IoT-Security Charger Power and sensing Selection guide 2020 www.infineon.com/powerandsensing-selectionguide Connectivity and linking the real to the digital world is no longer a dream - it is a lived reality. Future is something we create together to make life easier, safer, and greener. Andreas Urschitz, Division President of Power and Sensor Systems Dear reader, The era of convergence is here. The trends of the past - such as energy efficiency and security - are now global challenges: how do we sustainably feed our needs in mobility, IoT and big data? Together, these questions transform life as we know it, intertwining technology with humanity. From the cloud and the edge, personal vehicles and power tools, to drones and satellites, thousands of systems we use every day rely on efficient and intelligent power. Our next generation of silicon solutions and our wide-bandgap portfolio, including CoolSiCTM and CoolGaNTM devices, provide unparalleled performance and reliability for 5G, big data and renewable energy applications. The cooler, smaller and lighter MERUSTM audio amplifiers enable customers to achieve better-sounding systems and deliver exceptional audio performance in smart speakers and other audio home, portable and professional audio products. Collectively, we are building towards a new age of interaction with multiple devices. These need to perceive and respond to events while steadily extending and enhancing their performance to further ease our lives. We meet this challenge with intuitive sensing - by giving things human-like senses for a greater contextual awareness. Founded on Infineon's 40 years of experience in the development of sensor products, our XENSIVTM products deliver exceptional accuracy and best-in-class measurement performance. Spanning magnetic, pressure, acoustic, 3D image (REAL3TM) and radar sensor MMICs (RASICTM for automotive), our broad XENSIVTM portfolio ensures the perfect fit for all performance and integration needs - regardless of the industry. Building on the company's in-depth system understanding, the 2020 edition of the Power and Sensing Selection Guide offers a comprehensive selection of power and sensors system solutions for your future success. : "" CoolSiCTM CoolGaNTM 5G MERUSTM 40 XENSIVTM XENSIVTM (REAL3TM) MMIC RASICTM 2020 Andreas Urschitz, Division President of Power and Sensor Systems Contents Applications 6 Advanced system solutions for consumer applications 6 Class D audio amplifiers 8 Major home appliances 10 Smart speaker 14 20-300 V MOSFETs 86 500-950 V MOSFETs 122 Wide bandgap semiconductors 152 Discrete IGBTs 178 Power management ICs 200 Intelligent power switches and modules 276 Gate driver ICs 286 Microcontrollers 318 XENSIVTM sensors 344 Packages 382 Robotics18 SMPS - TV power supply 21 SMPS - mobile charger 24 Wireless charging 25 Wearables and healthtech 30 SMPS and digital power management solutions for data processing applications 32 DC-DC enterprise power solution for data processing applications 34 SMPS - laptop adapters 37 SMPS - PC power supply 39 SMPS - server power supply 40 SMPS - telecom power supply 42 Advanced system solutions for industrial applications 46 Smart building 48 Power over Ethernet 50 LED lighting 52 Power and gardening tools 54 Battery formation 56 Energy storage systems 58 Solar60 Uninterruptible power supply 64 SMPS - embedded power supply 69 SMPS - industrial SMPS 70 Advanced system solutions for transportation and infrastructure Fast EV charging 72 74 E-mobility78 Light electric vehicles and forklift 82 Multicopter84 4 Applications 20-300 V MOSFETs 500-950 V MOSFETs WBG semiconductors Discrete IGBTs Power ICs Intelligent switches and input ICs Gate driver ICs From product thinking to system understanding XENSIVTM sensors Microcontrollers Infineon enables efficient generation, transmission and conversion of electrical energy www.infineon.com/power Packages We make life easier, safer and greener - with technology that achieves more, consumes less and is accessible to everyone. For more details on the product, click on the part number. 5 Applications Advanced system solutions for consumer applications Class D audio amplifiers Major home appliances - air conditioning and induction cooking Smart speaker Service robots SMPS - TV power supply SMPS - mobile charger Wireless charging Wearables and healthtech For more details on the product, click on the part number. 6 Packages For more details on the product, click on the part number. 7 XENSIVTM sensors Microcontrollers Gate driver ICs Intelligent switches and input ICs Power ICs Discrete IGBTs WBG semiconductors 500-950 V MOSFETs 20-300 V MOSFETs Applications Class D audio Class D audio amplifiers No compromise on quality - products for exceptional audio performance At Infineon, we manufacture power-efficient class D audio amplifier solutions that maintain best-in-class audio quality, without heating up the surroundings. We believe smaller and lighter is better, and that the amplifier embedded in your product should be heard, but not seen. Our amplifier solutions help you design robust, flexible products that meet the needs of your customers and the market. Choose from our high-performance class D audio amplifier solutions for all power ranges and application requirements, from the smallest fully integrated single-chip solutions to highly scalable driver and power MOSFET combinations (for full portfolio of audio amplifier ICs, see pages 236-240). Design with Infineon's solutions to benefit from: Exceptional audio performance Maximized power efficiency Maximized output power Design freedom Fast time to market Portable/battery powered audio applications Home audio applications Professional audio applications Battery powered speakers: On-the-go Bluetooth speakers Docking speakers Boom boxes Wearable speakers Multiroom systems Audio hub TVs Sound bars Home theater systems Smart speakers Power-over-ethernet (PoE) Home audio audio systems Touring amplifiers Active speakers Public announcement 70-100 V systems Music instrument amplifiers Modern home audio products vary in shapes, sizes and configurations, but common requirement is great sound in combination with outstanding industrial and acoustic design. In addition to producing exceptional sound quality, MERUSTM amplifiers from Infineon can completely eliminate the need for bulky and expensive LC output filters and heatsinks. This allows design of new innovative and great sounding home audio products in form factors and shapes that were previously unthinkable. Solution example: 2.1 configuration (2xBTL + 1xPBTL) Wireless connection e.g., WiFi MA12070 MERUSTM integrated audio amplifier IC 4.1 configuration (4xBTL + 1xPBTL) MA12040 MERUSTM integrated audio amplifier IC Wireless connection e.g. WiFI MA12070 MERUSTM integrated audio amplifier IC Power supply unit Powersupply unit MA12070 MERUSTM integrated audio amplifier IC Solution specification Number of audio channels: 2 bridge-tied load (BTL) and 1 parallel BTL channels Peak power output: 2x80 W @ 4 , 10% THD and 160 W @ 2 , 10% THD Featured audio ICs: 2x MA12070 IR4302M MERUSTM integrated audio amplifier IC Solution specification Number of audio channels: 4 bridge-tied load (BTL) and 1 parallel BTL channels Peak power output: 2x80 W @ 4 , 10% THD and 160 W @ 2 , 10% THD Featured audio ICs:MA12040, MA12070 and IR4302M www.infineon.com/merus www.infineon.com/audio For more details on the product, click on the part number. 8 Bluetooth Bluetooth MA12040P MERUSTM integrated audio amplifier IC Battery powerunit 500-950 V MOSFETs Solution example: 2.1 configuration (2xBTL + 1xPBTL) MA12040P MERUSTM integrated audio amplifier IC WBG semiconductors Solution example: 2.1 configuration (2xSE + 1xBTL) 20-300 V MOSFETs Portable audio When designing portable/battery powered audio devices, it is essential to maximize battery playback time, and at the same time, maintain an excellent audio performance. Infineon's MERUSTM amplifiers provide up to twice as long battery playback time in combination with the best-in-class audio performance and unsurpassed sound quality. Battery powerunit MA12070P MERUSTM integrated audio amplifier IC Discrete IGBTs Solution specification Number of audio channels: 2 bridge-tied load (BTL) and 1 parallel BTL channels Peak power output: 2x40 W @ 4 , 10% THD and 160 W @ 2 , 10% THD Featured audio ICs: MA12040P and MA12070P including volume control and limiter Power ICs Solution specification Number of audio channels: 2 single-ended (SE) and 1 bridge-tied load (BTL) channels Peak power output: 2x10 W and 40 W @ 4 , 10% THD Featured audio IC: MA12040P including volume control and limiter Applications Class D audio Intelligent switches and input ICs Professional audio Professional audio equipment is all about maximizing output power and power density. With the conception of Infineon's MERUSTM multilevel class D technology and GaN-based CoolGaNTM e-mode HEMTs, it is now possible to conceive both amplifiers and power supply units with great audio performance and high efficiency in a very compact design. For engineers developing amplifiers, Infineon offers both monolithic and chip-set solutions with versatile MOSFET combinations for the scaling of output power. Solution example: public announcement 70-100 V system 70 V/100 V Analog input HPF & ATT IRS2452AM and MOSFET Step-down transformer Speaker (4/8 ) Solution specification Number of channels: 2 half bridge channels Peak power output: 500 W, 70 Vrms/100 Vrms, 1% THD Featured audio IC: IRS2452AM For full product portfolio, see 234-238. Packages www.infineon.com/audiosolutions Microcontrollers Solution specification Number of audio channels: 2 half-bridge channels Peak power output: 500 W @ 4 , 1% THD Featured audio ICs: IRS2092S, IRS20957S IRS2092S/ IRS20957S and MOSFET in parallel XENSIVTM sensors Level adjustment Mixer Gate driver ICs Solution example: active speakers For more details on the product, click on the part number. 9 Major home appliances Major home appliances Innovative approach for air conditioning Product designers are facing the daunting challenge of developing smaller, smarter, more powerful, and more energy-efficient appliances. Based on industry-leading technology and manufacturing expertise, Infineon's line of innovative components for household appliances meets and exceeds even the most rigorous requirements for reliability and quality. The block diagram of an air conditioning system shown below, together with the product selection table, provides an effective recommendation for engineers to select the right component for each power management stage inside major home appliances. Rectification Power management Plug DC supply IGBT Driver stage Gate driver ICs User interface & communication Central control unit AF discretes Sense and monitor M MCU Rotor position detection In addition to efficiency gain through power solutions, Infineon's XENSIVTM sensor portfolio also enhances the operation of major home appliances through advanced sensor-enabled use cases such as condition monitoring and predictive maintenance to detect potential device failures before they occur. Furthermore, integration of voice control or presence detection in those appliances increases user convenience and results in even more efficient devices. Product category Sensors Radar sensor Product family Benefits XENSIVTM MEMS microphones IM69D130 High performance microphone with low self-noise (high SNR) and low distortions enables noise monitoring for advanced predictive maintenance analytics XENSIVTM digital barometric pressure sensors DPSxxx Advanced predictive maintenance analytics are enabled based on highest precision and relative accuracy over a wide temperature range to detect anomalies in air flow XENSIVTM TLV493D-A1B6 3D magnetic sensor Accurate three-dimensional sensing with extremely low power consumption in a small 6-pin package to enable vibration and position monitoring of the compressor XENSIVTM TLI4970 current sensor Fully digital solution featuring high precision and ease of use, significantly reduces overall implementation efforts as well as PCB space to enable cost fan and compressor current measurement XENSIVTM 60 GHz radar sensor Accurate presence detection and vibration detection based on ability to track sub-millimeter motion at high speed and accuracy, in both stand-alone chip as well as system solution available www.infineon.com/homeappliance For more details on the product, click on the part number. 10 Applications 20-300 V MOSFETs 500-950 V MOSFETs WBG semiconductors Discrete IGBTs Selection/benefit 600V HighSpeed 3 Recommendation IGBT-PFC CCM (low frequency-SC) 600V TRENCHSTOPTM Performance Recommendation IGBT-PFC CCM (cost competitive-no SC) 650V TRENCHSTOPTM 5-H5 Recommendation IGBT - PFC CCM (low losses - SC) 650 V TRENCHSTOPTM IGBT6 Recommendation IGBT - PFC 600 V TRENCHSTOPTM Advanced Isolation Recommendation 650 V TRENCHSTOPTM 5 WR5 Recommendation MOSFET-PFC CCM 600V CoolMOSTM P7 Reference Diode-PFC CCM 650V Rapid 1 and Rapid 2 diodes Recommendation Controller-PFC CCM - ICE2PCS0xG, ICE3PCS0xG Recommendation IPM - PFC CCM 650 V CIPOSTM Mini PFC interleaved IPM series, CIPOSTM PFC integrated IPM series Recommendation Low-side gate driver IC - PFC 25 V Single low-side driver EiceDRIVERTM 1ED44176N01F, 1ED44175N01B, 1ED44173N01B * OCP, fault and enable function in DSO-8/SOT23-6 Dual low-side driver IRS4427S Rugged and reliable in DSO-8 Single low-side driver IRS44273L Rugged and reliable in SOT23-5 Half-bridge gate driver - totem pole PFC 650 V EiceDRIVERTM 2ED2304S06F, 2ED2106S06F, 2ED2182S06F SOI with integrated bootstrap diode IGBT-B6-VSI 650V TRENCHSTOPTM IGBT6 Efficiency IGBT-B6-VSI 600V RC-Drives Fast, RC-D2 * Recommendation MOSFET - B6-VSI 600 V CoolMOSTM PFD7 Cost/performance IPM-B6-VSI 600V CIPOSTM Mini Recommendation Half-bridge gate driver ICs 650 V SOI with integrated bootstrap diode Half-bridge gate driver ICs 600 V EiceDRIVERTM 2ED2304S06F, 2ED2106S06F, 2ED2182S06F EiceDRIVERTM 2EDL05I06PF, 2EDL23I06PJ, IRS2890DS, 2ED28073J06F * Integrated bootstrap diode/FET Three-phase gate driver ICs 600 V 6EDL04I06PT, IR2136S, 6ED003L06-F2 OCP, fault and enable function AUX Flyback fixed frequency 700V CoolSETTM F5 * Recommendation Microcontroller/motor control IC 32-bit Arm(R) Cortex(R)-M4 - XMC4100/XMC4200 Recommendation iMOTIONTM - IRMCxx motor control IC (incl. motion control algorithm) Recommendation Microcontroller supply Linear voltage regulator Up to 20V IFX1763, IFX54441, IFX54211, IFX3008 Efficiency Communication CAN transceiver - IFX1050, IFX1051, IFX1040 Robustness Position sensing Angle sensor - TLE5009, TLI5012B Recommendation Hall switch - TLI496x Recommendation XENSIVTM sensors DC-AC IGBT - PFC (cost competitive - no SC) Intelligent switches and input ICs Voltage class Technology/product family IGBT-PFC CCM (high frequency-SC) Gate driver ICs Topology Microcontrollers Functional block PFC AC-DC Power ICs Recommended products * For more information on the product, contact our product support Packages www.infineon.com/homeappliance For more details on the product, click on the part number. 11 Major home appliances Major home appliances Highest performance and efficiency for induction cooking Resonant-switching applications such as induction cooktops and inverterized microwave ovens have unique system requirements. The consumer marketplace demands them to be cost-effective, energy efficient, and reliable. To achieve the named goals, designers need solutions that are developed specifically for these applications. Infineon's reverse conducting (RC) discrete IGBTs were developed for resonant switching with a monolithically integrated reverse conducting diode. With technology leadership and a broad portfolio of devices with voltage classes ranging from 650 to 1600V, Infineon provides the industry benchmark performance in terms of switching and conduction losses. The latest RC-H5 family, previously offered with blocking voltages of 1200 V and 1350 V in a wide current range from 20 A to 40 A, is now with the addition of a new 1350 V, 20 A IGBT completed. The Integrated Power Device Protect (IPD Protect), IEWS20R5135IPB, is a new device in Infineon's portfolio for induction cooking applications, which adds new functionalities to standard discrete IGBTs. The innovative IPD Protect combines a 1350 V, 20 A IGBT in RC-H5 technology with a unique protecting gate driver IC in a TO-247 6-pin package. The RC-E family is cost- and feature-optimized specifically for low- to mid-range induction cookers and other resonant applications. This new family offers Infineon's proven quality in RC IGBTs with the best priceperformance ratio and ease of use. Infineon also offers a range of complementary products, such as low-side gate drivers and high-voltage level-shift gate drivers which can be used with the IGBTs, as well as in the central control and power supply subsystems of induction cooking appliances. Induction heating inverter (voltage resonance) Single switch Lf Cbus Gate driver ICs VAC Gate driver ICs MCU VAC Cbus MCU CK1 RC-IGBT Lres RC-IGBT Cres CK1 2 Lf Cres VAC Cres CK2 AUX 2 Lres CK2 2 Cres 2 Lf VAC Cbus Cbus Lres Cres Cres AUX RC-IGBT Gate driver ICs RC-IGBT RC-IGBT MCU Lf Lres RC-IGBT Gate driver ICs AUX AUX MCU Induction heating inverter (current resonance) Half-bridge www.infineon.com/homeappliance For more details on the product, click on the part number. 12 Applications 20-300 V MOSFETs 500-950 V MOSFETs WBG semiconductors Discrete IGBTs Topology Voltage class Technology/product family Selection/benefit DC-AC Series-resonant half-bridge Quasi-resonant single switch Quasi-resonant single switch Quasi-resonant single switch Quasi-resonant single switch Quasi-resonant single switch and protective driver Low-side gate driver 650V 1100V 1200V 1350 V 1600 V 1350 V 25 V Recommendation Recommendation Recommendation Recommendation Recommendation Integrated power device 1ED integrated with OPC, fault and enable functions Half-bridge gate driver 650 V/600 V Isolated gate driver 1200 V 32-bit Arm(R) Cortex(R)-M0 Linear voltage regulator Fixed-frequency flyback Up to 20V 700V Gate driver ICs SOI with integrated bootstrap diode Galvanic isolation, separate sink/source output, DESAT, Miller clamp Recommendation Efficiency Recommendation XENSIVTM sensors Microcontrollers Gate driver ICs Microcontroller Microcontroller supply AUX RC-H5 RC-H3 RC-H5, RC-E RC-H5 RC-H2 RC-H5/IPD Protect EiceDRIVERTM 1ED44176N01F, 1ED44175N01B, 1ED44173N01B, IRS44273L EiceDRIVERTM 2ED2304S06F, 2ED2106S06F, 2ED2182S06F, 2EDL23I06PJ EiceDRIVERTM 1EDI20I12AF, 1EDI20I12MF, 2ED020I12-F2 XMC1302 IFX54211 CoolSETTM F5 * Intelligent switches and input ICs Induction heating Power ICs Recommended products * For more information on the product, contact our product support Packages www.infineon.com/homeappliance For more details on the product, click on the part number. 13 Smart speaker Smart speaker Design speakers for an intuitive and outstanding user experience Once a novelty in households, speakers are more and more becoming a norm. With this rapid adaptation, user expectations are rising and the frustration with devices that are not understanding or hearing commands leads to lower usage rates and growth below its full potential. Components such as MEMS microphones and new technologies such as radar are key to improving the user experience in the smart speaker segment. Infineon has a long-standing expertise in both sensor and power solutions that fulfill the consumer market requirements in terms of outstanding performance as well as reliable customer service and operations. Features and benefits Key features Key benefits Low self-noise (high SNR) and distortion, a wide dynamic range, plus a high acoustic overload-point microphone Improved audio input and thus command recognition, especially in extended use cases such as whispering or longer distances to the speaker for better user experience Infineon's proprietary multilevel switching technology at fully rated power in a wide range of audio products Enables very low power loss under all operating conditions and enables the class D audio amplifier to be used in filterless configurations Ultrahigh power efficiency and cool operation of the audio amplifiers Extended battery playback time or the reduction of battery size without compromising on battery playback time to save cost Highly efficient and power-dense SMPS solutions Highly efficient charger in small form factor Application diagram RAM memory Microphone Flash memory DSP Amplifiers LED driver 60 GHz radar Application processor Temperature sensor WiFi/BT Light sensor RF switch Touch controller Charger or internal power supply AC Vin Main stage Primary side PWM control Rectification Switch Vout DC Power output SR and protocol control www.infineon.com/voiceinterface For more details on the product, click on the part number. 14 Applications 20-300 V MOSFETs 500-950 V MOSFETs WBG semiconductors Discrete IGBTs Recommended products Topology Product - XENSIVTM MEMS microphones IM69D130 Audio output Class D amplifier - MERUSTM class D audio amplifiers MA120xx Presence detection Radar sensor - XENSIVTM 60 GHz radar sensor SMPS Flyback converter Flyback Low voltage MOSFETs ACF, FMCI QR flyback ICs FFR flyback IC Synchronous rectification 700 V CoolMOSTM P7 (standard grade) 600 V CoolMOSTM PFD7 ICE5QSAG XDPS21071 OptiMOSTM PD Control ICs Low voltage MOSFETs Synchronous rectification Load switch IR1161LTRPBF OptiMOSTM 30 V High voltage MOSFETs Control ICs SNR) and low distortions represents a new benchmark in performance enabling superior user experience Cooler, smaller and lighter amplifiers designed to maximize power efficiency and dynamic range while providing best-in-class audio performance in product form factors for great sounding audio products Accurate presence detection and vibration detection based on ability to track sub-millimeter motion at high speed and accuracy, both stand-alone chip as well as system solution available Best price-competitive CoolMOSTM SJ MOSFET family Lower switching losses than a standard MOSFET Lower Qrr, lower hysteresis loss, low RDS(on) High efficiency and low standby power High power density and ideal for USB-PD Low conduction losses and reduced overshoot Logic level switching/S308/PQFN 3.3x3.3 packages available High efficiency / simple external circuitry Low conduction losses S308/PQFN 3.3x3.3 packages available XENSIVTM sensors Microcontrollers SMPS Load switch High performance microphone with low self-noise (high Gate driver ICs SMPS Synchronous rectification Benefits Power ICs Product family Microphones Intelligent switches and input ICs Functional block Audio input Packages www.infineon.com/voiceinterface For more details on the product, click on the part number. 15 Smart home Smart home Smartifying homes the secured way How does a smart home differ from a regular home? A smart home is equipped with technologies that make our lives more convenient and energy efficient. Today, the growing range of technologies encompasses smart home appliances, mobile devices and home automation systems, many of which are interconnected. But being `smart' in this sense requires appliances and systems fitted with the right semiconductor solutions. They empower smart appliances, devices and systems to make sense of their environment and current situation. Working together, sensors, controllers and actuators enable members of a smart home to properly collect, interpret and process real-time data, then trigger the appropriate action or response. In an age of mounting security threats, security solutions keep all activities and system secured and out of harm's way. From intelligent lighting control to optimized energy consumption, each smart home function depends on intelligent semiconductors. As this rapidly changing field continues to evolve and mature, having a reputable and reliable partner in smart home semiconductor technologies such as Infineon makes all the difference. Smart air conditioning Data privacy Smart lighting Smart home security Smart home appliances Surveillance and detection Benefit from our smart home expertise Unparalleled system knowledge Our in-depth system know-how coupled with our market expertice means you get application specific solutions that are best in class Lasting reliability With a proven track record, our high-quality products help keep our customers' business uncertainty at a minimum. Easy-to-integrate solutions We enable you to reduce your time-to-market thanks to easy-to-integrate products and a strong global support team for your designs. www.infineon.com/smarthome For more details on the product, click on the part number. 16 Applications 20-300 V MOSFETs 500-950 V MOSFETs WBG semiconductors Discrete IGBTs Power ICs Infineon's leading portfolio of best-fit, ready-to-use semiconductor solutions empowers you to create innovative smart home applications that meet both current and future demands. You can count on our components to be smart, secured and energy efficient. In our one-stop shop, you will find all components and solutions required for your project. Furthermore, our products are easy to integrate into your designs. Gate driver ICs Intelligent switches and input ICs As you forge new, unexplored territory in the smart home realm, our in-depth know-how of our components and their potential in smart homes and home automation systems enable us to support you through and through. At the cuttingedge of key smart home technologies, we are in the position to guide you through this exciting new market while you explore new opportunities and business models. Especially those new to smart homes will appreciate our easy-to-use smart home demo and our basic offering of solutions. Trusted security Contextual sensitivity with market-leading accuracy and reliability. For more natural, seamless interaction between humans, machines and the surroundings. The right, easy to implement security solutions for smart, always secured homes. We meet your design's evolving security needs without compromising on convenience. Ensure optimized system performance thanks to our deep system understanding and strong processing and steering know-how. The result: an excellent user experience. Efficient power management Our innovative power electronics technologies allow users to save energy and run applications at a market-leading low energy level. It's the basis for real green smart homes. XENSIVTM sensors Advanced sensing Crossapplication control Microcontrollers How Infineon's offering enhances your project Packages www.infineon.com/smarthome For more details on the product, click on the part number. 17 Robotics Robotics Superior solutions for industrial and service robotics Disruptive technologies have significantly changed our lifestyle in the past few decades. Now a new era is on the horizon - the age of robots. Robots are joining the ranks of innovative and disruptive technologies by revolutionizing traditional habits and processes. Today's robots are able to identify and navigate through surroundings, work alongside and even interact with humans. Moreover, they teach themselves the skills required to complete a new task. All this would not be possible without semiconductor solutions. Whether in an industrial robot, a cobot, an automated guided vehicle (AGV) or a service robot, intelligent semiconductors are the key enabler for all major robotic functions. Drawing on our insight into all facets of the robotics field, and with a comprehensive portfolio of power products and sensors on offer, we are able to provide reliable system solutions that address the latest trends in robotics like artificial intelligence, the Internet of Things, smart home, cloud based services, human machine interface etc., and add value to nearly every robot design. Features and benefits Key features Key benefits Fast time to market A complete eco-system of simulations, documentation, and demonstration boards enable a faster time to market Complete solutions - broad portfolio Whatever design specification, Infineon has the answer thanks to its comprehensive portfolio of products and solutions which you can easily tailor to your needs Extended battery lifetime and product life spans Overall system size and cost reduction High reliability of Infineon components results in prolonged product life spans Reduction of overall system size and cost thanks to small form factor and compact design of components, both of which are required for highest power density BOM savings thanks to lowest RDS(on) Security, quality, and safety Authentication Trustworthy hardware-based security As a security market leader with a proven track record and outstanding partner network for embedded security, Infineon provides highest quality standards and a safety-certified development process OPTIGATM Trust enables authentication of components connected to the system (e.g., battery pack recognition to avoid second-party batteries) Domestic robots - simplifying everyday life and work Structural system overview: domestic robots Charger Service robot (can be on board) AUX supplies 12 V 5 V, 3.3 V Others Drives 110/230 V~ AC grid Remote control monitoring Security controller Main controller WLAN/BT/GPS Human machine interface Motor drive Wheel motor Motor sensing Motor drive Blower/ blade motor Motor sensing Motor drive Other motors Motor sensing Smartphone/ tablet/computer WLAN/BT/GPS Power DC-supply (24 V/36 V/48 V/54 V) AUX DC-supply (12 V, 5 V, 3.3 V, ...) Central COM bus (Ethernet, CAN, I2C, SPI, ...) The latest generation of domestic robots is ushering in a new level of assistance and simplicity in homes and professional environments. They directly interact with humans, which introduces unique challenges from a design perspective, especially in domestic environments. Energy efficiency, long battery life as well as security aspects and sensing capabilities are key to user-friendly and safe designs. By choosing Infineon, you get a one-stop semiconductor shop for all your service-robot design needs. www.infineon.com/service-robotics For more details on the product, click on the part number. 18 20-300 V MOSFETs Cobots - advance through collaboration Applications Robotics Structural system overview: cobots Discrete IGBTs WBG semiconductors 500-950 V MOSFETs Cobots, or collaborative robots, work outside the limitation of a safety cell, in a direct interaction with real people. This setup requires a precise set of design features, especially for the sake of workplace safety. With Infineon's semiconductors for cobot systems, you benefit from the expertise of an experienced and reliable partner. Our radar and sensor solutions, for example, provide the tools to uphold even the highest safety standards and allow the robots to leave their formerly fenced working environment. Power ICs Mobile robots - driving production and logistics forward Structural system overview: battery-powered mobile robots XENSIVTM sensors Microcontrollers Gate driver ICs Intelligent switches and input ICs Autonomous mobile robots (AMRs) are a self-driving force behind automated manufacturing processes. Battery-powered systems offer the highest degree of flexibility within working environments. Covering the entire product portfolio for robotics applications - from the power supply to motor drives and sensors for navigation and environment scanning - Infineon is equipped to ensure AMRs can find their way through nearly all production environments. Packages www.infineon.com/service-robotics For more details on the product, click on the part number. 19 Robotics Recommended products Functional block Purpose Characteristics Component Type or Family Power: -Power supply -Power factor correction (PFC) -Charger -Battery management Power switches (0.4-6 kW output power) 25-150 V 20-75 V P-/N-channel - 60 to 20 V 600-800 V 600 V 600 V 600 V 600 V 650 V Schottky diode 800 V 200 V/650 V, half-bridge 650 V/1200 V, three-phase Arm(R) Cortex(R)-M0 microcontroller Arm(R) Cortex(R)-M4 microcontroller LDO and DC-DC switching regulators OptiMOSTM StrongIRFETTM Small signal MOSFETs CoolMOSTM P7 CoolMOSTM C7 CoolMOSTM CFD7 CoolGaNTM IGBT HighSpeed 5 CoolSiCTM CoolSETTM IRS2005M, IRS2007M, IRS2008M, 2ED2106S06F, 2ED2182S06F EiceDRIVERTM 1EDN/2EDN, 1ED44175, 2ED24427 * EiceDRIVERTM 1ED Compact/1EDF2/ 2EDF/2EDS EiceDRIVERTM 6EDL04, 6ED2230 XMC1100/XMC1300 XMC4200 e.g., IFX1763, IFX90121 Hardware-based, embedded security <12 V, <400 W 20-60 V OPTIGATM Trust B PROFETTM StrongIRFETTM 60 V 25-100 V, <1 kW P-/N-channel MOSFETs ranging from -60 V to 20 V 600 V, <500 W 650 V, <500 W 600 V/1200 V, <10 kW 1200 V, 10-20 kW Fully integrated, 600 V, 0.5-5 kW Fully integrated, 600 V, <20 kW Fully integrated, 1200 V, 10-20 kW 200 V/650 V, half-bridge SIPMOSTM * OptiMOSTM Small signal MOSFETs CoolMOSTM CFD7 CoolMOSTM CFD2 TRENCHSTOPTM CoolSiCTM CIPOSTM EasyPIMTM CoolSiCTM Easy1B * IRS2005M, IRS2007M, IRS2008M, 2ED2106S06F, 2ED2182S06F EiceDRIVERTM 1EDN/2EDN, 1ED44175, 2ED24427 * EiceDRIVERTM 1ED Compact/1EDF2/2EDF/2EDS EiceDRIVERTM 6EDL04, 6ED2230 NovalithICTM TLE986x, TLE987x XMC1000 microcontroller family XMC4000 microcontroller family AURIXTM iMOTIONTM TLx496x TLE/TLI5012B, TLE5014SP TLE5009/5109/5309/5501 TLV/TLE/TLI493D TLI 4970 TLI4971 DPS310 BGT24MTR11/12, BGT24MR2 IM69D120/IM69D130 REAL3TM IRS1125C */IRS1645C/IRS2381C IR43x1M, IR43x2M Industrial CAN transceiver ISOFACETM Linear driver ICs BCR3xx, BCR4xx DC-DC switch mode ILD4xxx, ILD6xxx AURIXTM e.g., TLE5009xxxD e.g., TLF35584 PFC power diodes Integrated power stage Gate driver ICs 20 V, non-isolated, low-side 650 V/1200 V, galvanic isolation Microcontroller Voltage regulators Motor control Battery authentication Motor inverter power switches Gate driver ICs Microcontroller Position and condition sensing Sensing: -Robot sensing -Environment sensing -Human machine interface Peripherals: -WLAN/BT/GPS -Human machine interface Object and condition sensing Audio Interface LED drivers Security and safety -Motion controller (incl. safety) -Security controller Controller Sensors Voltage regulators Security 20 V, non-isolated, low-side 650 V/1200 V, galvanic isolation 650 V/1200 V, three-phase Integrated gate driver ICs Automotive embedded power ICs Arm(R) Cortex(R)-M0 microcontroller Arm(R) Cortex(R)-M4 microcontroller TriCoreTM Safety certified security on-chip Fully integrated motor control ICs XENSIVTM magnetic Hall switches XENSIVTM angle sensor, digital I/F XENSIVTM angle sensor, analog I/F XENSIVTM 3D magnetic sensor, digital I/F XENSIVTM current sensor, digital I/F XENSIVTM current sensor, analog I/F XENSIVTM pressure/temperature sensor, digital I/F XENSIVTM 24 GHz radar sensor XENSIVTM MEMS microphones, digital I/F XENSIVTM ToF 3D imaging @ 38-100 k pixel Class D audio amplifier CAN, CAN FD, CAN PD @ 1-5 MBit/s Industrial interface ICs Driving currents from 10-250 mA Support currents from 150 mA to 3A TriCoreTM Safety certified with security on-chip Safe angle sensing - dual die structure DC-DC voltage regulator 12 V/5 V or 3.3 V; watchdog, error monitoring, safe state control, BIST etc. Hardware-based, embedded security solutions, mutual authentication, secure communication, key protection, data signing etc. OPTIGATM TPM/Trust B/Trust X www.infineon.com/service-robotics For more details on the product, click on the part number. 20 SMPS - TV power supply 20-300 V MOSFETs SMPS Applications TV power supply Diversify TV power supply with cost, performance, and ease of use WBG semiconductors 500-950 V MOSFETs In addition to their outstanding image quality, new generation TVs gain attention for their user interface, low power consumption, and slim design. This requires the power supply unit (PSU) to either keep a low profile to maintain the slim appearance of a TV and a low thermal dissipation image or to have an external adapter. In addition, a growing number of TV manufacturers will use external adapters to deliver DC power to the TV. Infineon introduced two products based on digital power technology, designed to meet challenging efficiency and standby power requirements for the IoT-enabled TVs (both embedded PSU and adapter). Discrete IGBTs Thanks to digital power, our customers can reduce the number of TV power supplies by adapting the digital IC parameters to different TV and screen models by flexible and easy parameter setting. Infineon's recently introduced digital-based flyback controllers are ideal to implement in low-power adapters for TVs and monitors. With the digital soft switching, the adapter power density can be improved significantly. The 600 V CoolMOSTM P7 series has been developed to cover a broad spectrum of different applications where the excellent performance and perfect ease of use are required. The rugged body diode enables not only the use in hard-switching topologies, such as power factor correction, boost, and two transistor forward, but also in resonant topologies such as LLC where the technologies lead to high efficiency in both hard-switching and resonant circuits. For higher on-state resistance (RDS(on)) classes, there is a new feature of an integrated ESD diode that helps improve the Intelligent switches and input ICs Power ICs quality in manufacturing. At the same time, the low RDS(on) and gate charge (QG) enable high efficiency in the various topologies. The 600 V CoolMOSTM P7 comes with a wide variety of RDS(on)s and packages on consumer grade to make it best suitable for TV power by balancing the cost and performance. Infineon developed specifically for TV power supplies a family of packages, characterized by short lead, SOT-223 mold stopper, and wide creepage distance, which enable our customers' low-cost and reliable manufacturing. Active bridge Audio Gate driver ICs EMI filter LED driver IC Non-AUX digital solution for large screen size Main board PFC + LLC combo Microcontrollers High power solution for larger screen size Main board Active bridge OLED 2EDN gate driver Interleave PFC controller XENSIVTM sensors EMI filter 2EDN gate driver LLC controller AUX power Packages www.infineon.com/smps For more details on the product, click on the part number. 21 TV power supply Flyback solution for small screen size HV MOS Rectification AC input DC output PWM Recommended products Functional block Product category Topology Product family Main stage/PFC combo non-AUX High voltage MOSFETs 600 V CoolMOSTM S7 Active bridge Benefits Body diode robustness at AC line commutation Improved thermal resistance Absolute lowest R in the market Enables top-side cooling with DDPAK and QDPAK Ideal fit for solid state and hybrid relays and circuit breakers Fast-switching speed for improved efficiency Low gate charge for enhanced light-load efficiency and low power DS(on) 600 V CoolMOSTM P7 consumption at no-load condition Optimized V threshold for lower turn-off losses Rugged body diode for HB LLC application Robustness and reliability with integrated robust, fast body diode and up GS DCM PFC, HB LLC 600 V CoolMOSTM PFD7 to 2 kV ESD protection in gate Reduced gate charge for enhanced light-load efficiency, and lower hysteresis loss Control ICs IDP2308 PFC-LLC non-AUX digital IC for TV embedded PSU IDP2303A PFC-LLC non-AUX digital IC for TV adapter Synchronous rectification Low voltage MOSFETs Synchronous rectification OptiMOSTM 5 100-150 V PFC Boost diodes DCM PFC 650V Rapid diode Control ICs CCM PFC ICs ICE3PCS0xG Main stage Control ICs HB LLC ICs ICE1HS01G-1/ICE2HS01G Auxiliary power supply Control ICs QR/FF flyback CoolSETTM 700V/800V- ICE5QRxx70/80A(Z)(G) Flyback Control ICs Digital ZVS flyback IDP2105 * High voltage MOSFETs Flyback 700 V CoolMOSTM P7 Low BOM count/system cost due to high integration Low standby power High system reliability Shorter development cycles and higher design and production flexibility Low BOM count/system cost due to high integration Low standby power Small form factor designs High system reliability Low conduction losses, reduced overshoot FullPAK package available Low conduction losses High PFC and low THD High efficiency and low EMI Low standby power, high efficiency, and robustness Forced resonant ZVS control reduces the switching loss Multilevel protection enables the robust design Flexible firmware provides more differentiation for OEMs Optimized for flyback topologies Best price competitive CoolMOSTM SJ MOSFET family Lower switching losses versus standard MOSFET Controlled dV/dt and di/dt for better EMI www.infineon.com/smps *For more information on the product, contact our product support 22 For more details on the product, click on the part number. Applications 20-300 V MOSFETs 500-950 V MOSFETs WBG semiconductors OLED LLC controller IC On/off control Supply for OLED display Power ICs OLED LLC stage Vin VBUS Rectifier + PFC stage VCC Main LLC stage Supply for standby mode OLED module and TV system Intelligent switches and input ICs PFC not active in standby mode AC Discrete IGBTs OLED TV power block diagram Supply for system Supply for system Power on control startup Status information Gate driver ICs Main LLC/PFC combo-controller IC XENSIVTM sensors Microcontrollers Benefiting from several advantages of organic light emitting diodes (OLED), various TV manufacturers are developing OLED TVs to level up the user experience of their consumers. Comparing with LCD/LED TV panels, the OLED can be thinner, lighter, and more flexible, also the power consumption is lower. With the excellent performance of Infineon's GaN e-mode HEMTs (for full portfolio see pages 156-160), the OLED TV becomes even thinner and more reliable. Packages www.infineon.com/smps For more details on the product, click on the part number. 23 Mobile charger SMPS - mobile charger SMPS Charger Best solutions for mobile charger Modern mobile devices require a charger that provides faster charging but comes in a small size. High power density and cost-effective power supplies can be designed by operating the converter at a higher switching frequency to avoid a considerable increase in the transformer and the output capacitor size. In achieving the required thermal performance and EMI behavior, power devices with lower losses and controlled switching behavior enable effective and fast product development. Infineon's state-of-the-art digital-based controller, XDPS2107, enables the forced frequency resonant flyback (zero voltage switching) operation, ideal to be implemented in high power density adapters and well-supporting USB-PD requirements. To address these requirements, Infineon offers its CoolMOSTM P7 SJ MOSFET family for adapters and chargers. Special care has been taken to ensure very good thermal behavior, increased efficiency, and fulfillment of all EMI requirements, enabling our customers to easily design products based on this new family. In addition, power devices in IPAK/SMD packages enable optimal PCB layout through minimal footprint. SMD packages offer additional benefits for automatized large volume production. Specifically, high power density at low manufacturing cost can be delivered using Infineon's SOT-223 cost-effective package, which enables SMT manufacturing to maintain very good thermal performances. The digital soft-switching controller, CoolMOSTM high-voltage MOSFETs, OptiMOSTM low-voltage MOSFETs and synchronous rectification IC portfolios, enable high power density designs whilst meeting the thermal requirements. Vin AC Vout Main stage Rectification Switch DC Primary-side PWM control Type-C connector SR and protocol control Functional block Product category Topology Product family Flyback converter High voltage MOSFETs Flyback 700 V CoolMOSTM P7 (standard grade) ACF, FMCI 600 V CoolMOSTM PFD7 (standard grade) Benefits Best price competitive CoolMOSTM SJ MOSFET family Lower switching losses versus standard MOSFET Robustness and reliability with integrated robust fast body diode and up to 2 kV ESD protection Reduced gate charge for enhanced light-load efficiency Synchronous rectification Load switch Control IC FFR flyback IC XDPS21071 Low voltage MOSFETs Synchronous rectification OptiMOSTM PD 25 V - 150 V Control IC Synchronous rectification IR1161LTRPBF Low voltage MOSFETs Load switch OptiMOSTM PD 25 V/30 V Lower hysteresis loss High power density and ideal for USB-PD Low conduction losses and reduced overshoot Logic level switching S308/PQFN 3.3 x 3.3 package available High efficiency Simple external circuitry Low conduction losses S308/PQFN 3.3 x 3.3 package available www.infineon.com/smps For more details on the product, click on the part number. 24 20-300 V MOSFETs Wireless charging solutions Cost-effective and secure offerings for consumer, industrial and automotive applications WBG semiconductors 500-950 V MOSFETs Over the last years, wireless charging has gained more and more traction in the market and is expected to heavily influence our daily lives in future. Infineon offers a broad portfolio of efficient, high-quality products and solutions to serve the key requirements of the dominant market standards: inductive (Qi (WPC)) and resonant (AirFuel). Whether you charge a smartphone (e.g. at home or in the car), a handful of wearables, a power tool, a laptop or a service robot, Infineon's components and solutions help you overcome a wide range of common wireless power transfer challenges for consumer, industrial, and automotive wireless charging designs. Wireless charging standards Magnetic resonance Resonant AirFuel 6.78 MHz Exact positioning Positioning more flexible (X and Y direction) Free positioning (up to >30 mm vertical freedom) Charges only one device Charges one device but with better user experience Charges multiple devices Positioning of receiver application Rx-Tx communication In-band communication Discrete IGBTs Qi inductive 110-205 kHz Standard Number of devices charged Inductive multi-coil Power ICs Inductive single-coil Bluetooth low energy or in-band communication Intelligent switches and input ICs Many end markets for wireless charging or wireless power transfer XENSIVTM sensors Microcontrollers Gate driver ICs Infineon's key enabling products for consumer, industrial, and automotive solutions Low and medium voltage power MOSFETs - OptiMOSTM and StrongIRFETTM Gate driver ICs - EiceDRIVERTM or DC-DC low voltage gate driver 32-bit microcontrollers - XMCTM and AURIXTM Wireless power controller (including software IP) - XMCTM-SC and AURIXTM P-channel and N-channel small signal power MOSFETs High-voltage power MOSFETs - CoolMOSTM Superjunction MOSFETs PWM/flyback controllers and integrated power stage ICs - CoolSETTM Gallium nitride (GaN) - CoolGaNTM e-mode HEMTs Dedicated automotive power products - MOSFETs, DC-DC, LDO, PMIC with ASIL qualification Voltage and buck regulators for component and bridge supply Authentication - OPTIGATM Trust Qi * Reverse conducting IGBTs - 650V TRENCHSTOPTM 5 Packages www.infineon.com/wirelesscharging * Available when WPC Qi specification is released Applications Wireless charging For more details on the product, click on the part number. 25 Wireless charging Components for inductive designs for consumer and industrial applications Especially for the emerging higher power (15 W+) transmitter applications equipping your half- or full-bridge topologies with components from the OptiMOSTM product family, driver ICs, and voltage regulators pays off with superior power transfer performance. Single and dual N-channel OptiMOSTM versions with excellent RDS(on) and charge characteristics are available in small footprint packages for your wireless power transmitter design. For multicoil designs, there are very suitable IR MOSFETTM devices in 2 x 2 mm packages ready to use. In addition, Infineon's XMCTM 32-bit industrial microcontrollers provide the flexibility to charge "just about anything". Infineon's portfolio supports individual needs by either an Arm(R) Cortex(R)-M0 core (XMC1000 family) or a Cortex(R)-M4 core with a floating point unit (XMC4000 family). In addition, wireless power controllers - XMCTM-SC, including software IP, are available for selected applications in our portfolio (for further details check page 327). Ensuring that you, your data, and your devices remain secured and safe during charging, Infineon adds a new member to its OPTIGATM Trust family - the OPTIGATM Trust UWP. Infineon readily supports the WPC Qi authentication standard with an integrated turnkey solution. System diagram: inductive wireless charging - 15 W Qi transmitter for smartphones BSS223PW (Supply switch) BSS138W (Small signal) L VIN 9 V/12 V (LDO) 5V 1EDN7512B (Driver) BSZ097N04 (FET) 5V IFX20002MBV33 (LDO) XMC6521SCQ040X (WP MCU) WCDSC006 (Driver) BSZ097N04 (FET 2x) L C Inductive (Qi) and low frequency transmitter solutions Products Voltage class Package Part number MOSFETs 20 V PQFN 2 x 2 IRLHS6242 11.7 (= 2.5 V drive capable) Right fit IRFHS8242 21 Right fit BSC0996NS 11.8 Right fit BSC0993ND 7 Best performance BSZ0589NS 4.4 Best performance BSZ0994NS 8.6 Right fit BSZ0909NS 15 Right fit BSZ0909ND 25 Best performance BSZ0910ND 13 Best performance IRFHS8342 25 Right fit IRLHS6342 15.5 (= 2.5 V drive capable) Best performance PQFN 3.3 x 3.3 BSZ097N04LS 14.2 Right fit SuperSO8 BSC035N04LSG 5.3 Right fit TO-247-3 IHW30N65R5 (30 A) 25 V 30 V SuperSO8 PQFN 3.3 x 3.3 PQFN 3.3 x 3.3 dual PQFN 2 x 2 40 V Reverse conducting IGBTs 650 V RDS(on) max @ VGS = 4.5 V [mQ] Recommendation IHW40N65R5 (40 A) IHW50N65R5 (50 A) Gate driver ICs EiceDRIVERTM 1EDN7512B, 2EDN7524G, IRS2007M, 2ED2182S06F PX3519, IRS2301S, WCDSC006 Microcontroller or wireless power controller XMCTM MCU and wireless power controller XMCTM-SC (including software IP) Voltage regulators IR3841M * *, IFX20002, IFX91041EJV50, IFX90121ELV50, IFX81481ELV Small signal MOSFETs BSS209PWH6327, BSS138WH6433 * * - Please check online 1) Authentication SLS32AIA020Ux - OPTIGATM Trust Qi * (USON10 3 x 3 package) Find here additional MOSFET and driver IC offerings! www.infineon.com/cms/en/tools/solution-finder/product-finder/gate-driver www.infineon.com/cms/en/tools/solution-finder/product-finder/mosfet-finder www.infineon.com/wirelesscharging 26 1) www.infineon.com/smallsignalmosfets * Available when WPC Qi specification is released * * For more information on the product, contact our product support For more details on the product, click on the part number. 20-300 V MOSFETs Components for resonant designs for consumer and industrial Applications Wireless charging WBG semiconductors 500-950 V MOSFETs Infineon offers superior power MOSFET technologies especially in the 30-100 V classes for class D inverter designs and in the 150-250 V voltage classes for class E inverters to address MHz switching implementations. We provide industry leading products when it comes to fast switching and have the best figure of merit for gate charge times RDS(on) and for Coss thus enabling our customer to achieve 6.78 MHz inverter designs using robust silicon MOSFET technology. CoolGaNTM 600 V with low and highly linear COSS, as well as low QC, enables high efficiency at higher power levels, especially in higher power class E designs. The CoolGaNTM portfolio qualifying for the use in wireless charging applications will be extended by adding 100 V and 200 V products over the next years. Infineon offers the "coolest" driver ICs in the industry, already available as low-side drivers for class E implementations and very soon as level shifted half-bridge driver for class D topologies. If your transmitter design uses a pre-regulator (buck or buck/boost) to control the input voltage of your amplifier you can find OptiMOSTM solutions in the 20-300 V MOSFETs section. Here again, the XMCTM industrial mircocontroller and the XMCTM-SC wireless power controller, including software IP, are a great fit to charge "just about anything". PX3519 (Driver) XMC8511SC-Q040X Wireless power controller IFX78M05 (LDO) BSZ0909ND (Dual FET) Optional: XMC8201SC-Q024X Wireless power controller 2EDN7524R (Driver) IRL80HS120 (FET 2x) L Buck Power ICs VIN Discrete IGBTs System diagram: resonant wireless charging - 2.5 W transmitter and recevier - 6.78 MHz - proprietary solution VOUT C Part number RDS(on) max @ VGS = 4.5 [mQ] PQFN 2 x 2 dual PQFN 3.3 x 3.3 dual QG typical [nC] GaN e-mode HEMT IRLHS6376PBF * * * 48 BSZ0909ND 25 BSZ0910ND 13 SOT-23 IRLML0030PBF 33 40 V SOT-23 IRLML0040 62 60 V SOT-23 IRLML0060 98 80 V PQFN 2 x 2 IRL80HS120 32 100 V PQFN 2 x 2 IRL100HS121 42 150 V PQFN 3.3 x 3.3 BSZ900N15NS3 75 * * BSZ520N15NS3 42 * * 200 V BSZ900N20NS3 78 * * BSZ22DN20NS3 200 * * BSZ12DN20NS3 111 * * 250 V BSZ42DN25NS3 375 * * CoolGaNTM 600 V e-mode GaN HEMT IGT60R190D1S (HSOF-8-3) 2.8 1.8 5.6 2.75 2.8 2.6 3.5 2.7 4.1 * * 7.2 * * 7.2 * * 3.5 * * 5.4 * * 3.6 * * Gate driver ICs EiceDRIVERTM 2EDL71 *, 1EDN7512, 2EDN7524, 2ED2182S06F, 2ED24427N01F * * *, 1EDI60N12AF Microcontroller or wireless power controller Voltage regulators Small signal MOSFETs GaN EiceDRIVERTM gate driver ICs 1EDS5663H, 1EDF5673F, 1EDF5673K XMCTM MCU and wireless power controller XMCTM-SC * (including software IP) IR3841M * * *, IFX20002, IFX91041EJV50, IFX90121ELV50, IFX81481ELV Please check online 1) Coss typical [pF] 32 120 230 84 49 37 68 62 46 80 52 24 39 21 Topology Class D Class D Class D Class D Class D Class D Class D/E Class D/E Class E Class E Class E Class E Class E Class E Gate driver ICs 30 V Package Microcontrollers MOSFETs Voltage class XENSIVTM sensors Products Intelligent switches and input ICs Components for resonant (AirFuel) and high frequency solutions Find here additional MOSFET and driver IC offerings! www.infineon.com/cms/en/tools/solution-finder/product-finder/gate-driver www.infineon.com/cms/en/tools/solution-finder/product-finder/mosfet-finder * On demand * * VGS = 8 V * * *For more information on the product, contact our product support Packages www.infineon.com/wirelesscharging For more details on the product, click on the part number. 27 Wireless charging Wireless in-car charging (automotive) The next generation of in-cabin wireless charging systems have to meet strict automotive safety, security, environmental, and regulatory requirements while still enabling industry-leading charging performance and efficiency. Infineon's AURIXTM microcontroller, voltage regulators, power MOSFET technologies, and network ICs will easily support these requirements with a complete charging solution. With 15 W charging that meets existing standards, including fast-charging smartphones, the solution easily supports future changes with a software update. Infineon's new innovative foreign object detection (FOD) system or our unique improved power drive architecture that provides unparalleled EMI performance are just two benefits out of many to address the design challenges in the automotive wireless charging market. Discover our complete offerings for in-cabin charging on a system level on Infineon's wireless charging webpage - something you will not find just anywhere. System diagram: AURIXTM-based wireless charger - three-coil IPG20N10S4L-22 (100 V) (coil switches) VBAT 5-40V TLD5190QV (Buck/Boost) IPG16N10S4L-61A (2x Dual FET) TLE8366 Pre-regulator AUIRS2301S (Driver) IPG20N04S4L-11A (Dual FET) 5 V gate DRV AURIX TM SAK-TC212S-8F133SC TLS203B0 (LDO) 3.3 V Coil 1 Coil 2 Coil 3 Wireless power controller AUIRS2301S (Driver) IPG20N04S4L-11A (Dual FET) NFC radio TLE7250VSJ (CAN) Automotive products for wireless charging Inverter automotive grade MOSFETs Automotive products for wireless charging Coil selection switch CAN interface Voltage class 40 V Voltage class Package Part number RDS(on) max @ VGS = 4.5 V [mQ] QG typical [nC] SuperSO8 5 x 6 dual IPG20N04S4-12A 15.5 9 S3O8 3.3 x 3.3 IPZ40N04S5L-4R8 6.7 11 IPZ40N04S5L-7R4 10.7 6.5 Package Part number RDS(on) max @ VGS = 4.5 V [mQ] RDS(on) max @ VGS = 10 V [mQ] 60 V TDSON-8 IPG20N06S4L-11A 15.8 11.2 100 V SuperSO8 5 x 6 dual IPG20N10S4L-22A 28 22 IPG20N10S4L-35A 45 35 IPG16N10S4L-61A 78 61 Microcontroller and wireless power controller AURIXTM SAK-TC212S-4F100N *, SAK-TC212S-8F133SC Power supply TLD5190 - buck-boost controller/TLE8366, TLS4120x, TLS203x/TLF35584 - safety MCU supply + CAN supply CAN TLE7250SJ - high performance CAN transceiver Gate driver ICs AUIRS2301S www.infineon.com/wirelesscharging *For more information on the product, contact our product support 28 For more details on the product, click on the part number. 20-300 V MOSFETs System solutions for wireless charging 15 W inductive 1-15 W inductive 500-950 V MOSFETs Master your design challenges with Infineon. With our broad range of designs, customers have the possibility to make wireless charging available for different kinds of applications. For more information on the availability of our boards, please visit www.infineon.com/wirelesscharging or get in contact with us via www.infineon.com/support. Inductive solutions Resonant solutions 60-200 W inductive 2.5 W resonant 16/20 W resonant >20 W resonant Discrete IGBTs WBG semiconductors Dedicated for automotive in-cabin wireless charging Automotive Applications Wireless charging Consumer/industrial Power ICs Reference design Valkyrie - the 15W Qi transmitter (Tx) for charging smartphones REF_10WTx_QI_4102 * 7.5 W / 10 W Frequency fixed 127.8 kHz (Apple iOS), variable (Android) Input power supply USB QC 3.0 (9 V / 12 V) Topology boost topology (half-bridge solution) Power regulation method Variable voltage boost (added frequency control for Android) Rx-Tx communication In-band communication (bi-directional) Supports WPC 1.2.4 EPP Charging rates Rx Up to 15 W FOD measurements calculated Tx power Direct AC measurement at coil DC-DC efficiency 83% Dimensions L: 85 mm, W: 50 mm, H: 6.4 mm / Active area: L: 45 mm, W: 40 mm Coil type MP-A11 Gate driver ICs REF_10WTx_QI-4102 Solution max. power capability [W] Microcontrollers Board number Intelligent switches and input ICs Board specification Spark Connected Inc. is our official partner for wireless charging. The software IP is provided by our partner. For details visit: www.sparkconnected.com XENSIVTM sensors Find the right solutions for your wireless charging designs in four steps Infineon's selection tool for wireless charging allows you to find the right solutions for your designs in just four steps: select the application, power range, standard, and the topology you want to apply and get an overview of Infineon's most recommended offerings. Try now! *On demand Packages www.infineon.com/wirelesscharging For more details on the product, click on the part number. 29 Wearables and healthtech Wearables and healthtech Next level of wearable devices with Infineon`s sensing, RF, power, and security solutions Smart wearable devices have become an essential part of our lives and are expected to gain more popularity in the future. Wearables are devices that can be comfortably worn on the body and that are used for multiple purposes depending on the application. With Infineon`s product offerings, customers can solve design challenges such as data security, sensor accuracy, longer battery lifetime, small form factor of the components, device protection, and differentiation between everyday movements and a fall. Key enabling products: XENSIVTM barometric pressure sensors OPTIGATM Trust B Broad RF switch portfolio GPS LNA 4G/5G LTE LNAs eSim XENSIVTM MEMS microphone Wireless charging solutions 3D Image Sensor REAL3TM 32Mb NVM ultralow power flash memory ESD protection SECORATM Connect XENSIVTM 60 GHz radar Wearable applications addressed by Infineon Smartwatch and sport watch Wristband Hearables AR/VR glasses Smart clothing Healthtech Highest accuracy Increased battery lifetime Fast and secure transactions Easy to integrate solutions Achieve robust and accurate altitude measurement, location tracking, precise single step or body motion detection Infineon's products with smallest form factors and low energy consumptions provide high functional integration and long-lasting battery Easy implementation of smart payment, ticketing or access control with Infineon's NFC solution Decrease your time to market. Thanks to our broad product portfolio and solution offerings such as wireless charging, eSim, ESD protection or authentication www.infineon.com/wearables For more details on the product, click on the part number. 30 Applications 20-300 V MOSFETs 500-950 V MOSFETs WBG semiconductors Discrete IGBTs Functional blocks of smartwatch, sports watch, and wristband Microcontroller Cellular RAM Security Interface Microphone Flash Touch interface ESDMicrocontroller protection Secure element + NFC eSIM Intelligent switches and input ICs BT/WiFi Memory GNSS (GPS, GLONASS, BEIDOU, GALILEO Power ICs Connectivity Sensing Authentication Sports/ activity sensing Internal power stage Wireless charging Battery management USB charging Internal power management Output power stage Haptic feedback Gate driver ICs Charging Environmental sensing Speaker Screen Microcontrollers Vital sensing Solution tree for smartwatch, sport watch, and wristband Wireless charging Sensing Product family OPTIGATM Trust B SLE 95250 SECORATM Connect * eSim: NC1025 * 2 W inductive * 2.5 W resonant * XENSIVTM pressure sensor DPS310/DPS368 Functional block Recommended parts and families Interface Broad ESD protection product portfolio XENSIVTM MEMS microphone Memory 32Mb NVM flash memory Connectivity XENSIVTM sensors Functional block Security Broad 4G/5G LNA product portfolio GNSS LNA: BGA123L4, BGA123N6, BGA524N6, BGA125N6 Broad RF switches portfolio * Available on request Packages www.infineon.com/wearables For more details on the product, click on the part number. 31 SMPS and digital power management solutions for data processing applications DC-DC enterprise solutions for data processing applications SMPS - laptop adapters SMPS - PC power supply SMPS - server power supply SMPS - telecom power supply For more details on the product, click on the part number. 32 Packages For more details on the product, click on the part number. 33 XENSIVTM sensors Microcontrollers Gate driver ICs Intelligent switches and input ICs Power ICs Discrete IGBTs WBG semiconductors 500-950 V MOSFETs 20-300 V MOSFETs Applications DC-DC DC-DC enterprise power solution for data processing applications Multiphase and point-of-load DC-DC solution As an industry leader in digital power management, Infineon delivers solutions for the next-generation server, communication, storage and client computing applications. Infineon offers a complete portfolio including digital PWM controllers, integrated power stages, integrated point-of-load (POL) voltage regulators, MOSFET drivers, power blocks and discrete MOSFETs. These proven technologies offer full flexibility to our customers to optimize a complete system solution for space, performance, ease of design and cost to meet critical design goals. In addition, our latest software tools help simplify design, shorten design cycles and improve time-to-market. Features and benefits Key features Key benefits Best-in-class efficiency Digital controller and power stage provide industry`s highest efficiency of more than 95 percent Multi-protocol support Complete system solution Digital controller flexibility Ease of design Smallest solution size Intel SVID, AMD SVI2, NVIDIA PWM VID, parallel VID (up to 8 bits) , PMBusTM Rev1.3, AVS Bus (PMBusTM Rev1.3) A broad portfolio of fully integrated point-of-load, integrated power stage and digital controller solutions in addition to discrete drivers and MOSFETs offers full flexibility to optimize complete system solutions ranging from 1 A to 1000+ A. Industry`s benchmark for feature richness and low quiescent power with up to 16-phases Intuitive GUI enables faster optimization, thereby reduces design cycle time Best-in-class OptiMOSTM MOSFETs combined with advanced packaging technologies enable high power density at high efficiency, and the superior control engine with digital controllers helps minimize output capacitance significantly AC adapters OptiMOSTM Battery charger Chipset, I/O, other peripheral loads DC-DC PWM controller OptiMOSTM OptiMOSTM CPU, GPU, DDR www.infineon.com/dataprocessing For more details on the product, click on the part number. 34 Applications 20-300 V MOSFETs 500-950 V MOSFETs WBG semiconductors Discrete IGBTs Powered ICs Server-Intel/IBM/AMD/ARM Workstation Storage Server chipset Voltage VCCIO Vcore VMCP Vmem High-end consumer Vcore PC chipset Graphics Comms Telecom Base station (macro + distributed) ASIC ASSP FPGA Networking SoCs and ASICs, FPGAs ASICs (~1.0 V) Multi-core processors ASSPs (~1.0 V) Ethernet switch ICs 10-30 A single-phase (multi-rail) >30 A multiphase/rail XENSIVTM sensors Datacom Comms core SOHO SAN Edge access FPGAs (~0.5-3.3 V) Gate driver ICs Graphic Industrial PC Microcontrollers High-end desktop Notebook Gaming Intelligent switches and input ICs Server/storage Power ICs Multiphase DC-DC system solution Packages www.infineon.com/dataprocessing For more details on the product, click on the part number. 35 DC-DC DC-DC enterprise power solution for data processing applications Integrated point-of-load (IPOL) converters Infineon's IPOL converters integrate a PWM controller, a driver and MOSFETs into a small PQFN package for ease of use. The patented PWM modulation scheme allows greater than 1 MHz switching frequencies to deliver ultracompact layouts and and the smallest bill of materials (BOM). A PMBusTM interface is available for monitoring and control in systems that use advanced CPUs, ASICs and FPGAs. Block diagram 12 V Key features Input voltage range 4.5-21 V Output current 1-35 A 1.8 V + CPU/ASIC/FPGA/DSP POL IR38XXX I/O + I/O Key benefits Integrated controller, driver, MOSFETs for small footprint Operating temperature POL IR38XXX Core + High-efficiency MOSFETs range of -40 to 125C 0.9 V and thermally enhanced packages for operation without heat sinks PMBusTM 1.5 V POL IR38XXX Memory + DC-DC IPOL portfolio Digital interface IPOL Analog IPOL IC PMBusTM, telemetry, margin, faults, SVID PVID Digital control/configuration, telemetry and diagnostic Part number Max. current [A] Package size [mm] Max. Vin Max. fsw Performace" voltage-mode PWM Ultralow jitter and noise, high accuracy and low ripple Distinctive features IR38064MTRPBF 35 5x7 21 V 1500 KHz PMBusTM IR38063M 25 5x7 21 V 1500 KHz IR38062M 15 5x7 21 V 1500 KHz IR38060M 6 5x6 16 V 1500 KHz IR38163M 30 5x7 16 V 1500 KHz OptiMOSTM 5, SVID + PMBusTM IR38165M 30 5x7 16 V 1500 KHz OptiMOSTM 5, SVID IR38363M 15 5x7 16 V 1500 KHz OptiMOSTM 5, SVID + PMBusTM IR38365M 15 5x7 16 V 1500 KHz OptiMOSTM 5, SVID IR38263M 30 5x7 16 V 1500 KHz OptiMOSTM 5, PVID + PMBusTM IR38265M 30 5x7 16 V 1500 KHz OptiMOSTM 5, PVID IR38164M 30 5x7 16 V 1500 KHz OptiMOSTM 5, SVID + PMBusTM, enhanced Imon IRPS5401M 4+4+2 +2+0.5 7x7 14 V 1500 KHz 5 output PMIC, PMBusTM Part number Max. current [A] Package size [mm] Max. Vin Max. fsw IR3883MTRPBF 3 3x3 14 V 800 KHz IR3888MTRPBF 25 5x6 17 V 2000 KHz IR3887MTRPBF * 30 4x5 17 V 2000 KHz IR3889MTRPBF 5x6 17 V 2000 KHz 30 Distinctive features Constant-on-time www.infineon.com/dataprocessing *Coming soon 36 For more details on the product, click on the part number. SMPS - laptop adapters 20-300 V MOSFETs SMPS Right-fit portfolio for competitive design of laptop adapters WBG semiconductors 500-950 V MOSFETs Manufacturing slimmer and lighter adapters requires ICs that enable high efficiency with good electromagnetic interference (EMI) performance and low standby power. There is also a need for cost-effective MOSFETs in small packages that feature good EMI and excellent thermal performance. Infineon offers a wide range of products specifically designed for adapters including high-voltage MOSFETs and control ICs for PFC and PWM stages, as well as low-voltage MOSFETs for synchronous rectification. With these products, Infineon supports the trend towards a significantly higher efficiency level, especially in partial load conditions, as well as the miniaturization of the adapter. Discrete IGBTs Extremely versatile are the CoolMOSTM P7 SJ MOSFET series and the latest body-diode performance-enhanced CoolMOSTM PFD7 series which combine high efficiency and optimized cost with the ease of use. Infineon developed a family of packages, characterized by having a short lead, IPAK short lead with ISO-standoff and wide creepage that enable our customers' low-cost and reliable manufacturing, specifically for adapters. High power density at low manufacturing cost can be achieved by using Infineon's SOT-223 cost-effective package and ThinPAK 5x6 and 8x8 high-density SMD packages which enable SMT manufacturing while maintaining very good thermal performances. For synchronous rectification, Infineon's OptiMOSTM PD logic-level power MOSFET series offer extremely low on-state resistance and low capacitances. Vout Rectification Switch DC Multiple and often clunky chargers and adapters for phones, tablets, and laptops pose a nuisance for many users due to the additional weight and added space. That created a need and a trend towards higher power density and consequently smaller devices. Today, flyback power conversion topology is typically used in such systems and the form factor is limited by the efficiency achievable at 90 VAC input voltage and full load. The highest-power-density systems available today reach ~12 W/in3 (for 65 W maximum output power). Infineon's CoolGaNTM e-mode HEMTs enable a breakthrough with respect to power density for adapter and charger systems enabling ~20 W/in3 power density systems (for 65 W maximum output power). This advantage can be realized by implementing Infineon's CoolGaNTM in a half-bridge topology that allows simultaneous increase of switching frequency and efficiency. Gate driver ICs SR and protocol control Microcontrollers Primary-side PWM control Type-C connector Infineon's 20 W/in3 adapter (cased) 24 W/in3 (uncased) with 65 W output power capability (LxWxH: 74.2 mm x 36.5 mm x 16.5 mm) XENSIVTM sensors Main stage Intelligent switches and input ICs Vin Power ICs The new control ICs such as the digital-based XDPTM controller enable forced-frequency-resonant zero-voltageswitching (FFR ZVS) operation, ideal in high-power-density adapter designs and supporting USB-PD requirements. AC Applications Laptop adapter Packages www.infineon.com/smps For more details on the product, click on the part number. 37 Recommended products Functional block Product category Topology Product family Flyback converter High voltage MOSFETs and HEMTs Flyback 600 V/700 V/800 V CoolMOSTM P7 SJ MOSFETs ACF, FMCI 600 V CoolMOSTM PFD7 SJ MOSFETs PFC Main stage Flyback (ACF, FFR, etc.) CoolGaNTM 600 V e-mode HEMTs Low voltage MOSFETs Flyback/auxiliary synchronous rectification OptiMOSTM 100-150V Control ICs QR flyback IC ICE2QS03G, ICE5QSAG FFR flyback IC XDPS21071 High voltage MOSFETs, DCM PFC HEMTs, and diodes and up to 2 kV ESD protection Reduced gate charge for enhanced light load efficiency Lower hysteresis loss Highest efficiency Highest power density Low conduction losses and reduced overshoot Logic level can support low voltage gate drive to achieve high efficiency 600 V CoolMOSTM P7 SJ MOSFETs DCM/CCM PFC CoolGaNTM 600 V e-mode HEMTs Boost diode DCM/PFC 650 V Rapid 1 diodes Control ICs DCM PFC ICs TDA4863G, IRS2505LTRPBF High voltage MOSFETs and HEMTs HB LLC 600 V CoolMOSTM P7 SJ MOSFETs CoolGaNTM 600 V e-mode HEMTs Synchronous rectification Benefits Fast switching speed for improved efficiency and thermals Reduced gate charge for enhanced light load efficiency Optimized gate-to-source voltage (VGS) threshold for lower turn-off losses Robustness and reliability with integrated robust fast body diode Low voltage MOSFETs Synchronous rectification OptiMOSTM PD 100-150V Control ICs Synchronous rectification IR1161LTRPBF High efficiency and low standby power High power density and digital control Suitable for USB-PD design Fast switching speed for improved efficiency Reduced gate charge for enhanced light load efficiency Optimized gate-to-source voltage (VGS) threshold for lower turn-off losses Highest efficiency contribution via less parasitic parameter Space saving with SMD smaller package Low conduction losses Simple external circuitry High PFC and low THD Fast switching speed for improved efficiency and thermals Reduced gate charge for enhanced light load efficiency Optimized gate-to-source voltage (VGS) threshold for lower turn-off losses Highest efficiency Highest power density Low conduction losses, reduced overshoot Adapter-oriented synchronous rectification MOSFETs High efficiency Simple external circuitry www.infineon.com/smps For more details on the product, click on the part number. 38 SMPS - PC power supply 20-300 V MOSFETs SMPS Applications PC power supply More efficient PC power supply 500-950 V MOSFETs The PC power market is divided into high-end gaming PC and better cost-performance sectors to achieve a better price/performance for desktop SMPS. The PC OEMs are implementing the desktop SMPS by removing the AUX power block to save the cost of having a flyback circuit. WBG semiconductors Due to new structure of the CPU and GPU, more and more higher peak power is needed ( 1.5 to 2 times higher than normal power). In addition to the needed CCM PFC, Infineon 600 V CoolMOSTM P7 and 40 V / 60 V OptiMOSTM offer the best price/performance and reliability to meet the design requirements, as well as to achieve the highest efficiency enabled by semiconductors available in the market. Discrete IGBTs For those CPU and GPU power hungry gaming PCs, the ICE3PCS0xG CCM PFC IC provides high efficiency over the whole load range and low count of external components, in addition, the ICE3PCS0xG CCM PFC IC offers fast output dynamic response during load jump. In additions to PGFC IC, Infineon's LLC ICs ICE1HS01G/ICE2HS01G support customers to minimize the external component count. PFC-PWM with AUX and ICs Vout Vbus Main stage Rectification DC Intelligent switches and input ICs PFC Power ICs Vin AC Recommended products Product category Topology Technology PFC/main stage High voltage MOSFETs CrCM/DCM PFC 600V CoolMOSTM P7 600V CoolMOSTM P6 Benefits Best thermal performance Rugged body diode ESD enhancement for production line Wide RDS(on) portfolio including both THD and SMD packages Fast switching speed for improved efficiency and thermals Low gate charge for enhanced light-load efficiency and low Gate driver ICs Functional block power consumption at no load condition DCM PFC 650V Rapid 1 CCM PFC 650V Rapid 2 Control ICs CCM PFC ICs ICE3PCS0xG Main stage Control ICs HB LLC ICs 650V-ICE1HS01G-1/ ICE2HS01G Synchronous rectification Medium voltage diodes HB LLC + center-tap OptiMOSTM 40V OptiMOSTM 60V Microcontrollers Boost diodes Optimized cost/performance and low thermals Layout tolerance and low thermals XENSIVTM sensors 500V CoolMOSTM CE Optimized VGS threshold for low turn-off losses Optimized cost/performance Lower transition losses versus standard MOSFET Low conduction losses Low reverse-recovery losses and PFC switch turn-on losses High PFC and low THD High efficiency and low EMI Packages www.infineon.com/smps For more details on the product, click on the part number. 39 Server power supply SMPS - server power supply SMPS Highly efficient server power supply The trend in the field of data center and enterprise servers is to deliver more power per rack. Meanwhile, the rising cost of energy and environmental concerns make SMPS-efficiency optimization a key requirement across the entire load range for server and data center designs. This challenging task is combined with the requirement for higher power and higher power, higher power density and cost-effectiveness. In the PFC stage and generally in hard-switching topologies used in server applications, Infineon recommends its 600 V CoolMOSTM C7 and G7 families offering the lowest FOM RDS(on) *QG and RDS(on) *Eoss. These MOSFET series provide the lowest switching losses, which is necessary in fast-switching-frequency operations in high-end server SMPS. With Infineon's C7 and G7 series, the efficiency is optimized already from a very light-load operation. 600 V CoolMOSTM C7 and G7 products are used with Infineon's industry-benchmark non-isolated 2EDN752x gate driver IC family. Available in compact SMD packages such as ThinPAK, DDPAK and TOLL, these SJ MOSFETs offer benefits in space usage and power density. Complementary to the 600 V CoolMOSTM C7 in high efficiency PFC is the CoolSiCTM Schottky diodes. The 600 V CoolMOSTM P7 family offers a good compromise between price and performance. This is valuable in both PFC and HV DC-DC stages where low QG and turn-off losses are important benefits, especially in case of high-switching-frequency operation and high light-load efficiency requirements. As high power (2-6 kW and above) require ultrahigh efficiency (96-98 percent peak) and high power density, Infineon's CoolGaNTM 600 V e-mode HEMTs family with totem-pole PFC controls deliver the highest efficiency and power density in the world. Using the 600 V CoolMOSTM S7 devices with active bridge circuit fulfills the Titanium(R) requirement at the lowest cost. Operating expenses (OPEX) and capital expenditures (CAPEX) are both reduced through simplified topologies and the power density in the server PSU is doubled. In applications with low output voltage and high output current, further efficiency improvements are enabled by the continuous reduction of on-resistance. This can be achieved by using Infineon's low-voltage OptiMOSTM MOSFET series in the synchronous rectification stage. Infineon's low-voltage products are complemented by StrongIRFETTM devices that are optimized for lower switching frequencies and highest system robustness. PFC-PWM with AUX and ICs Control and housekeeping Vin AC Vout Vbus PFC Main stage Rectification DC Vaux Auxiliary power DC www.infineon.com/smps For more details on the product, click on the part number. 40 Applications 20-300 V MOSFETs 500-950 V MOSFETs WBG semiconductors Discrete IGBTs Recommended products Product category Topology Product family PFC High voltage MOSFETs CCM/interleaved PFC; TTF 600 V/650 V CoolMOSTM C7 650 V CoolMOSTM G7 600 V CoolMOSTM S7 High voltage GaN Totem-pole PFC CoolGaNTM 600 V SiC diodes CCM/interleaved PFC CoolSiCTM Schottky diode 650 V G5 Main stage Control ICs CCM PFC ICs ICE3PCS0xG High voltage MOSFETs ITTF 600 V CoolMOSTM C7/P6 Benefits Best FOM RDS(on) *QG and RDS(on) *Eoss Lowest RDS(on) per package Low dependency of switching losses form Rg,ext Enable the highest efficiency and highest power density Low FOM VF *QG Power ICs Functional block Ease of use Fast switching speed for improved efficiency and thermals Low gate charge for enhanced light load efficiency and low commutation Low voltage MOSFETs Auxiliary power supply Control ICs LLC, phase shift full-bridge below 1 kW 600 V CoolMOSTM CFD7, 650 V CoolMOSTM CFD2 Low turn-off losses Low Qoss Low QG Fast and rugged body diode Optimized low QG and soft commutation behavior to reach ZVS PS FB, LLC, TTF TRENCHSTOPTM IGBT 650 V F5 Highest reliability for 650 V VDS Improved ruggedness and high efficiency in low inductance HB LLC ICs ICE1HS01G-1 ICE2HS01G HB LLC and center tap OptiMOSTM 40 V ITTF OptiMOSTM 60 V ZVS PS FB and center tap OptiMOSTM 80 V QR/FF flyback CoolSETTM 800 V - ICE2QRxx80(Z)(G) ICE3xRxx80J(Z)(G) 700 V ICE5QRxx70A(Z)(G) 800 V ICE5QRxx80A(Z)(G) Housekeeping Microcontrollers - XMC1xxx Conversion Microcontrollers - XMC4xxx PFC, PWM/resonant converter, synchronous rectification Gate driver ICs - EiceDRIVERTM 1EDix - EiceDRIVERTM 2EDNx designs High efficiency and low EMI High efficiency over whole load range, layout tolerance High efficiency, low thermals, low VDS overshoot High efficiency over whole load range, low VDS overshoot and oscillations Low standby power, high efficiency and robustness An integrated 700 V/800 V superjunction power MOSFET with avalanche capability Burst mode entry/exit to optimize standby power at different low load conditions Flexibility, HR PWM, digital communication Arm(R)-based standard MCU family and wide family Flexibility, HR PWM and digital communication 100 ns typical propagation delay time Functional isolation Separate source 8 V UVLO option -10 V input robustness Output robust against reverse current Gate driver ICs highest effciency Microcontrollers Sychronous rectification 600 V CoolMOSTM P7, CFD7 XENSIVTM sensors Control ICs LLC, half-bridge below 1 kW Intelligent switches and input ICs power consumption at no load condition Optimized VGS threshold for lower turn-off losses Rugged body diode which prevents device failure during hard Packages www.infineon.com/smps For more details on the product, click on the part number. 41 Telecom power supply SMPS - telecom power supply SMPS Full system solution for telecom power supply The ever increasing data consumption, coupled with new levels of virtualization and complexity of the 5G telecom infrastructure, is bringing its demanding requirements into the telecom power arena. The outstanding improvements made in telecom SMPS performance in the past decade have been primarily brought by the dramatic reduction of the on resistance achieved in high voltage MOSFETs, using the revolutionary superjunction principle. This principle was introduced by Infineon at the end of the nineties with the CoolMOSTM series. To achieve the current demanding, flat energy efficiency targets, it has been increasingly popular to employ synchronous rectification utilizing the unique performance of medium-voltage OptiMOSTM power MOSFETs. OptiMOSTMpower MOSFET family, which has gained terrific popularity in DC-DC brick solutions, coupled with gatedriver ICs and microcontrollers efficiently powers the BBUs, RRUs and AAUs of the macro and the small cells. Infineon's wide bandgap technologies, such as CoolGaNTM 600 V (gallium-nitride-based) and CoolSiCTM 650 V (siliconcarbide-based) for primary side and upcoming CoolGaNTM 100V/200V * for synchronous rectification, complement the wide portfolio of silicon-based switches, enabling highest electrical conversion efficiency and robustness at attractive system costs. Infineon's EiceDRIVERTM gate driver IC family perfectly matches the CoolGaNTM and CoolSiCTM products. Analog and digital control ICs Vin AC Vbulk PFC AC-DC rectifier Synchronous rectification DC-DC main stage Vout Or-ing DC Vaux AUX DC Isolated DC-DC DC Power distribution Hot swap Primary side PWM Non-isolated POL niPOL, buck Synchronous rectification Load Load Battery protection Analog and digital control ICs www.infineon.com/smps * in development 42 For more details on the product, click on the part number. Synchronous rectification Auxiliary power supply Housekeeping Conversion Isolated DC-DC *For more information on the product, contact our product support Applications 20-300 V MOSFETs 500-950 V MOSFETs WBG semiconductors Packages www.infineon.com/smps Discrete IGBTs Benefits Best FOM RDS(on) *QG and RDS(on) *Eoss Lowest RDS(on) per package Low dependency of switching losses form Rg,ext 600V CoolMOSTM P7 Low turn-off losses Low Qoss Low QG TRENCHSTOPTM 5 IGBT 650 V H5 Best trade-off between switching and conduction losses TRENCHSTOPTM 5 IGBT 650 V S5 Low gate charge QG High current density High voltage GaN CCM totem pole CoolGaNTM 600 V Switching at high frequencies (> Si) Enables high power density SiC diodes CCM/interleaved PFC CoolSiCTM Schottky diode Low FOM VF *QC Dual-boost PFC 650 V G6 Control ICs CCM PFC ICs 800V-ICE3PCS0xG High PFC and low THD Gate driver ICs Totem-pole PFC EiceDRIVERTM 1EDF5673F Low driving impedance (on-resistance 0.85 source, 0.35 sink) and 1EDF5673K Input-output propagation delay accuracy: 5 ns Functional and reinforced isolation available GaN Totem-pole PFC Integrated bootstrap diode Half-bridge: EiceDRIVERTM gate driver ICs 2ED2106S06F, 2EDL23N06PJ, Low level-shift loss Excellent ruggedness against negative transient voltages on VS pin 2ED2182S06F Interleaved PFC Low side: EiceDRIVERTM OCP, fault and enable function in DSO-8/SOT23-6 2ED4427N01F *, 1ED44176N01F, 2ED - 10 A, dual low side driver 1ED44175N01B High voltage TTF, ITTF 600V CoolMOSTM C7/P7 Fast-switching speed for improved efficiency and thermals MOSFETs Low gate charge for enhanced light load efficiency Optimized VGS threshold for lower turn-off losses Rugged body diode which prevents device failure during hard commutation HB/FB LLC 600V CoolMOSTM P7 Low turn-off losses Low Qoss Low QG HB/FB LLC, 600V CoolMOSTM CFD7 Best-in-class Qrr and trr level ZVS PSFB Significantly reduced QG Improved efficiency over previous CoolMOSTM fast-body-diode series Gate driver ICs HB LLC, ZVS Half-bridge: EiceDRIVERTM Integrated bootstrap diode phase-shift 2ED2106S06F, 2ED2182S06F, Low level-shift loss full-bridge 2EDL23N06PJ Excellent ruggedness against negative transient voltages on VS pin High side: 1EDI60N12AF, Isolated gate driver, up to 10 A, 100 ns propagation delay 1ED3122MU12H *, 1ED020I12-F2 Miller clamp and DESAT protection, UL certified Control ICs HB LLC ICE1HS01G-1, ICE2HS01G High efficiency and low EMI GaN LLC, ZVS phase-shift EiceDRIVERTM 1EDS5663H Low driving impedance (on-resistance 0.85 source, 0.35 sink) gate driver ICs full-bridge Input-output propagation delay accuracy: +/- 5 ns Functional and reinforced isolation available GaN e-mode LLC, ZVS phase-shift CoolGaNTM 600 V Enables the highest efficiency and highest power density HEMTs full-bridge Low voltage Synchronous OptiMOSTM 80-200V Industry's lowest FOM (RDS(on) *QG) leading to high efficiency at good price/ MOSFETs rectification MOSFET performance Low voltage overshoots enabling easy design-in Industry's lowest RDS(on) Highest system efficiency and power density Outstanding quality and reliability Reduces the need for a snubber circuit Gate driver ICs Synchronous Half-bridge: EiceDRIVERTM Integrated bootstrap diode rectification IRS2010S *, 2ED2182S06F, Low level-shift loss 2EDL23N06PJ Excellent ruggedness against negative transient voltages on VS pin Low side: EiceDRIVERTM OCP, fault and enable function in SOT23-6 2ED4427N01F, IRS4427S, 2ED - 10 A, dual low-side driver, DSO-8 with power pad 1ED44175N01B th Control ICs 5 generation QR/FF QR 800 V - ICE5QRxx80Ax Quasi-resonant-switching operation for high efficiency and low EMI signature flyback CoolSETTM FF 800 V - ICE5xRxx80AG Fixed-frequency-switching operation for ease of design - 100 KHz and 125 KHz Fast and robust start-up with cascode configuration Robust protection with adjustable line input overvoltage protection, VCC and CS pin short-to-ground protection Optimized light-load efficiency with selectable burst mode entry/exit profile Frequency reduction for mid- and light-load condition to reduce switching losses and increase efficiency Direct feedback and regulation with integrated error amplifier for non-isolated output High power delivery of up to 42 W with 800 V CoolSETTM in heatsink-free SMD package Microcontrollers XMC1xxx Flexibility, HR PWM, digital communication Arm(R)-based standard MCU family and wide family Microcontrollers XMC4xxx Flexibility, HR PWM, digital communication Arm(R)-based standard MCU family and wide family Microcontrollers XDPP1100 Optimized for 48 V telecom isolated conversion Highly flexible digital core State-of-the-art dedicated AFE State-machine based fast loop control Pre-programmed peripherals in ROM Negligible internal power consumption Industry smallest digital power controller Power ICs Product family 600V/650V CoolMOSTM C7 Intelligent switches and input ICs DC-DC main stage Product category Topology High voltage CCM/interleaved MOSFETs Dual-boost PFC Gate driver ICs Functional block PFC Microcontrollers Recommended products XENSIVTM sensors Telecom power supply For more details on the product, click on the part number. 