1PS10SB62,315 - NXP - Datasheet.Live

DATA SH EET

Product speciﬁcation 2003 May 15

DISCRETE SEMICONDUCTORS

1PS10SB62

Schottky barrier diode

M3D891

BOTTOM VIEW

2003 May 15 2

Philips Semiconductors Product speciﬁcation

Schottky barrier diode 1PS10SB62

FEATURES

•Ultra high switching speed

•Very low capacitance

•High breakdown voltage

•Leadless ultra small plastic package

(1 mm ×0.6 mm ×0.5 mm)

•Boardspace 1.17 mm2 (approx. 10% of SOT23)

•Power dissipation comparable to SOT23.

APPLICATIONS

•Ultra high-speed switching

•High frequency applications

•Mobile communication, digital (still) cameras, PDAs and

PCMCIA cards.

DESCRIPTION

An epitaxial Schottky barrier diode encapsulated in a

SOD882 leadless ultra small plastic package.

ESD sensitive device, observe handling precautions.

handbook, halfpage

MDB391

Bottom view

Fig.1 Simplified outline (SOD882) and symbol.

Marking code: S1.

The marking bar indicates the cathode.

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 60134).

ELECTRICAL CHARACTERISTICS

Tamb =25°C unless otherwise speciﬁed.

Note

1. Pulse test: pulse width = 300 µs; δ= 0.02.

THERMAL CHARACTERISTICS

Note

1. Refer to SOD882 standard mounting conditions (footprint), FR4 with 60 µm copper strip line.

Soldering

Reflow soldering is the only recommended soldering method.

SYMBOL PARAMETER MIN. MAX. UNIT

VRcontinuous reverse voltage −40 V

IFcontinuous forward current −20 mA

Tstg storage temperature −65 +150 °C

Tjjunction temperature −150 °C

SYMBOL PARAMETER CONDITIONS MAX. UNIT

VFforward voltage IF= 2 mA; see Fig.2; note 1 800 mV

IRreverse current VR= 40 V; see Fig.3; note 1 1 µA

Cddiode capacitance VR= 0 V; f = 1 MHz; see Fig.4 0.6 pF

SYMBOL PARAMETER CONDITIONS VALUE UNIT

Rth j-a thermal resistance from junction to ambient note 1 500 K/W

2003 May 15 3

Philips Semiconductors Product speciﬁcation

Schottky barrier diode 1PS10SB62

GRAPHICAL DATA

handbook, halfpage

2.00.0 0.4 0.8 1.2 1.6

10−1

10−2

MDB388

VF (V)

(mA)

(1)

(2)

(3)

Fig.2 Forward current as a function of forward

voltage; typical values.

(1) Tamb = 125 °C.

(2) Tamb =85°C.

(3) Tamb =25°C.

handbook, halfpage

401003020

104

103

102

10−1

MDB389

VR (V)

(nA) (1)

(3)

(2)

Fig.3 Reverse current as a function of reverse

voltage; typical values.

(1) Tamb = 125 °C.

(2) Tamb =85°C.

(3) Tamb =25°C.

handbook, halfpage

01020 40

0.4

0.2

0.36

0.32

0.28

0.24

MDB390

(pF)

VR (V)

Fig.4 Diode capacitance as a function of reverse

voltage; typical values.

f = 1 MHz; Tamb =25°C.

2003 May 15 4

Philips Semiconductors Product speciﬁcation

Schottky barrier diode 1PS10SB62

PACKAGE OUTLINE

UNIT A1

max.

A(1) be

REFERENCES

OUTLINE

VERSION EUROPEAN

PROJECTION ISSUE DATE

IEC JEDEC JEITA

mm 0.50

0.46 0.55

0.47

0.03 0.62

0.55 0.65

DIMENSIONS (mm are the original dimensions)

Notes

1. Including plating thickness

2. The marking bar indicates the cathode

0.30

0.22

SOD882 03-04-16

03-04-17

1.02

0.95

(2)

Leadless ultra small plastic package; 2 terminals; body 1.0 x 0.6 x 0.5 mm SOD882

0 0.5 1 mm

scale

2003 May 15 5

Philips Semiconductors Product speciﬁcation

Schottky barrier diode 1PS10SB62

DATA SHEET STATUS

Notes

1. Please consult the most recently issued data sheet before initiating or completing a design.

2. The product status of the device(s) described in this data sheet may have changed since this data sheet was

published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com.

3. For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status.

LEVEL DATA SHEET

STATUS(1) PRODUCT

STATUS(2)(3) DEFINITION

I Objective data Development This data sheet contains data from the objective speciﬁcation for product

development. Philips Semiconductors reserves the right to change the

speciﬁcation in any manner without notice.

II Preliminary data Qualiﬁcation This data sheet contains data from the preliminary speciﬁcation.

Supplementary data will be published at a later date. Philips

Semiconductors reserves the right to change the speciﬁcation without

notice, in order to improve the design and supply the best possible

product.

III Product data Production This data sheet contains data from the product speciﬁcation. Philips

Semiconductors reserves the right to make changes at any time in order

to improve the design, manufacturing and supply. Relevant changes will

be communicated via a Customer Product/Process Change Notiﬁcation

(CPCN).

DEFINITIONS

Short-form specification  The data in a short-form

specification is extracted from a full data sheet with the

same type number and title. For detailed information see

the relevant data sheet or data handbook.

Limiting values definition Limiting values given are in

accordance with the Absolute Maximum Rating System

(IEC 60134). Stress above one or more of the limiting

values may cause permanent damage to the device.

These are stress ratings only and operation of the device

attheseoratany otherconditionsabove thosegivenin the

Characteristics sections of the specification is not implied.

Exposure to limiting values for extended periods may

affect device reliability.

Application information  Applications that are

described herein for any of these products are for

illustrative purposes only. Philips Semiconductors make

norepresentationor warrantythatsuchapplicationswill be

suitable for the specified use without further testing or

modification.

DISCLAIMERS

Life support applications  These products are not

designed for use in life support appliances, devices, or

systems where malfunction of these products can

reasonably be expected to result in personal injury. Philips

Semiconductorscustomersusing orsellingthese products

for use in such applications do so at their own risk and

agree to fully indemnify Philips Semiconductors for any

damages resulting from such application.

Right to make changes  Philips Semiconductors

reserves the right to make changes in the products -

including circuits, standard cells, and/or software -

described or contained herein in order to improve design

and/or performance. When the product is in full production

(status ‘Production’), relevant changes will be

communicated via a Customer Product/Process Change

Notification (CPCN). Philips Semiconductors assumes no

responsibility or liability for the use of any of these

products, conveys no licence or title under any patent,

makes no representations or warranties that these

products are free from patent, copyright, or mask work

right infringement, unless otherwise specified.

2003 May 15 6

Philips Semiconductors Product speciﬁcation

Schottky barrier diode 1PS10SB62

NOTES

2003 May 15 7

Philips Semiconductors Product speciﬁcation

Schottky barrier diode 1PS10SB62

NOTES

All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.

The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed

without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license

under patent- or other industrial or intellectual property rights.

Philips Semiconductors – a w orldwide compan y

Contact information

For additional information please visit http://www.semiconductors.philips.com. Fax: +31 40 27 24825

For sales ofﬁces addresses send e-mail to: sales.addresses@www.semiconductors.philips.com.

Printed in The Netherlands 613514/01/pp8 Date of release: 2003 May 15 Document order number: 9397 750 11303