 IIDD=250A 0.4 0.2 0 -50 0 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) Fig. 7 On-Resistance Variation with Temperature -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) Temperature Fig. 8 Gate Threshold Variation vs. Junction Ambient Temperature CT, JUNCTION CAPACITANCE (pF) IS, SOURCE CURRENT (A) 20 16 12 = 25 TA T=A25 C 8 4 Ciss 1,000 Coss Crss f = 1MHz 0 0 10 0.2 0.4 0.6 0.8 1.0 VSD, SOURCE-DRAIN VOLTAGE (V) Fig. 9 Diode Forward Voltage vs. Current 0 5 10 15 VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 10 Typical Junction Capacitance 20 100 10 R DS(on) Limited PW = 100s 100 8 ID, DRAIN CURRENT (A) (V) VOLTAGE THRESHOLD VV , GATE SOURCE VOLTAGE (V) GSGATE GS ADVANCE INFORMATION DMN2015UFDE VDS = 10V ID = 8.5A 6 4 2 0 10 DC 1 PW = 10s PW = 1s 0.1 TTJ(MAX) = 150C J(max) = 150 PW = 100ms PW = 10ms PW = 1ms T C TAA==25 25 VGS = 12V Single Pulse DUT on 1 * MRP Board 0 5 10 15 20 25 30 35 40 45 50 Qg, TOTAL GATE CHARGE (nC) Fig. 11 Gate Charge DMN2015UFDE Datasheet number: DS35560 Rev. 10 - 2 0.01 0.01 5 of 8 www.diodes.com 0.1 1 10 VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 12 SOA, Safe Operation Area 100 February 2020 (c) Diodes Incorporated DMN2015UFDE r(t), TRANSIENT THERMAL RESISTANCE ADVANCE INFORMATION 1 D = 0.9 D = 0.7 D = 0.5 D = 0.3 0.1 D = 0.1 D = 0.05 D = 0.02 0.01 D = 0.01 R JA(t) = r(t) * R JA R JA = 61 /W C/W Duty Cycle, D = t1/ t2 D = 0.005 D = Single Pulse 0.001 0.00001 0.0001 DMN2015UFDE Datasheet number: DS35560 Rev. 10 - 2 0.001 0.01 0.1 1 t1, PULSE DURATION TIME (sec) Fig. 13 Transient Thermal Resistance 6 of 8 www.diodes.com 10 100 1,000 February 2020 (c) Diodes Incorporated DMN2015UFDE Package Outline Dimensions ADVANCE INFORMATION Please see http://www.diodes.com/package-outlines.html for the latest version. U-DFN2020-6 (Type E) A1 A U-DFN2020-6 Type E Dim Min Max Typ A 0.57 0.63 0.60 A1 0 0.05 0.03 A3 0.15 b 0.25 0.35 0.30 b1 0.185 0.285 0.235 D 1.95 2.05 2.00 D2 0.85 1.05 0.95 E 1.95 2.05 2.00 E2 1.40 1.60 1.50 e 0.65 L 0.25 0.35 0.30 L1 0.82 0.92 0.87 K1 0.305 K2 0.225 Z 0.20 All Dimensions in mm A3 D b1 K1 D2 E E2 L1 L(2X) K2 Z(4X) e b(6X) Suggested Pad Layout Please see http://www.diodes.com/package-outlines.html for the latest version. U-DFN2020-6 (Type E) Dimensions Y3 Y2 X2 C X X1 X2 Y Y1 Y2 Y3 Y1 X1 X(6x) DMN2015UFDE Datasheet number: DS35560 Rev. 10 - 2 C Value (in mm) 0.650 0.400 0.285 1.050 0.500 0.920 1.600 2.300 Y (2x) 7 of 8 www.diodes.com February 2020 (c) Diodes Incorporated DMN2015UFDE ADVANCE INFORMATION IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated website, harmless against all damages. Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application. Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks. This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the final and determinative format released by Diodes Incorporated. LIFE SUPPORT Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein: A. Life support devices or systems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems. Copyright (c) 2020, Diodes Incorporated www.diodes.com DMN2015UFDE Datasheet number: DS35560 Rev. 10 - 2 8 of 8 www.diodes.com February 2020 (c) Diodes Incorporated