43 Recommended products Functional block PFC, PWM/ resonant converter, synchronous rectification Product category Topology Gate driver ICs Single-channel non-isolated Product family EiceDRIVERTM 1EDN751x / 1EDN851x Single-channel non-isolated EiceDRIVERTM 1EDN7550 / 1EDN8550 Dual-channel non-isolated EiceDRIVERTM 2EDN75xx / 2EDN85xx Dual-channel junction isolated EiceDRIVERTM 2EDL811x / 2EDL801x Single-channel isolated EiceDRIVERTM 1EDi Compact Dual-channel isolated EiceDRIVERTM 2EDFx Or-ing Battery protection Isolated DC-DC Low voltage MOSFETs Low voltage MOSFETs Low voltage MOSFETs Dual-channel isolated EiceDRIVERTM 2EDSx Or-ing MOSFET OptiMOSTM 60-200 V MOSFET OptiMOSTM 60-150V Primary-side PWM MOSFET OptiMOSTM 60-200V StrongIRFETTM 60-200V Small signal MOSFETs 60-200 V OptiMOSTM 40-100V StrongIRFETTM 40-100V OptiMOSTM 25-30V StrongIRFETTM 25-30V OptiMOSTM Power MOSFET 60 V/100 V/150 V Synchronousrectification MOSFET Or-ing MOSFET Active snubber Benefits 4 V and 8 V UVLO option 8 A sink and 4 A source driver capability 19 nS propagation delay precision for fast MOSFET and GaN switching (-)10 V input robustness 4 V and 8V UVLO option 8 A sink and 4 A source driver capability True differential inputs for ground shift robustness ( CMR up to +/-150 V ) 4 V and 8 V UVLO option 5 A Source and Sink driver capability 17 nS propagation delay precision for fast Mosfet and GaN switching (-)10 V input robustness 2 A/3 A/4 A source ( high and low side ) and 6 A sink ( low side ) and 5 A sink ( high side ) driver capability 2 control input version: independent and differential ( shoot-through protection with -8 V/ +15 V GND shift robustness ) 120 V on-chip bootstrap diode Support operating frequency up to 1 MHz 100 ns typical propagation delay time Functional isolation 1.2 kV separate source and sync outputs 35 ns typical propagation delay time Functional isolation 1.5 kVCMTI > 150 V/ns 35 ns typical propagation delay time Reinforced (safe) isolation 6 kV CMTI > 150 V/ns Industry's lowest FOM (RDS(on) *QG) leading to high efficiency at good price/performance Low-voltage overshoots enabling easy design-in Industry's lowest RDS(on) Highest system efficiency and power density Outstanding quality and reliability Reduces the need for a snubber circuit www.infineon.com/smps For more details on the product, click on the part number. 44 Applications 20-300 V MOSFETs 500-950 V MOSFETs WBG semiconductors Discrete IGBTs Power ICs Intelligent switches and input ICs Gate driver ICs Wide bandgap semiconductors Microcontrollers A new era in power electronics Interested? Learn more at: www.infineon.com/wbg Packages XENSIVTM sensors From operating expense and capital expenditure reduction, through higher power density enabling smaller and lighter designs, to overall system cost reduction, the benefits are compelling. For more details on the product, click on the part number. 45 Advanced system solutions for industrial applications Smart building Power over Ethernet (PoE) LED lighting Power and gardening tools Battery formation Energy storage systems Solar UPS SMPS - embedded power supply SMPS - industrial SMPS For more details on the product, click on the part number. 46 Packages For more details on the product, click on the part number. 47 XENSIVTM sensors Microcontrollers Gate driver ICs Intelligent switches and input ICs Power ICs Discrete IGBTs WBG semiconductors 500-950 V MOSFETs 20-300 V MOSFETs Applications Smart building Smart building Make connected buildings smart with Infineon's full-spectrum portfolio With the rise of IoT and big data in building automation, commercial buildings are now on the verge of becoming smart. Thanks to a myriad of smart devices placed inside a building, intelligent buildings can collect and process a variety of data and take data-based decisions to optimize their operations. This does not only result in significant savings in energy costs but also increases the overall comfort for people inside the building. There are several steps to reach a fully integrated smart building. Across all smart building domains, manufacturers and integrators alike are struggling to climb the ladder of smartification by slowly adding more and more functionalities to smart building devices. A starting point can be first-level data collection thanks to accurate sensors, combined with increased energy efficiency. The goal is to eventually reach a level of smartness in which advanced building analytics can be conducted so that the building reacts in an intuitive way to its tenants. At the same time, the different domains of a building should be integrated to increase the use of the collected data. Infineon provides the right solutions for smart buildings as well as the system expertise and the partnership ecosystem needed to make buildings smart. Levels of intelligence in smart building Level of intelligence Entry level of integration: Connectivity to building management system platform. Next level of integration: Comprehensive command & control over several domains Intelligent lighting solutions powered and connected through Power over Ethernet (PoE) to collect data from connected sensors and gain more insights Extensive level of integration: Extensive command & control over all domains Triggered fire alarm activates lighting and door systems to adjust themselves in order to guide people outside in most effective and efficient manner Entering employee triggers access control to inform all domains to adjust to employee's personal preferences Domains of a building Lighting Access control Heating, ventilation air, conditioning (HVAC) Security and surveillance Shutter Valves and pipes Information & communications technology (ICT) Public address system Building management system www.infineon.com/smartbuilding For more details on the product, click on the part number. 48 Applications 20-300 V MOSFETs 500-950 V MOSFETs WBG semiconductors Discrete IGBTs Intelligent switches and input ICs Power ICs Infineon offers a broad portfolio of products to transform ordinary buildings into smart buildings, ranging from sensors and power management ICs to microcontrollers and security ICs. Best in class XENSIVTM sensor portfolio enabling accurate data collection in a building environment Leading MOSFETs, drivers and other power semiconductor solutions for power-efficient devices Microcontrollers for data processing and analyses at the edge Security ICs, developed with proven expertise, for strong protection of IoT devices against security threats Microcontrollers Control unit, gateway, safety control application, edge node Connectivity and RF 5G backhaul enablement, wireless connectivity, Ethernet, DALI Power semiconductors Power supply, power conversion, motor control, LED driver Hardware security Trusted platform module, access control, secure elements Microcontrollers Voice user interface, predictive maintenance, position sensing, presence detection, authentication XENSIVTM sensors Sensors Gate driver ICs Additionally, Infineon has a long-standing expertise in common building automation domains, such as lighting and HVAC. Packages www.infineon.com/smartbuilding For more details on the product, click on the part number. 49 Power over Ethernet (PoE) Power over Ethernet (PoE) Design reliable and power efficient PoE power supplies Power over Ethernet (PoE) has been around for years, but it is only with the new standard IEEE 802.3bt that the maximum power that can be delivered via a twisted pair Ethernet cable has been significantly increased. Power sourcing equipment (PSE) now provides up to 100 W per port whereas powered devices (PD) will have up to71 W available. The adoption of this new PoE standard also depends largely on the capability of being able to increase the power density on the PSE side while maintaining the same form factor. Infineon has a long-standing expertise in switched mode power supply (SMPS) designs and offers a highly reliable, rugged and efficient high-quality MOSFET portfolio for your PoE PSE and PD designs. Powered devices Powered devices (PD) include devices powered by PoE such as wireless access points, 5G small-cell radio units, IP cameras, conference systems, thin clients or public address systems. DC-DC SMPS designs need to be power efficient to maximize the available power for the PD itself with the simultaneous increase of power density. Moreover, PDs need to function reliably in the field even under potentially rough conditions for a long time. Main power supply for power devices Power sourcing equipment Power sourcing equipment (PSE) is any equipment that is able to provide and source power on the twisted pair Ethernet cable, such as PoE switches, PoE extenders and PoE injectors. PSE needs to be highly reliable to prevent device failure and ensure uninterruptible operations of connected power devices. With IEEE 802.3bt PoE, the power demand for PoE switches significantly increases with highest efficiency over broad-load condition. For example, to fully enable a switch with six 802.3bt compliant PoE ports, up to 600 W of available PoE power budget is required. This will make modifications in AC-DC SMPS designs necessary to fulfill these requirements. Main power supply for Power Sourcing Equipment PoE port AC-DC rectifier www.infineon.com/poe For more details on the product, click on the part number. 50 Product family 600 V/650 V CoolMOSTM C7 600 V CoolMOSTM P7 Control ICs DCM, CrCM, CCM IRS2505L, ICE3PCS0xG, TDA4863G High voltage GaN GaN driver ICs CCM totem pole CCM totem pole CoolGaNTM 600 V 1EDF5673Fx/1EDS5663H EiceDRIVERTM DCM, CrCM, CCM DCM, CrCM, CCM Flyback (ACF), HB LLC, FB LLC, ITTF, ZVS CoolSiCTM Schottky diode 650 V G5/G6 650 V Rapid 1/2 diodes 600 V CoolMOSTM P7/C7/CFD7 650 V TRENCHSTOPTM F5 Low and medium voltage MOSFETs Isolated DC-DC primary-side PWM OptiMOSTM 60 V-200 V StrongIRFETTM 60 V-200 V Small signal MOSFETs 60 V-200 V Gate driver ICs - SiC schottky diode Power silicon diode DC-DC main stage High voltage MOSFETs Control ICs High voltage GaN GaN driver ICs EiceDRIVERTM 1EDNx/1EDi/2EDN7x/ 2EDLx/ 2EDFx/2EDSx HB LLC ICE2HS01G PWM-QF ICE5QSAG / ICE5QSBG PWM-FF ICE5ASAG / ICE5GSAG Flyback (ACF), HB LLC, CoolGaNTM 600 V FB LLC, ZVS EiceDRIVERTM 1EDF5673Fx/1EDS5663H Benefits Best FOM RDS(on) *QG and RDS(on) *Eoss Lowest RDS(on) per package Lowest dependency of switching losses from Rg,ext Low turn-off losses, low Qoss, and low QG Simple external circuitry High PFC and low THD Highest efficiency and highest power density Low driving impedance (on-resistance 0.85 source, 0.35 sink) Input-output propagation delay accuracy: +/- 5 ns Functional and reinforced isolation available Low FOM VF *QC Low conduction losses Best FOM RDS(on) *QG and RDS(on) *Eoss Lowest RDS(on) per package Lowest dependency of switching losses from Rg,ext Low turn-off losses, low Qoss, and low QG 500-950 V MOSFETs Topology DCM, CrCM, CCM, WBG semiconductors Product category High voltage MOSFETs Industry's lowest RDS(on) Highest system efficiency and power density Outstanding quality and reliability Reduces the need for a snubber circuit Broadest portfolio in terms of isolation, channels, and protection High efficiency and low EMI Discrete IGBTs Functional block PFC 20-300 V MOSFETs Recommended product portfolio for power sourcing equipment Applications Power over Ethernet Highest efficiency and highest power density Low driving impedance (on-resistance 0.85 source, 0.35 sink) Input-output propagation delay accuracy: +/- 5 ns Functional and reinforced isolation available IDP2308, IDP2303A 600 V CoolMOSTM P7 Rectification Low and medium voltage MOSFETs Synchronous rectification OptiMOSTM 100 V-150 V OptiMOSTM 40 V-120 V StrongIRFETTM 40 V-100 V Gate driver ICs - Control ICs Synchronous rectification EiceDRIVERTM 1EDNx/1EDi/2EDN7x/ 2EDLx/2EDFx/2EDSx IR1161L IR11688S Low and medium voltage MOSFETs AC-DC integrated power stage Or-ing MOSFETs OptiMOSTM 25 V-200 V Fixed frequency (FF) Quasi resonant (QR) CoolSETTM ICE5xR CoolSETTM ICE5QR Or-ing Auxiliary power supply Analog and digital 32-bit XMCTM industrial control IC microcontroller based on Arm(R) Cortex(R)-M Port MOSFET Medium voltage MOSFETs - Recommended products powered device 32-bit XMC1000 32-bit XMC4000 IR MOSFETTM 100 V OptiMOSTM 100 V Low BOM, high efficiency, and low standby power Low turn-off losses, low Qoss, and low QG Fast-switching speed for improved efficiency and thermals Industry's lowest RDS(on) Highest system efficiency and power density Outstanding quality and reliability Reduces the need for a snubber circuit Broadest portfolio in terms of isolation, channels, and Power ICs Boost PFC, HB LLC HB LLC protection High efficiency Simple external circuitry Intelligent switches and input ICs PFC control ICs High voltage MOSFETs Industry's lowest FOM (RDS(on) *QG) Highest system efficiency and power density Quasi-resonant switching operation for high efficiency and low EMI signature Fixed frequency switching operation for ease of design Flexibility, HR PWM, digital communication Arm(R) based standard MCU family and wide family Gate driver ICs PFC-main stage combo Widest SOA Outstanding quality and reliability Lowest RDS(on) Recommended product portfolio for powered devices DC-DC switching stage AC-DC backup SMPS Topology Active bridge rectifier Synchronous rectification Control ICs Synchronous rectification Flyback (ACF) Medium voltage MOSFETs High voltage MOSFETs AC-DC integrated power stage Flyback (ACF) Product family OptiMOSTM 100 V-150 V IR MOSFETTM 100 V OptiMOSTM 25 V-100 V OptiMOSTM 40 V IR MOSFETTM 20 V-100 V IR1161L& IR11688S OptiMOSTM 100 V-150 V 600 V to 950 V CoolMOSTM P7 Fixed frequency (FF) CoolSETTM ICE5xR Quasi resonant (QR) CoolSETTM ICE5QR Benefits Industry's lowest RDS(on) Highest system efficiency and power density Industry's lowest RDS(on) Highest system efficiency and power density Outstanding quality and reliability High efficiency Simple external circuitry Low conduction losses, reduced overshoot Logic level switching Fast-switching speed for improved efficiency and thermals Reduced gate charge for enhanced light load efficiency Optimized gate-to-source voltage (VGS) threshold for lower turn-off losses Quasi-resonant switching operation for high efficiency and low EMI signatur Fixed frequency switching operation for ease of design Microcontrollers Product category Medium voltage MOSFETs Low and medium voltage MOSFETs XENSIVTM sensors Functional block Active bridge rectifier Rectification Packages www.infineon.com/poe For more details on the product, click on the part number. 51 LED lighting LED lighting Solutions for cost sensitive applications as well as for smart lighting At Infineon, we focus on supplying tailored products for LED drivers, LED strips, horticultural, and smart lighting. Our broad portfolio of tailored products and solutions for LED lighting comprises LED driver ICs, MOSFETs, and microcontrollers suited for LED drivers as well sensors and dedicated ICs for secure communication. In addition to offering products of proven quality, a competent global lighting team supports our lighting customers in designing LED lighting products and systems in collaboration with our channel partners. Key trends and challenges in LED lighting and our offering: Human-centric lighting (HCL) - The lowest cost implementation of tunable white with single-stage flyback constant voltage and smart linear regulators with advanced headroom control ensuring high efficiency - BCR601 Configuration of output current and some further parameters - Our NFC controller allows the configuration of the output current without the need of an additional microcontroller - Our XDPL lighting IC family allows, besides output current, also adjustment of other features like protection, dimming curves, etc. Cost reduction combined with efficiency increase - Integration of resonance inductor for PFC + resonant topology enables highest efficiency at low cost. Integration is enabled by the coreless transformer technology that enables high switching frequencies LED drivers Combo IC AC-line input PFC stage LED module Main stage Sensors hub Dimmer 0-10 V dimming interface Hardware-based security MCU communication intellegent control Wired/wireless communication www.infineon.com/lighting For more details on the product, click on the part number. 52 Applications 20-300 V MOSFETs 500-950 V MOSFETs WBG semiconductors Discrete IGBTs Recommended LED driver products Functional block Product type Product family MOSFET technology PFC stage PFC IRS2505 CoolMOSTM P7 Voltage class 600/700/800/950 V 1) Main stage PFC + LCC (constant current) PFC + LLC (constant current) ICL5102 2) CoolMOSTM P7 (up to 600 m) 600 V/650 V CoolMOSTM P7 800 V/950 V CoolMOSTM P7 800 V/950 V PFC/flyback (single-stage constant voltage) XDPL8218 CoolMOSTM P7 800 V/950 V Secondary buck (single-channel) Secondary buck (multichannel) ILD6150 / ILD8150 Integrated 60 V/80 V Secondary linear BCR601 Small signal MOSFETs 75 V/100 V Synchronous rectification Synchronous rectification controller IR1161 / IR11688 OptiMOSTM 100 V/150 V/200 V Dimming 0-10 V dimming interface IC - Buck / linear solutions CDM10 V - CDM10 VD - - NFC NFC controller NLM0010 / NLM0011 * - - Hardware based security OPTIGATM OPTIGATM Trust - - Microcontroller XMCTM microcontroller XMC1100 - - Sensors XENSIVTM radar sensor IC BGT24LTR11 - - Intelligent switches and input ICs XDPL8220 / XDPL8221 XDPL8105 Gate driver ICs PFC + flyback (dual stage) PFC/flyback (single-stage constant voltage) 2) Power ICs CoolMOSTM CE (above to 600 m) 600 V 3) LED driver with constant voltage output and linear/switch mode LED driver ICs PFC stage Main stage Synchronous rectification Linear LED driver IC Microcontrollers AC-line input Functional block Topology IC product family MOSFET technology Lowest cost LED driver IC Linear BCR400W series Integrated Low voltage drop LED driver IC BCR430 / BCR431 * * Robust LED driver IC BCR40xU / BCR42xU XENSIVTM sensors Linear LED driver IC product portfolio For additional portfolio of lighting ICs, take a look at pages 242-257. 1) 700 V, 800 V and 950 V CoolMOSTM P7 are optimized for PFC and flyback topologies. 600 V CoolMOSTM P7 is suitable for hard as well as soft switching topologies (flyback, PFC and LLC) 2) PFC and resonant combo controllers 3) PFC and flyback combo controllers *Contains besides current configuration also Constant Lumen Output (CLO) feature * *For more information on the product, contact our product support Packages www.infineon.com/lighting For more details on the product, click on the part number. 53 Power and gardening tools Power and gardening tools Battery-powered home and professional applications Infineon is bringing reliability and safety to consumer projects. Millions of households worldwide rely on power tools to complete daily tasks or creative projects around the home. Consumers want robust, reliable and portable power tools that are easy-to-use with low price and long battery life as key selection options. Battery-powered tools must also be equipped with diagnostic and safety features to ensure confidence with high quality. Infineon's broad portfolio offers best-fit, innovative solutions for all power tools applications. We help you meet each consumer need and reduce your overall costs. Also, our wireless-charging reference designs deliver high performance and are easily optimized in our DAVETM development platform. Configure your BOM and exceed expectations with Infineon components in your cordless power tool designs. Features and benefits Key features Key benefits Comprehensive portfolio of products and solutions, easy to tailor to design specification Convenient selection of the right fit products thanks to broad portfolio and complete solutions Infineon offers complete solutions for power supplies, chargers and motor drives Extended battery lifetime and product life span Best-in-class MOSFETs e.g. OptiMOSTM and HEXFETTM/StrongIRFETTM extend battery lifetime and reduce chances for control failure Productive capability High reliability of Infineon components Offering LV FETs with SMD packaging improves the productive capability by automatic production, improves reliability and reduces assembly cost Components featuring small form factor and compact design offering highest power density and BOM savings thanks to lowest RDS(on) Overall system size and cost reduction Security, quality, and safety Authentication Short time to market Trustworthy hardware-based security Highest quality standards and a safety-certified development process Proven track record and outstanding partner network for embedded security OPTIGATM Trust enables authentication of components connected to the system (e.g., battery pack recognition to avoid second-party batteries etc.) Evaluation and demonstration boards for fast prototyping Available simulations, documentation, and system support to reduce development time and cost www.infineon.com/powertools For more details on the product, click on the part number. 54 Applications 20-300 V MOSFETs 500-950 V MOSFETs WBG semiconductors Discrete IGBTs Application block diagram example: cordless power tools Battery 18-36 V Power ICs DC-DC Gate driver User interface USB, serial COM M Hall sensors Intelligent switches and input ICs 3-phase inverter XMC1000 microcontroller Current sensing MOSFET temperature sensing Infineon product offering Gate driver ICs Motor temperature sensing Position sensing Home and professional applications Supply voltage 10.8-56 V OptiMOSTM and HEXFETTM/StrongIRFETTM power MOSFETs Voltage Package SuperSO8, PQFN 3x3, DirectFETTM S/M/L-Can, TOLL, TO-220, TO-247, DPAK, DPAK, DPAK 7-pin CoolMOSTM P7 SJ MOSFET * Voltage 600-700 V EiceDRIVERTM 1EDN/2EDN/6EDL04N02PR, 6ED003L02- F2, 2EDL05N06PF, 2ED2304S06F, IRS2005S/M, IRS2007S, IRS2008S, IRS2301 *, IRS21867, IRS2304 Integrated: IFX9201SG/ BTN8982 IPM - CIPOSTM Nano IRSM005-800MH, IRSM005-301MH Authentication IC, security OPTIGATM Trust B XMCTM microcontrollers iMotionTM ePower XMC1300, XMC4400/XMC4500, iMOTIONTM IRMCK099M ePower: TLE987X (BLDC) Microcontroller and driver supply: linear voltage and DC-DC switching regulators IFX1763/IFX54441/IFX54211/IFX30081/IFX90121/IFX91041 CAN transceivers IFX1050, IFX1051 XENSIVTM sensors Hall switches (TLE496X *), Angle sensor (TLI5012B), 3D magnetic sensor (TLV493D) XENSIVTM sensors Gate driver ICs Microcontrollers 20-100 V *For more information on the product, contact our product support Packages www.infineon.com/powertools For more details on the product, click on the part number. 55 Battery formation Battery formation Solutions that make battery formation equipment more accurate and efficient Everyday routine is being increasingly pervaded by a growing number of wireless and battery powered devices - electric vehicles (EVs) among them. This trend further drives a steadily rising demand for the production of batteries with different charging capacities. Consequently, battery manufacturers find themselves confronted with the challenge to increase efficiency throughout their production and meet the required volume. The essential stage every battery needs to undergo in the manufacturing process is battery formation. In it, the newly assembled batteries are initially charged and discharged with high voltage and current accuracy with the aim to activate the battery material. Formation cycling has great impact on battery lifetime, quality and cost, but is currently the bottleneck in the production process as it is expensive and time-consuming. With its comprehensive product portfolio of cost- and efficiency-optimized products Infineon offers full-spectrum power system solutions, and adequately addresses the application requirements of high accuracy, efficiency and power density. Features and benefits Key features Key benefits High voltage and current accuracy (up to 0.01%) during charge and discharge cycles Highly efficient, innovative and cost-attractive solutions leading to overall BOM savings enabling size reduction High power density High power density semiconductors High efficiency Fast time to market due to the complete ecosystem: Simulations Documentation Demonstration boards Optimal thermal management during operation High system reliability due to 24/7 operation cycles Increased lifetime and reliability due to Infineon's quality One-stop-shop portfolio Application diagram Bidirectional AC-DC AC grid Bidirectional DC-DC V_PFC L1 L2 L3 CIN V_Bus COUT Non-isolated Bidirectional DC-DC CIN V_Bat Eice DRIVERTM N Rsense COUT Totem pole PFC boost converter Dual active bridge resonance converter Buck/boost converter Gate driver Auxiliary power supply CoolSETTM 5 Control unit XMCTM microcontroller www.infineon.com/batteryformation For more details on the product, click on the part number. 56 Applications 20-300 V MOSFETs 500-950 V MOSFETs WBG semiconductors Discrete IGBTs Highlight/ recommended product portfolio Bi-directional non-isolated DC-DC 650 V & 1200 V 650 V TO-247 TO-247 TRENCHSTOPTM 6 IGBT 1200 V TO-247 Gate driver 650 or 1200 V EiceDRIVERTM PG-DSO-16 CoolMOSTM MOSFET 600 V and 650 V TO-247, D2PAK CoolSiCTM MOSFET TRENCHSTOPTM 5 IGBT 650 V and 1200 V 650 V TO-247 TO-247 OptiMOSTM MOSFET 60 V - 150 V OptiMOSTM MOSFET 25 V - 60 V Shrink SuperSO8 SuperSO8 TOLL D2PAK Shrink SuperSO8 SuperSO8 TOLL D2PAK Power stage 5x6 OptiMOSTM Power block 25 V and 30 V Gate driver ICs Low-side with truly differential input 1EDNx550 in PG-SOT23-6 Functional level shift 2EDL in QFN package Power ICs CoolSiCTM MOSFET TRENCHSTOPTM 5 IGBT Benefits Best-in-class Qrr and trr level Significantly reduced QG Improved efficiency over previous CoolMOSTM fast body diode series Input needed Best-in-class efficiency, resulting in lower junction and case temperature leading to higher device reliability Higher power density designs Low conduction losses with 1.85 V, VCE(sat) for S6 series Full rated, robust freewheeling diode Integrated bootstrap diode Low level shift loss Excellent ruggedness against negative transient voltages on VS pin Best-in-class Qrr and trr level Significantly reduced QG Improved efficiency over previous CoolMOSTM fast body diode series Combination of high performance, high reliability and ease of use Best-in-class efficiency, resulting in lower junction and case temperature leading to higher device reliability Higher power density designs Lowest RDS(on) Ideal for high switching frequency Increased power density Reduced system cost Less paralleling Intelligent switches and input ICs Product family TO-247 Gate driver ICs Topology 600 V & 650 V Microcontrollers Bi-directional isolated DC-DC Product category CoolMOSTM MOSFET Integrated solution with low side and high side MOSFET Space reduction Minimized loop inductance Higher efficiency Control inputs independent from gate driver GND Fast Miller plateau transition Robust against false MOSFET triggering Increased power density and BOM savings Level-shift high and low side dual channel driver Strong source and sink current capability 120 V on-chip bootstrap diode Fast propagation delay XENSIVTM sensors Functional block Bi-directional AC-DC - PFC Packages www.infineon.com/batteryformation For more details on the product, click on the part number. 57 Energy storage systems Energy storage systems Make energy storage systems the backbone of the new energy era with our semiconductor system solutions Facing diminishing fossil reserves, the world nonetheless needs to manage rising demand for electrical energy while meeting the growing call for urgent climate action. The transition to renewable energies has become inevitable. Energy storage systems are a vital part to successfully manage this transition. Our system solutions help to make energy storage the backbone of the new energy era. Our unique application expertise and comprehensive offering makes us the natural choice to advance energy storage solutions in terms of efficiency, performance, optimal cost, and Energy storage systems are a vital part to successfully manage this transition. Our system solutions help to make energy storage the backbone of the new energy era. Our unique application expertise and comprehensive offering makes us the natural choice to advance energy storage solutions in terms of efficiency, performance, optimal cost, and innovation. Features and benefits Key features Key benefits Eficcient power convertion in DC-DC and AC-DC stage Improvement of system performance with industry leading semiconductor offering such as OptiMOSTM, CoolMOSTM, CoolSiCTM MOSFETs but also best-in-class modules Power dense design Bi- direcitonal power flow Reduction of design efforts and faster time to market Safe operation of Lithium-ion battery Trust in a true partnership during the whole system lifetime Long battery life time Full system provider form power conversion stage (PCS) to the battery management system (BMS) Application diagram BMS Battery Protection Sensing/ Montioring Security DC-DC DC-AC conversion conversion Grid AC load Gate driver Sensing ... Gate driver Sensing ... Gate driver ... Auxiliary power supply XMCTM Microcontroller www.infineon.com/energy-storage-systems For more details on the product, click on the part number. 58 Applications 20-300 V MOSFETs 500-950 V MOSFETs WBG semiconductors Discrete IGBTs Highlight/ recommended product portfolio 10-100 kW 101-250 kW > 0.25 MW 600 V CoolSiCTM Schottky diode G6 TO-220 650 V CoolSiCTM MOSFET TO-247 150 V OptiMOSTM TO-263 600 V CoolMOSTM C7/P7 TO-247 650 V CoolSiCTM MOSFET TO-247 650 V TRENCHSTOPTM 5 H5 TO-247 650 V CoolSiCTM Schottky diode C6 TO-220 1200 V CoolSiCTM MOSFET TO-247 1200 V TRENCHSTOPTM 5/6 or S6 TO-247 150 V OptiMOSTM D2PAK 200 V OptiMOSTM D2PAK 1200 V EasyPACKTM 2B Modules 1700 V PrimePACKTM/ EconoDUALTM Modules 1200 V PrimePACKTM / EconoDUALTM Modules 1700 V PrimePACKTM/ EconoDUALTM Modules EiceDRIVERTM 2EDS PG-DSO-16-NB EiceDRIVERTM 2EDF PG-DSO-16-NB EiceDRIVERTM 1EDN PG-SOT23-6 Gate driver BMS - 40-60 V battery protection 60-100 V Super S08, TOLL TO-220/247, ThinPAK 8x8, TOLL 100 V OptiMOSTM/OptiMOSTM LinearFET TOLL, D2PAK 150 V OptiMOSTM/OptiMOSTM LinearFET TOLL, D2PAK 100-150 V 200-300 V OptiMOSTM/OptiMOSTM LinearFET D2PAK 150-400 V 600 V CoolMOSTM S7 TO-247 High power density and system cost reduction Highest efficiency, enabling increased power density / more Power ICs OptiMOSTM Benefits compact and easier design Improved system efficiency and extremely fast switching Combination of high performance, high reliability and ease of use Intelligent switches and input ICs 150 V 600 V/650 V CoolMOSTM CFD7 / S7 Package High power density and system cost reduction Ease of use and fast design-in Combination of high performance, high reliability and ease of use Benefit increase at high current conditions Higher frequency and increased power density Highest efficiency and increased power density High device reliability and lifetime expectancy Enables and simplifies the setup of 2 life batteries Lower switching voltage enables higher inverter efficiency Enables and simplifies the setup of 2 life batteries Lower switching voltage enables higher inverter efficiency Highest efficiency for reduced cooling effort High power density Easy and most reliable assembly Gate driver ICs < 10 kW Product family Voltage class [VDS max] nd nd Microcontrollers Power conversion systems (PCS) Power/battery voltage Dual-channel functional isolated Dual-channel reinforced (safe) isolated Single-channel non-isolated Highest system efficiency Minimize parallelization of MOSFETs Market leading MOSFETS with lowest RDSon enabling low XENSIVTM sensors Functional block conduction losses Widest SOA area with LinearFETTM Lowest RDS(on) MOSFET Packages www.infineon.com/energy-storage-systems For more details on the product, click on the part number. 59 Solar Solar Solar High efficiency designs for solar power systems Infineon provides a comprehensive portfolio to deliver the best efficiency and reliability for solar applications. Infineon's cutting edge technologies such as CoolMOSTM SJ MOSFETs, HighSpeed3 IGBT and TRENCHSTOPTM 5, CoolSiCTM Schottky diodes, CoolSiCTM MOSFETs, coreless transformer, driver, etc. combined with the rich experience and highest quality ensure the company's leader position in solar applications. The newly added Arm(R) CortexTM-M4 based MCU enables easy and high efficiency design. MOSFETs Optimizer 250-750 W Single and multiple panel micro inverter 250 -1500 W String inverter 1-200 kW OptiMOSTM SuperSO8/DirectFETTM | 60-150 V OptiMOSTM SuperSO8 | DirectFETTM 60-200V OptiMOSTM 150-300 V CoolMOSTM TOLL/D2PAK | 600-800 V CoolMOSTM TO-247-3/TO-247-4 | 600/650 V CoolSiCTM MOSFET TO-247-3/TO-247-4 | 1200 V SiC MOSFETs 650 V TRENCHSTOPTM 5 / 1200 V HighSpeed 3 TO-247-3/TO-247-4/TO-247PLUS | 600 V/650 V/1200 V IGBTs Gate driver ICs Central inverter 500-5000 kW EiceDRIVERTM 2EDi/1EDCompact/SOI/1EDB Easy 1B/2B PrimePACKTM / EconoDUALTM 3 / 62 mm EiceDRIVERTM 2EDi/1EDB/1EDCompact/SOI/1ED-F2/1EDB EiceDRIVERTM 2EDi/1ED Compact/SOI/ ED-F2/X3Compact/1EDB EiceDRIVERTM 1ED Compact/1ED-F2/X3Compact/X3A/X3D/1EDB CoolSiCTM Schottky diodes DPAK/TO-220 | 600 V/1200 V D2PAK | 650 V CoolSiCTM Schottky diodes TO-220/TO-247/TO-247-2/DPAK/D2PAK| 650 V/1200 V SiC diodes BAT165 Schottky diode CoolSETTM 800 V Auxiliary power supply XMC1xxx Arm(R) Cortex(R)-M0 XMC1xxx Arm(R) Cortex(R)-M0 XMC1xxx Arm(R) Cortex(R)-M0 XMC1xxx Arm(R) Cortex(R)-M0 XMC45xx Arm(R) Cortex(R)-M4 XMC45xx Arm(R) Cortex(R)-M4 XMC45xx Arm(R) Cortex(R)-M4 XMC45xx Arm(R) Cortex(R)-M4 Microcontrollers Infineon's products for complete solar system Photovoltaic panels Auxiliary power supply MPP tracker DC-AC DC-DC conversion conversion EiceDRIVERTM Sensing Energy storage (optional) EiceDRIVERTM ... Grid Sensing ... EiceDRIVERTM ... Sensing MCU with ARM(R) Cortex(R)-M4 MPPT calculation PWM generation ADC Battery management www.infineon.com/solar For more details on the product, click on the part number. 60 Buck boost OptiMOSTM MPPT Input voltage Voltage class [VDS max] 48 V 60 V OptiMOSTM 64 V 80 V 125 V Gate driver ICs 80 V 100 V 150 V Gate driver ICs Single channel Dual channel XMC1000 MPPT calculation PWM generation Part number * RDS(on) SuperSO8 BSC012N06NS 1.2 m DirectFETTM BSB028N06NN3 G 2.8 m SuperSO8 2.1 m BSC021N08NS5 DirectFETTM BSB044N08NN3 G 4.4 m SuperSO8 2.7 m BSC027N10NS5 DirectFETTM BSB056N10NN3 G 5.6 m SuperSO8 9.3 m BSC220N20NSFD PG-SOT23-6 1EDN8550 VDSON 2EDL81xx Microcontroller XMC1000 ADC WBG semiconductors Microcontroller power supply Package * 20-300 V MOSFETs Product family 500-950 V MOSFETs ~ DC 80 V (typ.) PV OptiMOSTM DC 20 to 150 V 45 V (typ.) Functional block OptiMOSTM OptiMOSTM Optimizer Applications Solar Discrete IGBTs Microinverter Product family Voltage class [VDS max] Package * Part number * RDS(on) MPPT - Boost stage OptiMOSTM 60 V SuperSO8 BSC028N06NS 2.8 m 80 V BSC026N08NS5 2.6 m 120 V BSC190N12NS3 19.0 m 150 V BSC093N15NS5 9.3 m BSC160N15NS5 16.0 m IDM02G120C5 2.0 A CoolSiCTM Schottky diode 1200 V Gate driver: EiceDRIVERTM DPAK VDSON-8 IDM05G120C5 5.0 A IDM08G120C5 8.0 A Microcontrollers Functional block Gate driver ICs Intelligent switches and input ICs Power ICs Micro inverter can either be used per single (~300 W) PV panel or multiple PV panels (600 - 1500 W) 2EDL81xx Inverter stage CoolMOSTM 600 V 650 V Gate driver: EiceDRIVERTM TO-Leadless IPT60R102G7 102.0 m D2PAK IPB60R145CDF7 * 145.0 m TO-247 IPW60R145CFD7 145.0 m D2PAK IPB65R150CFD 150.0 m TO-247 IPW65R150CFD 150.0 m PG-DSO-16 2EDS8165H XENSIVTM sensors PG-DSO-8-60/PG-TSSOP-8-1 2EDN7524F 2EDS8265H Microcontroller XMC1000, XMC4000 *For more information on the product, contact our product support Packages www.infineon.com/solar For more details on the product, click on the part number. 61 Solar Single-phase string inverter - multilevel topology PV OptiMOSTM 5 PV OptiMOSTM 5 OptiMOSTM 5 OptiMOSTM 5 OptiMOSTM 5 TRENCHSTOPTM 5 SiC diode / Rapid diode PV OptiMOSTM 5 OptiMOSTM 5 Boost OptiMOSTM 5 Multilevel inverter Grid EiceDRIVERTM Sensors EiceDRIVERTM PWM XMC4000 MPPT Microcontroller power supply MPPT calculation PWM generation ADC In multilevel inverter, four high voltage MOSFETs/IGBTs in H-bridge topology are replaced with a higher number of lower voltage MOSFETs. Compared to a conventional H-bridge inverter, a multilevel inverter, composed of lower voltage MOSFETs, offers several advantages: With much lower RDS(on) and switching loss parameters it significantly reduces conduction and switching losses Higher effective output frequency (smaller magnetics) is possible with lower switching losses Improved EMC due to reduced switching voltages Significant reduction in cooling system, size and weight Discrete power devices for multilevel string inverter Functional block Product family Voltage class [VDS max] Package Part number RDS(on) Boost CoolMOSTM 600 V TO-247 IPW60R017C7 17 m TO-247 IPW60R024P7 24 m D2PAK IPB60R045P7 45 m IKW40N65EH5, IKW40N65ES5 40 A IGBT TRENCHSTOPTM 5 650 V TO-247 D2PAK IKB40N65EH5, IKB40N65ES5 40 A CoolSiCTM Schottky diode 650 V TO-247 IDW20G65C5 20 A PG-SOT23-6 1EDN8511B 4A/8A SuperSO8 BSC093N15NS5 9.3 m SuperSO8 BSC110N15NS5 11 m DirectFETTM IRF150DM115 * 11.3 m D2PAK IPB044N15N5 4.4 m D2PAK IPB048N15N5 4.8 m NB-DSO16 2EDF7275F 4A/8A EiceDRIVERTM 1EDN Flying-capacitor-based OptiMOSTM active neutral-point-clamp (NPC) Gate driver ICs EiceDRIVERTM 2EDi Microcontroller XMC4000 150 V www.infineon.com/solar *For more information on the product, contact our product support 62 For more details on the product, click on the part number. 20-300 V MOSFETs Single-phase string inverter H6 topology EiceDRIVERTM CoolMOSTM Grid 400 DC (typ.) PV Sensors EiceDRIVERTM ... Sensors EiceDRIVERTM ... Grid EiceDRIVERTM ... ... PWM MPPT calculation Microcontroller power supply PWM XMC4000 MPPT XMC4000 MPPT PWM generation MPPT calculation Microcontroller power supply ADC WBG semiconductors PV CoolSiCTM Schottky diode PV CoolMOSTM/ TRENCHSTOPTM CoolMOSTM < 600 DC (typ.) CoolMOSTM/TRENCHSTOPTM CoolSiCTM Schottky diode PV Inverter Boost Circuit Breaking 500-950 V MOSFETs Inverter Boost CoolMOSTM/TRENCHSTOPTM H4 topology PWM generation ADC Three-phase string inverter Inverter Boost Applications Solar Phase C PV Phase A 650 V TRENCHSTOPTM 5 1200 V CoolSiCTM MOSFET Discrete IGBTs <1000 V (typ.) Phase B 1200 V HighSpeed 3 / CoolSiCTM MOSFET 1200 V HighSpeed 3/ CoolSiCTM MOSFET PV 1200 V CoolSiCTM Schottky diode 3~ Grid Grid Sensors EiceDRIVERTM EiceDRIVERTM ... ... PWM MPPT calculation PWM generation Power ICs Microcontroller power supply XMC4000 MPPT ADC Discrete power devices for string inverter Inverter IGBT TRENCHSTOPTM 5 S5/H5 Diode Si MOSFET CoolSiCTM diode CoolMOSTM C7 CoolMOSTM S7 650 V 650 V 600 V CoolMOSTM CFD 7 600 V 600 V 650 V Gate driver ICs IGBT SiC MOSFET IGBT SiC MOSFET Gate driver ICs Microcontroller 650 V 1200 V 650 V Package Part number RDS(on) Ampere TO-247-3 IPW60R037P7 37 m - TO-247-4 IPZA60R037P7 37 m - TO-247-4 TO-247-3 TO-247-3 TO-247-3 TO-247-4 TO-247 TO-247-3 TO-Leadless IMZA65R027M1H IMW65R048M1H IMW120R045M1 IKW40N65ES5, IKW40N65EH5 IKZ50N65ES5, IKZ50N65EH5 IDW20G65C5 IPW65R65C7 * IPT60R022S7 IPT60R040S7 IPW60R018CFD7 IPW60R031CFD7 IMZA65R027M1H IMW65R048M1H IMW120R045M1 IKZ50N65ES5, IKZ50N65EH5 IKW40N65ES5, IKW40N65EH5 * 27 m 48 m 45 m 65 m 22 m 40 m 18 31 27 m 48 m 45 m - 40 A 50 A 20 A 50 A 40 A 30 m 45 m 60 m 30 m 45 m 60 m 40 A 75 A 40 A 75 A - TO-247-3 TO-247-3 CoolSiCTM MOSFET TO-247-4 TO-247-3 1200 V TO-247-3 TRENCHSTOPTM 5 650 V TO-247-4 S5/H5 TO-247-3 EiceDRIVERTM 1ED Compact, EiceDRIVERTM 2EDN Family HighSpeed 3 1200 V TO-247-3 TO-247PLUS-3 CoolSiCTM MOSFET 1200 V TO-247-3/-4 IKW40N120H3 IKQ75N120CH3 IMW120R030M1H, IMZ120R030M1H IMW120R045M1, IMZ120R045M1 IMW120R060M1H, IMZ120R060M1H HighSpeed 3 1200 V TO-247-3 IKW40N120H3 TO-247PLUS-3 IKQ750N120CH3 * CoolSiCTM MOSFET 1200 V TO-247-3/-4 IMW120R030M1H, IMZ120R030M1H IMW120R045M1, IMZ120R045M1 IMW120R060M1H, IMZ120R060M1H EiceDRIVERTM 1ED Compact, EiceDRIVERTM 2EDN family, EiceDRIVERTM 1EDB XMC4000 Intelligent switches and input ICs 600 V CoolSiCTM MOSFET IGBT MPPT - Boost stage Voltage SiC MOSFET SiC MOSFET Three phase Product technology CoolMOSTM P7 Gate driver ICs Inverter Product category Si MOSFET Microcontrollers Functional block MPPT - Boost stage XENSIVTM sensors Inverter type Single phase *For more information on the product, contact our product support Packages www.infineon.com/solar For more details on the product, click on the part number. 63 UPS Uninterruptible power supply Uninterruptible power supply (UPS) Attractive solutions for highest efficiency and power density Today's uninterruptible power supply systems introduce a wide range of challenges. Overcoming them requires an increase in output power, energy efficiency and power density. We offer complete system-level solutions and high quality products for diverse uninterruptible power supply applications. Equipped with our semiconductors, UPS applications can achieve best-possible power-conversion efficiency and cutting-edge power density. The benefits are cost reduction and fewer passive components - regardless of the topology used. Our solutions and products for UPS applications fulfill the latest market requirements. This includes the trend of modularization of UPS brick units due to scalable power demand from data centers, as well as the topology shift from two-level to three-level to achieve higher efficiency. Our products are suitable for any kind of uninterruptible power supplies in telecom, data center, server or industrial automation environments. Offline UPS MOSFETs OptiMOSTM and StrongIRFETTM 20-300 V CoolMOSTM SJ MOSFETs 500-950 V CoolSiCTM Schottky diode SiC diodes TRENCHSTOPTM IGBT6 TRENCHSTOPTM 5 H5 IGBTs Power module and stack Driver ICs EasyPACKTM EiceDRIVERTM 1EDi EiceDRIVERTM 2EDi EiceDRIVERTM 1ED Compact CoolSETTM 650-800 V Auxiliary power supply Microcontrollers Online UPS XMC1300 series www.infineon.com/ups For more details on the product, click on the part number. 64 20-300 V MOSFETs Offline UPS Bidirectional UPS power stage Load Grid 500-950 V MOSFETs Sensing Bidirectional charger / inverter Full-bridge bidirectional power stage WBG semiconductors Battery 12 V / 24 V Push-pull bidirectional power stage Battery + Battery + XMC1300 LS gate driver Tap select HB driver HB driver ADC PWM generation Display drive Display drive Grid StrongIRFETTM PWM generation LS gate driver Discrete IGBTs XMC1300 StrongIRFETTM ADC Applications UPS LF transformer Battery LF transformer D2PAK and D2PAK-7 Gate drivers 12 V Push-pull 60 V IRFB7530 IRFB7534 IRFB7540 IRFB7545 IRFP3006 IRFP7530 IRFP7537 IRFS7530 IRFS7530-7P IRS44273 IRS4427 1EDN751x 2EDN851x * Full-bridge 30 V 40 V IRLB3813 IRLB8314 IRLB8743 IRFB7430 (40 V) IRFP7430 IRFS7430 (40 V) IRFS7430-7P (40 V) IRS211X * IRS2186 2EDL811X 1EDN7550B Push-pull 75 V 100 V IRFB3077 IRFB3207 IRFB7730 IRFB7734 IRFP7718 IRFS7430 IRFS7734 IRF3610S (100 V) IRFS4010 (100 V) IRS44273 IRS4427 1EDN851X 2EDN852X Full-bridge 40 V 60 V IRFB7430 IRFB7434 IRFB7545 (60 V) IRF60B217 (60 V) IRFP7530 IRFP3006 IRFP7537 IRFS7430 IRFS7430-7P IRF7430* IRFS7530-7P IRS211X * IRS2186 2EDL811X 1EDN7550B Push-pull 150 V IRFB4115 IRFB4321 IPP046N15N5 * IRFB4228 IRFB4019 IRFP4568 IRFP4321 IRF150P220 IRF150P221 IRFS4321 IRFS4115 IRB048N15N5* IRFS4615 IRS44273 IRS4427 1EDN851X 2EDN852X Full-bridge 100 V IPP030N10N IRFB4110 IPP086N10N3G IRFB4510 IPP180N10N3G IRFP4468 IRFP4110 IRF100P218 IRF100P219 IRFS3610 * IRF3710S IRF8010S IRFS4510 IRFS4010 IRS211X * IRS2186 2EDL811X 1EDN8550B Push-pull 200 V IPP110N20N3 IRFB4127 IRFB4227 IPP320N20N3 IRFB4320 * IRF200P222 IRFP4668 IRF200P223 IRFP4127 IRFP4227 IPB110N20N3LF IRFS4127 IRFS4227 IRFB117N20NFD * IRF200S234 IRS44273 IRS4427 1EDN851X 2EDN852X Full-bridge 150 V IRFB4321 IPP046N15N5 * IRFP4568 IRF150P220 IRFS4321 IRB048N15N5 * IRS211X * IRS2186 2EDL811X Full-bridge 200 V IPP110N20N3 IRFB4227 IRF200P222 IRFP4668 IPB110N20N3LF IRFS4127 IRS211X * IRS2186 2EDL811X 24 V 48 V 72 V Microcontrollers 12-72 V Intelligent switches and input ICs TO-247 Gate driver ICs MOSFET TO-220 breakdown voltage Microcontrollers Topology XENSIVTM sensors Inverter/charger MOSFETs Battery voltage Power ICs Battery - Grid XMC1300 series *For more information on the product, contact our product support Packages www.infineon.com/ups For more details on the product, click on the part number. 65 UPS Unidirectional Load Grid Sensing AC-DC charger DC-DC step up Inverter + filter Multistage Battery 12 V / 24 V Unidirectional power stage (output stage) Inverter stage DC-DC stage Battery + XMC1300 LS gate driver ADC PWM generation Display drive StrongIRFETTM LS gate driver CoolMOSTM HB driver HF transformer HB driver Battery - Grid Unidirectional DC-DC stage Battery voltage Topology MOSFET breakdown voltage TO-220 TO-247 D2PAK and D2PAK-7 Gate drivers 12 V Push-pull 40 V IRFB7430 IRFB7434 IRFP7718 IRFS7430 IRFS7430-7P IRF7430 * 60 V IRFB7540 IRFB7545 IRF60B217 IRS44273 IRS4427 1EDN851X 2EDN852X 75 V 24 V Push-pull 75 V IRFP7718 IRFB3077 IRFB3207 IRFB7730 IRFB7734 100 V 150 V Microcontrollers IRFS7530-7P IRFB4115 IRFB4321 IPP046N15N5* IRFB4228 IRFB4019 IRFP7718 IRFS7730 IRFS7734 IRF100P218 IRFP4468 IRFS4010 IRF3610S IRF150P220 IRFS4321 IRFS4115 IRB048N15N5 * IRFS4615 XMC1300 series www.infineon.com/ups *For more information on the product, contact our product support 66 For more details on the product, click on the part number. Applications 20-300 V MOSFETs 500-950 V MOSFETs WBG semiconductors Discrete IGBTs Topology MOSFET breakdown voltage TO-220 TO-247 Gate drivers 200 V Full-bridge inverter 120 VAC 300 V IPP410N30N IRFB4137 IRF300P226 IRF300P227 IRFP4868 IRFP4137 IRS211X * IRS2186 400 V Full-bridge inverter 220 VAC 500 V IPP50R280CE IPP50R380CE IPP50R190CE IPW50R190CE IRS211X * IRS2186 TO-247 PG-DIP-7 Microcontrollers Intelligent switches and input ICs Battery voltage Power ICs Unidirectional inverter stage Gate driver ICs XMC1300 series Unidirectional charger Topology MOSFET breakdown voltage TO-220 12-72 V Flyback 650 V CoolSETTM 12-72 V Flyback 800 V CoolMOSTM P7 IPP80R750P7 IPP80R600P7 IPP80R450P7 IPP80R360P7 IPP80R280P7 Integrated, ICE3AS03LJG, ICE3BS03LJG XENSIVTM sensors Microcontrollers ICE3RBR1765JZ ICE3RBR0665JZ Microcontrollers Battery voltage *For more information on the product, contact our product support Packages www.infineon.com/ups For more details on the product, click on the part number. 67 UPS Online UPS Online UPS power stage Grid Active front end or rectifier Inverter Load Battery charger Gate driver + isolation Auxiliary power supply voltage regulation Gate driver + isolation Microcontroller Communication interface Stage Topology Voltage class Technology Rectifier Three-phase 800 V/1600 V EasyBRIDGE, EconoBRIDGETM PFC Boost PFC / Vienna "T-type" 1200 V TRENCHSTOPTM IGBT6 Boost PFC / Vienna rectifier 1200 V CoolSiCTM MOSFET F3L15MR12W2M1_B69 Boost PFC / Vienna "T-type" 650 V TRENCHSTOPTM 5 H5 IKW50N65EH5 IKW75N65EH5 Boost PFC 600 V/1200 V EasyPACKTM Boost PFC 1200 V CoolSiC TM Schottky diode PFC 600 V CoolMOSTM P7 IPP60R060P7 IPB60R060P7 PFC 600 V CoolMOSTM C7 IPP60R040C7 IPB60R040C7 NPC 1 650 V TRENCHSTOPTM 5 H5 IKW50N65EH5 IKW75N65EH5 IKZ50N65EH5 IKZ75N65EH5 NPC 1 650 V TRENCHSTOPTM 5 S5 IKW50N65ES5 IKW75N65ES5 NPC 1 650 V TRENCHSTOPTM HighSpeed3 IGBT Rapid diode FS3L50R07W2H3F_B11 NPC 2 1200 V TRENCHSTOPTM IGBT6 IKW40N120CS6 IKQ75N120CS6 NPC 2 1200 V CoolSiC TM Schottky diode NPC 2 1200 V TRENCHSTOPTM HighSpeed3 IGBT Rapid diode FS3L25R12W2H3_B11 F3L200R12W2H3_B11 F3L200R12W2H3_B47 * NPC 2 650 V TRENCHSTOPTM 5 S5 IKW50N65ES5 IKW75N65ES5 Two-level 1200 V EconoPACKTM , EasyPACKTM FS75R12W2T4_B11 FS200R12KT4R_B11 Two-level 1200 V EconoDUALTM FF600R12ME4_B11 Three-level NPC1 600 V/1200 V EconoPACKTM F3L300R07PE4 Half-bridge 1200 V TRENCHSTOPTM IGBT6 IKW40N120CS6 IKQ75N120CS6 1200 V CoolSiCTM MOSFET FF6MR12W2M1_B11 650 V TRENCHSTOPTM 5 H5 IKW50N65EH5 IKW75N65EH5 Inverter Battery charger Gate driver ICs Single-channel 1200 V EiceDRIVERTM 1ED Compact AUX - 650-800 V CoolSETTM Part number IKW40N120CS6 IKQ75N120CS6 www.infineon.com/ups *For more information on the product, contact our product support 68 For more details on the product, click on the part number. SMPS - embedded power supply 20-300 V MOSFETs SMPS Full system solutions for embedded power supplies 500-950 V MOSFETs Customers who design or manufacture a product that needs embedded intelligence typically want to focus on the system design of their product, be it white goods, a vending machine, an automatic door opener or any other product. They do not want to spend valuable efforts and time in designing the power supply systems. They just want to use them, having a trouble-free, EMI friendly, and reliable power supply. WBG semiconductors Along with a wide range of products, we developed flexible and easy to reuse reference designs with the intention to provide our customers with best fitting solutions tailored for their different needs. Discrete IGBTs Depending on these needs, our customers can select very low-cost power supply reference designs featuring high integration or using a platform approach to reuse the same power designs for different products that need different power supplies. If high efficiency is needed, for example to meet ENERGY STAR label requirements or to improve overall thermal performance, we offer power supply reference designs with the outstanding efficiency levels. Flyback non-AUX Power ICs Our comprehensive reference design offering coupled with application notes help our customers to drastically Vin Vout Vbus improve the efficiency of their power supply by using secondary-side synchronous rectification instead of a rectifier AC Rectification PFC Main stage DC diode. Benefits of synchronous rectification are greater efficiency and improved thermal performance of the power supply. Flyback Vin Vout Flyback Rectification DC Intelligent switches and input ICs AC Applications Embedded power supply Product category Topology Technology Control ICs QR/FF flyback CoolSETTM 700 V/800 V ICE5QRxx70/80A(Z)(G) Flyback Control ICs QR flyback ICE5QSAG High voltage MOSFET Flyback 700 V/800 V CoolMOSTM P7 Benefits Low standby power, high efficiency and Gate driver ICs Functional block Auxiliary power supply robustness High efficiency and low standby power Best price competitive CoolMOSTM family Lower switching losses versus standard MOSFET XENSIVTM sensors Microcontrollers Controlled dV/dt and di/dt for better EMI Packages www.infineon.com/smps For more details on the product, click on the part number. 69 Industrial SMPS SMPS - industrial SMPS Industrial SMPS Reliable and robust Industrial SMPS powers a wide range of devices from industrial automation robots to medical equipment and vending machines. With the expansion of the Internet of Things (IoT) and the adoption of Industry 4.0, the demand for industrial SMPS is on the rise. Industrial switch-mode power supplies (SMPS) are mostly operated in environments such as outdoor without air conditioning, or systems without fans. Such operating conditions make reliability and robustness the key requirements for the industrial SMPS, especially when it comes to high temperature operations, outdoor use, line surges, load jumps, short circuit ,etc. In addition to quality, reliable supply and long-term product availability are also some of the key customer concerns. Industrial SMPS life cycle goes over 10 years and it takes 3 to 5 years to ramp. Hence, not only do customers need a high quality products, but also a stabile and reliable supply over the industrial SMPS lifecycle (10 to 20 years). Infineon offers this with its CoolMOSTM, OptiMOSTM and StrongIRFETTM product families, which thanks to the high robustness and reliable performance have been meeting customer and market requirements for more than 20 years. Infineon's products offer the best price/performance ratio along with highest efficiency and reliability. For new designs, we highlight our CoolMOSTM P7 600 V/800 V/950 V parts, as well as the latest generation of OptiMOSTM 30 V/40 V/60 V/80 V/ 100 V/150 V and 250 V products. For designs with convection-cooled, high power supplies, our CoolMOSTM S7 in active bridge will reduce the power losses to enable the operation without fans. PFC-PWM with AUX and ICs Vin AC Vout Vbus PFC Rectification Main stage Functional block Product category Topology Technology PFC/Main stage High voltage MOSFETs CrCM/DCM PFC 600 V / 800 V / 950 V CoolMOSTM P7 DC Benefits Best thermal performance Rugged body diode ESD enhancement for production line Wide RDS(on) portfolio including both THD and SMD packages 600 V CoolMOSTM P6 Fast-switching speed for improved efficiency and thermals Low gate charge for enhanced light-load efficiency and low power consumption at no load condition Optimized VGS threshold for low turn-off losses 600 V CoolMOSTM S7 Boost diodes DCM PFC 650 V Rapid 1 CCM PFC 650 V Rapid 2 Control ICs CCM PFC ICs ICE3PCS0xG Main stage Control ICs HB LLC ICs 650 V - ICE1HS01G-1/ ICE2HS01G Synchronous rectification Medium voltage diodes HB LLC + center-tap OptiMOSTM 30 V/40 V/60 V/80 V/150 V/250 V PFC Efficiency boost ~1% Lowest RDS(on) in SMD packages Low conduction losses Low reverse recovery losses and PFC switch turn-on losses High PFC and low THD High efficiency and low EMI Optimized cost/performance and low thermals www.infineon.com/smps For more details on the product, click on the part number. 70 Packages For more details on the product, click on the part number. 71 XENSIVTM sensors Microcontrollers Gate driver ICs Intelligent switches and input ICs Power ICs Discrete IGBTs WBG semiconductors 500-950 V MOSFETs 20-300 V MOSFETs Applications Advanced system solutions for transportation and infrastructure Fast EV charging E-mobility Light electric vehicles and forklifts Multicopter For more details on the product, click on the part number. 72 Packages For more details on the product, click on the part number. 73 XENSIVTM sensors Microcontrollers Gate driver ICs Intelligent switches and input ICs Power ICs Discrete IGBTs WBG semiconductors 500-950 V MOSFETs 20-300 V MOSFETs Applications Fast EV charging Fast EV charging Advanced solutions for DC EV charging As e-mobility increasingly becomes part of daily life, there is a growing need for more efficient charging solutions. Fast electric vehicle (EV) charging stations equipped with powerful DC chargers are the answer. DC EV chargers are an attractive choice because they allow much faster charging than the standard AC EV ones that many EV owners have at home. Today, a DC charger with 150 kW can put a 200 km charge on an EV in around 15 minutes. As fast charging and battery technologies continue to evolve and improve in the near future, experts anticipate the charging time to drop even further. As a market leader and the global front-runner in power electronics, Infineon enables you to bring energy-efficient DC EV charger designs to life, with our highly efficient components and in-depth technical support. We cover power ranges from kilowatts to megawatts in our broad portfolio of high-quality power semiconductors, microcontrollers, gate drivers and security, safety, and authentication solutions. Our CoolMOSTM and CoolSiCTM MOSFETs, for example, are ideal in a wide range of DC EV charging designs. Their matchless advantages include high frequency operation, high power density and reduced switching losses, allowing you to reach high levels of efficiency in any battery charging system. Infineon offering and customer benefits Infineon offering Customer benefits CoolMOSTM and CoolSiCTM discrete and power module semiconductor solutions Highly efficient power conversion for reducing system size by up to 50 % and reduced cooling efforts Scalability across various platforms for upgrading system power charger levels on demand EiceDRIVERTM and XMCTM microcontroller Safe drive and ease of control XENSIVTM magnetic current sensor Bidirectional high precision current sensing OPTIGATM Identity protection against fake devices and protection against the manipulation of the data Power supply ICs (LDO, DC-DC) Communication (CAN transceiver) Robust quality and easy to use implementation shorten time to market and guarantee long operation Application diagram AC power in Current sensor DC power to batteries AC-DC including PFC DC-DC stage Current sensor Gate driver and galvanic isolation Microcontroller AURIXTM / XMCTM Internal power supply Communication to car - end user Communication to user Human-machine interface (HMI) Authentication/encryption and communication www.infineon.com/ev-charging For more details on the product, click on the part number. 74 Applications 20-300 V MOSFETs 500-950 V MOSFETs WBG semiconductors Discrete IGBTs Power ICs Infineon's solution recommendation for DC EV charging system blocks Our solutions are designed for harsh environmental conditions and long lifetime as we have an excellent understanding of quality requirements. Take the next step by exploring our product portfolio for DC EV charging systems. Product Additional information 650 V CoolMOSTM C7 IPW65R019C7 650 V, 19 m, TO-247 600 V CoolMOSTM C7 IPW60R017C7 600 V, 17 m, TO-247 600 V CoolMOSTM P7 IPW60R024P7 600 V, 24 m, TO-247 IPW60R037P7 600 V, 37 m, TO-247 IPW60R060P7 600 V, 60 m, TO-247 IKW50N65EH5/IKZ50N65EH5 650 V, 50 A, TO-247-3/4 650 V TRENCHSTOPTM 5 H5 650 V, 75 A, TO-247-3/4 IMW120R045M1/IMZ120R045M1 1200 V, 45 m, TO-247-3/4 1200 V CoolSiCTM Easy modules F3L15MR12W2M1_B69 1200 V, 15 m, Easy 2B, Vienna rectifier phase leg 1200 V CoolSiCTM Schottky diodes generation 5 FS45MR12W1M1_B11 1200 V, 45 m, Easy 1B, six-pack IDW15G120C5B/IDWD15G120C5 1200 V, 15 A, TO-247-3/2 IDW20G120C5B/IDWD20G120C5 1200 V, 20 A, TO-247-3/2 IDW30G120C5B/IDWD30G120C5 1200 V, 30 A, TO-247-3/2 XENSIVTM sensors SiC diodes IKW75N65EH5/IKZ75N65EH5 1200 V CoolSiCTM MOSFETs Gate driver ICs Product family High voltage MOSFET / SiC MOSFET / IGBT Microcontrollers Product category Intelligent switches and input ICs PFC stage (three-phase input) Packages www.infineon.com/ev-charging For more details on the product, click on the part number. 75 Fast EV charging HV DC-DC main stage Product category Product family Product Additional information High voltage MOSFET / SiC MOSFET 600 V CoolMOSTM CFD7 / CSFD IPW60R018CFD7 600 V, 18 m, TO-247 IPW60R024CFD7 600 V, 24 m, TO-247 IPW60R037CSFD 600 V, 37 m, TO-247 IPW60R040CFD7 600 V, 40 m, TO-247 IPW60R055CFD7 600 V, 55 m, TO-247 IPW60R070CFD7 600 V, 70 m, TO-247 600 V CoolMOSTM C7 IPW65R045C7 650 V, 45 m, TO-247 600 V CoolMOSTM P7 IPW60R080P7 600 V, 80 m, TO-247 650 V CoolMOSTM CFD7 IPW65R029CFD7 * Coming soon ,650 V, 29 m, TO-247 SiC Diodes Output rectification diodes IPW65R029CFD7 * Coming soon , 650 V, 29 m, TO-247-4 1200 V CoolSiCTM SiC MOSFET IMW120R045M1/IMZ120R045M1 1200 V, 45 m, TO-247-3/4 1200 V CoolSiCTM Easy module FF6MR12W2M1(P)_B11 * 1200 V, 6 m, Easy 2B, half-bridge FF8MR12W2M1(P)_B11 * 1200 V, 8 m, Easy 2B, half-bridge FF11MR12W1M1_B11 1200 V, 11 m, Easy 1B, half-bridge FF23MR12W1M1(P)_B11 * 1200 V, 23 m, Easy 1B, half-bridge F4-23MR12W1M1(P)_B11 * 1200 V, 23 m, Easy 1B, fourpack 1200 V CoolSiCTM Schottky diode generation 5 650 V CoolSiCTM Schottky diode generation 5 650 V CoolSiCTM Schottky diode generation 6 FS45MR12W1M1_B11 1200 V, 45 m, Easy 1B, sixpack IDW15G120C5B/IDWD15G120C5 1200 V, 15 A, TO-247-3/2 IDW20G120C5B/IDWD20G120C5 1200 V, 20 A, TO-247-3/2 IDW30G120C5B/IDWD30G120C5 1200 V, 30 A, TO-247-3/2 IDW12G65C5 650 V, 12 A, TO-247 IDW16G65C5 650 V, 16 A, TO-247 IDW20G65C5 650 V, 20 A, TO-247 IDW20G65C5B 650 V, 10 A, TO-247 IDW24G65C5B 650 V, 24 A, TO-247 IDW30G65C5 650 V, 30 A, TO-247 IDW32G65C5B 650 V, 32 A, TO-247 IDW40G65C5 650 V, 40 A, TO-247 IDW40G65C5B 650 V, 40 A, TO-247 IDH20G65C6 650 V, 20 A, TO-220 IDH16G65C6 650 V, 16 A, TO-220 real 2-pin IDH12G65C6 650 V, 12 A, TO-220 real 2-pin IDH10G65C6 650 V, 10 A, TO-220 real 2-pin IDH08G65C6 650 V, 8 A, TO-220 real 2-pin IDH06G65C6 650 V, 6 A, TO-220 real 2-pin IDH04G65C6 650 V, 4 A, TO-220 real 2-pin IDDD20G65C6 650 V, 20 A, Double DPAK IDDD16G65C6 650 V, 16 A, Double DPAK IDDD12G65C6* 650 V, 12 A, Double DPAK IDDD10G65C6 650 V, 10 A, Double DPAK IDDD08G65C6 650 V, 8 A, Double DPAK IDDD06G65C6 650 V, 6 A, Double DPAK IDDD04G65C6 650 V, 4 A, Double DPAK (P): Module with pre-applied thermal interface material (TIM) Gate driver and galvanic isolation Product category Product family Product Additional information Gate driver ICs EiceDRIVERTM (non-isolated) 1EDN family, 2EDN family Single-channel/dual-channel, non-isolated low-side gate driver ICs 2ED24427N01F * 10 A dual-channel low-side gate driver with DSO-8 power pad package EiceDRIVERTM level shift gate driver IR2214SS, 2ED2184S06F, 2ED2110S06M* 1200 V / 650 V half-bridge gate driver for IGBTs and MOSFETs with level-shift technology EiceDRIVERTM (galvanic isolation) 2EDF7175F, 2EDF7275F Dual-channel functional isolated (1,5 kV) 2EDS8265H, 2EDS8165H Dual-channel reinforced (safe) isolated (6 kV) 1EDI40I12AF/H, 1EDI60I12AF, 1200 V single-channel, galvanic isolated driver with separate source and 1EDI60I12AH, 1EDC40I12AH, sink outputs to drive CoolMOSTM SJ MOSFETs in floating mode as in Vienna 1EDC60I12AH, 1ED3124MU12H/F* rectifier variants 1EDC20H12AH, 1EDC60H12AH, 1ED020I12-F2, 2ED020I12-F2 1ED3491MU12M* 1200 V, single-channel/dual-channel, galvanic-isolated driver recommended to drive CoolSiCTM MOSFETs and CoolSiCTM EasyPackTM power modules 1EDI30I12MF/H, 1EDC30I12H*, 1EDI10I12MF/H, 1EDC10I12MH 1ED3122MU12H * 1200 V, single-channel, galvanic-isolated driver with integrated Miller clamp to drive TRENCHSTOPTM 5 IGBTs H5 www.infineon.com/ev-charging * For more information on the product, contact our product support 76 For more details on the product, click on the part number. Product family Product XENSIVTM TLI4971-A120T5-E0001 TLI4971-A120T5-U-E0001 Additional information UL certified 500-950 V MOSFETs Product category Magnetic current sensor 20-300 V MOSFETs Current sensor Product category Product family Product Additional information Microcontroller XMCTM XMC1400 family (PFC stage) Arm(R) Cortex(R) M0 based microcontroller XMC4500/XMC4700 (HV DC-DC/PWM stage) Arm(R) Cortex(R) M4F based microcontroller TC26X/TC27X TC36X/TC37X TriCoreTM AURIXTM 32-bit microcontroller HSM (hardware secure module) full EVITA compliance WBG semiconductors Microcontroller AURIXTM Product Additional information ICE5QR0680AG 800 V, 42 W, 710 m, PG-DSO-12 ICE5AR0680AG 800 V, 42 W, 710 m, PG-DSO-12 5th generation PWM controllers and CoolMOSTM P7 ICE5QSAG and IPP80R360P7 800 V, 360 m, TO-220 ICE5QSAG and IPA95R450P7 950 V, 450 m , TO-220 FP CoolMOSTM HV SJ MOSFETs IPN95R1K2P7 950 V, 450 m, SOT-223 DC-DC power conversion IPN80R1K4P7 800 V, 1.4 , SOT-223 IFX30081 50 mA ultralow quiescent current linear voltage regulator with wide input voltage range IFX54211 150 mA LDO in tiny package IFX54441 300 mA low noise LDO IFX25001 400 mA wide input voltage LDO Buck converter IFX91041 1.9 A DC-DC buck converter Safety PMIC for AURIXTM MCU TLF35584 Multichannel power supply IC, optimized for AURIXTM MCU, up to ASIL-D rated Low power LDOs Power ICs Product family CoolSETTM 5 QR/FF flyback Intelligent switches and input ICs Product category Discrete IGBTs Internal power supply AC-DC power conversion Product family Product Additional information OPTIGATM Trust B SLE952500000XTSA1 Assymetric ECC authentication with individual certificate key pair and an extended temperature range of -40 to 110C OPTIGATM Trust TPM SLB9670XQ2.0 * Fully TCG TPM 2.0 standard compliant module with the SPI interface SLC37 SLC37ESA2M0, SLI97CSIFX1M00PE * New class of performance and security cryptocontroller adhering to CC EAL6+ high targeted and EMVCo targeted certifications for payment and eSIM applications Microcontrollers Product category Security Gate driver ICs Authentication and encryption As embedded systems are increasingly becoming targets of attackers, Infineon offers OPTIGATM - a turnkey security solution. Product category Product family Product Additional information CAN transceiver Industrial grade transceiver IFX1050G High speed CAN with 1Mbps, certified to ISO11898-2 IFX1051G * High speed CAN with 2Mbps, certified to ISO11898-2 Automotive transceiver TLE9250SJ Automotive grade high speed CAN FD transceiver with 5 Mbps, certified to ISO11898-5 TLE9250LE Automotive grade high speed CAN FD transceiver with 5 Mbps, certified to ISO1189- 5 in tiny SMD package XENSIVTM sensors Communication Packages www.infineon.com/ev-charging * For more information on the product, contact our product support Applications E-mobility For more details on the product, click on the part number. 77 E-mobility E-mobility Best solutions for battery chargers, wireless charging and battery management To recharge the battery of an electric or hybrid car, a charger is needed. Chargers can be implemented onboard or off-board the vehicle. Electric energy is transferred to the vehicle by wire or by wireless methods like resonant inductive power transfer. Power units onboard the vehicle require automotive-grade components, while the wider product selection of industrial-grade components can be used for off-board units. Onboard chargers In cars with onboard chargers the batteries can be recharged from any standard AC power outlet, which provides maximum power of 6.6 kW best case (single-phase 230 V/32 A) or 22 kW (three-phase input grid). System designers face the challenge of supporting the varied voltage and current levels while increasing the power density. When it comes to on-board charging, the key success factors involve efficiency and a high power density for a small form factor. The longterm trend is moving towards bi-directional charging, where the charger also feeds power from the car to the smart grid. Off-board chargers The off-board chargers ensure the proper energy flow from AC grid and HV battery charging electronics. While AC charger delivers only limited power of up to 22kW and thus longer charging time, DC charger will enable much faster battery fill with higher power levels. Infineon provides various solutions that reduce power losses, maximizing power savings and boosting performance. Ultrafast chargers with power ratings of 50 kW and above are usually build with power stack of 20-30 kW for modularity. Often, bidirectional operation of power conversion stage is a requirement for enabling the charger for V2G operation. AC-DC battery chargers: functional blocks AC input PFC stage PFC output L1 PFC DC-DC converter RFI filter PFC DC-DC converter RFI filter PFC Driver ICs L2 Power (grid) RFI filter Battery management Input Protection EMI Filter Driver ICs L3 N DC-DC converter Gate driver ICs L1 L2 L3 32-bit microcontroller TC23xL TC26xD XMC1000* XMC4000* Auxiliary power supply Control + display I/V measurement Single-phase charger Driver ICs Microcontroller Isolated current sensor Microcontroller power supply Isolation Transceiver Input Protection and EMI Filter High Voltage Battery Driver ICs Driver ICs Microcontroller Driver ICs Driver PWM stage - secondary rectification Driver Full-bridge converter Driver PFC stage output High voltage battery Microcontroller Digital Isolation Digital isolation Input Protection and EMI Filter Driver Driver www.infineon.com/emobility *For off-board chargers only 78 Driver High Voltage Battery Microcontroller Microcontroller Digital Isolation For more details on the product, click on the part number. Infineon's comprehensive portfolio of semiconductors (sensors, microcontrollers, power semiconductors, etc.) lends itself perfectly to designs of compact units for onboard, off-board, and wireless charging. Our products in this sector support high switching frequencies at lowest possible on-state resistance (RDS(on)) to enable compact and efficient designs: MOSFETs such as CoolMOSTM, IGBTs such as TRENCHSTOPTM 5 and SiC Schottky diodes, such as 650V CoolSiCTM diode. In addition, integrated MOSFET and IGBT drivers, controller ICs for active CCM PFC high-performance microcontroller solutions and highly accurate current sensors complete our product portfolio. For more information about off-board chargers, refer to page 74 - Fast EV charging. Automotive products for on-board units Product family IPx65RxxxCFDA CoolMOSTM 650 V Description 650 V MOSFET with integrated fast body diode AIKW50N, AIKW40N, AIGW40 TRENCHSTOPTM 5 AUTO IGBT IGBT discrete dedicated to automotive applications AIMW120Rx * CoolSiCTM 1200 V Automotive 1200 V discrete SiC MOSFET AUIRS2191S, AUIRS2113S Level shifter Automotive high and low side driver 2ED020I12FA Automotive EiceDRIVERTM Dual-channel isolated driver for 650 V/1200 V IGBTs and MOSFETs TC23xL,TC26xD AURIXTM microcontroller 32-bit lockstep microcontroller TLF35584 OPTIREGTM PMIC ISO26262 - system-supply optimized for AURIXTM TLE9250 , TLE9251 CAN FD transceiver High-speed automotive CAN transceiver with 5Mbps TLE9461, TLE9471 Automotive system basic chips High integrated solution for microcontroller supply and communication TLS810, TLS850, TLS105 OPTIREGTM Linear Automotive linear voltage regulators TLI4971 XENSIVTM current sensor Coreless magnetic current sensors Description TRENCHSTOPTM 5 IGBTs 650 V ultrafast/fast IGBT with Rapid 1 diode IGWxxN65F5/H5, IGZxxN65H5 TRENCHSTOPTM 5 IGBTs 650 V ultrafast/fast IGBT IDWxxG65/120C5(B 3)) CoolSiCTM diodes 650 V/1200 V SiC Schottky diode generation 5 IDWDxxG120C5 CoolSiCTM diodes 1200 V SiC Schottky diode generation 5 TO-247 2-pin IMW/Z120RxxxM1H CoolSiCTM MOSFETs 1200 V SiC MOSFETs IPW65RxxxC7 CoolMOSTM SJ MOSFETs 650 V MOSFET, CoolMOSTM C7 series for hard switching topologies IPW60RxxxP7 CoolMOSTM SJ MOSFETs 600 V MOSFET, CoolMOSTM P7 series for hard switching topologies IPW65RxxxCFD CoolMOSTM SJ MOSFETs 650 V MOSFET, CoolMOSTM CFD2 series for soft switching topologies IPW60RxxxCFD7 CoolMOSTM SJ MOSFETs 600 V MOSFET, CoolMOSTM CFD7 series for soft switching topologies HybridPACKTM1 Power module 1200 V/200 A for fast and ultrafast charging (>10 kW/phase) XMC1000 2), XMC4000 2) XMCTM microcontrollers 32-bit Arm(R) Cortex(R) M0/M4F microcontrollers, up to 125C ambient temperature (XMC4000) IFX1763, IFX54441, IFX54211 Linear voltage regulators Linear voltage regulator family with output current capability of 500 mA/300 mA/150 mA respectively IFX1050, IFX1021 * Transceivers High-speed CAN transceiver/LIN transceiver 600 V functional isolation, 50 A Power ICs IKWxxN65F5/H5/EH5, IKZxxN65EH5 TLI4970 Current sensor 2EDNxxxxF/R EiceDRIVERTM 2EDN gate driver ICs Dual-channel, low-side, non-isolated 1EDxxxI12AF/MF, 1ED31xxMU12H EiceDRIVERTM 1ED Compact gate driver 1200 V, single-channel, isolated driver with Miller clamp or separate output 1ED-F2, 2ED-F2, 1ED34x1MU12M EiceDRIVERTM Enhanced 1200 V, single-channel, galvanic isolated driver with DESAT, Miller clamp, Soft-off 2ED24427N01F * EiceDRIVERTM low side gate driver 10 A dual low side gate driver with DSO-8 thermal pad package IR2214SS, 2ED21xxS06F EiceDRIVERTM level shift gate driver 1200 V/650 V half-bridge gate driver for IGBTs and MOSFETs Intelligent switches and input ICs Product family Discrete IGBTs Industrial products for off-board units Part number Applications WBG semiconductors Part number 20-300 V MOSFETs Product portfolio for onboard and off-board charger applications 500-950 V MOSFETs E-mobility Wireless charging ~ - Receiver Resonance loops ~ 85 kHz ~ High voltage switch Battery management Resonance loops Rectifier Road side + + Inverter Microcontrollers + PFC AC-DC High voltage battery XENSIVTM sensors M Power (grid) 50/60 Hz Gate driver ICs Wireless methods for power transfer to charge the batteries of electric vehicles are gaining attention. Several concepts for wireless power transfer systems have been proposed, which in general seek to compensate the significant stray inductances on primary and secondary sides of the magnetic couplers by adaptive resonant methods. At the end of 2013, SAE announced a new standard for inductive charging which defined three power levels at 85 kHz. Infineon's CoolMOS TM CFD7, C7, and P7 series along with TRENCHSTOPTM 5 IGBTs, CoolSiCTM diodes, and EiceDRIVERTM gate driver ICs are perfectly suited for driving inductive power transfer systems on the road side which operate inside the 80 to 90 kHz band. Car side High voltage switch Gate driver ICs Gate driver ICs Microcontroller Microcontroller 1) in development 2) for external chargers 3) B" in product name refers to common-cathode configuration * For more information on the product, contact our product support Packages www.infineon.com/emobility For more details on the product, click on the part number. 79 E-mobility Automotive products for the car side * * Part number Product family Description 1ED020I12FA2 Automotive EiceDRIVERTM Single-channel isolated driver for 650V/1200V IGBTs and MOSFETs 1ED020I12FTA 2ED020I12FA IPx65RxxxCFDA TC23xL, TC26xD TLF35584 1) TLE9250, TLE9251 TLE9461, TLE9471 TLS810, TLS850, TLS105 Automotive EiceDRIVERTM Automotive EiceDRIVERTM CoolMOSTM AURIXTM OPTIREGTM PMIC CAN FD transceiver Automotive system basic chips OPTIREGTM Linear Single-channel isolated driver, two-level turn-off for 650V/1200V IGBTs Dual-channel isolated driver for 650V/1200V IGBTs and MOSFETs 650V MOSFET with integrated fast body diode 32-bit lockstep microcontroller ISO26262 - system-supply optimized for AURIXTM High-speed automotive CAN transceiver with 5 Mbps High integrated solution for microcontroller supply and communication Automotive linear voltage regulators Industrial products for the road side * * Part number Product family Description IPW60R031CFD7 CoolMOSTM CFD7 SJ MOSFET 600 V MOSFET, 31 m, TO-247 IPW60R040C7 CoolMOSTM C7 SJ MOSFET 600 V MOSFET, 40 m, TO-247 IPW60R037P7 CoolMOSTM P7 SJ MOSFET 600 V MOSFET, 37 m, TO-247 IKW40N65F5 TRENCHSTOPTM 5 IGBTs Fast IGBT with Rapid 1 diode, 40 A, TO-247 IGW40N65F5 IDW40G65C5 XMC4000 TRENCHSTOPTM 5 IGBTs CoolSiCTM diode XMCTM microcontroller Fast IGBT, single, 40 A, TO-247 650V SiC Schottky diode generation 5, 40 A, TO-247 2) 32-bit Arm(R) Cortex(R) -M4F microcontrollers, up to 125 C ambient temperature IFX1763, IFX54441 Linear voltage regulators Linear voltage regulator family with output current capability of 500 mA or 300 mA respectively TLI4970 2ED21xxS06F 1EDxxxI12AF/MF, 1ED31xxMU12H Current sensor EiceDRIVERTM SOI gate driver EiceDRIVERTM 1ED Compact gate driver IC 600V functional isolation, 50 A 650 V half-bridge gate driver for IGBTs and MOSFETs 1200 V, single-channel, isolated driver with Miller clamp or separate output Charger concepts without galvanic isolation of the power stages Transformerless designs, without galvanic isolation inside the power stages, are economic and efficient. But enhanced safety measures may be required to operate such designs from standard AC-grid power outlets. Type-B RCD (GFCI) safety switches are needed on the grid side to immediately break the circuit in case an unintended feedback of DC-voltage from the HV-battery into the AC-grid occurs under worst-case failure conditions, but type-B safety switches on the grid side are not standard by today. The main reason why non-isolated designs are currently not accepted for onboard chargers is because the level of safety measures on the grid side of the charging spot is uncertain. However, inside an off-board charger installation with an integrated type-B safety switch, the use of non-isolated concepts may be indicated. To highlight their opportunities, Infineon has investigated non-isolated concepts, built and evaluated laboratory demonstrators of single-phase 3 kW chargers without galvanic isolation inside the power stages. Concept demonstrator 3) of lean and efficient off-board DC-charger without galvanic isolation Input 230V/50 Hz single-phase AC Output 220V-390VDC, max. power 3.3 kW at 350V with 96.2 percent efficiency AC-DC L1 RCD (GFCI) type B Power (grid) ~ N PFC w/o galvanic isolation + DC-DC buck + To EV`s DC charging socket - High voltage switch Gate driver ICs Industrial products for the road side Microcontroller Part number Product family Description ICE3PCS01G Integrated controller For active CCM PFC, DSO 14-pin IPW65R019C7 CoolMOSTM C7 SJ MOSFET 650V MOSFET, 19 m, TO-247 IKW40N65H5 TRENCHSTOPTM 5 IGBT 650 V fast IGBT with Rapid 1 diode, 40 A, TO-247 IKW50N65EH5 TRENCHSTOPTM 5 IGBT 650 V fast IGBT with Rapid 1 diode, 50 A, TO-247 IDW30G65C5 CoolSiCTM diode 650V SiC Schottky diode generation 5, 30 A, TO-247 TLI4970 Current sensor 600V functional isolation, 50 A 1EDxxxI12AF/MF, 1ED31xxMU12H EiceDRIVERTM 1ED Compact gate driver 1200 V, single-channel, isolated driver with Miller clamp or separate output 2ED24427N01F * EiceDRIVERTM low side gate driver 10 A dual low-side gate driver with DSO-8 thermal pad package www.infineon.com/emobility 80 1) In development 2) Automotive version under consideration 3) More detailed information about this demonstrator is available upon request * For more information on the product, contact our product support * * Available in different current ratings For more details on the product, click on the part number. 20-300 V MOSFETs Best solution for battery management 500-950 V MOSFETs An intelligent battery management system (BMS) is necessary to sustain battery performance throughout its entire lifetime - the challenge there is to tune the utilization of each battery cell individually. Passive cell balancing is the default approach where the weakest of the cells sets the limits for battery lifetime and cruising range. Infineon's microcontrollers and sensors, in combination with our power devices, enable active cell balancing while charging and discharging. An active cell balancing system helps to increase the effective cruising range and the battery lifetime by 5 to 10 percent, compared to passive balancing. In this context, highlights are our 8-bit XC886CM microcontroller family for the slave blocks and the new 32-bit AURIXTM microcontroller family for the master block, OptiMOSTM low voltage MOSFETs, automotive CAN transceivers TLE9250, TLE9251, as well as brand new OPTIREGTM PMIC TLF35584 to enable safety level up-to ASIL-D. Product family Description IPx65RxxxCFDA CoolMOSTM CFDA 650 V SJ MOSFET with integrated fast body diode WBG semiconductors Main switch Part number Description TC23xL, TC26xD 32-bit AURIXTM lockstep microcontrollers TLF35584 ISO26262 - system-supply optimized for AURIXTM TLE9250, TLE9251 High-speed automotive CAN transceiver with 5 Mbps TLE9461, TLE9471 High integrated Solution for Microcontroller supply and communication Discrete IGBTs Battery master Part number Applications E-mobility Description XC886CM 8051-compatible 8-bit automotive microcontroller TLF35584 ISO26262 - system-supply optimized for AURIXTM TLE9250, TLE9251 High-speed automotive CAN transceiver with 5 Mbps TLE9461, TLE9471 High integrated Solution for Microcontroller supply and communication IPG20N04S4L OptiMOSTM-T2 power transistor, logic level, dual, 40V/8.2 mW IPD70N03S4L OptiMOSTM-T2 power transistor, logic level, 30V/4.3 mW IPD70N10S3L OptiMOSTM-T2 power transistor, logic level, 100V/11.5 mW Intelligent switches and input ICs Part number Power ICs Battery slave Private CAN 8-bit C XC 886CM 6x IPG20N04S4L-08 IPD70N03S4L IPD70N10S3L TLE7250G TLE6389-2GV Battery master 32-bit microcontroller TC23xL/TC26xD Public CAN Gate driver ICs Battery block slave TLF35584 HS-CAN transceiver TLE7250G Battery block slave + Main switch 650 V CoolMOSTM Microcontrollers 8-bit C XC 886CM 6x IPG20N04S4L-08 IPD70N03S4L IPD70N10S3L TLE7250G 150 V-400 V - TLE6389-2GV 8-bit uC XC 886CM 6x IPG20N04S4L-08 IPD70N03S4L IPD70N10S3L TLE7250G TLE6389-2GV High voltage switch XENSIVTM sensors Battery block slave Gate driver ICs Microcontroller Packages www.infineon.com/emobility For more details on the product, click on the part number. 81 Light electric vehicle and forklift Light electric vehicles and forklift e-Bike, e-Scooter, e-Rickshaw, LSEV, e-forklift Light electric vehicles (LEV) are viable options for daily commute. Started with Asia, now moving towards Europe and Americas, the increasingly wide spread of e-kick scooter, e-bike, e-scooter, e-motorcycle, e-rickshaw, as well as low speed electric vehicles, also referred to as neighborhood EV (NEV) are spotted all around the world. Electrification with lithium batteries gives hardware overhaul to some of the existing designs built with lead-acid batteries. With the state-of-art battery technology, LEV manufacturers are launching premium vehicles requiring technologies that enable longer distance per charge, fast charge in various speed class up to 100 km/hr. On the other hand, electric forklifts (class I, II, and III) lift loads up to 10 tones while maintaining 4.83 kilometers per hour on 20 incline for 2 minutes. The faster the LEV and the higher load a LSEV or forklift has to carry, the stronger the motor and the motor controller has to be. This requires multiple best-in-class, MOSFETs with lowest on-resistance gathering together in parallel to generate sufficient power. Infineon's industrial grade OptiMOSTM and StrongIRFETTM MOSFETs product families consider light electric vehicles mission profile within its qualification process. They provide industry-leading on-resistance as well as robustness against critical conditions (short circuit conditions, hard commutation ruggedness, and instantaneous peak power tolerance). Both product families come with a broad range of voltage classes spreading from 25 V to 300 V with multiple RDS(on) classes to choose from. OptiMOSTM devices are designed for best performance in paralleling operation while StrongIRFETTM devices have great mix between performance and robustness. Infineon offering and customer benefits Infineon offering Customer benefits Lowest on-resistance RDS(on) Highest power density and BOM cost reduction Lowest power consumption during operation Increased battery operating time Track record of reliability and quality Prolonged lifetime Complete portfolio Enabled scalability Complete design support with simulations, documentation and demonstration boards for high end solution available Shortened development cycle Application diagram Safety & security Power management Interface Microcontroller I/O f(x) Driver Sensor M www.infineon.com/lev For more details on the product, click on the part number. 82 Part number IPT007N06N HEXFETTM power MOSFET 60 V BSC039N06NS IRFS3006TRL7PP IRFH7545TRPBF HEXFETTM power MOSFET 75 V IRFB3607PBF OptiMOSTM 5 power MOSFET 80 V IPT029N08N5 IPP052N08N5 IPT015N10N5 IPB017N10N5 IPB042N10N3 IPB048N15N5 IRFP4668PBF 2ED2106S06F 2ED2182S06F 6EDL04N02PR IRS2005/7/8M, IRS2011S 1EDN7550 IFX21004TN TLE4964-1M TLE493DW2B6Ax IMC101T-F064 TLE9877QXW40 XMC1404-F064X0200 IPT015N10N5 IPT020N10N3 SLE 95250 OptiMOSTM 5 power MOSFET 100 V Gate driver ICs Voltage regulator Sensors Motor control IC Microcontrollers Battery management MOSFETs Safety and security Security chip OptiMOSTM 3 power MOSFET 100 V OptiMOSTM 5 power MOSFET 150 V HEXFETTM power MOSFET 200 V EiceDRIVERTM 650 V half-bridge SOI gate driver IC with integrated bootstrap diode EiceDRIVERTM 200 V three-phase SOI driver IC with integrated bootstrap diode EiceDRIVERTM 200 V half-bridge gate driver IC EiceDRIVERTM single-channel gate driver IC Monolithic integrated voltage regulator XENSIVTM integrated Hall effect switch XENSIVTM 3D magnetic sensor iMOTIONTM digital motor controller 3-Phase Bridge Driver IC with Integrated Arm(R) Cortex(R) M3 XMC1400 series OptiMOSTM 5 100 V OptiMOSTM 3 100 V OPTIGATM Trust B 500-950 V MOSFETs Product family OptiMOSTM power MOSFET 60 V WBG semiconductors Product category MOSFETs Discrete IGBTs Functional block Motor control 20-300 V MOSFETs Highlight/ recommended product portfolio - electric bike and electric kick scooter Applications Light electric vehicle and forklift OptiMOSTM 3 power MOSFET 80 V OptiMOSTM 5 power MOSFET 100 V HEXFETTM power MOSFET 100 V IPB019N08N3 G IPT015N10N5 IPB027N10N5 IPP051N15N5 IRFB4110 OptiMOSTM 5 power MOSFET 150 V IPB044N15N5 OptiMOSTM Fast Diode (FD) power MOSFET 200 V OptiMOSTM 3 power MOSFET 200 V StrongIRFETTM power MOSFET 200 V EiceDRIVERTM 1ED Compact 1200 V isolated gate driver IPB156N22NFD IPB107N20N3 G IRF200S234 1EDI20N12AF 1ED3122MU12H * 2ED2106S06F 2ED2182S06F IRS2127S 1EDN7550 2EDS8265H 2EDS8165H IPW60R018CFD7 IKW30N60DTP IKW50N60DTP IFX21004TN V51 TLS115D0EJ TLE4964-1M SAK-XC2365B-40F80LR AB XMC4300-F100K256 IPB044N15N5 IPB059N15N3 * SLE 95250 IRFP4668PBF IRF200P222 6EDL04I06PT Gate driver ICs EiceDRIVERTM 650 V/600 V, half-bridge/high-side EiceDRIVERTM single-channel gate driver IC EiceDRIVERTM reinforced isolated gate driver IC 600V MOSFETs and IGBTs Voltage regulators Sensor Microcontrollers Battery Management MOSFET Safety & Security Air-conditioning Security chip MOSFETs Gate driver IC 600 V CoolMOSTM CFD7 power MOSFET 600 V DuoPack IGBT (TRENCHSTOPTM Performance) with RAPID 1 fast anti-parallel diode 600 V DuoPack IGBT with RAPID 1 fast anti-parallel diode Monolithically integrated w/ dual output: 5 V and 15 V OPTIREGTM Tracker XENSIVTM integrated Hall effect switch XC2000 family XMC4300 OptiMOSTM 5 150 V OptiMOSTM 3 150 V OPTIGATM Trust B HEXFETTM power MOSFET 200 V StrongIRFETTM power MOSFET 200 V 600 V three phase gate driver IC for IGBTs and MOSFETs Intelligent switches and input ICs Part number IPT012N08N5 Gate driver ICs Product family OptiMOSTM 5 power MOSFET 80 V Microcontrollers Product category MOSFETs XENSIVTM sensors Functional block Motor control Power ICs Highlight/ recommended product portfolio - electric scooter, LSEV and forklift * For more information on the product, contact our product support Packages www.infineon.com/lev For more details on the product, click on the part number. 83 Multicopter Multicopter Multicopter Reliable and cost-effective solutions to support future design trends Infineon's comprehensive portfolio of high quality products allows designers to rapidly design, develop, and deploy systems that address the ever more demanding needs of today's customers. We offer a near system solution - everything from XMCTM microcontrollers, to iMOTIONTM motor control ICs, to magnetic sensors and many other cutting-edge technologies - with the exception of one commodity, an IMU (inertial measurement unit) for existing solutions. In the very fast growing multicopter market, energy efficiency and reliability are becoming more important. Camera applications, autonomous flying and sophisticated onboard equipment are pushing the limits of power management and reliability. With increased adoption comes increased regulation and the multicopter itself needs to be capable of being piloted in a safe and well-controlled manner. Being a recognized leader in automotive and industrial power electronic systems, Infineon offers high quality system solutions for the next generation of multicopters and enables customers to achieve a higher degree of innovation and differentiation. Features and benefits Key featurs Development effort and cost reduction Key benefits With no or little experience in motor control, customers can implement the iMOTIONTM motor control IC and take flight Authentication Project development can be reduced up to 30 percent by using reference designs and the DAVETM platform for microcontroller programming Infineon's solutions enable authentication of components connected to the system Ease-of-precision control for flight and data Longer flight times Guaranteed safety and protection of the product, avoiding liability Collision avoidance Through the benefits of multifunction sensors, the user can experience an easy, stable, smooth and accurate control of the multicopter Closed loop control of gimbal motor, sensors enhanced camera stability and data transmission when recording video The highly efficient components and effective flight control can make the multicopter lighter, which results in longer flight time XENSIVTM 24 GHz radar sensors have the capability of detecting the proximity of objects such as trees, buildings, etc. The miniaturized digital barometric air pressure sensors based on capacitive technology guarantee high precision during temperature changes Infineon can provide all the necessary critical semiconductor components for multicopters Altitude stabilization Broader portfolio Fast time-to-market A complete eco-system of simulations, documentation and demoboard solutions enables a faster time-to-market Overview of the main electronic subsystems of a typical multicopter design Power management Authentication LDO Battery management DC-DC Gate driver 3-phase inverter Electronic speed controller M Current sensing IRMCK099 / XMC1300 microcontroller I2C/SPI Authentication & remote control Application processor and wireless Interface e.g. Raspberry PI Zero 24 GHz Radar sensor LTE/GPS Security XMC4000 microcontroller and digital control ICs 2.4/5.0 GHz Wireless Pressure Sensor ESD USB I2C/SPI LED Roll motor control CAN Video camera Silicon microphones M Yaw Motor control Inertial measurement unit (IMU) 3-axis gyroscope 3-axis accelerometer 3-axis magnetometer Gimbal XMC1400 microcontroller Position sensor M Position sensor Pitch motor control M Position sensor www.infineon.com/multicopter For more details on the product, click on the part number. 84 Applications 20-300 V MOSFETs 500-950 V MOSFETs WBG semiconductors Discrete IGBTs Solution tree for multicopters radar sensor: BGT24MR Current sensor: TLI4970 Accessory authentication Security OPTIGATM Trust E SLS 32AIA OPTIGATM Trust P SLJ 52ACA * * OPTIGATM TPM SLB 96XX OPTIGATM Trust SLS 10ERE * * OPTIGATM Trust B SLE 95250 OPTIGATM Trust X SLS 32AIA IFX1117ME IFX54441EJV IFX1763XEJV33 Interface protection diode Joystick 3D magnetic sensor: TLV493D ESD102 series LTE: BGA7H, BGA7M, BGA7L GPS: BGA524N6, BGA824N6 Wi-Fi: BFP842ESD, BFR840L3RHESD, BFR843L3 * *, etc. Microcontroller XMC1300 family iMOTIONTM IRMCK099 BCR450 BCR321U BCR421U MOSFET gate driver IRS2301S 6EDL04N02P IRS23365 PX3517 Charger High voltage MOSFETs 600 V CoolMOSTM P7 * Hall sensor: ePOWER: TLE987x LED driver Intelligent power module Sensor TLI4961, TLV4961 Angle sensor: TLI5012B, TLE5009 Dual n-channel power MOSFETs IR3742 * *, etc. BSC0925ND, etc. IRSM005-800MH IRSM836-084MA Power ICs XENSIVTM pressure IFX90121ELV50 sensor: DPS310 IFX91041EJV33 XENSIVTM 24 GHz IFX91041EJV50 Low noise amplifer(LNA) LDO DC-DC module Low voltage MOSFETs OptiMOSTM 5 series StrongIRFETTM series Gate driver ICs XMC4000 family XMC1000 family AURIXTM Sensor Battery management Stand alone PWM controller Low voltage MOSFETs OptiMOSTM 5 40-80 V in TO-220, SuperSO8 StrongIRFETTM 40-75 V ICE2QS03G Authentication ICs Cell balancing Low voltage MOSFETs OPTIGATM Trust B SLE 95250 OptiMOSTM 30 V in SSO8, S308, DirectFETTM StrongIRFETTM 30 V Microcontrollers Microcontroller ESC Intelligent switches and input ICs Flight control OptiMOSTM 5 in SuperSO8, S3O8, DirectFETTM StrongIRFETTM 40-80 V Microcontrollers XMC1400 family Angle sensor TLI5012B TLE5009 LDO IFX1117ME IFX54441EJV IFX1763XEJV33 CAN transceiver Low voltage MOSFETs HS CAN IFX1050G * * OptiMOSTM 5 25-30 V IFX1050GVIO StrongIRFETTM 25-30 V Dual n-channel power MOSFETs XENSIVTM sensors Gimbal control MOSFET gate driver IRFHM8363TRPBF, etc. IR2101STRPBF, etc. *If the necessary package/RDS(on) combination is not available in the new CoolMOSTM P7 series yet, the previous CoolMOSTM CE and P6 series are the preferred series * *For more information on the product, contact our product suppor Packages www.infineon.com/multicopter For more details on the product, click on the part number. 85 20-300 V MOSFETs 20-300 V MOSFETs 20-300 V MOSFETs N-channel power MOSFETs technology development and product family positioning Guidance for applications and voltage classes Space-saving and high performance packages Discrete and integrated packages OptiMOSTM Source-Down power MOSFETs 25-150 V OptiMOSTM Linear FET OptiMOSTM 6 power MOSFETs 40 V Small signal/small power MOSFETs 250-600 V Product portfolio Nomenclature For more details on the product, click on the part number. 86 Packages For more details on the product, click on the part number. 87 XENSIVTM sensors Microcontrollers Gate driver ICs Intelligent switches and input ICs Power ICs Discrete IGBTs WBG semiconductors 500-950 V MOSFETs 20-300 V MOSFETs Applications OptiMOSTM and StrongIRFETTM OptiMOSTM and StrongIRFETTM 20-300 V N-channel power MOSFETs Infineon's semiconductors are designed to bring greater efficiency, power density and cost-effectiveness. The full range of OptiMOSTM and StrongIRFETTM power MOSFETs enables innovation and performance in applications such as switch mode power supplies (SMPS), battery powered applications, motor control and drives, inverters, and computing. Infineon's highly innovative OptiMOSTM and StrongIRFETTM families consistently meet the highest quality and performance demands in key specifications for power system designs such as on-state resistance (RDS(on)) and figure of merit (FOM). OptiMOSTM power MOSFETs provide best-in-class performance. Features include ultralow RDS(on), as well as low charge for high switching frequency applications. StrongIRFETTM power MOSFETs are designed for drives applications and are ideal for designs with a low switching frequency, as well as those that require a high current carrying capability. Technology development and product family positioning StrongIRFETTM OptiMOSTM Robust and excellent price/performance ratio Optimized for switching frequency < 100 kHz Designed for industrial applications High current carrying capability Rugged silicon Best-in-class technology Optimized for broad switching frequency Designed for high performance applications Industry's best figure of merit High efficiency and power density Active Active and preferred Active Active and preferred (Price/performance optimized) (High performance optimized) (Price/performance optimized) (High performance optimized) OptiMOSTM 3 200/250/300 V IR MOSFET 100-300 V OptiMOSTM 3 80/100/150 V StrongIRFETTM Gen. 1 20-300 V OptiMOSTM 5 80/100/150 V OptiMOSTM 3 75/120 V IR MOSFET 20-300 V OptiMOSTM 6 40 V OptiMOSTM 25/30/40/60 V OptiMOSTM 5 25/30/40/60 V www.infineon.com/powermosfet-12V-300V For more details on the product, click on the part number. 88 Applications 20-300 V MOSFETs 500-950 V MOSFETs WBG semiconductors Discrete IGBTs Power ICs Infineon's power MOSFET 20-300 V product portfolio is divided into active and preferred", referring to the latest technology available offering best-in-class performance, and active", consisting of well-established technologies which complete this broad portfolio. Gate driver ICs Intelligent switches and input ICs OptiMOSTM 6 power MOSFETs 40 V are the newest addition to the OptiMOSTM product family available either in SuperSO8 or PQFN 3.3 x 3.3 packages. This technology is the perfect solution when best-in-class (BiC) products and high efficiency over a wide range of output power are required. For other voltage classes, from 25 V up to 150 V, OptiMOSTM 5 represents the latest generation in the market, offering either best-in-class (BiC) or price/performance solutions. For high frequency applications, the product portfolio is complemented by OptiMOSTM 3 power MOSFETs 40/60 V as standard components. The active and preferred" OptiMOSTM 3 power MOSFETs 75/120 V, as well as 200/250/300 V is the best fit portfolio either in low- or high-frequency applications with a range of products covering from BiC to standard parts. XENSIVTM sensors Microcontrollers StrongIRFETTM Gen. 1 is recommended for 20-300 V applications when the the BiC performance is not essential and the cost is a more significant consideration. Packages www.infineon.com/powermosfet-12V-300V For more details on the product, click on the part number. 89 OptiMOSTM and StrongIRFETTM Guidance for applications and voltage classes OptiMOSTM and StrongIRFETTM portfolio, covering 20 up to 300 V MOSFETs, can address a broad range of needs from low- to high-switching frequencies. The tables below provide a guidance on the recommended OptiMOSTM or StrongIRFETTM products for each major sub-application and voltage class. 20 V to 30 V 40 V 60 V 75 V to 80 V OptiMOSTM StrongIRFETTM OptiMOSTM StrongIRFETTM OptiMOSTM StrongIRFETTM Battery powered Recommended voltage Low power Power tools, Multicopter, Battery, Industrial Drives High power (LEV, LSEV) Solar 100 V 135 V to 150 V 200 V 250 V 300 V Inverters slow switching Online UPS Offline UPS Adapter / Charger PC Power SMPS LCD TV Server AC-DC Telecom OptiMOSTM StrongIRFETTM OptiMOSTM StrongIRFETTM OptiMOSTM StrongIRFETTM OptiMOSTM StrongIRFETTM OptiMOSTM StrongIRFETTM fast switching OptiMOSTM StrongIRFETTM OptiMOSTM StrongIRFETTM OptiMOSTM StrongIRFETTM OptiMOSTM StrongIRFETTM www.infineon.com/powermosfet-12V-300V StrongIRFETTM recommended OptiMOSTM recommended StrongIRFETTM available OptiMOSTM available For more details on the product, click on the part number. 90 TO-220 TO-220 FullPAK D2PAK D2PAK 7-pin TO-Leadless Height [mm] 5.0 4.4 4.5 4.4 4.4 2.3 Outline [mm] 40.15 x 15.9 29.5 x 10.0 29.5 x 10.0 15.0 x 10.0 15.0 x 10.0 11.68 x 9.9 2.0 0.5 2.5 0.5 0.5 0.4 SuperSO8 Power Block PQFN 3.3 x 3.3 Source-Down PQFN 3.3 x 3.3 PQFN 2 x 2 DirectFETTM For highest efficiency and power management Significant design shrink High power density and performance For highest efficiency and power management Enables significant space saving Best thermal behavior in a tiny footprint 1.0 1.0 1.0 1.0 0.9 Small: 0.65 Medium: 0.65 Large: 0.71 5.15 x 6.15 5.0 x 6.0 3.3 x 3.3 3.3 x 3.3 2.0 x 2.0 Small: 4.8 x 3.8 Medium: 6.3 x 4.9 Large: 9.1 x 6.98 0.8 1.5 1.4 3.2 11.1 0.5 500-950 V MOSFETs TO-247 20-300 V MOSFETs Space-saving and high performance packages Outline [mm] Discrete IGBTs Power ICs XENSIVTM sensors Microcontrollers Gate driver ICs Thermal resistance RthJC [K/W] Intelligent switches and input ICs Height [mm] WBG semiconductors Optimized for high power applications and high current capability Thermal resistance RthJC [K/W] Applications OptiMOSTM and StrongIRFETTM Packages www.infineon.com/powermosfet-12V-300V For more details on the product, click on the part number. 91 OptiMOSTM and StrongIRFETTM Discrete and integrated packages OptiMOSTM and StrongIRFETTM technologies are available in different packages to address demands for higher current carrying capability and significant space saving. The broad portfolio enables footprint reduction, boosted current rating and optimized thermal performance. While the surface mound leadless devices are enabled for footprint reduction, through-hole packages are characterized by a high power rating. Furthermore, Infineon offers innovative packages such as DirectFETTM and TO-Leadless. DirectFETTM is designed for high frequency applications by offering the lowest parasitic resistance. This package is available in three different sizes: small, medium and large. TO-Leadless is optimized to dissipate power up to 375 W, increasing power density with a substantial reduction in footprint. 10000 TO-247 Outline [mm2] TO-220 D2PAK 1000 DPAK DirectFETTM M-Can TO-220 FullPAK D2PAK 7-pin I2PAK TOLL DirectFETTM L-Can sTOLL SuperSO8 SuperCool DirectFETTM S-Can 100 PQFN 3.3x3.3 PQFN 3.3x3.3 Source Down PQFN 2x2 0 0 100 200 300 400 500 600 Power Dissipation [W] www.infineon.com/powermosfet-12V-300V For more details on the product, click on the part number. 92 20-300 V MOSFETs OptiMOSTM Source-Down power MOSFETs 25-150 V An innovative PQFN 3.3x3.3 mm product family WBG semiconductors 500-950 V MOSFETs Once again Infineon sets the standard in MOSFET performance with the new Source-Down package supporting the requirement for high power density and optimized system level efficiency. In contrast to a Drain-Down device, in Source-Down technology, we connect the source potential to the thermal pad (Figure 1). We go even further with the Source-Down Center-Gate footprint. Here the gate-pin is moved to the center supporting easy parallel configuration of multiple MOSFETs. With the larger drain-to-source creepage distance, the gates of multiple devices can be connected on a single PCB layer (Figure 2). Standard Drain-Down New Source-Down Drain 0.75 mm Drain Gate PQFN 3.3 x 3.3 mm Standard-Gate Source-Down footprint PQFN 3.3 x 3.3 mm Center-Gate Source-Down footprint 1.8 1.4 1.4 RthJC [C/W] Source Gate Source Discrete IGBTs PQFN 3.3 x 3.3 mm standard Drain-Down footprint Applications Source-Down PQFN 3.3 x 3.3 Key features Key benefits Major reduction in RDS(ON) , up to 30% due to larger silicon die in same package outline High current capability Superior thermal performance in RthJC Power ICs Features and benefits More efficient use of real estate High power density and performance Optimized layout possibilities Optimized footprint for MOSFET parallelization with center gate Standard-Gate and Center-Gate footprint In the Source-Down concept, the heat is dissipated directly into the PCB through a thermal pad instead of over the bond wire or the copper clip (Figure 3). Significantly improves the thermal resistance (RthJC) of Source-Down PQFN 3.3 x 3.3 mm Thermal vias Thermal vias this product family In most cases, thermal vias cannot be used on the thermal pad if it is connected to the noisy switch node potential With Source-Down, the thermal pad of the low-side MOSFET is now on the ground potential enabling the use of thermal vias right underneath the device Considerably improves the thermal performance and the power density in the end application Thermal vias Microcontrollers Drain-Down PQFN 3.3 x 3.3 mm XENSIVTM sensors Optimized thermal management Gate driver ICs Intelligent switches and input ICs System cost reduction MSL1 rated Thermal vias Packages www.infineon.com/PQFN-3-source-down For more details on the product, click on the part number. 93 OptiMOSTM Linear FET OptiMOSTM Linear FET Combining low on-state resistance (RDS(on)) with wide safe operating area (SOA) OptiMOSTM Linear FET is a revolutionary approach to avoid the trade-off between on-state resistance (RDS(on)) and linear mode capability operation in the saturation region of an enhanced mode MOSFET. It offers the state-of-the-art RDS(on) of a trench MOSFET, as well as the wide SOA of a classic planar MOSFET. This product is the perfect fit for hot swap and e-fuse applications commonly found in telecom and battery management systems. OptiMOSTM Linear FET prevents damage at the load in case of a short circuit by limiting high inrush currents. OptiMOSTM Linear FET is currently available in three voltage classes - 100 V, 150 V, and 200 V - in either D2PAK or D2PAK 7-pin packages. SOA comparison While the OptiMOSTM 5 power MOSFET 100 V, 1.7 m has an SOA of 0.5 A, the OptiMOSTM Linear FET version at the same RDS(on) offers a much wider SOA of 11.5 A (@ 54 V, 10 ms). OptiMOSTM 5 RDS(on) = 1.7 m OptiMOSTM Linear FET RDS(on) = 1.7 m 103 103 1 s 1 s 10 s 10 s 100 s 10 ms 102 100 s 102 1 ms ID [A] ID [A] 1 ms 101 DC 101 10 ms DC 100 10-1 100 10-1 100 101 102 103 10-1 10-1 100 101 102 VDS [V] VDS [V] 0.5 A @ 54 V tpulse= 10 ms 11.5 A @ 54 V tpulse= 10 ms 103 www.infineon.com/optimos-linearfet For more details on the product, click on the part number. 94 20-300 V MOSFETs OptiMOSTM 6 power MOSFETs 40 V Applications OptiMOSTM 6 Next generation of cutting edge MOSFETs WBG semiconductors 500-950 V MOSFETs Infineon's OptiMOSTM 6 power MOSFET 40 V family offers an optimized solution for synchronous rectification in switched mode power supplies (SMPS) in servers, desktop PCs, wireless and quick chargers. The improved performance in on-state resistance (RDS(on)) and figure of merits (FOM - RDS(on) x Qg and Qgd) yields an efficiency improvement, allowing easier thermal design and less paralleling, leading to system cost reduction. In addition, the best-in-class RDS(on) makes these devices suitable for ORing circuits. Infineon's market-leading OptiMOSTM 6 power MOSFETs 40 V are available in two different packages: SuperSO8 - 5 x 6 mm with RDS(on) ranging from 5.9 m down to 0.7 m PQFN 3x3 - 3.3 x 3.3 mm with RDS(on) ranging from 6.3 m down to 1.8 m Key benefits Compared to alternative products: RDS(on) reduced by 30% Improved FOM Qg x RDS(on) by 29% Improved FOM Qgd x RDS(on) by 46% Highest system efficiency and power density Optimized for synchronous rectification Less paralleling required Suited for ORing circuits Very low voltage overshoot RoHS compliant - halogen free Reduced need for snubber circuit MSL1 rated System cost reduction Power ICs Key features Discrete IGBTs Features and benefits 99.5 99.4 UT 99.3 fsw 99.2 UGS 99.0 0 UGS Gate drive 99.1 Gate drive Controller 100 200 300 400 500 600 700 800 900 1000 Output power [W] OptiMOSTM 6 power MOSFET BSC010N04LS6 OptiMOSTM 5 power MOSFET BSC010N04LS OptiMOSTM 5 power MOSFET BSC014N04LS 1100 1200 At the low output power range, where switching losses due to parasitic capacitance in the MOSFET are dominating, OptiMOSTM 6 power MOSFET BSC010N04LS6 achieves the same efficiency as the OptiMOSTM 5 power MOSFET BSC014N04LS at 40% lower RDS(on). Moreover, compared to the OptiMOSTM 5 power MOSFET 40 V 1.0 m , the OptiMOSTM 6 generation achieves lower switching losses at high load with the same RDS(on). This combination leads to an overall efficiency optimization in low and high load operating points. Gate driver ICs Efficiency [%] 99.6 Microcontrollers 99.7 XENSIVTM sensors In SMPS applications, OptiMOSTM 6 is the perfect solution for high efficiency over a wide range of output power, avoiding the trade-off between low and high load conditions. 99.8 Intelligent switches and input ICs OptiMOSTM 6 40 V combines the best-in-class RDS(on)with the superior switching performance Charger Packages www.infineon.com/optimos6 For more details on the product, click on the part number. 95 Small signal/ small power MOSFETs Small signal/small power MOSFETs 250-600 V Combining latest high-performance silicon technology with small and innovative packaging Small signal/small power products are ideally suited for space-constrained automotive or non-automotive applications. By combining the latest high-performance silicon technology with small and innovative packaging, Infineon's small signal/small power family offers designers more flexibility when it comes to making their power MOSFET selection. The products can be found in almost all applications e.g. battery protection, battery charging, LED lighting, load switches, DC-DC converters, level shifters, low voltage drives and many more. The entire family includes different packages: SOT-223, SOT-23, SOT-323, SOT-363, SOT-89, TSOP-6 and SC59 The product portfolio covers N-channel and P-channel enhancement mode MOSFETs as well as N-channel depletion mode products: 20-250 V P-channel enhancement mode (available in single and dual configurations) 20-600 V N-channel enhancement mode (available in single and dual configurations) -20/20 V and -30/30 V complementary (P + N channel) enhancement mode 60-600 V N-channel depletion mode Key features Key benefits Most products qualified to AEC Q101 Suitable for automotive and high quality demanding applications Four VGS(th) classes available for 1.8V, 2.5V, 4.5V, and 10V gate drives Easy interface to MCU ESD protected p-channel parts Reduction of design complexity VDS range from -250 V to 600V Wide selection of products available Industry standard small outline packages RoHS compliant and halogen free Environmentally friendly 600 400 45 250 240 200 Voltage class [V] 600 22 5 15 7.5 2.2 20 3 1.2 150 100 75 235 m 10 Small signal/small power MOSFETs are available in seven industrystandard package types ranging from the largest SOT-223 to the smallest SOT-363. 180 m 60 55 40 60 m 90 825 m 56 m 112 m 30 19 m 25 41 m 20 21 m 12 1 3 50 m 10 m 100 m 1 10 100 1000 Products are offered in single, dual and complementary configurations and are suitable for a wide range of applications, including battery protection, LED lighting, low voltage drives and DC-DC converters. RDS(on) max. @VGS = 4.5 V [m/] Package outline [mm2] SOT-363 SOT-323 SOT-23 TSOP-6 SC59 SOT-89 SOT-223 4.2 4.2 6.96 7.25 8.4 18 45.5 www.infineon.com/smallsignal For more details on the product, click on the part number. 96 Packages For more details on the product, click on the part number. 97 XENSIVTM sensors Microcontrollers Gate driver ICs Intelligent switches and input ICs Power ICs Discrete IGBTs WBG semiconductors 500-950 V MOSFETs 20-300 V MOSFETs Applications Product portfolio OptiMOSTM and StrongIRFETTM 20V (super) logic level RDS(on) max @ VGS=10V [m] TO-252 (DPAK) PQFN 2 x 2 PQFN 3.3 x 3.3 IRL6283MTRPBF RDS(on)=0.65 m <1 2-4 DirectFETTM IRLR6225TRPBF RDS(on)=4.0 m IRLHM620TRPBF * * * 1) RDS(on)=2.5 m IRL6297SDTRPBF * * RDS(on)=3.8 m; dual 4-10 IRLHS6242TRPBF RDS(on)=11.7 m IRLHS6276TRPBF * * RDS(on)=45.0 m; dual > 10 SuperSO8 IRFH6200TRPBF RDS(on)=0.99 m BSC026N02KS G RDS(on)=2.6 m IRLH6224TRPBF RDS(on)=3.0 m BSC046N02KS G RDS(on)=4.6 m SO-8 IRF6201TRPBF RDS(on)=2.45 m IRF3717 RDS(on)=4.4 m OptiMOSTM and StrongIRFETTM 25 V logic level RDS(on) max @ VGS=10V [m] <1 1-2 2-4 4-10 > 10 DirectFETTM PQFN 2 x 2 IRF6718L2TRPBF RDS(on)=0.7 m BSB008NE2LX RDS(on)=0.8 m IRF6898MTRPBF * * RDS(on)=1.1 m BSB012NE2LXI * * RDS(on)=1.2 m IRF6717MTRPBF RDS(on)=1.25 m IRF6894MTRPBF * * RDS(on)=1.3 m BSB013NE2LXI * * RDS(on)=1.3 m IRF6797MTRPBF * * RDS(on)=1.4 m IRF6716M RDS(on)=1.6 m IRF6715MTRPBF RDS(on)=1.6 m IRF6893MTRPBF * * RDS(on)=1.6 m IRF6892STRPBF * * RDS(on)=1.7 m IRF6795MTRPBF * * RDS(on)=1.8 m IRF6714MTRPBF RDS(on)=2.1 m BSF030NE2LQ RDS(on)=3.0 m BSF035NE2LQ RDS(on)=3.5 m IRF6811STRPBF * * RDS(on)=3.7 m ISK024NE2LM5 * * * * RDS(on)=2.4 m IRF6802SD RDS(on)=4.2 m IRF6710S2TRPBF RDS(on)=4.5 m IRF6712STRPBF RDS(on)=4.9 m IRF6810STRPBF * * RDS(on)=5.2 m PQFN 3.3 x 3.3 SuperSO8 IQE006NE2LM5 3) RDS(on)=0.6 m IQE006NE2LM5CG 3) RDS(on)=0.6 m BSZ009NE2LS5 RDS(on)=0.9 m BSZ010NE2LS5 RDS(on)=1.0 m BSZ011NE2LS5**** RDS(on)=1.1 m BSZ011NE2LS5I RDS(on)=1.1 m BSZ013NE2LS5I * * RDS(on)=1.3 m BSZ014NE2LS5IF * * * RDS(on)=1.45 m BSZ017NE2LS5I * * RDS(on)=1.7 m BSZ018NE2LS RDS(on)=1.8 m BSZ018NE2LSI * * RDS(on)=1.8 m BSC004NE2LS5 2) RDS(on)=0.9 m BSC009NE2LS5 RDS(on)=0.9 m BSC009NE2LS5I * * RDS(on)=0.95 m BSC010NE2LS RDS(on)=1.0 m BSC010NE2LSI * * RDS(on)=1.05 m BSC014NE2LSI * * RDS(on)=1.4 m IRFH5250D RDS(on)=1.4 m BSC015NE2LS5I * * RDS(on)=1.5 m BSC018NE2LS RDS(on)=1.8 m BSC018NE2LSI * * RDS(on)=1.8 m BSZ031NE2LS5 RDS(on)=3.1 m BSZ033NE2LS5 RDS(on)=3.3 m BSZ036NE2LS RDS(on)=3.6 m BSZ037NE2LS5 * * * * RDS(on)= 3.7m BSZ039NE2LS5 * * * * RDS(on) = 3.9 m BSC024NE2LS RDS(on)=2.4 m BSC026NE2LS5 RDS(on)=2.6 m BSC032NE2LS RDS(on)=3.2 m IRFHM8228TRPBF RDS(on)=5.2 m BSZ060NE2LS RDS(on)=6.0 m IRFHM8235TRPBF RDS(on)=7.7 m BSC050NE2LS RDS(on)=5.0 m SO-8 IRF8252 RDS(on)=2.7 m IRFHS8242 RDS(on)=13 m www.infineon.com/powermosfet-12V-300V 98 * Optimized for resonant applications (e.g. LLC converter) * * Monolithically integrated Schottky-like diode * * * RDS(on) max @ VGS=4.5 V * * * *For more information on the product, contact our product support 1) 2.5 VGS capable 2) Coming soon 3) Source-Down Center-Gate For more details on the product, click on the part number. Applications 20-300 V MOSFETs 500-950 V MOSFETs WBG semiconductors Discrete IGBTs Power ICs OptiMOSTM and StrongIRFETTM 25/30 V in Power Stage 3x3 and 5x6 Monolithically integrated Schottky like diode BVDSS [V] RDS(on), max. [ m] @ VGS=4.5 V max. Qg [nC] @ VGS=4.5 V typ. High-side Low-side High-side Low-side 4.0 BSZ0910ND TISON 3 x 3 - 30 13 13 4.0 BSZ0909ND TISON 3 x 3 - 30 25 25 1.8 1.8 BSC0910NDI TISON 5 x 6 u 25 5.9 1.6 7.7 25.0 BSC0911ND TISON 5 x 6 - 25 4.8 1.7 7.7 25.0 BSC0921NDI TISON 5 x 6 u 30 7.0 2.1 5.8 21.0 BSC0923NDI TISON 5 x 6 u 30 7.0 3.7 5.2 12.2 BSC0924NDI TISON 5 x 6 u 30 7.0 5.2 5.2 8.6 BSC0925ND TISON 5 x 6 - 30 6.4 6.4 5.2 6.7 BSC0993ND TISON 5 x 6 - 30 7.0 7.0 5.4 6.7 Intelligent switches and input ICs Package Gate driver ICs Part number OptiMOSTM and StrongIRFETTM 25/30 V in Power Block 5x6 and 5x4 Package Monolithically integrated Schottky like diode BVDSS [V] RDS(on), max. [ m] @ VGS=4.5 V max. Qg [nC] @ VGS=4.5 V typ. High-side Low-side High-side Low-side TISON 5 x 6 u 25 4.0 1.2 5.6 16.0 BSG0811ND TISON 5 x 6 - 25 4.0 1.1 5.6 20.0 BSG0813NDI TISON 5 x 6 u 25 4.0 1.7 5.6 12.0 XENSIVTM sensors BSG0810NDI Microcontrollers Part number Packages www.infineon.com/powermosfet-12V-300V For more details on the product, click on the part number. 99 Product portfolio OptiMOSTM and StrongIRFETTM 30V logic level RDS(on), max. @ VGS=10V [m] TO-252 (DPAK) TO-263 (DPAK) <1 1-2 2-4 4-10 10-25 IRLR8743TRPBF RDS(on)=3.1 m IPD031N03L G RDS(on)=3.1 m IPD040N03L G RDS(on)=4.0 m IPD050N03L G RDS(on)=5.0 m IRLR8726TRPBF RDS(on)=5.8 m IPD060N03L G RDS(on)=6.0 m IPD075N03L G RDS(on)=7.5 m IRLS3813TRLPBF RDS(on)=1.95 m IRFR8314TRPBF RDS(on)=2.2 m TO-263 (DPAK 7-pin) IPB009N03L G RDS(on)=0.95 m IPB034N03L G RDS(on)=3.4 m IPB042N03L G RDS(on)=4.2 m IPB055N03L G RDS(on)=5.5 m IPB065N03L G RDS(on)=6.5 m IPB080N03L G RDS(on)=8.0 m IRLR8729TRPBF RDS(on)=8.9 m IPD090N03L G RDS(on)=9.0 m IPD135N03L G RDS(on)=13.5 m IRLR3103 RDS(on)=19.0 m TO-220 IRLB3813PBF RDS(on)=1.95 m IRLB8314PBF RDS(on)=2.4 m IRL3713PBF RDS(on)=3.0 m IRLB8743PBF RDS(on)=3.2 m IPP034N03L G RDS(on)=3.4 m IPP042N03L G RDS(on)=4.2 m IRLB8748PBF RDS(on)=4.8 m IPP055N03L G RDS(on)=5.5 m IRL8113PBF RDS(on)=6.0 m IRLB8721PBF RDS(on)=8.7 m OptiMOSTM and StrongIRFETTM 30V logic level RDS(on), max. @ VGS=10V [m] DirectFETTM PQFN 3.3 x 3.3 <1 1-2 IRF8301MTRPBF RDS(on)=1.5 m IRF6726MTRPBF RDS(on)=1.7 m IRF6727MTRPBF RDS(on)=1.7 m IRF8302MTRPBF * * RDS(on)=1.8 m BSZ0500NSI * * RDS(on)=1.5 m BSZ019N03LS RDS(on)=1.9 m ISZ019N03L5S RDS(on)=1.9 m BSZ0901NS RDS(on)=2.0 m BSZ0501NSI * * RDS(on)=2.0 m 2-4 4-10 ISZ040N03L5IS RDS(on)=4.0 m ISZ065N03L5S RDS(on)=6.5 m SuperSO8 BSC005N03LS5 * RDS(on)=0.5 m BSC005N03LS5I * RDS(on)=0.5 m ISC011N03L5S RDS(on)=1.1 m IRFH8303TRPBF RDS(on)=1.1 m BSC011N03LS RDS(on)=1.1 m BSC011N03LSI * * RDS(on)=1.1 m BSC011N03LST * * * RDS(on)=1.1 m IRFH8307TRPBF RDS(on)=1.3 m BSC0500NSI * * RDS(on)=1.3 m BSC014N03LS G RDS(on)=1.4 m IRFH5301TRPBF RDS(on)=1.85 m ISC019N03L5S RDS(on)=1.9 m BSC0901NS RDS(on)=1.9 m BSC0501NSI * * RDS(on)=1.9 m BSC0901NSI * * RDS(on)=2.0 m ISC026N03L5S RDS(on)=2.6 m ISC037N03L5IS RDS(on)=3.7 m ISC045N03L5S RDS(on)=4.5 m TO-Leadless IPT004N03L RDS(on)=0.4 m www.infineon.com/powermosfet-12V-300V www.infineon.com/baredie 100 * Coming soon * * Monolithically integrated Schottky-like diode * * *For more information on the product, contact our product support For more details on the product, click on the part number. BSZ0902NSI * * RDS(on)=2.8 m BSZ0502NSI * * RDS(on)=2.8 m 2-4 IRF6722MTRPBF RDS(on)= 7.7 m 4-10 IRF8327S2 * * * * RDS(on)= 7.3 m 10-63 2 x 7.2 2 x 15 BSZ0503NSI * * RDS(on)=3.4 m IRLHM630 * * * RDS(on)= 3.5 m BSZ035N03LS G RDS(on)=3.5 m IRFHM830 RDS(on)= 3.8 m BSZ0904NSI * * RDS(on)=4.0 m IRFHM830D RDS(on)= 4.3 m BSZ0506NS RDS(on)=4.4 m IRFHM8326TRPBF RDS(on)=4.7 m BSZ050N03LS G RDS(on)=5.0 m BSZ058N03LS G RDS(on)=5.8 m IRFHM8329TRPBF RDS(on)=6.1 m BSZ065N03LS RDS(on)=6.5 m IRFHM8330TRPBF RDS(on)=6.6 m BSZ0994NS RDS(on)= 7.0 m IRFHM831 RDS(on)= 7.8 m BSZ088N03LS G RDS(on)=8.8 m IRFHM8334TRPBF RDS(on)=9.0 m BSZ100N03LS G RDS(on)=10.0 m BSZ0909NS RDS(on)=12.0 m IRFHM8337TRPBF RDS(on)=12.4 m BSZ130N03LS G RDS(on)=13.0 m IRFHM8363TRPBF RDS(on)=14.9 m BSC120N03LS G RDS(on)=12.0 m IRFH8337TRPBF RDS(on)=12.8 m 500-950 V MOSFETs ISK036N03LM5 2) RDS(on)=3.6 m WBG semiconductors IRLHM620TRPBF RDS(on)=2.5 m BSZ0902NS RDS(on)=2.6 m PQFN 2 x 2 IRF8788TRPBF RDS(on)=2.8 m IRF7862TRPBF RDS(on)=3.3 m IRF8734TRPBF RDS(on)=3.5 m Discrete IGBTs IRF6724MTRPBF RDS(on)=2.5 m IRF8306MTRPBF * * RDS(on)=2.5 m BSC020N03LS G RDS(on)=2.0 m IRFH5302TRPBF RDS(on)=2.1 m BSC0502NSI * * RDS(on)=2.4 m BSC025N03LS G RDS(on)=2.5 m IRFH5302DTRPBF * * RDS(on)=2.5 m BSC0902NS RDS(on)=2.6 m IRF8252TRPBF RDS(on)=2.7 m BSC0902NSI * * RDS(on)=2.8 m IRFH8316TRPBF RDS(on)=2.95 m BSC030N03LS G RDS(on)= 3.0 m IRFH8318TRPBF RDS(on)=3.1 m BSC0503NSI * * RDS(on)=3.2 m BSC034N03LS G RDS(on)=3.4 m BSC0504NSI * * RDS(on)=3.7 m BSC0904NSI * * RDS(on)=3.7 m IRFH8324TRPBF RDS(on)=4.1 m BSC042N03LS G RDS(on)=4.2 m BSC0906NS RDS(on)=4.5 m IRFH5304TRPBF RDS(on)=4.5 m IRFH8321TRPBF RDS(on)=4.9 m IRFH8325TRPBF RDS(on)=5.0 m BSC050N03LS G RDS(on)=5.0 m BSC052N03LS RDS(on)=5.2 m BSC057N03LS G RDS(on)=5.7 m IRFH8330TRPBF RDS(on)=6.6 m BSC080N03LS G RDS(on)=8.0 m IRFH8334TRPBF RDS(on)=9.0 m BSC090N03LS G RDS(on)=9.0 m BSC0909NS RDS(on)=9.2 m SO-8 Dual Power ICs BSZ0901NSI * * RDS(on)=2.1 m SO-8 IRF8736TRPBF RDS(on)=4.8 m Intelligent switches and input ICs IRF8304MTRPBF RDS(on)=2.2 m SuperSO8 Gate driver ICs PQFN 3.3 x 3.3 IRF8721TRPBF RDS(on)=8.5 m IRF8714TRPBF RDS(on)=8.7 m IRF8707TRPBF RDS(on)=11.9 m IRL6342 1) * * * RDS(on) = 14.6 m IRL6372 1) * * * RDS(on) = 18 m; dual BSC072N03LD G RDS(on)=7.2 m BSC150N03LD G RDS(on)=15.0 m IRF7907TRPBF RDS(on)=11.8 m+16.4 m IRF8513TRPBF * * * * RDS(on)=2.7 m+15.5 m IRF8313TRPBF RDS(on)=15.5 m+15.5 m IRF7905TRPBF RDS(on)=17.1 m+21.8 m Microcontrollers DirectFETTM IRLHS6342 * * * RDS(on)= 16 m IRFHS8342 RDS(on)= 16 m IRLHS6376 * * * RDS(on)= 63 m; dual XENSIVTM sensors RDS(on), max. @VGS=10V [m] 20-300 V MOSFETs OptiMOSTM and StrongIRFETTM 30V logic level 1) 2.5 VGS capable 2) Coming soon Packages www.infineon.com/powermosfet-12V-300V * * Monolithically integrated Schottky-like diode * * * RDS(on) max @VGS=4.5 V * * * *For more information on the product, contact our product support Applications Product portfolio For more details on the product, click on the part number. 101 Product portfolio OptiMOSTM and StrongIRFETTM 30V logic level 5 V optimized RDS(on), max. @VGS=10V [m] PQFN 3.3 x 3.3 BSC016N03MS G RDS(on) =1.6 m BSC020N03MS G RDS(on) =2.0 m BSC025N03MS G RDS(on) =2.5 m BSC030N03MS G RDS(on) =3.0 m BSC042N03MS G RDS(on) =4.2 m BSC057N03MS G RDS(on) =5.7 m BSC080N03MS G RDS(on) =8.0 m BSC090N03MS G RDS(on) =9.0 m BSC100N03MS G RDS(on) =10.0 m 1-2 2-4 BSZ035N03MS G RDS(on) =3.5 m BSZ050N03MS G RDS(on) =5.0 m 4-10 >10 SuperSO8 BSZ058N03MS G RDS(on) =5.8 m BSZ088N03MS G RDS(on) =8.8 m BSZ100N03MS G RDS(on) =10.0 m BSZ130N03MS G RDS(on) =13.0 m SO-8 SO-8 Dual BSO033N03MS G RDS(on) =3.3 m BSO040N03MS G RDS(on) =4.0 m BSC120N03MS G RDS(on) =12.0 m BSO110N03MS G RDS(on) =11.0 m BSO150N03MD G RDS(on) =15.0 m BSO220N03MD G RDS(on) =22.0 m w OptiMOSTM and StrongIRFETTM 40V normal level RDS(on), max. @VGS=10V [m] TO-252 (DPAK) TO-263 (D2PAK) <1 IRFS7430TRLPBF RDS(on) =1.3 m IPB015N04N G RDS(on) =1.5 m IRFS3004 RDS(on) =1.75 m IRFS7434TRLPBF RDS(on) =1.6 m IRFS7437TRLPBF RDS(on) =1.8 m 1-2 2-4 4-10 IRFR7440TRPBF RDS(on) =2.4 m IRFR7446TRPBF RDS(on) =3.9 m TO-263 (D2PAK 7-pin) IRF40SC240 RDS(on)=0.65 m IRFS7430TRL7PP RDS(on) =0.75 m IRFS7434TRL7PP RDS(on) =1.0 m IPB011N04N G RDS(on) =1.1 m IRFS3004-7P RDS(on) =1.25 m IRFS7437TRL7PP RDS(on) =1.4 m IPB020N04N G RDS(on) =2.0 m IRFS7440TRLPBF RDS(on) =2.5 m IRF1404S RDS(on) =4.0 m IRF40R207 RDS(on) =5.1 m >10 TO-220 IRFB7430PBF RDS(on) =1.3 m IPP015N04N G RDS(on) =1.5 m IRFB7434PBF RDS(on) =1.6 m IRFB3004PBF RDS(on) =1.75 m IRFB7437PBF RDS(on) =2.0 m IPP023N04N G RDS(on) =2.3 m IRFB7440PBF RDS(on) =2.5 m IRFB7446PBF RDS(on) =3.3 m TO-247 IRFP7430PBF RDS(on) =1.3 m DirectFETTM PQFN 3.3 x 3.3 IRL40DM247 2) RDS(on) =1.0 m IRF7739L1TRPBF RDS(on) =1.0 m IRF7480MTRPBF RDS(on) =1.2 m IRF7946TRPBF RDS(on) =1.4 m BSB015N04NX3 G RDS(on) =1.5 m IRF40DM229 RDS(on)=1.85 m IRF7483MTRPBF RDS(on) =2.3 m SuperSO8 TO-220 FullPAK IRFH7084TRPBF RDS(on) =1.25 m IRFH7004TRPBF RDS(on) =1.4 m BSC017N04NS G RDS(on) =1.7 m IRF40H210 RDS(on) =1.7 m BSC019N04NS G RDS(on) =1.9 m IPP041N04N G RDS(on) =4.1 m IRF40B207 RDS(on) =4.5 m IPP048N04N G RDS(on)=4.8 m BSZ105N04NS G RDS(on) =10.5 m BSZ165N04NS G RDS(on) =16.5 m IRFH7440TRPBF RDS(on) =2.4 m IRFH5004TRPBF RDS(on)=2.6 m BSC030N04NS G RDS(on) =3.0 m IRFH7446TRPBF RDS(on) =3.3 m BSC054N04NS G RDS(on)=5.4 m IRF40H233 RDS(on)=5.9 m, dual BSC076N04ND RDS(on) =7.6 m, dual IPA028N04NM3S RDS(on) =2.8 m IPA041N04N G * RDS(on)=4.1 m www.infineon.com/powermosfet-12V-300V 2) Coming soon * For more information on the product, contact our product support 102 For more details on the product, click on the part number. Applications 20-300 V MOSFETs 500-950 V MOSFETs IRL40B209 RDS(on) =1.25 m IRLB3034PBF RDS(on) =1.7 m IRL40B212 RDS(on) =1.9 m TO-247 IRLP3034PBF RDS(on) =1.7 m DirectFETTM PQFN 3.3 x 3.3 IRL7472L1TRPBF RDS(on) =0.45 m BSC007N04LS6 RDS(on)=0.7 m BSB014N04LX3 G RDS(on) =1.4 m IRL7486MTRPBF RDS(on) =1.4 m BSC010N04LS RDS(on) =1.0 m BSC010N04LS6 RDS(on) =1.0 m BSC010N04LST RDS(on)=1.0 m BSC010N04LSI RDS(on) =1.05 m BSC010N04LSC * RDS(on)= 1.05 m BSC014N04LST RDS(on) =1.4 m BSC014N04LS RDS(on) =1.4 m BSC014N04LSI RDS(on) =1.45 m BSC016N04LS G RDS(on) =1.6 m BSC018N04LS G RDS(on) =1.8 m BSC019N04LS RDS(on) =1.9 m BSC019N04LST RDS(on) =1.9 m BSC022N04LS RDS(on) =2.2 m BSC022N04LS6 RDS(on) =2.2 m IRLH5034TRPBF RDS(on)=2.4 m BSC026N04LS RDS(on) =2.6 m BSC027N04LS G RDS(on) =2.7 m BSC032N04LS RDS(on) =3.2 m BSC035N04LS G RDS(on) =3.5 m BSC050N04LS G RDS(on) =5.0 m BSC059N04LS G RDS(on) =5.9 m BSC059N04LS6 RDS(on) =5.9 m BSC072N04LD RDS(on)=7.2 m, dual BSC093N04LS G RDS(on) =9.3 m 1-2 BSZ018N04LS6 RDS(on)=1.8 m IRL40B215 RDS(on) =2.7 m IRF6613TRPBF RDS(on)=3.4 m IPP039N04L G RDS(on) =3.9 m 2-4 IPD036N04L G IRL1404S RDS(on)=3.6 m RDS(on) =4.0 m IRLR31142TRPBF * * RDS(on) =4.5 m SuperSO8 BSZ021N04LS6 RDS(on) =2.1 m BSZ024N04LS6 RDS(on) =2.4 m BSZ025N04LS RDS(on) =2.5 m BSZ028N04LS RDS(on) =2.8 m IRF6616TRPBF RDS(on) =5.0 m IRF6614TRPBF RDS(on)=8.3 m BSZ034N04LS RDS(on) =3.4 m BSZ040N04LS G RDS(on) =4.0 m BSZ063N04LS6 RDS(on) =6.3 m 4-10 BSZ097N04LS G RDS(on) =9.7 m TO-Leadless IRL40T209 RDS(on)= 0.8 m Power ICs IRL40SC228 RDS(on) =0.65 m IRL40SC209 RDS(on) =0.8 m IPB015N04L G IPB011N04L G RDS(on) =1.5 m RDS(on) =1.1 m IRLS3034TRLPBF IRLS3034TRL7P RDS(on) =1.7 m RDS(on) =1.4 m IRL40S212 RDS(on) =1.9 m <1 TO-220 Intelligent switches and input ICs TO-263 (D2PAK 7-pin) Gate driver ICs TO-263 (D2PAK) Microcontrollers TO-252 (DPAK) XENSIVTM sensors RDS(on), max. @VGS=10V [m] Packages www.infineon.com/powermosfet-12V-300V * Increased creepage distance * * For more information on the product, contact our product support WBG semiconductors OptiMOSTM and StrongIRFETTM 40V logic level Discrete IGBTs w For more details on the product, click on the part number. 103 Product portfolio OptiMOSTM and StrongIRFETTM 60V normal level RDS(on), max. @VGS=10V [m] TO-252 (DPAK) TO-263 (D2PAK) 1-2 IPD025N06N 2) RDS(on) =2.5 m IRFS7530TRLPBF RDS(on) =2.0 m IRFS7534TRLPBF RDS(on) =2.4 m IRFS3006 RDS(on) =2.5 m TO-263 (D2PAK 7-pin) IPB010N06N 2) RDS(on) =1.0 m IRF60C241 * RDS(on)=1.3 m IRFS7530TRL7PP RDS(on) =1.4 m IPB014N06N 2) RDS(on) =1.4 m IPB017N06N3 G RDS(on) =1.7 m IRFS7534TRL7PP * * RDS(on) =1.95 m IRFS3006TRL7PP RDS(on) =2.1 m IPB026N06N 2) RDS(on) =2.6 m IPB029N06N3 G RDS(on) =2.9 m 2-4 IPD033N06N 2) RDS(on)=3.3 m IPD034N06N3 G RDS(on) =3.4 m IRFS3206 RDS(on)=3.0 m IRFS7537TRLPBF RDS(on) =3.3 m IPD038N06N3 G RDS(on) =3.8 m IPB037N06N3 G RDS(on) =3.7 m IRFS3306 RDS(on) =4.2 m IRFR7540TRPBF RDS(on) =4.8 m IPD053N06N 2) RDS(on) =5.3 m 4-10 >10 IRFR7546TRPBF RDS(on) =7.9 m IRFR1018ES * RDS(on)=8.4 m IPD088N06N3 G RDS(on)=8.8 m IRF60R217 RDS(on) =9.9 m IRFR3806 RDS(on) =15.8 m IRFS7540TRLPBF RDS(on) =5.1 m IPB054N06N3 G RDS(on)=5.4 m IPB057N06N 2) RDS(on) =5.7 m IRF1018ES RDS(on)=8.4 m IPB090N06N3 G RDS(on) =9.0 m IRFS3806 RDS(on) =15.8 m TO-262 (I2PAK) IPI020N06N 2) RDS(on) =2.0 m IPI024N06N3 G RDS(on) =2.4 m IPI029N06N 2) RDS(on) =2.9 m IPI032N06N3 G RDS(on) =3.2 m IPI040N06N3 G RDS(on) =4.0 m TO-220 IRFB7530PBF RDS(on) =2.0 m IPP020N06N 2) RDS(on) =2.0 m IRFB7534PBF RDS(on) =2.4 m IPP024N06N3 G 2) RDS(on) =2.4 m IRFB3006PBF RDS(on) =2.5 m IPP029N06N 2) RDS(on) =2.9 m IRFB3206BF RDS(on) =3.0 m IPP032N06N3 G RDS(on) =3.2 m IRFB7537PBF RDS(on) =3.3 m IRFB3256PBF RDS(on) =3.4 m IPP040N06N3 G RDS(on) =4.0 m IPP040N06N 2) RDS(on) =4.0 m IRFB3306PBF RDS(on) =4.2 m IRFB7540PBF RDS(on) =5.1 m IPP057N06N3 G 2) RDS(on) =5.7 m IRFB7545PBF RDS(on) =5.9 m IPP060N06N 2) RDS(on) =6.0 m IRFB7546PBF RDS(on) =7.3 m IRF1018EPBF RDS(on) =8.4 m IRF60B217 RDS(on) =9.0 m IPP093N06N3 G RDS(on) =9.3 m IRFB3806PBF RDS(on) =15.8 m TO-220 FullPAK TO-247 IRFP7530PBF RDS(on) =2.0 m IPA029N06N 2) RDS(on) =2.9 m IPA029N06NM5S RDS(on) =2.9 m IPA032N06N3 G RDS(on) =3.2 m IPA040N06N 2) RDS(on) =4.0 m IPA040N06N M5S RDS(on) =4.0 m IPA057N06N3 G RDS(on) =5.7 m IRFP3006PBF RDS(on) =2.5 m IRFP3206PBF RDS(on) =3.0 m IRFP7537PBF RDS(on) =3.3 m IRFP3306PBF RDS(on) =4.2 m IPA060N06N 2) RDS(on) =6.0 m IPA060N06NM5S RDS(on) =6.0 m IPA093N06N3 G RDS(on) =9.3 m www.infineon.com/powermosfet-12V-300V 2) 6 V rated (RDS(on) also specified @ VGS=6 V) * For more information on the product, contact our product support 104 For more details on the product, click on the part number. SuperSO8 IRF7749L1TRPBF RDS(on) =1.5 m BSC012N06NS RDS(on) =1.2 m BSC014N06NS 2) RDS(on) =1.4 m BSC014N06NST 2) RDS(on) =1.45 m BSC016N06NST 2) RDS(on) =1.6 m BSC016N06NS 2) RDS(on) =1.6 m BSC019N06NS 2) RDS(on) =1.9 m BSC028N06NS 2) RDS(on) =2.8 m BSC028N06NST 2) RDS(on) =2.8 m BSC031N06NS3 G RDS(on) =3.1 m IRFH7085TRPBF RDS(on) =3.2 m BSC034N06NS 2) RDS(on) =3.4 m BSC039N06NS 2) RDS(on) =3.9 m IRFH5006TRPBF RDS(on) =4.1 m IRLH5036TRPBF RDS(on) =4.4 m IRFH7545TRPBF RDS(on) =5.2 m BSC066N06NS 2) RDS(on) =6.6 m BSC076N06NS3 G RDS(on) =7.6 m BSC097N06NS 2) RDS(on) =9.7 m BSC097N06NST 2) RDS(on)=9.7 m BSC110N06NS3 G RDS(on) =11.0 m IRFH5406TRPBF RDS(on)=14.4 m BSC155N06ND RDS(on)=15.5 m, dual 1-2 IRF7748L1TRPBF RDS(on) =2.2 m BSZ039N06NS RDS(on)=3.9 m BSB028N06NN3 G RDS(on) =2.8 m IRF60DM206 RDS(on) =2.9 m 2-4 IRF7580MTRPBF RDS(on) =3.6 m IRF6648 RDS(on) =7.0 m IRF6674 RDS(on) =11.0 m 4-10 BSZ042N06NS 2) RDS(on) =4.2 m IRF7855TRPBF RDS(on)=9.4 m BSZ068N06NS 2) RDS(on) =6.8 m BSZ100N06NS 2) RDS(on) =10.0 m IRF7351TRPBF RDS(on)=17.8 m, dual BSZ110N06NS3 G RDS(on) =11.0 m >10 IPT007N06N 2) RDS(on) =0.7 m IPT012N06N 2) RDS(on) =1.2 m 500-950 V MOSFETs <1 TO-Leadless WBG semiconductors SO-8 Discrete IGBTs PQFN 3.3 x 3.3 Power ICs DirectFETTM Intelligent switches and input ICs RDS(on), max. @VGS=10V [m] 20-300 V MOSFETs OptiMOSTM and StrongIRFETTM 60V normal level Applications Product portfolio 1-2 2-4 IPD031N06L3 G RDS(on) =3.1 m IPD048N06L3 G RDS(on) =4.8 m 4-10 >10 IRLR3636TRPBF RDS(on) =6.8 m IPD079N06L3 G RDS(on) =7.9 m TO-263 (D2PAK) IPB019N06L3 G RDS(on) =1.9 m IRL60S216 RDS(on) =1.95 m IRLS3036TRLPBF RDS(on) =2.4 m IPB034N06L3 G RDS(on) =3.4 m TO-263 (D2PAK 7-pin) IRL60SC216 RDS(on) =1.5 m IPB016N06L3 G RDS(on) =1.6 m IRLS3036TRL7PP RDS(on) =1.9 m IPB081N06L3 G RDS(on) =8.1 m IPD220N06L3 G RDS(on) =22.0 m IPD350N06L G RDS(on) =35.0 m TO-262 (I2PAK) TO-220 IRL60SL216 RDS(on) =1.95 m IRL60B216 RDS(on) =1.9 m IRLB3036PBF RDS(on) =2.4 m IPP037N06L3 G RDS(on) =3.7 m IPP052N06L3 G RDS(on) =5.2 m IPI084N06L3 G RDS(on) =8.4 m PQFN 2 x 2 PQFN 3.3 x 3.3 BSZ037N06LS5 RDS(on) =3.7 m BSZ040N06LS5 RDS(on) =4.0 m IPP084N06L3 G RDS(on) =8.4 m IRL60HS118 RDS(on)=17.0 m BSZ065N06LS5 RDS(on) =6.5 m BSZ067N06LS3 G RDS(on) =6.7 m BSZ099N06LS5 RDS(on) =9.9 m BSZ100N06LS3 G RDS(on) =10.0 m SuperSO8 Microcontrollers TO-252 (DPAK) BSC027N06LS5 RDS(on) =2.7 m BSC028N06LS3 G RDS(on) =2.8 m IRLH5036TRPBF RDS(on) =4.4 m BSC065N06LS5 RDS(on)=6.5 m BSC067N06LS3 G RDS(on) =6.7 m BSC094N06LS5 RDS(on) =9.4 m BSC100N06LS3 G RDS(on) =10.0 m BSC112N06LD RDS(on)=11.2 m, dual 2) 6 V rated (RDS(on) also specified @ VGS = 6 V) Packages www.infineon.com/powermosfet-12V-300V XENSIVTM sensors RDS(on), max. @VGS=10V [m] Gate driver ICs OptiMOSTM and StrongIRFETTM 60V logic level For more details on the product, click on the part number. 105 Product portfolio OptiMOSTM and StrongIRFETTM 75 V normal level RDS(on), max. @VGS=10V [m] TO-252 (DPAK) 1-2 2-4 TO-263 (DPAK) TO-263 (DPAK 7-pin) IPB020NE7N3 G RDS(on) =2.0 m IRFS7730TRL7PP RDS(on) =2.0 m IRFS7730TRLPBF RDS(on) =2.6 m IRFS3107TRLPBF RDS(on) =3.0 m IPB031NE7N3 G RDS(on) =3.1 m IRFS7734TRLPBF RDS(on) =3.5 m IRFS3107TRL7PP RDS(on) =2.6 m IPP023NE7N3 G RDS(on) =2.3 m IRFB7730PBF RDS(on) =2.6 m IRFB3077PBF RDS(on) =3.3 m IPP034NE7N3 G RDS(on) =3.4 m IRFB7734PBF RDS(on) =3.5 m IRFB3207ZPBF RDS(on) =4.5 m IPP052NE7N3 G RDS(on) =5.2 m IRFB3307ZPBF RDS(on) =5.8 m IPP062NE7N3 G RDS(on) =6.2 m IRFB7740PBF RDS(on) =7.3 m IRFB7787PBF RDS(on) =8.4 m IRFB3607PBF RDS(on) =9.0 m IRFB7746PBF RDS(on) =10.6 m IRFS7734TRL7PP RDS(on) =3.05 m IRFS3207ZTRLPBF RDS(on) =4.1 m IPB049NE7N3 G RDS(on) =4.9 m IRFS3307ZTRLPBF RDS(on) =5.8 m IRFS7762TRLPBF RDS(on) =6.7 m 4-10 IRFR7740TRPBF RDS(on) =7.2 m >10 IRFR3607PBF RDS(on) =9.0 m IRFR7746TRPBF RDS(on) =11.2 m TO-220 IRFS7787TRLPBF RDS(on) =8.4 m IRFS3607TRLPBF RDS(on)=9.0 m TO-247 IRFP7718PBF RDS(on) =1.8 m IRFP4368PBF RDS(on) =1.85 m IRFP3077PBF RDS(on) =3.3 m DirectFETTM SuperSO8 IRF7759L2TRPBF RDS(on) =2.3 m BSC036NE7NS3 G RDS(on) =3.6 m BSC042NE7NS3 G RDS(on) =4.2 m IRF7780MTRPBF RDS(on) =5.7 m IRFH5007TRPBF RDS(on) =5.9 m IRFH7787TRPBF RDS(on) =8.0 m BSF450NE7NH3 1) RDS(on) =45.0 m OptiMOSTM and StrongIRFETTM 80V normal level-logic level RDS(on), max. @VGS=10V [m] TO-252 (DPAK) 1-2 TO-263 (DPAK) TO-263 (DPAK 7-pin) TO-262 (I2PAK) TO-220 TO-220 FullPAK DirectFETTM PQFN 2 x 2 PQFN 3.3 x 3.3 SuperSO8 TO-Leadless IPB017N08N5 IPB015N08N5 RDS(on) =1.7 m RDS(on) =1.5 m IPB020N08N5 IPB019N08N3 G IPP020N08N5 BSC021N08NS5 IPT019N08N5 RDS(on) =2.0 m RDS(on) =1.9 m RDS(on) =2.0 m RDS(on) =2.1 m RDS(on) =1.9 m IPB024N08N5 IPP023N08N5 BSC025N08LS5 RDS(on) =2.4 m RDS(on) =2.3 m RDS(on) =2.5 m BSC026N08NS5 IPT012N08N5 RDS(on) =1.2 m IPB019N08N5 RDS(on) =1.95 m 2-4 IPB025N08N3 G IPB030N08N3 G IPP027N08N5 RDS(on) =2.5 m RDS(on) =3.0 m RDS(on) =2.7 m RDS(on) =2.6 m IPP028N08N3 G IPA028N08N3 G BSC030N08NS5 IPT029N08N5 RDS(on) =2.8 m RDS(on) =2.8 m RDS(on) =3.0 m RDS(on) =2.9 m IPB031N08N5 IPP034N08N5 RDS(on) =3.1 m RDS(on) =3.4 m BSC037N08NS5 RDS(on) =3.7 m BSC037N08NS5T RDS(on)= 3.7 m IPI037N08N3 G IPP037N08N3 G IPA037N08N3 G RDS(on) =3.5 m RDS(on) =3.7 m RDS(on) =3.7 m RDS(on) =3.7 m BSC040N08NS5 RDS(on) =4.0 m IPD046N08N5 IPB049N08N5 IPP052N08N5 IPA040N08NM5S BSB044N08NN3 G RDS(on)=4.6 m RDS(on) =4.9 m RDS(on) =5.2 m RDS(on) =4.0 m RDS(on) =4.4 m IPD053N08N3 G IPB054N08N3 G IPP057N08N3 G IPA052N08NM5S RDS(on) =5.3 m RDS(on) =5.4 m RDS(on) =5.7 m RDS(on) =5.2 m 4-10 >10 IPB035N08N3 G IPB067N08N3 G IPA057N08N3 G RDS(on) =6.7 m RDS(on) =5.7 m BSC047N08NS3 G RDS(on) =4.7 m BSC052N08NS5 RDS(on) =5.2 m BSZ070N08LS5 BSC057N08NS3 G RDS(on) =7.0 m RDS(on) =5.7 m IRF6646TRPBF BSZ075N08NS5 BSC061N08NS5 RDS(on) =9.5 m RDS(on) =7.5 m RDS(on) =6.1 m IPD096N08N3 G IPP100N08N3 G IRF7854TRPBF BSZ084N08NS5 BSC072N08NS5 RDS(on) =9.6 m RDS(on) =9.7 m RDS(on) =9.5 m RDS(on) =8.4 m RDS(on) =7.2 m BSB104N08NP3 * IRL80HS120 BSZ110N08NS5 BSC117N08NS5 RDS(on) =10.4 m RDS(on)=32.0 m RDS(on) =11.0 m RDS(on) =11.7 m IPD135N08N3 G BSZ123N08NS3 G BSC123N08NS3 * RDS(on) =13.5 m RDS(on) =12.3 m RDS(on) =12.3 m BSZ340N08NS3 G BSC340N08NS3 G RDS(on) =34.0 m RDS(on) =34.0 m www.infineon.com/powermosfet-12V-300V 1) DirectFETTM S * For more information on the product, contact our product support 106 For more details on the product, click on the part number. 2-4 IPD050N10N5 RDS(on)=5.0 m IPD068N10N3 G RDS(on) =6.8 m 4-10 IPD082N10N3 G RDS(on) =8.2 m IPB042N10N3 G RDS(on) =4.2 m IRF100S201 RDS(on) =4.2 m IRFS4010TRLPBF RDS(on) =4.7 m IPB065N10N3 G RDS(on)=6.5 m IRFS4310ZTRLPBF RDS(on) =7.0 m IPB083N10N3 G RDS(on) =8.3 m IPI030N10N3 G RDS(on) =3.0 m IPI045N10N3 G RDS(on) =4.5 m IPI072N10N3 G RDS(on) =7.2 m IPI086N10N3 G RDS(on) =8.6 m IRFS4410ZTRLPBF RDS(on) =9.0 m 10-25 IPB123N10N3 G RDS(on) =12.3 m IRFS4510TRLPBF RDS(on) =13.9 m IPI180N10N3 G RDS(on) =18.0 m IPP023N10N5 RDS(on) =2.3 m IPP030N10N3 G RDS(on) =3.0 m IPP030N10N5 RDS(on)=3.0 m IPP039N10N5 RDS(on)=3.9 m IRF100B201 RDS(on) =4.2 m IRFB4110PBF RDS(on) =4.5 m IPP045N10N3 G RDS(on) =4.5 m IRFB4310ZPBF RDS(on) =6.0 m IPP072N10N3 G RDS(on) =7.2 m IPP083N10N5 RDS(on) =8.3 m IPP086N10N3 G RDS(on) =8.6 m IRF100B202 RDS(on) =8.6 m IRFS4410ZTRLPBF RDS(on) =9.0 m IRFB4410ZPBF RDS(on) =9.0 m IRFB4510PBF RDS(on) =13.5 m TO-220 FullPAK IPA030N10N3 G RDS(on) =3.0 m IPA045N10N3 G RDS(on) =4.5 m IPA050N10NM5S RDS(on) =5.0 m TO-247 IRF100P218 RDS(on)=1.1 m IRF100P219 RDS(on)=2.1 m IRFP4468PBF RDS(on) =2.6 m IRFP4110PBF RDS(on) =4.5 m IRFP4310ZPBF RDS(on) =6.0 m IPA083N10N5 RDS(on) =8.3 m IPA083N10NM5S RDS(on) =8.3 m IPA086N10N3 G RDS(on) =8.6 m IRFP4410ZPBF * RDS(on) =9.0 m IPA126N10NM3S RDS(on) =12.6 m IRFI4212H-117P RDS(on) =72.5 m, HB 1) XENSIVTM sensors Microcontrollers Gate driver ICs >25 IPD122N10N3 G RDS(on) =12.2 m IPD12CN10N G RDS(on)=12.4 m IRFR4510TRPBF * RDS(on) =13.9 m IPD180N10N3 G * RDS(on) =18.0 m IPD25CN10N G RDS(on) =25.0 m IPD33CN10N G RDS(on) =33.0 m IPD78CN10N G RDS(on) =78.0 m TO-220 500-950 V MOSFETs 1-2 IPB017N10N5 RDS(on) =1.7 m IPB017N10N5LF RDS(on)=1.7 m IPB024N10N5 RDS(on) =2.4 m IPB025N10N3 G RDS(on) =2.5 m IPB032N10N5 RDS(on) =3.2 m IPB039N10N3 G RDS(on) =3.9 m IRFS4010TRL7PP RDS(on) =4.0 m TO-262 (I2PAK) WBG semiconductors IPB020N10N5 RDS(on) =2.0 m IPB020N10N5LF RDS(on)=2.0 m IPB027N10N3 G RDS(on) =2.7 m IPB027N10N5 RDS(on) =2.7 m IPB033N10N5LF RDS(on) =3.3 m TO-263 (DPAK 7-pin) Discrete IGBTs TO-263 (DPAK) Power ICs TO-252 (DPAK) Intelligent switches and input ICs RDS(on), max. @VGS=10V [m] 20-300 V MOSFETs OptiMOSTM and StrongIRFETTM 100V normal level Applications Product portfolio 1) HB = Half-bridge * For more information on the product, contact our product support Packages www.infineon.com/powermosfet-12V-300V For more details on the product, click on the part number. 107 Product portfolio OptiMOSTM and StrongIRFETTM 100V normal level RDS(on), max. @VGS=10V [m] DirectFETTM PQFN 3.3 x 3.3 SuperSO8 IRF7769L1TRPBF RDS(on) =3.5 m BSC035N10NS5 RDS(on) =3.5 m BSC040N10NS5 RDS(on) =4.0 m BSC050N10N5 * RDS(on) =5.0 m BSC060N10NS3 G RDS(on) =6.0 m BSC070N10NS3 G RDS(on) =7.0 m BSC070N10NS5 RDS(on) =7.0 m IRFH5010TRPBF RDS(on) =9.0 m BSC098N10NS5 RDS(on) =9.8 m BSC100N10NSF G RDS(on) =10.0 m BSC109N10NS3 G RDS(on) =10.9 m BSC118N10NS G RDS(on) =11.8 m IRFH5110TRPBF RDS(on) =12.4 m IRFH7110TRPBF RDS(on) =13.5 m IRFH5210TRPBF RDS(on) =14.9 m BSC160N10NS3 G RDS(on) =16.0 m BSC196N10NS G RDS(on) =19.6 m BSC252N10NSF G RDS(on)=25.2 m BSC440N10NS3 G RDS(on) =44.0 m BSC750N10ND G RDS(on) =75.0 m; dual BSB056N10NN3 G RDS(on) =5.6 m 4-10 BSZ097N10NS5 RDS(on) =9.7 m IRF6644TRPBF RDS(on) =13.0 m 10-25 >25 2 x 75 SO-8 BSF134N10NJ3 G 1) RDS(on) =13.4 m IRF6662TRPBF RDS(on) =22.0 m IRF6645TRPBF RDS(on) =35.0 m IRF7665S2TRPBF RDS(on) =62.0 m IRF6665TRPBF RDS(on) =63.0 m 2 x 195 BSZ160N10NS3 G RDS(on) =16.0 m BSZ440N10NS3 G RDS(on) =44.0 m IRFHM792TRPBF RDS(on) =195.0 m, dual TO-Leadless IPT015N10N5 RDS(on) =1.5 m IPT020N10N3 RDS(on) =2.0 m IPT020N10N5 RDS(on) =2.0 m IPT026N10N5 RDS(on) =2.6 m BSC027N10NS5 RDS(on) =2.7 m 1-2 2-4 SuperSO8 dual cool BSC040N10NS5SC * RDS(on) =4.0 m BSC070N10NS5SC * RDS(on) =7.0 m IRF7853TRPBF RDS(on) =18.0 m OptiMOSTM and StrongIRFETTM 100V logic level RDS(on), max. @VGS=10V [m] TO-252 (DPAK) TO-263 (D2PAK) 2-4 IRLS4030TRLPBF RDS(on) =4.3 m 4-10 10-25 TO-263 (DPAK 7-pin) IRLS4030TRL7PP RDS(on) =3.9 m IRLR3110ZTRPBF RDS(on) =14.0 m >25 TO-220 PQFN 2 x 2 PQFN 3.3 x 3.3 IRLB4030PBF RDS(on) =4.3 m BSZ096N10LS5 RDS(on) =9.6 m IPP12CN10L G RDS(on) =12.0 m BSZ146N10LS5 RDS(on) =14.6 m BSZ150N10LS3 * RDS(on) =15.0 m IRL100HS121 RDS(on)=42.0 m SuperSO8 BSC034N10LS5 RDS(on) =3.4 m BSC070N10LS5 RDS(on)=7.0 m IRLH5030TRPBF RDS(on)=9.0 m BSC096N10LS5 RDS(on)=9.6 m BSC123N10LS G RDS(on) =12.3 m BSC146N10LS5 RDS(on) =14.6 m BSC265N10LSF G RDS(on) =26.5 m www.infineon.com/powermosfet-12V-300V 1) DirectFETTM S * For more information on the product, contact our product support 108 For more details on the product, click on the part number. Applications 20-300 V MOSFETs 500-950 V MOSFETs WBG semiconductors Discrete IGBTs Power ICs OptiMOSTM and StrongIRFETTM 120V normal level TO-263 (D2PAK) IPB038N12N3 G RDS(on) =3.8 m 2-4 TO-263 (DPAK 7-pin) IPB036N12N3 G RDS(on) =3.6 m TO-262 (I2PAK) IPI041N12N3 G RDS(on) =4.1 m 4-10 IPD110N12N3 G RDS(on) =11.0 m IPB144N12N3 G RDS(on) =14.4 m IPI147N12N3 G RDS(on) =14.7 m IPP041N12N3 G RDS(on) =4.1 m IPP048N12N3 G RDS(on) =4.8 m IPP076N12N3 G RDS(on) =7.6 m IPP114N12N3 G RDS(on) =11.4 m IPP147N12N3 G RDS(on) =14.7 m PQFN 3.3 x 3.3 SuperSO8 BSC077N12NS3 G RDS(on) =7.7 m BSC080N12LS * RDS(on) =8.0 m BSZ240N12NS3 G RDS(on) =24.0 m BSC120N12LS * RDS(on) =12.0 m BSC190N12NS3 G RDS(on) =19.0 m XENSIVTM sensors Microcontrollers 10-25 IPI076N12N3 G RDS(on) =7.6 m TO-220 Intelligent switches and input ICs TO-252 (DPAK) Gate driver ICs RDS(on), max. @VGS=10V [m] * For more information on the product, contact our product support Packages www.infineon.com/powermosfet-12V-300V For more details on the product, click on the part number. 109 Product portfolio OptiMOSTM and StrongIRFETTM 135-150V normal level RDS(on), max. @VGS=10V [m] DirectFETTM PQFN 3.3 x 3.3 4-10 IRF7779L2TRPBF 5) RDS(on) =11.0 m 10-25 >25 BSB165N15NZ3 G RDS(on) =16.5 m BSB280N15NZ3 G RDS(on) =28.0 m IRF6643TRPBF RDS(on) =34.5 m IRF6775MTRPBF RDS(on) =56.0 m BSZ300N15NS5 RDS(on) =30.0 m BSZ520N15NS3 G RDS(on) =52.0 m BSZ900N15NS3 G RDS(on) =90.0 m SuperSO8 TO-Leadless BSC074N15NS5 3) RDS(on) =7.4 m BSC093N15NS5 RDS(on) =9.3 m BSC110N15NS5 RDS(on) =11.0 m BSC160N15NS5 RDS(on) =16.0 m BSC190N15NS3 G RDS(on) =19.0 m BSC360N15NS3 G RDS(on) =36.0 m BSC520N15NS3 G RDS(on) =52.0 m IPT059N15N3 RDS(on) = 5.9 m OptiMOSTM and StrongIRFETTM 135-150V normal level RDS(on), max. @VGS=10V [m] TO-252 (DPAK) 4-10 10-25 IPD200N15N3 G RDS(on) =20.0 m >25 IRFR4615 RDS(on) =42.0 m IPD530N15N3 G RDS(on) =53.0 m TO-263 (D2PAK) TO-263 (DPAK 7-pin) IPB048N15N5 RDS(on)=4.8 m IPB048N15N5LF RDS(on)=4.8 m IPB072N15N3 G RDS(on) =7.2 m IPB073N15N5 RDS(on)=7.3 m IPB083N15N5LF RDS(on)=8.3 m IRF135S203 5) RDS(on) =8.4 m IPB044N15N5 RDS(on)=4.4 m IRF135SA204 5) RDS(on) =5.9 m IPB060N15N5 RDS(on)= 6.0 m IPB065N15N3 G RDS(on) =6.5 m IPB108N15N3 G RDS(on) =10.8 m IRFS4321 RDS(on) =15.0 m IRFS4115TRLPBF RDS(on) =12.1 m IPB200N15N3 G RDS(on) =20.0 m IRFS4615PBF RDS(on) =42.0 m IRFS5615PBF RDS(on) =42.0 m IPB530N15N3 G RDS(on) =53.0 m IRFS4115TRL7PP RDS(on) =11.8 m IRFS4321TRL7PP RDS(on) =14.7 m SuperSO8 TO-251 (IPAK) TO-262 (I2PAK) TO-220 FullPAK IPI051N15N5 RDS(on)=5.1 m IPP051N15N5 2) RDS(on)=5.1 m IPI075N15N3 G RDS(on) =7.5 m IPI076N15N5 RDS(on)=7.6 m IPP075N15N3 G RDS(on) =7.5 m IPP076N15N5 RDS(on)=7.6 m IPI111N15N3 G RDS(on) =11.1 m IRFH5015TRPBF RDS(on) =31.0 m IRFU4615PBF RDS(on) =42.0 m IRFH5215TRPBF RDS(on) =58.0 m TO-220 IPI530N15N3 G 2) RDS(on) =53.0 m TO-247 IRF150P220 RDS(on)=2.5m IRF150P221 RDS(on)=4.8m IRFP4568PBF RDS(on) =5.9 m IPA075N15N3 G RDS(on) =7.5 m IRF135B203 5) RDS(on) =8.4 m IRFB4115PBF RDS(on) =11.0 m IPP111N15N3 G IPA105N15N3 G RDS(on) =11.1 m RDS(on) =10.5 m IRFB4321PBF RDS(on) =15.0 m IRFB4228PBF RDS(on) =15.0 m IPP200N15N3 G 2) RDS(on) =20.0 m IRFB4615PBF RDS(on) =39.0 m IRFB5615PBF RDS(on) =39.0 m IPP530N15N3 G 2) RDS(on) =53.0 m IRFB4019PBF RDS(on) =95.0 m IRFP4321PBF RDS(on) =15.5 m www.infineon.com/powermosfet-12V-300V 110 2) 8 V rated (RDS(on) also specified @ VGS = 8 V) 3) Coming soon 5) 135 V For more details on the product, click on the part number. OptiMOSTM and StrongIRFETTM 200V normal level TO-262 (I2PAK) TO-220 TO-220 FullPAK TO-247 IRF200P222 RDS(on)=6.6 m IRFP4668PBF RDS(on) =9.7 m IRF200P223 RDS(on)=11.5 m 4-10 10-25 >25 IPD320N20N3 G RDS(on) =32.0 m IPI110N20N3 G RDS(on) =11.0 m IPI320N20N3 G RDS(on) =32.0 m IRFS4620TRLPBF RDS(on) =78.0 m IRFS4020TRLPBF RDS(on) =105.0 m IPP110N20N3 G RDS(on) =11.0 m IPP110N20NA RDS(on) =11.0 m IPP120N20NFD RDS(on) =12.0 m IRFB4127PBF RDS(on) =20.0 m IRFB4227PBF RDS(on) =26.0 m IPP320N20N3 G RDS(on) =32.0 m IRFB4620PBF RDS(on) =72.5 m IRFB5620PBF RDS(on) =72.5 m IRFB4020PBF RDS(on) =100.0 m IRF200B211 RDS(on) =170.0 m IRFP4127PBF RDS(on) =21.0 m IRFP4227PBF RDS(on) =25.0 m IPA320N20NM3S RDS(on) =32.0 m IRFI4020H-117P RDS(on) =100 m, HB Intelligent switches and input ICs Power ICs IRFR4620TRLPBF RDS(on) =78.0 m IPB107N20N3 G RDS(on) =10.7 m IPB107N20NA 4) RDS(on) =10.7 m IPB110N20N3LF RDS(on)=11.0 m IPB117N20NFD RDS(on) =11.7 m IPB156N22NFD 2) RDS(on) =15.6 m IRFS4127TRLPBF RDS(on) =22.0 m IRFS4227TRLPBF RDS(on) =26.0 m IPB320N20N3 G RDS(on) =32.0 m 500-950 V MOSFETs TO-263 (D2PAK) WBG semiconductors TO-252 (DPAK) Discrete IGBTs RDS(on), max. @VGS=10V [m] Applications 20-300 V MOSFETs Product portfolio OptiMOSTM and StrongIRFETTM 200V normal level PQFN 3.3 x 3.3 10-25 >25 IRF6641TRPBF RDS(on) =59.9 m BSC220N20NSFD RDS(on)=22.0 m BSC320N20NS3 G RDS(on) =32.0 m BSC350N20NSFD RDS(on)=35.0 m BSC500N20NS3G RDS(on) =50.0 m IRFH5020 RDS(on) =55.0 m BSC900N20NS3 G RDS(on) =90.0 m BSC12DN20NS3 G RDS(on) =125.0 m BSC22DN20NS3 G RDS(on) =225.0 m SO-8 TO-Leadless IPT111N20NFD RDS(on)=11.1 m IRF7820TRPBF RDS(on) =78.0 m XENSIVTM sensors IRF6785TRPBF RDS(on) =100.0 m BSZ900N20NS3 G RDS(on) =90.0 m BSZ12DN20NS3 G RDS(on) =125.0 m BSZ22DN20NS3 G RDS(on) =225.0 m SuperSO8 Gate driver ICs DirectFETTM Microcontrollers RDS(on), max. @VGS=10V [m] 2) 220 V rated 4) Part qualified according to AEC Q101 Packages www.infineon.com/powermosfet-12V-300V For more details on the product, click on the part number. 111 Product portfolio OptiMOSTM and StrongIRFETTM 250V normal level RDS(on), max. @VGS=10V [m] TO-252 (DPAK) TO-263 (D2PAK) IPB200N25N3 G RDS(on) =20.0 m TO-262 (I2PAK) IPI200N25N3 G RDS(on) =20.0 m 10-25 >25 IPD600N25N3 G RDS(on) =60.0 m IRFS4229TRLPBF RDS(on) =48.0 m IPB600N25N3 G RDS(on) =60.0 m IPI600N25N3 G RDS(on) =60.0 m TO-220 TO-220 FullPAK IPP200N25N3 G RDS(on) =20.0 m IPP220N25NFD RDS(on) =22.0 m IRFB4332PBF RDS(on) =33.0 m IRFB4229PBF RDS(on) =46.0 m IPP600N25N3 G RDS(on) =60.0 m TO-247 PQFN 3.3 x 3.3 IRF250P224 RDS(on)=12.0 m IRFP4768PBF RDS(on) =17.5 m IRF250P225 RDS(on)=22.0 m IRFP4229PBF RDS(on) =46.0 m TO-Leadless IPT210N25NFD RDS(on)=21.0 m BSZ16DN25NS3 G RDS(on) =165.0 m BSC430N25NSFD RDS(on)=43.0 m BSC600N25NS3 G RDS(on) =60.0 m BSC670N25NSFD RDS(on)=67.0 m IRFH5025 RDS(on) =100.0 m BSZ42DN25NS3 G RDS(on) =425.0 m BSC16DN25NS3 G RDS(on) =165.0 m IRFP4332PBF RDS(on) =33.0 m IPA600N25NM3S RDS(on)=60.0 m SuperSO8 OptiMOSTM and StrongIRFETTM 300V normal level RDS(on), max. @ VGS=10V [m] TO-263 (D2PAK) TO-220 0-25 IPB407N30N RDS(on) =40.7 m IPP410N30N RDS(on) =41.0 m >25 IRFB4137PBF RDS(on) =69.0 m TO-247 IRF300P226 RDS(on)=19.0 m IRFP4868PBF RDS(on) =32.0 m IRF300P227 RDS(on)=40.0 m IRFP4137PBF RDS(on) =69.0 m SuperSO8 BSC13DN30NSFD RDS(on)=130.0 m www.infineon.com/powermosfet-12V-300V For more details on the product, click on the part number. 112 Applications 20-300 V MOSFETs 500-950 V MOSFETs WBG semiconductors Discrete IGBTs 11-30 BSZ15DC02KD H */ * * N: 55 m, 5.1 A P: 150 m, -3.2 A BSZ215C H */ * * N: 55 m, 5.1 A P: 150 m, -3.2 A BSO612CV G * N: 0.12 , 3.0 A P: 0.30 , -2.0 A BSO615C G * N: 0.11 , 3.1 A P: 0.30 , -2.0 A XENSIVTM sensors Microcontrollers Gate driver ICs -60/60 >50 m SO-8 Intelligent switches and input ICs -20/20 PQFN 3.3 x 3.3 www.infineon.com/complementary *Products are qualified to Automotive AEC Q101 * *RDS(on) specified at 4.5 V Packages Complementary Voltage [V] Power ICs Power MOSFETs complementary For more details on the product, click on the part number. 113 Product portfolio Power P-channel MOSFETs Voltage [V] TO-252 (DPAK) TO-263 (D2PAK) TO-220 DirectFETTM PQFN 3.3 x 3.3 SuperSO8 IRLHS2242TRPBF * * RDS(on) =31.0 m BSC030P03NS3 G RDS(on) =3.0 m BSC060P03NS3E G RDS(on) =6.0 m; ESD IPD042P03L3 G RDS(on) =4.2 m SPD50P03L G 1) * RDS(on) =7.0 m IRF9395M RDS(on)=7.0 m; dual BSZ086P03NS3 G RDS(on) =8.6 m BSZ086P03NS3E G RDS(on) =8.6 m BSC084P03NS3 G RDS(on) =8.4 m BSC084P03NS3E G RDS(on) =8.4 m; ESD BSZ120P03NS3 G RDS(on) =12.0 m BSZ120P03NS3E G RDS(on) =12.0 m; ESD -30 P-channel MOSFETs IRFHM9331 2) RDS(on)=15 m BSZ180P03NS3 G RDS(on) =18.0 m BSZ180P03NS3E G RDS(on) =18.0 m; ESD -100 PQFN 2 x 2 BSO201SP H RDS(on) =7.0 m BSO203SP H RDS(on) =21.0 m BSO203P H RDS(on) =21.0 m -20 -60 SO-8 IPD380P06NM RDS(on)= 38 m IPD650P06NM RDS(on)= 65 m SPD30P06P G * RDS(on) =75.0 m IPD900P06NM RDS(on) = 90 m SPD18P06P G * RDS(on) =130.0 m SPD09P06PL G * RDS(on) =250.0 m IPD25DP06LM RDS(on) = 250 m IPD25DP06NM RDS(on) = 250 m SPD08P06P G * RDS(on) =300.0 m IPB110P06LM RDS(on)= 11 m SPB80P06P G * RDS(on) =23.0 m SPP80P06P H * RDS(on) =23.0 m SPB18P06P G * RDS(on) =130.0 m SPP18P06P H * RDS(on) =130.0 m SPB08P06P G */ * * * RDS(on) =300.0 m SPP08P06P H * RDS(on) =300.0 m IPD40DP06NM RDS(on) = 400 m SPD15P10PL G * RDS(on) =200.0 m SPD15P10P G * RDS(on) =240.0 m SPD04P10PL G * RDS(on) =850.0 m SPD04P10P G * RDS(on) =1000.0 m BSO207P H RDS(on) =45.0 m BSO211P H RDS(on) =67.0 m IRF9310 RDS(on)=4.6 m IRF9317 RDS(on)=6.6 m IRF9321 RDS(on)=7.2 m BSO080P03NS 3 G RDS(on) =8.0 m BSO080P03NS3E G RDS(on) =8.0 m; ESD BSO080P03S H RDS(on) =8.0 m BSO301SP H RDS(on) =8.0 m IRF9328 RDS(on)=11.9 m IRF9388TRPBF RDS(on)=11.9 m BSO130P03S H RDS(on) =13.0 m IRF9358 RDS(on)=16 m; dual IRF9332 RDS(on)=17.5 m IRF9392TRPBF * * * RDS(on)= 17.5 m IRF9333 RDS(on)=19.4 m BSO200P03S H RDS(on) =20.0 m BSO303SP H RDS(on) =21.0 m BSO303P H RDS(on) =21.0 m; dual IRF9362 RDS(on)=21 m; dual IRF9335 RDS(on)=59 m IRFH9301TRPBF * * * RDS(on) =37.0 m IRFHS9351TRPBF RDS(on) =170.0 m; dual BSO613SPV G * RDS(on) =130.0 m SPP15P10PL H * RDS(on) =200.0 m SPP15P10P H * RDS(on) =240.0 m www.infineon.com/pchannel 114 * Products are qualified to Automotive AEC Q101 * *RDS(on) specified at 4.5 V * * * For more information on the product, contact our product support 1) 5-leg 2) 2.5 VGS capable For more details on the product, click on the part number. 20 BSL806N ** 82 m, 2.3 A, ULL IRLMS1902 * 1) 100 m, 3.2 A, SLL 25 IRLTS6342 * 1) 17.5 m, 8.3 A, LL IRFTS8342 * 19 m. 8.2 A, NL 30 IRLMS1503 * 100 m, 3.2 A, LL BSL606SN 60 m, 4.5 A, LL BSS606N 60 m, 3.2 A, LL 60 75 100 BSP716N 160 m, 2.3 A, LL BSP372N 230 m, 1.8 A, LL BSP373N 240 m, 1.8 A, NL 200 240 BSP297 1.8 , 0.66 A, LL BSP149 3.5 ,0.14 A, depl. BSP88 6 , 0.35 A, 2.8 V rated BSP89 6 , 0.35 A, LL BSP129 6 , 0.05 A, depl. BSD316SN 160 m, 1.4A, LL BSS340NW 400 m, 0.88 A, LL BSS138W 3.5 , 0.28 A, LL SN7002W 5 , 0.23 A, LL 2N7002DW 3 , 0.3 A, LL, dual IRF5802 * 1.2 m, 0.9 A, NL IRF5801 * 2.2 m, 0.6 A, NL BSS87 6 , 0.26 A, LL BSS131 14 , 0.1 A, LL BSS139 30 , 0.03 A, depl. 250 400 BSD235N 350 m, 0.95 A, SLL, dual BSD840N 400 m, 0.88 A, ULL, dual IRLML0100 * 220 m, 1.6 A, LL BSS119N 6 , 0.19 A, LL VGS(th) 1.8 V to 2.3 V BSS123N 6 , 0.19 A, LL VGS(th) 0.8 V to 1.8 V BSS169 12 , 0.09 A, depl. BSP296N 600 m, 1.2 A, LL 150 BSS214NW 140 m, 1.5 A, SLL BSS816NW 160 m, 1.4 A, ULL Gate driver ICs BSP318S 90 m, 2.6 A, LL BSP320S 120 m, 2.9 A, NL BSP295 300 m, 1.8 A, LL BSD214SN 140 m, 1.5 A, SLL BSP324 25 , 0.17 A, LL 500 600 BSP125 45 , 0.12 A, LL BSP135 60 , 0.02 A, depl. BSS225 45 , 0.09 A, LL BSS127 500 , 0.023 A, LL BSS126 700 , 0.007 A, depl. 800 www.infineon.com/smallsignal All products are qualified to Automotive AEC Q101 (except 2N7002) (except the parts marked with *) 1) RDS(on) specified at 4.5 V ** For more information on the product, contact our product support Packages N-channel 55 SOT-363 500-950 V MOSFETs BSL202SN 22 m, 7.5 A, SLL IRLMS2002 * 1) 30 m, 6.5 A, SLL IRLML6244 * 1) 21 m, 6.3 A, LL IRLML2502 * 1) 45 m, 4.2 A, SLL IRLML6246 * 1) 46 m, 4.1 A, LL BSS205N 50 m, 2.5 A, SLL BSS806NE 57 m, 2.3 A, ULL, ESD BSS806N 57 m, 2.3 A, ULL BSS214N 140 m, 1.5 A, SLL IRLML2402 * 1) 250 m, 1.2 A, SLL IRFML8244 * 24 m, 5.8 A, NL IRLML0030 * 27 m, 5.3 A, LL IRLML6344 * 1) 29 m, 5.0 A, LL BSS306N 57 m, 2.3 A, LL IRLML6346 * 1) 63 m, 3.4 A, LL IRLML2030 * 100 m, 1.4 A, LL BSS316N 160 m, 1.4 A, LL IRLML2803 * 250 m, 1.2 A, LL IRLML0040TRPBF * 56 m,3.6 A, LL BSS670S2L 650 m, 0.54 A, LL IRLML0060 * 92 m, 2.7 A, LL IRLML2060 * 480 m, 1.2 A, LL BSS138N 3.5 , 0.23 A, LL BSS7728N 5 , 0.2 A, LL SN7002N 5 , 0.2 A, LL 2N7002 3 , 0.3 A, LL BSS159N 8 , 0.13 A, depl. SOT-323 WBG semiconductors BSR802N 23 m, 3.7 A, ULL BSR202N 21 m, 3.8 A, SLL SOT-23 Discrete IGBTs SC59 Power ICs SOT-89 Intelligent switches and input ICs TSOP-6 Microcontrollers SOT-223 XENSIVTM sensors Voltage [V] 20-300 V MOSFETs Small signal/small power N-channel Applications Product portfolio For more details on the product, click on the part number. 115 Product portfolio Small signal/small power P-channel Voltage [V] -250 -100 P-channel MOSFETs -60 SOT-223 TSOP-6 BSP317P 4 , -0.43 A, LL BSP92P 12 , -0.26 A, LL BSP321P 900 m, -0.98 A, NL BSP322P 800 m, -1.0 A, LL BSP316P 1.8 , -0.68 A, LL ISP650P06NM 65 m, -3.7 A, NL ISP12DP06NM 125 m, -2.8 A, NL ISP13DP06NMS 125 m, -2.8 A, NL BSP613P 130 m, 2.9 A, NL ISP25DP06LM 250 m, -1.9 A, LL ISP25DP06NM 250 m, -1.9 A, NL ISP25DP06LMS 250 m, -1.9 A, LL ISP26DP06NMS 260 m, -1.9 A, NL BSP171P 300 m, -1.9 A, LL BSP170P 300 m, -1.9 A, NL ISP75DP06LM 750 m, -1.1 A, LL SOT-89 BSS192P 12 , -0.19 A, LL SC59 SOT-23 SOT-323 SOT-363 BSR92P 11 , -0.14 A, LL BSR316P 1.8 , -0.36 A, LL ISS17EP06LM 1.7, -0.3 A, LL BSS83P 2 , -0.33 A, LL ISS55EP06LM 5.5 , -0.18 A, NL BSS84PW 8 , -0.15 A, LL BSS84P 8 , -0.17 A, LL BSR315P 800 m, -0.62 A, LL BSP315P 800 m, -1.17 A, LL IRF5803TRPBF * 112 m, -3.4 A, LL IRFTS9342TRPBF * 40 m, -5.8 A, LL BSL307SP 43 m, -5.5 A, LL BSL308PE 80 m, -2.1 A, LL, dual, ESD -40 IRLML9301TRPBF * 64 m, -3.6 A, LL BSS308PE 80 m, -2.1 A, LL, ESD IRLML5203TRPBF * 98 m, -3.0 A, LL BSS314PE 140 m, -1.5 A, LL, ESD BSS315P 150 m, -1.5 A, LL IRLML9303TRPBF * 165 m, -2.3 A, LL IRLML5103TRPBF * 600 m, -0.76 A, LL -30 IRLTS2242 * 1) 32 m, -6.9 A, SLL BSL207SP 1) 41 m, -6 A, SLL IRLMS6802 * 1) 50 m, -5.6 A, SLL BSL211SP 1) 67 m, -4.7 A, SLL IRLMS6702 * 1) 200 m, -2.4 A, SLL -20 BSD314SPE 140 m, -1.5 A, LL, ESD IRLML2244 * 1) 54 m, 4.3 A, LL IRLML6402 * 1) 65 m, -3.7 A, SLL IRLML2246 * 1) 135 m, 2.6 A, LL BSS215P 1) 150 m, -1.5 A, SLL IRLML6302 * 1) 600 m, -0.78 A, SLL IRLML6401 * 1) 50 m, -4.3 A, SLL -12 BSS209PW 1) 550 m, -0.58 A, SLL BSS223PW 1) 1.2 , -0.39 A, SLL BSV236SP 1) 175 m, -1.5 A, SLL BSD223P 1) 1.2 , -0.39 A, SLL, dual Small signal/small power complementary Complementary Voltage [V] -20/20 -30/30 TSOP-6 BSL215C N: 140 m, 1.5 A, SLL P: 150 m, 1.5 A, SLL BSL308C N: 57 m, 2.3 A, LL P: 80 m, -2.0 A, LL BSL316C N: 160 m, 1.4 A, LL P: 150 m, -1.5 A, LL SOT-363 BSD235C N: 350 m, 0.95 A, SLL P: 1.2 , 0.53 A, SLL www.infineon.com/smallsignal All products are qualified to Automotive AEC Q101 (except the parts marked with *) 1) RDS(on) 4.5 V rated 116 For more details on the product, click on the part number. Die Size Y Die Size Area IPC042N03L3 * 0.83 m 2.78 mm 1.53 mm 4.25 mm IPC055N03L3 * 2.7 m 3.28 mm 1.68 mm 5.51 mm IPC028N03L3 * 5 m 1.24 mm 2.26 mm 2.80 mm IPC022N03L3 * 5.3 m 1.05 mm 2.1 mm 2.2 mm IPC014N03L3 * 10.3 m 1.64 mm 0.84 mm 1.37 mm 40 V IPC218N04N3 0.9 m 5.9 mm 3.7 mm 21.83 mm 60 V IPC218N06N3 1.3 m 5.9 mm 3.7 mm 21.83 mm 75 V IPC302NE7N3 1.2 m 6.7 mm 4.5 mm 30.15 mm 80 V IPC302N08N3 1.2 m 6.7 mm 4.5 mm 30.15 mm IPC302N10N3 1.7 m 6.7 mm 4.5 mm 30.15 mm IPC313N10N3R 1.9 m 6 mm 5.2 mm 31.26 mm IPC26N10NR 3.2 m 6 mm 4.36 mm 26.16 mm IPC173N10N3 3.6 m 5.76 mm 3 mm 17.28 mm IPC045N10N3 15.2 m 2.5 mm 1.8 mm 4.5 mm IPC045N10L3 * 16 m 2.5 mm 1.8 mm 4.5 mm IPC020N10L3 * 42 m 2.12 mm 0.96 mm 2.04 mm IPC302N12N3 2.5 m 6.7 mm 4.5 mm 30.15 mm IPC26N12N 3 m 6.6 mm 3.96 mm 26.13 mm IPC26N12NR 3.2 m 6 mm 4.36 mm 26.16 mm IPC331N15NM5R 2.9 m 7.05 mm 4.7 mm 33.14 mm IPC302N15N3 4.9 m 6.7 mm 4.5 mm 30.15 mm IPC300N15N3R 4.9 m 6 mm 5 mm 30 mm IPC300N20N3 9.2 m 6 mm 5 mm 30 mm IPC302N20N3 9.2 m 6.7 mm 4.5 mm 30.15 mm IPC302N20NFD 9.4 m 6.7 mm 4.5 mm 30.15 mm IPC302N25N3 16 m 6.7 mm 4.5 mm 30.15 mm 30 V 100 V 120 V 150 V 200 V XENSIVTM sensors Microcontrollers Gate driver ICs Intelligent switches and input ICs 250 V 500-950 V MOSFETs Die Size X WBG semiconductors RDS(on) typ. @ VGS=10 V Discrete IGBTs Part number Power ICs V(BR)DSS 20-300 V MOSFETs Bare Die Applications Product portfolio *RDS(on) typ. @VGS=4.5 V Packages www.infineon.com/baredie For more details on the product, click on the part number. 117 StrongIRFETTM nomenclature Nomenclature OptiMOSTM BSC 014 N 03 S L X Package type BSB = DirectFETTM (M Can) BSC = SuperSO8 BSF = DirectFETTM (S Can) BSK = PQFN 2 x 2 BSO = SO-8 BSZ = PQFN 3.3 x 3.3 IPA = FullPAK SPB/IPB = D2PAK IPC = Chip product SPD/IPD = DPAK IPI = I2PAK SPP/IPP = TO-220 IPS = IPAK Short Leads IPT = TO-Leadless E G RoHS compliant Features F = Fast switching R = Integrated gate resistor E = ESD protection A = Qualified according to AEC Q101 3 = Technology generation I = Monolithically integrated Schottky-like diode FD = Fast diode LF = Linear mode capability Package options SO-8/SuperSO8/PQFN 3.3 x 3.3/PQFN 2 x 2 S = Single chip D = Dual chip RDS(on) [m] Divide by 10 to get RDS(on) value e.g. 014 = 1.4 m DirectFETTM X = MX footprint N = MN footprint Z = MZ footprint Q = SQ footprint T = ST footprint H = SH footprint J = SJ footprint However, if the sixth character is a C, the fourth and the fifth character indicate the RDS(on) e.g. 12C = 12 m For chip products chip area in mm2 multiplied by 10 N = N-channel P = P-channel C = Complementary Level N = Normal level M = Logic level 5 V opt. L = Logic level K = Super logic level J = Ultra logic level Breakdown voltage [V] Multiply by 10 to get voltage class e.g. 03 = 30 V E = Extended, +5 V, e.g. E2 = 25 V (NL) (LL) (ELL) (SLL) (ULL) to be used from VGS 10.0 4.5 4.5 2.5 1.8 OptiMOSTM 30V BSC Package type Consecutive number without any correlation to product specification 0901 N X I I = Monolithically integrated Schottky-like diode D = Dual E = ESD S = Single Channels N = N-channel P = P-channel For more details on the product, click on the part number. 118 J2 Z 500-950 V MOSFETs Y Additional features E = ESD protected MOSFET 3 digits product identifier meaning dependent on product generation Only present in following case W = to distinguish SOT-323 from SOT-23 Only present in following case S = Single (only for packages which are also used for multichip products) Polarity N = N-channel P = P-channel C = Complementary (N-ch + P-ch) Discrete IGBTs "X" indicates the package D = SOT-363 P = SOT-223 R = SC59 S = SOT-89, SOT-23, SOT-323 L = TSOP-6 WBG semiconductors J1 BSX 20-300 V MOSFETs Small signal Applications OptiMOSTM nomenclature IR F 135 SA Power ICs StrongIRFETTM (from May 2015 to 2019) 204 Gate driver ICs Microcontrollers XENSIVTM sensors 2 to 3 digit voltage For example: 25 = 25 V 135 = 135 V Package 1 or 2 letters B = TO-220 BA = Super220 C = Bare die or wafer DL = DirectFETTM 1.5 Large Can DM = DirectFETTM 1.5 Medium Can Can DS = DirectFETTM 1.5 Small Can Can FF = TO-220 FullPAK H = PQFN 5 x 6 HB = Power Block 5 x 6 HM = PQFN 3.0 x 3.0 or 3.3 x 3.3 HS = PQFN 2 x 2 I = TO-220 FullPAK K = SO-8 L = SOT-223 ML = SOT-23 P = TO-247 PS = Super247 R = DPAK S = D2PAK SL = TO-262 SA = D2 7-pin with pin 2 void SN = D2 7-pin with pins void SC = D2 7-pin with pin 4 void T = TollFET TS = TSOP-6 U = IPAK Packages Drive voltage F = 4.5 VGS capable for BV 30 V L = 2.5 VGS capable for BV 30 V, 4.5 VGS capable for BV 40 V Intelligent switches and input ICs 3 sequential digits 3 digits issued sequentially For more details on the product, click on the part number. 119 New Nomenclature 2019 onward New nomenclature for OptiMOSTM and StrongIRFETTM MOSFETs (2019 onward) I SC Infineon Package type SC = SuperSO8 SD = SOT-363 SL = TSOP-6 SK = PQFN 2x2 SO = SO-8 SP = SOT-223 SQ = CE2 SR = SC59 SS = SOT-89, SOT-23, SOT-323 ST = sTOLL SZ = PQFN 3.3 x 3.3 PA = TO-220 FullPAK PB = DPAK PC = Chip Product PD = DPAK PF = D2PAK-7Pin PI = IPAK PP = TO-220 PS = IPAK Short Leads PT = TO-Leadless PW = TO-247 QA = PQFN 4.5x4 QB = PQFN 3x2 QC = PQFN 3x5 QD = PQFN 5x6 Source-Down QE = PQFN 3.3 x 3.3 Source-Down WS = DirectFETTM (S) WM = DirectFETTM (M) WL = DirectFETTM (L) RDS(on) [m] Divide by 10 to get RDS(on) value e.g. 012 = 1.2 m 010 N 25 L I Features D = Dual H = Halfbridge M|F... Product brand - family (M.. OptiMOSTM, F...StrongIRFETTM) 3 = Marketing generation with branding strategy CG = Center gate E = ESD protection F = Fast switchingFD = Fast diode SC = Super Cool I = Monolithically integrated Schottky like diode LF = Linear mode R = Integrated gate resistor Last letter: requirement category: A = Qualified according to AECQ 101 S = Standard None = Industrial Level To be used for VGS N = Normal level L = Logic level M = Logic level 5 V opt. K = Super logic level J = Ultra logic level (NL) 10.0 V (LL) 4.5 V (ELL) 4.5 V (SLL) 2.5 V (ULL) 1.8 V Breakdown voltage [V] Divide by 10 e.g. E2 = 25 V 10 = 100 V 25 = 250 V However, if the sixth character is D or E the fourth and the fifth characters indicate the RDS(on) e.g. 12D = 120 m 12E = 1200 m For chip products chip area in mm2 multiplied by 10 Version N = N-channel P = P-channel C = Complementary G = GaN For more details on the product, click on the part number. 120 Applications 20-300 V MOSFETs 500-950 V MOSFETs WBG semiconductors Discrete IGBTs Power ICs Useful links and helpful information Microcontrollers Gate driver ICs Further information, data sheets and documents www.infineon.com/powermosfet-12V-300V www.infineon.com/smallsignal www.infineon.com/pchannel www.infineon.com/depletion www.infineon.com/complementary www.infineon.com/baredie Intelligent switches and input ICs Infineon support for low voltage MOSFETs XENSIVTM sensors Evaluation boards and simulation models www.infineon.com/to-leadless-evaluationboard www.infineon.com/powermosfet-simulationmodels Packages Simulation For more details on the product, click on the part number. 121 500-950 V MOSFETs 500-950 V MOSFETs CoolMOSTM SJ MOSFETs 950 V CoolMOSTM P7 SJ MOSFETs 800 V CoolMOSTM P7 SJ MOSFETs 700 V CoolMOSTM P7 SJ MOSFETs 600 V CoolMOSTM P7 SJ MOSFETs 600 V CoolMOSTM PFD7 SJ MOSFETs 600 V and 650 V CoolMOSTM C7 and 600 V CoolMOSTM S7 SJ MOSFETs 600 V CoolMOSTM CFD7 SJ MOSFETs CoolMOSTM CE SJ MOSFETs CoolMOSTM SJ MOSFETs - package innovations CoolMOSTM SJ MOSFETs for automotive CoolMOSTM product portfolio C7 Gold (G7) SJ MOSFETs For more details on the product, click on the part number. 122 Packages For more details on the product, click on the part number. 123 XENSIVTM sensors Microcontrollers Gate driver ICs Intelligent switches and input ICs Power ICs Discrete IGBTs WBG semiconductors 500-950 V MOSFETs 20-300 V MOSFETs Applications CoolMOSTM SJ MOSFETs CoolMOSTM SJ MOSFETs Trusted leader in high voltage MOSFETs The revolutionary CoolMOSTM power MOSFET sets new standards in the field of energy efficiency. Our CoolMOSTM products offer a significant reduction of conduction, switching and driving losses, and enable high power density as well as efficiency for superior power conversion systems. CoolMOSTM superjunction MOSFETs for consumer applications (<400 W) CoolMOSTM superjunction MOSFETs for industrial applications (>250 W) and automotive 600/650 V G7 950 V P7 1) 900 V C3 600/650 V C7 800 V P7 1) 800 V CE 600 V P7 600 V P6 800 V C3 600 V S7 700 V P7 1) 650/700 V CE 600 V CFD7 600 V PFD7 650 V CFD2 600 V CE 600 V P7 600 V CPA 600 V CFD7A 600 V P6 500 V CE 650 V CFDA 800 V C3A Active Active and preferred Active Active and preferred Time 1) Optimized for flyback topologies Time Price-performance CoolMOSTM low power package innovations Click to learn more Highest performance Fast recovery diode Automotive Slow switching CoolMOSTM high power package innovations Click to learn more High voltage superjunction MOSFETs address consumer applications, such as smartphone/tablet chargers, notebook adapters, LED lighting, PC power, as well as audio and TV power supplies. Customers are increasingly replacing standard MOSFETs with superjunction MOSFETs to benefit from higher efficiency and lower power consumption for end users. CoolMOSTM P7 sets a new benchmark by offering high performance and competitive price all at once. CoolMOSTM PFD7 as brand new series shifts the state-of-the-art for high density chargers/adapters as well as low-power motor drives. Also for industrial applications such as server, telecom, PC power, solar, UPS, EV-charging and others, Infineon's latest CoolMOSTM7 superjunction MOSFETs with C7, G7, CFD7 and P7 product families offer what you need - from highest efficiency to best price performance. Complementary to the silicon CoolMOSTM portfolio, Infineon offers a broad wide bandgap (WBG) portfolio of CoolGaNTM e-mode HEMTs and CoolSiCTM MOSFETs to further optimize efficiency and system cost (see pages 154-172). Infineon's industrial- and consumer-qualified CoolMOSTM superjunction MOSFET offering is complemented by the automotive qualified series 600 V CPA, 650 V CFDA, 800 V C3A and our latest 650 V CFD7A. Gain your momentum in the rapidly growing on-board charger and DC-DC converter markets with our excellent performing automotive series with proven outstanding quality standards that go well beyond AEC Q101. www.infineon.com/coolmos For more details on the product, click on the part number. 124 20-300 V MOSFETs 950 V CoolMOSTM P7 SJ MOSFETs Perfect fit for PFC and flyback topologies WBG semiconductors Relative efficiency @ 90 VAC (ref: IPA95R450P7) Temperature @ 90 VAC 0.2 5.2C 0.0 Efficiency [%] 55 50 45 40 5 10 15 20 25 30 35 -0.2 40 0.2% -0.4 -0.6 35 -0.8 25 5 10 15 IPA95R450P7 20 25 Pout [W] IPA90R500C3 30 35 40 -1.0 Power ICs 30 Pout [W] Competitor IPA95R450P7 IPA90R500C3 Competitor Gate driver ICs 1250 m 1200 m 1200 1000 -65% 800 600 450 m Best-in-class DPAK RDS(on) Customer benefits: Possible change from leaded to SMD packages High power density Lower BOM cost Lower production cost Microcontrollers 1400 Intelligent switches and input ICs Compared to competition, the 950 V CoolMOSTM P7 delivers best-in-class efficiency and thermal performance. Plug-and-play at 90 VAC in a 40 W adapter reference design, featuring the snubberless concept, demonstrates excellent efficiency gains of up to 0.2 % and lower MOSFET temperature of up to 5.2C compared to similar competitor technology. With over 20 years of experience in superjunction technology, Infineon introduces 950 V CoolMOSTM P7 with best-in-class DPAK on-resistance (RDS(on)). This SMD device comes with the RDS(on) of 450 m - more than 60% lower RDS(on) compared to the nearest competitor. Such low RDS(on) value enables higher density designs while decreasing BOM and assembly cost. RDS(on) [m] Discrete IGBTs 60 Temperature [C] 500-950 V MOSFETs Designed to meet the growing consumer needs in the high voltage MOSFETs arena, the latest 950 V CoolMOSTM P7 technology focuses on the low-power SMPS market. The P7 family addresses applications ranging from lighting, smart meter, mobile phone charger, notebook adapter, to AUX power supply and industrial SMPS. Offering 50 V more blocking voltage than its predecessor 900 V CoolMOSTM C3, the 950 V CoolMOSTM P7 series delivers outstanding performance in terms of efficiency, thermal behavior and ease of use. As all other P7 family members, the 950 V CoolMOSTM P7 series comes with an integrated Zener diode ESD protection. The integrated diode considerably improves ESD robustness, thus reducing ESD-related yield loss and reaching exceptional ease-of-use levels. CoolMOSTM P7 is developed with best-in-class threshold voltage (VGS(th)) of 3 V and a narrow tolerance of only 0.5 V, which makes it easy to drive and design-in. 65 Applications 950 V CoolMOSTM P7 SJ MOSFETs XENSIVTM sensors 400 200 0 Competitor CoolMOSTM C3 CoolMOSTM P7 Charger Packages www.infineon.com/950v-p7 For more details on the product, click on the part number. 125 800 V CoolMOSTM P7 SJ MOSFETs 800 V CoolMOSTM P7 SJ MOSFETs A benchmark in efficiency and thermal performance With the 800 V CoolMOSTM P7 series, Infineon sets a benchmark in 800 V superjunction technologies and combines best-in-class performance with the remarkable ease of use. This product family is a perfect fit for flyback-based consumer and industrial SMPS applications. In addition, it is also suitable for PFC stages within consumer, as well as solar applications, fully covering the market needs in terms of its price/performance ratio. The technology offers fully optimized key parameters to deliver best-in-class efficiency as well as thermal performance. As demonstrated on an 80 W LED driver, bought on the market, the >45 percent reduction in switching losses (Eoss) and output capacitance (Coss) as well as the significant improvement in input capacitance (Ciss) and gate charge (QG), compared to competitor technologies, lead to 0.5 percent higher efficiency at light load which helps to reduce standby power in the end application. At full load, the observed improvement is up to 0.3 percent higher efficiency and 6C lower device temperature. Relative efficiency [%] Plug and play in an 80 W LED driver from market 800 V CoolMOSTM exceptional EMI performance 0.6 60 0.5 50 0.4 40 30 0.3 0.5% 20 0.2 0.3% 10 0.1 0 0 0 10 20 30 40 50 60 70 80 90 30 Frequency [MHz] 300 Pout [W] CoolMOSTM P7 CoolMOSTM C3 Competitor 1 CoolMOSTM C3 Competitor 2 CoolMOSTM P7 Competitor 1 Competitor 2 EMI is a system level topic, and the optimization needs to be done on the system level only. Nevertheless, a pure plug-and-play measurement on Infineon's 45 W adapter reveals that 800 V CoolMOSTM P7 shows similar EMI performance to Infineon's previous technologies as well as to competitors' technologies. Compared to competition, the 800 V CoolMOSTM P7 technology allows to integrate much lower RDS(on) values into small packages, such as a DPAK. This finally enables high power density designs at highly competitive price levels. Overview of lowest DPAK RDS(on) for 800 V superjunction MOSFET CoolMOSTM P7 sets a new benchmark in best-in-class DPAK RDS(on) 850 m 630 m Customer benefits: 450 m -56% 360 m 280 m Competitor 2 Competitor 1 CoolMOSTM P7 CoolMOSTM P7 High power density Lower BOM cost Lower production cost CoolMOSTM P7 The complete P7 platform has been developed with an integrated Zener diode that is used as an electrostatic discharge (ESD) protection mechanism, which increases the overall device ruggedness up to Human body model (HBM) class 2 level. www.infineon.com/800V-p7 For more details on the product, click on the part number. 126 20-300 V MOSFETs 700 V CoolMOSTM P7 SJ MOSFETs Our solution for flyback topologies 18 0.0 16 10 8 6 3.5 4 -4.0 2 -4.5 0.5 1.0 1.5 2.0 2.5 Discrete IGBTs -3.0 12 16 K -2.5 16 13 14 Temp [K] 1.5% -1.0 4% Efficiency [%] -0.5 -2.0 WBG semiconductors Relative temperature @ 230 VAC; Tamb=25C, 30 min burn-in 0.5 -1.5 500-950 V MOSFETs The 700 V CoolMOSTM P7 family has been developed to serve today's and, especially, tomorrow's trends in flyback topologies. The family products address the low power SMPS market, mainly focusing on mobile phone chargers and notebook adapters, but are also suitable for power supplies, used within lighting applications, home entertainment (TV, game consoles or audio), and auxiliary power supplies. 700 V CoolMOSTM P7 achieves outstanding efficiency gains of up to 4 percent and a decrease in device temperature of up to 16 K compared to competition. In contrast with the previous 650 V CoolMOSTM C6 technology, 700 V CoolMOSTM P7 offers 2.4 percent gain in efficiency and 12 K lower device temperature, measured at a flyback-based charger application, operated at 140 kHz switching speed. Relative efficiency @ 230 VAC; Tamb=25C Applications 700 V CoolMOSTM P7 SJ MOSFETs 5 0 CoolMOSTM P7 CoolMOSTM C6 CoolMOSTM P7 CoolMOSTM C6 Competitor 1 Competitor 2 Competitor 1 Competitor 2 VGSth typ. [V] 4.0 3.5 3.0 2.5 2.0 1.5 CoolMOSTM P7 Comp. 1 Comp. 2 Comp. 3 Comp. 4 Comp. 5 Comp. 6 Intelligent switches and input ICs 4.5 Keeping the ease of use in mind, Infineon has developed the technology with a low threshold voltage (VGS(th)) of 3 V and a very narrow tolerance of 0.5 V. This makes the CoolMOSTM P7 easy to design-in and enables the usage of lower gate source voltage, which facilitates its driving and leads to lower idle losses. To increase the ESD ruggedness up to HBM class 2 level, 700 V CoolMOSTM P7 has an integrated Zener diode. This helps to support increased assembly yield, leads to reduction of production related failures and, finally, manufacturing cost savings on customer side. Gate driver ICs Gate threshold voltage and tolerance 5.0 Power ICs Iout [A] Microcontrollers Features and benefits Key features Key benefits Highly performant technology Low switching losses (Eoss) Highly efficient Excellent thermal behavior Cost-competitive technology Allowing high speed switching High ESD ruggedness up to HBM class 2 level Integrated protection Zener diode Easy to drive and design-in Optimized VGS(th) of 3 V with very narrow tolerance of 0.5 V Enabler for smaller form factors and high power density designs Finely graduated portfolio Excellent choice in selecting the best fitting product Further efficiency gain at higher switching speed XENSIVTM sensors Supporting less magnetic size with lower BOM costs Charger Packages www.infineon.com/700V-p7 For more details on the product, click on the part number. 127 600 V CoolMOSTM P7 SJ MOSFETs 600 V CoolMOSTM P7 SJ MOSFETs Perfect combination between high efficiency and ease of use The 600 V CoolMOSTM P7 is a general purpose series, targeting a broad variety of applications, ranging from low power SMPS up to the highest power levels. In the low power arena, it is the successor of the 600 V CoolMOSTM CE, and for high power SPMS applications, it is the replacement for the 600 V CoolMOSTM P6, which makes it the perfect choice for applications such as chargers, adapters, lighting, TV power supply, PC power supply, solar, small light electric vehicles, server power supply, telecom power supply, and electric vehicle (EV) charging. The 600 V CoolMOSTM P7 is Infineon's most well-balanced CoolMOSTM technology in terms of combining the ease of use and excellent efficiency performance. Compared to its predecessors, it offers higher efficiency and improved power density due to the significantly reduced gate charge (QG) and switching losses (EOSS) levels, as well as optimized on-state resistance (RDS(on)). The carefully selected integrated gate resistors enable very low ringing tendency and, thanks to its outstanding robustness of body diode against hard commutation, it is suitable for hard as well as soft switching topologies, such as LLC. In addition, an excellent ESD capabilty helps to improve the quality in manufacturing. The 600 V CoolMOSTM P7 familiy offers a wide range of on-resistance (RDS(on))/package combinations, including THD, as well as SMD devices, at an RDS(on) granularity from 24 to 600 m and comes along with the most competitive price/performance ratio of all 600 V CoolMOSTM offerings. CoolMOSTM P7 CoolMOSTM P6 CoolMOSTM C7 CoolMOSTM CE Efficiency Portfolio Low ringing Commutation ruggedness Price competitiveness ESD Features and benefits Key features Key benefits Suitable for hard and soft switching (PFC and LLC) due to an outstanding commutation ruggedness Ease of use and fast design-in through low ringing tendency and usage across PFC and PWM stages Optimized balance between efficiency and ease of use Improved efficiency and simplified thermal management due to low switching and conduction losses Significant reduction of switching and conduction losses leading to low MOSFET temperature Excellent ESD robustness >2 kV (HBM) for all products Better RDS(on)/package products compared to competition Large portfolio with granular RDS(on) selection qualified for a variety of industrial and consumer applications Higher manufacturing quality due to >2 kV ESD protection Increased power density solutions enabled by using products with smaller footprint Suitable for a wide variety of applications and power ranges Charger www.infineon.com/600V-p7 For more details on the product, click on the part number. 128 20-300 V MOSFETs 600 V CoolMOSTM PFD7 SJ MOSFETs The next level for ultrahigh power density designs 500-950 V MOSFETs The 600 V CoolMOSTM PFD7 MOSFET series sets a new benchmark in 600 V Superjunction (SJ) technologies, suitable for ultrahigh power density designs as well as low power motor drives. It combines best-in-class performance with ease of use, built on Infineon's superjunction technology innovation and more than 20 years of experience. The products come with an integrated fast body diode ensuring a robust device and reduced bill-of-material (BOM). WBG semiconductors This product family offers up to 1.17 % efficiency increase compared to the CoolMOSTM P7 technologies, which leads to a power density increase of 1.8 W. This outstanding improvement is achieved by lower conduction and charge/discharge losses, as well as reduced turn-off and gate-driving losses, enabled by pushing the cutting-edge CoolMOSTM technology to new limits. Discrete IGBTs A broad range of RDS(on) values in combination with a variety of packages, helps in selecting the right part to optimize designs. Furthermore, an integrated ESD protection of up to 2kV eliminates ESD related yield loss. At the same time, especially our industry-leading SMD package offering contributes to BOM and PCB space savings and simplifies manufacturing. This unique set of product features and their resulting benefits, position the CoolMOSTM PFD7 Superjunction MOSFET family exceptionally well for ultrahigh density applications like chargers and adapters, but also for low-power drives and specific lighting applications. 65 W delta efficiency @ 90 VAC input voltage with IPAN60R125PFD7S as reference Power ICs Low-side MOSFET temperature 100 W motor drive at high line 230 VAC 0,5 IPAN60R125PFD7S IPA60R120P7 P7 -1 - 1,5 0,5 1 1,5 2 Output current [A] 2,5 3 600 V CoolMOSTM PFD7 increases efficiency in lightand full-load conditions. This results in a power density increase of 1.8 W for ultrahigh power chargers and adapters. 3,5 70 = 18C 60 CE Intelligent switches and input ICs - 0,5 PFD7 "#$%! 50 IPD60R2K0PFD7S IPD50R2K0CE 600 V CoolMOSTM PFD7 provides up to 2% higher efficiency at 100 W, which results in an 18C thermal improvement. Considering its excellent commutation ruggedness as well as its low EMI, it is the perfect solution for low-power drives. Gate driver ICs = 0.35% = 1.17% Case temperature [C] Efficiency increase [%] 80 PFD7 0 Key features Key benefits Very low FOM RDS(on) x Eoss +1.8 W / inch3 power density improvement compared to latest CoolMOSTM technologies used in charger applications Integrated robust fast body diode Microcontrollers Features and benefits Extremely low switching losses Applications 600 V CoolMOSTM PFD7 Supports smaller form factors and thinner designs Up to 2% efficiency increase and 18C improved thermal behavior compared to CoolMOSTM CE for low-power drives applications Wide range of RDS(on) values and broad package portfolio BOM cost reduction and easy manufacturing Excellent communication ruggedness Robustness and reliability Low EMI Easy to select right parts for design fine-tuning XENSIVTM sensors Up to 2 kV ESD protection Charger Packages www.infineon.com/600V-PFD7 For more details on the product, click on the part number. 129 600/650 V CoolMOSTM C7/G7 SJ MOSFETs 600 V and 650 V CoolMOSTM C7 and C7 Gold (G7) SJ MOSFETs Infineon's Superjunction MOSFET series for highest efficiency Reduction of EOSS 7 Stored energy EOSS [J] The 600 V and 650 V CoolMOSTM C7 and C7 Gold (G7) Superjunction MOSFET series are designed to achieve record level efficiency performance - they offer substantial efficiency benefits over the whole load range in hard switching applications compared to previous series and competition. This is achieved by minimizing switching losses via ultralow levels of switching losses (EOSS) (approximately 50 percent reduction compared to the CoolMOSTM CP), reduced gate charge (QG) and a careful balance of other relevant product key parameters. The low Eoss and QG also enable operation at higher switching frequency and related size reduction of the circuit magnetics. 6 5 -50% 4 3 2 1 0 0 100 200 300 400 Drain source voltage VDS [V] IPP60R180C7 IPP60R199CP GaN HEMT The outstanding figures of merit (FOM) and the best-in-class on-state resistance (RDS(on)) offerings make the CoolMOSTM C7 and C7 Gold series key enablers for highest efficiency and power density. While the 650 V CoolMOSTM C7 and G7 (C7 Gold) superjunction MOSFETs are solely designed for hard switching applications such as PFC, the 600 V version is also well suited for high-end LLC stages due to its rugged body diode that withstands slew rates up to 20 V/ns. The product portfolio contains TO-247 4-pin, ThinPAK 8x8, TO-Leadless and top-side cooled Double DPAK (DDPAK) packages which come with additional Kelvin source contacts enabling further efficiency advantages over the classical 3-pin approach. Features and benefits Key features Key benefits Reduced switching loss parameters such as QG and Coss, enabling higher switching frequency Increased efficiency in hard switching topologies such as PFC and TTF 50 percent Eoss reduction compared to older CoolMOSTM CP Reduced size and cost of magnetic components by increased switching frequency (e.g. 65 -130 kHz) Suitable for hard switching topologies (650 V and 600 V) Increased power density by smaller packages for the same RDS(on) Suitable for high-end resonant (600 V only) topologies Efficiency [%] PFC CCM 1200 W efficiency difference for 90 VAC (PFC CCM, 1.150 W @ 65 kHz) 0.8 MOSFET losses [W] IPW60R045CP vs. IPZ60R060C7, highline 2.5 kW 0.7 12.4 0.6 0.2 0.5 7.1 0.4 Average 3.0 0.2 2.1 0.1 0.7% 0.4% 0.0 0 200 400 600 800 1.000 1.200 6.0 0.1 0.3 CoolMOSTM CP 6.6 0.1 1.5 4.7 0.1 0.8 1.0 CoolMOSTM C7 2.1 4.1 1.9 2.8 2.1 2.9 CoolMOSTM CP CoolMOSTM C7 CoolMOSTM CP CoolMOSTM C7 65 kHz 130 kHz Pout [W] IPZ60R040C7 IPW60R040C7 IPW60R045CP Gate charge Turn-off Turn-on Conduction www.infineon.com/c7 For more details on the product, click on the part number. 130 20-300 V MOSFETs 600 V CoolMOSTM S7 SJ MOSFETs The best price/performance SJ MOSFET for low frequency switching applications 500-950 V MOSFETs CoolMOSTM P7, C7, G7, CFD7 RDS(on) x price The 600 V CoolMOSTM S7 superjunction MOSFET is the perfect fit for applications where MOSFETs are switched at low frequency, such as active bridge rectification, inverter stages, in-rush relays, PLCs, power solid state relay and solid state circuit breakers. The new MOSFET design, not being focused on switching losses, allows the CoolMOSTM S7 to offer cost-optimized, distinctively low on-resistance (RDS(on)) values, ideally suited for applications looking to minimize conduction losses at the best price. CoolMOSTM S7 i.e. Brigde rectification in SMPS Low frequency PFC for white goods 0 i.e. Boost MOSFET in PFC 20 i.e. Higher density designs 100 250 WBG semiconductors Switching frequency [kHz] The CoolMOSTM S7 leads the way for power density, uniquely fitting a 22 m RDS(on) chip into an innovative small TO-Leadless (TOLL) SMD package. Power ICs Discrete IGBTs Use cases Typically, CoolMOSTM S7 is used in active rectification bridges, where diodes are replaced or paralleled with MOSFETs, obtaining an increase in efficiency without the need for extensive system redesign. In this application, the TO-leadless (TOLL) package in low RDS(on) allows the most efficient and compact modular design based on daughter cards. The CoolMOSTM S7 delivers also tremendous value to solid state relay (SSR) and solid state circuit breaker (SSCB) designs, by bringing the superjunction MOSFET advantages to a system level cost comparable to silicon alternatives. In addition, any socket or topology switching at low frequency can greatly benefits from the leading low RDS(on) x price. Key features Key benefits Best-in-class RDS(on) in SMD packages Minimizes conduction losses Optimized for conduction performance, reaching the lowest RDS(on) values An easy step into Titanium level SMPS Modular, more compact and easier designs High pulse current capability Eliminates or reduces heat sink in solid state relays and circuit breakers Improved thermal resistance Lower TCO cost or BOM cost 99.3 Microcontrollers Efficiency [%] no sync rect 98.5 10 20 30 40 22 m 50 60 Load [%] 40 m 70 80 90 100 No synchronous rectification CoolMOSTM S7 brings more efficiency to power supplies when used in an active rectification bridge. 98.0 10 20 30 40 50 60 Load [%] 70 80 90 100 35 m GaN based half-bridge totem pole PFC 35 m GaN based half-bridge totem pole PFC with 22 m CoolMOSTM S7 in synchronous rectification 35 m GaN based half-bridge totem pole PFC with 40 m CoolMOSTM S7 in synchronous rectification XENSIVTM sensors Efficiency [%] +0.5% 97.5 97.0 with sync rect +0.3% 99.0 98.5 Gate driver ICs 3 kW GaN based totem pole PFC efficiency calculation with and without synchronous rectification when Vin = 230 VAC, Vout = 400 V, fsw = 65 kHz 99.0 98.0 Intelligent switches and input ICs Features and benefits Efficiency in 2400 W PFC at Vin = 230 VAC Difference between using or not using the active bridge rectification Applications 600 V CoolMOSTM S7 CoolMOSTM S7 is the perfect complement for CoolSiCTM MOSFETs and CoolGaNTM e-mode HEMTs in totem pole PFC topologies. Packages www.infineon.com/s7 For more details on the product, click on the part number. 131 600 V CoolMOSTM CFD7 SJ MOSFETs 600 V CoolMOSTM CFD7 SJ MOSFETs Infineon's solution for resonant switching high power applications The 600 V CoolMOSTM CFD7 is one of Infineon's latest high voltage superjunction MOSFET series with an integrated fast body diode. It is the ideal choice for resonant topologies, such as LLC and ZVS PSFB, and targets the high SMPS market. As a result of significantly reduced gate charge (QG), improved turn-off behavior, a reverse recovery charge (Qrr) of up to 69 percent lower compared to the competition, as well as the lowest reverse recovery time (trr) in the market, it combines the highest efficiency and best-in-class reliability in soft switching applications, without sacrificing the easy implementation in the design-in process. In addition, the 600 V CoolMOSTM CFD7 enables higher power density solutions by offering the best-in-class on-state resistance (RDS(on)) package combinations in through-hole devices, as well as in surface mount devices. In ThinPAK 8x8 and TO-220 with CoolMOSTM CFD7, a RDS(on) of around 30 percent below the next best competitor offering can be achieved. All this together makes CoolMOSTM CFD7 the perfect fit for server and telecom applications, and it is also suitable for EV-charging stations. Efficiency comparison of CFD7 vs. CFD2 and competition in 2 kW ZVS Qrr comparison of 170 m CFD vs. 190 m range competition* 1 1200 0.8 1000 Qrr [nC] 800 World`s best Qrr got even better! 600 -32 % 400 Efficiency [%] 0.6 -69 % 0.4 0.2 0 1.45% 0.17% -0.2 -0.4 200 -0.6 -0.8 0 Comp. C Comp. A Comp. D Comp. B CFD2 CFD7 0 10 20 30 40 Load current [A] *Comparison based on datasheet values IPW60R070CFD7 IPW65R080CFD Competitor A Competitor B Competitor C Competitor D Features and benefits Key features Key benefits Ultrafast body diode Best-in-class hard commutation ruggedness Best-in-class reverse recovery charge (Qrr) Highest reliability for resonant topologies Improved reverse diode dv/dt and dif/dt ruggedness Highest efficiency with outstanding ease of use/performance trade-off Lowest figure of merit (RDS(on) x QG x Eoss) Enabling increased power density solutions Best-in-class RDS(on)/package combinations www.infineon.com/cfd7 For more details on the product, click on the part number. 132 20-300 V MOSFETs CoolMOSTM CE SJ MOSFETs High voltage superjunction MOSFETs for consumer applications 500-950 V MOSFETs Infineon`s CoolMOSTM CE is a product family that addresses consumer and lighting applications. It offers benefits in efficiency and thermal behavior versus standard MOSFETs and is optimized for ease of use and cost-competitiveness, while delivering the right fit performance and excellent Infineon quality. Application example: 10 W and 15 W smartphone charger High line Low line CoolMOSTM CE case temperature: The maximum MOSFET case temperature is required to be below 90C. CoolMOSTM CE meets this requirement and offers enough margin required for design-in flexibility. 10 W design: IPS65R1K5CE EN 55022 B radiated HF-field 30 MHz - 1 GHz position 15 W charger IPS65R1K0CE High line Low line CoolMOSTM CE efficiency performance: CoolMOSTM CE meets the 80 percent standard efficiency requirement and offers enough margin required for design-in flexibility. 20 10 0 EN 55022 B RE 10 m OP 40 Level [dBV/m] 30 20 10 The performance of CoolMOSTM CE in the 10 W and 15 W design demonstrates that the series meets common EMI requirements for charger applications and thus, is also offering design-in flexibility. 0 -10 50 60 80 100M 200 300 400 500 800 1G Frequency [Hz] Horizontal direction 30M 50 60 80 100M 200 300 400 500 800 1G Frequency [Hz] Vertical direction Horizontal direction Microcontrollers Level [dBV/m] 30 -10 30M 10 W charger IPS65R1K5CE 15 W design: IPS65R1K0CE EN 55022 B radiated HF-field 30 MHz - 1 GHz position EN 55022 B RE 10 m OP 40 7% Discrete IGBTs 15 W charger IPS65R1K0CE 14% Power ICs 10 W charger IPS65R1K5CE 4.5% 4.5% Intelligent switches and input ICs 14C 100 95 90 85 80 75 70 65 60 55 50 Gate driver ICs 13C 19C 7C Average efficiency [%] Temperature [C] 100 90 80 70 60 50 40 30 20 10 0 WBG semiconductors CoolMOSTM CE meets the standard efficiency requirements in charger application CoolMOSTM CE meets typical MOSFET case temperature requirements in charger applications Applications CoolMOSTM CE SJ MOSFETs Vertical direction Product portfolio We offer a broad portfolio covering five voltage classes in both through-hole and SMD packages Quality Our field failure rates are as low as 0.1 DPM Design-in support We have a large field application engineering team to provide professional and flexible support for your design XENSIVTM sensors CoolMOSTM CE customer benefits Charger Packages www.infineon.com/ce For more details on the product, click on the part number. 133 CoolMOSTM high power packages CoolMOSTM SJ MOSFET high power package innovations Space-saving and high performance packages TO-263-7 (D2PAK-7-pin) The TO-263-7-pin package is an SMD package addressing automotive-specific requirements including high efficiency and controllability. The Kelvin source pin leads to reduced An SMD package for high efficiency and controllability in automotive applications switching losses. Furthermore the new 7-pin design increases the creepage distance at the PCB and therefore helps to improve the manufacturability. Top-side cooled Double DPAK (DDPAK) This is the first top-side cooled surface mount device (SMD) package addressing high power SMPS applications such as PC power, solar, server and telecom. SMD-based SMPS designs support fast switching and help to reduce the parasitic inductance associated with long leaded packages such as the common TO-220 package. In today's SMD-based designs, the output power is restricted by the thermal limit of the PCB material because the heat must be dissipated through the board. Thanks to the top-side Innovative top-side cooled SMD solu- cooling concept of DDPAK, the thermal decoupling of board and semiconductor is postion for high power applications sible, enabling higher power density or improved system lifetime. TO-247 4-pin with asymmetric leads The TO-247 4-pin package with asymmetric leads is an optimized version of the standard TO-247 4-pin and enables highest efficiency and controllability in the high power SMPS market. The fourth pin acts as a Kelvin source. The main current of the switch is placed outside of the gate loop and the feedback is eliminated. This leads to less switching losses, especially at high currents. Secondly, the EMI will be reduced due to cleaner waveforms. In addition, the asymmetric leads further improve the ease of use in the design-in process. For highest efficiency and controllability Compared to the standard TO-247 4-pin the distance between the critical pins has been in high power SMPS markets increased to enable simplified wave soldering and reduced board yield loss. ThinPAK 8x8 With very small footprint of only 64 mm (vs. 150 mm for the DPAK) and a very low profile with only 1 mm height (vs. 4.4 mm for the DPAK) the ThinPAK 8x8 leadless SMD package for high voltage MOSFETs is a first choice to decrease system size in power-density driven designs. Low parasitic inductance and a separate 4-pin Kelvin source connection offer best efEnabling significant space savings ficiency and ease of use. The package is RoHS compliant with halogen-free mold compound. TO-Leadless Combined with the latest CoolMOSTM C7 Gold (G7) technology, the TO-Leadless (TOLL) package is Infineon's flagship SMD package for high power/high current SMD solutions. Compared to D2PAK 7-pin, TO-Leadless shows a 30 percent reduction in footprint, yet offers improved thermal performance. This and the 50 percent height reduction result in a significant advantage whenever highest power density is demanded. Equipped with 4-pin Optimized for high power Kelvin source connection and low parasitic inductances the package offers best efficiency applications and ease of use. The package is MSL1 compliant and reflow solderable. www.infineon.com/coolmos-latest-packages For more details on the product, click on the part number. 134 20-300 V MOSFETs CoolMOSTM SJ MOSFET low power package innovations 500-950 V MOSFETs Addressing today's consumer needs SOT-223 The SOT-223 package without middle pin is a cost-effective alternative to DPAK, addressing the need for cost reductions in price sensitive applications. It offers a smaller footprint, while still being pin-to-pin compatible with DPAK, thus, allowing a drop-in thermal performance to DPAK and enables customers to achieve improved form fac- replacement for DPAK tors or space savings in designs with low power dissipation. WBG semiconductors replacement for DPAK and second sourcing. Moreover, SOT-223 achieves comparable Cost-effective drop-in Applications CoolMOSTM low power packages Discrete IGBTs ThinPAK 5x6 ThinPAK 5x6 reduces the PCB area by 52 percent and height by 54 percent when compared to the DPAK package which is widely used in chargers and adapters. ThinPAK 5x6 is the right device to replace DPAK and meet the market demands of slimmer and smaller designs. Also ThinPAK 5x6 enables a reduced charger and adapter case hot spot temperature by increasing the space between the MOSFET and the charger and adapters and chargers adapter case. Power ICs Solution for slim and small Intelligent switches and input ICs TO-220 FullPAK Narrow Lead Infineon's TO-220 FullPAK Narrow Lead addresses customer needs with regards to height reduction requirements in adapter and charger applications. By offering an optimized standoff width and height and improved creepage distance, the package Solution for height reduction especially suitable for slim and in adapters and chargers semi-slim adapter solutions. Gate driver ICs can be fully inserted into the PCB without any production concerns and, therefore, is Microcontrollers TO-220 FullPAK Wide Creepage This package solution has an increased creepage distance between the pins to 4.25 mm compared to 2.54 mm of a TO-220 FullPAK package. It targets open frame power supplies such asTV setsandPC power,where dust can enter the case through air vents. Dust particles can reduce the effective creepage between pins over time, which may supplies without any additional measures. Thus, it reduces system cost by offering an open frame power supplies alternative to frequently used approaches to increase creepage distance. XENSIVTM sensors lead to high voltage arcing. The package meets the requirements of open frame power Improved creepage distance for Packages www.infineon.com/coolmos-latest-packages For more details on the product, click on the part number. 135 CoolMOSTM automotive CoolMOSTM SJ MOSFETs for automotive 600 V CoolMOSTM CPA, 650 V CoolMOSTM CFDA, 800 V CoolMOSTM C3A and new 650 V CoolMOSTM CFD7A - on the fast lane in automotive applications Highest system performance in a size and weight constrained environment, outstanding and proven product quality and reliability, as well as 100 percent reliable delivery are the needs of our automotive customers. With the high voltage automotive MOSFET series 600 V CoolMOSTM CPA and 650 V CoolMOSTM CFDA, 800 V CoolMOSTM C3A and the new 650 V CoolMOSTM CFD7A, Infineon is perfectly prepared to take the challenges in the strongly growing automotive market. Product series Key features 600 V CoolMOSTM CPA Best choice for demanding hard switching applications Lowest RDS(on) per package Lowest gate charge value QG Applications 650 V CoolMOSTM CFDA Easy implementation of layout and design Integrated fast body diode Limited voltage overshoot during hard commutation - self-limiting dI/dt and dV/dt Low Q at repetitive commutation on body diode and rr low Qoss 800 V CoolMOSTM C3A NEW 650 V CoolMOSTM CFD7A Outstanding performance in terms of efficiency, thermal behavior and ease-of-use High blocking voltage Improved 650 V CoolMOSTM CFDA Higher application voltage possible (at the same proven reliability level) New D2PAK 7-pin with increased creepage distance and Kelvin source Considerable improvement in key parameters (higher efficiency) Hard switching topologies (with SiC diode) PFC boost stages in on-board charger Quality Resonant switching topologies DC-DC stage of OBC LLC or full-bridge phase shift (ZVS) in DC-DC converter HID lamp Active DC link dis-charche Quality level well beyond the formal Pre-charge requirements of the AEC Q101 standard Auxiliary Supplies for low-power applications in Traction Inverters through On-Board Charger Special screening measures in front HV-LV DC-DC converters end, back end DC-link pre-charge Mission-profile based qualification DC-Link active discharge procedures Isolation Supervision Hard switching topologies (with SiC diode) PFC boost stages in on-board charger Resonant switching topologies DC-DC stage of OBC LLC or full-bridge phase shift (ZVS) in DC-DC converter HID lamp Active DC link discharge Pre-charge CoolMOSTM SJ MOSFET automotive - benchmark in quality and reliability Focus on top-notch quality and reliability without any compromise - that is the principle Infineon applies during development and qualification of all CoolMOSTM superjunction technologies. For our automotive grade derivatives, the great quality levels of the industrial base technologies are further boosted by special screening measures in front- and back-end, as well as by extended qualification procedures. The Infineon robustness validation approach with extended stress-test procedures, doubling the real application requirements, is one of our key measures to ensure a quality level well beyond the formal requirements of the AEC Q101 standard. Aside from extended stress times on standard qualification tests, it comprises test procedures, specially developed by Infineon to ensure highest quality of e.g., the power metallization of our devices. Usage of robust package technologies, 100 percent gate oxide screening, and top-notch production monitoring, including yield screening measures, part average testing (PAT), statistical bin alarm (SBA), and pattern recognition procedures, complete our package to guarantee highest automotive quality. This holistic approach results in an unrivalled quality position of our 600 V CoolMOSTM CPA and 650 V CoolMOSTM CFDA, 800 V CoolMOSTM C3A and the new 650 V CoolMOSTM CFD7A. Robustness validation - example for thermal cycling test +254% 2.540 cycles 1.270 cycles 1.000 cycles AEC Q101 Customer mission profile Infineon automotive robustness validation www.infineon.com/cfda www.infineon.com/coolmos-automotive For more details on the product, click on the part number. 136 Applications 20-300 V MOSFETs 500-950 V MOSFETs WBG semiconductors CoolMOSTM SJ MOSFET automotive - ready to support future application trends Power ICs OBC Vienna rectifier for three-phase PFC in OBC Gate driver ICs Intelligent switches and input ICs Classic PFC stage for OBC Discrete IGBTs Driven by the carbon dioxide (CO2) reduction initiatives, the market of plug-in hybrid PHEV and pure EV is strongly growing. Higher ranges of the electric vehicles are realized by increasing the battery capacity and the energy efficiency of the used electric components. The used battery voltage classes tend to become standardized at approximately 450 V with a trend towards the higher voltages, as this supports faster charging times and enables lighter cabling within the vehicle. Discrete high voltage components are widely used for on board charger (OBC) and DC-DC converter (LDC) applications, as price pressure increasingly displaces module-based solutions. The trend towards fast charging impacts on the power range demanded from OBC topologies. Presently, as well as in the past, a vast majority of OBC topologies have been found in the range up to 7.2 kW, whereas the future tends to stir the trend towards 11 kW or even up to 22 kW. This development, paired with a demand for high efficiency and power density at low system cost, is a strong driver for the usage of three-phase solutions. XENSIVTM sensors Microcontrollers While for the lower power OBC solutions classic PFC approaches are the well-established approaches in the market, the Vienna rectifier is the optimal solution for the higher power levels. As a true three-phase topology, it delivers full power if attached to a three-phase input but is flexible enough to run on a single-phase if required. The three-level topology minimizes the filter effort compared to other solutions. By using the doubled frequency on the magnetic components, it also helps to significantly reduce the size of the passives. As a three-level topology, the Vienna rectifier, followed by two paralleled DC-DC stages, furthermore leads to a relaxed voltage stress level on the power MOSFETs. This way, it enables to handle upcoming higher battery voltage levels. The RDS(on), required to yield a desired efficiency level in a Vienna Rectifier, is a function of applied switching frequency and demanded power level. With our 600 V CoolMOSTM CPA and 650 V CoolMOSTM CFDA portfolio, covering an RDS(on) range from 45 to 660 m, we are well prepared to support your next generation three-phase Vienna rectifier design. With CoolMOSTM you are ready to seize your share in the emerging high-power onboard-charger markets. Packages www.infineon.com/coolmos-automotive For more details on the product, click on the part number. 137 CoolMOSTM product portfolio 950V CoolMOSTM P7 RDS(on) [m] TO-220 Charger ACTIVE & PREFERRED TO-220 FullPAK SOT-223 TO-251 Long lead TO-252 (DPAK) 450 IPA95R450P7 IPU95R450P7 IPD95R450P7 750 IPA95R750P7 IPU95R750P7 IPD95R750P7 1200 IPA95R1K2P7 IPN95R1K2P7 IPU95R1K2P7 IPD95R1K2P7 2000 IPN95R2K0P7 IPU95R2K0P7 IPD95R2K0P7 3700 IPN95R3K7P7 IPU95R3K7P7 900V CoolMOSTM C3 RDS(on) [m] TO-220 TO-262 (I2PAK) TO-263 (D2PAK) IPI90R340C3 IPB90R340C3 IPI90R500C3 IPP90R800C3 1000 IPP90R1K0C3 1200 IPP90R1K2C3 TO-220 FullPAK TO-247 TO-252 (DPAK) TO -220 IPA90R340C3 IPW90R340C3 IPA90R500C3 IPW90R500C3 IPA90R800C3 IPA90R1K0C3 IPI90R1K2C3 800 V CoolMOSTM P7 RDS(on) [m] D2PAK IPW90R120C3 IPP90R340C3 500 800 ThinPAK 8x8 ACTIVE 120 340 TO-220 Wide creepage IPA90R1K2C3 IPD90R1K2C3 ACTIVE & PREFERRED TO-220 FullPAK TO-247 TO-252 (DPAK) TO-251 (IPAK) TO-251 (IPAK Short Lead) SOT-223 TO-220 FullPAK narrow lead 280 IPP80R280P7 IPA80R280P7 IPW80R280P7 IPD80R280P7 IPAN80R280P7 360 IPP80R360P7 IPA80R360P7 IPW80R360P7 IPD80R360P7 IPAN80R360P7 450 IPP80R450P7 IPA80R450P7 IPD80R450P7 600 IPP80R600P7 IPA80R600P7 IPD80R600P7 IPAN80R450P7 IPU80R600P7 IPS80R600P7 IPN80R600P7 750 IPP80R750P7 IPA80R750P7 IPD80R750P7 IPU80R750P7 IPS80R750P7 IPN80R750P7 900 IPP80R900P7 IPA80R900P7 IPD80R900P7 IPU80R900P7 IPS80R900P7 IPN80R900P7 1200 IPP80R1K2P7 IPA80R1K2P7 IPD80R1K2P7 IPU80R1K2P7 IPS80R1K2P7 IPN80R1K2P7 1400 IPP80R1K4P7 IPA80R1K4P7 2000 IPD80R1K4P7 IPU80R1K4P7 IPS80R1K4P7 IPN80R1K4P7 IPD80R2K0P7 IPU80R2K0P7 IPS80R2K0P7 IPN80R2K0P7 IPS80R2K4P7 2400 IPD80R2K4P7 IPU80R2K4P7 3300 IPD80R3K3P7 IPU80R3K3P7 IPN80R3K3P7 4500 IPD80R4K5P7 IPU80R4K5P7 IPN80R4K5P7 www.infineon.com/coolmos www.infineon.com/c3 IPN80R2K4P7 www.infineon.com/800v-p7 www.infineon.com/950v-p7 For more details on the product, click on the part number. 138 TO-220 FullPAK TO-247 TO-252 (DPAK) 310 IPA80R310CE 460 IPA80R460CE 650 IPA80R650CE 1000 IPA80R1K0CE IPD80R1K0CE 1400 IPA80R1K4CE IPD80R1K4CE 2800 IPU80R1K0CE TO-220 TO-263 (D2PAK) TO-220 FullPAK TO-247 WBG semiconductors ACTIVE 85 290 TO-251 (IPAK) IPD80R2K8CE 800V CoolMOSTM C3 RDS(on) [m] 20-300 V MOSFETs TO-220 TO-252 (DPAK) SPW55N80C3 SPP17N80C3 SPB17N80C3 SPA17N80C3 SPW17N80C3 SPW11N80C3 450 SPP11N80C3 SPA11N80C3 650 SPP08N80C3 SPA08N80C3 900 SPP06N80C3 SPA06N80C3 SPD06N80C3 1300 SPP04N80C3 SPA04N80C3 SPD04N80C3 SPA02N80C3 SPD02N80C3 2700 Discrete IGBTs RDS(on) [m] ACTIVE 500-950 V MOSFETs 800V CoolMOSTM CE Applications CoolMOSTM product portfolio Charger 360 IPS70R360P7S 450 600 IPA70R360P7S TO-252 (DPAK) IPD70R360P7S IPA70R450P7S IPS70R600P7S 750 900 TO-220 FullPAK IPA70R600P7S IPD70R600P7S IPA70R750P7S IPS70R900P7S IPA70R900P7S IPD70R900P7S TO-220 FullPAK narrow lead IPS70R1K4P7S SOT-223 IPAN70R360P7S IPSA70R360P7S IPN70R360P7S IPAN70R450P7S IPSA70R450P7S IPN70R450P7S IPAN70R600P7S IPSA70R600P7S IPN70R600P7S IPAN70R750P7S IPSA70R750P7S IPN70R750P7S IPAN70R900P7S IPSA70R900P7S IPN70R900P7S IPSA70R1K2P7S IPN70R1K2P7S 1200 1400 TO-251 (IPAK Short Lead w/ ISO Standoff) IPD70R1K4P7S 2000 Power ICs TO-251 (IPAK Short Lead) IPSA70R1K4P7S IPN70R1K4P7S IPSA70R2K0P7S IPN70R2K0P7S Intelligent switches and input ICs RDS(on) [m] ACTIVE & PREFERRED Gate driver ICs 700 V CoolMOSTM P7 Charger 600 IPAW70R600CE 950 IPAW70R950CE TO-262 (I2PAK) IPI70R950CE TO-251 (IPAK Short Lead with ISO Standoff) TO-252 (DPAK) TO-251 (IPAK Short Lead) IPSA70R600CE IPD70R600CE IPSA70R950CE IPD70R950CE IPS70R950CE IPSA70R1K4CE IPD70R1K4CE IPS70R1K4CE IPSA70R2K0CE IPD70R2K0CE IPS70R2K0CE 1000 1400 IPN70R1K0CE 1500 2000 IPN70R1K5CE 2100 www.infineon.com/coolmos www.infineon.com/c3 SOT-223 Microcontrollers TO-220 FullPAK Wide Creepage XENSIVTM sensors RDS(on) [m] IPN70R2K1CE www.infineon.com/ce www.infineon.com/700v-p7 Packages 700V CoolMOSTM CE ACTIVE For more details on the product, click on the part number. 139 CoolMOSTM product portfolio 650 V CoolMOSTM C7 Gold (G-series) RDS(on) [m] TO -220 TO-Leadless (TOLL) 33 105 195 19 45 65 70 95 99 125 130 190 195 225 230 TO-263 (D2PAK) TO-220 FullPAK TO-247 TO -252 (DPAK) IPT65R033G7 IPT65R105G7 IPT65R195G7 650V CoolMOSTM C7 RDS(on) [m] ACTIVE & PREFERRED ACTIVE & PREFERRED TO-220 TO-263 (D2PAK) TO-220 FullPAK TO-247 TO-247 4-pin IPP65R045C7 IPP65R065C7 IPB65R045C7 IPB65R065C7 IPA65R045C7 IPA65R065C7 IPW65R019C7 IPW65R045C7 IPW65R065C7 IPZ65R019C7 IPZ65R045C7 IPZ65R065C7 IPP65R095C7 IPB65R095C7 IPA65R095C7 IPW65R095C7 IPZ65R095C7 IPP65R125C7 IPB65R125C7 IPA65R125C7 IPW65R125C7 IPP65R190C7 IPB65R190C7 IPA65R190C7 IPW65R190C7 IPP65R225C7 IPB65R225C7 IPA65R225C7 TO-252 (DPAK) ThinPAK 8x8 IPL65R070C7 IPL65R099C7 IPL65R130C7 IPD65R190C7 IPL65R195C7 IPD65R225C7 IPL65R230C7 Charger 650V CoolMOSTM CE RDS(on) [m] TO-220 400 650 1000 1500 ACTIVE TO-220 FullPAK 41 80 110 150 165 190 210 310 340 420 660 950 1400 TO-252 (DPAK) IPA65R400CE IPA65R650CE IPA65R1K0CE IPA65R1K5CE 650V CoolMOSTM CFD2 RDS(on) [m] TO-247 TO-220 TO-251 (IPAK) IPD65R400CE IPD65R650CE IPD65R1K0CE IPD65R1K5CE TO-251 (IPAK Short Lead) SOT-223 IPS65R400CE IPS65R650CE IPS65R1K0CE TO-220 FullPAK Narrow Lead IPAN65R650CE IPN65R1K5CE ACTIVE TO-262 (I2PAK) IPP65R110CFD IPP65R150CFD TO-263 (D2PAK) TO-220 FullPAK TO-247 IPB65R110CFD IPB65R150CFD IPA65R110CFD IPA65R150CFD IPW65R041CFD IPW65R080CFD IPW65R110CFD IPW65R150CFD IPB65R190CFD IPA65R190CFD IPW65R190CFD IPB65R310CFD IPA65R310CFD TO-252 (DPAK) ThinPAK 8x8 IPL65R165CFD IPP65R190CFD IPI65R190CFD IPL65R210CFD IPP65R310CFD IPL65R340CFD IPP65R420CFD www.infineon.com/coolmos www.infineon.com/g7 www.infineon.com/c7 IPA65R420CFD IPA65R660CFD IPW65R420CFD IPD65R420CFD IPD65R660CFD IPD65R950CFD IPD65R1K4CFD www.infineon.com/cfd2 www.infineon.com/ce For more details on the product, click on the part number. 140 Applications CoolMOSTM product portfolio Charger 125 210 280 360 600 1000 1500 2000 TO-220 FullPAK Narrow Leads TO-251 (IPAK Short Lead) IPAN60R125PFD7S IPAN60R210PFD7S IPAN60R280PFD7S IPAN60R360PFD7S IPS60R210PFD7S IPS60R280PFD7S IPS60R360PFD7S IPS60R600PFD7S IPS60R1K0PFD7S 600 V CoolMOSTM P7 TO-252 (DPAK) SOT-223 IPD60R210PFD7S IPD60R280PFD7S IPD60R360PFD7S IPD60R600PFD7S IPD60R1K0PFD7S IPD60R1K5PFD7S IPD60R2K0PFD7S IPN60R360PFD7S IPN60R600PFD7S IPN60R1K0PFD7S IPN60R1K5PFD7S IPN60R2K0PFD7S 20-300 V MOSFETs RDS(on) [m] ThinPAK 5x6 IPLK60R360PFD7 * IPLK60R600PFD7 * IPLK60R1K0PFD7 * IPLK60R1K5PFD7 * 500-950 V MOSFETs 600 V CoolMOSTM PFD7 ACTIVE & PREFERRED Charger ACTIVE & PREFERRED RDS(on) [m] TO-220 FullPAK TO-247 TO-247 4-pin asymmetric leads IPP60R060P7 IPA60R060P7 IPW60R024P7 IPW60R037P7 IPW60R045P7 IPW60R060P7 IPZA60R024P7 IPZA60R037P7 IPZA60R045P7 IPZA60R060P7 IPP60R080P7 IPP60R099P7 IPA60R080P7 IPA60R099P7 IPW60R080P7 IPW60R099P7 IPZA60R080P7 IPZA60R099P7 IPP60R120P7 IPA60R120P7 IPW60R120P7 IPZA60R120P7 TO-252 (DPAK) TO-220 FullPAK Wide Creepage ThinPAK 8x8 D2PAK IPB60R045P7 IPB60R060P7 IPL60R065P7 IPL60R085P7 IPB60R080P7 IPB60R099P7 Discrete IGBTs IPL60R105P7 IPB60R120P7 IPL60R125P7 IPP60R160P7 IPP60R180P7 IPA60R160P7 IPA60R180P7 IPW60R180P7 IPZA60R180P7 IPD60R180P7 IPB60R180P7 IPL60R185P7 IPP60R280P7 IPA60R280P7 IPD60R280P7 IPB60R280P7 IPL60R285P7 IPP60R360P7 IPA60R360P7 IPD60R360P7 IPB60R360P7 IPL60R365P7 IPP60R600P7 IPA60R600P7 600 V CoolMOSTM P7 Power ICs 24 37 45 60 65 80 99 105 120 125 160 180 185 280 285 360 365 600 TO -220 WBG semiconductors Industrial grade IPD60R600P7 Charger ACTIVE & PREFERRED Standard grade IPA60R180P7S IPA60R280P7S IPA60R360P7S IPA60R600P7S 600 V CoolMOSTM CFD7 RDS(on) [m] TO-220 TO-220 FullPAK Narrow lead TO-247 4-pin TO-252 (DPAK) IPAN60R180P7S IPAN60R280P7S IPAN60R360P7S IPAN60R600P7S IPD60R180P7S IPD60R280P7S IPD60R360P7S IPD60R600P7S ThinPAK 8x8 IPAW60R180P7S IPAW60R280P7S IPAW60R360P7S IPAW60R600P7S SOT-223 IPN60R360P7S IPN60R600P7S ACTIVE & PREFERRED TO-263 (D2PAK) TO-220 FullPAK TO-247 TO-252 (DPAK) 18 IPW60R018CFD7 24 IPW60R024CFD7 31/35 ThinPAK 8x8 DDPAK TO-Leadless (TOLL) IPDD60R045CFD7 * IPT60R045CFD7 * IPDD60R055CFD7 * IPT60R055CFD7 * IPW60R031CFD7 40/45 IPB60R040CFD7 IPW60R040CFD7 55 IPB60R055CFD7 IPW60R055CFD7 IPT60R035CFD7 * IPL60R060CFD7 IPP60R070CFD7 IPB60R070CFD7 IPW60R070CFD7 IPL60R075CFD7 IPDD60R075CFD7 * IPT60R075CFD7 * 90/95 IPP60R090CFD7 IPB60R090CFD7 IPW60R090CFD7 IPL60R095CFD7 IPDD60R090CFD7 * IPT60R090CFD7 * 105/115 IPP60R105CFD7 IPB60R105CFD7 IPW60R105CFD7 IPL60R115CFD7 IPDD60R105CFD7 * IPT60R105CFD7 * 125/140 IPP60R125CFD7 IPB60R125CFD7 IPA60R125CFD7 IPW60R125CFD7 IPL60R140CFD7 IPDD60R125CFD7 * IPT60R125CFD7 * 145/160 IPP60R145CFD7 IPB60R145CFD7 IPA60R145CFD7 IPW60R145CFD7 IPD60R145CFD7 IPL60R160CFD7 IPDD60R145CFD7 * IPT60R145CFD7 * 170 IPP60R170CFD7 IPB60R170CFD7 IPA60R170CFD7 IPW60R170CFD7 IPD60R170CFD7 210/225 IPP60R210CFD7 IPB60R210CFD7 IPA60R210CFD7 IPD60R210CFD7 280 IPP60R280CFD7 IPB60R280CFD7 IPA60R280CFD7 IPD60R280CFD7 360 IPP60R360CFD7 * IPB60R360CFD7 IPA60R360CFD7 IPD60R360CFD7 75 IPDD60R170CFD7 * IPL60R185CFD7 www.infineon.com/coolmos www.infineon.com/600v-p7 *Coming soon IPL60R225CFD7 www.infineon.com/600v-PFD7 www.infineon.com/CFD7 Packages 185 XENSIVTM sensors 60 70 TO-220 FullPAK Wide Creepage Intelligent switches and input ICs 180 280 360 600 TO-220 FullPAK Gate driver ICs TO -220 Microcontrollers RDS(on) [m] For more details on the product, click on the part number. 141 CoolMOSTM product portfolio 600 V CoolMOSTM S7 RDS(on) [m] ACTIVE & PREFERRED TO -220 QDPAK 10 22 TO-Leadless (TOLL) IPDQ60R010S7 * IPP60R022S7 IPT60R022S7 40 IPT60R040S7 65 IPT60R065S7 600 V CoolMOSTM C7 Gold (G-series) RDS(on) [m] TO -220 28 50 80 102 125 150 190 TO-Leadless (TOLL) ACTIVE & PREFERRED TO-220 FullPAK TO-247 TO-247 4-pin IPT60R028G7 IPT60R050G7 IPT60R080G7 IPT60R102G7 IPT60R125G7 IPT60R150G7 600V CoolMOSTM C7 RDS(on) [m] TO-252 (Double DPAK) IPDD60R050G7 IPDD60R080G7 IPDD60R102G7 IPDD60R125G7 IPDD60R150G7 IPDD60R190G7 ACTIVE & PREFERRED TO-220 TO-263 (D2PAK) TO-220 FullPAK 17 TO-247 IPW60R017C7 40 IPP60R040C7 IPB60R040C7 60 IPP60R060C7 IPB60R060C7 IPP60R099C7 TO-247 4-pin TO-252 (DPAK) IPZ60R040C7 IPA60R060C7 IPW60R060C7 IPZ60R060C7 IPB60R099C7 IPA60R099C7 IPW60R099C7 IPZ60R099C7 IPP60R120C7 IPB60R120C7 IPA60R120C7 IPW60R120C7 IPP60R180C7 IPB60R180C7 IPA60R180C7 IPW60R180C7 IPL60R065C7 104 120 IPL60R104C7 125 180 IPL60R125C7 IPD60R180C7 185 IPL60R185C7 600V CoolMOSTM P6 RDS(on) [m] TO-220 ACTIVE TO-220 FullPAK 41 TO-247 TO-247 4-pin TO-252 (DPAK) ThinPAK 5x6 ThinPAK 8x8 IPW60R041P6 70 IPW60R070P6 IPZ60R070P6 99 IPP60R099P6 IPA60R099P6 IPW60R099P6 IPZ60R099P6 125 IPP60R125P6 IPA60R125P6 IPW60R125P6 160 IPP60R160P6 IPA60R160P6 IPW60R160P6 IPP60R190P6 IPA60R190P6 IPW60R190P6 180 190 ThinPAK 8x8 IPZ60R017C7 IPW60R040C7 65 99 ThinPAK 8x8 IPL60R180P6 210 IPL60R210P6 230 IPA60R230P6 255 280 IPP60R280P6 IPA60R280P6 IPW60R280P6 330/360 IPL60R360P6S 380 IPA60R380P6 IPD60R380P6 600 IPA60R600P6 IPD60R600P6 650 www.infineon.com/coolmos www.infineon.com/c7 * Coming soon 142 IPL60R650P6S www.infineon.com/p6 www.infineon.com/g7 www.infineon.com/s7 For more details on the product, click on the part number. Applications CoolMOSTM product portfolio Charger TO-220 FullPAK TO-220 FullPAK Wide Creepage 190 IPAW60R190CE 280 IPAW60R280CE TO-252 (DPAK) TO-251 (IPAK) TO-251 (IPAK Short Lead) SOT-223 460 IPA60R460CE IPD60R400CE IPS60R400CE IPD60R460CE IPS60R460CE IPAW60R600CE IPD60R650CE IPS60R650CE IPD60R800CE IPS60R800CE IPAN60R650CE IPAN60R800CE 1000 IPA60R1K0CE IPD60R1K0CE IPU60R1K0CE IPS60R1K0CE IPN60R1K0CE 1500 IPA60R1K5CE IPD60R1K5CE IPU60R1K5CE IPS60R1K5CE IPN60R1K5CE 2100 IPD60R2K1CE IPU60R2K1CE 3400 IPD60R3K4CE 500V CoolMOSTM CE TO-220 IPP50R190CE IPN60R2K1CE IPN60R3K4CE ACTIVE & PREFERRED TO-220 FullPAK TO-247 TO-252 (DPAK) TO-251 (IPAK) TO-251 (IPAK Short Lead) SOT-223 TO-220 FullPAK Narrow Lead IPA50R190CE 280 IPP50R280CE IPA50R280CE IPD50R280CE 380 IPP50R380CE IPA50R380CE IPD50R380CE IPA50R500CE IPD50R500CE 500 IPS60R2K1CE IPS60R3K4CE WBG semiconductors IPA60R650CE 800 Discrete IGBTs 600 190 500-950 V MOSFETs 400 IPA60R400CE RDS(on) [m] TO-220 FullPAK Narrow Lead IPAW60R380CE 380 650 TO-247 IPD50R650CE 650 IPAN50R500CE IPN50R650CE IPA50R800CE IPD50R800CE IPN50R800CE 950 IPA50R950CE IPD50R950CE IPN50R950CE 1400 IPD50R1K4CE IPN50R1K4CE 2000 IPD50R2K0CE IPN50R2K0CE 3000 IPD50R3K0CE IPN50R3K0CE XENSIVTM sensors Microcontrollers Gate driver ICs Intelligent switches and input ICs 800 Power ICs RDS(on) [m] 20-300 V MOSFETs 600V CoolMOSTM CE ACTIVE www.infineon.com/500v-ce Packages www.infineon.com/coolmos www.infineon.com/ce For more details on the product, click on the part number. 143 CoolMOSTM product portfolio CoolMOSTM SJ MOSFET automotive 650V CoolMOSTM CFDA Product type ACTIVE & PREFERRED RDS(on) @ TJ = 25C VGS = 10V [m] ID,max. @ TJ = 25C [A] ID_puls,max. [A] VGS(th),min.-max. [V] QG,typ. [nC] RthJC,max. [K/W] Package IPD65R420CFDA 420 8.7 27 3.5...4.5 32 1.5 TO-252 IPD65R660CFDA 660 6 17 3.5...4.5 20 2 TO-252 IPB65R110CFDA 110 31.2 99.6 3.5...4.5 11 0.45 TO-263 IPB65R150CFDA 150 22.4 72 3.5...4.5 86 0.64 TO-263 IPB65R190CFDA 190 17.5 57.2 3.5...4.5 68 0.83 TO-263 IPB65R310CFDA 310 11.4 34.4 3.5...4.5 41 1.2 TO-263 IPB65R660CFDA 660 6 17 3.5...4.5 20 2 TO-263 110 31.2 99.6 3.5...4.5 11 0.45 TO-220 IPP65R150CFDA 150 22.4 72 3.5...4.5 86 0.64 TO-220 IPP65R190CFDA 190 17.5 57.2 3.5...4.5 68 0.83 TO-220 IPP65R310CFDA 310 11.4 34.4 3.5...4.5 41 1.2 TO-220 IPW65R048CFDA 48 63.3 228 3.5...4.5 27 0.25 TO-247 IPW65R080CFDA 80 43.3 127 3.5...4.5 16 0.32 TO-247 IPW65R110CFDA 110 31.2 99.6 3.5...4.5 11 0.45 TO-247 IPW65R150CFDA 150 22.4 72 3.5...4.5 86 0.64 TO-247 IPW65R190CFDA 190 17.5 57.2 3.5...4.5 68 0.83 TO-247 IPP65R110CFDA 600V CoolMOSTM CPA Product type ACTIVE & PREFERRED RDS(on) @ TJ = 25C VGS = 10V [m] ID,max. @ TJ = 25C [A] ID_puls,max. [A] QG,typ. [nC] VGS(th),min.-max. [V] RthJC,max. [K/W] Package IPB60R099CPA 99 31 93 2.5 ... 3.5 60 0.5 TO-263 IPB60R199CPA 199 16 51 2.5 ... 3.5 32 0.9 TO-263 IPB60R299CPA 299 11 34 2.5 ... 3.5 22 1.3 TO-263 IPP60R099CPA 99 31 93 2.5 ... 3.5 60 0.5 TO-220 IPW60R045CPA 45 60 230 2.5 ... 3.5 150 0.29 TO-247 IPW60R075CPA 75 39 130 2.5 ... 3.5 87 0.4 TO-247 IPW60R099CPA 99 31 93 2.5 ... 3.5 60 0.5 TO-247 IPI60R099CPA 99 31 93 2.5 ... 3.5 60 0.5 TO-262 800V CoolMOSTM C3A Product type ACTIVE & PREFERRED RDS(on) @ TJ = 25C VGS = 10V [m] ID,max. @ TJ = 25C [A] ID_puls,max. [A] VGS(th),min.-max. [V] QG,typ. [nC] RthJC,max. [K/W] Package IPD80R2K7C3A 2700 2 6 2.1 ... 3.9 12 3 TO-252 IPB80R290C3A 290 17 51 2.1 ... 3.9 91 0.55 TO-263 IPW80R290C3A 290 17 51 2.1 ... 3.9 91 0.55 TO-247 www.infineon.com/coolmos www.infineon.com/coolmos-automotive For more details on the product, click on the part number. 144 Applications 20-300 V MOSFETs CoolMOSTM product portfolio TO-263 DPAK TO-263-7 DPAK 7 pin TO-220 TO-247 230 IPB65R230CFD7A * 115 IPB65R115CFD7A * * IPBE65R115CFD7A * * IPP65R0115CFD7A * IPW65R115CFD7A * 99 IPB65R099CFD7A * IPBE65R099CFD7A * IPP65R099CFD7A * IPW65R099CFD7A * 50 IPBE65R230CFD7A * IPBE65R075CFD7A * 75 IPB65R050CFD7A * 500-950 V MOSFETs RDS(on) [m] ACTIVE & PREFERRED IPBE65R050CFD7A * IPW65R075CFD7A * IPP65R050CFD7A * WBG semiconductors 650V CoolMOSTM CFD7A IPW65R050CFD7A * IPW65R035CFD7A * 22 IPW65R022CFD7A * * ES available, SOP second half 2020 * * Coming soon Packages XENSIVTM sensors Microcontrollers Gate driver ICs Intelligent switches and input ICs Power ICs Discrete IGBTs 35 For more details on the product, click on the part number. 145 CoolMOSTM product portfolio CoolMOSTM SJ MOSFETs - packages SOT-223 RDS(on) [m] Voltage [V] Series 500 CE P7 CE PFD7 CE P7 CE 600 650 700 800 P7 950 P7 0-59 60-89 90-149 150-199 200-299 300-400 401-600 360 600 360 600 360 450/600 601-899 900-1500 >1500 650/800 950/1400 2000/3000 700 650/750 1000/1500 2100/3400 1000/1500 2000 2000 900/1200/1400 2000 1000/1500/2100 900/1200/1400 2000/2400/ 3300/4500 1200 2000/3700 TO-247 RDS(on) [m] Voltage [V] 600 650 800 900 Series 0-59 60-89 90-149 150-199 P7 C7 P6 CFD7 CPA C7 CFD2 CFDA CFD7A P7 C3 C3 24/37/45 17/40 41 18/24/31/40/55 45 19/45 41 48 22 */35 */50 * 60/80 60 70 70 75 65 80 80 75 * 99/120 99/120 99/125 90/125/145 99 95/125 110 110 99 */115 * 180 180 160/190 170 200-299 300-400 601-899 900-1500 >1500 280 190 150/190 150/190 420 280 290 85 401-600 360 340 450 500 300-400 401-600 601-899 900-1500 >1500 401-600 601-899 900-1500 >1500 401-600 601-899 900-1500 >1500 120 TO-247 4-pin RDS(on) [m] Voltage [V] 600 650 Series 0-59 60-89 90-149 C7 17/40 60 99 70 99 65 95 P6 C7 19/45 150-199 200-299 200-299 TO-247 4-pin asymmetric leads RDS(on) [m] Voltage [V] Series 0-59 60-89 90-149 150-199 600 P7 24/37/45 60/80 99/120 180 300-400 IPAK RDS(on) [m] Voltage [V] Series 600 CE 800 950 0-59 60-89 90-149 P7 200-299 300-400 P7 * ES available, SOP second half 2020 1000/1500 2100 2000/2400 3300/4500 600 750 900/1200/1400 450 750 1200 1000 CE www.infineon.com/coolmos-latest-packages 146 150-199 2000/3700 ACTIVE & PREFERRED For more details on the product, click on the part number. IPAK Short Lead RDS(on) [m] 600 650 700 800 Series 0-59 60-89 90-149 150-199 200-299 CE PFD7 300-400 401-600 601-899 900-1500 >1500 400 460 650/800 1000/1500 2100/3400 360 600 210/280 CE 400 P7 360/600 1000 650 900/1400 CE P7 1000 500-950 V MOSFETs Voltage [V] 950/1400 2000 900/1200/1400 2000/2400 601-899 900-1500 >1500 750 900/1200/1400 2000 950/1400 2000 600 750 300-400 401-600 360 450/600 WBG semiconductors IPAK Short Lead with ISO Standoff RDS(on) [m] 700 Series 0-59 60-89 90-149 150-199 200-299 P7 CE 600 Discrete IGBTs Voltage [V] DPAK CE 600 60-89 90-149 150-199 200-299 300-400 401-600 601-899 900-1500 >1500 280 380 500 650/800 950/1400 2000/3000 280 360 600 CE 400 460 650/800 1000/1500 2100/3400 P6 380 600 1000/1500 2000 P7 180 C7 180 CFD7 170 PFD7 C7 650 700 190 360 * 360 600 225 CE 650 1000/1500 CFD2 400 420 660 950/1400 CFDA 420 660 P7 360 CE 280 P7 800 280 210/280 360 Intelligent switches and input ICs 500 0-59 600 900/1400 600 950/1400 2000 900/1200/1400 2000/2400 3300/4500 450/600 750 C3 900/1300 2700 CE 1000/1400 2800 900 C3 1200 950 P7 750 1200 2000 300-400 401-600 601-899 900-1500 >1500 340 500 Microcontrollers 450 Gate driver ICs Series Power ICs RDS(on) [m] Voltage [V] IPAK RDS(on) [m] 600 CPA 650 CFD2 700 CE 900 C3 0-59 60-89 90-149 200-299 99 www.infineon.com/coolmos-latest-packages *Coming soon 150-199 199 XENSIVTM sensors Series 950 1200 ACTIVE & PREFERRED Packages Voltage [V] Applications 20-300 V MOSFETs CoolMOSTM product portfolio For more details on the product, click on the part number. 147 CoolMOSTM product portfolio DPAK RDS(on) [m] Voltage [V] 600 650 800 900 Series 0-59 60-89 90-149 150-199 C7 P7 CPA CFD7 40 45 60 60/80 40 55 45 180 180 199 65 99/120 99/120 99 20/105 125/145 95/125 110 110 99 * */115 C7 CFD2 CFDA CFD7A C3 C3 70 50 * * 170 190 150/190 150/190 200-299 300-400 280 299 210 280 225 360 401-600 601-899 900-1500 >1500 360 310 310 230 * * 290 660 340 DPAK 7-pin RDS(on) [m] Voltage [V] Series 0-59 60-89 90-149 650 CFD7A 50 * * 75 * * 99 * */115 150-199 200-299 300-400 401-600 601-899 900-1500 >1500 401-600 601-899 900-1500 >1500 401-600 601-899 900-1500 >1500 300-400 380 360 401-600 500 600 601-899 800 900-1500 950 >1500 400 360 * 380 460 650 1000/1500 650 660 750 750 650 650 800 750 1000/1500 900 900/1200/1400 900/1300 1000/1400 1000/1200 1200 601-899 900-1500 230 * * Double DPAK (DDPAK) RDS(on) [m] Voltage [V] Series 0-59 60-89 90-149 150-199 200-299 600 G7 50 80 102/125 150/190 Voltage [V] Series 0-59 60-89 90-149 150-199 200-299 600 S7 10 * 60-89 90-149 60/80 60 99/120 99/120 150-199 190 160/180 180 200-299 280 280 65 125 99/125 95/125 170 160/190 190 280 230/280 225 110 150/190 300-400 QDPAK RDS(on) [m] 300-400 TO-220 FullPAK RDS(on) [m] Voltage [V] Series 500 CE P7 C7 CE CFD7 P6 C7 CE CFD2 P7 P7 C3 CE C3 P7 600 650 700 800 900 950 0-59 45 280 290 400 310 360 360 310 340 600 420 450/600 450/600 450 460 500 450 2700 TO-220 FullPAK Narrow Lead RDS(on) [m] Voltage [V] 500 600 650 700 800 Series CE CE P7 PFD7 CE P7 P7 0-59 60-89 90-149 125 www.infineon.com/coolmos-latest-packages *Coming soon * * ES available, SOP second half 2020 148 150-199 200-299 300-400 401-600 500 180 280 210/280 360 360 600 280 360 360 450/600 450 >1500 650/800 650 750 900 ACTIVE & PREFERRED For more details on the product, click on the part number. Applications CoolMOSTM product portfolio TO-Leadless Series 0-59 60-89 90-149 150-199 G7 S7 G7 28/50 22/40 33 80 65 102/125 150 105 195 Voltage [V] Series 0-59 60-89 90-149 150-199 200-299 300-400 500 CE 190 280 380 280 360 650 300-400 401-600 601-899 900-1500 >1500 900-1500 >1500 500-950 V MOSFETs 600 200-299 20-300 V MOSFETs RDS(on) group [m] Voltage [V] TO-220 RDS(on) [m] 99/120 160/180 60 99/120 180 99/125 160/190 280 90/125 170 280 95/125 190 225 110 150/190 310 150/190 310 P6 CFD7 70 CPA 650 800 900 600 360 99 S7 22 C7 45 65 CFD2 CFDA 50 99/110/115 CFD7A 50 * * 99 * */115 * * P7 280 C3 290 360 420 660 450/600 750 450 650 900/1300 800 1000/1200 601-899 900-1500 340 C3 Discrete IGBTs 600 60/80 40 900/1200/1400 Power ICs C7 601-899 WBG semiconductors P7 401-600 TO-220 FullPAK Wide Creepage RDS(on) [m] 600 700 Series 0-59 60-89 90-149 150-199 200-299 300-400 401-600 P7 180 280 360 600 CE 190 280 380 CE >1500 600 600 Intelligent switches and input ICs Voltage [V] 950 ThinPAK 5x6 0-59 60-89 90-149 150-199 200-299 300-400 401-600 P6 360 PFD7 360 600 401-600 601-899 900-1500 >1500 650 1000/1500 Microcontrollers 600 Series Gate driver ICs RDS(on) [m] Voltage [V] ThinPAK 8x8 RDS(on) [m] 0-59 60-89 90-149 150-199 200-299 300-400 P7 65/85 105/125 185 285 365 C7 65 104/125 185 CFD7 75 P6 650 C7 70 99/130 CFD2 www.infineon.com/coolmos-latest-packages *Coming soon * * ES available, SOP second half 2020 185 225 180 210 195 230 165 210 601-899 900-1500 >1500 XENSIVTM sensors 600 Series 340 ACTIVE & PREFERRED Packages Voltage [V] For more details on the product, click on the part number. 149 CoolMOSTM nomenclature Nomenclature Power MOSFETs (until 2005) S P P 20 N 60 C Company S = Formerly Siemens 3 Specifications C3 = CoolMOSTM C3 S5 = CoolMOSTM S5 Device P = Power MOSFET Breakdown voltage Divided by 10 (60x10 = 600 V) Package type A = TO-220 FullPAK B = TO-263 (D2PAK) D = TO-252 (DPAK) I = TO-262 (I2PAK) N = SOT-223 P = TO-220 U = TO-251 (IPAK) W = TO-247 Z = TO-247 4-pin Technology N = N-channel transistors Continuous drain current (@ TC = 25C) [A] Power MOSFETs (from October 2015 onwards) I P DD 80 R 190 P7 Reliability grade blank = Industrial A = Automotive S = Standard Company I = Infineon Device P = Power MOSFET Series name (2-4 digits) In this case CoolMOSTM P7 (max. digits e.g. CFD7) Package type (max. 2 digits) A = TO-220 FullPAK B = TO-263 (D2PAK) C = Bare die D = TO-252 (DPAK) I = TO-262 (I2PAK) L = ThinPAK 8x8 N = SOT-223 P = TO-220 S = TO-251 (IPAK Short Lead) U = TO-251 (IPAK Long Lead) W = TO-247 Z = TO-247 4-pin T = TO-Leadless DD = TO-252 (Double DPAK) AW = TO-220 (Wide Creepage) AN = TO-220 (Narrow Lead) LS = ThinPAK 5x6 LK = ThinPAK 5x6 Kelvin source DQ = TO-252 (Quadruple DPAK) SA = TO-251 (IPAK Short Lead with ISO Standoff) ZA = TO-247 4-pin asymmetric RDS(on) [m] R = RDS(on) As a seperator between voltage und RDS(on) Breakdown voltage Divided by 10 (80x10 = 800 V) Automotive MOSFETs I Company I = Infineon Device P = Power MOSFET Package type B = TO-263 (D2PAK) D = TO-252 (DPAK) I = TO-262 (I2PAK) P = TO-220 W = TO-247 BE= TO-263 (D2PAK 7-pin) 150 P P 60 R 099 C P A Automotive Series name CoolMOSTM CP, CoolMOSTM CFD, CoolMOSTM C3, CoolMOSTM CFD7 RDS(on) [m] R = RDS(on) Breakdown voltage Divided by 10 (60x10 = 600 V) For more details on the product, click on the part number. Applications 20-300 V MOSFETs 500-950 V MOSFETs WBG semiconductors Discrete IGBTs Power ICs Useful links and helpful information Microcontrollers Gate driver ICs Further information, datasheets and documents www.infineon.com/coolmos www.infineon.com/coolmos-latest-packages www.infineon.com/coolmos-automotive www.infineon.com/gan Intelligent switches and input ICs Infineon support for high voltage MOSFETs XENSIVTM sensors Evaluationboards and simulation models www.infineon.com/coolmos-boards www.infineon.com/powermosfet-simulationmodels Packages Simulation For more details on the product, click on the part number. 151 Wide bandgap semiconductors CoolGaNTM e-mode HEMTs CoolGaNTM 400 V e-mode GaN HEMTs CoolGaNTM 600 V e-mode GaN HEMTs CoolGaNTM product portfolio Silicon carbide CoolSiCTM silicon carbide MOSFETs 650 V CoolSiCTM silicon carbide MOSFETs 1200 V CoolSiCTM product portfolio CoolSiCTM Schottky diodes CoolSiCTM Schottky diodes 650 V CoolSiCTM Schottky diodes 1200 V SiC diodes product portfolio Silicon power diodes For more details on the product, click on the part number. 152 Packages For more details on the product, click on the part number. 153 XENSIVTM sensors Microcontrollers Gate driver ICs Intelligent switches and input ICs Power ICs Discrete IGBTs WBG semiconductors 500-950 V MOSFETs 20-300 V MOSFETs Applications Wide bandgap semiconductors Wide bandgap semiconductors Gallium nitride (GaN) and silicon carbide (SiC) The key to the next essential step towards an energy-efficient world is to use new materials, such as wide bandgap semiconductors that allow for greater power efficiency, smaller size, lighter weight, lower overall cost - or all of these together. Infineon, with its unique market position of being currently the only company offering silicon (Si),silicon carbide (SiC)andgallium nitride (GaN)devices, is the customer's first choice in all segments. CoolGaNTM - ultimate efficiency and reliability Compared to silicon (Si), the breakdown field of Infineon's CoolGaNTM enhancement mode (e-mode) HEMTs is ten times higher and the electron mobility is double. Both the output charge and gate charge are ten times lower than with Si and the reverse recovery charge is almost zero which is key to high-frequency operations. GaN is the best-suited technology in hard-switching as well as resonant topologies, and is enabling new approaches in current modulation. Infineon's GaN solution is based on the most robust and performing concept in the market - the enhancement-mode concept - offering fast turn-on and turn-off speed. CoolGaNTM products focus on high performance and robustness, and add significant value to a broad variety of systems across many applications such as server, telecom, hyperscale data centers, wireless charging, adapter/charger, and audio. CoolGaNTM switches are easy to design-in with the matching GaN EiceDRIVERTM gate driver ICs from Infineon. CoolSiCTM - revolution to rely on Silicon carbide (SiC) has a wide bandgap of 3 electronvolts (eV) and a much higher thermal conductivity compared to silicon. SiC-based MOSFETs are best-suited for high-breakdown, high-power applications that operate at higher frequencies compared to traditional IGBTs. CoolSiCTM MOSFETs come along with a fast internal freewheeling diode, thus making hard commutation without additional diode chips possible. Due to its unipolar character, the MOSFETs show very low, temperature-independent switching and low conduction losses, especially under partial load conditions. Based on proven, high-quality volume manufacturing, Infineon's silicon carbide solutions combine revolutionary technology with benchmark reliability - for our customers' success today and tomorrow. The offering is completed by EiceDRIVERTM SiC MOSFET gate driver ICs based on Infineon's successful coreless transformer technology. www.infineon.com/wbg For more details on the product, click on the part number. 154 Packages For more details on the product, click on the part number. 155 XENSIVTM sensors Microcontrollers Gate driver ICs Intelligent switches and input ICs Power ICs Discrete IGBTs WBG semiconductors 500-950 V MOSFETs 20-300 V MOSFETs Applications CoolGaNTM CoolGaNTM e-mode HEMTs Tailor-made for the highest efficiency and power density in switch mode power supplies In comparison to the next best silicon alternative, CoolGaNTM enables higher power density and the highest efficiency, especially in the partial load range, through novel topologies such as the CCM totem-pole PFC stage. GaN e-mode HEMT performance features a low reverse recovery charge and excellent dynamic performance in reverse conduction compared to silicon FET solutions. This enables more efficient operation at established frequencies, and much higher frequency operation which can improve power density by shrinking the size of passive components. CoolGaNTM enables doubled output power in a given energy storage slot size, freeing up space and realizing higher efficiency at the same time. Infineon's CoolGaNTM comes with industry-leading reliability. During the quality management process, it is not only the device which is thoroughly tested but also its behavior in the application environment. The performance of CoolGaNTM goes beyond other GaN products in the market. Features Low output charge and gate charge No reverse recovery charge Design benefits High power density, small and light design High efficiency in resonant circuits New topologies and current Advantages Operational expenses (OPEX) and capital expenditure (CAPEX) reduction BOM and overall cost savings modulation Fast and (near-)lossless switching Infineon leverages its unique portfolio of high- and low-voltage MOSFETs, driver ICs and digital controllers to complement its CoolGaNTM product line, thus enabling full exploit for GaN benefits. The highest quality The qualification of GaN switches requires a dedicated approach, well above existing silicon standards Infineon qualifies GaN devices well beyond industry standards Application profiles are an integral part of the qualification process Failure models, based on accelerated test conditions, ensure target lifetime and quality are met Infineon sets the next level of wide bandgap quality Application profile QRP - quality requirement profile Degradation models Rel. investigation at development phase Qualification plan Released product CoolGaNTM e-mode HEMTs overview CoolGaNTM e-mode HEMTs CoolGaNTM 600 V e-mode HEMTs CoolGaNTM 400 V e-mode HEMTs Single-channel functional and reinforced isolated gate-driver ICs for enhancement-mode GaN HEMTs Perfect fit for enhancement-mode GaN HEMTs 1EDF5673K 1EDF5673F 1EDS5663H www.infineon.com/gan For more details on the product, click on the part number. 156 CoolGaNTM 400 V and 600 V e-mode GaN HEMTs - bringing GaN technology to the next level WBG semiconductors 500-950 V MOSFETs Infineon's CoolGaNTM 400 V and 600 V e-mode HEMTs enable more than 98 percent system efficiency and help customers to make their end products smaller and lighter. Driving enhancement-mode devices requires some additional features when choosing the correct gate driver IC, however, CoolGaNTM technology does not require customized ICs. Infineon offers three new members of a single-channel galvanically isolated gate driver IC family. The new components are a perfect fit for e-mode GaN HEMTs with non-isolated gate (diode input characteristic) and low threshold voltage, such as CoolGaNTM. Complete support of all requirements specific to e-mode GaN HEMTs operation: Low driving impedance (on-resistance 0.85 source, 0.35 sink) Resistor programmable gate current for steady on-state (typically 10 mA) Programmable negative gate voltage to completely avoid spurious turn-on in half-bridges High voltage CoolGaNTM High voltage CoolGaNTM OptiMOSTM OptiMOSTM OptiMOSTM OptiMOSTM CoolMOSTM High voltage CoolGaNTM High voltage CoolGaNTM Gate driver ICs High voltage CoolGaNTM Intelligent switches and input ICs EMI filter 2 x EiceDRIVERTM 2EDF7275 EiceDRIVERTM 2EDF7275 4x GaN EiceDRIVERTM 1EDS5663H* LLC controller Microcontrollers PFC controller 2x GaN EiceDRIVERTM 1EDF5673* XENSIVTM sensors *GaN EiceDRIVERTM ICs are single-channel products www.infineon.com/gan Packages AC LINE CoolMOSTM Synchronous rectifier Resonant LLC Power ICs High voltage CoolGaNTM Discrete IGBTs Block diagram: high-efficiency GaN switched mode power supply (SMPS) Totem pole Full-bridge PFC Applications 20-300 V MOSFETs CoolGaNTM For more details on the product, click on the part number. 157 CoolGaNTM 400 V CoolGaNTM 400 V e-mode GaN HEMTs Class D output stage offering the best audio experience CoolGaNTM 400 V enables smoother switching and more linear class D output stage by offering low/linear Coss, zero Qrr, and normally-off switch. Ideal class D audio amplifiers offer 0 percent distortion and 100 percent efficiency. What impairs the linearity and power loss is highly dependent on switching characteristics of the switching device. Infineon's CoolGaNTM 400 V breaks through the technology barrier by introducing zero reverse recovery charge in the body diode and very small, linear input and output capacitances. In addition, the e-mode concept offers fast turn-on and turn-off speed. This feature also simplifies pairing CoolGaNTM with the IRS20957SPBF class D controller and therefore enables faster go-to-market. CoolGaNTM for class D audio solutions CoolGaNTM 400 V is tailored for premium HiFi home audio, professional, and aftermarket car audio systems where end users demand every detail of their high resolution soundtracks. These have been conventionally addressed by bulky linear amplifiers or tube amplifiers. With CoolGaNTM 400 V as the class D output stage, audio designers will be able to deliver the best audio experience to their prospective audio fans. CoolGaNTM 400 V devices in DSO-20-87 and HSOF-8-3 (TOLL-leadless) package have been tested in class D audio amplifier applications on 200 W + 200 W dual-channel system designs. Key features Ultralow and linear Coss 400 V power devices Zero Qrr E-mode transistor - normally-off switch Key benefits Clean switching performance Narrow dead time for better THD Easy to use: compatible with the IRS20957SPBF class D audio control IC The CoolGaNTM 400 V devices benefit from the engineering expertise Infineon has made towards challenging applications, such as telecom rectifiers and SMPS servers, where CoolGaNTM technology proved to be highly reliable. It is the most robust and performing concept in the market. The CoolGaNTM 400 V portfolio is built around class D audio requirements, with high-performing SMD packages to fully exploit the benefits of GaN technology. www.infineon.com/gan For more details on the product, click on the part number. 158 20-300 V MOSFETs CoolGaNTM 600 V e-mode GaN HEMTs The highest efficiency and power density with reduced system costs WBG semiconductors 500-950 V MOSFETs The e-mode concept offers fast turn-on and turn-off speed, as well as a better path towards integration. CoolGaNTM 600 V e-mode HEMTs enable simpler and more cost-effective half-bridge topologies. As e-mode based products reach maturity, CoolGaNTM 600 V HEMTs are gaining growing prominence thanks to their potential. The CoolGaNTM 600 V series is manufactured according to a specific, GaN-tailored qualification process which goes far beyond the standards for silicon power devices. CoolGaNTM 600 V is designed for datacom and server SMPS, telecom rectifiers, as well as mobile chargers and adapters, and can be used as a general switch in many other industrial and consumer applications. It is the most rugged and reliable solution in the market. The CoolGaNTM portfolio is built around high performing SMD packages to fully exploit the benefits of GaN. Efficiency versus load (fsw = 65 kHz)* 100 99.07 99.00 98.90 Power ICs Efficiency [%] 99 98.75 98 IGO60R070D1 Measured values All available boards within +/- 0.1% 97 Intelligent switches and input ICs Flat efficiency > 99 % over wide load range 96 250 500 750 1000 1250 1500 1750 2000 2250 2500 Output power [W] 400 V Q1 Gate driver ICs * No external power supplies - everything included. Vin = 230 VAC, Vout = 390 VDC, tambient = 25 C Full-bridge totem pole L1 99.33 99.33 99.31 99.25 99.17 99.18 Demonstration board 2.5 kW totem pole PFC board: EVAL_2500W_PFC_GAN_A Microcontrollers Q3 AC IN Q2 Q4 2 x 70 m CoolGaNTM in DSO-20-85 2 x 33 m CoolMOSTM XENSIVTM sensors Applications Telecom Server Datacom Adapter and charger Wireless charging SMPS Discrete IGBTs CoolGaNTM for PFC CoolGaNTM enables the adoption of simpler half-bridge topologies (including the elimination of the lossy input bridge rectifier). The result is record efficiency (>99%) with a potential for BOM savings. CoolGaNTM for resonant topologies In resonant applications, ten times lower Qoss and QG enables high-frequency operations (>1 MHz) at the highest efficiency levels Linear output capacitance leads to 8 to 10 times lower dead time Devices can be easily paralleled Power density can be pushed even further by optimizing the thermal performance CoolGaNTM enables to push the efficiency forward, thus enabling high power density e.g., in low-power chargers/adapters Applications CoolGaNTM 600 V Packages www.infineon.com/gan For more details on the product, click on the part number. 159 CoolGaNTM portfolio CoolGaNTM 400 V e-mode GaN HEMTs DSO-20-87 Top-side cooling Package Pmax RDS(on) max. 70 m HSOF-8-3 (TO-Leadless) up to 500 W up to 200 W IGOT40R070D1 * * IGT40R070D1 E8220 CoolGaNTM 600 V e-mode GaN HEMTs Package DSO-20-85 Bottom-side cooling RDS(on) DSO-20-87 Top-side cooling HSOF-8-3 TO-Leadless LSON-8-1 DFN 8x8 42 m IGO60R042D1 * * IGOT60R042D1 * * IGT60R042D1 * * 70 m IGO60R070D1 IGOT60R070D1 IGT60R070D1 IGLD60R070D1 IGT60R190D1S * IGLD60R190D1 190 m IGT60R190D1 * * Infineon's CoolGaNTM devices, driven by single-channel isolated gate driver ICs from the GaN EiceDRIVERTM family, aim to unlock the full potential of GaN technology. GaN EiceDRIVERTM family product portfolio Product Package Input to output isolation Isolation class Rating Surge testing Certification Propagation delay accuracy Typ. high level Typ. low level (sourcing) out- (sinking) output put resistance resitance SP number 1EDF5673K LGA, 13-pin, 5x5 mm functional VIO = 1.5 kVDC n.a. n.a. -6 ns/+7ns 0.85 0.35 SP002447622 1EDF5673F DSO, 16-pin, 150 mil functional VIO = 1.5 kVDC n.a. n.a. -6 ns/+7ns 0.85 0.35 SP003194020 1EDS5663H DSO, 16-pin, 300 mil reinforced VIOTM = 8 kVpk VISO = 5.7 kVrms VISOM > 10 kVpk VDE0884-10 UL1577 -6 ns/+7ns 0.85 0.35 SP002753980 www.infineon.com/gan www.infineon.com/gan-eicedriver *Standard grade * * Coming soon 160 For more details on the product, click on the part number. Applications 20-300 V MOSFETs 500-950 V MOSFETs WBG semiconductors Discrete IGBTs Power ICs Intelligent switches and input ICs Nomenclature CoolGaNTM Company I = Infineon Technology G = GaN Package type LD = DFN 8 x 8-LSON T = TOLL O = DSO20-BSC OT = DSO20-TSC 60 R 070 D 1 Reliability grade blank = Industrial A = Automotive S = Standard Generation 1 = 1st generation Product type D = Discrete S = System RDS(on) [m] R = RDS(on) XENSIVTM sensors Voltage Divided by 10 (60x10 = 600 V) T Gate driver ICs G Microcontrollers I Packages www.infineon.com/gan For more details on the product, click on the part number. 161 Silicon carbide Revolution to rely on Silicon carbide (SiC) devices belong to the so-called wide bandgap semiconductor group, which offers a number of attractive characteristics for high voltage power semiconductors when compared to commonly used silicon (Si). In particular, the much higher breakdown field strength and thermal conductivity of silicon carbide allow developing devices which by far outperform the corresponding silicon-based ones, and enable efficiency levels unattainable otherwise. Infineon's portfolio of SiC devices covers 650 V to 1200 V Schottky diodes as well as the revolutionary CoolSiCTM MOSFETs. EiceDRIVERTM SiC MOSFET gate driver ICs are well-suited to drive SiC MOSFETs, especially Infineon's ultra-fast switching CoolSiCTM SiC MOSFETs. These gate drivers incorporate most important key features and parameters for SiC driving such as tight propagation delay matching, precise input filters, wide output-side supply range, negative gate voltage capability, active Miller clamp, DESAT protection, and extended CMTI capability. www.infineon.com/coolsic-mosfet www.infineon.com/SiCgd For more details on the product, click on the part number. 162 20-300 V MOSFETs CoolSiCTM silicon carbide MOSFETs 650 V Delivering reliable and cost effective top performance Dynamic behavior Ease of use 35 30 30 25 20 15 10 5 0 WBG semiconductors 25 20 15 10 5 0 CoolMOSTM CFD7* CoolSiCTM 650 V CoolMOSTM CFD7* CoolSiCTM 650 V Power ICs Quality 35 RDS(on)*Qoss [m * C] RDS(on)*Qrr [m * C] Reliability Robustness Discrete IGBTs Robustness for continuous hard commutation topologies Leveraging SiC's material properties Performance 500-950 V MOSFETs Silicon carbide physical characteristics, from wide bandgap to electron mobility and thermal conductivity, provide the basis to engineer high performance semiconductor technologies and products. The CoolSiCTM MOSFETs from Infineon maximize the advantages of silicon carbide, offering a high performance product that also meets power electronics design requirements, like reliability and ease of use. As per performance, the CoolSiCTM MOSFETs show low RDS(on) dependency with temperature and low switching losses. The reliability is built on technological strengths and on flawless quality processes. Some aspects of Infineon's SiC technology, like a superior gate oxide reliability, excellent thermal behavior, advanced avalanche ruggedness and short circuit capabilities contribute to the robustness of the device. Infineon's benchmark quality was further improved for silicon carbide, with an application-focused qualification scope exceeding standards, complemented by SiC-specific screening measures. Additional unique features, like 0 V turn-off VGS, wide VGS range, and the use of silicon MOSFET drivers and driving schemas make CoolSiCTM MOSFETs 650 V easy to integrate and use. Static behavior Applications CoolSiCTM / Silicon carbide devices * Best CoolMOSTM SJ MOSFET reference in the market Intelligent switches and input ICs CoolSiCTM MOSFETs can enable streamlined and cost-optimized system designs with less components, weight and size, reaching high energy efficiency and power density. For instance, the CoolSiCTM MOSFETs boast a low level of Qrr, roughly 80% less of the best CoolMOSTM reference in the market, the CoolMOSTM CFD7. This ensures the robustness of the body diode, making the CoolSiCTM MOSFETs suitable for topologies with continuous hard commutation, like, the high efficiency Totem Pole PFC, a topology that enables > 99% of efficiency. High efficiency CoolSiCTM totem-pole PFC in server SMPS (switched mode power supply) CoolSiCTM 650 V 600 V CoolMOSTM S7 CoolSiCTM 650 V CoolSiCTM 650 V OptiMOSTM OptiMOSTM CoolSiCTM 650 V 600 V CoolMOSTM S7 CoolSiCTM 650 V CoolSiCTM 650 V OptiMOSTM OptiMOSTM EMI filter Microcontrollers AC LINE Synchronous rectifier Resonant LLC Gate driver ICs Totem pole Full-bridge PFC PFC controller XENSIVTM sensors 2x EiceDRIVERTM 2EDF7275 EiceDRIVERTM 2EDF9275F EiceDRIVERTM 2EDF7275F 2x EiceDRIVERTM 2EDS9265H LLC controller Packages www.infineon.com/coolsic-mosfet www.infineon.com/SiCgd For more details on the product, click on the part number. 163 CoolSiCTM / Silicon carbide devices CoolSiCTM silicon carbide MOSFETs 1200 V Infineon's CoolSiCTM technology enables radically new product designs Silicon carbide (SiC) opens up new degrees of freedom for designers to harness unseen levels of efficiency and system flexibility. In comparison to traditional silicon-based switches like IGBTs and MOSFETs, the SiC MOSFET offers a series of advantages. These include the low switching losses with 1200 V and 650 V switches, very low reverse recovery losses of the internal commutation proof body diode, temperature-independent low switching losses, and threshold-free onstate characteristics. Based on volume experience and compatibility know-how, Infineon introduces the revolutionary SiC technology which enables radically new product designs with high performance and high reliability. CoolSiCTM MOSFET products are targeted for automotive, photovoltaic inverters, battery charging, EV charging, industrial drives, UPS, SMPS, and energy storage. Power management AC/DC DC/DC Gate driver 3-phase inverter Status indication XMC USB, Serial microcontroller COM Maintenance interface Hall & GMR sensors M Current sensing Current sensing Position sensing Features and benefits Key features Key benefits Very low switching losses Best-in-class system performance Superior gate-oxide reliability Efficiency improvement and reduced cooling effort Threshold-free on-state characteristic Longer lifetime and higher reliability Wide gate-source voltage range Enables higher frequency operation, allowing the increase in power density Benchmark gate threshold voltage, VGS(th) = 4.5 V Reduction in system cost Fully controllable dV/dt Ease of use Commutation robust body diode, ready for synchronous rectification TO-247 4-pin package contains an additional connection to the source (Kelvin connection) that is used as a reference potential for the gate driving voltage, thereby eliminating the effect of voltage drops over the source inductance. The result is even lower switching losses than for the TO-247 3-pin version, especially at higher currents and higher switching frequencies. The gate-source pin of the TO-263 7-pin package, similar as of the TO-247 4-pin, eliminates the effect of voltage drops over the source inductance, therefore further reduce the turn-on switching loss. TO-263 7-pin package minimizes the leakage inductance between drain and source, reduce the risk of high turn-off voltage overshoot. www.infineon.com/coolsic-mosfet www.infineon.com/SiCgd For more details on the product, click on the part number. 164 Applications 20-300 V MOSFETs 500-950 V MOSFETs WBG semiconductors Discrete IGBTs TO-247 RDS(on) TO-247-4 D2PAK 7-pin Gate Driver for CoolSiCTM 30 m IMW120R030M1H IMZ120R030M1H IMBG120R030M1H * 1EDC60H12AH 45 m IMW120R045M1 - lead product IMZ120R045M1- lead product IMBG120R045M1H * 1EDC20I12MH 60 m IMW120R060M1H IMZ120R060M1H IMBG120R060M1H * 1ED020I12-F2 90 m IMW120R090M1H IMZ120R090M1H IMBG120R090M1H * 2ED020I12-F2 140 m IMW120R140M1H IMZ120R140M1H IMBG120R140M1H * 1ED3124MU12H * 220 m IMW120R220M1H IMZ120R220M1H IMBG120R220M1H * 1ED3491MU12M * 350 m IMW120R350M1H IMZ120R350M1H IMBG120R350M1H * 1ED3890MU12M * Power ICs Package ACTIVE & PREFERRED Intelligent switches and input ICs CoolSiCTM MOSFET 1200 V I M W 120 R 45 M1 Gate driver ICs CoolSiCTM MOSFET nomenclature H Device M = MOSFET H = High gate voltage range Package Type W = TO-247 Z = TO-247 4-pin BG = D2PAK 7-pin Series name M1 = Generation 1 Breakdown voltage Divided by 10 120 = 1200 V R = RDS(on) As a separator between voltage und RDS(on) Microcontrollers Company I = Infineon XENSIVTM sensors RDS(on) [m] * Coming soon Packages www.infineon.com/coolsic-mosfet www.infineon.com/SiCgd For more details on the product, click on the part number. 165 CoolSiCTM Schottky diodes CoolSiCTM Schottky diodes The differences in material properties between silicon carbide and silicon limit the fabrication of practical silicon unipolar diodes (Schottky diodes) to a range up to 100-150 V, with a relatively high on-state resistance and leakage current. In SiC, Schottky diodes can reach a much higher breakdown voltage. Infineon is the world's first SiC discrete power supplier. Infineon offers products up to 1200 V in discrete packages and up to 1700 V in modules. The long market presence and experience enable Infineon to deliver highly reliable, industry-leading SiC performance. With over 10 years of pioneering experience in developing and manufacturing SiC diodes, Infineon's latest CoolSiCTM Schottky diode generation 6 family sets benchmark in quality, efficiency and reliability. Features Advantages Benefits Applications No reverse Low turn-off losses Reduction of CoolMOSTM System efficiency Server Telecom Solar UPS EV charging Energy storage PC power Motor drives Lighting CAV recovery charge Purely capacitive switching High operating temperature (Tj, max 175C) or IGBT turn-on loss Switching losses independent from load current, switching speed and temperature improvement compared to Si diodes Reduced cooling requirements Enabling higher frequency/increased power density Higher system reliability due to lower operating temperature Reduced EMI I [A] T=125C, VDC= 400 V, IF=6 A, di/dt=200 A/s 10 8 6 4 2 0 -2 -4 -6 -8 -10 0.07 0.1 0.13 0.16 0.19 0.22 0.25 Time [s] SiC Schottky diode Ultrafast Si-pin diode Si-pin double diode (2*300 V) Reverse recovery charge of SiC Schottky diodes versus Si-pin diodes The majority of carrier characteristics imply no reverse recovery charge and the only contribution to the switching losses comes from the tiny displacement charge of capacitive nature. In the same voltage range, silicon devices have a bipolar component resulting in much higher switching losses. The graph shows the comparison between various 600V devices. 95.0 Efficiency [%] 94.5 Improved system efficiency (PFC in CCM mode operation, full load, low line) The fast switching characteristics of the SiC diodes provide clear efficiency improvements at system level. The performance gap between SiC and high-end silicon devices increases with the operating frequency. 94.0 93.5 93.0 92.5 92.0 91.5 91.0 60 120 180 Switchting frequency [kHz] Infineon SiC 6 A Comp. 1 6 A 240 Comp. 2 6 A www.infineon.com/sic For more details on the product, click on the part number. 166 20-300 V MOSFETs CoolSiCTM Schottky diodes 650 V CoolSiCTM Schottky diodes 650 V G6 and G5 500-950 V MOSFETs The new CoolSiCTM Schottky diode 650 V G6 product family is built over the strong characteristics of the previous generation G5, fully leveraging technology and process innovation to propose the best efficiency and zero price/performance products to date. Foundation technology - CoolSiCTM Schottky diodes 650 V G5 WBG semiconductors The established CoolSiCTM Schottky diodes G5 product family has been optimized after all key aspects including junction structure, substrate and die attach. It represents a well-balanced product family which offers state-of-the-art performance and high surge current capability at a competitive cost level. Discrete IGBTs Innovation: optimized junction, substrate and die attach Infineon's SiC Schottky diode generation 5 is optimized with regard to all key aspects relevant for high-power and high-efficiency SMPS applications. Al wire bond Backside and packaging Die attach: diffusion soldering On the backside, package level diffusion soldering is introduced, which significantly improves the thermal path between lead frame and the diode, enhancing the thermal performance. With the same chip size and power dissipation, the junction temperature is reduced by 30C. ent urr IF (A) 25 Power ICs ge c 30 20 15 10 0 0.00 2.00 4.00 8.00 10.00 12.00 14.00 VF (V) Combined characteristic Schottky diode forward characteristic Bipolar PN diode forward characteristic Gate driver ICs 60 Intelligent switches and input ICs 5 50 40 30 20 0 0 2 4 VF [V] Generation 5 6 8 Generation 2, 3 Diffusion soldering RthJC=2.0 K/W Microcontrollers 10 XENSIVTM sensors 110 m 35 IF [A/mm2] SiC substrate Substrate: thin wafer technology On the substrate level, Infineon introduced the thin wafer technology. At the later stage of our SiC diode production, the thin wafer process is used to reduce the wafer thickness by about two-thirds, which significantly reduces the substrate resistance contribution, thus, improving both forward voltage (VF) and thermal performance. 40 sur Junction: merged PN structure On the junction level, it has an optimized merged PN structure. Compared to competitors, Infineon's SiC diode Al has an additional P-doped area, which, together with Ti the N-doped EPI layer, forms a PN junction diode. Thus, p+ p+ p+ p+ p+ it is a combination of Schottky diode and PN junction diode. Under normal conditions it works like a standard Schottky diode. Under abnormal conditions such as EPI lighting, AC line drop-out, it works like a PN junction layer diode. At high current level, the PN junction diode has a significantly lower forward voltage (VF) than the Schottky diode, which leads to less power dissipation, thus significantly improving the surge current capability. Field stop layer Applications CoolSiCTM Schottky diodes RthJC=1.5 K/W Packages www.infineon.com/sic For more details on the product, click on the part number. 167 CoolSiCTM Schottky diodes Latest development - CoolSiCTM Schottky diodes 650 V G6 The CoolSiCTM Schottky diodes G6 product family introduces a novel and proprietary Schottky metal system. This contributes to the reduction of the forward voltage (VF) to levels which are difficult, determining a measurable decrease of conduction losses. Infineon's CoolSiCTM Schottky diodes enable optimum efficiency and ruggedness. Lower forward voltage (VF) means lower conduction loss, and lower capacitive charge (Qc) means lower switching loss. Qc x VF is the figure of merit for efficiency, and comparison indicates that the latest generation 6 products have the lowest Qc x VF on the market. Infineon's CoolSiCTM Schottky diodes offer a surge current robustness far better than the one offered by the most efficient products. Thus, under abnormal conditions, this surge current capability offers excellent device robustness. Efficiency comparison Relative efficiency @ 130 kHz 0.02 0.00 0.00 Efficiency difference [%] Efficiency difference [%] Relative efficiency @ 65 kHz 0.02 -0.02 -0.04 -0.06 -0.08 -1.00 -1.02 10 20 30 40 50 60 70 80 90 100 -0.02 -0.04 -0.06 -0.08 -1.00 -1.02 10 Output power [% of nominal] G6 20 30 40 50 60 70 80 90 100 Output power [% of nominal] Competitor 1 Competitor 2 Competitor 3 In terms of efficiency, the 8 A G6 device has been tested in CCM PFC. The maximum output power is 3.5 kW. The left figure shows the relative efficiency at 65 kHz, while the right figure shows the relative efficiency at 130 kHz. This shows that Infineon's CoolSiCTM Schottky diode G6 delivers better efficiency over the full load range, keeping this advantage even at 130 kHz, therefore meeting the needs of designers who want to increase the switching frequencies in their designs to attain more power density. The best price performance CoolSiCTM Schottky diodes G6 are the outcome of Infineon's continuous technological and process improvements which enable the design and development of SiC-based products, making them more price-competitive and increasing performance across generations. As a result, G6 is Infineon's best price/performance CoolSiCTM Schottky diode generation, offering the highest cost-efficiency. In addition, Infineon offers the reliability of collaborating with the industry leader. Customers can leverage Infineon's proven quality and supply chain reliability. They can benefit from "onestop-shop" advantages and maximize system performance, combining CoolSiCTM Schottky diodes with the SJ MOSFETs of the CoolMOSTM 7 family, such as 600 V C7, 650 V C7, 600 V G7, 650 V G7 and 600 V P7. Price G2* G3 G5 G6 * G2 is discontinued Performance (efficiency, density) A comprehensive portfolio The combined G6 and G5 CoolSiCTM Schottky diode 650 V diode portfolio offers a wide choice of packages and ampere class granularity to allow the best fit to application. G6 comes in double DPAK, the first top-side cooled surface mount package, which allows thermal decoupling of PCB to chip junction and enables higher power dissipation and improved system lifetime thanks to the reduced board temperature. www.infineon.com/coolsic-g6 For more details on the product, click on the part number. 168 20-300 V MOSFETs CoolSiCTM Schottky diodes 1200 V A new level of system efficiency and reliability 500-950 V MOSFETs By using hybrid Si power switch/SiC diode sets, industrial application designers will gain flexibility for system optimization compared to purely silicon-based solutions. System improvements such as higher output power, greater efficiency or higher switching frequency are enabled by SiC diodes. By implementing CoolSiCTM diodes generation 5, for example in Vienna rectifier topology, in combination with Infineon's 650 V TRENCHSTOPTM IGBTs and 650 V CoolMOSTM MOSFETs, designers can achieve outstanding system level performance and reliability. One of most commonly used topologies for EV DC charging Full-bridge LLC WBG semiconductors Vienna rectifier 6x 1200 V CoolSiCTM Schottky diode Gen5 6x 650 V CoolMOSTM/ TRENCHSTOPTM 5 4x 1200 V CoolSiCTM Schottky diode Gen5 EiceDRIVERTM Discrete IGBTs 4x 1200 V CoolSiCTM MOSFET EiceDRIVERTM PWM Generation ADC Power ICs Auxiliary power supply Key features Key benefits Zero Qrr leading to no reverse recovery losses System efficiency improvement over Si-based diodes High surge current capability up to fourteen times of the nominal current Enabling higher frequency/increased power density solutions Tight forward voltage distribution High system reliability by extended surge current Temperature-independent switching behavior Reduced cooling requirements through lower diode losses and lower case temperatures Low forward voltage (VF = 1.4 V) even at high operating temperature Intelligent switches and input ICs Features and benefits Up to 40A-rated diode Gate driver ICs System size/cost saving due to reduced heatsink requirements and smaller magnetics Available in both through-hole and SMD packages 650 V Si IGBT/Si SJ MOSFET and 1200 V SiC diode/ultrafast Si diode in a Vienna rectifier topology, fsw=48 kHz 99.0 650 V SJ MOSFET + 1200 V SiC diode (IPW65R045C7 + IDW15G120C5B) CoolMOSTM IGBT 650 V IGBT + 1200 V SiC diode (IKW50N65EH5 + IDW15G120C5B) 650 V SJ MOSFET + 1200 V Si diode (IPW65R045C7 + Vendor A) 98.0 w. SiC diode CoolMOSTM IGBT 650 V IGBT + 1200 V Si diode (IKW50N65EH5 + Vendor A) w. Si diode 97.0 SiC vs. Si diode +0.8% higher efficiency Increased output power is possible 96.5 XENSIVTM sensors Efficiency [%] Microcontrollers 98.5 97.5 96.0 0 1000 2000 Applications CoolSiCTM Schottky diodes 3000 4000 5000 Output power [W] Packages www.infineon.com/sicdiodes1200v For more details on the product, click on the part number. 169 SiC diodes product portfolio CoolSiCTM Schottky diodes 650 V G6 IF [A] TO-220 R2L ACTIVE & PREFERRED TO-247 Dual Die TO-247 Double DPAK 4 IDH04G65C6 IDDD04G65C6 6 IDH06G65C6 IDDD06G65C6 8 IDH08G65C6 IDDD08G65C6 10 IDH10G65C6 IDDD10G65C6 12 IDH12G65C6 IDDD12G65C6 * 16 IDH16G65C6 IDDD16G65C6 20 IDH20G65C6 IDDD20G65C6 CoolSiCTM Schottky diodes 650 V G5 IF [A] TO-220 R2L D2PAK R2L ThinPAK 8x8 ACTIVE TO-247 Dual Die TO-247 D2PAK R2L ThinPAK 8x8 2 IDH02G65C5 IDK02G65C5 3 IDH03G65C5 IDK03G65C5 4 IDH04G65C5 IDK04G65C5 5 IDH05G65C5 IDK05G65C5 6 IDH06G65C5 IDK06G65C5 IDL06G65C5 8 IDH08G65C5 IDK08G65C5 IDL08G65C5 9 IDH09G65C5 IDK09G65C5 10 IDH10G65C5 IDW10G65C5 IDK10G65C5 IDL10G65C5 12 IDH12G65C5 IDW12G65C5 IDK12G65C5 IDL12G65C5 16 IDH16G65C5 IDW16G65C5 20 IDH20G65C5 IDW20G65C5B IDL02G65C5 IDL04G65C5 IDW20G65C5 24 IDW24G65C5B 30/32 IDW32G65C5B IDW30G65C5 40 IDW40G65C5B IDW40G65C5 www.infineon.com/sic *For more information on the product, contact our product support 170 For more details on the product, click on the part number. Applications 20-300 V MOSFETs 500-950 V MOSFETs WBG semiconductors Discrete IGBTs TO-247 DPAK R2L IDH03SG60C IDD03SG60C 4 IDH04SG60C IDD04SG60C 5 IDH05SG60C IDD05SG60C 6 IDH06SG60C IDD06SG60C 8 IDH08SG60C IDD08SG60C 9 IDH09SG60C IDD09SG60C 10 IDH10SG60C IDD10SG60C 12 IDH12SG60C IDD12SG60C * CoolSiCTM Schottky diodes 1200 V G5 IF [A] TO-220 R2L ThinPAK 8x8 DPAK R2L D2PAK R2L Gate driver ICs 3 D2PAK Power ICs TO-247 Dual Die Intelligent switches and input ICs TO-220 R2L ACTIVE & PREFERRED TO-247 Dual Die TO-247 R2L 2 IDH02G120C5 IDM02G120C5 IDK02G120C5 5 IDH05G120C5 IDM05G120C5 IDK05G120C5 8 IDH08G120C5 IDM08G120C5 IDK08G120C5 10 IDH10G120C5 IDW10G120C5B IDWD10G120C5 IDM10G120C5 IDK10G120C5 15/16 IDH16G120C5 IDW15G120C5B IDWD15G120C5 IDK16G120C5 20 IDH20G120C5 IDW20G120C5B IDWD20G120C5 IDK20G120C5 30 IDW30G120C5B IDWD30G120C5 40 IDW40G120C5B IDWD40G120C5 Microcontrollers IF [A] ACTIVE XENSIVTM sensors CoolSiCTM Schottky diodes 600 V G3 B" in product name refers to common-cathode configuration *For more information on the product, contact our product support Packages www.infineon.com/sic For more details on the product, click on the part number. 171 SiC diodes nomenclature Nomenclature CoolSiCTM Schottky diodes G2 and G3 I D H X S G X C Company I = Infineon Specifications C = Surge current stable Device D = Diode Breakdown voltage 60 = 600 V Package Type D = DPAK H = TO-220 R2L B = D2PAK D = DPAK = TO-220 V = TO-220 FullPAK W = TO-247 G = Low thermal resistance (diffusion soldering) Technology S = SiC diode Continuous forward current [A] CoolSiCTM Schottky diodes G5 and G6 I D K X G X C 5 B Company I = Infineon B = Common-cathode configuration Device D = Diode Series name 5 = Generation 5 6 = Generation 6 Package type H = TO-220 R2L W = TO-247 K = D2PAK R2L L = ThinPAK 8x8 M = DPAK R2L WD = TO-247 R2L Specifications C = Surge current stable* Breakdown voltage 65 = 650 V 120 = 1200 V G = Low thermal resistance Continuous forward current [A] www.infineon.com/sic *Generation 172 For more details on the product, click on the part number. Applications Silicon power diodes 20-300 V MOSFETs Silicon power diodes Filling the gap between SiC diodes and emitter controlled diodes 0 Hz Rapid 1 Rapid 2 18 kHz SiC 40 kHz 100 kHz WBG semiconductors Emitter controlled diodes 500-950 V MOSFETs The Rapid diode family complements Infineon's existing high-power 600V/650V diode portfolio by filling the gap between SiC diodes and previously released emitter controlled diodes. They offer a perfect cost/performance balance and target high-efficiency applications switching between 18 and 100 kHz. Rapid 1 and Rapid 2 diodes are optimized to have excellent compatibility with CoolMOSTM and high speed IGBTs (insulated gate bipolar transistor) such as the TRENCHSTOPTM 5 and HighSpeed 3. >100 kHz Discrete IGBTs The Rapid 1 diode family Rapid 1 is forward voltage drop (VF) optimized to address low switching frequency applications between 18 kHz and 40 kHz, for example, air conditioner and welder PFC stages. Power ICs 1.35 V temperature-stable forward voltage (VF) Lowest peak reverse recovery current (Irrm) Reverse recovery time (trr) < 100 ns High softness factor Intelligent switches and input ICs The Rapid 2 diode family Rapid 2 is Qrr/trr optimized hyperfast diode to address high-speed switching applications between 40 kHz and 100 kHz, typically found in PFCs in high efficiency switch mode power supplies (SMPS) and welding machines. VF - Qrr trade-off, Rapid 1 diF/dt = 1000 A/us, Rapid 2 diF/dt = 300 A/us 98.2 97.4 98.0 97.2 97.8 97.0 97.6 96.8 97.4 IDW30E65D1 30 A competitor A 30 A competitor B Efficiency [%] 600 500 400 Efficiency [%] 97.6 900 700 Qrr [nC] PFC E 96.6 96.4 300 96.2 200 96.0 IDP08E65D2 Microcontrollers PFC Efficiency @ 60 kHz - Vin = 230 V 1000 800 Gate driver ICs Lowest reverse recovery charge (Qrr): VF ratio for best-in-class performance Lowest peak reverse recovery current (Irrm) Reverse recovery trr < 50 ns High softness factor 97.2 97.0 96.8 Competitor S 8 A competitor C 100 96.6 Competitor F 95.8 96.4 8 A competitor D 0 1.3 95.6 1.4 1.5 1.6 1.7 1.8 1.9 VF [V] 2.0 2.1 2.2 2.3 96.2 0 100 200 300 400 500 600 700 800 0 200 Output Power [W] 400 Packages www.infineon.com/rapiddiodes www.infineon.com/ultrasoftdiodes XENSIVTM sensors IDP08E65D2 For more details on the product, click on the part number. 173 Silicon power diodes Rapid 1 diodes 650V product family Continuous current Ic @TC=100C [A] TO-220 8 IDP08E65D1 15 IDP15E65D1 20 30 TO-220 FullPAK TO-247 TO-247 common cathode TO-247 advanced isolation IDV20E65D1 IDP30E65D1 IDW30E65D1 40 IDW30C65D1 IDW40E65D1 IDFW40E65D1E 60 IDW60C65D1 75 IDW75D65D1 80 IDW80C65D1 IDFW60C65D1 Rapid 2 diodes 650V product family Continuous current Ic @TC=100C [A] TO-220 TO-220 FullPAK 8 IDP08E65D2 IDV08E65D2 15 IDP15E65D2 IDV15E65D2 20 IDP20E65D2 30 IDP30E65D2 40 IDP40E65D2 80 IDV30E65D2 TO-220 common cathode TO-247 TO-247 common cathode IDW15E65D2 IDP20C65D2 IDW20C65D2 IDP30C65D2 IDW30C65D2 IDW40E65D2 IDW80C65D2 www.infineon.com/rapiddiodes For more details on the product, click on the part number. 174 Applications 20-300 V MOSFETs 500-950 V MOSFETs WBG semiconductors Discrete IGBTs Emitter controlled diodes 600V and 1200V product families TO-220 Real 2-pin 30 IDW30E60 50 IDW50E60 75 IDW75E60 100 IDW100E60 12 IDP12E120 18 IDP18E120 30 IDB30E120 IDP30E120 XENSIVTM sensors Microcontrollers Gate driver ICs 1200V TO-247 Power ICs TO-263 (D2PAK) Intelligent switches and input ICs 600V Continuous current Ic @TC=100C [A] Packages www.infineon.com/ultrasoftdiodes For more details on the product, click on the part number. 175 Silicon power diodes Nomenclature Silicon power diodes I D Company I = Infineon Device D = Diode Package type P = TO-220 V = TO-220 FullPAK W = TO-247 B = TO-263 (D2PAK) FW = TO-247 Advanced Isolation Nominal current (@ 100C) [A] W 75 E 65 D1 D1 = Rapid 1 D2 = Rapid 2 Nominal voltage Divided by 10 (650 V/10 = 65) Technology E = Std. diode configuration - replacement for FullPAK packagesorTO-247 + mediumperformance insulator C = Common cathode D = Dual anode www.infineon.com/rapiddiodes For more details on the product, click on the part number. 176 Applications 20-300 V MOSFETs 500-950 V MOSFETs WBG semiconductors Discrete IGBTs Power ICs Intelligent switches and input ICs www.infineon.com/ultrasoftdiodes www.infineon.com/gan www.infineon.com/gan-eicedriver XENSIVTM sensors Further information, datasheets and documents www.infineon.com/wbg www.infineon.com/sic www.infineon.com/rapiddiodes Microcontrollers Useful links and helpful information Gate driver ICs Infineon support for wide bandgap semiconductors Packages Simulation For more details on the product, click on the part number. 177 Discrete IGBTs 650 V TRENCHSTOPTM 5 IGBT 1200 V IGBT families Lower power drive IGBT portfolio TRENCHSTOPTM IGBT6 TRENCHSTOPTM advanced isolation Integrated Power Device - IPD protect TRENCHSTOPTM 5 selection tree IGBT selection tree Discrete IGBTs product portfolio IGBT nomenclature For more details on the product, click on the part number. 178 Packages For more details on the product, click on the part number. 179 XENSIVTM sensors Microcontrollers Gate driver ICs Intelligent switches and input ICs Power ICs Discrete IGBTs WBG semiconductors 500-950 V MOSFETs 20-300 V MOSFETs Applications Discrete IGBTs Discrete IGBTs Market leadership through groundbreaking innovation and application focus Resolute to achieve the highest standards in performance and quality, Infineon offers a comprehensive portfolio of application-specific discrete IGBTs. Discrete IGBT overview P-SOT-223-4 SMD SMD, single transistor, small signal TO-252 (DPAK) TO-263 (D2PAK) TO-220 TO-220 FullPAK TO-247 TO-247 4-pin TO247PLUS TO247PLUS 4-pin TRENCHSTOPTM advanced isolation TO-247 Package options Voltage class Configuration Continuous collector current TC = 100C 600V, 650V, 1100V, 1200V, 1350V, 1600V 600 V, 650 V DuoPack (with diode), single IGBTs Duopack IGBTs (with diode) and single diodes 40-90 A 3-120 A New best-in-class technologies and applications Technology TRENCHSTOPTM 5 H5/F5 650V TRENCHSTOPTM 5 L5 650V Rapid diode 650V RC-H5 650V/1200V/1350V RC-E 1200V WR5 650V RC-drives RC-drives fast 600V RC-D2 600 V TRENCHSTOPTM 5 S5 650V TRENCHSTOPTM IGBT6 650 V TRENCHSTOPTM IGBT6 1200 V Application Gate Driver Family EiceDRIVERTM isolated gate driver (1EDC60H12AH) EiceDRIVERTM 650 V SOI gate driver (2ED2184S06F) EiceDRIVERTM low side gate driver (1ED44175N01B) EiceDRIVERTM isolated gate driver (1EDC20I12MH) N/A EiceDRIVERTM isolated gate driver (1EDC20I12MH) EiceDRIVERTM low side gate driver (1ED44175N01B) EiceDRIVERTM isolated gate driver (1EDC20I12MH) EiceDRIVERTM low side gate driver (1ED44175N01B) EiceDRIVERTM low side gate driver (1ED44175N01B) EiceDRIVERTM 650 V SOI gate driver (2ED2184S06F) EiceDRIVERTM 650 V SOI gate driver (6EDL04I06PT) EiceDRIVERTM 650 V SOI gate driver (2ED2184S06F) EiceDRIVERTM 650 V SOI gate driver (6EDL04I06PT) EiceDRIVERTM isolated gate driver (1EDC20I12MH) EiceDRIVERTM 650 V SOI gate driver (2ED2184S06F) EiceDRIVERTM 650 V SOI gate driver (2ED2106S06F) EiceDRIVERTM 650 V SOI gate driver (6EDL04I06PT) EiceDRIVERTM isolated gate driver (1ED020I12-F2) EiceDRIVERTM 1200 V level shift gate driver (6ED2230S12T) www.infineon.com/igbtdiscretes www.infineon.com/gatedriver For more details on the product, click on the part number. 180 20-300 V MOSFETs 650 V TRENCHSTOPTM 5 IGBT WBG semiconductors 500-950 V MOSFETs In terms of switching and conduction losses, there is no other IGBT on the market that can match the performance of the TRENCHSTOPTM 5. Wafer thickness has been reduced by more than 25 percent, which enables a dramatic improvement in both switching and conduction losses, while providing an increased breakthrough voltage of 650V. Based on TRENCHSTOPTM 5 IGBT technology, Infineon has developed six different product families optimized for specific applications, allowing designers to optimize for high efficiency, system cost or reliability demands of the market. The quantum leap of efficiency improvement provided by the TRENCHSTOPTM 5 IGBT families opens up new opportunities for designers to explore. EiceDRIVERTM isolated gate driver like 1ED compact family 650 V IGBT in solar and UPS applications. EiceDRIVERTM low side gate driver with over current protection is widely used in induction cooking application and PFC stage. TRENCHSTOPTM 5 F5 (hard switching) TRENCHSTOPTM 5 H5 (hard switching) TRENCHSTOPTM 5 L5 Applications 650 V TRENCHSTOPTM 5 (hard switching) TRENCHSTOPTM 5 S5 (hard switching) TRENCHSTOPTM 5 WR5 (resonant switching) TRENCHSTOPTM 5 L5 30 40 50 60 70 80 Best-in-class IGBT low VCE(sat) IGBT VCE(sat) IGBT-1.05 V Best trade-off VCE(sat) Vss Ets for frequencies below 20 kHz TRENCHSTOPTM 5 H5/F5 TRENCHSTOPTM 5 R5 Price/performance optimized application specific IGBT TRENCHSTOPTM 5 WR5 100 110 120 130 140 150 kHz Solar, UPS, welding Best-in-class ease-of-use IGBT Elimination of: Collector-emitter snubber capacitor and gate capacitor in low inductance designs (<100 nH) Softer switching than TRENCHSTOPTM 5 H5 Best-in-class high frequency IGBT Bridge to SJMOSFET performance Highest efficiency, especially under light load conditions TRENCHSTOPTM 5 S5 90 Price optimized application specific IGBT for zero current switching (ZCS) Optimized full rated hard switching turn-off typically found in welding Excellent RG controllability Soft recovery plus low reverse recovery charge (Qrr) for diode Ultralow frequency converters Three-level inverter type I NPC 1 and NPC 2 Modified HERIC inverter AC output (aluminum/magnesium welding) UPS, battery charger, solar, welding Medium frequency converters Multilevel inverter stages Output stages PFC Power ICs 20 UPS, solar, welding High frequency converters Multilevel inverter stages Output stages PFC Intelligent switches and input ICs 10 Induction cooking-RC-H5 Half-bridge topologies in induction cooking appliances and other resonant switching applications Air conditioning, welding Medium frequency converters Zero-voltage switching PFC Gate driver ICs 0 Discrete IGBTs RC-H5 (resonant switching) Highest power density in D2PAK footprint Microcontrollers Infineon's ultrathin TRENCHSTOPTM 5 IGBT technology allows higher power density in a smaller chip size. Infineon is the first on the market able to fit a 40 A 650 V IGBT with 40 A diode in D2PAK - 25 percent higher than any other competitors that are offering maximum 30 A DuoPack IGBT in D2PAK. Now it is possible to upgrade the available SMD designs for higher power output Pout. Features and benefits Key benefits The highest power density - 40 A IGBT co-packed with a 40 A diode in D PAK Higher power design with D2PAK package 25 percent higher current than any other competitor Upgrade of the available designs for higher 2 Superior efficiency of leading TRENCHSTOPTM 5 technology XENSIVTM sensors Key features Less paralleling for improved system reliability and less complexity Smaller PCB, more compact system design, lighter Packages www.infineon.com/trenchstop5 www.infineon.com/gatedriver For more details on the product, click on the part number. 181 1200 V discrete IGBTs 1200 V IGBT families The 1200 V TRENCHSTOPTM 2 IGBT is optimized for low conduction losses with the lowest saturation voltage VCE(sat) of 1.75 V. A soft fast recovery emitter controlled diode further minimizes the turn-on losses. The 1200 V HighSpeed 3 discrete IGBTs provides the lowest losses and the highest reliability for switching above 20 kHz. Transition to fast switching high speed devices allows reduction in the size of the active components (25-70 kHz). The new 1200 V IGBT generation, TRENCHSTOPTM IGBT6, is designed to meet requirements of high efficiency, lowest conduction and switching losses in hard switching and resonant topologies, operating at switching frequencies above 15 kHz. The IGBT6 devices can be used as direct replacement for the Highspeed 3 H3 series, without any changes of the design. Such plug-and-play replacement of H3 with new S6 IGBT may benefit up to 0.2 percent efficiency improvement. The RC-H5 family is the latest generation in the RC-H series of reverse conducting IGBT. With a monolithically integrated diode, they offer optimized performance for resonant switching applications such as induction cooking. R5 devices are also available in 1350 V and 1600 V blocking voltage. EiceDRIVERTM isolated gate driver like 1ED Compact family and EiceDRIVERTM 1200 V level shift gate driver family are perfect match for the 1200 V IGBT in motor control, general purpose inverter, solar, and UPS applications. EiceDRIVERTM low side gate driver with over current protection is widely used in induction cooking application. TRENCHSTOPTM RC-E (resonant switching) TRENCHSTOPTM IGBT6 S6, H6 (hard switching) TRENCHSTOPTM 2 (hard switching) HighSpeed 3 H3 (hard switching) TRENCHSTOPTM R3/R5 (resonant switching) 0 5 10 15 20 25 30 35 40 45 50 55 60 kHz World-class TRENCHSTOPTM RC-H products High performance and low losses Induction cooking Resonant switching Medium to high frequency converters Competitive TRENCHSTOPTM RC-E Price versus performance leader Induction cooking Resonant switching Low to medium power cookers Best-in-class 1200V IGBT Motor control, general purpose inverter, solar, UPS Low frequency converters HighSpeed 3 H3 High speed/high power IGBT First tailless/low loss IGBT on market Market proven and recognized quality leader Solar, UPS, welding Medium frequency converters TRENCHSTOPTM IGBT6 New low switching losses and high power IGBTs Optimized for operation at 15 - 40 kHz Best combination of low VCE(sat) of 1.85 V and low switching losses UPS, solar, welding Medium frequency converters RC-H5 RC-E TRENCHSTOPTM 2 Outstanding efficiency Lowest conduction and switching losses Market proven and recognized quality leader www.infineon.com/rch5 www.infineon.com/rc-e www.infineon.com/igbt6-1200v www.infineon.com/gatedriver For more details on the product, click on the part number. 182 20-300 V MOSFETs Lower power drive IGBT portfolio 650 V TRENCSTOPTM IGBT6 and 600 V RC-D2 WBG semiconductors 500-950 V MOSFETs Motor drives up to 1 kW are used in a wide variety of applications from home appliance fans and compressors to pumps. The market for these products demands design flexibility, EMI performance and easy controllability. Therefore, these compact motors require power electronics with the lowest losses and best thermal performance. The TRENCHSTOPTM IGBT6 family of discrete devices has been designed for the lowest switching losses, which is particularly important in systems with higher switching frequencies up to 30 kHz. Additionally, the IGBTs are co-packed with the soft, fast recovery Rapid 1 anti-parallel diodes for the lowest total losses. With a higher blocking voltage at 650 V, and short circuit rating, TRENCHSTOPTM IGBT6 is a key contributor to robust motor designs. Together with EiceDRIVERTM 650 V SOI gate driver 2ED210x and 2ED218x family, Infineon provides the whole solution for motor drives and home appliances. Full load operation and EMI performance TRENCHSTOPTM IGBT6 and RC-D2 High integration and reduced footprint IPM Light load efficiency and ESD immunity CoolMOSTM PFD7 Power ICs Discretes Discrete IGBTs The new RC-D2 family of discrete devices has been cost optimized in surface mounted packages. The device contains a monolithically integrated diode and has HV-H3TRB ruggedness capability. With a blocking voltage at 600 V, and short circuit rating, the RC-D2 is a key contributor to cost-effective motor designs. The RC-H5 family is the latest generation in the RC-H series of reverse conducting IGBT. With a monolithically integrated diode, they offer optimized performance for resonant switching applications such as induction cooking. R5 devices are also available in 1350 V and 1600 V blocking voltage. Design flexibility and customization Intelligent switches and input ICs Example application: refrigerator compressor Key features Key benefits Available in surface mounted packages Enable space limited application IGBT6 co-packed with and without diodes (DPAK) Performance improvement RC-D2 monolithically integrated diode (SOT, DPAK) Cost optimized solution SC rating between 3 s and 5 s SC protection Low EMI due to easy controllability No need for additional components on PCB Gate driver ICs Features and benefits Rg(on)=2200 30 Eon [J] 40 50 Microcontrollers 5.0 4.5 4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0.0 10 Rg(on) and Rg(off) is selected to meet Rg(off)=520 Rg(on)=0 20 30 40 Eon [J] 50 60 dv/dt of 2 V/ns at 500 mA and Tj of 100C IGBTs (IKD04N60RC2) are easily controllable by optimizing Rg values CoolMOSTM (IPS60R1K0PFD7S) EMI performance can be enhanced with additional passive components XENSIVTM sensors dv/dt(on) [V/ns] dv/dt(on) [V/ns] EMI performance 5.0 4.5 4.0 3.5 3.0 2.5 2.0 Rg(on)=404 1.5 1.0 0.5 0.0 10 20 Applications Low power IGBT portfolio Packages www.infineon.com/IGBT6 www.infineon.com/gatedriver For more details on the product, click on the part number. 183 TRENCHSTOPTM advanced isolation TRENCHSTOPTM IGBT6 New generation 1200 V fast speed IGBT The new 1200 V IGBT generation TRENCHSTOPTM IGBT6 is designed to meet requirements of high efficiency, lowest conduction and switching losses in hard switching and resonant topologies operating at switching frequencies above 15 kHz. The TRENCHSTOPTM IGBT 6 is released in two product families - low conduction losses optimized S6 series and improved switching losses H6 series. The TRENCHSTOPTM IGBT6 S6 series features low conduction losses of 1.85 V collector-emitter saturation voltage VCE(sat) combined with low switching losses of the HighSpeed 3 H3 series. TRENCHSTOPTM IGBT6 H6 series is optimized for low switching losses, provides ~15 percent lower total switching losses when compared to predecessor generation H3. Very soft, fast recovery anti-parallel emitter controlled diode is optimized for fast recovery while still maintaining a high level of softness complementing to an excellent EMI behaviour. Positive temperature coefficient allows easy and reliable device paralleling. Very good RG controllability allows adjustment of IGBT switching speed to the requirements of application. EiceDRIVERTM isolated gate driver like 1ED Compact family and EiceDRIVERTM 1200 V level shift gate driver family are perfect match for the 1200 V IGBT6 in motor control, general purpose inverter, solar, and UPS applications. Datasheet specifications @ 175C Switching losses Etot/ICnom [J/A] 300 TRENCHSTOPTM 2 250 CT2 HighSpeed 3 200 CH3 H3 150 CS6 100 Lower VCE(sat) Lower Esw BH6 50 0 10 20 30 40 50 60 70 80 90 100 Forward voltage VCE(sat) [V] Features and benefits Key features Key benefits Easy, plug and play replacement of predecessor HighSpeed 3 H3 IGBT Best combination of switching and conduction losses for switching frequency 15-40 kHz 0.15 percent system efficiency improvement when changing from H3 to S6 in TO-247-3 High RG controllability 0.2 percent system efficiency improvement when changing from H3 to S6 in TO-247 PLUS 4-pin Low conduction losses with 1.85 VCE(sat) for S6 series Low EM Full rated, robust freewheeling diode www.infineon.com/igbt6-1200V www.infineon.com/gatedriver For more details on the product, click on the part number. 184 20-300 V MOSFETs TRENCHSTOPTM advanced isolation Fully isolated TO-247 package with industry leading IGBTs 500-950 V MOSFETs TRENCHSTOPTM advanced isolation solution breaks the limits reached by traditional packaging and isolation techniques. This new isolated package enables the highest power density, the best performance and the lowest cooling effort thanks to an effective and reliable thermal path from the IGBT die to the heatsink. WBG semiconductors In addition to providing 100 percent electrical isolation, TRENCHSTOPTM advanced isolation also eliminates the need for thermal grease or thermal interface sheets. The new package delivers at least 35 percent lower thermal resistivity, helping designers to increase power density, as well as lower system complexity and assembling costs. This new package solution allows industrial and home appliance designs to fully utilize the high performance of TRENCHSTOPTM IGBTs without compromises for isolation and cooling. 2500 VRMS electrical isolation, 50/60 Hz, t = 1 min Up to 35 percent reduction in assembly time reduces manufacturing cost 100 percent tested isolated mounting surface Increased power density Lowest Rth(j-h) Improved reliability from higher yield and no isolation film misalignment Low coupling capacitance, 38 pF Less EMI filter design effort No need for isolation film or thermal interface material Decreased heatsink size Power ICs Key benefits Discrete IGBTs Features and benefits Key features Applications TRENCHSTOPTM advanced isolation Thermal resistivity of package and isolation types TO-247 with isolation film1) Intelligent switches and input ICs TO-247 FullPAK 50% lower Gate driver ICs 35% lower Advanced isolation Rth(j-h) 1) Isolation material: standard polyimide based reinforced carrier Reverse-conducting RS5 No SC rating 0 sec Fast H5 Medium-speed S5 XENSIVTM sensors HighSpeed 3 H3 SC rating 5 sec 0 Microcontrollers insulator film with 152 m thickness, 1.3 W/mK thermal conductivity TRENCHSTOPTM 5 10 15 20 25 30 35 40 45 50 55 60 kHz Packages www.infineon.com/advanced-isolation www.infineon.com/gatedriver For more details on the product, click on the part number. 185 Integrated Power Device Integrated Power Device - IPD protect IEWS20R5135IPB - 20 A 1350 V TRENCHSTOPTM IGBT with integrated protective functions Infineon's IEWS20R5135IPB is a best-in-class IGBT in RC-H5 technology with a unique protective gate driver IC copacked in a TO-247 6-pin package for induction heating applications. IPD protect has, not only the industry's best IGBT performance considering blocking voltage, static losses and conduction losses in induction cooktop applications and other soft switching application, but also integrated protection functions. Its original concept provides protection against overvoltage, overcurrent, and overtemperature and additional features as a unique active clamp control, fault condition notification, and a special two level turn-on gate driving current that reduces significantly the typical high start-up peak current. These integrated protection functions provide a simple and robust solution for increased overall system reliability. Lres Cres AUX Driver and protection IEWS20R5135IPB CBUS Microcontroller VAC RC-IGBT Features and benefits Key features Key benefits Reverse conducting IGBT with monolithic body diode designed for soft switching Increased overall reliability, reducing costs for replacement / rework Integrated Driver with Overvoltage and overcurrent protection Active clamp control circuit Programmable overvoltage threshold Programmable cycle-by-cycle overcurrent threshold Integrated gate drive with 2 level turn-on current Temperature warning Over-temperature protection VCC UVLO Integrated ESD protection and latch immunity on all pins Reduced board complexity and design-in effort Simplified BOM and reduced cost for total solution Best-in-class performance IGBT TO-247 6-pin package www.infineon.com/IPD-Protect For more details on the product, click on the part number. 186 Packages For more details on the product, click on the part number. 187 XENSIVTM sensors Microcontrollers Gate driver ICs Intelligent switches and input ICs Power ICs Discrete IGBTs WBG semiconductors 500-950 V MOSFETs 20-300 V MOSFETs Applications TRENCHSTOPTM 5 selection tree TRENCHSTOPTM 5 selection tree 650 V No Free wheeling diode (FWD) 50 Hz-20 kHz low speed 30 kHz-120 kHz high speed 50 Hz-20 kHz low speed Low VCE(sat) TRENCHSTOPTM 5 (L5) TRENCHSTOPTM 5 (H5/F5/S5) Low VCE(sat) TRENCHSTOPTM 5 (L5) Corresponding best fit IGBT IGW30N65L5 IGP20N65H5/F5 IKW30N65EL5 IGP30N65H5/F5 IKW30N65NL5 IGP40N65H5/F5 IKW75N65EL5 IKZ75N65EL5 IGW30N65H5/F5 IGW40N65H5/F5 IGW50N65H5/F5 IGZ50N65H5 IGZ75N65H5 IGZ100N65H5 IGB15N65S5 IGB20N65S5 IGB50N65S5 IGB50N65H5 www.infineon.com/trenchstop5 www.infineon.com/gatedriver 188 Applications 500-950 V MOSFETs 20-300 V MOSFETs TRENCHSTOPTM 5 selection tree > 20 kHz-60 kHz high speed RC TRENCHSTOPTM 5 (WR5) 10 kHz-40 kHz high speed 30 kHz-100 kHz high speed 60 kHz-120 kHz ultra-high speed Soft" TRENCHSTOPTM 5 (S5) TRENCHSTOPTM 5 (H5) TRENCHSTOPTM 5 (F5) WBG semiconductors Yes IKP08N65H5 IKP08N65F5 IKW40N65ES5 IKP15N65H5 IKP15N65F5 IKW50N65WR5 IKW50N65ES5 IKP20N65H5 IKP20N65F5 IKW75N65ES5 IKP30N65H5 IKP30N65F5 IKP40N65H5 IKP40N65F5 IKA08N65H5 IKA08N65F5 IKA15N65H5 IKA15N65F5 IKW30N65H5 IKW30N65F5 IKW40N65H5 IKW40N65F5 IKW50N65H5 IKW50N65F5 Power ICs IKW30N65ES5 IKW40N65WR5 Intelligent switches and input ICs IKW30N65WR5 Discrete IGBTs Corresponding best fit IGBT IKW50N65EH5 IKW75N65EH5 IKZ50N65EH5 IKZ75N65ES5 IKZ50N65NH5 Gate driver ICs IKZ50N65ES5 IKZ75N65EH5 IKZ75N65NH5 IKB15N65EH5 IKB40N65EH5 Microcontrollers IKB30N65EH5 IKB40N65EF5 XENSIVTM sensors IKB40N65ES5 IKB20N65EH5 Packages IKB30N65ES5 189 Discrete IGBTs selection tree IGBT selection tree IGBT Soft Diode commutation Frequency range 8 kHz - 60 kHz RC series (monolythic) 2 kHz - 30 kHz RC-drives (monolythic) TRENCHSTOPTM performance TRENCHSTOPTM IGBT6 Voltage range 650 V, 1100 V, 1200 V, 1350 V, 1600 V 600 V 600 V, 1200 V 650 V, 1200 V IKpccN60R** IKpccN60RF** IKpccN60T** IKpccN60dTP** IKpccT120...** IKpccN65dT6** Part number IHpccNvvvR3** IHpccNvvvR5** IHpccNvvvE1** IKpccN60RC2*/** IHFW40N65R5S** IEWS20R5135IPB** IGpccN60T** IGpccN60TP** IGpccT120** IGpccN120T2** Applications Induction cooking Conduction loss optimized Microwave Solar inverter Asymmetrical bridge Symmetrical full-bridge Three-level type I or three-level type II converter Multifunction printers Half-bridge resonant (Current resonance < 650 V) Single switch (Voltage resonance > 650 V) Motor control Three-phase inverter Full-bridge inverter Single-phase inverter Uninterruptable power supply UPS bridge Three-level type II converter Major and small home appliances Symmetrical full-bridge Single-phase inverter www.infineon.com/igbtdiscretes www.infineon.com/gatedriver *Coming soon * *For more information on the product, contact our product support 190 IKpccN120dS6** IKpccN120dH6** Applications 20-300 V MOSFETs Discrete IGBTs selection tree 10 kHz - 100 kHz high speed > 18 kHz - 60 kHz high speed 50 Hz - 20 kHz low speed Soft turn-off TRENCHSTOPTM 5 (S5) HighSpeed 3 (H3) TRENCHSTOPTM 5 H5/F5 RC TRENCHSTOPTM 5 (WR5) Low VCE(sat) TRENCHSTOPTM 5 (L5) 650 V 600 V, 1200 V 650 V 650 V 650 V IKpccN65dS5** IKpccN60H3** IKpccN120H3** IKpccN65H5** IKpccN65F5** IKpccN65dR5** IKpccN65dL5** IGpccN60H3** IGpccN120H3** IGpccN65H5** IGpccN65F5** WBG semiconductors > 18 kHz - 60 kHz high speed Discrete IGBTs 10 kHz - 40 kHz medium speed 500-950 V MOSFETs Hard/no diode for IG** parts PFC PFC Energy storage Battery charger Battery charger Welding Welding inverter Full-brigde Half-bridge Two transistor forward Welding UPS Solar inverter Solar Energy storage SMPS UPS Three-level NPC1 and NPC2 topology, inner switches Solar Three-level NPC1 and NPC2 topology, inner switches Microcontrollers UPS Gate driver ICs Intelligent switches and input ICs Power ICs IGpccN65L5** Welding AC output (Al/Mag welding) XENSIVTM sensors Air conditioning HVDC (telecom/data centers) Packages Totem pole PFC 191 Discrete IGBTs product portfolio TRENCHSTOPTM and RC-drives 600 V/650 V product family together with 650 V SOI gate driver family Continuous collector current @ Tc=100C [A] Single IGBT 4 TO-251 (IPAK) TO-252 (DPAK) TO-263 (D2PAK) TO-220 TO-247 advanced isolation TO-220 FullPAK TO-247PLUS/ Super 247 (TO-247AA) IGU04N60T 6 IGD06N60T IGD06N65T6 * 10 IGD10N65T6 * IGB10N60T IGP10N60T 15 IGD15N65T6 * IGB15N60T IGP15N60T IGP06N60T IGB30N60T IGW30N60T IGW30N60TP 40 IGW40N60TP 50 IGB50N60T IGW50N60T IGW50N60TP 30 IGP50N60T IGW75N60T 75 IGBT and diode TO-247 3 IKD03N60RF 4 IKD04N60RF IKD04N60R 6 IKD06N60RF IKD06N60R IKD06N65ET6 * 8 IKD08N65ET6 * 10 15 IKP04N60T IKB06N60T IKP06N60T IKA06N60T IKD10N60RF IKD10N60R IKB10N60T IKP10N60T IKA10N60T IKD15N60RF IKD15N60R IKB15N60T IKP15N60T IKA15N60T IKB20N60T IKP20N60T 20 IKW20N60T 30 IKW30N60T IKW30N60DTP 40 IKW40N60DTP 50 IKFW50N60ET IKW50N60T IKW50N60DTP 75 IKFW75N60ET IKW75N60T 100 IKQ100N60T 120 IKQ120N60T www.infineon.com/600V-1200V-trenchstop *For more information on the product, contact our product support 192 For more details on the product, click on the part number. Applications 20-300 V MOSFETs 500-950 V MOSFETs WBG semiconductors Discrete IGBTs TRENCHSTOPTM IGBT6 650 V product family together with 650 V SOI gate driver family TO-220 FullPAK 8 IKD06N65ET6 * * IGD06N65T6 * * IKD08N65ET6 * * IKA08N65ET6 * 10 IGD10N65T6 * * IKA10N65ET6 * 15 IGD15N65T6 * * IKA15N65ET6 * 6 TRENCHSTOPTM IGBT6 Power ICs TO-252 (DPAK) Intelligent switches and input ICs Continuous collector current @ Tc=100C [A] NEW! 1200 V fast speed IGBT product family together with isolated gate driver family TO-247 15 IKW15N120BH6 40 IKW40N120CS6 TO-247PLUS 3-pin TO-247PLUS 4-pin IKY40N120CS6 IKQ75N120CS6 75 Gate driver ICs DuoPack Continuous collector current @ Tc=100C [A] IKY75N120CS6 TRENCHSTOPTM 1200 V product family together with isolated driver and 1200 V level shift driver family 25 40 50 75 TO-247PLUS 3-pin TRENCHSTOPTM TRENCHSTOPTM 2 IGW08T120 IGW15T120 IGW25T120 IGW40T120 IGW60T120 IKW08T120 IKW15T120 IKW25T120 IKW15N120T2 IKW25N120T2 IKW40T120 IKW40N120T2 Microcontrollers 8 15 25 40 60 8 15 TO-247 TRENCHSTOPTM 2 XENSIVTM sensors DuoPack Single IGBT Continuous collector current @ Tc=100C [A] IKQ40N120CT2 IKQ50N120CT2 IKQ75N120CT2 * Limited by maximum junction temperature. Applicable for TO-220 standard package. * *For more information on the product, contact our product support Packages www.infineon.com/igbt6 For more details on the product, click on the part number. 193 Discrete IGBTs product portfolio Induction cooking series 650 V, 1100 V, 1200 V, 1350 V and 1600 V product families together with isolated driver and low side driver family Continuous collector current @ Tc=100C [A] TO-247 advanced isolation 650V 1100V 1200V 15 1350V 1600V IHW15N120E1 IHW20N65R5 20 IEWS20R5135IPB IHW20N120R5 25 IHW20N135R5 IHW25N120E1 30 40 TO-247 6-pin IPD Protect TO-247 IHW30N65R5 IHFW40N65R5S * 50 IHW30N110R3 IHW40N65R5 IHW30N120R5 IHW30N135R5 IHW40N120R5 IHW40N135R5 IHW30N160R5 IHW50N65R5 HighSpeed 3 Together with isolated driver, 650 V SOI driver, and low side driver family IGBT Continuous collector current @ Tc=100C [A] TO-263 (D2PAK) TO-220 TO-247 advanced isolation TO-220 FullPAK TO-247 20 IGB20N60H3 IGP20N60H3 IGW20N60H3 30 IGB30N60H3 IGP30N60H3 IGW30N60H3 40 IGW40N60H3 50 IGW50N60H3 60 IGW60N60H3 75 IGW75N60H3 100 IGW100N60H3 20 IKB20N60H3 IKP20N60H3 IKW20N60H3 30 IKW30N60H3 DuoPack 40 IKFW40N60DH3E IKW40N60H3 IKFW50N60DH3E IKFW50N60DH3 IKFW60N60DH3E IKFW60N60EH3 50 60 IKW50N60H3 IKW60N60H3 75 IKW75N60H3 90 IKFW90N60EH3 HighSpeed 3 1200 V product family together with isolated driver, and 1200 V level shift driver family TO-247 DuoPack IGBT Continuous collector current @ Tc=100C [A] 15 IGW15N120H3 25 IGW25N120H3 40 IGW40N120H3 15 IKW15N120H3 25 IKW25N120H3 40 IKW40N120H3 TO-247PLUS 3-pin TO-247PLUS 4-pin IKQ40N120CH3 IKY40N120CH3 50 IKQ50N120CH3 IKY50N120CH3 75 IKQ75N120CH3 IKY75N120CH3 www.infineon.com/rch5 www.infineon.com/rc-e www.infineon.com/advanced-isolation *For more information on the product, contact our product support 194 For more details on the product, click on the part number. Applications Discrete IGBTs product portfolio TRENCHSTOPTM 5 F5, H5 and S5 TO-247 advanced isolation 20 IGB20N65S5 IGP20N65F5/IGP20N65H5 30 IGB30N65S5 * IGP30N65F5/IGP30N65H5 40 IGP40N65F5/IGP40N65H5 TO-247 TO-247 4-pin IGW40N65F5/IGW40N65H5 IGB50N60H5 * IGW50N65F5/IGW50N65H5 IGZ50N65H5 IGB50N60S5 * 75 IGW75N65H5 IGZ75N65H5 100 IGZ100N65H5 8 IKA08N65F5/IKA08N65H5 IKA15N65F5/IKA15N65H5 15 IKB15N65EH5 IKP15N65F5/IKP15N65H5 20 IKB20N65EH5 IKP20N65H5/IKP20N65F5 IKB30N65EH5 IKP30N65H5/IKP30N65F5 28 30 IKP28N65ES5 IKP39N65ES5 IKB40N65ES5 40 IKW30N65H5 IKB30N65ES5 39 IKP40N65F5/IKP40N65H5 IKFW40N65DH5 * IKW40N65F5/IKW40N65H5 IKB40N65EH5 IKB40N65EF5 IKFW50N65ES5* IKW50N65F5/IKW50N65H5 IKZ50N65EH5 50 IKFW50N65DH5 IKFW50N65EH5* IKW50N65EH5 60 IKFW60N65ES5 * IKFW75N65ES5 * 75 IKW75N65EH5 IKFW75N65EH5 * 90 IKZ75N65EH5 IKFW90N65ES5 Power ICs DuoPack IKP08N65F5/IKP08N65H5 WBG semiconductors 50 TO-220 FullPAK 500-950 V MOSFETs TO-220 TO-263 (D2PAK) Discrete IGBTs IGBT Continuous collector current @ Tc=100C [A] 20-300 V MOSFETs Together with isolated driver, 650 V SOI driver, and low side driver family TRENCHSTOPTM 5 L5 low VCE(sat) 650 V product family together with low side driver family TO-252 (DPAK) TO-263 (D2PAK) TO-220 TO-262 (IPAK) TO-220 FullPAK TO-247 IGBT 30 lGW30N65L5 * 30 IKW30N65EL5 75 IKW75N65EL5 TO-247 4-pin Intelligent switches and input ICs TO-251 (IPAK) DuoPack Continuous collector current @ Tc=100C [A] IKZ75N75EL5 * TRENCHSTOPTM 5 WR5 TO-247 30 IKW30N65WR5 40 IKW40N65WR5 50 IKW50N65WR5 Microcontrollers DuoPack Continuous collector current @ Tc=100C [A] Gate driver ICs 650 V product family together with low side driver family TRENCHSTOPTM 5 S5 Together with isolated driver, 650 V SOI driver, and low side driver family TO-247 TO-247 4-pin 30 IKW30N65ES5 40 IKW40N65ES5 50 IKW50N65ES5 IKZ50N65ES5 75 IKW75N65ES5 IKZ50N65ES5 XENSIVTM sensors DuoPack Continuous collector current @ Tc=100C [A] *For more information on the product, contact our product support Packages www.infineon.com/trenchstop5 For more details on the product, click on the part number. 195 IGBT nomenclature Nomenclature IGBT (after 03/2013) I K Company I = Infineon S = Formerly Siemens Device G = Single IGBT H = Reverse conducting K = Duo pack Package type A = TO-220-3 FullPAK B = TO-263-3 (D2PAK) D = TO-252-3 (DPAK) P = TO-220-3 U = TO-251-3 (IPAK) W = TO-247-3 Y = TO-247PLUS 4-pin FW = TO-247-3 advanced isolation Q = TO-247PLUS/Super 247 (TO247AA) Z = TO-247-4 Nominal current [A] @ 100C W 75 N 65 E L5 F5 = Ultra fast IGBT H5 = High speed IGBT L5 = Low VCE(sat) IGBT R5 = Reverse conducting IGBT E1 = Reverse conducting IGBT S5 = "Soft" high speed IGBT T6 = TRENCHSTOPTM IGBT6 TP = TRENCHSTOPTM Performance WR5 = RC TRENCHSTOPTM 5 S6 = 1200 V TRENCHSTOPTM IGBT6 H6 = 1200 V TRENCHSTOPTM IGBT6 fast Diode (for duo pack only) B = Emitter controlled half rated C = Emitter controlled full rated D = Rapid 1 half rated E = Rapid 1 full rated N = Rapid 2 full rated W = Full rated hard switching Nominal voltage Divided by 10 (650 V/10 = 65) Technology N = N-channel P = P-channel www.infineon.com/igbtdiscretes For more details on the product, click on the part number. 196 IGBT (before 03/2013) Device K = IGBT + diode (normal drives) H = Optimized for soft switching applications (e.g. induction heating) G = Single IGBT D = Diode Package type A = TO-220 FullPAK B = TO-263 (D2PAK) D = TO-252 (DPAK) P = TO-220 U = TO-251 (IPAK) W = TO-247 N 120 H 3 500-950 V MOSFETs 40 Generation - = Fast IGBT (~20 kHz) H = HighSpeed generation (600 V - 1200 V) T = TRENCHSTOPTM generation (600 V IGBT 3) (1200 V IGBT 4) R = Reverse conducting RF = Reverse conducting fast F = HighSpeed FAST 5 R = Rapid diode generation WBG semiconductors Company I = Infineon S = Formerly Siemens W Nominal voltage Divided by 10 (1200 V/10 = 120) Discrete IGBTs K Technology N = N-channel T = TRENCHSTOPTM E = Emitter-controlled diodes (for diode only) Power ICs I Applications 20-300 V MOSFETs IGBT nomenclature XENSIVTM sensors Microcontrollers Gate driver ICs Intelligent switches and input ICs Nominal current (@ 100C) [A] Packages www.infineon.com/igbtdiscretes For more details on the product, click on the part number. 197 IGBT nomenclature Nomenclature IPD protect I E WS Infineon Product type G = Single IGBT H = Reverse conducting K = DuoPack E = Enhanced IGBT Package W = TO-247 3pin Z = TO-247 4pin WS = TO-247 6pin Nominal current [A] @ 100C 20 R5 - 135 IPB IC/Co-Pack functionality IPB = Induction cooking protection IC version B General format: 1st: I = Induction cooking 2nd : Added funcionality (P = protection) 3rd : version Nominal voltage Divided by 10 (1350 V/10 = 135) Diode (for DuoPack only) Note: not used for RC device = blank Optimization R5: RC 5th generation www.infineon.com/igbtdiscretes For more details on the product, click on the part number. 198 Applications 20-300 V MOSFETs 500-950 V MOSFETs WBG semiconductors Discrete IGBTs Power ICs Intelligent switches and input ICs Infineon support for discrete IGBTs Further information, datasheets and documents www.infineon.com/igbt www.infineon.com/igbtdiscretes Gate driver ICs Useful links and helpful information www.infineon.com/discrete-automotive-igbt www.infineon.com/latest-discrete-packages XENSIVTM sensors Microcontrollers Evaluationboards and simulation models www.infineon.com/eval-TO-247-4pin www.infineon.com/igbtdiscrete-simulationmodels Packages Simulation For more details on the product, click on the part number. 199 Power management ICs XDPTM SMPS controllers DC-DC digital multiphase controllers PFC controllers PWM controllers Resonant LLC half-bridge controller ICs Integrated power stages Switching regulators Voltage regulators Audio amplifier ICs Lighting ICs Intelligent power modules (IPMs) Motor control ICs For more details on the product, click on the part number. 200 Packages For more details on the product, click on the part number. 201 XENSIVTM sensors Microcontrollers Gate driver ICs Intelligent switches and input ICs Power ICs Discrete IGBTs WBG semiconductors 500-950 V MOSFETs 20-300 V MOSFETs Applications XDPTM SMPS controllers XDPTM SMPS IDP2308 and IDP2303A - digital multi-mode PFC+LLC combo controller The IDP2308 and IDP2303A are high performance digital combo controllers with integrated drivers and 600 V depletion cell designed for boost PFC and half-bridge LLC targeting switched mode power supplies (SMPS) from 75 W to 300 W. Support non-AUX operation with the lowest standby performance and start-up cell Support multi-mode PFC operation for optimized efficiency curve Configurable frequency setting for LLC soft-start and normal operation Synchronous PFC and LLC burst mode control with soft-start to prevent acoustic noise Excellent dynamic response by adaptive LLC burst mode Configurable and comprehensive protections for PFC/LLC/IC temp IEC62368-1 certified active X-cap discharge function Flexible IC parameter setting with digital UART interface supports PSU platform approach Key benefits Low BOM count due to high integration of digital control No auxiliary power supply needed Easy design of system schematic and PCB layout Small form factor design Higher system reliability Shorter development cycles and higher design and production flexibility Product Target application Major difference Package IDP2308 TV embedded PSU DSO-14 (with enhanced HV creepage distance) IDP2303A Adapter, general SMPS 2nd redundant PFC output overvoltage protection Constant output voltage DSO-16 IDP2303A - power adapter Vout VAC SR IC GDO CSO VS HSGD HSVCC HSGND GD1 CS1 VCC ZCD HV UART IDP2303A VCC GND HBFB www.infineon.com/xdp-smps For more details on the product, click on the part number. 202 Applications 20-300 V MOSFETs 500-950 V MOSFETs WBG semiconductors Discrete IGBTs Power ICs IDP2308 - embedded PSU Intelligent switches and input ICs Vout_1 VAC Vout_2 HSGD HSVCC HSGND GD1 CS1 ZCD VCC IDP2308 Vbulk HV UART Gate driver ICs VS Power_on/ standby GND HBFB Microcontrollers GDO CSO XENSIVTM sensors Target applications LCD TV power supply General SMPS Power adapter Packages www.infineon.com/xdp-smps For more details on the product, click on the part number. 203 XDPTM SMPS controllers XDPTM SMPS XDPS21071 - digital FFR flyback controller XDPS21071 is the first flyback controller in the industry to introduce ZVS (Zero Voltage Switching) on the primary side to achieve high efficiency with simplified circuitry and economical switches. By driving an external low voltage switch to induce a negative current to discharge the main high voltage MOSFET, switching losses can be reduce further than traditional valley switching type of switching scheme. To achieve high efficiency with synchronous rectification, DCM operation is ensured via valley detection for a safe and robust operation. L F1 LCM Rx 85 ... 264 VAC RCP2 BSC0805LS QSR CCP WP Cx RHV CBUS N RZC1 CVCC CFV DB DCP RCP1 DVCC CZC Cout Type-C CFS WAUX RZC2 60 V, BSL606SN SR + protocol control WZVS U1 VCC ISZ0901NLS Qload WS CY ZCD RG1 GD1 QZVS QM HV RG0 GPIO IPD70R360P7S GD0 XDPS21071 RFC CS CFC RCS U2 MFIO GND CFM RB1 RF1 CC1 RC2 RC1 CC3 RB2 CC2 U3 RF2 Features and benefits Key features Key benefits Zero voltage switching Reduce switching loss and achieve high efficiency Frequency law optimization Optimize efficiency across various line/load condition Active burst mode operation with multi entry/exit threshold Optimize light and no load efficiency Integrated dual MOSFET gate driver Save BOM count and cost with no messy external driver Easy ZVS implementation with an external 60V MOSFET Easy to drive, low cost and widely available off the shelf 60V MOSFET Multiple peak current threshold offset for different output Fail safe mechanism to limit output power in the event of PD controller failure CrCM operation with valley detection Avoid CCM operation and no potential of shoot-through with SR MOSFET REF_XDPS21071_45W1 45W USB-PD Type-C reference design in a small form factor based on XDPS21071. 45W USB-PD Type-C charger Universal input range 90~264 VAC Supported output: 5 V/3 A, 9 V/3 A, 12 V/3 A, 15 V/3 A and 20 V/2.25 A Peak efficiency > 90% Low no-load standby input power < 30 mW Ordering code: REFXDPS2107145W1TOBO1 www.infineon/xdps21071 For more details on the product, click on the part number. 204 20-300 V MOSFETs DC-DC digital multiphase controllers Point-of-load power management WBG semiconductors 500-950 V MOSFETs Infineon's digital multiphase and multirail controllers provide power for today's medium and high current POL applications used in telecom/datacom, server, and storage environments. Infineon's digital controller family enables OEMs and ODMs to improve efficiency and total cost of ownership, while increasing power density and optimizing the total system footprint of the voltage regulator. The products highlighted in the table below represent our fifth generation digital controller family and support up to two rails with 1-6 phases on individual rails. The I2C/PMBusTM interface connects the digital controllers to the application system and provides real time telemetry information, monitoring and control capabilities. The digital controllers are fully configurable through our PowerCodeTM and PowerClientTM graphical user interfaces that allows for easy to use and simplified design optimization. Multi-phase configurations are supported for best power optimization Controller family PMBusTM Phase configuration Main Subconfigurations Dual rail Dual rail PXE1610C * IR35212 Dual/single rail Dual/single rail XDPE10280B * 7 ph 7 ph 8 ph 8 ph Dual rail Dual/single rail Dual/single rail XDPE10281B * IR35204MTRPBF IR35201MTRPBF Dual rail IR35223 * XDPE132G5C * 16 ph 4 ph 8 ph 10 ph 6+1 6+1 8+0, 6+2, 4+4 8+0, 6+2, 4+4 3+1 8+0, 7+1, 6+2 10+0, 5+5 8+8 2.5 V 3.3 V 3.04 V 3.04 V 3.3 V 3.3 V 3.3 V 3.3 V Switching frequency Up to 2 MHz Up to 2 MHz Up to 2 MHz Up to 2 MHz Up to 2 MHz Up to 2 MHz Up to 2 MHz Up to 2 MHz Operating temperature range - 5C to 85C - 40C to 85C - 40C to 85C - 40C to 85C - 40C to 85C - 40C to 85C - 40C to 85C - 40C to 120C VQFN package 48-lead 48-lead (6x6) (6x6) 0.4 mm pitch 0.4 mm pitch 56-lead (7x7) 0.4 mm pitch 56-lead (7x7) 0.4 mm pitch 40-lead (5x5) 0.4 mm pitch 56-lead (7x7) 0.4 mm pitch 48-lead (6x6) 0.4 mm pitch 56-lead (7x7) 0.4 mm pitch Typical application Intel server, high end desktop Intel server, workstation, high end desktop Intel server, workstation, high end desktop AMD server, workstation, high end desktop AMD server, memory and SOC AMD server, CPU Phase redundant based server systems AMD server, GPU, ASIC, networking ASSP Vout_max Discrete IGBTs Part number Power ICs Configurable output rails Intelligent switches and input ICs Feature Applications Digital multiphase controllers XENSIVTM sensors Microcontrollers Gate driver ICs Advantages of a digital controller Protection features include a set of sophisticated overvoltage, undervoltage, overtemperature, and overcurrent protections. Each of the controllers in the table above also detect and protect against an open circuit on the remote sensing inputs. These attributes provide a complete and advanced protection feature set for microprocessor, DSP, FPGA or ASIC power systems. Accurate current sense telemetry is achieved through internal calibration that measures and corrects current sense offset error sources upon start-up. Programmable temperature compensation provides accurate current sense information even when using DCR current sense. *For more information on the product, contact our product support Packages www.infineon.com/digital-controller For more details on the product, click on the part number. 205 Digital multiphase controllers Typical multiphase application circuit 12 V VIN TOUT /FLT SW PWM TDA21472 ISEN1 RCSP RS2 Rseries REFIN LOAD LGND CVCC1 VGD IRTN1 CCS CVDRV1 RCSM 12 V VCC VIN TOUT /FLT PWM2 ISEN2 VINSEN 13K RVIN1_2 1K L2 PGND GATEL LGND CVCC2 VGD IRTN2 10nF ZCD_EN# VRDY1 VRDY2 12V VIN_1 TDA21472 IOUT REFIN RVIN1_1 SW PWM VCC VSEN VRTN BOOST Cboost2 1uF CVIN2 VDRV 3.3 V V_CPU_L1 PGND GATEL VCC IR3584 ZCD_EN# IOUT L1 VDRV PWM1 BOOST Cboost1 CVIN1 CVDRV2 TOUT /FLT SM_ALERT#/ VINSEN2/PSI#1 13K RVIN2_2 1K PWM3 PWM IOUT 10nF REFIN ISEN3 V CPU Serial Bus V 3.3V SV_ALERT# SV_DIO SV_CLK SW TDA21472 L3 PGND GATEL LGND CVCC3 VGD IRTN3 CVIN3 VDRV RVIN2_1 BOOST VIN Cboost3 ZCD_EN# 12V VIN_2 SM_CLK VCC If pin is configured for SM_ALERT V I2C Bus I2C Bus V 12 V SM_DIO CVDRV3 1K VRHOT_ICRIT# 12 V PWM4 BOOST TOUT /FLT SW PWM ISEN4 GATEL LGND CVCC4 VGD IRTN4 L4 PGND VDRV REFIN SV_ADDR TDA21472 VCC IOUT ZCD_EN# V V EN EN_L2/INMODE/ CAT_FLT VIN Cboost4 From System CVIN4 CVDRV4 CFILT 12 V 1uF TOUT /FLT IOUT RS2 Rseries REFIN CCS ISEN1_L2 RCSM_L2 VGD IRTN1_L2 TSEN VSEN_L2 L4 V_CPU_L2 SW TDA21472 PGND LOAD GATEL LGND VDRV PWM VCC PWM1_L2 ZCD_EN# RCSP_L2 BOOST VIN Cboost5 CVIN_L2 CVCC5 CVDRV5 13K 10nF13K VRTN_L2 ADDR_PROT 1K 10nF GND For more details on the product, click on the part number. 206 20-300 V MOSFETs AC-DC power management ICs 500-950 V MOSFETs Technology leadership in power supply WBG semiconductors By offering a wide variety of highly efficient control ICs we enable our customer to meet new demands like PFC regulations and ultra low standby power requirements in a very cost effective way. A comprehensive array of safety features helps to minimize the number of external components, reduces design in time and improves the reliability of the SMPS. AC-DC power management ICs PFC controller Quasi-resonant ICE5QSBG* ICE2QS02G ICE2QS03G Half-bridge LLC resonant ICE1HS01G-1 ICE2HS01G Critical conduction mode (CrCM) PFC TDA4862G TDA4863G TDA4863-2G IRS2505L Combi (PFC+PWM) CrCM + LLC XDPTM SMPS IDP2308 (DSO-14) XDPTM SMPS IDP2303A (DSO-16) Discrete IGBTs Fixed frequency ICE5GSAG (125 kHz) ICE5ASAG (100 kHz) ICE3AS03LJG (100 kHz) ICE3BS03LJG (65 kHz) XDPS21071 (140 kHz) Fixed frequency (FF) CoolSETTM 650 V F3/F3R CoolSETTM ICE3Axx65ELJ ICE3RBRxx65JZ ICE3RBRxx65JG 700 V Gen5 CoolSETTM ICE5AR4770AG ICE5AR4770BZS Power ICs Adjustable frequency ICE2PCS01G (50 - 250 kHz) ICE2PCS05G (20 - 250 kHz) ICE3PCS01G (OVP+brown-out) ICE3PCS02G (OVP) ICE3PCS03G (Brown-out) Stand-alone PWM 800 V F3R CoolSETTM ICE5A/GRxx80AG ICE5ARxx80BZS ICE3A/BRxx80JZ ICE3ARxx80CJZ ICE3ARxx80VJZ ICE3ARxx80JG Intelligent switches and input ICs Fixed frequency ICE2PCS02G (65 kHz) ICE2PCS03G* (100 kHz) PWM controller Quasi-resonant (QR) CoolSETTM Gate driver ICs Continuous conduction mode (CCM) PFC Applications AC-DC power management ICs 650 V CoolSETTM ICE2QRxx65(Z)/(G) 700 V CoolSETTM ICE5QRxx70AZ/G XENSIVTM sensors Microcontrollers 800 V CoolSETTM ICE2QRxx80Z/G ICE5QRxx80AZ/G ICE5QRxx80BG *For more information on the product, contact our product support Packages www.infineon.com/acdc For more details on the product, click on the part number. 207 PFC controllers Continuous conduction mode (CCM) PFC ICs High efficiency and very low system cost Compared to the first generation of ICE1PCS01/02, the second generation of CCM PFC controller ICs, ICE2PCS01/02, have lower internal reference trimmed at 3V. They also have other advantages such as wider VCC operating range, improved internal oscillator and additional direct bulk capacitor overvoltage protection. Compared to the first and second generation of ICE1PCS0x and ICE2PCS0x, the third generation CCM PFC have the lowest internal reference trimmed at 2.5 V and integrated digital control voltage loop. They also feature low peak current limit at 0.2 V, adjustable gate switching frequency range from 21 kHz to 100 kHz and able to synchronize with external frequency range from 50 kHz to 100 kHz. They are now able to achieve 95% efficiency at full load for all input voltage range. Application diagram ICE2PCS0xG ICE3PCS0xG 2nd generation continuous conduction mode PFC IC features 3rd generation continuous conduction mode PFC IC features Fulfills class D requirements of IEC 61000-3-2 Lowest count of external components Adjustable and fixed switching frequencies Frequency range from 20 to 250 kHz Versions with brown-out protection available Wide input range supported Enhanced dynamic response during load jumps Cycle by cycle peak current limiting Integrated protections OVP, OCP DIP-8 and DSO-8 Lead-free, RoHS compliant Fulfills class D requirements of IEC 61000-3-2 Integrated digital voltage loop compensation Boost follower function Bulk voltage monitoring signals, brown-out Multi protections such as double OVP Fast output dynamic response during load jump External synchronization Extra-low peak current limitation threshold SO-8 and SO-14 Lead-free, RoHS compliant PFC CCM IC by feature ICE2PCS01G ICE2PCS05G ICE3PCS03G - Digital control voltage loop Variable frequency ICE2PCS02G ICE2PCS03G * - - Synchronous frequency ICE3PCS02G ICE3PCS01G Open loop protection Low peak current limit -1 V -1 V -0.4 V -0.4 V -0.2 V Brown-out protection - - Overvoltage protection Second overvoltage protection - PFC enable function - Boost follower mode - 5 V regulator - www.infineon.com/acdc *For more information on the product, contact our product support 208 For more details on the product, click on the part number. 20-300 V MOSFETs Critical conduction mode (CrCM) PFC Applications PFC controllers Easy design and lowest system cost 500-950 V MOSFETs Fully compatible with the world standard, these devices are optimized to offer extremely compact and cost effective PFC solutions for electronic ballast and off-line SMPS. By using a zero current detector for discontinuous operation mode a near unity power factor and an excellent THD are achieved. The latest addition are the TDA4863G and TDA4863-2G which are the improved versions of the active power factor controller TDA4862G. Products are available in DSO-8 (TDAxxG parts) and SOT23 (IRS2505L) packages. Discrete IGBTs WBG semiconductors Application diagram TDA4863G/TDA4863-2G Power factor controller (PFC) IC for high-power factor and active harmonic filter IC for sinusoidal line current consumption Power factor approaching 1 Controls boost converter as an active harmonics filter Internal start-up with low current consumption Zero current detector for discontinuous operation mode High current totem pole gate driver Trimmed 1.4% internal reference Undervoltage lockout with hysteresis Very low start-up current consumption Pin compatible with world standard Output overvoltage protection Current sense input with internal low pass filter Totem pole output with active shutdown during UVLO Junction temperature range -40C to +150C Available in DIP-8 and SO-8 packages Power factor controller IC for high-power factor and low THD additional features to TDA4862 Reduced tolerance of signal levels Improved light load behavior Open loop protection Current sense input with leading edge blanking LEB Undervoltage protection SO-8 package Intelligent switches and input ICs TDA4862G Power ICs TDA4862G TDA4863G TDA4863-2G IRS2505LPBF XENSIVTM sensors Microcontrollers Gate driver ICs IRS2505LPBF Crticial conduction mode PFC control High power factor and ultralow THD Wide load and line range Regulated and programmable DC bus voltage No secondary winding required MOSFET cycle-by-cycle overcurrent protection DC bus overvoltage protection Low EMI gate drive Ultralow start-up current 20.8 V internal Zener clamp on VCC Excellent ESD and latch immunity RoHS compliant 5-pin SOT-23 package Packages www.infineon.com/acdc For more details on the product, click on the part number. 209 PFC controllers PFC controller portfolio Critical conduction mode (CrCM) PFC IC portfolio Product VCC min. VCC max. Package TDA4862G 11 V 19 V DSO-8 TDA4863G 10 V 20 V DSO-8 TDA4863-2G 10 V 20 V DSO-8 IRS2505L 9V 20.8 V SOT23 Continuous conduction mode PFC ICs 2nd generation continuous conduction mode PFC IC product portfolio Product Frequency-fSW Current drives Package ICE2PCS01G 50-250 kHz 2.0 A ICE2PCS02G 65 kHz 2.0 A ICE2PCS03G* 100 kHz 2.0 A ICE2PCS05G 20-250 kHz 2.0 A DSO-8 3rd generation continuous conduction mode PFC IC product portfolio Product Frequency-fSW ICE3PCS01G Adjustable Current drives Features Package 0.75 A OVP+brown-out ICE3PCS02G 0.75 A OVP SO-14 SO-8 ICE3PCS03G 0.75 A Brown-out SO-8 www.infineon.com/acdc *For more information on the product, contact our product support 210 For more details on the product, click on the part number. Packages For more details on the product, click on the part number. 211 XENSIVTM sensors Microcontrollers Gate driver ICs Intelligent switches and input ICs Power ICs Discrete IGBTs WBG semiconductors 500-950 V MOSFETs 20-300 V MOSFETs Applications PWM controllers 5th generation fixed frequency PWM IC and CoolSETTM FF CoolSETTM Integrated CoolMOSTM in both 700 V and 800 V MOSFET Cascode configuration for brown-in protection, fast and robust start-up Available in both 100 kHz and 125 kHz fixed switching frequency Frequency reduction in tandem with load reduction to increase efficiency Selectable active burst mode entry/ VCC pin short-to-ground protection Auto restart protection mode to exit profile to optimize standby power and ability to disable Support CCM flyback operation with in-build slope compensation Integrated error amplifier for direct feedback (e.g. non-isolated flyback) Adjustable line input overvoltage protection (only ICE5xRxxxxAG) minimize interruption to operation DSO-8 package (standalone controller), DIP-7 and DSO-12 package for CoolSETTM 5th generation fixed frequency CoolSETTM Output power 1) 85 VAC~300 VAC Ta=50C RDS(on) max 700 V 800 V 15 W 23 W 27 W 40 W 5.18 2.35 1.75 0.80 ICE5GR2280AG ICE5GR1680AG DIP-7 ICE5AR4770BZS DSO-12 ICE5AR4770AG DIP-7 ICE5AR4780BZS DSO-12 ICE5GR4780AG ICE5AR0680BZS ICE5AR0680AG 3rd generation fixed frequency CoolSETTM Output power 1) 85 VAC~300 VAC Ta=50C RDS(on) max 650 V 19~21 W 23~26 W 30~34 W 11.1~5.44 3.42~2.62 1.96~1.71 1.11~1.05 DIP-7 ICE3RBR4765JZ DIP-8 ICE3BR4765J DSO-12 800 V 10~15 W DIP-7 DSO-12 ICE3RBR1765JZ ICE3A1065ELJ ICE3RBR4765JG ICE3BR1765J 0.75~0.71 ICE3RBR0665JZ ICE3A2065ELJ ICE3RBR1765JG ICE3AR1580VJZ 37~41 W ICE3BR0665J ICE3RBR0665JG ICE3AR4780JZ ICE3AR2280JZ ICE3AR4780VJZ ICE3BR2280JZ ICE3AR1080VJZ ICE3AR0680JZ ICE3BR0680JZ ICE3AR4780CJZ ICE3AR2280VJZ ICE3AR0680VJZ ICE3AR10080CJZ ICE3AR2280CJZ ICE3AR4780JG ICE3AR2280JG ICE3AR1080JG www.infineon.com/coolset 1) Calculated DCM maximum output power in an open-frame design based on Ta=50 C and Tj=125C without copper area as heatsink 212 For more details on the product, click on the part number. Applications 20-300 V MOSFETs 500-950 V MOSFETs WBG semiconductors Discrete IGBTs Fixed frequency PWM IC ICE5GSAG 100 kHz 65 kHz -25C~130C Start-up cell Cascode VCC on/off threshold 16 V/10 V 18 V/10.5 V Soft start time 12 ms 10 ms 20 ms Frequency jittering Modulated gate drive (3 level selectable) Slope compensation for CCM - Frequency reduction - Integrated error amplifier for direct feedback - Adjustable line Input overvoltage protection with auto restart - Adjustable brown-in protection with auto restart - (no start-up) - with auto restart with auto restart Active burst mode VCC pin short-to-ground protection VCC undervoltage protection VCC overvoltage protection with auto restart with latch-up Overload /open loop protection with auto restart with auto restart with auto restart and hysteresis with latch-up External blanking time extension - with auto restart External protection enable pin - with latch-up XENSIVTM sensors Overtemperature protection Intelligent switches and input ICs 125 kHz -40C~129C Gate driver ICs 100 kHz ICE3BS03LJG DSO-8 Microcontrollers Switching frequency ICE3AS03LJG DSO-8 Package Operating temperature 3rd generation ICE5ASAG Power ICs 5th generation FF PWM IC Packages www.infineon.com/coolset For more details on the product, click on the part number. 213 PWM controllers Fixed frequency CoolSETTM 700 V CoolSETTM Gen5 ICE5ARxx70AG(BZS) Package Output power range Operating temperature range 650V CoolSETTM Gen3 ICE3Axx65ELJ DIP-7, DSO-12 15 W Gen3R ICE3BRxx65J DIP-8 19 W~34 W -40C~129C DIP-7, DSO-12 15 W~41 W 14 W~39 W -25C~130C 100 kHz -40C~130C Switching frequency 100 kHz Frequency reduction - Integrated error amplifier - Slope compensation for CCM mode - 16 V/10 V 18 V/10.5 V VCC on/off threshold Gen3R ICE3RBRxx65JZ(G) 65 kHz Soft start time 12 ms 20 ms Active burst mode selection 3 level 1 level 65 kHz VCC pin short-to-ground protection No start-up VCC overvoltage protection Auto restart Latch Auto restart Auto restart with hysteresis Latch Auto restart - Latch Auto restart Overtemperature protection External protection enable pin Adjustable brown-in/-out protection Adjustable line input overvoltage protection - Brown-in only - Only ICE5ARxx70AG - - Fast AC reset ICE5AR4770AG ICE5AR4770BZS Product available ICE3A1065ELJ ICE3A2065ELJ ICE3BR4765J ICE3BR1765J ICE3BR0665J ICE3RBR4765JZ ICE3RBR1765JZ ICE3RBR0665JZ ICE3RBR4765JG ICE3RBR1765JG ICE3RBR0665JG www.infineon.com/coolset 1) Calculated 85 VAC~300 VAC DCM maximum output power in an open-frame design based on Ta=50C and Tj=125C without copper area as heatsink 214 For more details on the product, click on the part number. Applications 20-300 V MOSFETs 500-950 V MOSFETs WBG semiconductors Discrete IGBTs Gen3R ICE3ARxx80JG 11 W~23 W Gen5 ICE5ARxx80AG(BZS) DSO-12 DIP-7 DIP-7, DSO-12 DSO-12 14 W~30 W 15 W~39 W 15 W~40 W 15 W~27 W -25C~130C 100 kHz/65 kHz -40C~130C 100 kHz -40C~129C 100 kHz 100 kHz 125 kHz - - - - 17 V/10.5 V 16 V/10 V 10 ms 4 level Gen5 ICE5GRxx80AG 12 ms 3 level 4 level 3 level - Gate driver ICs DIP-7 10 W~40 W Gen3R ICE3ARxx80VJZ Intelligent switches and input ICs Gen3R ICE3ARxx80CJZ Power ICs 800V CoolSETTM Gen3R ICE3A(B)Rxx80JZ No start-up Auto restart Auto restart with hysteresis Auto restart - - - Auto restart - ICE3AR10080JZ ICE3AR4780JZ ICE3AR2280JZ ICE3AR0680JZ ICE3BR2280JZ ICE3BR0680JZ ICE3AR10080CJZ ICE3AR4780CJZ ICE3AR2280CJZ Brown-in only Only ICE5ARxx80AG Auto restart ICE5AR0680AG ICE5AR4780BZS ICE5AR0680BZS ICE5GR4780AG ICE5GR2280AG ICE5GR1680AG Microcontrollers Auto restart - ICE3AR4780JG ICE3AR2280JG ICE3AR1080JG ICE3AR4780VJZ ICE3AR2280VJZ ICE3AR1580VJZ ICE3AR1080VJZ ICE3AR0680VJZ XENSIVTM sensors Latch Packages Auto restart For more details on the product, click on the part number. 215 Climate saver systems Climate saver systems Climate saver 80 PLUS(R) and 80 PLUS(R) Bronze 12 V 5V 3.3 V PFC/PWM 5V 80 PLUS(R) and 80 PLUS(R) Bronze ICE3PCS01G PFC block FF CoolSETTM ICE3PCS02G ICE3PCS03G PWM block ICE2HS01G ICE5GR4780AG Standby block FF CoolSETTM ICE5GR2280AG ICE5GR1680AG ICE3AR1080JG ICE5AR0680AG Climate saver 80 PLUS(R) Silver DC-DC 5V DC-DC 3.3 V 12 V PFC 80 PLUS(R) Silver PFC block PWM block ICE2PCS01G PWM 5V FF CoolSETTM ICE2PCS02G ICE1HS01G-1 ICE5GR4780AG ICE5GR2280AG Standby block FF CoolSETTM ICE5GR1680AG ICE3AR1080JG ICE5AR0680AG www.infineon.com/pcpower www.infineon.com/acdc www.infineon.com/coolset For more details on the product, click on the part number. 216 Climate saver 80 PLUS(R) Gold Applications 20-300 V MOSFETs Climate saver systems Climate saver 80 PLUS(R) Platinum Certification for Infineon's PC power reference design 5V DC-DC 500-950 V MOSFETs DC-DC 3.3 V WBG semiconductors 12 V PWM Discrete IGBTs PFC 5V Power ICs FF CoolSETTM ICE3PCS01G ICE3PCS02G ICE3PCS01G PFC block ICE3PCS03G PWM block ICE2HS01G ICE3PCS03G PWM block ICE5GR4780AG ICE5GR1680AG ICE3AR1080JG ICE5QR2280BG * Standby block QR CoolSETTM ICE5QR1680BG * ICE2QR1080G ICE5QR0680BG * XENSIVTM sensors Microcontrollers ICE5AR0680AG ICE2HS01G ICE5QR4780BG * ICE5GR2280AG Standby block FF CoolSETTM ICE3PCS02G Gate driver ICs PFC block Intelligent switches and input ICs 80 PLUS(R) Platinum Certification for Infineon's PC power reference design 80 PLUS(R) Gold *For more information on the product, contact our product support Packages www.infineon.com/pcpower www.infineon.com/acdc www.infineon.com/coolset For more details on the product, click on the part number. 217 PWM controllers 5th generation quasi-resonant PWM IC and CoolSETTM zero crossing detector QR CoolSETTM Integrated CoolMOSTM in both 700 V Auto restart mode for brown-out Limited charging current during VCC and 800 V MOSFET with cascode configuration Digital frequency reduction with reducing load protection Auto restart mode for VCC under-/ overvoltage protection pin short-to-ground protection Peak power limitation with input voltage compensation and output overload protection Auto restart mode for overtemperature protection with hysteresis Auto restart mode for output overvoltage limitation (no audible noise on power units on/off) DSO package (controller) and DIP-7/DSO-12 (CoolSETTM ) Novel quasi-resonant to minimize the spread of switching frequency between low and high line AC input Selectable active burst mode entry/exit profile Auto restart mode for line overvoltage protection Auto restart mode for open-loop Minimum switching frequency 5th generation quasi-resonant CoolSETTM Output power 1) 85 VAC~300 VAC Ta=50C 800 V 22 W 27 W 32 W 41 W~42 W 1.75 1.25 0.80 5.18 2.35 DIP-7 ICE5QR4770AZ ICE5QR2270AZ DSO-12 ICE5QR4770AG RDS(on) max 700 V 15 W DIP-7 DSO-12 ICE5QR4780AZ ICE5QR2280AZ ICE5QR4780BG * ICE5QR2280BG * ICE5QR1070AZ ICE5QR0680AZ ICE5QR0680AG ICE5QR0680BG * ICE5QR1680AG ICE5QR1680BG * 2nd generation quasi-resonant CoolSETTM Output power 1) 85 VAC~300 VAC Ta=50C RDS(on) max 650 V 20 W~21 W 23 W~26 W 31 W 5.44 ~ 5.18 2.62 1.96 1.11 38 W~42 W 0.75 ~0.71 DIP-7 ICE2QR4765Z ICE2QR1765Z ICE2QR0665Z DIP-8 ICE2QR4765 ICE2QR1765 ICE2QR0665 DSO-12 800 V 14 W~15 W ICE2QR4765G DSO-12 ICE2QR1765G ICE2QR0665G ICE2QR2280Z DIP-7 ICE2QR4780G ICE2QR2280G ICE2QR2280G-1 ICE2QR0680Z ICE2QR1080G www.infineon.com/coolset Calculated maximum output power in an open frame design at Ta=50C, Tj=125C and without copper area as heat sink *For more information on the product, contact our product support 1) 218 For more details on the product, click on the part number. Quasi-resonant PWM IC DSO-8 ICE2QS03G DSO-8 Novel QR with 10 zero crossing counters QR with 7 zero crossing counters QR with 7 zero crossing counters -25C~130C -40C~129C -25C~130C Startup cell Cascode - VCC on/off 16 V/10 V 12 V/11 V 18 V/10.5 V active burst mode in QR switching 2-level selectable burst mode entry/exit level - active burst mode 52 kHz Power saving during standby Digital frequency reduction for high average efficiency OLP blanking time Auto restart timer Maximum input power limitation Fixed Adjustable Fixed Through VCC charging/discharging Setting with external components Through VCC charging/discharging Vin pin voltage dependent Adjustable through ZC resistor Adjustable through ZC resistor VCC undervoltage protection with auto restart with latch with auto restart Adjustable output overvoltage protection with auto restart with latch with latch - - Brown-out feature - Vcc pin short-to-ground protection - - Home appliances, set-top-box, AUX SMPS AUX power supply to VCC eg. LCD TV multi/main, audio main, PDP TV multi/address Self-power supply to VCC eg. smart meter, industrial applications Adjustable line input overvoltage protection Target application 500-950 V MOSFETs Operating temperature ICE2QS02G DSO-8 WBG semiconductors Switching scheme ICE5QSAG and ICE5QSBG Discrete IGBTs Feature Package 650 V and 800 V High voltage start-up cell Power saving during standby VCC on/off threshold (typ.) 800 V 700 V and 800 V Cascode Active burst mode fSW @ 52 kHz 2 level selectable active burst mode quasi-resonant 18 V/10.5 V Adjustable output overvoltage protection Novel QR with 10 zero crossing counters 18 V/9.85 V 16 V/10 V with latch with auto restart VCC over/undervoltage protection with auto restart with auto restart Overload/open loop protection with auto restart with auto restart Overtemperature protection with auto restart (Auto restart with hysteresis) Adjustable line input overvoltage protection - with auto restart Brown-out - with auto restart VCC pin short to ground - (No start-up) DIP-7 DSO-12 DIP-7 DSO-12 Microcontrollers DIP-7 DIP-8 DSO-12 XENSIVTM sensors Package Intelligent switches and input ICs Integrated MOSFET QR with 7 zero crossing counters 5th generation ICE5QRxxxxA/B/Z/G Gate driver ICs Switching scheme 2nd generation ICE2QRxx80G-1 Power ICs Quasi-resonant CoolSETTM 2nd generation ICE2QRxxxxZ/G Applications 20-300 V MOSFETs PWM controllers Packages www.infineon.com/coolset For more details on the product, click on the part number. 219 HB LLC resonant Resonant LLC half-bridge controller IC Best-in-class converters and controllers to support LLC HB resonant mode topology Resonant mode power supplies are a variation over SMPS circuits where the switching losses are significantly reduced by adapting zero-voltage or zero-current switching techniques, also known as soft-switching technique. In non-resonant mode SMPS circuits, the switches are subjected to hard switching. LLC HB resonant operates under the ZVS mode, whereby switching loss is reduced to operate converter at a higher switching frequency. In addition, the converter can be further optimized at a high input voltage. This topology allows to eliminate the secondary filter inductor, adopt better rectifier diodes and reduce secondary conduction loss. The converter utilizes leakage and magnetizing inductance of a transformer. With magnetic integration concept, all the magnetic components can be built in one magnetic core. LLC resonant (no SR) Application diagram - LLC resonant (no SR) ICE1HS01G-1 Novel and simple design (12 components + HB driver) Minimum operating frequency is adjustable externally Burst mode operation for output voltage regulation during no load and/or bus overvoltage Multiple protections in case of fault Input voltage sense for brown-out protection Open loop/overload fault detection by FB pin with auto restart and adjustable blanking/restart time Frequency shift for overcurrent protection Lead-free, RoHS compliant package DSO-8 package Resonant LLC half-bridge controller IC with integrated synchronized rectifier control LLC resonant + SR ICE2HSO1G Novel LLC/SR operation mode and controlled by primary side controller Multiple protections for SR operation Tight tolerance control Accurate setting of switching frequency and dead time Simple system design Optimized system efficiency Multiple converter protections: OTP, OLP, OCP, latch-off enable External disable for either SR switching or HB switching Lead-free, RoHS compliant package DSO-20 package www.infineon.com/acdc For more details on the product, click on the part number. 220 ICE2HS01G DSO-20 up to 600 kHz up to 1 MHz LLC soft start LLC burst mode Adjustable minimum frequency Overload/open loop protection Mains undervoltage protection with hysteresis 2-level 3-level Drive signal for synchronous rectification - Adjustable dead time - External latch-off and OTP - LCD-TV, audio, etc. Server, PC, LCD-TV, etc. Switching frequency range Overcurrent protection Target application Product Frequency-fSW Dead time Applications 500-950 V MOSFETs DSO-8 Current drives WBG semiconductors ICE1HS01G-1 Package LLC resonant (no SR) 30 kHz~600 kHz 380 ns 1.5 A DSO-8 ICE2HS01G Resonant LLC half-bridge controller IC with integrated synchronized rectifier control (LLC resonant + SR) 30 kHz~1 MHz 100~1000 ns 0.3 A DSO-20 XENSIVTM sensors Microcontrollers Gate driver ICs Intelligent switches and input ICs Power ICs ICE1HS01G-1 Discrete IGBTs LLC half-bridge controller IC Package 20-300 V MOSFETs HB LLC resonant * S/R = primary side controlled synchronous rectification Packages www.infineon.com/coolset For more details on the product, click on the part number. 221 DC-DC converters Highest density end-to-end power management solutions As the innovation leader for power semiconductor and energy efficiency technologies, we are continually developing and working on the best solutions for your applications. Our DC-DC converter portfolio includes integrated power stages, switching regulators, integrated POL converters and integrated POL voltage regulators, as well as digital multiphase controllers (see page 205) www.infineon.com/power-stages For more details on the product, click on the part number. 222 OptiMOSTM Powerstage 60 A and 70 A integrated power stages with integrated current and temperature telemetry L O A D LGND VCC PGND 1uF VCC VDRV OCSET GATEL EN CVCC1 CVDRV1 +5V VRDY1 12V VRDY2 CVIN2 VINSEN1 13K R VIN 1_2 NC VIN R VIN 1_1 12V VIN_1 1K TOUT/FLT PWM2 ISEN2 10nF BOOT Cboot2 PHASE Rboot2 L2 SW PWM TDA21472 IOUT VOS CVCC2 SM_DAT . . . . . . SM_CLK SM_ALERT# IR35215 SV_ALERT# SV_DAT SV_CLK CPU Serial Bus 1K 12V CVIN6 Cboot6 NC VIN VCCIO TOUT/FLT TSEN1 PWM6 ISEN6 VR_HOT# CVDRV2 +5V BOOT I2C Bus PGND VCC VDRV EN LGND OCSET GATEL REFIN PHASE Rboot6 L6 SW PWM TDA21472 IOUT VOS PGND VCC VDRV EN VR_EN1 LGND From System OCSET GATEL REFIN VR_EN2 CVCC6 CVDRV6 +5V 12V CVIN1_L2 IINSEN PROG TSEN2 PWM1_L2 TOUT/FLT ISEN1_L2 IOUT BOOT PWR_IN_ALERT# NC VIN Cboot1_L2 PHASE Rboot1_L2 L_L2 SW PWM TDA21472 L O A D VOS PGND VCC VDRV LGND EN CFILT VSEN_L2 OCSET GATEL REFIN CVCC1_L2 CVDRV1_L2 1uF VRTN_L2 +5V GND V_CPU_L2 Package Iout [A] Vin [V] Vout [V] Switching frequency [MHz] TDA21472 5 x 6 x 0.9 mm PQFN 70 4.5 to 15 0.25 to 5.5 1.0 TDA21462 * 5 x 6 x 0.9 mm PQFN 60 4.5 to 15 0.25 to 5.5 1.0 XENSIVTM sensors Part type Packages www.infineon.com/integrated-powerstages *For more information on the product, contact our product support Applications WBG semiconductors Applications High frequency, high current, low profile DC-DC converters Voltage regulators for CPUs, GPUs, ASICs, and DDR memory arrays Discrete IGBTs V_CPU_L1 VOS REFIN Power ICs TDA21472 IOUT Intelligent switches and input ICs L1 SW PWM VRTN1 3.3V PHASE Gate driver ICs PWM1 ISEN1 VSEN1 Cboot1 Rboot1 BOOT NC VIN CVIN1 TOUT/FLT Features Integrated driver, Schottky diode, control MOSFET and synchronous MOSFET 5 mV/A on-chip MOSFET current sensing with temperature compensated reporting Input voltage (Vin) range of 4.5 to 15 V VCC and VDRV supply of 4.5 to 7 V Output voltage range from 0.25 up to 5.5 V Output current capability of 70 A Operation up to 1.0 MHz VCC undervoltage lockout (UVLO) 8 mV/C temperature analog output and thermal flag pull-up to 3.3 V Overtemperature protection (OTP) Cycle-by-cycle self-preservation overcurrent protection (OCP) MOSFET phase fault detection and flag Preliminary overvoltage protection (pre-OVP) Compatible with 3.3 V tri-state PWM input Body-BrakingTM load transient support through PWM tri-state Diode emulation mode (DEM) for improved light load efficiency Efficient dual-sided cooling Small 5.0 x 6.0 x 0.9 mm PQFN package Microcontrollers 12V 500-950 V MOSFETs Infineon's integrated OptiMOSTM Powerstage family contains a synchronous buck gate driver IC which is co-packed with control and synchronous MOSFETs and a Schottky diode to further improve efficiency. The package is optimized for PCB layout, heat transfer, driver/MOSFET control timing and minimal switch node ringing when layout guidelines are followed. The paired gate driver and MOSFET combination enables higher efficiency at lower output voltages required by cutting edge CPU, GPU, ASIC and DDR memory designs. The TDA21472 integrated power stages internal MOSFET current sense algorithm, with integrated temperature compensation, achieves superior current sense accuracy versus best-in-class controller based inductor DCR sense methods. Up to 1.0 MHz switching frequency enables high performance transient response, allowing miniaturization of output inductors, as well as input and output capacitors, while maintaining industry-leading efficiency. The TDA21472 is optimized for CPU core power delivery in server applications. The ability to meet the stringent requirements of the server market also makes the TDA21472 ideally suited for powering GPU, ASIC, DDR memory, and other high current designs. 20-300 V MOSFETs Integrated power stages For more details on the product, click on the part number. 223 Integrated power stages OptiMOSTM Powerstage 70 A power stage with exposed top for improved thermal performance Infineon's TDA21475 exposed-top power stage contains a low quiescent-current synchronous buck gate driver IC co-packaged with high-side and low-side MOSFETs. The package is optimized for PCB layout, heat transfer, driver/MOSFET control timing, and minimal switch node ringing when layout guidelines are followed. The gate driver and MOSFET combination enables higher efficiency at the lower output voltages required by cutting edge CPU, GPU and DDR memory designs. The TDA21475 internal MOSFET current sense algorithm with temperature compensation achieves superior current sense accuracy versus best-in-class controller-based inductor DCR sense methods. Protection includes cycleby-cycle over current protection with programmable threshold, VCC/VDRV UVLO protection, bootstrap capacitor undervoltage protection, phase fault detection, IC temperature reporting and thermal shutdown. The TDA21475 also features auto replenishment of the bootstrap capacitor to prevent overdischarge. The TDA21475 features a deep-sleep power saving mode, which greatly reduces the power consumption when the multiphase system enters PS3/PS4 mode. Operation at switching frequency as high as 1.5 MHz enables high performance transient response, allowing reduction of output inductance and output capacitance while maintaining industry-leading efficiency. The TDA21475 is optimized for CPU core power delivery in server applications. The ability to meet the stringent requirements of the server market also makes the TDA21475 ideally suited for powering GPU and DDR memory designs. 12V TOUT/FLT PWM1 ISEN1 VSEN1 PHASE L1 V_CPU_L1 SW PWM TDA21475 IOUT VRTN1 L O A D VOS LGND VCC PGND 1uF VCC VDRV OCSET GATEL REFIN EN 3.3V BOOT NC VIN CVIN1 Cboot1 Rboot1 CVCC1 CVDRV1 +5V VRDY1 12V VRDY2 CVIN2 VINSEN1 13K R VIN 1_2 NC VIN R VIN 1_1 12V VIN_1 1K TOUT/FLT PWM2 ISEN2 10nF BOOT Cboot2 PHASE Rboot2 L2 SW PWM TDA21475 IOUT VOS CVCC2 SM_DAT . . . . . . SM_CLK SM_ALERT# IR35215 CPU Serial Bus 1K SV_ALERT# SV_DAT SV_CLK 12V CVIN6 Cboot6 NC VIN VCCIO TOUT/FLT TSEN1 PWM6 ISEN6 VR_HOT# CVDRV2 +5V BOOT I2C Bus PGND VCC VDRV EN LGND OCSET GATEL REFIN PHASE Rboot6 L6 SW PWM TDA21475 IOUT VOS PGND VCC VDRV EN VR_EN1 LGND From System OCSET GATEL REFIN VR_EN2 CVCC6 CVDRV6 +5V 12V CVIN1_L2 IINSEN PWR_IN_ALERT# PROG TSEN2 PWM1_L2 TOUT/FLT ISEN1_L2 IOUT BOOT NC VIN Cboot1_L2 PHASE Rboot1_L2 L_L2 SW PWM TDA21475 L O A D VOS PGND VCC VDRV LGND EN CFILT VSEN_L2 OCSET GATEL REFIN CVCC1_L2 CVDRV1_L2 1uF VRTN_L2 +5V GND V_CPU_L2 Features Co-packaged driver, high-side and low-side MOSFETs 5 mV/A on-chip MOSFET current sensing with temperature compensated reporting Input voltage (VIN) range of 4.25 to 16 V VCC and VDRV supply of 4.25 to 5.5 V Output voltage range from 0.25 up to 5.5 V output current capability of 70 A operation up to 1.5 MHz VCC/VDRV undervoltage lockout (UVLO) Bootstrap capacitor undervoltage protection 8 mV/C temperature analog output Thermal shutdown and fault flag Cycle-by-cycle over current protection with programmable threshold and fault flag MOSFET phase fault detection and flag Auto replenishment of bootstrap capacitor Deep-sleep mode for power saving Compatible with 3.3 V tri-state PWM input Body-BrakingTM load transient support Small 5 x 6 x 0.65 mm PQFN package Lead-free RoHS compliant package Integrated driver, Schottky diode, control MOSFET and synchronous MOSFET Applications High frequency, high current, low profile DC-DC converters Voltage regulators for CPUs, GPUs, ASICs, and DDR memory arrays Part type TDA21475 * Package 5 x 6 x 0.9 mm PQFN Iout [A] Vin [V] Vout [V] 70 4.25 to 16 0.25 to 5.5 Switching frequency [MHz] 1.5 www.infineon.com/integrated-powerstages *For more information on the product, contact our product support 224 For more details on the product, click on the part number. 20-300 V MOSFETs OptiMOSTM Powerstage 20 A power stage with integrated current sense IOUT SW IR35411 EN OCSET GATEL LGND VDRV VCC VOS L O A D PGND REFIN VCC 3.3V +5V 1uF CVDRV1 . . . VRDY1 12V CVIN3 VRDY2 Cboost3 VIN BOOST R VIN 1_1 VINSEN1 12V VIN_1 13K R VIN 1_2 1K TOUT/FLT PHASE IR35411 IOUT REFIN PGND VDRV VCC GATEL EN OCSET VOS L3 SW PWM PWM3 ISEN3 10nF Rboost3 LGND SM_DAT SM_CLK I2C Bus +5V TSEN1 CVDRV3 SM_ALERT 10nF IR352XX VCCIO SV_ALERT# SV_DIO SV_CLK CPU Serial Bus 1K VRHOT_ICRIT# VR_EN1 From System VR_EN2 h 1K ADDR_PROT PROG / 12V CVIN1_L2 VIN TSEN2 1K 1K 10nF PWM1_L2 TOUT/FLT PWM ISEN1_L2 IOUT BOOST Cboost1_L2 Rboost1_L2 L1_L2 PGND CSIN+ CSIN- EN CFILT PHASE SW IR35401 REFIN VCC 13K r V_CPU_L2 L O A D LGND +5V 1uF CVDRV1_L2 VSEN2 VRTN2 GND Applications General purpose POL DC-DC converters Voltage regulators for CPUs, GPUs, ASICs, and DDR memory arrays Part type IR35401 * Package 4 x 5 x 0.9 mm PQFN Iout [A] Vin [V] Vout [V] 20 4.25 to 16 0.5 to 5.5 WBG semiconductors Switching frequency [MHz] 1.5 Packages www.infineon.com/integrated-powerstages *For more information on the product, contact our product support Discrete IGBTs Features Integrated driver, control MOSFET and synchronous MOSFET Integrated bootstrap synchronous PFET Inductor DCR current sensing with temperature compensation Input voltage (VIN) range from 4.25 to 16 V VCC supply of 4.25 to 5.5 V Output voltage range from 0.5 to 3 V or up to 5.5 V if the internal current sense amplifier is not used Local lossless inductor current sensing with improved noise immunity and accuracy Single reference based current reporting output Output current capability of 20 A Operation up to 1.5 MHz VCC undervoltage lockout Over-temperature and VCC UVLO fault communication to controller via TOUT pin Compatible with 3.3 V tri-state PWM Input Body-BrakingTM load transient support through PWM tri-state Auto-replenishment on BOOST pin Low operating quiescent current and <100 A when disabled Small 4 x 5 x 0.9 mm PQFN package Lead-free RoHS compliant package Power ICs ISEN1 V_CPU_L1 Intelligent switches and input ICs PWM1 VRTN1 L1 Gate driver ICs VSEN1 PWM Microcontrollers VIN BOOST TOUT/FLT Rboost1 XENSIVTM sensors 12V CVIN1 Cboost1 500-950 V MOSFETs Infineon's IR35401 integrated power stage contains a synchronous buck gate driver IC, which is co-packaged with control and synchronous MOSFETs and Schottky diode to further improve efficiency. The package is optimized for PCB layout, heat transfer, driver/MOSFET control timing, and minimal switch node ringing when layout guidelines are followed. The paired gatedriver and MOSFET combination enables higher efficiency at lower output voltages required by cutting edge CPU, GPU and DDR memory designs. The IR35401 power stage features an integrated current sense amplifier to achieve superior current-sense accuracy against best-in-class controller-based inductor DCR sense methods while delivering the clean and accurate current report information. The protection features inside IR35401 include VCC UVLO and thermal flag. IR35401 also features an auto replenishment of bootstrap capacitor to prevent the bootstrap capacitor from overdischarging. The IR35401 supports deep-sleep mode and consumes <100 A VCC bias current when the EN pin is pulled low. Up to 1.5 MHz switching frequency enables high performance transient response, allowing miniaturization of output inductors, as well as input and output capacitors while maintaining industry-leading efficiency. When combined with Infineon's digital controllers, the IR35401 incorporates the Body-BrakingTM feature through PWM tri-state which enables reduction of output capacitors. The IR35401 is optimized for low current CPU rails in server applications. The ability to meet the stringent requirements of the server market also makes the IR35401 ideally suited for powering GPU and DDR memory rails. PHASE Applications Integrated power stages For more details on the product, click on the part number. 225 Integrated power stages OptiMOSTM Powerstage 25 A, 35 A, 40 A integrated power stages with highest efficiency on smallest form factor Infineon's TDA21240 powerstage is a multichip module that incorporates Infineon's premier MOSFET technology for a single high-side and a single low-side MOSFET coupled with a robust, high performance, high switching frequency gate driver in a single PG-IQFN-30-2 package. The optimized gate timing allows for significant light load efficiency improvements over discrete solutions. When combined with Infineon's family of digital multi-phase controllers, the TDA21240 forms a complete core voltage regulator solution for advanced micro and graphics processors as well as point-of-load applications. PXE1210J Features For synchronous buck converter step down voltage applications Maximum average current of 40 A Input voltage range +4.5 V to +16 V Power MOSFETs rated 25 V Fast switching technology for improved performance at high switching frequencies (> 500 kHz) Integrated Power Stage Integrated Power Stage Remote driver disable function Includes bootstrap diode Undervoltage lockout Shoot through protection +5 V high side and low side MOSFETs Integrated Power Stage Applications Desktop and server VR buck converter Single-phase and multiphase POL CPU/GPU regulation in notebook, desktop graphics cards, driving voltage Compatible to standard +3.3 V PWM controller integrated circuits Tri-state PWM input functionality Small package: PG-IQFN-30-2 (4 x 4 x 1 mm) RoHS compliant Thermal warning DDR memory, graphic memory High power density voltage regulator modules (VRM) Qualified for DC-DC industrial applications based on JEDEC (JESD47, JESD22, J-STD20) General purpose POL DC-DC converters Part type Package Iout [A] Vin [V] Switching frequency [MHz] TDA21242 4 x 4 x 1 mm PQFN 25 4.5 to 16 1.0 TDA21241 TDA21240 4 x 4 x 1 mm PQFN 4 x 4 x 1 mm PQFN 35 40 4.5 to 16 4.5 to 16 1.0 1.0 www.infineon.com/integrated-powerstages For more details on the product, click on the part number. 226 20-300 V MOSFETs DC-DC converters Robust range of controllers and regulators for the widest application spectrum 45 V 8 5 BDS Feed forward Buck converter 6 Oscillator 4 Bandgap reference IFX91041 IFX90121 5V >1 A IFX91041 Adj., 5 V, 3.3 V 2 A IFX81481 Adj. IFX80471 Adj., 5 V 500 mA 1.8 A 10 A 2.3 A 2.2 MHz 370 kHz Synchronous controller 60 V, 360 kHz BUO FB Soft-start ramp generator Power ICs 3 Output current 1 A Charge pump Overtemperature shutdown 2 GND Intelligent switches and input ICs 1 > 45 V ... 60 V Output current Enable SYNC Maximum input voltage Discrete IGBTs VS WBG semiconductors Industrial DC-DC buck regulators (selection tree) EN 7 COMP 500-950 V MOSFETs Our high-efficiency switching regulators and controllers help to reduce energy consumption. In addition to extending the operating time of battery powered systems, they also significantly improve the thermal budget of the application. Overall, this translates into minimal operating costs. For your design flexibility, they are available as adjustable voltage variants as well as with dedicated fixed output voltage values. IFX91041 block diagram Applications Switching regulators Features and benefits Key features Key benefits Input voltage up to 60 V High-efficiency regulation Output currents going from 500 mA up to 10 A Only a few external components needed for stable regulation Switching frequencies ranging from 100 kHz to 2.2 MHz Perfectly suited for regulation in pre-/post-regulation power supply architectures Gate driver ICs Shutdown quiescent current down to below 2 A Current limitation and overtemperature protection Enable feature VQ (multiple) Output current type Output current [A] Product features Package IFX81481ELV Adjustable Buck controller 10.0 10 A synchronous DC-DC adjustable step down controller; f = 100 kHz-700 kHz, N PG-SSOP-14 PG-SSOP-14 IFX90121EL V50 5.0V Buck converter 0.5 Vin up to 45 V, 2.2 MHz step-down regulator with low quiescewnt current IFX80471SK V Adjustable Buck controller 2.3 Vin up to 60V; VQ adjustable from 1.25 V up to 15 V; external MOSFET PG-DSO-14 IFX80471SK V50 5.0V Buck controller 2.3 Vin up to 60V; external MOSFET PG-DSO-14 IFX91041EJV Adjustable Buck converter 1.8 VQ adjustable from 0.6 V up to 16 V; tolerance 2% up to 1000 mA PG-DSO-8 IFX91041EJ V33 3.3 V Buck converter 1.8 VQ fixed to 3.3 V; tolerance 2% up to 1000 mA PG-DSO-8 IFX91041EJ V50 5.0V Buck converter 1.8 VQ fixed to 5.0V; tolerance 2% up to 1000 mA PG-DSO-8 XENSIVTM sensors Part number Microcontrollers DC-DC converters Packages www.infineon.com/industrial-dcdc-converters For more details on the product, click on the part number. 227 Switching regulators Integrated POL voltage regulators Highest density high efficiency integrated POL (IPOL) for smart enterprise systems Infineon's integrated POL switching converters deliver benchmark efficiency and dramatically reduce system size. Solutions up to 35 A are available in compact PQFN packages. Target applications include server, storage, routers and switches, telecom base stations, digital home media, mobile computing and embedded data processing. Solutions with and without PMBus digital communication are available in single output and multi-rail format. Point-of-load products - how to choose DC-DC products 1 to 35 A PMBusTM digital IPOL Constant on-time IPOL IPOL with digital interface Easy/light-load efficiency IR3883MTRPBF (3 A), IR3888MTRPBF (25 A), IR3889MTRPBF (30 A), IR3887MTRPBF * (30 A) Telemetry Margining Intel SVID Support Parallel VID IR3806x: 6-35 A with PMBusTM IR3816x: 15 A, 30 A with PMBusTM and Intel SVID IR38263: 30 A with PVID and PMBusTM 4.3 V < Vin< 14V En/FCCM Vin PVin Boot Vcc SW Vin IR3883MTRPBF PGood Differential remote sense for optimum output accuracy PGood PGND (optional) VIN Boot Vo Fb PGOOD SCL SDA SAlert Power good PVIN SW VO Gnd PGnd OCset RS+ RS- 4.3 V < Vin< 17V Digital mode: I2C/PMBusTM interface Enable Enable PMBusTM IC capabilities Vin PVin Boot Vcc/LDO Phase Vo Inventory Device ID SW IR3887MTRPBF* PGood PGood Configuration On/off configuration fault/warnings GATEL SS/Latch Fb Ton/Mode Control Sequencing delay/ramp fault response Telemetry Vout, Iout, power temperature, peak values Status Comms, data, temps VSENM ILIM AGnd PGnd Ready-to-go reference designs and the on-line PowerDesk simulator simplify the task of designing regulated voltage rails. Different control topologies are available to meet an application's specific requirements. www.infineon.com/ipol www.infineon.com/analog-ipol *Coming soon 228 For more details on the product, click on the part number. 20-300 V MOSFETs Integrated point-of-load converters IR3806x series (6 A /15 A / 25 A / 35 A) Applications Switching regulators 500-950 V MOSFETs Digital interface IPOL voltage regulators The digital interface IPOL devices are easy-to-use, fully integrated and highly efficient DC-DC regulator offering I2C/PMBusTM, parallel VID, Intel SVID. The on-board PWM controller and MOSFETs make the family a space-efficient solution, providing accurate power delivery for low output voltage and high current applications. WBG semiconductors The IR3806x family of PMBusTM enabled IR MOSFETTM IPOL based IR MOSFET IPOL voltage regulators offers: Compactness of integrated controller, driver and MOSFETs High performance analog voltage mode engine Flexibility of a rich PMBusTM interface Discrete IGBTs The IR381(2/3)6x family features OptiMOSTM 5 for the highest efficiency and adds Intel SVID support (IR381(/3)6x) for Intel based systems or parallel VID (IR3826x) for voltage scaling or 8 programmable output voltages booting options to avoid programming at start up. Pin compatible options with and without PMBusTM are available to allow the flexibility of using PMBusTM only during evaluation or easily upgrade a system to PMBusTM without re-layout. Key features Key benefits PMBusTM revision 1.2 compliant Only single chip solution with extensive PMBusTM, parallel VID, Intel SVID support allows 50 percent space saving versus external power competition 66 PMBusTM commands Power ICs Features and benefits Intel SVID support for Intel-based systems Wide input voltage range and single 5 V - 16 V input operations Intelligent switches and input ICs Parallel VID or PMBusTM for voltage setting and margining Differential remote sense Telemetry status via digital bus Ultralow jitter voltage mode eingine Remote monitoring and update Operation temp: -40 to 125 C Parameter changes by register Flexible sequencing High accuracy low ripple Gate driver ICs Integrated sequencing, margin, current and voltage monitoring Digital interface IPOL Max. Vin Max. fsw Distinctive features IR38064MTRPBF 35 5x7 21 V 1500 KHz IR38063M 25 5x7 21 V 1500 KHz IR38062M 15 5x7 21 V 1500 KHz IR38060M 6 5x6 16 V 1500 KHz IR38163M 30 5x7 16 V 1500 KHz OptiMOSTM 5, SVID + PMBusTM IR38165M 30 5x7 16 V 1500 KHz OptiMOSTM 5, SVID IR38363M 15 5x7 16 V 1500 KHz OptiMOSTM 5, SVID + PMBusTM IR38365M 15 5x7 16 V 1500 KHz OptiMOSTM 5, SVID IR38263M 30 5x7 16 V 1500 KHz OptiMOSTM 5, PVID + PMBusTM IR38265M 30 5x7 16 V 1500 KHz OptiMOSTM 5, PVID IR38164M 30 5x7 16 V 1500 KHz OptiMOSTM 5, SVID + PMBusTM, enhanced Imon IRPS5401M 4+4+2+2+0.5 7x7 14 V 1500 KHz 5 output PMIC, PMBusTM Microcontrollers Package size [mm] Max. current [A] PMBusTM XENSIVTM sensors Part number Packages www.infineon.com/ipol For more details on the product, click on the part number. 229 Switching regulators OptiMOSTM IPOL voltage regulators with COT Easy to use with no external compensation and smallest BOM OptiMOSTM IR3883MTRPBF, IR3887MTRPBF *, IR3889MTRPBF, and IR3888MTRPBF integrated point-of-load DC-DC devices are easy-to-use, fully integrated and highly efficient DC-DC regulators that operate from a wide input voltage range and provide up to 30 A continuous current. The devices increase efficiency and power density and simplify design for POL applications in server, enterprise storage, netcom router and switches, datacom and telecom base stations. Block diagram IR3883M Block diagram IR3887M (30 A) 4.3 V < Vin< 14V 4.3 V < Vin< 17V Enable En/FCCM Vin PVin Vin PVin Enable Boot Boot Vcc/LDO Vcc Phase Vo SW SW IR3883MTRPBF PGood IR3887MTRPBF* PGood PGood PGood PGND Gnd PGnd GATEL SS/Latch (optional) Vo Ton/Mode Fb ILIM Fb VSENM AGnd OCset PGnd Main benefits Main benefits Enhanced Voltage Mode PWM devices offer high accuracy, ultralow ripple and noise, and higher control bandwidth for less capacitors. Scalable solution from 3A up to 35A. For designs requiring high density, low cost and easy design, the family includes a 3A device with Enhanced Stability Constant-on-Time (CoT) engine that does not require external compensation enabling easy designs and fast time to market. Quiescent current down to 5 A Overload, overtemperature, short circuit and reverse-polarity protection Low current consumption Extended temperature range -40C ... +125C Analog interface IPOL Part number Max. current [A] Package size [mm] Max. Vin Max. fsw IR3883MTRPBF 3 3x3 14 V 800 KHz IR3888MTRPBF 25 5x6 17 V 2000 KHz IR3887MTRPBF * 30 4x5 17 V 2000 KHz IR3889MTRPBF 30 5x6 17 V 2000 KHz Distinctive features Constant-on-time (COT) www.infineon.com/ipol *Coming soon 230 For more details on the product, click on the part number. 20-300 V MOSFETs Voltage regulators Energy-efficient voltage regulators and trackers 500-950 V MOSFETs Our linear voltage regulators and trackers help to reduce energy consumption, extending operating time and minimizing operating costs across all kinds of systems. The wide supply voltage range, low quiescent current, rich protective feature set and choice of packages make our devices the perfect fit across a broad application spectrum, apart from automation systems as well for heath care, traffic, power tools, lighting and many other multi-market systems. Our trackers are ideal as additional supplies for off-board loads to increase system reliability Maximum input voltage WBG semiconductors Industrial linear voltage regulator (selection tree) 20 V > 20 V ... 60 V Output current Output current 500 mA >500 mA <500 mA 2 IFX54441EJ V Adj., 3.3 V, 5 V IFX1117 Adj., 3.3 V IFX20001 3.3 V, 5 V 500 mA 3 IFX54211 3.3 V 300 mA 800 mA 30 mA 150 mA EN, rev. pol, 2% 2% accuracy EN, rev. pol, 4% EN IFX1963 Adj. IFX20002 3.3 V, 5 V 3 Applications Voltage regulators IFX27001 Adj., 3.3 V, 5 V 1000 mA 40 V, 3% 2 500 mA 1500 mA 30 mA EN, rev. pol, 2.5% EN, rev. pol, 1.5% EN, rev. pol, 4% IFX21401 3 IFX24401 5V 7 Discrete IGBTs IFX1763 Adj., 3.3 V, 5 V 300 mA EN, 2% 4 50 mA 0.5% Power ICs IFX25001 3.3 V, 5 V IFX4949 100 mA 400 mA RST, 1% 45 V, rev. pol, 4% Output current 1 Low quiescent current 2 Low noise behavior 3 Small package 4 Tracker! High accuracy 5 Ultra low quiescent current 7 Very low dropout IFX25401 Adj., 5 V IFX2931 5V 400 mA 100 mA Intelligent switches and input ICs EN, rev. pol, 2% 5 IFX30081 Adj., 3.3 V 50 mA Key features Key benefits Input voltage up to 60 V Pin-to-pin compatibility with industry-standard parts Output current up to 1.5 A Very low dropout voltageTrackers for optimized heat distribution and external protection Output voltage adjustable or fixed to specific values Gate driver ICs Features and benefits Trackers for maximum system cost reduction Quiescent current down to 5 A Overload, overtemperature, short circuit and reverse-polarity protection Small robust packages Microcontrollers Low current consumption Extended temperature range -40C ... +125C Microcontroller family Input voltage [V] Input current (max.) [mA] Voltage regulator XMC1000 family 1.8 to 5.5 <100 IFX54211/IFX2931/IFX4949/IFX25001/IFX544xx */ IFX30081 XMC4000 family 3.3 <500/300 IFX1763/IFX544xx */IFX1117/IFX30081 XC8xx 3.3 to 5.0 200 IFX20001/IFX30081/IFX21401/IFX4949/IFX544xx * XE166/XC2000 1.5 and 3.3 or 5.0 100 IFX25401/IFX24401/IFX2931/IFX4949/IFX1763/IFX54441 TriCoreTM 1.5 to 3.3 >400 IFX27001/IFX91041/IFX80471/IFX25001/IFX1117 XENSIVTM sensors Infineon's microcontroller families and industrial voltage regulators * For more information on the product, contact our product support Packages www.infineon.com/industrial-voltage-regulators For more details on the product, click on the part number. 231 Audio amplifier ICs Integrated class D audio amplifier ICs Cooler, smaller and lighter class D audio amplifiers for great sounding products No heatsink IRS209X (1 ch) + CoolGaNTM 400 V e-mode HEMTs IRS2092 (1 ch) + MOSFETs w/gate buffer IRS2052 (2 ch) + MOSFETs Analog input ICs + MOSFETs/e-mode GaN Infineon's MERUSTM audio solutions enable audio designers to improve the performance of their products, while increasing efficiency and reducing solution size. Advances in semiconductor processes in combination with new innovative architectures are behind a portfolio of class D technologies that allow professional, commercial/home and portable audio applications to benefit from unparalleled performance, power density and reliability. The broad portfolio covers power ranges from 20W to 2kW per channel from the smallest single-chip devices and multi-chip module (MCMs) to highly scalable discrete audio amplifier solutions consisting of powerful MOSFET/CoolGaNTM enhancement mode (e-mode) HEMT and driver ICs combinations. IRS2093 (4 ch) + MOSFETs IR43x1 (1 ch) Integrated ICs IR43x2 (2 ch) MA12040 (1- 4 ch) Digital input MA12070 (1- 4 ch) MA12040P (1- 4 ch) MA12070P (1- 4 ch) 20 100 Lowest idle power Highest power w/o heatsink 1000 Output power [W/Channel] Scalable in output power 2000 Best audio performance By combining our core principles, competencies, and leadership in groundbreaking power semiconductors with revolutionary audio amplifier technologies, such as MERUSTM, we provide solutions that are smaller, lighter, more robust and flexible, running with less heat dissipation. In addition to outstanding quality and reliability, Infineon's amplifier solutions are designed to maximize power efficiency and dynamic range while providing best-in-class performance in product form factors that make them an optimal fit for any high-end application. These include portable/battery powered applications, voice controlled active speakers, television sets, stereo HiFi, soundbars, monitors, power-over-ethernet (PoE) and multichannel systems. Design with Infineon's solutions to benefit from: Exceptional audio performance Maximized power efficiency Maximized output power Design freedom Fast time to market www.infineon.com/merus For more details on the product, click on the part number. 232 20-300 V MOSFETs Integrated MERUSTM multilevel amplifier ICs for class D audio solutions Applications Audio amplifier ICs 500-950 V MOSFETs High power efficiency and density in small packages WBG semiconductors With its revolutionary MERUSTM integrated multilevel class D audio amplifier ICs, Infineon is leading in efficiency and power density. Compared to traditional class D amplifier ICs, which produce only two voltage output levels, multilevel amplifier ICs use additional on-chip MOSFETs and capacitors to produce outputs with a higher signal granularity i.e. higher switching frequencies and/or multiple output signal levels - typically up to five voltage levels Filterless topology with "flying capacitor" of an integrated class D IC Multilevel amplifiers Discrete IGBTs PVDO PWM modulator Power ICs Protection Key features Key benefits Multilevel switching technology Highest efficiency and power density Scalable signal "granularity" Potential LC filter removal Proprietary circuits architecture Low THD+N Intelligent switches and input ICs Features and benefits Cooler operation Gate driver ICs Low power loss Virtually no switching loss measurable in idle mode Efficiency where it matters for audio reproduction XENSIVTM sensors Microcontrollers For MERUSTM integrated multilevel audio amplifier ICs, amplifier efficiency at average output power is key. As the graph on the left shows, MERUSTM multilevel amplifier is much more effective than the traditional class D amplifier, which translates into less power consumption in AC input and in battery powered audio applications. Wireless audio Packages www.infineon.com/merus For more details on the product, click on the part number. 233 Audio amplifier ICs MERUSTM integrated audio amplifier multi-chip modules (MCM) Integrated components for scalable output power and superb audio performance Multi-chip modules integrate PWM controller and power MOSFETs in a single package to offer a highly efficient, compact solution that reduces component count, shrinks PCB size up to 70 percent, and simplifies class D amplifier design. Multi-chip audio amplifier module Multi-chip audio amplifier module Analog input class D driver family Power MOSFETs PWM input class D driver family LPF PWM modulator Gate driver Protection Features and benefits Key features Key benefits Single package with integrated PWM controller and audio-performanceoptimized power MOSFET Extended battery playback time Overcurrent protection Thermal shutdown Floating differential input Clip detection Best-in-class power efficiency and audio performance Lower component count, leading to design simplification Unrivalled audio performance Smaller solution size (BOM reduction, system level cost savings) Eliminated need for heatsink High noise immunity Reliable operation Thermal efficiency Compatible with single supply or split rail configuration Click noise reduction Wireless audio www.infineon.com/merus For more details on the product, click on the part number. 234 20-300 V MOSFETs Discrete MERUSTM audio amplifier driver ICs with MOSFET and gallium nitride CoolGaNTM 400V e-mode HEMTs Applications Audio amplifier ICs 500-950 V MOSFETs Scalable output power with a unified design platform WBG semiconductors Infineon's discrete audio solutions are scalable to various output power levels, simply by replacing the external MOSFETs or CoolGaNTM e-mode HEMTs of the driver-transistor combinations. Key parameters for the transistors used in discrete class D audio applications include on-state resistance (RDS(on)), gate charge (QG), and reverse recovery charge (Qrr). Our products are specifically suitable for class D audio applications and optimized for these parameters to achieve maximized efficiency, THD and EMI amplifier performance. The CoolGaNTM 400V e-mode HEMTs portfolio is specifically built for class D audio requirements, with high performing SMD packages to fully utilize the benefits of gallium nitride. Discrete IGBTs Audio solution overview PWM modulator Power ICs Gate driver Protection PWM Input class D driver family Intelligent switches and input ICs Digital audio MOSFET Analog input class D driver family Integrated PowIRAudio class D driver family StrongIRFETTM OptiMOSTM, CoolMOSTM 40~600 V Gate driver ICs MERUSTM Audio IC, MCM, Multi-level IC Switch mode power supplies - Energy efficiency on it's next level! Dedicated Class D SMPS from 100~500 W Key advantages Unified design platform Superior audio performance Scalable output power up to over 2 kW per channel Increased reliability Simple yet effective - exchange of external MOSFET triggers alteration in output power level Unique audio experience XENSIVTM sensors Key benefits Microcontrollers Features and benefits Best-in-class power efficiency Wireless audio Packages www.infineon.com/merus For more details on the product, click on the part number. 235 Audio amplifier ICs Integrated class D audio amplifier IC portfolio MERUSTM integrated multilevel audio amplifier IC product portfolio MA12040 MA12040P MA12070 Number of audio channels 2xBTL 2xBTL 2xBTL 2xBTL Max. peak power @ 4 ohm 10% THD 2x40 W 2x40 W 2x80 W 2x80 W Supply voltage 4-18 V 4-18 V 4-26 V 4-26 V Analog Digital Analog 3-level and 5-level modulation MA12070P Max. PWM frequency Specifications 726 kHz Audio input Volume and dynamic range control Idle power dissipation Max. output and all channels switching <100 mW <110 mW <160 mW <160 mW >107dB DNR 55 V output noise 0.003% THD+N >98dB DNR 135 V output noise 0.006% THD+N >110dB SNR 45 V output integrated 0.004% THD+N 101dB SNR 140 V output noise 0.007% THD+N Comprehensive protection scheme * Configurable for SE or PBTL operation I2C communication Filterless implementation 64-pin QFN package with exposed thermal pad 64-pin QFN package with exposed thermal pad 64-pin QFN package with exposed thermal pad 64-pin QFN package with exposed thermal pad EVAL_AUDIO_MA12040 EVAL_AUDIO_MA12040P EVAL_AUDIO_MA12070 EVAL_AUDIO_MA12070P Audio performance (PMP2) Features Digital HiRes audio compliant Package type Evaluation boards *All ICs carry a full protection scheme comprising undervoltage lockout, overtemperature warning/error, short circuit/overload protection, power stage pin-to-pin short circuit, error reporting through serial interface (I2C), and DC protection MERUSTM integrated audio amplifier multi-chip modules (MCMs) IR4301M IR4321M IR4311M IR4302M IR4322M 1 1 1 2 2 2 160 W 90 W 45 W 130 W 100 W 40 W ~ 31 V or 62 V ~ 25 V or 50 V ~ 15 V or 30 V ~ 31 V or 62 V ~ 25 V or 50 V ~ 16 V or 32 V 500 kHz 500 kHz 500 kHz 500 kHz 500 kHz 500 kHz Differential audio input Over-current protection Number of audio channels Specifications Max. power per channel Supply voltage Max. PWM frequency Integrated power MOSFET Voltage Features IR4312M 80 V 60 V 40 V 80 V 60 V 40 V PWM controller Thermal shutdown Click noise reduction Clip detection Package type 5 x 6 mm QFN 5 x 6 mm QFN 5 x 6 mm QFN 7 x 7 mm QFN 7 x 7 mm QFN 7 x 7 mm QFN Evaluation boards IRAUDAMP12 IRAUDAMP19 IRAUDAMP21 IRAUDAMP15 IRAUDAMP16 IRAUDAMP17 IRAUDAMP22 IRAUDAMP18 www.infineon.com/merus For more details on the product, click on the part number. 236 IRS20957SPBF IRS2092SPBF IRS2052M IRS2093MPBF 500 W 500 W 500 W 300 W 300 W 500 W Supply voltage 100 V 100 V 100 V 100 V 100 V 200 V Gate sink/source current 2.0/2.0 A 1.2/1.0 A 1.2/1.0 A 0.6/0.5 A 0.6/0.5 A 0.6/0.5 A Overcurrent protection Overcurrent flag PWM input Floating input Deadtime Protection control logic PWM controller Clip detection Click noise reduction Temperature sensor input Thermal shutdown Clock input Package type 16-pin SOIC narrow Evaluation boards WBG semiconductors Features IRS2452AM 16-pin SOIC narrow 16-pin SOIC narrow MLPQ48 MLPQ48 MLPQ32 IRAUDAMP4A IRAUDAMP6 IRAUDAMP5 IRAUDAMP7S IRAUDAMP7D IRAUDAMP9 IRAUDAMP10 IRAUDAMP8 EVAL_IRAUDAMP23 Discrete IGBTs Specifications IRS20965S Max power per channel 500-950 V MOSFETs Number of audio channels 20-300 V MOSFETs MERUSTM discrete audio amplifier driver IC product portfolio Applications Audio amplifier ICs Recommended MOSFET (through-hole) product portfolio Recommended discrete audio driver IC 2 4 8 150 W IRS2093MPBF IRFB4019 IRFB4019 IRFI4020H-117P IRFI4020H-117P IRS2052M IRFB5615 IRFB4019 300 W IRS2092SPBF IRFB4228PBF IRFB4227 IRFB4229 500 W IRS20957SPBF IRFB4228PBF IRFB4227 IRFB4229 750 W IRFB4227 IRFB4229 1000 W IRFP4668 IRFB4229 x 2 Intelligent switches and input ICs 200 W Power ICs Speaker resistance Output power IRS2093MPBF works up to 150 W and IRS2052M works up to 300 W. IRS2092SPBF and IRS20957SPBF work with all power levels listed above. Gate driver ICs Recommended MOSFET (DirectFETTM) product portfolio Recommended discrete audio driver IC 2 150 W IRS2093MPBF 200 W IRS2052M 300 W 500 W 4 8 IRF6645 IRF6665 IRF6775M IRF6646 IRF6775M IRF6775M IRS2092SPBF IRF6644 IRF6775M IRF6785 IRS20957SPBF IRF6643 IRF6641 Microcontrollers Speaker resistance Output power Recommended CoolGaNTM 400 V e-mode HEMT product portfolio HSOF-8-3 (TO-Leadless) Pmax. Up to 200 W RDS(on) max. 70 m OPN IGT40R070D1 E8220 Recommended discrete audio amplifier driver IC XENSIVTM sensors CoolGaNTM 400 V e-mode HEMT Package IRS20957SPBF Packages www.infineon.com/merus For more details on the product, click on the part number. 237 Audio amplifier ICs Recommended audio evaluation boards Enabling fast time to market and device performance evaluation MERUSTM integrated multilevel audio amplifier IC evaluation boards EVAL_AUDIO_MA12070 Number of audio channels: 2 channels BTL or 1 channel PBTL or 2 channels SE + 1 BTL or 4 channels SE Output power per channel (2xBTL, Peak, 10% THD, 4 ): 2x 80 W Featured module IC: MA12070 Input: Analog OPN: EVALAUDIOMA12070TOBO1 EVAL_AUDIO_MA12070P Number of audio channels: 2 channels BTL or 1 channel PBTL or 2 channels SE + 1 BTL or 4 channels SE Output power per channel (2xBTL, Peak, 10% THD, 4 ): 2x 80 W Featured module IC: MA12070P Input: Digital OPN: EVALAUDIOMA12070PTOBO1 MERUSTM integrated audio amplifier multi-chip module (MCM) evaluation boards IRAUDAMP12 Number of audio channels: 2 Output power per channel [RMS]: 130 W Featured class D IC: IR4301M Input: Analog OPN: IRAUDAMP12 IRAUDAMP17 Number of audio channels: 2 Output power per channel [RMS]: 100 W Featured class D IC: IR4302M Input: Analog OPN: IRAUDAMP17 IRAUDAMP19 Number of audio channels: 2 Output power per channel [RMS]: 100 W Featured class D IC: IR4301M Input: Analog OPN: IRAUDAMP19 IRAUDAMP21 Number of audio channels: 2 Output power per channel [RMS]: 135 W Featured class D IC: IR4321M Input: Analog OPN: IRAUDAMP21 IRAUDAMP22 Number of audio channels: 2 Output power per channel [RMS]: 100 W Featured class D IC: IR4322M Input: Analog OPN: IRAUDAMP22 www.infineon.com/merus For more details on the product, click on the part number. 238 Applications 20-300 V MOSFETs Audio amplifier ICs IRAUDAMP10 IRAUDAMP6 IRAUDAMP7S Number of audio channels: 2 Output power per channel [RMS]: 500 W Featured driver IC: IRS2452AM Featured MOSFET: IRFI4019H-117P OPN: IRAUDAMP7S Intelligent switches and input ICs Number of audio channels: 2 Output power per channel [RMS]: 250 W Featured driver IC: IRS20957S Featured MOSFET: IRF6785MTRPbF OPN: IRAUDAMP6 WBG semiconductors IRAUDAMP9 Number of audio channels: 2 Output power per channel [RMS]: 120 W Featured driver IC: IRS2092S Featured MOSFET: IRF6645TRPbF OPN: IRAUDAMP5 Discrete IGBTs IRAUDAMP5 Number of audio channels: 2 Output power per channel [RMS]: 120 W Featured driver IC: IRS20957S Featured MOSFET: IRF6645TRPbF OPN: IRAUDAMP4A Power ICs IRAUDAMP4A 500-950 V MOSFETs Discrete MERUSTM audio amplifier driver IC and MOSFET evaluation boards Gate driver ICs IRAUDAMP23 Number of audio channels: 2 Output power per channel [RMS]: 500 W Featured driver IC: IRS2452AM Featured MOSFET: IPP60R180C7 OPN: IRAUDAMP23 Microcontrollers Number of audio channels: 2 Output power per channel [RMS]: 370 W Featured driver IC: IRS2052M Featured MOSFET: IRF6775MTRPbF OPN: IRAUDAMP10 XENSIVTM sensors Number of audio channels: 1 Output power per channel [RMS]: 1700 W Featured driver IC: IRS2092S Featured MOSFET: IRFB4227PbF OPN: IRAUDAMP9 Packages www.infineon.com/merus For more details on the product, click on the part number. 239 Audio amplifier ICs Discrete audio amplifier driver IC and CoolGaNTM 400 V evaluation board Power supply units for audio evaluation boards EVAL_AUDAMP24 IRAUDPS1 Number of audio channels: 2 Output power per channel [RMS]: 300 W @ 1% Featured driver IC: IRS20957S Featured HEMT IGOT40R070D1 IGT40R070D1 OPN: EVAL_AUDAMP24 Input voltage: 12 VDC Output voltage: 35 V Output power per channel [RMS]: 100 W Featured driver IC: IR2085 Description: 250-1000 W scalable audio power supply OPN: IRAUDPS1 IRAUDPS3 Input voltage: 110/220 VAC Output voltage: 30 V Output power per channel [RMS]: 200 W Featured driver IC: IRS27952S Description: Power supply for class D audio amplifier OPN: IRAUDPS3 www.infineon.com/merus www.infineon.com/gan For more details on the product, click on the part number. 240 Packages For more details on the product, click on the part number. 241 XENSIVTM sensors Microcontrollers Gate driver ICs Intelligent switches and input ICs Power ICs Discrete IGBTs WBG semiconductors 500-950 V MOSFETs 20-300 V MOSFETs Applications Lighting ICs CDM10V and CDM10VD - most flexible dimming interface ICs for 0-10 V input Infineon's fully integrated dimming solutions Infineon's CDM10V and CDM10VD are the industry's first single-chip lighting interface ICs. They are capable of transforming an analog 0-10 V input into a PWM or dimming input signal, required by a lighting controller IC. CDM10V and CDM10VD devices are dedicated for commercial and industrial LED lighting applications. The compact and highly integrated devices allow designers to replace up to 25 discrete components, used in conventional 0-10 V dimming schemes, with a single device. Supplied in an ultra-miniature 6-pin SOT package, the CDM10Vx and CDM10VDx perfectly match small PCBs with high component densities. Typical application schematic using CDM10V 85- 305 V AC Linefilter CDM10V ICL8105 VCC supply 11-25 V VCC LDO 0-10 V interface Resistor/potentiometer PWM-generator Rdim+ Bandgap OSC Current source DIM UVLO GND Iout VFSS ADC 8-bit FSM Current source PWM_out PWM_gen Analog eFuses 8-bit UART RxD Digital Features and benefits Key benefits Key advantages Active dimming (0-10 V) and passive dimming (resistor) Single-device solution leading to low BOM and PCB savings Embedded digital signal processing which maintains minimum variations from device to device Dimming ICs in small SOT-23 package for high power density designs Granular portfolio for highest flexibility and easy design-in PWM input Wide input VCC range 11-25 V, extended range down to 6 V for CDM10V One-time configurable device: CDM10V and preconfigured devices with various feature sets Product type Attractive pricing and faster time to market Iout [mA] Min. duty cycle [%] PWM output frequency [kHz] Dimmer/resistor bias current [A] Dimm-to-Off Ordering code CDM10V 5 1/2/5/10 0.2/0.5/1/2 50/100/200/500 Disabled/enabled CDM10VXTSA1 CDM10V-2 5 n.a. 1 200 Enabled CDM10V2XTSA1 CDM10V-3 5 1 1 200 Disabled CDM10V3XTSA1 CDM10V-4 5 n.a. 2 100 Enabled CDM10V4XTSA1 CDM10VD 5 5 1 120 Enabled CDM10VDXTSA1 CDM10VD-2 5 10 1 120 Enabled CDM10V2DXTSA1 CDM10VD-3 1 5 1 120 Enabled CDM10V3DXTSA1 CDM10VD-4 1 10 1 120 Enabled CDM10V4DXTSA1 Board name COOLDIM_PRG_BOARD Description Configuration board for CDM10V only Ordering code COOLDIMPRGBOARDTOBO1 REF-XDPL8220-U30W 30 W two stage PFC FB digital power, efficient and flicker free reference design with CDM10V REFXDPL8220U30WTOBO1 REF-XDPL8105-CDM10V 40 W single stage PFC FB digital power reference design with CDM10V REFXDPL8105CDM10VTOBO1 www.infineon.com/cdm10V For more details on the product, click on the part number. 242 20-300 V MOSFETs DC-DC switch mode LED driver ICs Applications Lighting ICs ILD8150/ILD8150E - 80 V DC-DC buck LED driver IC for high-power LEDs and high-performance hybrid dimming 500-950 V MOSFETs The ILD8150 is 80 V DC-DC converter IC, designed to be used in LED applications to drive high power LEDs. For applications operating close to safe extra low voltage (SELV) limits, it provides a high safety voltage margin. The buck LED driver IC is tailored for LEDs in general lighting applications with average currents up to 1.5 A using a high-side integrated switch. Several performance and protection features provide the right fit for professional LED lighting. WBG semiconductors The hysteretic current control provides an extremely fast regulation and stable LED current combined with good EMI performance. The efficiency of the LED driver IC is remarkably high, reaching more than 95 percent efficiency over a wide range. A PWM input signal between 250 Hz and 20 kHz controls dimming of the LEDs current in analog mode from 100 to 12.5 percent and 12.5 to 0.5 percent in PWM mode with flicker-free modulation frequency of 3.4 kHz. Discrete IGBTs Digital PWM dimming detection with high resolution makes ILD8150/E the perfect LED driver IC for the use together with microcontrollers. Precise output current accuracy from device to device under all loads and input voltages conditions makes it perfect for tunable white and flat panel designs where current must be identical string to string. BOOT DIM SW Power ICs SD ILD8150/ILD8150E VIN Intelligent switches and input ICs CS VCC 80 V GND Key advantages Wide input voltage ranging from 8-80 VDC Efficiency > 95 percent Hybrid dimming for flicker free light down to 0.5 percent Analog dimming 100 percent - 12.5 percent PWM dimming 12.5 percent - 0.5 percent with 3.4 kHz flicker-free modulation, dim-to-off Up to 2 MHz switching frequency Typical 3 percent output current accuracy Soft-start Overtemperature protection PWM dimming input, with 250 Hz to 20 kHz PWM dimming frequency Pull-down transistor to avoid LED glowing in dim-to-off Up to 1.5 A average output current, adjustable via shunt resistor Microcontrollers Key benefits Gate driver ICs Features and benefits DSO-8 package to enable wave soldering DSO-8 with exposed pad for higher thermal performance (ILD8150E) Type Description 80 V DC-DC buck LED driver IC DSO-8 Package Ordering code ILD8150XUMA1 ILD8150E 80 V DC-DC buck LED driver IC DSO-8 exposed pad ILD8150EXUMA1 REF_ILD8150_DC_1.5A Reference design board 1.5 A Board with ILD8150E REFILD8150DC15ATOBO1 REF_ILD8150_DC_1.5A_SMD Reference design board 1 A with SMD inductor Board with ILD8150E REFILD8150DC15ASMDTOBO1 XENSIVTM sensors ILD8150 Packages www.infineon.com/ild8150 For more details on the product, click on the part number. 243 Lighting ICs DC-DC switch mode LED driver ICs ILD series DC-DC switch mode LED driver ICs The ILD series are switch mode LED driver ICs for high power LEDs. They combine protection features that contribute to the lifetime of LEDs with the flexibility in output current range up to multiple amperes. The new ILD series include LED driver ICs with integrated power stage, as well as with external MOSFET achieving up to 98 percent driver efficiency across a wide range of general lighting applications. (optional for soft start) Features and benefits Key benefits Key advantages Wide input voltage range up to 80 V Superior adjustable overtemperature protection for ILD6150 and ILD6070 contributing to longer LED lifetime Scalability in output current from 90 mA up to multiple amperes Overvoltage and overcurrent protection Alternative dimming concepts: digital or analog Hybrid dimming: analog and digital output combined for flicker free light down to 0.5 percent realized with ILD8150 Type Vs Vs Iout (typ.) Iout (min.) (max). [mA] (max.) [V] [V] [mA] ILD1151 4.5 45 90 ILD6070 4.5 60 ILD6150 4.5 ILD8150 ILD8150E 3.000 Package Dimming ILD1151 supports boost, buck-boost and SEPIC topologies Topology fsw SSOP-14 Analog/digital Boost, buckboost SEPIC Adjustable 100-500 kHz 700 Selectable by resistor DSO-8 exposed pad Digital output Hysteretic buck 1 MHz 60 Selec1.500 table by resistor DSO-8 exposed pad Digital output Hysteretic buck 1 MHz 8 80 Selec- 1.500 table by resistor DSO-8 8 80 Selec- 1.500 table by resistor DSO-8 exposed pad Hybrid (analog Hysteretic buck 2 MHz down to 12% and PWM down to 0,5%)dimming output Hybrid (analog Hysteretic buck 2 MHz down to 12% and PWM down to 0,5%) dimming output Features Ordering code Multi topology controller, constant current or constant voltage mode, overvoltage, overcurrent, short on GND protection Integrated switch rated up to 700 mA, PWM or analog dimming input, adjustable overtemperature protection, overcurrent protection Integrated switch rated up to 1.500 mA, PWM or analog dimming input, adjustable overtemperature protection, overcurrent protection Integrated 80 V switch rated up to 1.500 mA with low RDS(on), hybrid dimming down to 0.5%, UVLO, thermal protection, digital soft-start, flicker-free operation Integrated 80 V switch rated up to 1.500 mA with low RDS(on), hybrid dimming down to 0.5%, UVLO, thermal protection, digital soft-start, flicker-free operation ILD1151XUMA1 ILD6070XUMA1 ILD6150XUMA1 ILD8150XUMA1 ILD8150EXUMA1 www.infineon.com/ild For more details on the product, click on the part number. 244 20-300 V MOSFETs Linear current regulators Applications Lighting ICs 500-950 V MOSFETs 60V linear LED controller IC with active headroom control for power- and costefficient linear regulation on DC-DC side WBG semiconductors A unique feature of BCR601 is to provide feedback to the primary side via an optocoupler to control the output voltage of the primary side converter, e.g. XDPL8218. The integrated control loop minimizes the voltage overhead and power dissipation of the external driver transistor. This capability, coupled with the adjustment of voltage overhead by external configuration according to application needs, leads to power- and cost-efficient LED systems. AC line ripple suppression, analog dimming option and various protection features round up this device for LED drivers allowing for flicker-free light and longevity of LEDs. Typical application schematic Cin ROVP2 Discrete IGBTs ROVP1 COVP RZENER Controller IC e.g. XDPL8218 CDROP Power ICs RDROP ROPTO OVP COPTO VDROP ZD1 VS DRV BCR601 GND MFIO VSENSE N-channel MOSFETs e.g. OptiMOSTM BSP716N Rset Intelligent switches and input ICs DAC/MCU e.g. XMC1200 OPTO Rsense RPI CPI Gate driver ICs Features and benefits Key features and benefits Active headroom control (supports an optocoupler feedback loop to primary side minimizing power losses) Dimming in pure analog mode down to 3% Suppresses the voltage ripple of the power supply driving a constant LED current for high light quality The embedded hot plug protection allows plug in and plug out of any LED load during operation without damaging the LEDs Microcontrollers Supports wide current range depending on external driver transistor Supply voltage range up to 60 V Gate driver current 10 mA LED current can be adjusted by Rset functionality XENSIVTM sensors Overtemperature protection and adjustable overvoltage protection Order information for BCR601 Type Description Ordering code BCR601 60 V linear LED controller IC with voltage feedback to primary side BCR601XUMA1 DEMO_BCR601_60V_IVCTRL Demonstration board BCR601 current and voltage control, 500 mA DEMOBCR60160VIVCTRLTOBO1 Packages www.infineon.com/bcr601 For more details on the product, click on the part number. 245 Lighting ICs 60 V linear LED controller IC for dimmable LED applications The BCR602 is a perfect fit for 48V LED applications by combining small form factor with low cost. Through its higher integration, BOM savings and ensuring long lifetime of LEDs, this controller has many advantages compared to discrete solutions. BCR602 is a linear LED controller IC regulating the LED current with an external driver transistor. It supports either NPN bipolar transistors or N-channel MOSFETs to cover a wide LED current and power range. AC line ripple suppression, flexible dimming options and protection features make it a perfect fit for LED modules allowing for dimmable, flicker-free light and longevity of LEDs. Typical application schematic Rpred Controller IC e.g. XDPL8218 N-channel MOSFETs e.g. OptiMOSTM BSP716N VS DRV GND BCR602 VSENSE MFIO Rset R1 DAC PWM Microcontroller e.g. XMC1200 V Features and benefits Key features and benefits Suppresses the voltage ripple of the power supply dring a constant LED current for high light quality Deep dimming down to 1% (PWM), pure analog dimming down to 3% The embedded hot plug protection allows plug in and plug out of any LED load during operation without damaging the LEDs Supports wide current range depending on external driver transistor Supply voltage range up to 60 V makes it ideal for 48 V designs Gate driver current 10 mA LED current can be adjusted by Rset functionality Overtemperature protection Order information for BCR602 Type Description Ordering code BCR602 60 V linear LED controller IC BCR602XTSA1 DEMO_BCR602_60V_ICTRL Demonstration board BCR602U current control, 200 mA DEMOBCR60260VICTRLTOBO1 www.infineon.com/bcr602 For more details on the product, click on the part number. 246 20-300 V MOSFETs BCR40x and BCR43x linear LED driver ICs for low power LEDs The advantage versus discrete semiconductors is: Reduced part count and assembly effort Pretested output current Defined negative temperature co-efficient protection Download now the application note "Driving low power LEDs from 10 to 65 mA LED driver ICs with BCR401W and BCR402W family" WBG semiconductors Needing more details on replacing resistors? 500-950 V MOSFETs The BCR40x family is the smallest size and lowest cost series of LED drivers. These products are perfectly suited for driving low power LEDs in general lighting applications. Thanks to AEC-Q101 qualification, it may also be used in automotive applications such as brake lights or interior. The advantage over resistor biasing is: Long lifetime of LEDs due to constant current in each LED string Homogenous LED light output independent of LED forward voltage binning, temperature increase and supply voltage variations Applications Lighting ICs Discrete IGBTs Features and benefits Key features and benefits Output current from 10 to 100 mA (adjustable by external resistor) Supply voltage up to 18 V (BCR401W, BCR402W) and up to 40V (BCR401U, BCR402U, BCR405U, BCR430U, BCR431U *) Reduction of output current at high temperature, contributing to long lifetime LED systems Power ICs Extra low voltage drop for more voltage headroom and flexibility in designs (BCR430U, BCR431U) Excellent ESD perfomance on device and system level for BCR431U Very small form factor packages with up to 750 mW max. power handling capability Intelligent switches and input ICs LED current versus voltage drop (VS = 24 V) 110 90 ILED [mA] 80 70 60 Rset = 6.2 k Rset = 9.1 k 50 40 30 100 150 200 250 Vdrop [mV] 300 350 400 Gate driver ICs The voltage drop at the integrated LED driver stage can go down to 135 mV at 50 mA and less improving the overall system efficiency and providing extra voltage headroom to compensate for tolerances of LED forward voltage or supply voltage. With the BCR430U and BCR431U, additional LEDs can be added to lighting designs or longer LED strips can be created without changing the supply voltage. 100 Group Topology Vs (min.) Vs (max.) [V] [V] Iout (typ.) [mA] Iout (max.) [mA] BCR401U LED drivers for low-power LEDs Linear 1.4 BCR401W LED drivers for low-power LEDs Linear 1.2 BCR402U LED drivers for low-power LEDs Linear BCR402W LED drivers for low-power LEDs BCR405U BCR430U * Dimming 40 10.0 65 SC74 750 BCR401UE6327HTSA1 18 10.0 60 SOT343 500 BCR401WH6327XTSA1 1.4 40 20.0 65 SC74 750 BCR402UE6327HTSA1 Linear 1.4 18 20.0 60 SOT343 500 BCR402WH6327XTSA1 LED drivers for low-power LEDs Linear 1.4 40 50.0 65 LED drivers for low-power LEDs Linear 6 42 Defined by Rset 100 BCR431U * * LED drivers for low-power LEDs Linear 6 42 - - PWM by external transistor - Package Ptot (max.) [ mW] Ordering code SC74 750 BCR405UE6327HTSA1 SOT23 600 BCR430UXTSA1 SOT23-6 600 BCR431UXTSA1 XENSIVTM sensors Type Microcontrollers Low-power LED driver ICs (5-100 mA) * Ultralow voltage drop version BCR430U with only 135 mV at 50 mA * * Coming soon Packages www.infineon.com/bcr For more details on the product, click on the part number. 247 Lighting ICs BCR32x/BCR42x/BCR450/BCR601/BCR602 linear LED driver and controller ICs for medium and high power LEDs The BCR32x and BCR42x LED drivers are dedicated linear regulators for 0.5 W LEDs with a maximum output current of 250 mA. They are optimized in terms of cost, size and feature set for medium power LEDs in general lighting applications. Thanks to AEC-Q101 qualification, it may also be used in automotive applications such as brake lights or interior. Typical application schematic + - VS RSENSE (optional) Von: BCR320 BCR420 Microcontroller Von: BCR321 BCR421 Features and benefits Key features and benefits Output current from 10 mA up to 300 mA for BCR32x (200 mA for BCR42xU), adjustable by external resistor Supply voltage up to 40 V for BCR42x (24 V for BCR32x) Direct microcontroller interface for PWM dimming with BCR321U/BCR421U Reduction of output current at high temperature, contributing to long lifetime LED systems Dedicated 60 V devices targeting 48 V systems BCR601 for LED Driver/ BCR602 for LED Module Very small form factor packages with up to 1000 mW max. power handling capability Medium- and high-power LED driver ICs Type Group BCR320U LED drivers for mid-power LEDs BCR321U Topology Vs (min.) [V] Vs (max.) [V] Iout (typ.) [mA] Iout (max.) [mA] Dimming Package Ptot (max.) [ mW] Ordering code Linear 1.4 24 250 300 No SC74 1000 BCR320UE6327HTSA1 Linear 1.4 24 250 300 Digital input SC74 1000 BCR321UE6327HTSA1 BCR420U Linear 1.4 40 150 200 No SC74 1000 BCR420UE6327HTSA1 BCR421U Linear 1.4 40 150 200 Digital input SC74 1000 BCR421UE6327HTSA1 BCR450 LED controller Linear 3.0 27 70 Ext. switch Digital input SC74 500 BCR450E6327HTSA1 BCR601 1) LED controller Linear 8.0 60 Ext. switch Ext. switch Analog PG-DSO-8 360 BCR601XUMA1 BCR602 2) LED controller Linear 8.0 60 Ext. switch Ext. switch Analog/PWM PG-SOT23-6 360 BCR602XTSA1 www.infineon.com/bcr 1) See page 245 for detailed description 2) See page 246 for detailed description 248 For more details on the product, click on the part number. Applications 20-300 V MOSFETs 500-950 V MOSFETs WBG semiconductors Discrete IGBTs Power ICs AC-DC LED driver IC Intelligent switches and input ICs Digital and mixed signal, single- and dual-stage high voltage control ICs for LED drivers Gate driver ICs XDPTM digital power - digital single- and dual-stage flyback combo controllers The XDPTM portfolio of high performance digital power control ICs addresses today's challenges such as smart or connected lighting, meeting demanding LED driver requirements with a unique set of features. XENSIVTM sensors Microcontrollers Mixed-signal control ICs for solid-state lighting luminaires Infineon's mixed-signal control ICs for LED drivers deliver excellent power quality and high efficiency for LED lighting applications supporting dimming levels down to 1%. The integration of advanced functions saves external components and minimizes system cost. The wide variety of features and functions gives the option to choose the best fitting part for the application. Packages www.infineon.com/offline-led-driver For more details on the product, click on the part number. 249 Lighting ICs XDPTM LED The IC family XDPTM is the first all-in-one package solutions combining a digital controller with key power peripherals. Such integration provides exceptional flexibility and performance. The XDPTM family addresses essential features for advanced LED driver. XDPL8105 - digital flyback controller IC for LED driver The XDPL8105 is a digital, single-stage flyback controller with high power factor for constant current LED driver. The device offers versatile functions for different indoor and outdoor lighting applications. The IC is available in a DSO-8 package and it provides a wide feature set, requiring a minimum of external components. The advanced control algorithms in the digital core of the XDPL8105 provide multimode operation for high efficiency. Configurable parameters allow last minute changes, shorten the product development and reduce hardware variants. The extensive set of configurable standard and sophisticated protection mechanisms ensure safe, reliable and robust LED driver device for diverse use cases. Typical application schematic Iout 85 ...305 VAC Output Optional VCC HV VCC CoolMOSTM regulator ZCD GD XDPL8105 CS R_CS GND Features and benefits Key features and benefits Constant current with primary side regulation Supports AC and DC input Nominal input voltage range 90-305 VAC or 120-350 VDC Integrated 600 V start-up cell Power factor > 0.9 and THD < 15 percent over wide load range Highly accurate primary side control output current typ. 3 percent Reference board efficiency > 90 percent Internal temperature guard with adaptive thermal management Multimode operation QRM (quasi-resonant mode) DCM (discontinuous conduction mode) ABM (active burst mode) Digital parameters Relevant error conditions are monitored and protected Undervoltage Overvoltage Open load Output shorted Order information for XDPL8105 Type Description Ordering code XDPL8105 Digital flyback controller IC XDPL8105XUMA1 REF-XDPL8105-CDM10V 40 W reference design with CDM10V isolated 0 V-10 V dimming interface REFXDPL8105CDM10VTOBO1 www.infineon.com/xdpl8105 For more details on the product, click on the part number. 250 20-300 V MOSFETs XDPL8210 - digital flyback constant current controller IC for LED driver with 1 percent dimming Applications Lighting ICs WBG semiconductors 500-950 V MOSFETs The XDPL8210 is a digital, single-stage, quasi-resonant flyback controller with high power factor and high precision primary side controlled constant current output. The IC is available in a DSO-8 package and it provides a wide feature set, which requires only a small number of external components. Sophisticated algorithms provide flicker-free dimming below one percent. The driver fully supports IEC61000-3-2 class C designs. The limited power mode improves functional safety, while configurable parameters allow last minute changes, shorten the product development and reduce hardware variants. The extensive set of configurable standard and sophisticated protection mechanisms ensure safe, reliable and robust LED driver for a large set of use cases. Typical application schematic Iout 90 ...305 VAC Output Optional VCC regulator VCC CoolMOSTM HV ZCD GD PWM XDPL8210 Discrete IGBTs CVCC CS Power ICs RCS GND Intelligent switches and input ICs Features and benefits Key features and benefits Constant current with primary side regulation Supports AC and DC input Nominal input voltage range 90-305 VAC or 90-430 VDC Reference board efficiency > 90 percent Power factor > 0.9 and THD < 15 percent over wide load range Gate driver ICs Standby power < 100 mW Internal temperature guard with adaptive thermal management Multimode operation QRM (quasi-resonant mode) DCM (discontinuous conduction mode) ABM (active burst mode) Microcontrollers Digital parameters XENSIVTM sensors Relevant error conditions are monitored and protected Undervoltage Overvoltage Open load Output shorted Order information for XDPL8210 Type Description Ordering code XDPL8210 Digital flyback constant current controller IC XDPL8210XUMA1 REF-XDPL8210-U35W 35 W reference design with CDM10V isolated 0 V-10 V dimming interface REFXDPL8210U35WTOBO1 Packages www.infineon.com/xdpl8210 For more details on the product, click on the part number. 251 Lighting ICs XDPL8218 - high power factor constant voltage flyback IC with secondary side regulation The XDPL8218 is a digital, highly integrated, future-proof device combining a constant voltage quasi-resonant flyback controller with algorithms for high power factor and low THD. The main application field for XDPL8218 are dual stage designs with a DC-DC stage at secondary side and XDPL8218 as primary side. The device manages wide load ranges and reacts fast and stable to dynamic load changes. The digital core of the XDPL8218 enables high efficiency over full output power range, multimode operation with quasi-resonant switching at high power, discontinuous conduction mode frequency reduction at medium power and active burst mode at low power. The XDPL8218 is available in a DSO-8 package. Typical application schematic Output Input VCC CoolMOSTM CVCC ZCD GD HV CS XDPL8218 RCS GND FB Feedback circuit Features and benefits Key features and benefits Constant voltage with secondary side regulation Supports AC and DC input Nominal input voltage range 100-305 VAC or 90-430 VDC Reference board efficiency > 90 percent Power factor > 0.9 and THD < 15 percent over wide load range Standby power < 100 mW Internal temperature guard with adaptive thermal management Brown-out and brown-in protections Embedded digital filters Multimode operation QRM (quasi-resonant mode) DCM (discontinuous conduction mode) ABM (active burst mode) Digital parameters Relevant error conditions are monitored and protected Undervoltage Overvoltage Open load Output shorted Order information for XDPL8218 Type Description Ordering code XDPL8218 Digital flyback CV-output controller IC XDPL8218XUMA1 REF-XDPL8218-U40W 40 W reference board with replaceable feedback circuit REFXDPL8218U40WTOBO1 www.infineon.com/xdpl8218 For more details on the product, click on the part number. 252 20-300 V MOSFETs XDPL8220 - digital dual stage multi-mode flyback controller for CC, CV, LP with primary side regulation 500-950 V MOSFETs The XDPL8220 simplifies for the lighting industry to realize essential features for smart lighting and increases the benefits to the end user and the luminaire manufacturers. The XDPL8220 is a digital, highly integrated, future-proof device combining a quasi-resonant PFC plus a quasi-resonant flyback digital controller with primary side regulation. The multi control features - constant voltage, constant current, and limited power - enable a highly versatile LED driver (e.g. window LED driver). The main application field of the XDPL8220 is advanced dual stage LED driver for indoor or outdoor lighting. The IC is available in a DSO-16 package. WBG semiconductors Typical application schematic DPFC LED+ CoolMOSTM SPFC GDF N EM P CSF Discrete IGBTs CoolMOSTM L Input voltage LED- XDPL8220 R_NTC V VC S ZC Applications Lighting ICs GN PW M PW M Power ICs ART UART GND Vsupply Intelligent switches and input ICs Features and benefits Key features and benefits Features and benefits Constant current, constant voltage, limited power with primary side regulation PWM dimming input controls respective analog output current Reference board efficiency > 90 percent Gate driver ICs Power factor > 0.9 and THD < 15 percent over wide load range Nominal input voltage range 100-305 VAC or 90-430 VDC Standby power < 100 mW Internal temperature guard with adaptive thermal management Microcontrollers Multimode operation QRM (quasi-resonant mode) DCM (discontinuous conduction mode) ABM (active burst mode) Digital parameters Relevant error conditions are monitored and protected Undervoltage Overvoltage Open load Type Description Ordering code XDPL8220 Digital dual stage multimode flyback Controller for CC, CV, LP XDPL8220XUMA1 REF-XDPL8220-U30W 30 W reference board with CDM10V isolated 0 V-10 V dimming interface REFXDPL8220U30WTOBO1 REF-XDPL8220-U50W 50 W reference board with CDM10V isolated 0 V-10 V dimming interface REFXDPL8220U50WTOBO1 REF-XDPL8220-U100W 100 W reference board with CDM10V isolated 0 V-10 V dimming interface REFXDPL8220U100WTOBO1 XENSIVTM sensors Order information for XDPL8220 Packages www.infineon.com/xdpl8220 For more details on the product, click on the part number. 253 Lighting ICs XDPL8221 - digital dual stage multi-mode flyback controller for CC, CV, LP with 1 percent dimming and serial interface The XDPL8221 is a digital, highly integrated, future-proof device combining a quasi-resonant PFC with a quasi-resonant flyback controller with primary side regulation. A serial communication interface supports direct communication with an external microcontroller unit (MCU). The XDPL8221 is especially designed for advanced LED driver in smart lighting or IoT applications, featuring flicker-free dimming down to 1 percent of nominal current. The device enables customizable LED driver and simplifies the generation and maintenance of different variants without increasing the number of stock keeping units. The IC is available in a DSO-16 package. Typical application schematic L Input voltage GDPFC LED+ CSPFC GDFB N TEMP CSFB LED- XDPL8221 HV VCC VS ZCD R_NTC GND UART Features and benefits PWM UART PWM Vsupply GND Key features and benefits Nominal input voltage range 100-305 VAC or 90-430 VDC Reference board efficiency > 90 percent Power factor > 0.9 and THD < 15 percent over wide load range UART Interface for control and real-time monitoring Constant current, constant voltage, limited power with primary side regulation 1 percent dimming Dim-to-off with low standby power < 100 mW Internal temperature guard with adaptive thermal management The UART interface and the command set enable to control the function of the XDPL8221 or inquire status information Multimode operation QRM (quasi-resonant mode) DCM (discontinuous conduction mode) ABM (active burst mode) Digital parameters Relevant error conditions are monitored and protected Undervoltage Overvoltage Open load Output shorted Order information for XDPL8221 Type Description XDPL8221 Digital dual stage multimode flyback Controller for CC, CV, LP with 1 percent dimming XDPL8221XUMA1 REF-XDPL8221-U50W 50 W reference board with CDM10V isolated 0 V-10 V dimming interface REF-XDPL8221-U100W 100 W reference board with CDM10V isolated 0 V-10 V dimming interface Ordering code REFXDPL8221U50WTOBO1 REFXDPL8221U100WTOBO1 www.infineon.com/xdpl8221 For more details on the product, click on the part number. 254 20-300 V MOSFETs ICL5102 Applications Lighting ICs High performance PFC + resonant controller for LCC and LLC WBG semiconductors 500-950 V MOSFETs With ICL5102 Infineon offers a highly integrated combo controller IC with a universal input of 70V to 325V, which allows manufactures to realize global designs, keeping cost for product variety and stock low. Highest efficiency of up to 94 percent by resonant topology, a THD factor less than 3.5 percent and a high power factor of more than 0.95 allow for more lumen output and less thermal load, enabling cost effective designs and keeping cost for LEDs and heat sink low. Thanks to the high integration, there is no need for additional expensive components in PFC and LLC stage, reducing the overall BOM cost. In addition integrated protection features complement the ICL5102 features. Power ICs Discrete IGBTs Typical application schematic Intelligent switches and input ICs Features and benefits Key features and benefits Small form factor LED driver and low BOM The high level of integration assures a low count of external components, enabling small form factor designs and making them ideal for compact and slimline power supplies for lighting, such as LED driver for indoor and outdoor applications Gate driver ICs High performance, digital PFC and advanced HB driver The high performance digital PFC stage achieves power factor of 99 percent, through operation in CrCM and DCM mode, in a frequency range of 22 to 500 kHz. This supports stable operation even at low-load conditions down to 0.1 percent of the nominal power without audible noise Fast time-to-light and low standby With start-up current of less than 100 A the controller provides very fast time-to-light within less than 300 ms, while standby the controller changes into active burst mode which reduces power consumption to less than 300 mW Microcontrollers Safety first The controller has a comprehensive set of protection features built in to increase the system safety. It monitors in the run mode the complete system regarding bus over- and undervoltage, open loop, overcurrent of PFC and/or inverter, output overvoltage, overtemperature and capacitive load operation Type Description Ordering code ICL5102 PFC and resonant controller for LCC and LLC ICL5102XUMA2 REF-ICL5102-U130W-CC PFC/LLC-CC constant current evaluation board 130 W LED driver REFICL5102U130WCCTOBO1 XENSIVTM sensors Order information for ICL5102 Packages www.infineon.com/icl5102 For more details on the product, click on the part number. 255 Lighting ICs ICL5102HV High performance PFC + resonant controller for LCC and LLC, supporting 980 V high side ICL5102HV control IC for LED drivers offers a unique one-package solution for lighting applications up to 350 W, supporting LLC/LCC topology. It is particularly designed to deliver best performance of total harmonic distortions (THD) and power factor (PF). Compared to level-shifter technology, the integrated coreless transformer not only further reduces the loss at high operation frequency, but also enhances the capability of handling huge negative voltage (-600 V on HSGND). Reduce the number of external components to optimize form factor and reduce bill of material (BOM) with the integrated two-stage combination controller (PFC + LLC/LCC) for lighting applications. Simplify your design and shorten time-to-market. Typical application schematic ROVP_2 ROVP_1 LPFC Cr1 OVP PFCZCD VACIN HSGD L4_4 Cr2 PFCVS D BO2 V OUT + V OUT - HSGND ICL5102HV D BO1 Cr3 Lr HSVCC PFCGD L4_3 Lm LSGD PFCCS OTP BM BO RF GND RBO1 SFH617-A3 RBM NTC CVCC RBO2 Rf_min RBM_DA CV & CC Regulator VCC LSCS Features and benefits Key features and benefits Small form factor LED driver and low BOM The high level of integration assures a low count of external components, enabling small form factor designs and making them ideal for compact and slimline power supplies for lighting, such as LED driver for indoor and outdoor applications High performance, digital PFC and advanced HB driver The high performance digital PFC stage achieves power factor of 99 percent, through operation in CrCM and DCM mode, in a frequency range of 22 to 500 kHz. This supports stable operation even at low-load conditions down to 0.1 percent of the nominal power without audible noise Fast time-to-light and low standby With start-up current of less than 100 A the controller provides very fast time-to-light within less than 300 ms, while standby the controller changes into active burst mode which reduces power consumption to less than 300 mW Safety first The controller has a comprehensive set of protection features built in to increase the system safety. It monitors in the run mode the complete system regarding bus over- and undervoltage, open loop, overcurrent of PFC and/or inverter, output overvoltage, overtemperature and capacitive load operation Order information for ICL5102HV Type Description Ordering code ICL5102HV PFC and resonant controller for LCC and LLC ICL5102HVXUMA1 REF-ICL5102HV-U150W PFC/LCC evaluation board 150 W, CC LED driver REFICL5102HVU150WTOBO1 www.infineon.com/icl5102hv For more details on the product, click on the part number. 256 20-300 V MOSFETs NFC-PWM configuration ICs Applications Lighting ICs Dual-mode NFC wireless configuration ICs with CLO function and pulse width modulation (PWM) output for lighting applications WBG semiconductors 500-950 V MOSFETs The NLM0011 is a dual-mode NFC wireless configuration IC with PWM output. It is compatible with existing analog LEDdriver designs and with the NFC-programming specification from the Module-Driver Interface Special Interest Group (MD-SIG). This device is primarily designed for LED applications to enable NFC programming. In addition, advanced features such as the constant lumen output (CLO) as well as the on/off counting are integrated, and there is no need for an additional microcontroller. Since the NLM0011 is designed to work together with mainstream analog driver ICs, there are no firmware development efforts needed. It can be easily adapted into existing designs to replace the "plug-in resistor" current configuration concept. The NLM0010 is a light version without CLO function. Typical example of NFC lighting application Discrete IGBTs Current adjustable LED driver IC IADJ ISET ADIMM R1 PWM NLM0011 NLM0010 C1 GND LB VCC Power ICs CVCC LA VCC Intelligent switches and input ICs GND Features and benefits Key benefits Key advantages Configurable pulse width modulation (PWM) output Fast and cost effective implementation of NFC programming and CLO without the need of an additional microcontroller Constant light output (CLO) with 8 configurable points Compatible with most analog LED driver designs using "plug-in resistor" method Integrated operation-time counter (OTC) and on/off counter Stable PWM output with fixed 2.8 V amplitude and +/-0.1% duty cycle accuracy Non-volatile memory (NVM) including UID and 20 bytes free memory for user data Internal voltage regulator (LDO) to avoid influence of instable external supply voltage Gate driver ICs NFC contactless interface compliant to ISO/IEC 18000-3 mode 1 (ISO/IEC 15963) Description Package XENSIVTM sensors Type Microcontrollers EVAL_NLM0011_DC - evaluation board demo kit This evaluation board not only enables fast demonstration of NFC-PWM configuration ICs with NLM0011 through the NFC-PWM mobile app, but also accelerates the development of the NFC-reader software. EVAL_ NLM0011_DC does not require a full system, but allows NFC configuration for existing LED driver boards. Ordering code: EVALNLM0011DCTOBO1 Ordering code NLM0011 Dual mode NFC configuration IC with PWM output and CLO function SOT23-5 NLM0011XTSA1 NLM0010 Dual mode NFC configuration IC with PWM output, without CLO function SOT23-5 NLM0010XTSA1 Packages www.infineon.com/NFC-PWM For more details on the product, click on the part number. 257 Lighting ICs For more details on the product, click on the part number. 258 20-300 V MOSFETs CIPOSTM IPM family Applications Intelligent power modules Control integrated power system (CIPOSTM) intelligent power modules (IPM) 500-950 V MOSFETs Depending on the level of integration and power to be handled, Infineon offers a variety of IPMs, with different semiconductors in different packages and different voltage and current classes. CIPOSTM IPMs are families of highly integrated, compact power modules designed to drive motors in applications ranging from home appliances to fans, pumps, and general purpose drives. WBG semiconductors Infineon's energy-efficient IPMs integrate the latest power semiconductor and control IC technology leveraging Infineon's advanced IGBTs, MOSFETs, next-generation gate driver ICs and state-of-the-art thermo-mechanical technology. CIPOSTM Micro CIPOSTM Mini CIPOSTM Maxi All MOSFET 40/100/250/500 V 250/500 V MOSFET: 250/500 V IGBT: 600 V, 3/4/6 A IGBT: 600 V, 4-30 A MOSFET: 600 V IGBT: 1200 V, 5-10 A 29 x 12 x 2.9 mm 36 x 21 x 3.1 mm 36 x 23 x 3.1 mm Compact IPM 0.1 Arms Standard IPM Motor current Performance IPM 20 Arms Gate driver ICs 7 x 8 x 0.9 mm 8 x 9 x 0.9 mm 12 x 12 x 0.9 mm Intelligent switches and input ICs Power ICs CIPOSTM Nano Discrete IGBTs CIPOSTM product overview XENSIVTM sensors Microcontrollers Key benefits Shorter time-to-market Increased reliability Reduced system design complexity Improved manufacturability Packages www.infineon.com/ipm For more details on the product, click on the part number. 259 Intelligent power modules CIPOSTM Nano Three-phase or half-bridge driver with MOSFETs CIPOSTM Nano is a family of highly integrated, ultracompact IPMs for high efficiency appliance and light industrial applications including rectifiers, converters, inverters in power management circuits and motor drives for hair dryers, air purifiers, ceiling fans, circulation pumps and ventilators. By utilizing an innovative packaging solution, these IPMs delivers a new benchmark in device size, offering up to a 60 percent smaller footprint than existing three-phase motor control power IPMs. The family is comprised of a series of fully integrated three-phase or half-bridge surface-mount motor control circuit solutions. The new alternative approach utilizes PCB copper traces to dissipate heat from the module, providing cost savings through a smaller package design and even eliminating the need for an external heat sink. Features and benefits Key benefits Key advantages Motor drive-optimized fast recovery FETs Cost savings from smaller footprint and reduced PCB space Heat sink-less operation Easy implementation of two or three-phase motor drives with half-bridge IPMs Smallest modules on the market IPMs distribute heat dissipation and enable elimination of heat sink Wide range of footprint compatible parts Same PCB footprint to address multiple application markets (100-230 VAC) Integrated bootstrap functionality Untervoltage lockout for all channels Package overview QFN 12x12 12 x 12 x 0.9 mm QFN 8x9 8 x 9 x 0.9 mm QFN 7x8 7 x 8 x 0.9 mm Key applications Small home appliances Hair driers Air purifiers Fans Motor drives Battery management Water pumps CPAP www.infineon.com/ipm For more details on the product, click on the part number. 260 20-300 V MOSFETs CIPOSTM Micro Applications Intelligent power modules Solution for low power motor drive applications 500-950 V MOSFETs CIPOSTM Micro is a family of compact IPMs for low power motor drive applications including fans, pumps, air purifiers and refrigerator compressor drives. WBG semiconductors These IPMs offer cost-effective power solutions by leveraging industry standard footprints and processes compatible with various PCB substrates. The advanced IPMs feature rugged and efficient high voltage MOSFETs and IGBTs specifically optimized for variable frequency drives with voltage ratings of 250~600 V IGBTs. The IPMs offer DC current ratings ranging up to 6 A to drive motors up to 100 W without heatsink and up to 300 W with heatsink, and are available in both through-hole and surface mount package options. Key features Key benefits Integrated bootstrap functionality Ease of design and short time-to-market Undervoltage lockout for all channels Compact package with multi lead form options available Matched propagation delay for all channels Wide range of current and voltage ratings in the same package Optimized dV/dt for loss and EMI trade-off Wide range of modules for 110 VAC or 230 VAC applications in the same footprint Advanced input filter with shoot-through protection Lower losses than similar modules in the market Discrete IGBTs Features and benefits Power ICs Separate low-side emitter pins for single- or leg-shunt current sensing 3.3 V logic compatible UL certified NTC thermistor for temperature feedback available Various lead forms available including through-hole and surface mounted DIP 29x12F 29 x 12 x 3.1 mm SOP 29x12 29 x 12 x 3.1 mm SOP 29x12F 29 x 12 x 3.1 mm Gate driver ICs DIP 29x12 29 x 12 x 3.1 mm Intelligent switches and input ICs Package overview XENSIVTM sensors Microcontrollers Key applications Fan motors Low-power general purpose drives (GPI, servo drives) Pumps Blowers Active filter (active power factor correction) for HVAC Packages www.infineon.com/ipm For more details on the product, click on the part number. 261 Intelligent power modules CIPOSTM Mini Broad range of configurations from PFC to inverter CIPOSTM Mini is a family of high efficient intelligent power modules that has the highest power density with 4 A to 30 A rated product built into single package platform. It integrates various power and control components to increase reliability, and optimize PCB size and system costs. Utilizing multiple configurations, CIPOSTM Mini IPMs are applicable to the wide applications to control variable speed drives, such as air conditioners, washing machines, refrigerators, vacuum cleaners, compressors, and industrial drives up to 3 kW. The configurations offered within the CIPOSTM Mini family are 2-phase MOSFET, 3-phase MOSFET and IGBT, integrated PFC, and 2-phase and 3-phase interleaved PFC. All options include an integrated gate driver and built-in temperature sensor. CIPOSTM Mini provides optimized performance for power applications, which need good thermal conduction and electrical isolation, but also EMI-safe control, innovative fault indication, and overload protection. The feature of Infineon's reverse conducting IGBTs or TRENCHSTOPTM IGBTs are used with a new optimized Infineon SOI gate driver IC for excellent electrical performance. Features and benefits Key features Key benefits Dual-in-line transfer molded package Current rating from 4 A to 30 A, power rating up to 3 kW High integration (bootstrap circuit, thermistor) for easy design and system space saving Optimized for home appliances and motor drives Easy and fast platform design from small to large power Rugged SOI gate driver IC technology Enhanced robustness of the advanced IGBT and gate driver IC technology Advanced protection features High power density with compact form factor UL-certified Two kinds of substrates provide cost efficient solution for home appliances Package overview DIP 36x21 36 x 21 x 3.1 mm DIP 36x21D 36 x 21 x 3.1 mm Key applications Home appliances Room air conditioners Motor control and drives Fan motors, pumps www.infineon.com/ipm For more details on the product, click on the part number. 262 20-300 V MOSFETs CIPOSTM Maxi Applications Intelligent power modules Solutions for high reliability and performance application 500-950 V MOSFETs CIPOSTM Maxi IPMs integrate various power and control components to increase reliability, optimize PCB size and system costs. It is designed to control three-phase AC motors and permanent magnet motors in variable speed drives applications, such as low-power motor drives, pumps, fan drives and active filters for HVAC (heating, ventilation, and air conditioning). The existing portfolio offers 5 A and 10 A in 1200 V class up to 1.8 kW power rating. The smallest package in 1200 V IPM class offers highest power density and best performance in its class. WBG semiconductors IM818 is the first 1200 V IPM that integrated an optimized 6-channel SOI gate driver to provide built-in dead time that prevents damage from transients. The product concept is especially adapted to power applications, which require excellent thermal performance and electrical isolation as well as meeting EMI requirements and overload protection. Key benefits Key advantages Fully isolated dual in-line molded module with DCB The smallest package size in 1200 V IPM class with high power density and best performance 1200 V TRENCHSTOPTM IGBT 4 Rugged 1200 V SOI gate driver technology Discrete IGBTs Features and benefits Enhanced robustness of gate driver technology for excellent protection Integrated booststrap functionality Adapted to high switching application with lower power loss Overcurrent shutdown Simplified design and manufacturing Power ICs Undervoltage lockout at all channels All of six switches turn-off during protection Cross-conduction prevention Programmable fault clear timing Allowable negative VS potential up to -11 V for signal transmission at VBS of 15 V Intelligent switches and input ICs Low side emitter pins accessible for all phase current monitoring (open emitter) Package overview Microcontrollers Gate driver ICs DIP36x23D 36 x 22.7 x 3.1mm Key applications XENSIVTM sensors Fan motors Low-power general purpose drives (GPI, servo drives) Pumps Active filter (active power factor correction) for HVAC HVAC outdoor fan Packages www.infineon.com/ipm For more details on the product, click on the part number. 263 Intelligent power modules CIPOSTM IPM product portfolio MOSFET based CIPOSTM IPMs Product family CIPOSTM Nano Voltage [V] Configuration RDS(on) max. [] Package Product name 40 Half-bridge 0.05 QFN 7x8 IRSM005-800MH 100 Half-bridge 0.02 QFN 7x8 IRSM005-301MH 250 Half-bridge 0.15 QFN 8x9 IRSM808-204MH 3-phase inverter 0.45. ~ 2.20 QFN 12x12 IRSM836-084MA/IRSM836-044MA IRSM836-024MA Half-bridge 0.80/1.70 QFN 8x9 IRSM807-105MH/IRSM808-105MH IRSM807-045MH 3-phase inverter 1.70 ~ 6.00 QFN 12x12 IRSM836-045MA/IRSM836-035MA/IRSM836-035MB IRSM836-025MA/IRSM836-015MA 3-phase inverter 2.40 DIP 29x12F IRSM5y5-024DA 1) * 2.40 SOP 29x12F IRSM5y5-024PA 1) * 1.30 ~ 6.00 DIP 29x12F IRSM5y5-065DA */IRSM5y5-055DA 1) * IRSM5y5-035DA */IRSM5y5-025DA 1) * IRSM5y5-015DA 1) * 1.30 ~ 6.00 SOP 29x12F IRSM5y5-065PA/IRSM5y5-055PA 1) * IRSM5y5-035PA/IRSM5y5-025PA 1) * IRSM5y5-015PA 1) * 0.33 DIP 36x21 500 CIPOSTM Micro 250 500 CIPOSTM Mini 600 2/3-phase inverter IM512-L6A/IM513-L6A IGBT based CIPOSTM IPMs Product family Voltage [V] Configuration Rated current [A] Package CIPOSTM Micro 600 3-phase inverter 3.0/4.0 DIP 29x12F IM240-S6Y1B/IM240-S6Y2B IM240-M6Y1B/IM240-M6Y2B 4.0/6.0 DIP 29x12 IM231-M6T2B/IM231-L6T2B 3.0/4.0 SOP 29x12F IM240-S6Z1B IM240-M6Z1B 4.0/6.0 SOP 29x12 IM231-M6S1B/IM231-L6S1B PFC integrated 10.0~20.0 DIP 36x21D IFCM10S60GD/IFCM10P60GD IFCM15S60GD/IFCM15P60GD IM564-X6D 3-phase inverter 4.0 ~30.0 DIP 36x21 15.0 ~30.0 DIP 36x21D IKCM15L60YD */IKCM20L60YD */IKCM30F60YA 2) * DIP 36x21D IFCM20T65GD/IFCM20U65GD CIPOSTM Mini CIPOSTM Maxi 600 Product name IGCM04F60GA/IGCM04G60GA IGCM06F60GA/IGCM06G60GA IGCM10F60GA/IKCM10H60GA/IKCM10L60GA IGCM15F60GA/ICM15L60GA */IKCM15F60GA/IKCM15H60GA IGCM20F60GA/IKCM20L60GA IKCM30F60GA 650 3-phase interleaved PFC 20 2-phase interleaved PFC 3-phase inverter 30 DIP 36x21D IFC30T65GD */IFCM30U65GD 1200 5.0/10.0 DIP 36x23D IM818-SCC/IM818-MCC 1) y = 0 (with NTC), y = 1 (without NTC) 2) y = G (with NTC), y = H (without NTC) www.infineon.com/ipm *For more information on the product, contact our product support 264 For more details on the product, click on the part number. Applications 20-300 V MOSFETs 500-950 V MOSFETs WBG semiconductors Discrete IGBTs Motor control ICs Power ICs Solutions for motor control systems in automotive, consumer and industrial applications Gate driver ICs Intelligent switches and input ICs iMOTIONTM products for industrial and consumer motor control applications iMOTIONTM products are offered in several integration levels on both hardware as well as software. The hardware integration ranges from stand-alone motor controllers up to fully integrated inverters in the SmartIPMs. On software offering, Infineon is providing full turnkey solutions as well as freely programmable modules. Using the turnkey products that are based on the patented and field proven motor control engine (MCE) and assisted by powerful tools like MCEwizard and MCEdesigner the implementation of a variable speed drive is reduced to configuring the respective motor. Infineon provides complete solution for motor control with its combined offering of iMOTIONTM together with EiceDRIVERTM gate drivers, TRENCHSTOPTM IGBTs, CoolMOSTM MOSFETs and CIPOSTM IPMs. Microcontrollers Intelligent motor control ICs Power bridges for all kind of motors in automotive and industrial applications from 100 mA up to 70 A with different feature sets scaled to your needs. Choose from our single and multi half-bridge ICs, integrated full-bridge drivers, servo and stepper motor drivers or multi-MOSFET driver. XENSIVTM sensors Automotive embedded power ICs (system-on-chip) Infineon's embedded power ICs are specifically designed to enable mechatronic motor control solutions for a range of motor control applications, where a small package form factor and a minimum number of external components are essential, including but not limited to: window lift, sunroof, wiper, fuel pump, HVAC fans, engine cooling fan, water pumps. See more on embedded power solutions in Microcontroller section, pages 320-343. Packages www.infineon.com/motor-control-ics For more details on the product, click on the part number. 265 Motor control ICs iMOTIONTM Flexible and scalable platform for motor control solutions iMOTIONTM products integrate all required hardware and software functions for the control of a variable speed drive (VSD). Infineon's field proven motion control engine (MCE) eliminates software coding from the motor control development process reducing the research and development efforts to the configuration for the respective motor. The MCE implements highly efficient control of the motor and an optional power factor correction (PFC) and integrates all necessary protections and a flexible scripting engine. Configuration options allow the use of single or leg shunt current measurement as well as sensorless or hall-based field oriented control (FOC). Assisted by powerful tools like MCEWizard and MCEDesigner it is possible to have the motor up and running in less than an hour. Integrated support for functional safety for home appliances paves the way to meet regulations in the global market. iMOTIONTM motor controller iMOTIONTM SmartIPM iMOTIONTM IMC300 ARM(R) Cortex(R)-M0 (IMC300) IMC100 Gate driver 3-phase inverter Motion control engine (MCE) Motion control engine (MCE) MCE supervision Sensors Communication Custom functions Motor control PFC control Protection Safety functions Scripting M Gate driver 3-phase inverter M Motor control PFC control Protection Safety function Scripting IMM100A/IMM100T IMC100T IMC300A Motion control engine (MCE) motor + PFC control, protection, integrated scripting engine MCE + additional MCU additional MCU available for system/application code Full 3-phase inverter system controller, gate driver and MOSFETs in compact 12x12 mm2 package up to ~80 W Features and benefits Key features Key benefits Ready-to-use and field-proven motor control solution Fastest time to market Multiple integrated protection features Easy to use - no motor control coding required Functional safety acc. IEC/UL 60730 supported High performance and energy-optimized solution Scalable - from motor to scripting, PFC and additional MCU Reduced cost of ownership due to R&D savings Various integration levels - from motor controller to SmartIPM Easy adaptation to differing application requirements iMOTIONTM controller - run with any gate driver and power stage Highest flexibility for low or high voltage drives iMOTIONTM SmartIPM - highest integration level Reduced system cost due to minimum BOM count and PCB size PC tools and evaluation kits are available to configure, test and fine-tune the drive inverter. MCEWizard SW tool to generate initial drive control parameters MCEDesigner SW tool to test, monitor and fine-tune the motor drive - including trace features for live monitoring iMOTIONTM Link Isolated debug interface to iMOTIONTM devices www.infineon.com/iMOTION www.infineon.com/iMOTION-software For more details on the product, click on the part number. 266 20-300 V MOSFETs iMOTIONTM Modular Application Design Kit Infineon`s motor control evaluation platform 500-950 V MOSFETs The iMOTIONTM Modular Application Design Kit (MADK) evaluation platform targets variable speed-drive applications up to 2kW. The platform offers a modular and scalable system solution with different control board options and a wide range of power boards. While the M1 platform provides control of a permanent magnet synchronous motor (PMSM), the M3 platform additionally includes the power factor correction (PFC) implemented as a CCM boost PFC. WBG semiconductors Using the iMOTIONTM MADK standardized platform interfaces, different control and power boards can be combined in a system that perfectly meets the requirements of the application. This modular approach allows developers maximum flexibility and scalability during evaluation and development phase at affordable costs. Get a motor running in less than 1 hour! EVAL-M1-099M-C IRMCK099 Control card EVAL-M1-CM610N3 CIPOSTM Mini-power board IKCM10H60GA ~220V/750W EVAL-M1-101TF IMC101T-F048 Control card EVAL-M1-IM818-A CIPOSTM-Maxi power board IM818-MCC ~380V/1500W Motor + PFC control boards Power boards with PFC EVAL-M3-102T IMC102T-F064 Control card EVAL-M3-CM615PN CIPOS TM mini with boost PFC IFCM15S60GD ~220V/650W EVAL-M3-302F IMC302A-F064 Control card EVAL-M3-IM564 CIPOS TM mini with boost PFC IM564-X6D ~220V/2000W XENSIVTM sensors Microcontrollers M3 Discrete IGBTs EVAL-M1-36-84A CIPOSTM Nano-power board IRSM836-084MA ~110V/80W Power ICs EVAL-M1-101T IMC101T-T038 Control card Intelligent switches and input ICs M1 Wide range of power boards Gate driver ICs Motor control boards Applications Motor control ICs Further information, datasheets and documents www.infineon.com/MADK Packages For technical assistance www.infineon.com/support For more details on the product, click on the part number. 267 Motor control ICs Single half-bridge IC Protected high current half-bridge for use in automotive and industrial applications The NovalithICTM provides a complete, low-ohmic protected half-bridge in a single package (typ. path resistance at 25C down to 10 m). It can also be combined with an additional NovalithICTM to create a H-bridge or three-phase bridge. The NovalithICTM family has the capability to switch high-frequency PWM while providing overcurrent, overvoltage and overtemperature protection. The NovalithICTM family offers cost-optimized, scalable solutions for protected high-current PWM motor drives with very restrictive board space. Due to the P-channel high-side switch the need for a charge pump is eliminated thus minimizing EMI. The latest addition to the NovalithICTM family is the IFX007T, which is optimized for industrial applications. Application example for high-current PWM motor drives Reverse polarity protection I/O WO Reset Microcontroller V DD RO VS I Voltage Q regulator VSS D GND I/O I/O I/O I/O I/O IFX007T IFX007T VS VS INH IN OUT IS SR INH OUT M GND GND IN IS SR High current H-bridge Features Basic features Protection features Diagnostic features Low quiescent current Overtemperature shutdown Overtemperature Capable for high PWM frequency Overvoltage shutdown Overvoltage Logic level input Undervoltage Current sense and status Adjustable slew rate Overcurrent Cross-current protection Product number Operating range [V] RDS(on) path (typ.) [m] ID(lim) (typ.) [A] Iq (typ.) [A] Switch time (typ.) [s] Diagnosis Protection Package Qualification IFX007T 5.5 ... 40.0 10.0 70 7 0.25 OT, OC, CS UV, OT, OC PG-TO-263-7 JESD471 www.infineon.com/novalithic CS = Current sense 268 OC = Overcurrent OT = Overtemperature UV = Undervoltage For more details on the product, click on the part number. 20-300 V MOSFETs DC motor control shield with IFX007T for Arduino Applications Motor control ICs 500-950 V MOSFETs The BLDC motor control shield is a high current motor control board compatible with Arduino and Infineon's XMC4700 Boot Kit. It is equipped with three smart IFX007T half-bridges. The BLDC motor control shield is capable to drive one BLDC motor. Alternatively, it can be used to drive one or two bidirectional DC motors (H-Bridge configuration, cascaded to support second motor) or up to three unidirectional DC motors (half-bridge configuration). The implemented integrated NovalithICTM IFX007T half-bridges can be controlled by a PWM via the IN-pin. Features Key features WBG semiconductors Capable of high frequency PWM, e.g. 30 kHz Adjustable slew rates for optimized EMI by changing external resistor Driver circuit with logic level inputs Diagnosis with current sense Discrete IGBTs Target applications Brushed DC motor control up to 250 W continuous load 24 V nominal input voltage (max. 6 V-40 V) Average motor current 30 A restricted due to PCB (IFX007T current limitation @ 55 A min.) Power ICs BLDC-SHIELD_IFX007T XENSIVTM sensors Microcontrollers Gate driver ICs Intelligent switches and input ICs DC motor control with half-bridge IFX007T Infineon's shields for Arduino are compatible with microcontroller boards using the Arduino-compatible form factor, e.g. Infineon's XMCTM microcontroller kits. Ordering code: BLDCSHIELDIFX007TTOBO1 Packages www.infineon.com/shields-for-arduino www.infineon.com/makers www.infineon.com/novalithIC For more details on the product, click on the part number. 269 Motor control ICs Multi half-bridge ICs Extensive offering ranging from two-fold half-bridge ICs to twelve-fold half-bridge ICs The TLE94xyz are protected half-bridge drivers designed for 12 V motion control applications such as small DC motors for heating, ventilation and air conditioning (HVAC), as well as automotive mirror adjustment and fold. The family offers three-, four-, six-, eight-, ten-, and twelve-fold integrated half-bridge driver. All devices can drive DC motor loads up to 0.9 A per output or the outputs can be used stand-alone or combined to increase driving capability up to 3.6 A. They provide diagnosis of short circuit, open load, power supply failure and overtemperature for each halfbridge to ensure safe operation in HVAC or other systems. The TLE94xyz offers enhanced EMC performance, which in combination with the low quiescent current and a small package makes the product attractive for a wide range of 12 V automotive and industrial applications. Infineon's portfolio of multi half-bridge ICs Block diagram TLE94112EL VDD Direct interface Interface Undervoltage and overvoltage monitor VS2 Charge pump SPI EN Number of motors VS1 12-fold half-bridge driver SPI interface Microcontroller Bias and monitor PWM generator CSN SCLK 1 Motor 2 Motors 2 Motors 3 Motors 4 Motors 5 Motors 6 Motors TLE4207G DSO-14 TLE94003EP TSDSO-14 TLE94103EP TSDSO-14 TLE94106ES TSDSO-14 TLE94108EL SSOP-24 TLE94110EL SSOP-24 TLE94112EL SSOP-24 TLE94004EP TSDSO-14 TLE94104EP TSDSO-14 SDI 12x driver stage Open-load detection Number of motors Logic control and latch SPI interface High-side driver Overtemp. detection SDO TLE8444SL SSOP-24 Overload detection Power driver Open-load detection Error detection Overload detection Temperature sensor Low-side driver Overtemp. detection OUT1 OUT2 OUT3 OUT4 OUT5 OUT6 OUT7 OUT8 OUT9 OUT10 OUT11 OUT12 GND GND GND GND Features and benefits Key features and benefits Three-, four-, six-, eight-, ten-, and twelve-fold half-bridges with integrated output stages and PWM 16-bit SPI or direct inputs for control and diagnosis Voltage supply range: 5.5- 20 V Adjustable open load threshold for two outputs Variable driving schemes for up to Key applications 12 V automotive and industrial applications Flap motors in HVAC systems Mirror adjustment and fold Small DC motors ( 0.9 A/output) Bistable relays Bipolar stepper motors in full-step and half-step mode www.infineon.com/multihalfbridges For more details on the product, click on the part number. 270 IL(NOM) [A] IL(lim) [A] Iq [A] VS(OP) [V] Protection Diagnostic interface VCE(sat)/ RDS(on) [m] Highlights Package TLE94003EP 3 x half-bridge 3 x 0.30 3 x 0.90 0.6 5.5 to 20 OC, OT, VS, UV/OV Error flag TLE94xyz family concept + small package TSDSO-14-EP TLE94103EP 3 x half-bridge 3 x 0.30 3 x 0.90 0.6 5.5 to 20 OC, OT, OL, VS, UV/OV 16-bit SPI TLE94xyz family concept + small package TSDSO-14-EP TLE94004EP 4 x half-bridge 4 x 0.30 4 x 0.90 0.6 5.5 to 20 OC, OT, VS, UV/OV Error flag TLE94xyz family concept + small package TSDSO-14-EP TLE94104EP 4 x half-bridge 4 x 0.30 4 x 0.90 0.6 5.5 to 20 OC, OT, OL, VS, UV/OV 16-bit SPI TLE94xyz family concept + small package TSDSO-14-EP TLE94106ES 6 x half-bridge 6 x 0.30 6 x 0.90 0.6 5.5 to 20 OC, OT, OL, VS, UV/OV 16-bit SPI TLE94xyz family concept + backwards compatible to TLE84106EL TLE94108EL 8 x half-bridge 8 x 0.30 8 x 0.90 0.6 5.5 to 20 OC, OT, OL, VS, UV/OV 16-bit SPI TLE94xyz family concept TLE94110EL 10 x half-bridge 10 x 0.30 10 x 0.90 0.6 5.5 to 20 OC, OT, OL, VS, UV/OV 16-bit SPI TLE94xyz family concept + backwards compatible to TLE84110 TLE94112EL 12 x half-bridge 12 x 0.30 12 x 0.90 0.6 5.5 to 20 OC, OT, OL, VS, UV/OV 16-bit SPI TLE94xyz family concept + 12 outputs in one package SSOP-24 TLE4207G 2 x half-bridge 2 x 0.80 2 x 1.50 20 8 to 18 OC, OT, VS, UV/OV Error detection DSO-14 TLE8444SL 4 x half-bridge 4 x 0.50 4 x 0.90 1 8 to 18 OC, OT, OL, VS, UV/OV Status flag Open-load detection in ON-state SSOP-24 Status flag 850/switch Applications 500-950 V MOSFETs Config. TSDSO-24 SSOP-24 SSOP-24 WBG semiconductors Product name 20-300 V MOSFETs Motor control ICs DC motor shield with TLE94112EL for Arduino Discrete IGBTs The DC motor shield is a small evaluation board equipped withTLE94112EL for use with Arduino. The TLE94112EL is capable to drive up to 6 small DC motors in parallel mode or up to 11 DC motors in cascaded mode. All outputs can drive up to 0.9 A. The outputs can be used stand-alone or combined to increase driving capability up to 3.6 A. Features Power ICs Key features Driver with 12 half-bridge outputs to drive DC motors, resistive or inductive loads Driver is protected against overtemperature, overcurrent, overvoltage, undervoltage and enables diagnosis of overcurrent, overvoltage, undervoltage SPI interface with zero clock diagnosis Intelligent switches and input ICs Enhanced EMC performance Integrated PWM generator with three different frequencies (80 Hz, 100 Hz, 200 Hz) XENSIVTM sensors Microcontrollers Gate driver ICs Target applications Multi-motor applications DC motors and voltage controlled bipolar stepper motors Toys HVAC systems OC = Overcurrent OT = Overtemperature OL = Openload UV = Undervoltage OV = Overvoltage Packages www.infineon.com/shields-for-arduino www.infineon.com/makers For more details on the product, click on the part number. 271 Motor control ICs Integrated full-bridge driver General purpose 6 A H-bridges IFX9201SG and IFX9202ED are general purpose 6 A H-bridges designed for the control of small DC motors and inductive loads. The outputs can be pulse width modulated at frequencies up to 20 kHz, which enables operation above the human sonic range by means of PWM/DIR control. While the signal at the DIR input defines the direction of the DC motor, the PWM signal controls the duty cycle. For load currents above the current limitation threshold (8 A typically), the H-bridges switch into chopper current limitation mode. Applications examples VBat VS < 40 V 100 F Application example H-bridge with SPI interface 100 nF VS 3.3 or 5 V Digital supply VSO VBat VS < 40 V 100 F VS 3.3 or 5 V Digital supply IFX9201SG Application example H-bridge with error flag 100 nF IFX9201SG VSO OUT1 DIS PWM DIR CSN SCK SI SO Microcontroller OUT1 DIS PWM DIR CSN SCK SI SO M OUT2 < 33 nF < 33 nF Microcontroller GND M OUT2 < 33 nF GND 2-phase stepper motor 2-phase stepper motor Step < 33 nF Step IFX9201 PWM_1 Direction (DIR) Direction (DIR) Disable (DIS) Disable (DIS) OUT1_1 OUT1_2 IFX9202ED OUT2_1 XMC1300 XMC1300 IFX9201 OUT2_2 PWM_2 PWM_2 PWM_1 PWM_1 + - PWM_2 + - + - GND GND + - + - + - + - + - Features Key features Up to nominal 36 V supply voltage Short circuit, overtemperature protection and undervoltage shutdown Detailed SPI diagnosis or simple error flag Simple design with few external components Small and robust DSO-12-17 (IFX9201SG) and DSO-36-72 (IFX9202ED) packages Product number Operating voltage Current limit (min.) [A] Quiescent current (typ.) [A] Operating range [V] RDS(on) (typ./switch) [m] Package RthJC (max.) [K/W] IFX9201SG 4.5 to 36 V 6.0 10.0 70 7 PG-DSO-12 (power) 2.0 IFX9202SG * 4.5 to 36 V 2 x 6.0 A 19.0 5 to 36 2 x 100 DSO-36 2 x 0.5 www.infineon.com/dc-motor-bridges *For more information on the product, contact our product support 272 For more details on the product, click on the part number. 20-300 V MOSFETs H-BRIDGE KIT 2GO with IFX9201SG 500-950 V MOSFETs Build your own DC motor control with the H-bridge Kit 2GO, a ready-to-use evaluation kit. It is fully populated with all electronic components equipped with the H-bridge IFX9201 combined with XMC1100 microcontroller based on Arm(R) Cortex(R)-M0 CPU. It is designed for the control of DC motors or other inductive loads up to 6 A or up to 36 V of supply. Discrete IGBTs WBG semiconductors Target applications DC motor control for industrial applications Home and building automation Power tools battery management Industrial robotic applications Electric toys applications Ordering code: HBRIDGEKIT2GOTOBO1 KIT_XMC1300_IFX9201 Stepper motor control shield with IFX9201SG and XMC1300 for Arduino Intelligent switches and input ICs Power ICs The stepper motor control shield from Infineon is one of the first high current stepper motor control boards being compatible to Arduino as well as to Infineon's XMC1100 boot kit. The stepper motor control shield is capable to drive the two coils in a stepper motors featuring dual-half bridge configuration. The implemented integrated IFX9201 half-bridges can be controlled by a STEP-signal via the STEP pin. Interfacing to a microcontroller is made easy by the integrated XMC1300 microcontroller that holds the peripherals to allow high-speed current control. Microstepping of the stepper motor can be achieved using the internal comparators, while operational amplifiers are installed to adapt the motor current sense signal to the microcontroller's input levels. Key features Key benefits Compatible with microcontroller boards using the Arduino form factor, e.g. Infineon's XMCTM microcontroller kits Fast and inexpensive prototyping of stepper motor control Adjustable slew rates for optimized EMI by changing external resistor Driver circuit with logic level inputs Gate driver ICs Features and benefits Capable of high frequency PWM, e.g. 30 kHz Applications Motor control ICs Simple testing of microstepping algorithms Diagnose pin to allow hardware feedback during development Overtemperature shutdown with latch behavior and undervoltage shutdown of the power section Microcontrollers Diagnosis with current sense XENSIVTM sensors Target applications Stepper motors up to 5 A phase current 24 V nominal input voltage for the power stage Average motor current 3 A without additional cooling effort, 5 A possible with proper cooling Ordering code: KITXMC1300IFX9201TOBO1 Packages www.infineon.com/dc-motor-bridges For more details on the product, click on the part number. 273 Motor control ICs Stepper motor driver Cost-efficient, durable and reliable The TLE8444SL is a protected quad-half-bridge IC targeted towards automotive and industrial motion control applications. It is a monolithic die based on Infineon's smart mixed technology SPT which combines bipolar and CMOS control circuitry with DMOS power devices. DC Motors can be driven in forward (cw), reverse (ccw), brake and high impedance modes where as stepper motors can be driven in no-current, negative/positive output current modes. These various modes can easily be achieved via standard parallel interface of the device to a microcontroller. The PG-SSOP-24-7 package is advantageous as it saves PCB board space and costs. The integrated short circuit and overtemperature protection as well as its built-in diagnosis features such as over- and undervoltage lockout and open load detection improve system reliability and performance. Features Benefits Applications Unipolar or bipolar loads Stepper motors in automotive and industrial applications (e.g. idle speed control for small cars or motor bike) Suited for fast switching applications (PWM capability up to 10kHz) Easy failure detection Low impact on battery lifetime Implementation of thermal shutdown extends IC lifetime Allows motor peak currents up to 0.9a Broken wire connections easily detected Designed for automotive and industrial applications Product number IL(NOM) TLE8444SL 4x0.50 CS = Current sense IL(lim) 4x0.90 Iq [A] 1 OC = Overcurrent VS(op) 1-18 Step operations Full to half-step OT = Overtemperature Protection SC, OT, OV, UV, OL SC = Short circuit Diagnostic interface Status flag Highlights Package Open-load detection in on-state UV = Undervoltage SSOP-24-7 OL = Open-load www.infineon.com/dc-motor-bridges For more details on the product, click on the part number. 274 Applications 20-300 V MOSFETs 500-950 V MOSFETs WBG semiconductors Discrete IGBTs Power ICs Infineon support for power ICs Microcontrollers Gate driver ICs www.infineon.com/industrial-profet www.infineon.com/novalithic www.infineon.com/dc-motor-bridges www.infineon.com/shields-for-arduino www.infineon.com/ipol www.infineon.com/analog-ipol www.infineon.com/xdp www.infineon.com/ipm www.infineon.com/madk XENSIVTM sensors Further information, datasheets and documents www.infineon.com/acdc www.infineon.com/coolset www.infineon.com/integrated-powerstages www.infineon.com/digital-controller www.infineon.com/lighting-ics www.infineon.com/isoface www.infineon.com/eicedriver www.infineon.com/industrial-transceivers www.infineon.com/industrial-voltage-regulators www.infineon.com/industrial-DC-DC-converters Intelligent switches and input ICs Useful links and helpful information Packages Simulation For more details on the product, click on the part number. 275 Intelligent power switches and modules ISOFACETM isolated industrial interface HITFETTM protected low-side switches Industrial PROFETTM protected high-side switches Infineon support for intelligent switches and input ICs For more details on the product, click on the part number. 276 Packages For more details on the product, click on the part number. 277 XENSIVTM sensors Microcontrollers Gate driver ICs Intelligent switches and input ICs Power ICs Discrete IGBTs WBG semiconductors 500-950 V MOSFETs 20-300 V MOSFETs Applications ISOFACETM ISOFACETM isolated industrial interface Output switches and digital input ICs offering unmatched system uptime, reliability and shortened product launch time by 50% Our ISOFACETM product family provides robust and intelligent galvanic isolation for industrial control applications such as programmable logic controllers, sensor input modules, control panels and general control equipment. The output switches are compact in design, enabling robust and reliable operation at low system cost. Ideal for high-speed applications, digital input ICs are equally robust, reliable and compact - also offering superior EMI robustness and setting a new standard in diagnostics. ISOFACETM galvanic-isolated 8-channel output switches The ISO1H81xG product family integrates: Robust galvanic isolation (UL508 and EN 61131-2 certified) to protect the 3.3 V/5 V control domain of an industrial control system from the harsh 24 V process side 8-channel high-side power-switching capabilities of up to 1.2 A per channel Active current limitation and overtemperature protection Common diagnostic feedback for overtemperature and for Vbb undervoltage Isolated output switch block diagram Isolated output switches V bb V CC V CC V bb V CC Control unit WR Parallel or Transmission CS Microcontroller serial D0 i.e. interface XMC1xxx D7 XMC4xxx OUT0 Transmission DIS Control and protection unit OUT1 Logic DIAG DIAG OUT7 GND GND CC ISO1H81xG GND BB Features and benefits Key features Key benefits Integrated galvanic isolation (500 V) Robust and reliable Eight channels (0.6 or 1.2 A, each) Compact system solution Inductive load switching Lower system cost Diagnostic feedback (overtemperature, overload) System status feedback Serial and parallel MCU interface Directly interfacing with all MPUs and MCUs www.infineon.com/isoface For more details on the product, click on the part number. 278 20-300 V MOSFETs ISOFACETM galvanic-isolated digital input ICs IN7 12 k GNDFI 2 k WBG semiconductors I0H I0L ERR Digital filter I7H I7L Sync CS Logic 2 k Deserialize IN0 12 k DC ENA Serialize 8 sensors V FI VCC TS WB Parallel or serial interface Digital filter Microcontroller e.g. XE166 Discrete IGBTs 330 nF Galvanic-isolated digital input ICs SW1 S W2 Vbb 500-950 V MOSFETs The ISO1I81xT digital input IC family is an intelligent system solution offering robust galvanic isolation between the microcontroller on the "control side" and the 24 V factory floor environment, frequently referred to as the process side. Digital input switch block diagram GND GNDBB Applications ISOFACETM ISO1I813T Key benefits Integrated galvanic isolation (500 V) Robust and reliable Eight channels (IEC type 1/2/3) Compact system solution Up to 500 kHz sampling speed High-speed applications Programmable input filters Superior EMI robustness Channel-specific diagnostics (wire-break, undervoltage) System status feedback Intelligent switches and input ICs Key features Power ICs Features and benefits Valuable maintenance support Gate driver ICs XMC4800 automation board V2 Key features Complete automation kit gateway Combined MCU with EtherCAT(R) slave application Isolated interfaces w/ diagnose Ethernet connectivity with software examples available Full software DAVETM examples XENSIVTM sensors Orderable part number: KITXMC48AUTBASEV2TOBO1 Microcontrollers Featured products XMC4800-E196K2048 -Arm(R) Cortex(R)-M4 microcontroller ISO2H823V2.5- 24 V 8-channel isolated output ISO1I813T - 24 V 8-channel isolated input SLS 32AIA020A4 USON10 - OPTIGATM Trust E - embedded security solution TLE6250GV33 - Infineon CAN transceiver IFX54441LDV - Infineon voltage regulator Packages www.infineon.com/isoface For more details on the product, click on the part number. 279 ISOFACETM product portfolio ISOFACETM product portfolio ISOFACETM output switches Product overview ISO1H801G Vbb operational range: 11 V to 35 V Switch Safety features Diagnostics feedback ISO1H812G ISO1H815G ISO1H816G Max. continuous load current per channel 0.6 A 0.6 A 0.6 A 1.2 A 1.2 A Load current increase by using outputs in parallel Inductive clamping energy per channel: 1 Joule Microcontroller interface ISO1H811G Type Parallel Parallel Serial Parallel Serial Nominal voltages 5V 3.3 V/5 V 3.3 V/5 V 3.3 V/5 V 3.3 V/5 V Isolation voltage: VISO = 500V UL508 and EN 61131-2 certified Active current limitation Thermal shutdown Common output disable pin Overtemperature Vbb undervoltage Package DSO-36 (16x14 mm) Ordering code ISO1H801GAUMA1 ISO1H811GAUMA1 ISO1H812GAUMA1 ISO1H815GAUMA1 ISO1H816GAUMA1 ISOFACETM digital input IC Product overview Input characteristics ISO1I811T ISO1I813T IEC type: I, II, III Input status LED Max. sampling frequency 125 kHz 500 kHz Deglitching filter setting Hard wired Software, individual per channel Synchronous data acquisition - 3.3 V/5 V Serial and parallel 500V isolation voltage Wire break, channel-specific - Vbb undervoltage - Support for external Vbb supply - Package TSSOP-48 (8x12.5 mm) ISO1I811TXUMA1 ISO1I813TXUMA1 C interface Safety features Ordering code www.infineon.com/isoface For more details on the product, click on the part number. 280 20-300 V MOSFETs HITFETTM Protected low-side switches Load CVDD2) RSTATUS Vehicle CAN bus Microcontroller VDD VDD ENABLE OUTPUT OUT IN OUTPUT (PWM) STATUS INPUT (feedback)/ OUTPUT (reset) SRP GND GND CSRP1) WBG semiconductors IN Voltage OUT regulator 5V Key applications Industrial automation * Programmable logic controller (PLC) * * Digital I/O modules Building and home management All kind of solenoid or valve driving Power modules Solar power inverters Discrete IGBTs VBatt 500-950 V MOSFETs HITFETTM stands for highly-integrated temperature-protected MOSFET. These well-established low-side switches offer a compelling feature set with protection against overtemperature, short circuit and overload conditions as well as ESD robustness. The HITFETTM+ family is the new generation based on a new technology, enabling a significant shrink compared to the existing HITFETTM portfolio (up to 50 percent shrink). This novel generation consists of standard and fully-featured protected low-side switches (11 to 125 m) in the TO-252-3 DPAK/TO-252-5 DPAK and TDSO-8 packages. HITFETTM and HITFETTM+ devices address a wide range of applications including resistive, inductive and resistive loads. Application diagramm example for HITFETTM Applications Low-side switches RSRP BTF3xxxEJ Power ICs 1) CSRP-GND < 100 pF - maximum permittet parasitic capacitance at the SRP-pin 2) Filter capacitor on supply, recommended 100 nF Key features Key benefits Low-side switches with integrated protection features High design flexibility with scalable RDS(on) and package Scalable in RDS(on) ranges from 490 m down to 11 m Driving applications with high switching speed requirements up to 25 kHz (e.g. valve, solenoid) Thermal shutdown with auto restart or latch behavior Status feedback via Increased input current (HITFETTM 2nd gen.) Digital readout via SRP (BTF3050TE) Via status pin (BTF3xxxEJ) Easy to design-in Choice of packages to match individual application needs Gate driver ICs Adjustable slew rate control (BTFxxx) Intelligent switches and input ICs Features and benefits Low-side switch shield with BTF3050TE for Arduino Microcontrollers Featured products: Three BTF3050TE low-side switches of the HITFETTM+ family Combatible with: Microcontroller boards using the Arduino form factor and the corresponding Infineon's kits with Arm(R) powered XMCTM microcontroller Orderable part number: SHIELDBTF3050TETOBO1 BTT3018EJ DEMOBOARD XENSIVTM sensors Featured products: One single-channel low-side switch of BTT3018EJ Combatible with: Can be used as single stand and is also pin-compatible with microcontroller boards using the Arduino form factor (e.g. XMC1100 Boot Kit, Arduino Uno) Orderable part number: BTT3018EJDEMOBOARDTOBO1 *See block diagram on page 278 * * See block diagram on page 279 Packages www.infineon.com/hitfet www.infineon.com/shields-for-arduino For more details on the product, click on the part number. 281 High-side switches Industrial PROFETTM Protected high-side switches The well-established high-side switch Industrial PROFETTM products were designed for targeting a variety of industrial applications which include all types of resistive, inductive and capacitive loads. Due to their outstanding energy robustness, they are perfectly suitable for switching even higher inductive loads and driving relays. Their main application areas include high-voltage applications (VBAT up to 60 V), high-speed PWM applications (up to 1 kHz) and they are most notably capable of switching higher inductances smoothly. Industrial PROFETTM can be applied to drive any kind of sensor units, indicators, displays, LEDs, relays, valves and magnetic actuators or replace electromechanical relays, fuses and discrete circuits. Industrial PROFETTM products are also the perfect match for applications with long wiring or any other kind of inductive loads or applications with space constraints. PROFETTM typical block diagram Key applications Industrial automation Programmable logic controller (PLC) Digital I/O modules Robotics Building and home automation Solar applications Wind energy systems Smart grid Motor control and drives Power supplies VS Bias supervision Overvoltage protection Current limiter Logic Gate control circuit IN ESD protection OUT ST Temperature sensore GND Features and benefits Key features Key benefits Right fit for digital output switches, motor or robot control, protected switching of decentralized loads like sensors or auxiliary supply Small system form factor No/little downtime of system in operation Outstanding robustness and reliability as required by industrial mission profiles Low heating up of a system Thermally optimized products with low RDS(on) to deal with the high ambient temperatures and limited or even no cooling System cost saving by built-in protection and tailored featureset Reduced system maintenance efforts by providing optimized diagnostics Diagnosis and protection for safe system operation Small and compact design for higher integration and applications with space constraints PLC - programmable logic controller digital output modules Control level Field level Protection diagnosis Microcontroller or bus ASIC Switch Load 1 Switch Load 2 Isolation Multichannel switch Protection diagnosis Load 3 Load 4 Industrial PROFETTM Protected high-side switches PROFETTM as actuators typically address I/O modules supplying nominal currents of 2 A or 0.5 A. However PROFET TM portfolio as well provides devices also for lower and higher currents. PROFET TM parts are suitable for switching resistive, capacitive and, by featuring high EAS, inductive loads. Corresponding PROFETTM evaluation boards are available on request. www.infineon.com/industrial-profet For more details on the product, click on the part number. 282 Applications 20-300 V MOSFETs 500-950 V MOSFETs WBG semiconductors Discrete IGBTs 4-channel 7A ITS428L2 7 A, 60 m, TO-252-5 3A ITS4060S-SJ-N, ISP772T 3.1 A, 60 m DSO-8 2A...3A ITS4100S-SJ-N, ISP762T 2.4 A, 100 m, DSO-8 1A...2A ITS4200S-ME-P, ITS4142N 1.4 A, 200 m, SOT223 ITS4040D-EP-D 2.6 A, 40 m, TSDSO14 ITS4075Q-EP-D 2.6 A, 75 m, TSDSO14 ISP752T 1.3 A, 200 m, DSO-8 ITS5215L 2 A, 90 m, DSO-12 ITS724G 2 A, 90 m, DSO-20 8-channel Power ICs 2-channel Intelligent switches and input ICs 1-channel ITS716G 1 A, 140 m, DSO-20 ITS4200S-SJ-D, ISP752R 1.2 A, 200 m, DSO-8 Gate driver ICs Load current Typical, per channel ITS711L1 1 A, 200 m, DSO-20 ITS4200S-ME-N, ISP452 0.7 A, 200 m, SOT223 ITS4090Q-EP-D 0.7 A, 90 m, TSDSO14 ITS4200S-ME-O, ITS4141N 0.7 A, 200 m, SOT223 ITS4130Q-EP-D 0.65 A, 130 m, TSDSO14 ITS42008-SB-D, ITS4880R 0.6 A, 200 m, DSO-36 Microcontrollers 0.5 A ... 1 A ITS4141D 0.5 A, 200 m, TO-252-5 < 0.5 A ITS4300S-SJ-D, ISP742RI 0.4 A, 300 m, DSO-8 ITS42K5D-LD-F 0.25 A, 2.5, TSON-10 XENSIVTM sensors ITS41k0S-ME-N, ITS4140N 0.2 A, 1, SOT223 = With diagnosis Packages www.infineon.com/industrial-profet For more details on the product, click on the part number. 283 HITFETTM and PROFETTM portfolio HITFETTM product portfolio Product type BTS3011TE BTT3018EJ BTS3035EJ BTS3035TF BTF3035EJ BTF3050TE BTS3050EJ BTS3050TF BTF3050EJ BTS3060TF BTS3080EJ BTS3080TF BTF3080EJ BTS3125EJ BTS3125TF BTF3125EJ BTS3018TC BTS141TC BTS3028SDL BTS3028SDR BTS133TC BTS3046SDL BTS3046SDR BTS117TC BTS3104SDL BTS3104SDR AUIPS2041L AUIPS2051L AUIPS2052G BTS3408G BSP75N Product Channels RDS(on) family @ 25C [mW] HITFETTM+ HITFETTM+ HITFETTM+ HITFETTM+ HITFETTM+ HITFETTM+ HITFETTM+ HITFETTM+ HITFETTM+ HITFETTM+ HITFETTM+ HITFETTM+ HITFETTM+ HITFETTM+ HITFETTM+ HITFETTM+ HITFETTM HITFETTM HITFETTM HITFETTM HITFETTM HITFETTM HITFETTM HITFETTM HITFETTM HITFETTM HITFETTM HITFETTM HITFETTM HITFETTM HITFETTM 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 2 2 1 10.7 16 28 30 28 40 40 44 40 50 64 69 64 100 108 100 14 25 28 28 40 46 46 80 104 104 100 250 250 480 490 Nominal load current [A] EAS [mJ] 10 7.0 5.00 5.00 5.00 3.00 4.00 4.00 4.00 3.00 3.00 3.00 3.00 2.00 2.00 2.00 6.00 5.10 5.00 5.00 3.80 3.60 3.60 3.50 2.00 2.00 1.40 0.90 0.90 0.55 0.70 300 @ 5 A 150 105 @ 5 A 106 @ 5 A 95 @ 5 A 120 @ 3 A 62 @ 3 A 64 @ 4 A 62 @ 4 A 55 @ 3 A 35 @ 3 A 38 @ 3 A 33 @ 3 A 30 @ 2 A 24 @ 2 A 23 @ 2 A 1900 4000 350 350 2000 140 140 1000 50 50 800 550 Operating IL(SD) voltage range (typ) [V] [A] up to 28 up to 36 up to 31 up to 31 up to 32 up to 28 up to 31 up to 31 up to 32 up to 35 up to 31 up to 31 up to 32 up to 31 up to 31 up to 32 up to 36 up to 36 up to 36 up to 36 up to 36 up to 36 up to 36 up to 36 up to 36 up to 36 up to 35 up to 35 up to 35 up to 36 up to 36 - - - - - - - - - - - - - - - - - - - - - - - - - - 5.00 1.80 1.80 - - IL(lim) (typ) [A] 35 45 20.00 20.00 14.00 8.00 15.00 15.00 10.00 10.50 10.00 10.00 7.00 7.00 7.00 5.00 30.00 25.00 18.00 18.00 21.00 10.00 10.00 7.00 6.00 6.00 - - - 1.00 1.00 IL(lim)_TRIG- Diagnosis Package Status pin Status pin Status pin - Status pin Through SRP pin Status pin - Status pin - Status pin - Status pin Status pin - Status pin Through input pin Through input pin Through input pin Through input pin Through input pin Through input pin Through input pin Through input pin Through input pin Through input pin - - - Through input pin Through input pin TO-252-5 (DPAK 5-leg) TDSO-8 TDSO-8 TO-252-3 (DPAK 3-leg) TDSO-8 TO-252-5 (DPAK 5-leg) TDSO-8 TO-252-3 (DPAK 3-leg) TDSO-8 TO-252-3 (DPAK 3-leg) TDSO-8 TO-252-3 (DPAK 3-leg) TDSO-8 TDSO-8 TO-252-3 (DPAK 3-leg) TDSO-8 TO-263-3-2 (TO-220-3 (SMD)) TO-263-3-2 (TO-220-3 (SMD)) TO-252-3 (DPAK 3-leg) TO-252-3 (DPAK 3-leg) TO-263-3-2 (TO-220-3 (SMD)) TO-252-3 (DPAK 3-leg) TO-252-3 (DPAK 3-leg) TO-263-3-2 (TO-220-3 (SMD)) TO-252-3 (DPAK 3-leg) TO-252-3 (DPAK 3-leg) SOT-223 SOT-223 SO-8 (DSO-8) DSO-8 SOT-223 GER (typ) [A] 70 - - - 41.00 30.00 - - 29.00 - - - 18.00 - - 12.00 - - - - - - - - - - - - - - - Industrial PROFETTM product portfolio Product ITS4060S-SJ-N ISP772T ITS428L2 ITS4100S-SJ-N ISP762T ITS4200S-ME-O ITS4141N ITS4141D ITS4200S-ME-P ITS4142N ITS4200S-ME-N ISP452 ITS4200S-SJ-D ISP752R ISP752T ITS4300S-SJ-D ISP742RI ITS41K0S-ME-N ITS4140N ITS4040D-EP-D ITS5215L ITS42K5D-LD-F ITS4075Q-EP-D ITS4090Q-EP-D ITS724G ITS4130Q-EP-D ITS716G ITS711L1 ITS42008-SB-D ITS4880R Number of channels 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 2 2 2 4 4 4 4 4 4 8 8 RDS(on) (typ) [m] 50 50 60 70 70 150 150 150 150 150 160 160 150 200 200 250 350 1000 1000 40 90 2500 75 100 90 130 140 200 200 200 Nominal load current [A] 3.10 2.60 7.00 2.40 2.00 1.10 1.10 1.10 2.20 2.20 1.20 1.20 1.70 1.70 1.70 0.80 0.80 0.55 0.55 2 x 2.00 2 x 2.00 2 x 0.25 4 x 2.00 4 x 0.50 4 x 2.00 4 x 0.50 4 x 1.00 4 x 1.00 8 x 0.60 8 x 0.60 EAS [mJ] 900 @ 1.50 A 900 @ 1.50 A 190 @ 7.00 A 870 @ 1.00 A 870 @ 1.00 A 700 @ 0.50 A 700 @ 0.50 A 12,000 @ 0.50 A 160 @ 1.00 A 160 @ 1.00 A 500 @ 0.50 A 500 @ 0.50 A 125 @ 1.00 A 125 @ 1.00 A 125 @ 1.00 A 800 @ 0.30 A 800 @ 0.30 A 1000 @ 0.15 A 1000 @ 0.15 A 185 * 178 @ 3.50 A Freewheeling 60 * 410 * 120 @ 3.30 A 380 * 76 @ 2.30 A 150 @ 1.90 A 10,000 @ 625 mA 10,000 @ 625 mA Recommended operating voltage range [V] 5.00 ... 34.00 5.00 ... 34.00 4.75 ... 41.00 5.00 ... 34.00 5.00 ... 34.00 11.00 ... 45.00 12.00 ... 45.00 12.00 ... 45.00 11.00 ... 45.00 12.00 ... 45.00 5.00 ... 34.00 5.00 ... 34.00 6.00 ... 52.00 6.00 ... 52.00 6.00 ... 52.00 5.00 ... 34.00 5.00 ... 34.00 4.90 ... 60.00 4.90 ... 60.00 5.00 ... 45.00 5.50 ... 40.00 4.50 ... 45.00 5.00 ... 45.00 5.00 ... 45.00 5.50 ... 40.00 5.00 ... 45.00 5.50 ... 40.00 5.00 ... 35.00 11.00 ... 45.00 11.00 ... 45.00 IL(SC) (typ) [A] Diagnosis Package 17.0 17.0 22.0 10.0 10.0 1.4 1.4 1.4 3.0 3.0 1.5 1.5 6.5 6.5 6.5 1.2 1.2 0.9 0.9 4.1 15.0 0.6 4.1 1.5 15.0 1.25 9.0 7.5 3.0 3.0 n/a n/a Digital n/a n/a n/a n/a n/a n/a n/a n/a n/a Digital Digital n/a Digital Digital, inverted n/a n/a Digital Digital Digital Digital Digital Digital Digital Digital Digital Digital Digital DSO-8 DSO-8 TO252-5 PG-DSO-8 DSO-8 SOT-223-4 SOT-223-4 TO-252-5 SOT-223-4 SOT-223-4 DSO-8 SOT-223-4 DSO-8 DSO-8 DSO-8 DSO-8 DSO-8 SOT-223-4 SOT-223-4 TSDSO-14 DSO-12 TSON-10 TSDSO-14 TSDSO-14 DSO-20 TSDSO-14 DSO-20 DSO-20 DSO-36 DSO-36 www.infineon.com/hitfet www.infineon.com/industrial-profet For more details on the product, click on the part number. 284 Applications 20-300 V MOSFETs 500-950 V MOSFETs WBG semiconductors Discrete IGBTs Power ICs Infineon support for intelligent switches and input ICs Intelligent switches and input ICs Useful links and helpful information Packages XENSIVTM sensors Microcontrollers Gate driver ICs Further information, datasheets and documents www.infineon.com/isoface www.infineon.com/hitfet www.infineon.com/industrial-profet www.infineon.com/shields-for-arduino For more details on the product, click on the part number. 285 Gate driver ICs EiceDRIVERTM 1EDN EiceDRIVERTM 2EDN EiceDRIVERTM 2EDi product GaN EiceDRIVERTM 650 V level shift SOI and JI gate driver for IGBTs and MOSFETs 200 V level shift SOI and JI gate driver for MOSFET Non-isolated low-side gate driver ICs EiceDRIVERTM Enhanced 1ED-F2 and 2ED-F2 EiceDRIVERTM 1ED Compact EiceDRIVERTM Enhanced 1ED34xx (X3 analog) and 1ED38xx (X3 digital) EiceDRIVERTM 1EDS-SRC Industrial and general purpose gate driver ICs Product portfolio Nomenclature Gate driver selection tool For more details on the product, click on the part number. 286 Packages For more details on the product, click on the part number. 287 XENSIVTM sensors Microcontrollers Gate driver ICs Intelligent switches and input ICs Power ICs Discrete IGBTs WBG semiconductors 500-950 V MOSFETs 20-300 V MOSFETs Applications EiceDRIVERTM overview Gate driver ICs EiceDRIVERTM gate driver ICs for MOSFETs, IGBTs, SiC MOSFETs and GaN HEMTs Every switch needs a driver - the right driver makes a difference. Power electronics applications employ power device switches. And power device switches require optimum gate driver solutions. That is why we offer more than 500 EiceDRIVERTM gate driver IC solutions suitable for any power switch, and for any application. EiceDRIVERTM Gate Driver Selection By configuration Low side By isolation Isolated Non isolated High and low side Full bridge Driver boards By application High side Level shift Half bridge EiceDRIVERTM gate driver ICs provide a wide range of typical output current options, from 0.1-A up to 10-A. Robust gate drive protection features such as fast short-circuit protection (DESAT), active Miller clamp, shoot-through protection, fault, shutdown, and overcurrent protection make them well-suited for both silicon and wide bandgap power devices, including CoolGaNTM and CoolSiCTM. CoolSiCTM MOSFET gate drivers Three phase Gate driver support ICs MOSFET gate drivers CoolGaNTM HEMTs gate drivers IGBT gate drivers Synchr. buck Gate driver selection guide Gate driver forum Gate driver configuration 1-Channel By switch device 5V 25 V Gate driver finder 100 V 200 V Automotive qualified 500 V 600 V 650 V 1200 V High-side Low-side High-side Gate drivers Low-side 2-Channel High- and low-side Half-bridge 4-Channel Full-bridge 6-Channel Three-phase System building blocks Non-isolated (N-ISO) Current sense Start-up Junction isolation (JI) Silicon on insulator (SOI) Advanced features for different applications Our EiceDRIVERTM gate drivers provide advanced features such as integrated bootstrap diode(BSD), overcurrent protection, shutdown, fault reporting, enable, input filter, OPAMP, DESAT, programmable deadtime, shoot through protection, active miller clamp, active shutdown, separate sink and source outputs, short circuit clamping, soft shutdown, two level turn off, galvanic isolation(functional, basic and reinforced), etc. Coreless transformer (CT) Right configuration for any power dicrete and module Our portfolio spans a variety of configurations, voltage classes, isolation levels, protection features, and package options. We offer excellent product families of galvanic isolated gate drivers, automotive qualifies gate drivers, 200 V, 500-700 V, 1200 V level shift gate drivers, and nonisolated low-side drivers. Level-shifting technology (SOI&JI) Coreless transformer (CT) technology Industrial robotics Non-Isolated (N-ISO) technology www.infineon.com/gatedriver For more details on the product, click on the part number. 288 Dual-channel low-side driver Dual-channel high-side driver Both channels allow individual high voltage offsets, no interlock Applications Discrete IGBTs Both channels allow individual low voltage offsets, no interlock Allows high voltage offset between input and output 500-950 V MOSFETs Allows low offset of the voltage between input and output Single-channel high-side driver WBG semiconductors Single-channel low-side driver 20-300 V MOSFETs EiceDRIVERTM overview Four channels in a package with two independent half bridges Current sense Current sensing across a highvoltage offset between sense input and data output Power ICs Intelligent switches and input ICs Three-phase bridge Six channels in a package with three independent half bridges Gate driver ICs Full-bridge driver Two interlocked channels where one of the channel allows a high voltage offset Microcontrollers Two non-interlocked channels, one for high, one for low voltage offsets Half-bridge driver Synchronous-buck driver High speed drivers for dual high-side and low-side MOSFETs in synchronous rectified buck converters XENSIVTM sensors High and low-side driver Packages www.infineon.com/gatedriver For more details on the product, click on the part number. 289 EiceDRIVERTM highlight products EiceDRIVERTM 1EDN Rugged, cool and fast, single-channel low-side 4 A/8 A gate driver ICs Single-channel MOSFET gate driver ICs are the crucial link between control ICs and powerful MOSFET switching devices. EiceDRIVERTM 1EDN family is fast, precise, strong and compatible. In SMPS designs, for fast MOSFET switching, high efficiency is enabled by 5 ns short slew rates and 5 ns propagation delay precision. Separate source and sink outputs simplify the application design, while industry standard packages and pinout ease system design upgrades. EiceDRIVERTM 1EDN family brings about the new reference in ruggedness and low power dissipation. A -10 V robustness of control and enable inputs provide crucial safety margin when driving pulse transformers. 5 A reverse output current robustness eliminates the need for Schottky switching diodes when driving MOSFETs in TO-220 and TO-247 packages. True rail-to-rail low impedance output stages ensure the cool operation of driver ICs, while 4 V and 8 V UVLO (undervoltage lockout) options for instant MOSFET offer protection during start-up and under abnormal conditions. Application overview: 800 W switched mode power supply PFC LLC Synchronous rectification L CoolSiCTM Schottky diode G6 CoolMOSTM CFD7 or P7 +12 V CoolMOSTM CFD7 or P7 OptiMOSTM 5 CoolMOSTM C7 or P7 1EDN gate driver OptiMOSTM 5 1EDN gate driver N GND 1EDN gate driver Pulse transformer 2EDN gate driver PWM controller PFC controller Isolation Features and benefits Product features Package SOT-23 6-pin SOT-23 5-pin WSON 6-pin High power efficiency Fast Miller plateau transition Precise timing Low power dissipation in driver IC Fast and reliable MOSFET turn-off, - in hard switching PFC with SiC diode - in half-bridges and synchronous rectifications Cooler driver IC operation Higher MOSFET drive capability Instant MOSFET protection during start-up and under abnormal operation Crucial safety margin to drive pulse transformer Increases power density BOM savings Short time-to-market independent of control IC Increased GND-bounce robustness Saving switching diodes Straight forward design upgrades UVLO Product name 4V 1EDN7511B Orderable part number Pinout 1EDN7511BXUSA1 8V 1EDN8511B 1EDN8511BXUSA1 4V 1EDN7512B 1EDN7512BXTSA1 4V Application benefits Product benefits 4 A source/8 A sink current 6 ns rise/5 ns fall times 5 ns propagation delay precision True rail-to-rail low impedance output stages 4 V and 8 V UVLO options 19 ns propagation delay -10 V robustness of inputs 5 A reverse output current robustness Industry standard pinout and packages 1EDN7512G 1EDN7512GXTMA1 VDD 1 OUT_SRC 2 OUT_SNK 3 VDD 1 GND 2 IN+ 3 IN- 1 GND 2 GND 3 1EDN 6 IN+ 5 IN- 4 GND 5 OUT 4 IN- 6 IN+ 5 OUT 4 VDD 1EDN 1EDN www.infineon.com/1edn For more details on the product, click on the part number. 290 20-300 V MOSFETs EiceDRIVERTM 1EDN7550 and 1EDN8550 Single-channel low-side gate driver family with truly differential inputs prevents false triggering of power MOSFETs WBG semiconductors 500-950 V MOSFETs Single-channel MOSFET gate driver ICs are the crucial link between control ICs and powerful MOSFETs. The input signal levels of conventional low-side gate driver ICs are referenced to the ground potential of the gate driver IC. If in the application the ground potential of the gate driver IC shifts excessively, false triggering of the gate driver IC can occur. Gate driver ground-shifts have two main causes: the parasitic ground inductance between where the gate driver IC is placed and where the control-IC resides, and parasitic source inductances between the gate driver IC and the MOSFET driven by it. Overcome ground-shift challenges in your design with Infineon's single-channel, low-side, EiceDRIVERTM gate driver ICs with truly differential inputs. The 1EDN7550/1EDN8550 gate driver ICs feature control signal inputs which are largely independent from the ground potential. Only the voltage difference between its input contacts is relevant, which prevents false triggering of power MOSFETs. 1EDN7550 driving CoolMOSTM SJ MOSFET on single-layer PCB Applications EiceDRIVERTM highlight products Pinout 12 V Rbias PWM controller VDD PWM RCM1 CS RCM2 in + in - CoolMOSTM P7 1EDN 7550 OUT source RG1 OUT sink RG2 Cbulk Parasitic source inductance Cbias Parasitic GND Inductance ININ- 1 6 OUT_SNK OUT_SNK GND GND 2 1EDN7511B 5 1EDN8511B OUT_SRC OUT_SRC IN+ IN+ 3 4 Discrete IGBTs CoolSiCTM VDD VDD Power ICs GND 1EDN8550 driving Kelvin source CoolMOSTM SJ MOSFET in boost PFC 12 V CoolSiCTM Rbias CoolMOSTM P7, C7 or G7 VDD OUT CS IN + R CM1 IN - RCM2 in + in - 1EDN 8550 Cbias OUT source RG1 OUT sink RG2 Kelvin-source contact Rcurrent sense CS Cbulk Intelligent switches and input ICs PFC controller Parasitic source inductance GND Product benefits Robust against ground shifts Fast Miller plateau transition Fast shut-off No diode voltage drop near zero Low MOSFET switching losses Robust against false Up to 15 MHz switching speed Precise No Schottky clamping diodes required Fast and reliable MOSFET turn-off Small Efficiency gains Increased power density and BOM savings Instant MOSFET protection under abnormal from gate driver GND from power MOSFET switching gate voltage at turn-off Low power dissipation within gate driver IC of the outputs 4 V and 8 V UVLO versions SOT-23 package, 6 pins Type Control inputs independent Ground shift robustness MOSFET triggering Highest effective MOSFET driving power operation High power density UVLO Package Orderable part number +/- 70 V 4V SOT-23 6-pin 1EDN7550BXTSA1 +/- 70 V 8V SOT-23 6-pin 1EDN8550BXTSA1 dynamic static 1EDN7550B +/- 150 V 1EDN8550B +/- 150 V Microcontrollers Truly differential inputs 4 A source current 8 A sink current Separate source/sink outputs Low-ohmic output stage 29 ns input minimum pulse width 7 ns propagation delay accuracy 5 A reverse current robustness Application benefits XENSIVTM sensors Product features Gate driver ICs Features and benefits Packages www.infineon.com/1EDN-TDI For more details on the product, click on the part number. 291 EiceDRIVERTM highlight products EiceDRIVERTM 2EDN Rugged, cool and fast, dual-channel low-side 4 A/5 A driver IC Dual-channel driver ICs are the crucial link between digital control ICs and powerful MOSFET and GaN switching devices. EiceDRIVERTM 2EDN family is fast, precise, strong and compatible. In SMPS designs, high efficiency is enabled by 5 ns short slew rates and 10 ns propagation delay precision for fast MOSFET and GaN switching. The family offers numerous deployment options thanks to two 4 A/5 A channels. The channel-to-channel accuracy of 1 ns allows using two channels in parallel, while industry standard packages and pinout ease system design upgrades. EiceDRIVERTM 2EDN family offers the new reference in ruggedness and low power dissipation. A 5 A reverse output current robustness eliminates the need for Schottky switching diodes and reduces bill-of-material. Industry standard pinout configuration Application overview 800W 130kHz switched mode power supply PFC LLC Sync. rec. 110 VAC - 240 VAC OptiMOSTM 5 CoolSiCTM Schottky diode G6 CoolMOSTM C7 or P7 CoolMOSTM CFD7 or P7 +12 V GND OptiMOSTM 5 ENA 1 INA 2 GND 3 INB 4 2EDN7524 8 ENB 7 OUTA 6 VDD 5 OUTB CoolMOSTM CFD7 or P7 GND 2EDN Gate driver PFC controller Pulse transformer 2EDN Gate driver 2EDN Gate driver PWM controller ICE3PCS01G ICE2HS01G or XMC4000 Isolation Features and benefits Product features 5 A souce/sink current 5 ns rise/fall times <10 ns propagation delay precision True rail-to-rail low impedance output stages 4 V and 8 V UVLO options 19 ns propagation delay for both control and enable inputs -10V robustness of control and enable inputs 5 A reverse output current robustness 2 independent channels Excellent 1 ns channel-to-channel accuracy Industry standard pinout and packages Package UVLO 4V DSO 8-pin 8V 4V TSSOP 8-pin 8V WSON 8-pin 4V Product benefits Application benefits Fast Miller plateau transition Precise timing High power efficiency Low power dissipation in driver IC Fast and reliable MOSFET turn-off, independent of control IC Increased GND-bounce robustness Saves switching diodes Option to increase drive current by truly concurrent switching of 2 channels Straight forward design upgrades Inputs Product name Orderable part number Direct Inverted Direct Direct Inverted Direct Inverted Direct Direct Inverted Direct 2EDN7524F 2EDN7523F 2EDN7424F 2EDN8524F 2EDN8523F 2EDN7524R 2EDN7523R 2EDN7424R 2EDN8524R 2EDN8523R 2EDN7524G 2EDN7524FXTMA1 2EDN7523FXTMA1 2EDN7424FXTMA1 2EDN8524FXTMA1 2EDN8523FXTMA1 2EDN7524RXUMA1 2EDN7523RXUMA1 2EDN7424RXUMA1 2EDN8524RXUMA1 2EDN8523RXUMA1 2EDN7524GXTMA1 Inverted 2EDN7523G 2EDN7523GXTMA1 - in hard-switching PFC with SiC diode - in half-bridges and synchronous rectifications Cooler driver IC operation Higher MOSFET drive capability Instant MOSFET protection under abnormal operation Crucial safety margin to drive pulse transformer Increases power density BOM savings One IC covering many applications Short time to market Current 5A 4A 5A 4A 5A www.infineon.com/2edn For more details on the product, click on the part number. 292 The EiceDRIVERTM 2EDi product family is designed for use in high-performance power conversion applications. Very strong 4 A/8 A source/sink dual-channel gate drivers increase efficiency in CoolMOSTM and OptiMOSTM MOSFET half-bridges. The low propagation delay of 37 ns, combined with highly accurate and stable timing overtemperature and production, enables further efficiency gains within and across galvanically isolated power stages or in multiphase/multilevel topologies. The availability of functional and reinforced isolated drivers in different packages makes them the perfect fit for both primary-side and (safe) secondary-side control. Gate driver outputs come with a high 5 A reverse current capability and 150 V/ns CMTI robustness for high dv/dt power loops. For slower switching or driving smaller MOSFETs, 1 A/2 A peak current product variants are available as well. System application diagram 2EDF7275F 4 A/8 A 2EDF7175F 1 A/2 A Functional isolation TCOM PDU Non-isolated DC-DC Brick CPU (VRM) POL power 2EDS8265H 4 A/8 A 2EDS8165H 1 A/2 A 2EDF7275K 4 A/8 A 2EDF7235K 4 A/8 A w. DTC Reinforced isolation Functional isolation 4 mm Discrete IGBTs Primary stage PFC TCOM supplies Isolated DC-DC 8 mm DSO 16-pin Narrow body 1.27 mm lead pitch DSO 16-pin Wide body 1.27 mm lead pitch Power ICs EMI Filter Sync Rec LGA 13-pin 5x5 mm 0.65 mm lead pitch Product key features Product benefits System benefits Fast power switching with accurate timing Available with 4 A/8 A and 1 A/2 A source/sink currents Propagation delay typ. 37 ns with 3 ns channel-to-channel mismatch Max. delay variation ~14 ns Optimized for area and system BOM Isolation and driver in one package Low power dissipation due to low on-resistance Output stages with 5A reverse current capability Efficiency gain and lower losses Lower switching losses in half-bridges due to fast and accurate turn on/off Perfect for new digital, fast high resolution PWM control including light load optimization Improved thermal behavior at smaller form factor LGA with 1 mm, DSO with 2.3 mm package height versus volume > 1 cm3 for pulse transformers Eliminates two costly protection diodes on the gate driver outputs Enabling higher system efficiency and higher power density designs Robust design against switching noise Protection and safe operation Ideal for use in high power designs with fast switching transients Reliable CT coreless transformer PWM signal chain to turn-on high-side MOSFETs Extending end-product lifetime by improving safe operation of power switches in normal and abnormal field (grid) conditions Output- to -output channel isolation Flexible configurations HS+LS, HS+HS, LS+LS or 2x Imax on 1xHS Input- to output channel isolation Regulatory safety Functional for primary-side control Reinforced for secondary-side control Lower EMI by ground isolation, driver proximity to MOSFETs or the use of 4-pin Kelvin source MOSFETs Simplified safety approval through component (VDE884-x, UL1577) and system (IEC60950, IEC62386) certificates Functional level galvanic isolation Functional and reinforced galvanic isolation Orderable part number (OPN) 2EDF7275F 2EDF7175F 2EDF7275K 2EDF7235K 2EDS8265H 2EDF7275FXUMA1 2EDF7175FXUMA1 2EDF7275KXUMA1 2EDF7235KXUMA1 2EDS8265HXUMA1 2EDS8165H 2EDS8165HXUMA1 Package PWM input type Driver source/ sink current NB-DSO16 10 x 6 mm 4 A/8 A 1 A/2 A LGA13 5.0 x 5.0 mm 4 A/8 A WB-DSO16 10.3 x 10.3 mm Dual mode (IN_A, IN_B) Input to output isolation Gate driver UVLO Isolation class Rating Surge testing Safety certification 4V Functional VIO =1.5 kVDC n.a. n.a. VIOSM = 10 kVpeak (IEC60065) VDE0884-10 UL1577 IEC60950 IEC62368 CQC Dead-time control no yes 4 A/8 A 8V 1 A/2 A Gate driver ICs CMTI >150 V/ns Undervoltage lockout function for switch protection Microcontrollers inductive voltage over- and undershoots Very good common mode transient immunity Improving long term competitive cost position, integration and mass manufacturability XENSIVTM sensors Floating drivers are able to handle large Intelligent switches and input ICs Features and benefits Part number WBG semiconductors Fast, robust, dual-channel, functional and reinforced isolated MOSFET gate drivers with accurate and stable timing 500-950 V MOSFETs 20-300 V MOSFETs EiceDRIVERTM 2EDi Applications EiceDRIVERTM highlight products Reinforced VIOTM = 8 kVpeak (VDE0884-1x) VISO = 5.7 kVrms (UL1577) no Packages www.infineon.com/2edi For more details on the product, click on the part number. 293 EiceDRIVERTM highlight products GaN EiceDRIVERTM Single-channel isolated gate driver ICs for high voltage GaN switches CoolGaNTM e-mode HEMTs are best driven by Infineon's GaN EiceDRIVERTM ICs, the 1EDF5673K, 1EDF5673F and 1EDS5663H. They ensure robust and highly efficient high voltage GaN switch operation whilst concurrently minimizing R&D efforts and shortening time-to-market. High power SMPS application example Totem pole Full-bridge PFC High voltage CoolGaNTM AC LINE Synchronous rectifier Resonant LLC High voltage CoolGaNTM CoolMOSTM High voltage CoolGaNTM OptiMOSTM OptiMOSTM OptiMOSTM OptiMOSTM Key use cases Totem pole PFCs Vienna rectifiers Multilevel topologies Resonant LLC EMI filter High voltage CoolGaNTM High voltage CoolGaNTM High voltage CoolGaNTM CoolMOSTM 2 x EiceDRIVERTM 2EDF7275 PFC controller 2x GaN EiceDRIVERTM 1EDF5673* 4x GaN EiceDRIVERTM 1EDS5663H* EiceDRIVERTM 2EDF7275 LLC controller *GaN EiceDRIVERTM ICs are single-channel products Features and benefits Key features Key benefits Low ohmic outputs: Source: 0.85 Sink: 0.35 Positive and negative gate drive currents: Fast turn-on/turn-off GaN switch slew-rates Single-channel galvanic isolation: Functional: VIO= 1500 VDC VIOWM = 510 Vrms (DSO 16-pin) VIOWM = 460 Vrms (LGA 5x5) Firmly hold gate voltage at zero, during off-phase: Reinforced: VIOTM = 8000 Vpk (VDE 0884-10 pending) VIOWM = 1420 VDC CMTI min: 200 V/ns Timing: Minimum output pulse width: 18 ns Propagation delay accuracy: 13 ns Avoids spurious GaN switch turn-on Up to 50% lower dead time losses Configurable and constant GaN switching slew-rates, across wide range of switching frequency and duty-cycle: Robust and energy efficient SMPS designs Short time to market Integrated galvanic isolation: Robust operation in hard-switching applications Safe isolation where needed GaN EiceDRIVERTM ICs evaluation environment High-frequency (1 MHz) half-bridge evaluation board EVAL_1EDF_G1_HB_GAN Key components: GaN switches: 2x CoolGaNTM 600 V e-mode HEMTs (IGOT60R070D1) GaN drivers: 2x GaN EiceDRIVERTM (1EDF5673K) Order code: EVAL1EDFG1HBGANTOBO1 DSO 16-pin 150 mil LGA 13-pin 5x5 mm DSO 16-pin 300 mil Package Product 1EDF5673K 1EDF5673F OPN 1EDF5673KXUMA1 1EDF5673FXUMA1 1EDS5663HXUMA1 Isolation (input to output) VIO = 1500 VDC VIO = 1500 VDC VIOTM = 8000 Vpk (VDE0884-10 pending) Source/sink output resistance 0.85 /0.35 0.85 /0.35 0.85 /0.35 UVLO 4.5 V / 5.0 V 4.5 V / 5.0 V 4.5 V / 5.0 V 1EDS5663H Charger www.infineon.com/gan-eicedriver For more details on the product, click on the part number. 294 20-300 V MOSFETs 650 V level shift SOI and JI gate driver for IGBTs and MOSFETs 500-950 V MOSFETs EiceDRIVERTM 2ED210xS06 and 2ED218xS06 - 650 V half-bridge, high and low-side gate drivers with integrated bootstrap diode VCC HIN LIN 2ED2184S06J IN Up to 650 V 1 VCC VB 8 2 HIN HO 7 3 LIN VS 6 4 COM LO 5 SD VSS 1 IN 14 2 SD VB 13 3 VSS HO 12 4 DT VS 11 5 COM 6 LO 9 7 VCC 8 RDT TO LOAD VCC Up to 650 V TO LOAD Discrete IGBTs 2ED2106S06F WBG semiconductors The 2ED2106/08/09/091S06 gate driver family and 2ED2181/83/84S06 high-current gate driver family are high-voltage power MOSFET and IGBT driver families with half-bridge and high and low-side configuration. Based on SOI-technology, this device has excellent robustness and noise immunity with the capability to maintain operational logic at negative voltages of up to -11 VDC on the VS pin (VCC=15 V) on transient voltages. With no parasitic structures, the device is immune to parasitic latch-up at all temperature and voltage conditions. Simplified application diagrams Applications EiceDRIVERTM highlight products 10 Key benefits Infineon 650 V thin-film SOI-technology Integrated ultrafast, low resistance bootstrap diode Negative VS transient immunity of 100 V Logic operational up to -11 V on VS pin Separate logic and power ground (DSO-14) Low level shift losses, suitable for high-frequency application Quick time to market, reduced BOM cost High reliability and robustness SOI technology eliminates the parasitic bipolar transistors that are causing latch-up Integrated input filters enhance noise immunity Intelligent switches and input ICs Key benefits Power ICs Features and benefits Power dissipation of Infineon SOI Output current 2ED2106S07F * 2ED21064S07J * 2ED2108S07F * 2ED21084S07J * +0.29 A/-0.7 A 2ED2109S07F * Standard HS+LS driver Max. temperature 122.2 Input Logic Configuration HIN, LIN Hide side + Low none side HIN, /LIN IN, /SD 2ED21094S07J * IN, DT/SD 2ED21091S07F * 2ED2181S07F * 2ED21814S07J * HIN, LIN 2ED2182S07F * 2ED21824S07J * 2ED2183S07F * 20.4 DC = 300 V; CoolMOSTM P7 in D-Pak; 300 kHz switching frequency Half-bridge 2ED2184S07F * 2ED21844S07J * HIN, /LIN IN, /SD DSO-8 DSO-14 DSO-8 Programmable DSO-14 540 ns DSO-8 Hide side + Low None side Half-bridge Package 540 ns Programmable +2.5 A/-2.5 A 2ED21834S07J * Deadtime Gate driver ICs Infineon SOI HS+LS driver Max. temperature 66.6 Part DSO-14 DSO-8 DSO-8 DSO-14 400 ns DSO-8 Programmable DSO-14 400 ns DSO-8 Programmable DSO-14 400 ns DSO-8 Programmable DSO-14 Microcontrollers 120.3 XENSIVTM sensors Evaluation board : EVAL-M1-2ED2106S Key components: 650 V high- and low-side gate driver with integrated bootstrap diode (2ED2106S06F) 650 V IGBT6 (IKB10N65ET6) Order code: EVALM12ED2106STOBO1 *For more information on the product, contact our product support Packages www.infineon.com/SOI For more details on the product, click on the part number. 295 EiceDRIVERTM highlight products 650 V level shift SOI and JI gate drivers for IGBTs and MOSFETs EiceDRIVERTM 2ED28073J06F - 600 V half-bridge junction isolated gate driver with integrated bootstrap FET The 2ED28073J06F is a high voltage, high-speed power MOSFET and IGBT drivers with dependent high and low-side referenced output channels. It is optimized to drive CoolMOSTM PFD7 in motor drive applications. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction. The output drivers feature a high-pulse current buffer stage designed for minimum driver cross-conduction. The floating channel can be used to drive N-channel power MOSFETs or IGBTs in the high side configuration which operates up to 600 V. Typical application diagram VCC HIN LIN VCC HIN LIN COM Up to 200 V VB HO VS to load LO Features and benefits Key features Key benefits Source current / sink current: + 20 mA/ - 80 mA Smaller current for low power drive application with CoolMOSTM PFD7, reduced system cost of high voltage capacitor (CDS). Negative VS transient immunity of 70 V, dV/dt immune High reliability and robustnexss Lower di/dt gate driver Better noise immunity Integrated bootstrap FET Quick time to market, reduced BOM cost Integrated short pulse/noise rejection filter An improvement in the input/output pulse symmetry of the driver and helps to reject noise spikes and short pulses Evaluation board EVAL_DRIVE_3PH_PFD7 Key components: CoolMOSTM PFD7 gate driver suitable for low power drives (2ED28073J06F *) 600 V CoolMOSTM PFD7 MOSFET (IPN60R1K5PFD7S) Order code: EVALDRIVE3PHPFD7TOBO1 EVAL_DRIVE_3PH_PFD7 is a three-phase motor drive evaluation board with sensorless field oriented control (FOC), which demonstrates Infineon's latest SJ technology tuned specially for motor drives by introducing a complete system-level solution using discrete inverters to control and drive three-phase motors. The evaluation board EVAL_ DRIVE_3PH_PFD7 was developed to support customers in the first steps of designing a three-phase inverter stage for the target applications www.infineon.com/700VHVIC *For more information on the product, contact our product support 296 For more details on the product, click on the part number. Typical application diagram DC BUS+ VB 1, 2, 3 HO 1, 2, 3 To load VS 1, 2, 3 Discrete IGBTs VCC HIN 1, 2, 3 LIN 1, 2, 3 FLT/EN/RCIN ITRIP LO 1, 2, 3 Power ICs COM VSS DC BUS- Key benefits Key benefits Infineon thin-film SOI technology Output source/sink current capability +0.35 A/-0.65 A Integrated ultrafast, low RDS(on) bootstrap diode Overcurrent protection (ITRIP 5% reference) Fault reporting, automatic fault clear and enable function on the same pin (RFE) Tolerant to negative transient voltage up to -100 V (pulse width is up 700 ns) Intelligent switches and input ICs Features and benefits given by SOI technology, high reliability and robustness Drive 1200 V IGBT and SiC MOSFET Quick time to market, reduced BOM cost Advanced protection Gate driver ICs Negative VS transient robustness of Infineon SOI PW (ns) 0 0 Applications WBG semiconductors The 6ED2230S12T is a 1200 V three-phase SOI gate driver with an integrated bootstrap diode and overcurrent protection, with typical 0.35 A source and 0.65 A sink currents in a DSO-24 package (DSO-28 with 4 pins removed) for driving IGBTs. Proprietary HVIC and latch-immune CMOS technologies enable a robust monolithic design. A current-trip function which terminates all six outputs can also be derived from this resistor. An open-drain FAULT signal is provided to indicate that an overcurrent or undervoltage shutdown has occurred. Fault conditions are cleared automatically after a delay programmed externally via an RC network. The output drivers feature a high-pulse current buffer stage designed for minimum driver cross conduction. Propagation delays are matched to simplify the HVIC's use in high-frequency applications. 20-300 V MOSFETs 6ED2230S12T - 1200 V three-phase gate driver with overcurrent protection and integrated bootstrap diode (BSD) 500-950 V MOSFETs EiceDRIVERTM highlight products 200 400 600 800 1000 SOA -60 -80 -100 -120 Evaluation board available: EVAL-M1-6ED2230-B1 Key components: 1200 V three-phase gate driver with integrated bootstrap diode (6ED2230S12T) 1200 V, 15 A three-phase PIM IGBT module (FP15R12W1T4) Order code: EVALM16ED2230B1TOBO1 Microcontrollers -40 XENSIVTM sensors Minus Vs (V) -20 Negative VS transient SOA characterization @ VBS=15 V of 6ED2230S12T Packages www.infineon.com/SOI For more details on the product, click on the part number. 297 EiceDRIVERTM highlight products 200 V level shift SOI and JI gate drivers for MOSFET Half-bridge, high and low-side, three-phase gate driver family for low voltage motor drives Infineon offers 200 V ICs tailored for low-voltage (24 V, 36 V, and 48 V) and mid-voltage (60 V, 80 V, and 100 V) motor drive applications. These MOSFET drivers provide full driver capability with extremely fast switching speeds, designedin ruggedness and low power dissipation. The 200 V driver ICs are offered in standard packages and pinout configurations with various logic input options for high design flexibility and fast time to market. Low side supply voltage (VCC) and floating channel supply (VBS) undervoltage lockout (UVLO) ensures reliable start-up operation. The three-phase product family utilizes Infineon's unique Silicon-on-Insulator(SOI) level shift technology to provide functional isolation with industry leading negative VS robustness and reduced level shift losses. The family provides integrated Bootstrap Diodes(BSD) to reduce BOM cost, simplify layout, and reduce PCB size. Simplified application diagram IRS2008S DC -Bus 6EDL04N02PR Up to 200 V VCC VCC IN SD VB IN SD COM VCC HIN 1,2,3 LIN 1,2,3 EN HIN 1,2,3 LIN 1,2,3 EN VCC VB 1,2,3 HO 1,2,3 To Load VS 1,2,3 5V HO VS to load FAULT FAULT LO 1,2,3 R RCIN LO RCIN C RCIN COM ITRIP VSS R Sh Features and benefits VSS Key features Key benefits VCCUVLO protection with VBS UVLO for IRS2005/7/8 Fast and reliable switching Deadtime and cross-conduction prevention logic Protection under abnormal operation, Ensure reliable start-up operation Three-phase solution with silicon-on-insulator (SOI) technology with integrated bootstrap diodes (BSD) Reduced BOM cost, smaller PCB at lower cost with simpler design Deadtime and cross-conduction prevention logic Increased device reliability, operational headroom Fully operational to +200 V off set voltage Low-cost bootstrap power supply Tolerate to negative transient voltage, dV/dt immune Easy-to-use, straight-forward design Low quiescent current Fast time to market Increased negative VS robustness for increased reliability Various input options , standard pin-out and packages Evaluation board EVAL-PS-IRS200X for stepper motor Key components: 200 V high-side and low-side level-shift gate driver (IRS2005S) OptiMOSTM 3 power MOSFET 100 V (IPP180N10N3 G) Order code: EVALPSIRS200XTOBO1 Voltage class [V] Configuration Channels Source/sink current typ. [mA] Deadtime typ. [ns] IRS2008S, IRS2008M 200 Half-bridge 2 290/600 IRS2007S, IRS2007M 200 Half-bridge 2 290/600 IRS2005S, IRS2005M 200 High- and low-side 2 6EDL04N02PR 200 Three-phase 6 Part number Evaluation board EVAL-6EDL04N02PR for battery powered application Key components: 200 V three-phase gate driver with integrated bootstrap diode (6EDL04N02PR) OptiMOSTM power MOSFET 80 V (BSB044N08NN3 G) Order code: EVAL6EDL04N02PRTOBO1 Typ. propagation delay [ns] Control inputs UVLO typ. [V] Package MSL 150 IN, SD +8.9/-8.2 DSO-8, MLPQ-14L 2 150 HIN, LIN +8.9/-8.2 DSO-8, MLPQ-14L 2 160 150 HIN, LIN +8.9/-8.2 DSO-8, MLPQ-14L 2 530 530 HIN, LIN +9/-8.1 TSSOP-28 3 on off 520 680 520 160 290/600 - 165/375 310 www.infineon.com/200VHVIC For more details on the product, click on the part number. 298 Packages For more details on the product, click on the part number. 299 XENSIVTM sensors Microcontrollers Gate driver ICs Intelligent switches and input ICs Power ICs Discrete IGBTs WBG semiconductors 500-950 V MOSFETs 20-300 V MOSFETs Applications EiceDRIVERTM highlight products Non-isolated low-side gate driver ICs 1ED44173/5/6 - 25 V low-side gate driver with integrated overcurrent protection and fault/enable function The 1ED44173N01B, 1ED44175N01B, and 1ED44176NO1F are low-voltage, non-inverting gate drivers designed for ground-referenced applications such as digitally controlled power-factor correction (PFC) circuits requiring overcurrent protection (OCP). OCP is typically implemented by using a current measurement circuit with a comparator such as LM293 and a network of resistors and capacitors. 1ED44173N01B, 1ED44175N01B, and 1ED44176NO1F also integrate up to 20% cost and 50% space savings by integrating the OCP comparator, which features an accurate current-sensing threshold tolerance of 5%. 1ED44173N01B, 1ED44175N01B, and 1ED44176NO1F also integrate fault-output reporting to the controller and driver enable functionality on the same pin. These driver ICs also have separate logic and power ground pins for operational robustness. Simplified application diagram VCC Vin+ 1ED44175N01B Microcontroller VDD VCC OUT EN/FLT COM IN OCP RFLTC I/O2 I/O1 CFLTC RCS Gnd Vin- Features and benefits Product features Product benefits Integrated overcurrent protection comparator with accurate OCP threshold Single pin for fault output and enable function Programmable fault clear time 0.5 V overcurrent threshold with accurate 5 percent tolerance Internal Schmitt trigger comparator for the Separate logic ground and gate driver return Undervoltage lockout (UVLO) protection Potential space savings up to 50 percent and cost savings up to 20 percent compared to the discrete solution enable function Flexible fault clear time setup for different microcontroller processing speeds clear time Minimizes power consumption External capacitor (CFLTC) sets the length of the fault Low quiescent supply current Application benefits Max IQCC: 750 A VSS and COM pins Specific UVLO level for IGBTs Avoids noise coupling from output to input which improves noise immunity Eliminates switching loss at low VCC supply voltage (typ. on/off = 11.9 V / 11.4 V) Evaluation board EVAL-1ED44176N01F EVAL-1ED44175N01B * EVAL-1ED44173N01B * Part Number Key components: 25 V low-side gate driver with integrated OCP (1ED4417x) Single N-Channel HEXFETTM power MOSFET 30 V (IRLML2803) Order code: EVAL1ED44176N01FTOBO1 EVAL1ED44175N01BTOBO1 EVAL1ED44173N01BTOBO1 Package IO+/- [A] UVLO [V] VOCTH [mV] ton/off [ns] Ground pins Feature 1ED44176N01F DSO-8 +0.8 /-1.75 11.9 / 11.4 500 50 VSS / COM OCP (positive current sensing), Enable, Fault, Programmable fault clear time 1ED44175N01B SOT23-6 2.6 11.9 / 11.4 -250 50 COM 1ED44173N01B * SOT23-6 2.6 8/7 -250 34 COM OCP (negative current sensing), Enable, Fault www.Infineon.com/1ED44176 www.Infineon.com/1ED44175 *Coming soon 300 For more details on the product, click on the part number. 2ED24427N01F * - 24 V, 10 A dual low-side gate driver with enable-function in DSO-8 package with thermal pad WBG semiconductors 500-950 V MOSFETs The 2ED24427N01F is a low-voltage, power MOSFET and IGBT non-inverting gate driver. Proprietary latch immune CMOS technologies enable rugged monolithic construction. The logic input is compatible with standard CMOS or LSTTL output. The output drivers feature a high pulse current buffer stage designed for minimum driver crossconduction. Propagation delays between two channels are matched. Internal circuitry on VCC pin provides an undervoltage lockout protection that holds output low until Vcc supply voltage is within operating range. Simplified application diagram Rg EN NC INA OUTA COM INB VCC OUTB To load + - Vbatt Discrete IGBTs Logic level input Rg Power ICs Features and benefits Key features Key benefits 10 A sink and 10 A source driver capability Suitable for IGBT/MOSFET paralleling, transformer driver, easily drive low RDS(on) MOSFETs at high switching frequencies 11.5 V undervoltage lockout Intelligent switches and input ICs Can be used as external booster 24 V maximum supply voltage Robustness in noisy environment Enable function Dedicated pin to terminates all outputs DSO-8 package with thermal pad Smaller thermal resistor, bigger Power dissipation Microcontrollers Order code: EVAL2ED24427N01FTOBO1 XENSIVTM sensors Key components: 24 V, 10 A dual low-side gate driver with Enable in DSO-8 package with thermal pad (2ED24427N01F * *) OptiMOSTM 5 power MOSFET 80 V (BSC026N08NS5 ) Gate driver ICs In half-bridge LLC or full-bridge ZVS power topologies, 2ED24427N01F can easily drive low RDS(on) high voltage MOSFETs in a half-bridge at high-switching frequencies in. In synchronous rectification, more than two MOSFETs can be paralleled and driven from a single channel of the driver. One 2ED24427 can easily drive both synchronous rectification legs. When higher current needed, 2ED24427N01F can boost the current from regular gate driver and drive high current IGBTs or MOSFETs or EasyPACKTM or EconoPACKTM power modules. 2ED24427 outputs can be paralleled to increase the drive current to drive power modules such as PrimePACKTM. Evaluation board EVAL-2ED24427N01F * Applications 20-300 V MOSFETs EiceDRIVERTM highlight products *Coming soon * * For more information on the product, contact our product support Packages www.infineon.com/gdlowside For more details on the product, click on the part number. 301 EiceDRIVERTM highlight products EiceDRIVERTM Enhanced 1ED-F2 and 2ED-F2 1200 V single and dual-channel, isolated driver family with DESAT and two level turn off The EiceDRIVERTM 1ED Enhanced gate driver ICs are galvanic isolated single-channel IGBT and SiC MOSFET drivers in DSO-16 package that provide output current capabilities of typically 2 A. The precision DESAT function for IGBT is also an excellent solution for SiC MOSFET short-circuit protection. All logic pins are 5 V CMOS compatible. 2ED020I12-F2 is the dual-channel version of 1ED020I12-F2 in DSO-36 package. 2ED020I12-FI is a high voltage, high-speed power MOSFET and IGBT driver with interlocking high and low-side referenced outputs. Simplified application diagram 1ED020I12-F2 10k SGND 10k +5 V 100n IN RDY FLT RST +15 V VCC2 VCC1 1 1k DESAT GND1 CLAMP 10R OUT IN+ NC INRDY 220p GND2 /FLT /RST VEE2 Features and benefits Key features Key benefits Desaturation detection Protect the power switch from damage during short circuit condition Active Miller clamp Small space-saving package with large creepage distance (>8 mm) 100 kV/s CMTI Avoids wrong switching patterns in rugged environments Short circuit clamping and active shutdown No external filter needed, cost saving and robustness Combinable Enable/Shutdown and Fault Feedback signals Higher dynamic range in PWM modulation and shorter deadtime Bipolar output supply Suitable for operation at high ambient temperature Inverting and non-inverting inputs Higher robustness in rugged environments Evaluation board: Key components: EVAL-1ED020I12-B2 EVAL-1ED020I12-BT EVAL-2ED020I12-F2 EiceDRIVERTM Enhanced 1ED020I12-F2 Order code: EVAL1ED020I12B2TOBO1 1ED-B2 with EasyPACKTM 1B IGBT module (FS25R12W1T4_B11) 1ED-BT with TRENCHSTOPTM IGBT 4 (IKW25N120H3) 2ED-F2 with TRENCHSTOPTM IGBT 3 (IKP20N60H3) 2ED020I12-F2 1ED020I12-FT 1ED020I12-B2 EVAL1ED020I12BTTOBO1 EVAL2ED020I12F2TOBO1 1ED020I12-BT 2ED020I12-FI Configuration Single Dual Single Single Single Half-bridge Package (all 300mil) DSO-16 DSO-36 DSO-16 DSO-16 DSO-16 DSO-18 Galvanic Isolation Functional Functional Functional UL 1577; VDE 0884-10 UL 1577; VDE 0884-10 Functional on high-side Protection function DESAT, UVLO DESAT, UVLO DESAT, UVLO, Two-level turn-off DESAT, UVLO DESAT, UVLO, Two-level turn-off UVLO, OPAMP, comparator Input 4.1 V/3.8 V 4.1 V/3.8 V 4.1 V/3.8 V 4.1 V/3.8 V 4.1 V/3.8 V 12 V/11 V Output 12 V/11 V 12 V/11 V 12 V/11 V 12 V/11 V 12 V/11 V 12 V/11 V DESAT charge current 500 A 500 A 500 A 500 A 500 A No Typical propagation delay 170 ns 170 ns 170 ns + TLTOff 170 ns 170 ns + TLTOff 85 ns www.infineon.com/gdisolated For more details on the product, click on the part number. 302 20-300 V MOSFETs EiceDRIVERTM 1ED Compact 1200 V single-channel, isolated driver family with active Miller clamp or separate output IN OUT- GND1 WBG semiconductors OUT+ IN+ VCC2 IN- GND2 +5 V 10R 100n 3R3 1 SGND +15 V VCC1 CLAMP GND1 IN 10R OUT+ IN+ VCC2 IN- GND2 1 +15 V Discrete IGBTs SGND VCC1 Features and benefits Key benefits DSO-8 300 mil wide body package with 8 mm creepage distance Small space-saving package with large creepage distance (>8 mm) Up to 10 A typical peak rail-to-rail output No external filter needed, cost saving and robustness 200 kV/s CMTI Avoids wrong switching patterns in rugged environments Active Miller clamp or separate output Optimized pinout for low inductance power supply 15 ns propagation delay matching Higher dynamic range in PWM modulation and shorter deadtime Short circuit clamping and active shutdown Higher robustness in rugged environments UL 1577 pending (VISO = 5 kV (rms)) Suitable for operation at high ambient temperature Evaluation board Key components: EVAL-1EDC20H12AH-SIC CoolSiCTM 1200 V IMZ120R045M1 TRENCHSTOPTM 5 IGBT IKW50N65F5 EVAL-1EDI60I12AF EVAL-1ED3121MX12H * 1ED31xx with IGBT Highspeed 3 1200 V EVAL-1ED3122MX12H * IKQ75N120CH3 EVAL-1ED3124MX12H * Power ICs Key features Key components: EVAL1EDC20H12AHSICTOBO1 EVAL1EDI60I12AFTOBO1 EVAL1ED3121MX12HTOBO1 EVAL1ED3122MX12HTOBO1 EVAL1ED3124MX12HTOBO1 1ED Compact, 1200 V, DSO-8, Separate sink/source outputs 1EDI60I12AF 1EDI40I12AF 1EDI20I12AF 1EDI05I12AF 150 mil Certified 1EDI60N12AF 1EDI20N12AF 1ED3124MU12F * 300 mil 1EDI60I12AH 1EDI40I12AH 1EDI20I12AH 1EDI05I12AH 1EDI60H12AH 1EDI20H12AH 300 mil Certified 1EDC60I12AH 1EDC40I12AH 1EDC20I12AH 1EDC05I12AH 1ED3131MU12H * 1ED3123MU12H * 1ED3120MU12H * 1EDC60H12AH 1ED3124MU12H * 1ED3121MU12H * 1EDC20H12AH Typ. output current [A] 10 7.5 4 1.3 3 9 3 10 4 Prop. delay [ns] 300 300 300 300 280 100 100 125 125 Recommendation 1) All 650 V and 1200 V IGBT discrete and modules Microcontrollers 150 mil 2) All 650 V and 1200 V IGBT discrete and modules, SiC MOSFETs 1ED Compact, 1200 V, DSO-8, Combined output with active Miller clamp 150 mil 1EDI30I12MF 300 mil 300 mil Certified 1EDI20I12MF 1EDI10I12MF 1ED3125MU12F * 1ED3122MU12H * 1EDI30I12MH 1EDI20I12MH 1EDI10I12MH 1EDC30I12MH 1EDC20I12MH 1EDC10I12MH Min. output current [A] 6 6 4 2.2 Prop. delay [ns] 100 300 300 300 Recommendation 2) All 650 V and 1200 V IGBT discrete and modules, SiC MOSFETs XENSIVTM sensors 150 mil Certified Intelligent switches and input ICs 100n Active Miller clamp Gate driver ICs +5 V 500-950 V MOSFETs Infineon's EiceDRIVERTM 1ED Compact family now includes the 1ED-X3 Compact family, which is recognized under UL 1577 (pending) with an insulation test voltage of VISO = 5000 V(rms) for 1 min. 1EDC Compact 300 mil family is recognized under UL 1577 with an insulation test voltage of VISO = 2500 V(rms) for 1 min. The functional isolated EiceDRIVERTM 1EDI Compact 150 mil and 300 mil families are also available. The EiceDRIVERTM 1ED Compact family is the perfect driver for superjunction MOSFETs such as CoolMOSTM, IGBTs, silicon carbide (SiC) MOSFETs such as CoolSiCTM, and IGBT modules. Simplified application diagram Separate sink/source outputs Applications EiceDRIVERTM highlight products 1) All 650 V and 1200 V IGBT modules Perfect for driving SiC MOSFET * Coming soon Packages www.infineon.com/1EDcompact For more details on the product, click on the part number. 303 EiceDRIVERTM highlight products EiceDRIVERTM Enhanced 1ED34xx (X3 analog) and 1ED38xx (X3 digital) * 1200 V single-channel, isolated driver family with DESAT and soft-off and I2C configurability The X3 Analog (1ED34x1Mx12M) family and X3 Digital (1ED38x0Mx12M) include galvanic-isolated single-channel gate driver ICs in a small DSO-16 fine pitch package with a large creepage and clearance of 8 mm. The gate driver ICs provide a typical peak output current of 3 A, 6 A and 9 A. The precision DESAT function for IGBT is also an excellent solution for SiC MOSFET short-circuit protection. Both X3 analog and digital families provide active Miller clamp, soft-off, separate sink and source output. The 1ED34x1Mx12M analog family provides adjustable DESAT filter time and adjustable Softoff current level functionality. The 1ED38x0Mx12M digital family provide I2C configurability for multiple parameters including DESAT, soft-off, UVLO, active Miller clamp, overtemperature shutdown, two-level turn-off through software. Simplified application diagram Analog DESAT GND1 IN IN RDYC RDYC FLT_N VCC2 VCC1 ON OFF 1 +3V3 1k VCC1 SGND 1R IN IN RDYC RDYC FLT_N FLT_N GND2 ADJB 100n 1R CLAMP ADJA 10k 100n Digital +15 V 10k 10k SGND 10k +3V3 VEE2 GND1 +15 V VCC2 1 DESAT 1k 1R ON 1R OFF CLAMP FLT_N SCL SCL SDA SDA GND2 VEE2 Features and benefits Key features Key benefits Adjustable DESAT and Adjustable Soft-off Optimized short circuit control for 3-level inverters High number of configuration capabilities through I2C interface Flexible design 100 kV/s CMTI Avoids wrong switching patterns in rugged environments Active Miller clamp or clamp driver Small space-saving package with large creepage distance (>8 mm) Separate source/sink output pins No external filter needed, cost saving and robustness Short circuit clamping and active shutdown Higher dynamic range in PWM modulation and shorter deadtime VDE 0884-11 planned (VIORM = 1.4 kV) Suitable for operation at high ambient temperature UL 1577 pending (VISO = 5 kV (rms)) Higher robustness in rugged environments DESAT protection VCC2 VD ID DESAT +15 V RDESAT DDESAT 9V Logic OUT CDESAT GND2 Evaluation board available: EVAL-1ED3491Mx12M * VCE Protection Reliable short-circuit detection via accurate desaturation (DESAT) detection circuits (current source and comparator) protects the power switches from damage during short-circuit condition Two-level turn-off (TLTO) for short-circuit current protection to lower collector-emitter voltage overshoot Active Miller clamping option protects against parasitic turn-on due to high dV/dt Built-in short-circuit clamping limits the gate voltage during short circuit www.infineon.com/gdisolated *Coming soon 304 For more details on the product, click on the part number. 20-300 V MOSFETs EiceDRIVERTM 1EDS-SRC 1200 V single-channel, isolated driver family with slew-rate control 500-950 V MOSFETs The new EiceDRIVERTM slew-rate control (SRC) family serves the latest generation of highly efficient low-EMI electric drive systems with improved efficiency. This is the first high-voltage isolated gate driver on the market with dynamic slew-rate control (SRC) which allows on-the-fly dV/dt control of electric drives through precise gate current control, providing the best trade-off between minimum power dissipation and minimum EMI depending on operating conditions. Simplified application diagram 5V VCC2 VCC1 VCC2 /FLT DESAT WBG semiconductors 5V RDESAT RDY2 CS RDY1 OCOFF DDESAT CDESAT RS CD ON PADP Control unit RD RSENSE C1 T1 T2 INP GATE INN CZ RSOFF VZ PADN ROFF RF SPEED OFF CF SIGI SOFF SIGO PRB RPRB2 VEE2 GND1 RPRB1 C3 VCC2 C2 GND2 GND Part Number Isolation rating 1EDS20I12SV Isolation according VDE 0884-10 (VIORM= 1420 V) and UL 1577 certified with VISO= 5 kV (rms) for 1 min 1EDU20I12SV UL 1577 certified with VISO= 5 kV (rms) for 1 min 1EDI20I12SV Functional isolation Discrete IGBTs EN Key benefits Real-time adjustable gate current control Low EMI during low load conditions and high efficiency during high load conditions Desaturation detection Reduction or elimination of dV/dt filter Overcurrent protection for sense IGBTs and conventional IGBTs Drive power modules up to 900 A Soft turn-off shutdown: 1 A pull down to rail Drive 1200 V single-channel IGBT driver Two-level turn-off Unique: NPC1 short circuit protection for three-level inverters Feature - real-time gate current control Effect - gate turn-on tunable across a very large dV/dt range: 0 SRC controlled gate current in 11 levels Adjustable gate current Intelligent switches and input ICs Key features Power ICs Features and benefits -0.5 -1.5 Gate driver ICs -1 dV/dt [kV/s] Adjustable dV/dt range Minimum speed Maximum speed -2 -2.5 -3 Preboost phase Time Microcontrollers dV/dt = f(IC, 25C, VSPEED) -3.5 -4 0 200 400 600 800 1000 IC [A] Evaluation board Key components: Order code: EVAL-1EDS20I12SV Isolated gate driver with slew rate control EVAL1EDS20I12SVTOBO2 (1EDS20I12SV) Suitable for EconoDUALTM3 module FF600R12ME4 (module is not delivered with board) Packages www.infineon.com/SRC XENSIVTM sensors IGATE [A] Applications EiceDRIVERTM highlight products For more details on the product, click on the part number. 305 Gate driver ICs portfolio Industrial and general purpose gate driver ICs Infineon's gate driver IC solutions are the expert's choice. With more than 500 reliable and efficient gate driver solutions, we provide a comprehensive portfolio for virtually any application. Addressing various application requirements, Infineon delivers solutions with an assortment of gate driver topologies, voltage classes, drive capability, features and package options to optimize performance, minimize size and reduce cost. Some discrete gate driver ICs are also available in bare die. The table below shows additional gate driver IC features available in the current portfolio. Features Active Miller clamp Abbreviation M-CLAMP Benefits Protection against inadvertent dynamic turn-on because of parasitic Miller effects Active shutdown SD-ACT Ensures a safe IGBT off-state in case the output chip is not connected to the power supply or an undervoltage lockout is in effect Brake chopper BRAKE Integrated brake IGBT driver with protection Comparator CMP General purpose comparator included Current sense CS Senses the motor phase current through an external shunt resistor, converts from analog to digital signal, and transfers the signal to the low side Dedicated JFET control JFETDRIVE Optimized to drive SiC JFET Desaturation protection DESAT Protects the IGBT at short circuit Enable EN Dedicated pin terminates all outputs Fault reporting FAULT-RPT Indicates an overcurrent or undervoltage shutdown has occurred Fault reset FAULT-RST Dedicated pin resets the DESAT-FAULT-state of the chip High-voltage start-up HVSTART Provides easy and fast circuit start-up while enabling low circuit standby losses Integrated bootstrap diode BSD Integrated bootstrap reduces BOM Operational amplifier OPAMP An independent op-amp for current measurement or overcurrent detection Self-oscillating (oscillator) OSC Integrated front end oscillator Overcurrent protection (ITRIP) OCP Ensures safe application operation in case of overcurrent Overtemperature shutdown SD-OT Internal overtemperature protection circuit protects the IC against excessive power loss and overheating Programmable dead time DT-PROG Dead time is programmable with external resistor for flexible design Programmable fault clear time FLTC The length of the fault clear time period (tFLTC) is programmed by external capacitor which connected between FLTC and VSS (CFLTC). Programmable shutdown SD-PROG A shutdown feature has been designed into a pin Separate pin for logic ground SEP-GND Dedicated pin or logic ground for improved noise immunity Separate sink/source outputs SEP-OUT Simplifies gate resistor selection, reduces BOM, and improves dV/dt control Shoot-through protection STP Additional shoot-through protection logic such as interlock Short-circuit clamping SC-CLAMP During short circuit the IGBT's gate voltage tends to rise because of the feedback via the Miller capacitance. An additional protection circuit connected to OUT+ limits this voltage to a value slightly higher than the supply voltage. Shutdown SD Dedicated pin disables the IC outputs Soft overcurrent shutdown SD-SOFT Dedicated pin turns off the desaturated transistor, preventing overvoltages Truly differential inputs TDI 70 VDC and 150 VAC ground-shift robustness of low-side gate driver ICs Two-level turn-off TLTO Lowers VCE overshoots at turn-off during short circuits or overcurrent events UL 1577 UL Double galvanic isolation certification Undervoltage lockout UVLO Ensures safe application operation by avoiding unexpected driver behavior at low voltages VDE 0884-10 or VDE 0884-11 VDE Reinforced galvanic isolation certifications for non-optical couplers Infineon's industrial and general purpose gate driver ICs utilize the following technologies: (1) Coreless transformer technology (CT) (3) Level-shifting junction-isolation technology (JI) (2) Level-shifting silicon-on-insulator technology (SOI) (4) Non-isolated technology (N-ISO) Infineon gate driver IC technologies Non-isolated Level-shift Low voltage Comprehensive families of single- and dual-low-side drivers with flexible output current, logic configurations, and UVLOs Rugged technology of the high- Junction isolation 20 years proven technology Largest portfolio of 200 V, 600 V, 700 V and 1200 V industry standard gate drivers using rugged proprietary HVIC process voltage gate drivers, and the state-of-the-art 130-nm process Galvanic isolation Silicon on insulator Infineon SOI technology for high-voltage applications with inherent integrated bootstrap diode capability and lower level-shift losses Industry best-in-class robustness against negative VS transient spikes Coreless transformer Magnetically-coupled isolation technology provides galvanic isolation (functional, basic and reinforced) Strongest gate-drive output currents (up to 10 A) reducing need for external booster circuits www.infineon.com/gatedriver www.infineon.com/gdfinder For more details on the product, click on the part number. 306 20-300 V MOSFETs Product overview Applications Gate driver ICs portfolio To ease the selection process, this overview is structured along the configurations of the gate driver ICs, as opposed to by application topology. 1200 IO+/IOtyp. [mA] 1500/2500 2000/3000 UVLO on/off typ. [V] 12.2/11.2 10.2/9.3 2500/2500 9.1/8.2 650 290/700 360 / 700 1500/2500 20/80 290/600 78/169 180/260 9.1 / 8.3 12.2/11.2 8.9/7.7 8.9/8 8.9/8.2 8.9/8.2 9/8 9/8 9/8 11/9 200/350 210/360 220/480 250/500 600 290/600 8.9/8.2 4.1/3.8 8.9/8.2 8.9/8.2 8.9/8.2 8.9/7.7 8.6/8.2 8.9/8.2 8.9/8.2 8.9/8.2 8.6/8.2 8.9/8.2 8.9/8.2 8.9/8.2 8.9/8.2 8.9/8.2 360/700 9.1/8.3 12.5/11.6 8.9/8.2 8.9/8.2 1900/2300 2000/3000 2300/2800 Prop delay Base PN off/on typ. [ns] 85/85 2ED020I12-FI 440/440 IR2214SS 2ED2182S06F NEW 2ED21824S06J NEW 2ED2183S06F NEW 2ED21834S06J NEW 2ED2184S06F NEW 200/200 2ED21844S06J NEW 2ED2108S06F NEW 2ED21084S06J NEW 2ED2109S06F NEW 2ED21094S06J NEW 2ED21091S06F NEW 300/310 2ED2304S06F NEW 85/85 2ED020I06-FI 2ED28073J06 * * NEW 530/530 2ED2103S06F * * 90/90 2ED2104S06F * * IR2304 220/220 IR25601S IR21531 IR21531D N.A. IR25603 IRS2153D , IRS21531D IR2108 IR21084 200/220 IR2308 IR25606S IR2109 IR21091 200/750 IR21094 IR2302 IR2103 150/680 IR2104 IR25602S 500/500 IRS2890DS NEW 150/750 IR2111 150/150 IRS2304 IRS2103 150/680 IRS2104 150/750 IRS2111 IRS2108 IRS2308 200/220 IRS21084 IRS2109 200/750 IRS21091 IRS21094 2EDL05N06PF , 300/310 2EDL05N06PJ 2EDL05I06PF , 400/420 2EDL05I06PJ 8.9/8.2 8.9/8.2 8.9/8.2 8.9/8.2 8.9/8.2 10.2/9.3 9.1/8.3 12.5/11.6 200 290/600 8.9/8.2 120 2000/6000 3000/6000 4000/6000 7/6.5 www.infineon.com/gatedriver 220/180 270/680 440/440 300/310 400/420 150/160 150/680 47/47 IRS2183 IR2183 IRS21834 IR21834 IRS2184 IR2184 IR21844 IRS21844 IR2114SS 2EDL23N06PJ 2EDL23I06P IRS2007M , IRS2007S NEW IRS2008M , IRS2008S NEW 2EDL8112G * 2EDL8113G * 2EDL8114G * Technology Voltage class [V] CT JI SOI SOI SOI SOI SOI SOI SOI SOI SOI SOI SOI SOI CT JI SOI SOI JI JI JI JI JI Features JI JI JI JI JI JI JI JI JI JI JI JI JI JI JI JI JI JI Packag JI SOI JI JI JI JI JI JI SOI SOI SOI JI JI JI JI JI JI JI JI JI JI JI www.infineon.com/gdfinder * Coming soon * * For more information on the product, contact our product support 500-950 V MOSFETs To load WBG semiconductors VS COM LO Discrete IGBTs HO SD Power ICs IN Intelligent switches and input ICs IN SD Gate driver ICs VB Microcontrollers Up to 1200 V VCC Packages VCC XENSIVTM sensors Typical connection Comparator Operational amplifier Desaturation protection Enable Fault reporting Integrated bootstrap diode Over-current protection Programmable dead time Programmable shutdown Self-oscillating (oscillator) Separate pin for logic ground Shoot-through protection Shutdown Soft over-current shutdown DSO-8 DSO-14 DSO-16 DSO-16 WB DSO-18 DIP-8 DIP-14 SSOP-24 VDSON-8 VQFN-14 CHIP1 Half-bridge gate driver ICs For more details on the product, click on the part number. 307 Gate driver ICs portfolio High-side and low-side gate driver ICs Typical connection Voltage class [V] 1200 IO+/IOtyp. [mA] 2000/2500 UVLO on/off typ. [V] 10.2/9.3 Prop delay off/on typ. [ns] 225/280 290/700 9.1/8.2 650 200/200 2500/2500 290/600 8.9/8 90/90 2500/2500 8.9/8.2 210/360 250/500 290/600 600 1900/2300 2500/2500 290/600 200 1000/1000 3000/3000 2ED21064S06J NEW SOI 2ED2181S06 NEW SOI 2ED21814S06J NEW SOI 2ED2101S06 * SOI 2ED2110S06 * SOI 2ED2113S06 * SOI 8.9/8.2 IR25604S JI 4.1/3.8 IR25607S JI IR2101 JI IR2102 JI 150/160 8.6/8.2 105/125 IR2112 JI 8.6/8.2 130/135 IRS2112 JI 8.9/8.2 150/160 IRS2101 JI 8.9/8.2 12.5/11.6 200/220 400/420 IRS2106 JI IRS21064 JI 2EDL05I06BF SOI JI 8.9/8.2 JI 8.9/8.2 IR2181 JI IR21814 JI 8.9/8.2 IRS21814 JI 8.6/8.2 IR2113 JI IR25607S JI IRS2113 JI IRS2186 JI 170/170 IRS21864 JI IRS21867S JI 8.6/8.2 94/120 IR2110 JI 8.5/8.2 120/130 IRS2110 JI 150/160 IRS2005S , IRS2005M JI 8.6/8.2 94/120 120/130 8.9/8.2 8.9/8.2 IRS2181 220/180 8.9/8.2 8.9/8.2 JI 6/5.5 2500/2500 SOI IR2301 200/220 8.9/8.2 500 NEW IR21064 4.1/3.8 8.5/8.2 4000/4000 JI 2ED2106S06F Package JI 8.9/8.2 360/700 IR2213 Features IR2106 8.9/8.2 200/350 Base PN 9/8.2 60/60 IRS2011 JI 75/80 IR2011 JI 8.6/8.2 65/95 IR2010 JI www.infineon.com/gatedriver www.infineon.com/gdfinder 308 9/8.2 *Coming soon * *For more information on the product, contact our product support CHIP1 To load COM LO VQFN-14 VS DIP-14 LIN DIP-8 LIN DSO-16 WB HO DSO-14 HIN DSO-8 HIN Shutdown VB Technology VCC Separate pin for logic ground Up to 1200 V Integrated bootstrap diode VCC For more details on the product, click on the part number. 20-300 V MOSFETs Three-phase gate driver ICs Applications Gate driver ICs portfolio Typical connection DC+ bus VCC 500-950 V MOSFETs HIN LIN EN VSS To load COM Voltage class [V] IO+/IOtyp. [mA] 350/650 1200 250/500 350/540 UVLO on/off typ. [V] 11.4/10.4 8.6/8.2 10.4/9.4 11.2/10.2 11.7/9.8 165/375 11.7/9.8 9/8.1 Prop delay off/on typ. [ns] 600/600 700/750 550/550 490/530 530/530 8.9/8.2 11.1/10.9 11.1/10.9 400/425 8.9/8.2 10.4/9.4 600 200/350 530/500 11.1/10.9 8.9/8.2 8.9/8.2 530/530 8.9/8.2 8.9/8.2 250/500 SOI IR2235 JI IR2238Q 6ED003L06-F2 6EDL04I06NT , 6EDL04I06PT 6EDL04N06PT JI SOI SOI SOI JI JI IR2136 IR21363J , IR21363S IR21365S JI IR21368S JI IR21364S IRS2334M , IRS2334S IRS2336S IRS2336DJ , IRS2336DM , IRS2336DS IRS23364DJ , IRS23364DS IRS23365DM JI JI JI JI JI JI IR2130, IR2132 JI 8.7/8.3 600/1300 IR2131 JI IR2133 JI IR2135J , IR2135S JI 700/750 JI 425/675 8.6/8.2 Package 11.7/9.8 490/530 6ED003L02-F2 SOI 9/8.1 530/530 6EDL04N02PR SOI XENSIVTM sensors Microcontrollers 165/375 6ED2230S12T NEW Features IR2233 9/8.7 10.4/9.4 200 Base PN Technology DC- bus WBG semiconductors LO (x3) Discrete IGBTs VS (x3) ITRIP Power ICs RCIN Intelligent switches and input ICs HO (x3) Gate driver ICs FAULT Brake chopper Operaltional amplifier Desaturation protection Enable Fault reporting Integrated bootstrap diode Over-current protection Programmable dead time Separate pin for logic ground Shoot-through protection Shutdown DSO-20 WB DSO-24 DSO-28 WB DIP-28 LCC-32 MQFP-64 TSSOP-28 VQFN-28 VQFN-34 CHIP1 VB (x3) Base PN * *For more information on the product, contact our product support Packages www.infineon.com/gatedriver www.infineon.com/gdfinder For more details on the product, click on the part number. 309 Gate driver ICs portfolio Single high-side gate driver ICs VCC Up to 200 V VCC VB Typical Connection Voltage class [V] IO+/IOtyp. [mA] HO IN VS UVLO on/off typ. [V] 1300/900 12/11.1 2000/2000 12/11 2200/2300 12/11.1 10/8 3000/3000 Prop delay off/on typ. [ns] 300/300 165/170 1750/1750 300/300 100/100 12.5/10.5 280/280 232/232 9.1/8.5 120/115 125/120 4000/3500 12/11.1 1200 to load 300/300 4400/4100 4000/4000 6000/6000 16.9/16.4 10/8 12.5/10.5 80/80 100/100 232/232 5900/6200 12/11.1 300/300 7500/6800 SRC/2000 SRC/2000 SRC/2000 9000/9000 11.9/11 11.9/11 11.9/11 10/8 12.5/10.5 460/460 460/460 460/460 100/100 232/232 125/120 10000/9400 160/240 600 250/500 650 250 300/300 9/8 215/140 8.6/8.2 105/125 1600/3300 10.3/9 7.2/6.8 8.6/8.2 10.3/9 7.2/6.8 9.2/8.3 160/240 9/8 215/140 4000/8000 4000/8000 4000/8000 4.5/5.0 4.5/5.0 4.5/5.0 41/37 41/37 41/37 290/600 500 200 100 12/11.1 150/200 105/125 150/150 200/170 Technology IN COM Base PN 1EDI05I12AF , 1EDI05I12AH 1EDC05I12AH 1ED020I12-F2 1ED020I12-B2 1ED020I12-FT 1ED020I12-BT 1EDI10I12MF , 1EDI10I12MH 1EDC10I12MH 1ED3120MU12 * 1ED3121MU12 * 1ED3131MU12 * 1ED3431MU12 * * 1ED3830MU12 * * 1EDI20N12AF 1EDI20H12AH 1EDC20H12AH 1EDI20I12AF , 1EDI20I12AH 1EDC20I12AH 1EDI20I12MH , 1EDI20I12MF 1EDC20I12MH 1EDI30J12CP 1ED3122MU12 * 1ED3125MU12 * 1ED3461MU12 * * 1ED3860MU12 * * 1EDI30I12MF , 1EDI30I12MH 1EDC30I12MH 1EDI40I12AH , 1EDI40I12AF 1EDC40I12AH 1EDI20I12SV 1EDU20I12SV 1EDS20I12SV 1ED3123MU12 * 1ED3124MU12 * 1ED3491MU12 * * 1ED3890MU12 * * 1EDI60H12AH 1EDC60H12AH 1EDI60I12AF , 1EDI60I12AH 1EDC60I12AH IRS25752L IR2117 IR2118 IR2127 , IR2128 IR21271 IRS2117 , IRS2118 IRS2127 IRS21271 IR2125 IRS20752L IRS10752L 1EDS5663H 1EDF5673F 1EDF5673K CT CT CT CT CT CT NEW NEW NEW NEW NEW NEW NEW NEW NEW CT CT CT CT CT CT CT CT CT CT CT CT CT CT CT CT CT CT CT CT CT CT CT CT CT CT CT CT CT CT CT CT CT CT JI JI JI JI JI JI JI JI JI JI JI CT CT CT Active Miller clamp Analog configurability(Desat, soft-off) Digital I2C configurability(16 parameters) Dedicated control for JFET Desaturation protection Enable Fault reporting Fault reset Over-current protection Separate pin for logic ground Separate sink/source outputs Soft over-current shutdown Two-level turn-off UL 1577 VDE 0884-10 DSO-8 DSO-8 300mil DSO-16 fine pitch 300 mil DSO-16 DSO-16 WB DSO-19 DSO-36 DIP-8 SOT23-6 TFLGA-13 CHIP1 Typical connection Digital I2C configurability (16 parameters) Features www.infineon.com/gatedriver www.infineon.com/gdfinder 310 SRC=Turn on slew rate control * Coming soon * * For more information on the product, contact our product support For more details on the product, click on the part number. a 20-300 V MOSFETs Dual high-side/half-bridge Typical connection Up to 1200 V 650 250 2000/2000 4000/8000 1000/2000 4000/8000 1000/2000 Prop delay off/on typ. [ns] 12/11 165/170 4.2/3.9 8/7 4000/8000 37 / 37 4.2/3.9 2ED020I12-F2 2EDF7275F 2EDF7175F 2EDS8265H 2EDS8165H 2EDF7235K 2EDF7275K CT CT CT CT CT CT CT Features 500-950 V MOSFETs TFLGA-13 Base PN WBG semiconductors UVLO on/off typ. [V] To load DSO-36 (w/o 4 pins) VS 1 DSO-16 WB COM DSO-16 HO 1 VDE 0884-10 VB 1 VCC UL 1577 NC Up to 1200 V Package Discrete IGBTs 1200 IO+/IOtyp. [mA] NC Power ICs Voltage class [V] NC NC Separate pin for logic ground 15 V VSS To load Fault reset VS 2 Fault reporting HO 2 HIN 2 Disable HIN 1 IN 2 Desaturation protection IN 1 Deadtime control VB 2 Active Miller clamp VDD Technology 5V 200 1000/4000 2000/7000 1000/2500 80 4000/8000 2600/2600 25 800/1750 1500/1500 300/550 1700/1500 20 4000/8000 5 1600/3300 UVLO on/off typ. [V] 10.55/9 10.55/9 4.5/4.4 4.2/3.9 8/7 8/7.3 11.9/11.4 11.9/11.4 10.2/9.2 5/4.15 5/4.15 5/4.15 4.2/3.9 8/7 4.2/3.9 8.9/8 Prop delay off/on typ. [ns] 50/60 50/60 50/50 45 / 45 45 / 45 34/34 50/50 50/50 50/50 50/50 50/50 19/19 200/150 Base PN IR11662 IR11672A IR1161L 1EDN7550 1EDN8550 1ED44173N01 * * 1ED44175N01 1ED44176N01F IRS44273L IR44252L IR44272L IR44273L 1EDN7511B 1EDN8511 1EDN7512B , 1EDN7512G IR2121 NEW NEW NEW NEW NEW Features N-ISO N-ISO N-ISO N-ISO N-ISO N-ISO N-ISO N-ISO N-ISO N-ISO N-ISO N-ISO N-ISO N-ISO N-ISO N-ISO Intelligent switches and input ICs OUT Package Gate driver ICs IO+/IOtyp. [mA] COM Microcontrollers Voltage class [V] VCC Technology To load IN XENSIVTM sensors Typical connection Automatic minimum on time protection Enable Fault reporting Over-current protection Programmable fault clear time Programmable minimum on time Separate sink/source outputs Synchronous rectification Truly differential inputs DSO-8 DIP-8 SOT23-5 SOT23-6 WSON-6 Single low-side gate driver ICs IN Packages www.infineon.com/gatedriver www.infineon.com/gdfinder * Coming soon * * For more information on the product, contact our product support Applications Gate driver ICs portfolio For more details on the product, click on the part number. 311 Gate driver ICs portfolio Dual low-side gate driver ICs Voltage class [V] IO+/IOtyp. [mA] 200 UVLO on/off typ. [V] Prop delay off/on typ. [ns] 8.1/7.6 70/60 IR1168 N-ISO 8.1/7.6 80/100 IR11682 N-ISO 1000/4000 4.55/4.35 60/250 IR11688S N-ISO 1000/1000 11.5/10 55/55 2ED24427N01 * N-ISO IRS44262S N-ISO 50/50 IRS4426S N-ISO N.A. 65/85 5000/5000 4000/4000 4.2/3.9 8/7 4.2/3.9 19/19 19/19 TSSOP-8 Package 1000/4000 2300/3300 20 Features 1000/4000 10.2/9.2 25 Base PN WSON-8 OUTB Technology INB INB VCC DIP-8 To load COM DSO-8 OUTA Synchronous rectification INA Programmable minimum on time INA NC Enable To load NC Automatic minimum on time protection Typical connection IRS4427 N-ISO IR25600 N-ISO IR4426 , IR4427 N-ISO 2EDN7523 , 2EDN7524 N-ISO 2EDN8523F , 2EDN8523R , 2EDN8524F , 2EDN8524R N-ISO 2EDN7424R , 2EDN7424F N-ISO Full-bridge gate driver ICs Typical connection VBUSS (100 VDC MAX.) Voltage class [V] 100 600 IO+/IOtyp. [mA] 1200/1200 180/260 UVLO on/off typ. [V] 7.25/6.8 11/9 Prop delay off/on typ. [ns] 40/60 N.A. JI IRS24531DS JI IRS2453D JI Package www.infineon.com/gatedriver www.infineon.com/gdfinder *Coming soon 312 DIP-14 IR2086S Features DSO-16 DSO-14 Self-oscillating (oscillator) Base PN Technology *COM2 must be shorted to COM1 for proper operation **CD is optional Programmable dead time RSENSE Overcurrent protection CD** Shutdown CT Shoot-through protection IR2086S VB1 HO1 CS VS1 DELAY CT COM2* COM1 LO2 VS2 LO1 VCC HO2 VB2 RT Integrated bootstrap diode VCC (9 ~15 V) For more details on the product, click on the part number. 20-300 V MOSFETs Complementary: current sense ICs Applications Gate driver ICs portfolio Typical connection Voltage class [V] IR2175 IR25750 JI JI Features Package Discrete IGBTs 600 Base PN Current sense COM Technology COM To motor phase 500-950 V MOSFETs VS WBG semiconductors OC SOT23-5 Overcurrent DIP-8 VB DSO-16 WB V+ PO DSO-8 VCC PWM out Overcurrent protection VCC Complementary: high-voltage start-up IC Typical connection VTH 3 ENN 4 Voltage class [V] N-ISO Enable IRS25751 Features Package XENSIVTM sensors Microcontrollers Gate driver ICs 480 Base PN Technology DC bus (-) Intelligent switches and input ICs R2 VIN 5 COM 2 SOT23-5 VOUT 1 R1 CVCC VCC (-) Overtemperature shutdown VCC (+) High voltage start-up From AUX supply Power ICs DC bus (+) Packages www.infineon.com/gatedriver www.infineon.com/gdfinder For more details on the product, click on the part number. 313 Gate driver ICs nomenclature Nomenclature Naming convention for existing families of gate driver ICs AU IR 21 10 D S Package type S = SOIC J = PLCC44 M = MLPQ Q = MFQP L = SOT-23 B/F = die part Blank: PDIP Automotive rating Technology generation IR = Gen2 high-voltage driver IC IRS = Gen5 high-voltage driver IC Voltage class 20 = 200 V 21 = 600 V 22 = 1200 V 23 = 600 V 26 = 600 V feature adder 44 = low-side driver Additional features D = bootstrap Blank = without bootstrap Driver type 3 = 3-phase driver 7 = current-sense IC Other: half-bridge, high-side/low-side, etc. 1ED I Number of channels 1 = 1-ch EiceDRIVERTM 2 = 2-ch (half-bridge) EiceDRIVERTM 6 = 6-ch (3-phase) EiceDRIVERTM Isolation technology S = reinforced galvanic isolation B = basic galvanic isolation I = functional galvanic isolation C = UL certified functional galvanic isolation L = level-shifting (SOI) N = non-isolated driver Minimum drive strength in hundreds of milliamps Optimal switch Type H = high-speed IGBT I = IGBT J= JFET N = MOSFET 60 I 12 A F Package type F = DSO8-150 mil H = DSO8-300 mil Key features A = separate sink/source B = Bootstrap diode D = DESAT M = active Miller clamp S = Slew rate control T = two-level turn-off Voltage class 06 = 600 V 12 = 1200 V For more details on the product, click on the part number. 314 ED 2304 S[x] 06 500-950 V MOSFETs Naming convention for existing and upcoming families of gate driver ICs F ED = EiceDRIVERTM Product number/voltage Flexible Technology indicator M = Coreless transformer (inductive) N = Non-isolated driver (low-side drivers) J = Junction level shifting (non-SOI) [x] Optional S = Infineon SOI C = Isolation-certified S = Reinforced isolation B = Basic Isolation U/C = UL 1577-certified WBG semiconductors Package type F = DSO8-150 mil H = DSO8-300 mil C = Bare die single chip J = SO14-150 mil M = SO16-300 mil P = SO20-300 mil R = TSSOP28-140 mil T = SO28-300 mil V = SO36-300 mil Number of channels 1 = 1-ch 2 = 2-ch (half-bridge, hi/low) 6 = 6-ch (3-phase) Voltage class 01 = <200 V 02 = 200 V 06 = 600 V/650 V 07 = 700 V 12 = 1200 V 16 = 1600 V 17 = 1700 V Power ICs Discrete IGBTs 2 Applications 20-300 V MOSFETs Gate driver ICs nomenclature ED N 4 F Gate driver ICs Microcontrollers Control Inputs 3 = inverted 4 = non-inverted 5 = mixed 6 = differential Family ID xx = 2 digits XENSIVTM sensors { "i" used to designate any type of galvanic isolation Packages ED = EiceDRIVERTM UVLO threshold 6 = reserved 7 = ~ 4.2 V 8=~8V 9 = reserved 52 Package F = DSO 150 mil, 1.27 mm H = DSO 300 mil, 1.27 mm B = SOT-23 G = VDSON R = TSSOP ("mini DSO-8") K = LGA Number of channels Isolation class N = non-isolated F = functional isolation B = basic isolation S = reinforced isolation 7 Intelligent switches and input ICs 2 For more details on the product, click on the part number. 315 Gate driver ICs support Gate driver selection tool To simplify the gate driver selection process, Infineon offers an online easy-to-use gate driver selection tool. By selecting a few key parameters, the tool quickly guides you in finding the right driver for your application. Click to access the gate driver selection tool www.infineon.com/gdfinder For recommended gate drivers by application, visit www.infineon.com/gdapplication to download the PDF version of the gate driver application matrix. Home Appliances Industrial Discover the next level of power and efficiency Reliable, high quality solutions for the most rugged situations Infineon's gate driver ICs utilize level-shift silicon-on-insulator technology (SOI), and level-shift junction isolation technology (JI) to meet the high performance requirements in home appliance applications. Infineon's gate driver ICs are the expert's choice. With the breadth and depth of the portfolio, customers can quickly design and build efficient and robust systems for every industrial application. Automatic opening system Recommended Gate Drivers Charger Recommended Gate Drivers Home Appliances General Industrial Air Conditioner (Residential) IRS4427S IRS44273L 2EDN8524F 2EDN8524F IRS4427S IRS2153(1)D PFC SMPS ICE5QR4770AZ (CoolSETTM) DC-DC 1EDI20N12AF Commercial Lighting Hood Fan/ Ceiling Fan/ Freezer Fan Power Tools (AC) IRS44273L 2EDN8524F 1EDN8511B Refrigerator/ Washer/ Dryer Vacuum Cleaner IRS4427S IRS44273L 2EDN8524F 6EDL04N02PR IRS2007S IRS2301S 6EDL04I06PT IR2136S 2ED2304S06F 6EDL04I06PT IR2136S 2EDL05I06PF 6EDL04I06PT IRS2890DS 2ED2304S06F 2EDL05I06PF IRS2181(4) IRS2890DS SR Motor Inverter 2EDL05N06PF 2ED2304S06F IRS2153(1)D 6EDL04I06PT IR2136S IRS2103 Inverter (<5 kW) 6EDL04(I,N)06PT 2EDL23I06PJ IR2214SS 1EDI30I12MF 1EDI60I12AF 1EDU20I12SV 6EDL04I06PT IR2136S IRS2334 Inverter (<200 kW) Drives Forklift Truck/ CAV 6EDL04I06PT IR2133 2EDL23I06PJ 1EDI40I12AF 1ED020I12-BT 2ED020I12-FI 1EDI60N12AF 2EDL23I06PJ IRS2127(1) 1EDI60I12AF 1ED020I12-B2 1EDU20I12SV 1EDU20I12SV 1ED020I12-B2 1EDI60I12AF 2EDN8524F IR7106S IRS2186(4) 1EDI05I12AF 1EDI10I12MF IRS44273L 2ED020I12-F2 1ED020I12-F2 1ED020I12-FT Mobility & Battery Driven Renewable Energy Full range of best-in-class components Powering an energy-smart world For battery-driven applications, saving battery power is the key. Infineon offers an excellent selection of gate driver ICs providing thehighest-possible energy efficiency and top precision. 1EDI60I12AF 1ED020I12-F2 1EDU20I12SV IRS4427S IRS44273L 2EDN8524F 2EDL05N06PJ 2EDL23N06PJ 1EDI20N12AF 1EDI60N12AF IRS4427S IRS44273L 2EDN7524F DC-DC (1 kW - 100 kW) Active Bridge Rectifier From EV charger and light electric vehicle (LEV) to service robotics and drones, Infineon's family of configurable half-bridge and three-phase gate driver ICs can be combined with powerful Infineon MOSFETs to provide the required power and efficiency. Automotive-specific gate drivers qualified according to AEC-Q100 are also available. UPS 1EDI60I12AF 2EDL23I06PJ IR7106S IRS4427S IRS44273L 2EDN8524F Brake Chopper 2EDL05N06PF 2ED2304S06F Sync-Buck Commercial Sewing Machine SMPS IRS2117 IRS25752L IRS20752L HS-Buck Building Fans & Pumps 1ED020I12-F2 1EDI10I12MF 2ED020I12-F2 Compressor/ Fan/CAC PFC IR2235 2EDL23I06PJ IR2214SS Inverter (<3 kW) Half-bridge Topology Automatic Door Opening Systems Inverter (<30 kW) 6EDL04I06PT IR2136S IRS2890DS 2ED2304S06F Inverter (<1 kW) Electric Tools (Battery) Air Conditioner (Commercial) Improving efficiency is the number one objective in the field of photovoltaics. Efficiency gains of as little as one percent can still yield enormous returns in renewable energy segment. Infineon provides a comprehensive portfolio of high-performance gate driver ICs for photovoltaic inverters. By combining EiceDRIVERTM with super-junction MOSFETs such as CoolMOSTM, IGBTs, Silicon Carbide (SiC) MOSFET such as CoolSiCTM, as well as IGBT and SiC modules, Infineon enables solutions that maximizing uptime and energy production. Recommended Gate Drivers Renewable Energy Heat Pump 6EDL04I06PT IR2136S 2ED2304S06F IR2214SS IR2213 IR2235 1EDI20I12AF Inverter (<2 kW) Charger Recommended Gate Drivers Mobility & Battery Driven Inverter DC-DC PFC HB (LLC) Sync-Buck Drones/ E-Bike/ E-Scooter 6EDL04N02PR IRS2334 IRS2007S EV Charger/ Battery Charger IRS2186S General Traction 1EDI60I12AF IR2214SS IR2213 Light Electric Vehicle (LEV) 6EDL04N02PR IR2136S 2EDL05N06PF IRS2183 Lawn Mower/ Vacuum/ Service Robotics Inverter Boost Inverter DC-AC 6EDL04N02PR 1EDI20I12AF 1EDI40I12AF IR2214SS IRS4427S IRS44273L 2EDN7524F 1EDI60I12AF 1EDU20I12SV IR2010S BLDC Inverter (>2 kW) 6EDL04N02PR IR2136S IRS2007S String Boost String Inverter Central Boost/SMPS Central Inverter Solar Inverter IRS4427S 2EDN7524F IRS44273L 2ED2304S06F IR2114SS 2EDL05N06PJ 2EDN8524F IRS4427S 1EDI20N12AF 1ED020I12-F2 IR7106S 1EDI60N12AF 2EDN8524F 1EDI60I12AF 1EDI60I12AF 1ED020I12-F2 IR2214SS www.infineon.com/gatedriver www.infineon.com/gdfinder For more details on the product, click on the part number. 316 Applications Power ICs Discrete IGBTs WBG semiconductors 500-950 V MOSFETs 20-300 V MOSFETs Gate driver ICs support Intelligent switches and input ICs Infineon support for gate driver ICs Useful links and helpful information XENSIVTM sensors Microcontrollers Gate driver ICs www.infineon.com/200vhvic www.infineon.com/1EDcompact www.infineon.com/700vhvic www.infineon.com/microhvic www.infineon.com/gan-eicedriver www.infineon.com/2edi Packages Further information, datasheets and documents www.infineon.com/gatedriver www.infineon.com/1edn www.infineon.com/gdapplication www.infineon.com/2edn www.infineon.com/gdiso www.infineon.com/gdbrochure www.infineon.com/ifxdesigner www.infineon.com/gdfinder www.infineon.com/crs www.infineon.com/SiC-GD www.infineon.com/eicedriver www.infineon.com/TDI For more details on the product, click on the part number. 317 Microcontrollers XMCTM micricontrollers XMCTM ecosystem, enablement and partners XMCTM digital power conversion kits XMCTM starter kits XMCTM peripherals AURIXTM - 32-bit microcontrollers AURIXTM TC2xx family system architecture AURIXTM TC3xx family system architecture AURIXTM starter and application kits AURIXTM and XMCTM PDH partners Embedded power ICs BLDC Motor Control Shield for Arduino For more details on the product, click on the part number. 318 Packages For more details on the product, click on the part number. 319 XENSIVTM sensors Microcontrollers Gate driver ICs Intelligent switches and input ICs Power ICs Discrete IGBTs WBG semiconductors 500-950 V MOSFETs 20-300 V MOSFETs Applications XMCTM microcontrollers XMCTM One microcontroller platform - countless solutions Infineon's XMCTM 32-bit industrial microcontroller portfolio is designed for efficiency and demanding industrial applications. XMCTM MCU portfolio RAM: 8 kB up to 352 kB Flash: 16 kB up to 2 MB Accurate analog mixed-signal peripherals Fast timer/PWM peripherals Rich communication interfaces 16-pin to 196-pin count packages XMC1000 family Arm(R) Cortex(R)-M0 up to 48 MHz Peripherals up to 96 MHz One-time event request unit (ERU) VDD: 1.8 to 5.5 V TAmbient: -40C to 105C Arm(R) Cortex(R) M XMC4000 family Arm(R) Cortex(R)-M4 up to 144 MHz Built-in DSP, SFPU Peripherals up to 144 MHz Event request unit (ERU) TAmbient: -40C to 125C TriCoreTM AURIXTM AURIXTM XMC4000 2nd generation 1st generation XMC1000 Embedded Power ICs Performance XMC1000 XMC4000 AURIXTM 1st generation AURIXTM 2nd generation Embedded Power ICs (System-on-Chip) Arm(R) Cortex(R)-M CPU up to 40 MHz Flash: 36-128 kB Package: 48 pins XMC1000 XMC4000 AURIXTM TC2x1) AURIXTM TC3x1) Arm(R) Cortex(R)-M0 CPU up to 48 MHz Flash: 8-200 kB Package: 16-64 pins Arm(R) Cortex(R)-M4F CPU up to 144 MHz Flash: 64 kB-2 MB Package: 48-196 pins TriCoreTM Up to 3x multicore CPU up to 300 MHz Flash: 0.5-8 MB Package: 80-516 pins TriCoreTM Up to 6x multicore CPU up to 300 MHz Flash: 1-16 MB Package: 100-516 pins Consumer and industrial Embedded power ICs Integration 1) AURIXTM devices add safety and CAN FD XMC4000 Arm(R) Cortex(R)-M4F up to 144 MHz core 64 kB-2 MB Flash up to 125C XMC4800, XMC4300 Industrial drives, Hall and encoder I/F, demodulator, LQFP-100/144 LFBGA-196 EtherCAT, +drives MultiCAN - 6 nodes LQFP-100/144 LFGBGA-196 XMC4100 XMC4200 XMC4100/XMC4400 XMC4500 Basic control and connectivity VQFN-48 LQFP-64 Server power 150 ps HRPWM LQFP-64/100 Industrial drives, Hall and encoder I/F, demodulator, LQFP-64/100/144 LFBGA-144 MultiCAN - 3 nodes, Ethernet, +drives ext. memory, SD/MMC LQFP-100/144 LFBGA-144 XMC1000 Arm(R) Cortex(R)-M0 up to 48 MHz core/ 96 MHz peripheral 8-200 KB flash up to 105C 1.8-5.5 V XMC4700/4800 XMC1400 XMC1400 XMC1400 XMC1400 Flicker-free, 4-Ch LED, SMPS, connectivity VQFN-40/64 LQFP-64 SMPS control, connectivity VQFN-40/64 LQFP-64 Hall and encoder I/F, MATH co-processor, CAN VQFN-40/64 LQFP-64 Multi CAN - 2 nodes VQFN-48/64 LQFP-64 XMC1100 XMC1200, XMC1300 XMC1300 XMC1300 Basic control and connectivity TSSOP-16/38 VQFN-24/40 Flicker-free, 4-Ch LED, SMPS, connectivity TSSOP-16/28/38 VQFN-24, -40 SMPS control, connectivity, TSSOP-16/38 VQFN-24/40 Hall and encoder I/F, MATH co-processor, TSSOP-16/38 VQFN-24/40 XMCTM entry LED lighting Digital power Motor control Industrial I/O www.infineon.com/xmc For more details on the product, click on the part number. 320 Applications 20-300 V MOSFETs 500-950 V MOSFETs WBG semiconductors Discrete IGBTs XMCTM ecosystem, enablement and partners Intelligent switches and input ICs From evaluation to production Third parties Hand-in-hand with third party tools Idea Low-level driver library/ APIs for peripherals DAVETM Apps Examples Graphicalconfigurable applicationoriented software components XMCTM Lib and DAVETM Apps composed to create more complex applications Product Gate driver ICs XMCTM Lib DAVETM Professional free-of-charge IDE XMCTM 32-bit industrial microcontroller portfolio Microcontrollers Infineon enablement for XMCTM MCUs DAVETM - www.infineon.com/dave Professional and free-of-charge development platform XMCTM library for Embedded Coder(R) - www.infineon.com/matlab Model-based design from MATLAB(R) and Simulink(R) environment, download free of charge IEC60730 class B library for XMCTM - www.infineon.com/iec60730 Available for XMCTM industrial microcontrollers free of charge Microcontroller/ProbeTM XMCTM - www.infineon.com/ucprobexmc Free-of-charge version of microcontroller/ProbeTM for XMCTM MCUs to build user interfaces for visualizing, observing, and control of the internals of XMCTM MCUs XMCTM link - www.infineon.com/xmclink Functional isolated debug probe, based on SEGGER J-Link technology Power ICs A comprehensive set of tools, products, components, and services are available for fast and efficient design with XMCTM microcontrollers. Packages XENSIVTM sensors In addition to a rich third party ecosystem and enablement landscape, which support the entire development cycle from evaluation to production. For more www.infineon.com/xmc-ecosystem For more details on the product, click on the part number. 321 XMCTM microcontrollers Infineon's XMCTM 32-bit industrial microcontroller portfolio is designed for system cost and efficiency for demanding industrial applications. It comes with the most advanced peripheral set in the industry. Fast and largely autonomous peripherals can be configured to support individual needs. Highlights include analog mixed-signal, timer/PWM and communication peripherals powered by either an Arm(R) Cortex(R)-M0 core (XMC1000 family) or an Arm(R) Cortex(R)-M4 core with a floating point unit (XMC4000 family). 64 48 96 CAN 2.0B 32 US IC BCCU 64 POS IF 32 CCU8 (4 ch) - Flash 8-64 kB RAM 16 kB Flash 16-200 kB RAM 16 kB Flash 8-200 kB RAM 16 kB Flash 32-200 kB RAM 16 kB Package 1/1 Up to 12 - 1x - - - 2x - VQFN 24/40 TSSOP 16/38 1/2 Up to 12 Up to 3 1x - - 2x - VQFN 24/40 TSSOP 16/28/38 1/2 Up to 12 Up to 3 1x 1x 2x - VQFN 24/40 TSSOP 16/38 1/2 Up to 12 Up to 4 2x 2x 4x VQFN 40/48/64 LQFP 64 ADC1 2-bit/S&H 64 Connectivity CCU4 (4 ch) XMC14x 32 Timer/PWM Analog comparators XMC13x - Analog Number of channels XMC12x Peripherals XMC11x Frequency Arm(R) Cortex(R)-M0 Memory Co-processor Clocks Supply voltage range 1.8-5.5 V Temperature range -40C ... 85C/105C 80 kB Flash 512 kB-1 MB RAM 128-160 kB Flash 1.5-2 MB RAM 276-352 kB Flash 1-2 MB RAM 276-352 kB 2/2 Up to 9 2 ch 2x 1x - 4x Up to 2 - - - - VQFN 48 TQFP 64 2/2 Up to 9 2 ch 2x 1x - 4x 2x - - - - VQFN 48 TQFP 64 2/2 14 2 ch 2x 1x - - - 4x 2x - LQFP 100 4/4 Up to 18 2 ch 4x 2x 2x 4ch 4x 2x - - - TQFP 64 LQFP 100 4/4 Up to 26 2 ch 4x 2x - 2x 4 ch 4x Up to 3 - LQFP 100/144 LFBGA 144 4/4 Up to 26 2 ch 4x 2x - 2x 4 ch 6x 6x - LQFP 100/144 LFBGA 196 4/4 Up to 26 2 ch 4x 2x - 2x 4 ch 6x 6x LQFP 100/144 LFBGA 196 CAN 2.0B External BUS Unit (EBU) RAM SDIO/SD/MMC Flash 256-512 kB EtherCAT(R) 128 kB Ethernet 144 256 kB RAM USB XMC48x 144 Flash US IC XMC47x 40 kB Demodulator 120 256 kB RAM POSIF XMC45x Flash HRPWM (150 ps) 120 20 kB CCU8 (4 ch) XMC44x 144 64-128 kB RAM Package CCU4 (4 ch) XMC43x 80 Flash Connectivity DAC1 2-bit XMC42x 80 Timer/PWM Number of channels XMC41x Analog ADC1 2-bit/S&H Arm(R) Cortex(R)-M0 Frequency [MHz] Memory Supply voltage range 3.1-3.6 V Temperature range -40C ... 85C/125C www.infineon.com/xmc www.infineon.com/dave For more details on the product, click on the part number. 322 Applications 20-300 V MOSFETs 500-950 V MOSFETs WBG semiconductors Discrete IGBTs XMCTM digital power explorer kit Intelligent switches and input ICs Power ICs The new digital power explorer kit is designed with the particular goal of making it easy for engineers to take the first steps into digital power control with XMCTM microcontrollers. It showcases both XMCTM families Arm(R) Cortex-M microcontrollers: XMC4000 and XMC1000, 30V dual n-channel OptiMOSTM MOSFETs and IRS2011S gate drivers. The kit includes two different control card options, XMC1300 control card (Arm(R) Cortex(R)-M0) and XMC4200 control card (Arm(R) Cortex(R)-M4F), which allow designers to evaluate both XMCTM microcontroller families and make the right price/performance choice for their application. Features and benefits Key features Key benefits Synchronous buck converter evaluation kit controlled with XMC4200 or XMC1300 Arm(R) Cortex(R)-M MCUs Easy entry in digital power control applications Understand the details of voltage/peak current control and how to extract the maximum of XMCTM devices Featuring BSC0924NDI dual n-channel OptiMOSTM MOSFET and IRS2011S high- and low-side gate driver DAVETM v4 APPs for buck converter and many more example Gate driver ICs Onboard resistive load banks XENSIVTM sensors Microcontrollers Different control schemes possible Voltage mode control Peak current mode control (with slope compensation) Packages www.infineon.com/xmc For more details on the product, click on the part number. 323 XMCTM power conversion kits High power density 800 W 130 kHz platinum server design with XMC1300 The 800 W PFC CCM evaluation board demonstrates design and practical results of an 800 W 130 kHz platinum server PFC evaluation board based on Infineon devices, in terms of power semiconductors, non-isolated gate drivers, analog and digital controllers for the PFC converter, as well as flyback controller for the auxiliary supply. This evaluation board verifies the performance of the latest 600V CoolMOSTM C7 superjunction MOSFET technology working at 130 kHz in a PFC CCM boost converter along with EiceDRIVERTM ICs and CoolSiCTM Schottky diode 650 V G5 using digital control. Features and benefits Key features Customer benefits Classic PFC boost stage digitally controlled with XMC1302 including voltage and current loops High efficient PFC stage with a complete systemsolution from Infineon HW and SW available Protections, including cycle-by-cycle current protection Higher switching frequency permits higher power density Run time debug with isolated UART to PC interface and PC software 800 W PFC CCM with XMC1300 Specification Infineon components Vin 90-265 VAC MCU XMC1302 (TSSOP38) Vout_nom 380VDC MOSFET 600 V CoolMOSTM C7 Iout 2A MOSFET driver EiceDRIVERTM 2EDN7524F non-isolated PWM frequency 130 kHz Diode CoolSiCTM Schottky diode 650 V G5 THD <10% Auxiliary PSU ICE2QR4780Z Power factor >0.9 from 20% load Efficiency 97% (peak) 600 W half-bridge LLC evaluation board with 600 V CoolMOSTM C7 SJ MOSFET with digital control The 600 W LLC digital control evaluation board shows how to design the half-bridge LLC stage of a server SMPS with the target to meet 80+ Titanium standard efficiency requirements. For this purpose, the latest CoolMOSTM technologies, 600V CoolMOSTM C7 or P6 superjunction MOSFETs have been used on the primary side, and OptiMOSTM low voltage power MOSFET in SuperSO8, BSC010N04LS, in the synchronous rectification secondary stage in combination with QR CoolSETTM ICE2QR2280Z, high- and low-side driver 2EDL05N06PF, low-side gate driver 2EDN7524F and a XMC4200 microcontroller. Features and benefits Key features Customer benefits 600 W LLC half-bridge stage with synchronous rectification (SR) Learn LLC topology with a complete system solution from Infineon HW and SW available All controlled with XMC4200 including: Start up (PWM to PFM) and burst-mode algorithms Adaptive dead time and capacitive-mode detection No hard commutation at any condition 600 W LLC digital control www.infineon.com/xmc Close to customer solution High efficiency 97.8% Reliability and power density Specification Infineon components Vin 350-410VDC MCU XMC4200 (VQFN48) Vout_nom 12 VDC MOSFET SR BSC010N04LS Iout 50 A HB driver 2EDL05N06PF Pout 600 W LLC HB MOSFET CoolMOSTM IPP60R190P6 fres 157 kHz Auxiliary PSU ICE2QR2280Z www.infineon.com/800w-pfc-eval www.infineon.com/600w-llc-eval For more details on the product, click on the part number. 324 20-300 V MOSFETs 3 kW dual-phase LLC converter using XMC4400 500-950 V MOSFETs The 3 kW dual-phase LLC demonstration board is an example of a high efficiency isolated DC-DC converter using the state-of-the-art Infineon components, both power devices and controller/driver ICs. The use of an advanced digital control using the XMC4400 microcontroller, together with the latest generation of CoolMOSTM and OptiMOSTM devices, allows achieving a very flat efficiency curve in the entire load range. The demonstration board is targeting the high voltage DC-DC stage of high-end telecom rectifiers. Customer benefits Full digital control by XMC4400 on the secondary side Full digital control by XMC4400 on the secondary side Digital current sharing with phase shedding Efficiency peak 98.5% and more than 97.2% in the entire load range Accurate algorithm able to prevent hard commutation and capacitive load mode in LLC operation Easy monitoring and parameter setting via a graphic user interface Infineon components Vin 350-410VDC MCU XMC4400 (LQFP64) Vout_nom 54.3 VDC SR MOSFET OptiMOSTM BSC093N15NS5 Iout_max 55 A Drivers 1EDI60N12AF 2EDN7524R Pout 3000 W LLC Half-bridge MOSFET CoolMOSTM P6 IPW60R041P6 frange 90-200 kHz Auxiliary PSU ICE2QR2280Z Peak efficiency >98.4% Discrete IGBTs Specification Power ICs 3 kW dual-phase LLC converter using XMC4400 WBG semiconductors Features and benefits Key features RGB LED lighting shield with XMC1202 for Arduino Intelligent switches and input ICs The RGB LED lighting shield with XMC1202 for Arduino uses a DC-DC buck topology and is able to drive up to three LED channels with constant current. The shield itself is powered by a programmable XMCTM 32-bit Arm(R) MCU with embedded brightness color control unit (BCCU, XMC1200 MCU series), for flicker-free LED dimming and color control. Gate driver ICs Features Compatible with Arduino Uno R3 and XMC1100 boot kit from Infineon Easily configurable for various light engines and any input voltage (within operating conditions) Wide DC input voltage range Simple I2C interface Microcontrollers Operating conditions Nominal: 12-48 V input voltage (max. 6-60V) Average LED current up to 700 mA (max. peak current 1 A) XENSIVTM sensors The Infineon shields mentioned above are hardware compatible with Arduino and Infineon's XMCTM boot and relax kits. www.infineon.com/3kw-llc-eval-p7-to247 Packages www.infineon.com/shields-for-arduino Applications XMCTM power conversion kits For more details on the product, click on the part number. 325 XMCTM power conversion kits 3 kW dual-phase LLC converter XMC4800 automation board V2 - explore XMC4800 microcontroller based on Arm(R) Cortex(R)-M4 The XMC4800 automation board V2 uses Infineon's industry leading XMCTM Arm(R) Cortex(R)-M4 microcontroller in combination with Infineon's supply, interface, communication and safety products. The XMC4800 automation board V2 is designed to evaluate the capabilities of the XMC4800 microcontroller especially in EtherCAT(R) slave applications and can be used with a wide range of development tools including Infineon's free-of-charge Eclipse based IDE, DAVETM. Features and benefits Key features Customer benefits XMC4800-E196 MCU based on Arm(R) Cortex(R)-M4 at 144 MHz Complete automation kit gateway EtherCAT(R) slave controller, 2 MB flash and 352 kB RAM Combined MCU with EtherCAT slave application OPTIGATM Trust E embedded security solution (CC EAL6+) Isolated interfaces with diagnose Real time clock crystal Ethernet connectivity with software examples available SPI FRAM (64 kB non-volatile memory) 24 V supply EtherCAT(R) slave node (2 EtherCAT(R) PHY and RJ45 Jacks) CAN connectivity 24 V ISOFACETM 8-channel inputs and 8-channel outputs CAN transceiver Full software DAVETM examples CAN transceiver XMC4800 automation board V2 Type Description OPN KIT_XMC48_AUT_BASE_V2 The XMC4800 automation board V2 utilizes Infineon's industry leading XMC Arm(R) Cortex(R)-M4 microcontroller in combination with Infineon's supply, interface/communication and safety products. KITXMC48AUTBASEV2TOBO1 XMC4800-E196K2048 Arm(R) Cortex(R)-M4 microcontroller XMC4800E196K2048AAXQMA1 ISO2H823V2.5 24 V 8-channel isolated output ISO2H823V25XUMA1 ISO1I813T 24 V 8-channel isolated input ISO1I813TXUMA1 SLS 32AIA020A4 USON10 OPTIGATM Trust E - embedded security solution SLS32AIA020A4USON10XTMA2 TLE6250GV33 Infineon CAN transceiver TLE6250GV33XUMA1 IFX54441LDV Infineon voltage regulator IFX54441LDVXUMA1 www.infineon.com/automationkit For more details on the product, click on the part number. 326 XMCTM wireless power controller - enabling wireless charging transmitter applications 500-950 V MOSFETs Infineon's XMCTM wireless power controller, based on the Arm(R) Cortex(R)-M0 core, provides a powerful and cost-effective platform for high performance, smart and safe wireless charging applications. The XMCTM wireless power controller helps the next-generation wireless charging systems to meet strict safety, environmental and regulatory requirements, while still enabling industry-leading charging performance and efficiency. This controller works seamlessly with Infineon's power devices in a scalable architecture to provide a complete charging solution for everything from a fast-charge smartphone, to a 20 W robot, or a 60 W drone and beyond. Customer benefits Supports inductive and resonant charging methods Supports 15 W charging and existing standards, including fast charging of smartphones Power levels up to 60 W Full power 15 W without exotic thermal management Multiple industry standard and custom charging profiles using the same hardware architecture Achieves charging rates equivalent to wired charging Half- and full-bridge support Supports custom-charging profiles and industry standards on the same hardware Discrete IGBTs Single- and multi-coil transmitters WBG semiconductors Features and benefits Key features Applications 20-300 V MOSFETs XMCTM power conversion kits Foreign object detection (FOD) with improved accuracy quality-factor monitoring Variable and fixed frequency transmitter types Foreign object detection capability can be extended beyond existing standards to improve detection Buck and boost topologies Supports custom coils, and greater than three coils Integrated flash for parameter storage Voltage supply 1.8-5.5 V Power ICs Space saving VQFN-40 package XENSIVTM sensors Microcontrollers Gate driver ICs Intelligent switches and input ICs For a detailed overview of Infineon's wireless charging solutions, check pages 25-29. Packages www.infineon.com/wirelesscharging For more details on the product, click on the part number. 327 XMCTM starter kits XMCTM starter kits Kits and evaluation boards Xtreme2go Order number: KIT_XMC_2GO_XTR_ XMC1400 XMC1400 family kit with ADAFRUIT, MikroE and Shields2Go connectivity. Extension for IoT and other cloud applications. The XMC1400 series devices are optimized for motor control, power conversion and LED Lighting applications and Human-Machine Interface (HMI) Click on the following to find/purchase the kit: www.infineon.com/Xtreme2go Platform2go XMC4400 Order number: KIT_XMC_PLT_2GO_XMC4400 Equipped with an Arm(R) Cortex(R)-M4 based XMCTM microcontroller, the XMC4400 Platform2Go is designed to evaluate the capabilities of Infineon's XMC4400 microcontroller. It can be used with a wide range of development tools including Infineon's free of charge Eclipse based IDE DAVETM This kit has the XMC4400 device with debugger plus Ethernet, CAN, Arduino, MikroBUS and Shields2Go form factor. Click on the following to find/purchase the kit: www.infineon.com/XMC4400patform2go XMC1400 Arduino Order number: KIT_XMC1400_ARDUINO This kit utilizes Infineon's industry leading Arm(R) Cortex(R) M0 microcontroller in combination with Arduino form factor. It can be used with a wide range of development tools including Infineon's free of charge Eclipse based IDE, DAVETM and much more. Click on the following to find/purchase the kit: www.infineon.com/xmc1400_ARDUINO For more details on the product, click on the part number. 328 Applications 20-300 V MOSFETs XMCTM starter kits 500-950 V MOSFETs Platform2go XMC4200 Order number: KIT_XMC_PLT 2GO_XMC 4200 Equipped with an Arm(R) Cortex(R)-M4 based XMCTM microcontroller from Infineon WBG semiconductors Technologies AG, the XMC4200 Platform2Go is designed to evaluate the capabilities of Infineon's XMC4200 microcontroller. It can be used with a wide range of development tools including Infineon's free of charge Eclipse based IDE DAVETM This kit has the XMC4200 device with debugger plus CAN, Arduino, MikroBUS and Shields2Go form factor. Discrete IGBTs Click on the following to find/purchase the kit: www.infineon.com/XMC4200patform2go Power ICs RGB LED lighting shield Order number: KIT_XMC_LED_DALI_20_RGB One of the first intelligent evaluation boards compatible with Gate driver ICs Intelligent switches and input ICs Arduino as well as Infineon's XMC1100 BOOT KIT. Designed to be easily configurable and combinable for different LED light engines and lamps, for fast prototyping and in-expensive evaluation of LED lighting applications. The RGB LED lighting shield with XMC1302 uses a DC-DC buck topology. Packages XENSIVTM sensors Microcontrollers Click on the following to find/purchase the kit: www.infineon.com/cms/en/product/evaluation-boards/kit_xmc_led_dali_20_rgb/ For more details on the product, click on the part number. 329 XMCTM peripherals XMCTM peripherals IEC60730 class B library for XMCTM Supporting the XMC1xxx and XMC4xxx families In collaboration with the consultancy Hitex, Infineon developed the IEC60730 - class B software library for XMCTM industrial microcontrollers for household electrical appliances. This is a dedicated software library for XMCTM MCUs with routines for internal supervisory functions and for self-diagnostics. Extended documentation and pre-certified software libraries to XMCTM Cortex(R) Arm(R) based controllers are free of charge. For more information, please check: www.hitex.com/classb Documentation Consultancy Safety application note Failure mode report FMEDA tool Implementation support by Hitex by Infineon, revised in workshops by TUV Sud Embedded security for XMCTM MCUs Infineon and its partners provide solutions which support with data protection, allowing authentication and encryption and securing firmware file updates to prevent cloning and downtimes. Security solutions Software Hardware Secure bootloader by Infineon, XMC1000 CodeMeter Embedded by WIBU, XMC4000 exclusive OPTIGATM family by Infineon Hardware-based security solutions OPTIGATM Trust family OPTIGATM TPM family Turnkey and programmable security solutions Standardized certified turnkey solution KMS/CycurKEYS by ESCRYPT, XMC4000 emSecure by SEGGER www.infineon.com/xmc For more details on the product, click on the part number. 330 Applications Discrete IGBTs WBG semiconductors 500-950 V MOSFETs 20-300 V MOSFETs AURIXTM microcontroller AURIXTM-32-bit microcontrollers Power ICs 32-bit multicore TriCoreTM-safety joins performance Intelligent switches and input ICs AURIXTM is Infineon's family of microcontrollers serving the needs of industrial applications in terms of performance and safety. Its innovative multicore architecture, based on up to six independent 32-bit TriCoreTM CPUs at 300 MHz, has been designed to meet the highest safety standards while increasing the performance at the same time. Using the AURIXTM scalable platform, developers will be able to implement applications such as motor control and drives, PLC or any other automation application. Developments using AURIXTM require less effort to achieve the SIL/ IEC61508 standard based on its innovative safety concept and multiple HW safety features. Furthermore, AURIXTM has enhanced communication capabilities to support communication between CAN, LIN, FlexRay and Ethernet buses. Gate driver ICs Features and benefits Customer benefits TriCoreTM with DSP functionality High scalability gives the best cost-performance fit Best-in-class real-time performance: up to six TriCoreTM with up to 300 MHz per core High integration leads to significant cost savings Supporting floating point and fix point with all cores High integration leads to reduced complexity Up to 6.9 MB of internal RAM, up to 16 MB of flash Innovative supply concept leads to best-in-class power consumption Microcontrollers Key features Innovative single supply 5 V or 3.3 V IEC61508 conformance to support safety requirements up to SIL 3 Embedded EEPROM XENSIVTM sensors Advanced communication peripherals: CAN FD, LIN, SPI, FlexRay, Ethernet Packages www.infineon.com/aurix For more details on the product, click on the part number. 331 AURIXTM microcontroller AURIXTM TC2xx family system architecture Powerful 1st generation AURIXTM TC2xx system architecture FPU PMI PMU LMU DMI overlay TriCoreTM 1.6P Data flash BROM key flash RAM Progr. flash Progr. flash SRI cross bar Diverse lockstep core Diverse lockstep core FPU PMI DMI overlay TriCoreTM 1.6P PMI FPU TriCoreTM 1.6E Bridge DMI stand-by overlay SDMA OCDS System peripheral bus System peripheral bus PLL & PLL ERAY HSSL BCU SCU STM HSM DS-ADCx ADCx IOM FCE I2C PSI5 SENT EVR QSPIx GPT12x ASCLINx MultiCAN+ FlexRay Ethernet GTM MSCx CCU6x Ports 5 or 3.3 V single supply AURIXTM TC2xx family package scalability 9x series TC297 TC298 TC299 up to 8 MB 300 MHz 300 MHz 300 MHz BGA-416 LFBGA-516 7x series TC275 TC277 up to 4 MB 200 MHz 200 MHz 6x series TC264 TC265 TC267 up to 2.5 MB 200 MHz 200 MHz 200 MHz 3x series TC233 TC234 TC237 up to 2 MB 200 MHz 200 MHz 200 MHz 2x series TC222 TC223 TC224 up to 1 MB 133 MHz 133 MHz 133 MHz 1x series TC212 TC213 TC214 up to 512 KB 133 MHz 133 MHz 133 MHz TQFP-80 TQFP-100 LQFP-144 TQFP-144 Flash Package LQFP-176 LFBGA-292 Upgrade/downgrade with pin-compatible packages www.infineon.com/aurix For more details on the product, click on the part number. 332 300 8000 2728 FPU, FFT, CIF 3/1 169 60/10 DS no 6 4xASCLIN, 4xQSPI, 3xMSC, 2xI2C, 15xSENT, HSSL, 5xPSI5, 2xFlexRay, Ethernet, CAN FD K LFBGA-292 EVR, STBU, HSM TC297TX 300 8000 2728 FPU 3/1 263 60/10 DS no 6 4xASCLIN, 4xQSPI, 3xMSC, 2xI2C, 15xSENT, HSSL, 5xPSI5, 2xFlexRay, Ethernet, CAN FD K LFBGA-292 EVR, STBU, HSM TC297TP 300 8000 728 FPU 3/1 169 60/10 DS no 6 4xASCLIN, 4xQSPI, 3xMSC, 2xI2C, 15xSENT, HSSL, 5xPSI5, 2xFlexRay, Ethernet, CAN FD K LFBGA-292 EVR, STBU, HSM TC277TP 200 4000 472 FPU 3/2 169 60/6 DS 4 4xASCLIN, 4xQSPI, 2xMSC, HSSL, 2xI2C, 10xSENT, 3xPSI5, FlexRay, Ethernet, CAN FD LFBGA-292 EVR, WUT, HSM no K TC275TP 200 4000 472 FPU 3/2 112 60/6 DS no 4 4xASCLIN, 4xQSPI, 2xMSC, HSSL, 2xI2C, 10xSENT, 3xPSI5, FlexRay, Ethernet, CAN FD K LQFP-176 EVR, WUT, HSM TC267D 200 2500 240 FPU 2/1 169 50/3 DS no 5 4xASCLIN, 4xQSPI, 2xMSC, 2xI2C, 10xSENT, 3xPSI5, HSSL, FlexRay, Ethernet, CAN FD K LFBGA-292 EVR, STBU TC265D 200 2500 240 FPU 2/1 112 50/3 DS no 5 4xASCLIN, 4xQSPI, 2xMSC, 2xI2C, 10xSENT, HSSL, 3xPSI5, FlexRay, Ethernet, CAN FD K LQFP-176 EVR, STBU TC264DA 200 2500 752 FPU, FFT, CIF 2/1 88 40/3 DS no 5 4xASCLIN, 4xQSPI, 2xMSC, 2xI2C, 10xSENT, HSSL, 3xPSI5, FlexRay, Ethernet, CAN FD K LQFP-144 EVR, STBU TC264D 200 2500 240 FPU 2/1 88 40/3 DS no 5 4xASCLIN, 4xQSPI, 2xMSC, 2xI2C, 10xSENT, HSSL, 3xPSI5, FlexRay, Ethernet, CAN FD K LQFP-144 EVR, STBU TC237LP 200 2000 192 FPU 1/1 120 24 no 6 2xASCLIN, 4xQSPI, 4xSENT, FlexRay, CAN FD K LFBGA-292 EVR, WUT, HSM TC234LA 200 2000 704 FPU, FFT 1/1 120 24 no 6 2xASCLIN, 4xQSPI, 4xSENT, FlexRay, Ethernet K TQFP-144 EVR, WUT, HSM TC234LX 200 2000 704 FPU 1/1 120 24 no 6 2xASCLIN, 4xQSPI, 4xSENT, FlexRay, Ethernet K TQFP-144 EVR, WUT, HSM TC234LP 200 2000 192 FPU 1/1 120 24 no 6 2xASCLIN, 4xQSPI, 4xSENT, FlexRay, CAN FD K TQFP-144 EVR, WUT, HSM TC233LP 200 2000 192 FPU 1/1 78 24 no 6 2xASCLIN, 4xQSPI, 4xSENT, FlexRay, CAN FD K TQFP-100 EVR, WUT, HSM TC224L 133 1000 96 FPU 1/1 120 24 no 3 2xASCLIN, 4xQSPI, 4xSENT, CAN FD K TQFP-144 EVR, WUT TC223L 133 1000 96 FPU 1/1 78 24 no 3 2xASCLIN, 4xQSPI, 4xSENT, CAN FD K TQFP-100 EVR, WUT TC222L 133 1000 96 FPU 1/1 59 24 no 3 2xASCLIN, 4xQSPI, 4xSENT, CAN FD K TQFP-80 EVR, WUT TC214L 133 500 96 FPU 1/1 120 14 no 3 2xASCLIN, 4xQSPI, 4xSENT, CAN FD K TQFP-144 EVR, WUT TC213L 133 500 96 FPU 1/1 78 24 no 3 2xASCLIN, 4xQSPI, 4xSENT, CAN FD K TQFP-100 EVR, WUT TC212L 133 500 96 FPU 1/1 59 24 no 3 2xASCLIN, 4xQSPI, 4xSENT, CAN FD K TQFP-80 EVR, WUT 500-950 V MOSFETs EVR, STBU, HSM TC297TA WBG semiconductors LBGA-416 Discrete IGBTs 4xASCLIN, 6xQSPI, 3xMSC, 2xI2C, 15xSENT, HSSL, 5xPSI5, 2xFlexRay, Ethernet, CAN FD K Power ICs 3/1 232 60/10 DS yes 6 Intelligent switches and input ICs Additional features/remarks 4) FPU Temperature ranges 3) 8000 728 Communication interfaces 2) 300 CAN nodes EVR, STBU, HSM TC298TP External bus interface EVR, STBU, HSM LFBGA-516 Number of ADC channels LFBGA-516 4xASCLIN, 6xQSPI, 3xMSC, 2xI2C, 15xSENT, HSSL, 5xPSI5, 2xFlexRay, Ethernet, CAN FD K Timed I/O 4xASCLIN, 6xQSPI, 3xMSC, 2xI2C, 15xSENT, HSSL, 5xPSI5, 2xFlexRay, Ethernet, CAN FD K 3/1 263 84/10 DS yes 6 Cores/lockstep 3/1 263 84/10 DS yes 6 FPU Co-processor 1) 8000 2728 FPU 8000 728 SRAM (incl. cache) [kB] 300 300 Program memory [kB] TC299TX TC299TP Max. clock frequency [MHz] Packages AURIXTM TC2xx portfolio Product type Applications 20-300 V MOSFETs AURIXTM microcontroller IF = camera and external ADC Interface, FFT = fast fourier transform accelerator, FPU = floating point unit, PCP = peripheral control processor C ASC = asynchronous serial channel, ASCLIN = asyn/synchronous local interconnect network, HSSL= high-speed serial link, I2C = inter-integrated circuit, LIN = local interconnect network, MLI = micro link interface, MSC = micro second channel, PSI5 = peripheral sensor interface 5, QSPI = queued serial peripheral interface, SENT = single edge nibble transmission, SSC = synchronous serial channel, CAN FD ISO11898-1:2015 3) Ambient temperature range: A = -40C ... 140C, B = 0C ... 70C, F = -40C ... 85C, H = -40C ... 110C, K = -40C ... 125C, L = -40C ... 150C, X = -40C ... 105C 4) EVR = embedded voltage regulator, HSM = hardware security module, STBU = stand-by control unit, WUT = wake-up timer 1) Gate driver ICs 2) Evolution from TC2xx to TC3xx - Easy migration with focus on reuse Microcontrollers Fast conversion of existing AURIXTM TC2xx designs XENSIVTM sensors - Backwards compatibility - High AURIXTM TC3xx compatibility to pinout of existing QFP100/144/176 and BGA packages Flexibility - scalability within the AURIXTM TC3xx family - Up-/Downgrade paths for devices in identical packages - Compatible pin-out of QFP/BGA package options enabling combination designs Pin-to-pin compatibility between the devices of AURIXTM TC2xx/TC3xx and from generation to generation A high scalability with a very large portfolio for both AURIXTM TC2xx and TC3xx Packages www.infineon.com/aurix For more details on the product, click on the part number. 333 AURIXTM microcontroller AURIXTM TC3xx family system architecture AURIXTM TC3xx - scalable family - from low-cost to high-performance applications IO pads all 5 V/3.3 V FPU PSPR, PCACHE DSPR, DCACHE CPU5 CPU4 Safety LBIST MBIST upgrade SPU RIF CIF Pflash 0...5 Dflash CPU2 CPU1 TC 1.6P CPU0 CPU3 Checker core Checker core Checker core Checker core LMU Mini MCDS ETH MAC Delta-sigma Enhanced concept SFI bridge HSSL HSCT Larger SRAM SRAM/flash ratio increased Enhanced MPU A/B swap support SENT PSI5S PSI5 I2 C Stand-by control unit Low-power modes ASC LIN CAN FD ERAY STM GPT CCU6 GTM EDS ADC FCOMP DMA System peripheral bus EVADC Secondary ADC ADC Improvement of existing ADC Reduction of capacitive load Memories QSPI/I2S (emulation) eMMC/SDIO StdBy ctrl HSM FCE MSC HSDPM SCU IOM Port System resource interconnect Primary ADC HSM: Full EVITA compliance New accelerators ECC256/SHA256 Available on all devices ADAS LVDS IF Signal processing unit SPU RIF Large MEM DAM Performance New TriCoreTM 162 generation New instructions Up to 6 CPUs at 300 MHz New direct flash access path Ethernet 1 Gbit/s ETH QoS services Remote DMA eMMC/SDIO External NAND flash IF AURIXTM TC3xx provides an upgrade on key parameters with focus on SW & HW reuse Performance increase and reduction of power Increased from 3 to 6 cores Developed in 40 nm for power consumption reduction Scalable & backwards compatible to TC2xx Fully compatible devices with focus on HW & SW reuse Functional safety IEC61508 compliant enabling SiL-3 level Enhanced security Upgraded to Full EVITA support Improved networking Richer peripheral set SOTA Full support of SOTA A/B swap www.infineon.com/aurix For more details on the product, click on the part number. 334 Applications AURIXTM microcontroller TC397XA 16 MB 300 MHz 6x 300 MHz 9x series TC397x TC399x 16 MB 300 MHz 300 MHz 4x 300 MHz Ex series TC387Qx 12 MB 300 MHz 8x series TC387Q TC389Q 10 MB 300 MHz 300 MHz 3x 300 MHz 7x X series TC377TX 6 MB 300 MHz 3x 300 MHz 7x series TC375T TC377T 6 MB 300 MHz 300 MHz 2x 300 MHz 6x series TC364D TC366D TC365D TC367D 4 MB 300 MHz 300 MHz 300 MHz 300 MHz 4x 300 MHz Ax series TC3A8Q TC3A7Q 4 MB 300 MHz 300 MHz 3x 300 MHz 5x A series TC356TA TC357TA 4 MB 300 MHz 300 MHz 2x 300 MHz 3x A series TC336DA1) TC337DA1) 2 MB 200 MHz 200 MHz 1x 300 MHz 3x series TC332L1) TC333L1) TC334L1) TC336L1) TC337L1) 2 MB 200 MHz 200 MHz 200 MHz 200 MHz 200 MHz 1x 300 MHz 2x series TC322L TC323L TC324L TC327L 1 MB 160 MHz 160 MHz 160 MHz 160 MHz TQFP-80 TQFP-100 T/LQFP-144 Flash Package L - Single lockstep core D - Dual core T - Triple core Q - Quadruple core BGA-180 LQFP-176 BGA-233 X - Sextuple core LFBGA-292 Control and actuate Discrete IGBTs Power ICs LFBGA-516 Intelligent switches and input ICs 4x 300 MHz 500-950 V MOSFETs 9x A series WBG semiconductors 6x 300 MHz 20-300 V MOSFETs AURIXTM TC3xx package scalability Sense and compute 1) An option of 300 MHz is also available MCU scalability Safety/security concept Performance and flash Pin compatibility Binary-compatible cores ISO 26262 compliance IEC61508 compliant Gate driver ICs Advanced package technologies deliver the best price/performance ratio Customers can choose between different devices in the same pin-compatible package Microcontrollers AURIXTM TC3xx Connectivity Power consumption Ethernet: up to 2x1 GB CAN FD: up to 12 channels eMMC IF XENSIVTM sensors On-chip SC DC-DC high-efficiency power supply Integrated standby controller Packages www.infineon.com/aurix For more details on the product, click on the part number. 335 AURIXTM microcontroller Communication interfaces EBU, eMMC, 2x HSSL 6x SPI, 2x FlexRay, 12x LIN, 25x SENT, 4x PSI5, 2x I2C, 4x MSC EVITA full K, L LFBGA-516 5 V/3.3 V EVR, 8-bit SCR TC399XP 6/4 300 16000 2816 no 12 1 EBU, eMMC, 2x HSSL 6x SPI, 2x FlexRay, 12x LIN, 25x SENT, 4x PSI5, 2x I2C, 4x MSC EVITA full K, L LFBGA-516 5 V/3.3 V EVR, 8-bit SCR TC397XX 6/4 300 16000 6912 no 12 1 eMMC, 2x HSSL 6x SPI, 2x FlexRay, 12x LIN, 25x SENT, 4x PSI5, 2x I2C, 4x MSC EVITA full K, L LFBGA-292 5 V/3.3 V EVR, 8-bit SCR TC397XP 6/4 300 16000 2816 no 12 1 eMMC, 2x HSSL 6x SPI, 2x FlexRay, 12x LIN, 25x SENT, 4x PSI5, 2x I2C, 4x MSC EVITA full K, L LFBGA-292 5 V/3.3 V EVR, 8-bit SCR TC397XA 6/4 300 16000 6912 2x SPU/ 8x 400 Mbit/s LVDS 12 1 2x HSSL 6x SPI, 2x FlexRay, 12x LIN, 25x SENT, 4x PSI5, 2x I2C, 4x MSC EVITA full K, L LFBGA-292 5 V/3.3 V EVR, 8-bit SCR TC389QP 4/2 300 10000 1568 no 12 1 HSSL 5x SPI, 2x FlexRay, 24x LIN, 25x SENT, 4x PSI5, 2x I2C, 3x MSC EVITA full K, L LFBGA-516 5 V/3.3 V EVR, 8-bit SCR TC387QP 4/2 300 10000 1568 no 12 1 HSSL 5x SPI, 2x FlexRay, 24x LIN, 25x SENT, 4x PSI5, 2x I2C, 3x MSC EVITA full K, L LFBGA-292 5 V/3.3 V EVR, 8-bit SCR TC377TX 3/3 300 6000 4208 no 12 2 eMMC, HSSL 5x SPI, 1x FlexRay, 12x LIN, 15x SENT, 2x PSI5, 1x I2C, 2x MSC EVITA full K, L LFBGA-292 5 V/3.3 V EVR, 8-bit SCR TC377TP 3/2 300 6000 1136 no 8 1 HSSL 5x SPI, 1x FlexRay, 12x LIN, 15x SENT, 2x PSI5, 1x I2C, 2x MSC EVITA full K, L LFBGA-292 5 V/3.3 V EVR, 8-bit SCR TC375TP 3/2 300 6000 1136 no 8 1 HSSL 5x SPI, 1x FlexRay, 12x LIN, 15x SENT, 2x PSI5, 1x I2C, 2x MSC EVITA full K, L LQFP-176 5 V/3.3 V EVR, 8-bit SCR TC367DP 2/2 300 4000 672 no 8 1 HSSL 4x SPI, 1x FlexRay, 12x LIN, 10x SENT, 2x PSI5, 1x I2C, 1x MSC EVITA full K, L LFBGA-292 5 V/3.3 V EVR, 8-bit SCR TC366DP 2/2 300 4000 672 no 8 1 HSSL 4x SPI, 1x FlexRay, 12x LIN, 10x SENT, 2x PSI5, 1x I2C, 1x MSC EVITA full K, L LFBGA-196 5 V/3.3 V EVR, 8-bit SCR TC365DP 2/2 300 4000 672 no 8 1 HSSL 4x SPI, 1x FlexRay, 12x LIN, 10x SENT, 2x PSI5, 1x I2C, 1x MSC EVITA full K, L LQFP-176 5 V/3.3 V EVR, 8-bit SCR TC364DP 2/2 300 4000 672 no 8 1 HSSL 4x SPI, 1x FlexRay, 12x LIN, 10x SENT, 2x PSI5, 1x I2C, 1x MSC EVITA full K, L TQFP-144 5 V/3.3 V EVR, 8-bit SCR TC364DP 2/2 300 4000 672 no 8 1 HSSL 4x SPI, 1x FlexRay, 12x LIN, 10x SENT, 2x PSI5, 1x I2C, 1x MSC EVITA full K, L LQFP-144 5 V/3.3 V EVR, 8-bit SCR TC357TA 3/2 300 4000 3664 2x SPU/ 8x 400 Mbit/s LVDS 8 1 no 4x SPI, 1x FlexRay, 4x LIN EVITA full K, L LFBGA-292 5 V/3.3 V EVR, 8-bit SCR TC356TA 3/2 300 4000 3664 2x SPU/ 8x 400 Mbit/s LVDS 8 1 no 4x SPI, 1x FlexRay, 4x LIN EVITA full K, L LFBGA-196 5 V/3.3 V EVR, 8-bit SCR TC337DA 2/1 200 2000 1568 1x SPU/ 4x 400 Mbit/s LVDS 8 1 eMMC 4x SPI, 1x FlexRay, 12x LIN, 6x SENT EVITA full K, L LFBGA-292 5 V/3.3 V EVR, 8-bit SCR TC336DA 2/1 200 2000 1568 1x SPU/ 4x 400 Mbit/s LVDS 8 1 eMMC 4x SPI, 1x FlexRay, 12x LIN, 6x SENT EVITA full K, L LFBGA-196 5 V/3.3 V EVR, 8-bit SCR TC337LP 1/1 200 2000 248 no 8 no no 4x SPI, 1x FlexRay, 12x LIN, 6x SENT EVITA full K, L LFBGA-292 5 V/3.3 V EVR, 8-bit SCR TC336LP 1/1 200 2000 248 no 8 no no 4x SPI, 1x FlexRay, 12x LIN, 6x SENT EVITA full K, L LFBGA-196 5 V/3.3 V EVR, 8-bit SCR TC334LP 1/1 200 2000 248 no 8 no no 4x SPI, 1x FlexRay, 12x LIN, 6x SENT EVITA full K, L TQFP-144 5 V/3.3 V EVR, 8-bit SCR TC333LP 1/1 200 2000 248 no 8 no no 4x SPI, 1x FlexRay, 12x LIN, 6x SENT EVITA full K, L TQFP-100 5 V/3.3 V EVR, 8-bit SCR TC332LP 1/1 200 2000 248 no 8 no no 4x SPI, 1x FlexRay, 12x LIN, 6x SENT EVITA full K, L TQFP-80 5 V/3.3 V EVR, 8-bit SCR TC327LP 1/1 160 1000 96 no 8 no no 4x SPI, 6x SENT, 6x LIN EVITA full K, L LFBGA-292 5 V/3.3 V EVR, 8-bit SCR TC324LP 1/1 160 1000 96 no 8 no no 4x SPI, 6x SENT, 6x LIN EVITA full K, L TQFP-144 5 V/3.3 V EVR, 8-bit SCR TC323LP 1/1 160 1000 96 no 8 no no 4x SPI, 6x SENT, 6x LIN EVITA full K, L TQFP-100 5 V/3.3 V EVR, 8-bit SCR TC322LP 1/1 160 1000 96 no 8 no no 4x SPI, 6x SENT, 6x LIN EVITA full K, L TQFP-80 5 V/3.3 V EVR, 8-bit SCR Additional features/ remarks 3) 1 Packages 12 Temperature ranges no HSM 6912 External bus interface 2) Ethernet 100/1000Mbit 16000 SRAM (incl. cache) [kB] 300 Program memory [kB] 6/4 Max clock frequency [MHz] TC399XX Product type CAN/CAN FD nodes Radar accelerator/ radar interface 1) Cores/lockstep AURIXTM TC3xx portfolio AURIXTM TC3xx family 1) SPU - Signal processing unit 2) HSSL - High-speed serial link 3) 8-bit SCR - Standby controller for low power modes 4) EVR - Embedded voltage regulator www.infineon.com/aurix For more details on the product, click on the part number. 336 20-300 V MOSFETs AURIXTM starter and application kits Applications AURIXTM microcontroller 500-950 V MOSFETs Infineon starter kits - 32-bit microcontrollers AURIXTM Triboards Kits Full evaluation board for development to write Discrete IGBTs WBG semiconductors and debug your 1st programs Includes getting started advice, free TriCoreTM entry tool chain, technical documentation, compiler and debugger TriBoard available for all productive silicon AURIXTM TFT Kits Low cost board for early evaluation with limited Intelligent switches and input ICs Power ICs access to signals Additional touchscreen display for convenient handling TFT board available for every silicon Click on the following to find/purchase the kit: www.infineon.com/aurix-kits Arduino ShieldBuddy Kits Order number: KIT_AURIX_TC275_ARD_SB Gate driver ICs The Hitex TC275/TC375 ShieldBuddy follows the Arduino standard Compatible with 100's of Arduino application shields Evaluation licenses available Ideal for getting started on a high-end real time embedded industrial Microcontrollers or automotive application as well as students and hobbyists AURIXTM TC275 Lite kit XENSIVTM sensors AURIXTM TC275/TC375 device in LQFP-176 package FTDI based debugger with micro USB Use of Arduino Uno/compatible platform Coming soon Packages www.infineon.com/aurix-kits For more details on the product, click on the part number. 337 AURIXTM microcontroller Infineon application kits - 32-bit microcontrollers Motor control Order number: KIT_AURIX_TC234_MOTORCTR TC234 application kit with TFT display incl. safety supply TLF35584 Driving of a 3-phase PMSM/BLCD (12 V/max. 50 W) BLDC motor from Nanotec integrated Software available with flexible configuration 24 GHz radar Order number: KIT_ATV_24GHZ_RADAR Range-Doppler radar system with two Rx antennas and one Tx antenna based on AURIXTM TC264DA and BGT24ATR12 Allows implementation and testing of 24 GHz radar applications as Doppler movement detectors, FSK or FMCW range/position measurement Wireless charging Order number: KIT_AURIX_TC21_SC Supports all fast charge smartphones Unique power drive architecture minimizes EMI Improved accuracy Foreign Object Detection (FOD) New hybrid kit for inverter applications IFX system offering: such as power modules, gate drivers, current and position sensors to develop inverter systems Software to start development of inverter for 3-phase motors AURIXTM 2G hardware optimized logic board for testing different hybrid kits for inverter applications Motor control board TC3xx Based on TC397 Software FOC (Field Oriented Control) algorithm: encoder as position sensor (GPT12) 3-phase current sensing (EVADC), PWM generation (GTM), communication with drive board (QSPI) commands via TFT display (QSPI) www.infineon.com/aurix For more details on the product, click on the part number. 338 20-300 V MOSFETs Industrial robotics Application example Suggested products 500-950 V MOSFETs (EN ISO 10218 and ISO/TS15066) Integrated security with hardware security module Robust 3 V-, 5 V-, LVDS - PortPins Large portfolio with long-term availability TC38x TC39x XMC4xxx Discrete IGBTs TC23x TC33x TC36x TC37x System benefits High computing performance: up to 6x 300 MHz High flexibility thanks to tailored peripherals Integrated safety support WBG semiconductors Application features High computing performances High level of accuracy, integration and efficiency Safety management in line with current norms Various topologies for axes, joints and motors Security features that protect intellectual property from counterfeiting Applications AURIXTM microcontroller Power management LDO SMPS Power ICs DC-DC Authentication Gate driver 32-bit MCU AURIXTM Current sensing Wireless Hall latches USB Position sensing LEDs Output signal Communications Gyro Actuators Microcontrollers Human-device interface Radar sensor Sensor interface XMC4xxx Accelerometer Sensing Gate driver ICs Angle sensor EtherCAT Pushbutton M Pressure sensor Light/optical sensor XENSIVTM sensors CAN 3-phase inverter Intelligent switches and input ICs Security 3D image sensor Packages www.infineon.com/aurix For more details on the product, click on the part number. 339 AURIXTM microcontroller AURIXTM and XMCTM PDH partners Preferred Design Houses (PDH) and software resellers The preferred design house extends the support force by specifying and customizing the know-how. Furthermore, it brings an additional value for customer service. The preferred design house supports the set up for systems using AURIXTM and XMCTM , including software and other Infineon products. Our partners are trained to use AURIXTM and XMCTM. 1 level customer support covering Infineon products/solutions Technical interface and support to the customer st Classic (Free of charge) Project management and project-specific Premium (Consultancy mode) To be agreed between customers and PDH Basic application support Specification of general software architecture, defining required layers, control and data flow structure etc. Specification and implementation of custom device drivers Optimization of software components with regard to speed/code size * Essential principles and elementary know-how to support a customer; provision of basic training for design teams Advanced * High-level project-specific application support/consulting Driving design at customer Basic training for design teams at customer 24 h response time to the customer Software testing Support for project-specific functional safety engineering Project-specific support for security solution Safety support Security support Multicore support Expert * Extensive knowledge and ability to fully support development www.infineon.com/aurix For more details on the product, click on the part number. 340 20-300 V MOSFETs Embedded power ICs System-on-chip solution for motor control applications TLE9845 TLE9850/1 TLE985x TLE986x Arm(R) Cortex(R)-M0 Core frequency 25-40MHz Flash size Driver stage 48KB 48KB - 96KB Half-bridge Relay PN FET half-bridge * HV monitor inputs 4-5 5 Junction temperature levels 150C 150C Packages 24-40MHz 48/64KB Relay TLE987x Arm(R) Cortex(R)-M3 40 MHz 36KB - 64KB NN FET falf-Bridge 36KB - 128KB (Extension to 256KB in development) H-bridge B6-bridge N FET H-bridge N FET B6-bridge 4 0-1 150C and 175C 150C and 175C 150C and 175C VQFN-48-31 VQFN-48-29 VQFN-48-31 VQFN-48-29 VQFN-48-29 and VQFN-48-31 (TQFP-48 planned) VQFN-48-31 WBG semiconductors TLE984x Discrete IGBTs Criteria 500-950 V MOSFETs Infineon`s Embedded power ICs include a 32-bit Arm(R) Cortex(R)-M microcontroller, a voltage regulator, the communication interfaces, along with the driving stages for motor control applications. These system-on-chip solutions offer an unmatched level of integration of all functions required to sense, control and actuate a motor. They save space and energy, improve the overall system reliability through advanced diagnosis features and reduce the overall cost due to a minimum number of external components. They perfectly fit with a range of motor control applications where a small package form factor and a minimum number of external components are essential. Controller Key features Customer benefits Extensive diagnostics and protections embedded within the system-on-chip High levels of system reliability Minimum number of external components needed Reduced cost Platform based approach with compatible software between the product families Support multiple and flexible designs with minimal effort Data processing, actuation and sensing integrated into the product with 32-bit Arm(R) Cortex(R)-M Space saving Intelligent switches and input ICs Power ICs Features and benefits Leadless VQFN package with 7x7 mm footprint Energy saving Embedded power IC Embedded power ICs enable mechatronic motor Discrete control or Microcontroller PWM LIN Interface Uni-direction (DC brush motor) or Bridge driver or Relay driver MOSFET of Relay M 2-phase (DC brush motor) or Supporting Functionality Position measurement Switch panel inputs Output driver 3-phase M (Brushless DC motor) -BLDC- control solutions for either relay, half-bridge or fullbridge DC and BLDC motor applications They are supported by a complete development tool chain provided by Infineon and third party vendors. The tool chain includes compilers, debuggers, evaluation boards, LIN low level drivers and configuration tools as well as variety of example software code. Microcontrollers M XENSIVTM sensors Power supply Input signals Gate driver ICs Intelligent power saving modes including stop and sleep mode and energy management for external sensors (on demand) +12 V from battery Applications Embedded power ICs Packages www.infineon.com/embeddedpower For more details on the product, click on the part number. 341 Embedded power ICs BLDC Motor Control Shield for Arduino 3-phase motor control shield with TLE9879QXA40 The BLDC Shield for Arduino uses the TLE9879QXA40 chip, which is a part of the TLE987x family of the Infineon Embedded power IC portfolio. It enables the shield to drive 3-phase BLDC motors with a variety of different features. One Arduino base board can control up to four BLDC shields via SPI. The BLDC Shield firmware provides an autoaddressing functionality. Every shield in the stack can be controlled independently and run completely different motor control algorithms if desired. The shield implements three different advanced motor control algorithms: Sensorless field-oriented control (FOC), Block commutation with back EMF (BEMF) Hall based block commutation (HALL) The firmware can be changed using the SWD Interface Additional connectors for voltage supply, motor-phases and hall sensors speed up the evaluation. Features and benefits Key features Customer benefits Implemented motor control algorithms (FOC, BEMF, Hall) Easy to use API, allowing the user to quickly setup an application Controlled over Arduino via SPI Compatible with the Arduino Uno or the Infineon XMCTM baseboard Up to four Shields can be used simultaneously High performance BLDC motor control in form of the TLE987x chip Each Shield can be controlled independently Motor parameters can be set for each Shield individually Our BLDC Shield for Arduino comes with a library which includes a collection of code that makes it easy for you to run your project. The Arduino library offers an intuitive API to quickly setup and configure an application. www.infineon.com/bldcmotorshield www.infineon.com/shields-for-arduino For more details on the product, click on the part number. 342 Applications Power ICs Discrete IGBTs WBG semiconductors 500-950 V MOSFETs 20-300 V MOSFETs Microcontroller support Intelligent switches and input ICs Infineon support for industrial microcontrollers Further information, datasheets and documents www.infineon.com/xmc www.infineon.com/xmc1000 www.infineon.com/xmc4000 www.infineon.com/aurix www.infineon.com/makers XMCTM MCUs ecosystem and enablement- kits, board, tools and software XMC SC Wireless power controller: www.infineon.com/xmcscwirelesspowercontrollers Ecosystem and tools: www.infineon.com/xmc-ecosystem Gate driver ICs One platform, countless solutions XENSIVTM sensors Microcontrollers Boards and kits: www.infineon.com/xmc-dev www.infineon.com/connectivitykit www.infineon.com/ethercat Packages DAVETM IDE: www.infineon.com/dave For more details on the product, click on the part number. 343 XENSIVTM sensors Sensors XENSIVTM pressure sensors XENSIVTM current sensors XENSIVTM magnetic position sensors Intuitive sensing XENSIVTM MEMS microphone XENSIVTM pressure sensor XENSIVTM 24 GHz radar sensor ICs XENSIVTM 60 GHz radar sensor IC Shield2Go Sensor 2GO kits For more details on the product, click on the part number. 344 Packages For more details on the product, click on the part number. 345 XENSIVTM sensors Microcontrollers Gate driver ICs Intelligent switches and input ICs Power ICs Discrete IGBTs WBG semiconductors 500-950 V MOSFETs 20-300 V MOSFETs Applications XENSIVTM For more details on the product, click on the part number. 346 Applications 20-300 V MOSFETs XENSIVTM 500-950 V MOSFETs Infineon XENSIVTM - sensing the world WBG semiconductors Infineon XENSIVTM sensors are exceptionally precise thanks to industry-leading technologies. They are the perfect fit for various customer applications in automotive, industrial and consumer markets. Power ICs Discrete IGBTs From the world leader in sensing technology, XENSIVTM sensors simplify lives by enabling "things" to "see", "hear", "feel" and intuitively "understand" their environment. As a result of proven quality and outstanding reliability, customers can rely on XENSIVTM for system stability, durability and integrity. Providing high accuracy and best-in-class measurement performance, XENSIVTM sensors add great value to customer applications. More than 40 years of experience in sensing solutions and a deep-rooted system understanding result in the broadest portfolio of ready-to-use sensor solutions on the market. Ecosystem partners and our customers partner with us for leading technologies, perfect-fit solutions and continuous innovation. XENSIVTM sensors Microcontrollers Gate driver ICs Intelligent switches and input ICs With a proven track record in IoT innovation, we continue to seamlessly and securely connect people and machines. Many IoT trends, such as smart devices and wearables, electromobility and connected cars, smart factories and homes, and energy intelligence are being driven by technologies that develop with XENSIVTM sensors families as one of their key elements. Today, we are already inspiring the next generation of smart environments, capable of understanding and responding to human communication. Infineon's semiconductors are at the very heart of machine-to-machine (M2M), human-machine interface (HMI), mobile and wireless infrastructure technologies. As the technological boundary between humans and machines gradually disappears, these devices need even more advanced intelligence, enriched with voice assistance capabilities and the latest sensor fusion innovations, not to mention robust security technologies to protect personal data. Infineon's sensors and microphones are already delivering this intelligent functionality and inspiring the next step in mobile connectivity. Packages www.infineon.com/xensiv For more details on the product, click on the part number. 347 XENSIVTM pressure sensors Absolute pressure sensors (MAP and BAP) Infineon's pressure sensors are ideal for a wide range of applications in automotive and industrial sectors. Typical applications in automotive include side airbag, engine control and seat comfort with high quality, highly accurate products adhering to ISO26262 standard. Infineon offers the ideal portfolio for these systems. The analog and digital interfaces of Infineon's pressure sensors provide customers with a high degree of design flexibility and enable manufacturers to meet evolving market demands. KP21x/KP22x - Analog manifold air pressure sensor IC family (MAP + turbo MAP) Features Manifold air pressure measurement - MAP and turbo MAP Excellent accuracy of up to 1.0 kPa over a large temperature range Ratiometric analog voltage output proportional to the applied pressure Output signal fully compensated over pressure and temperature Pressure range from 10 to 400 kPa Temperature range from -40 to +140C Output clamping (optional) Complete product family available with multiple transfer function Reverse polarity protection Green SMD package KP23x - Analog barometric air pressure (BAP) sensor IC family Features Absolute air pressure measurement Excellent accuracy of 1.0 kPa over a large temperature range Ratiometric analog voltage output proportional to the applied pressure Output signal fully compensated across pressure and temperature range Pressure range from 40 to 165 kPa Temperature range from -40 to +125C Serial service interface Open bond detection (OBD) for supply and GND Inverse polarity protection Green SMD package KP25x/KP264 - Digital barometric air pressure (BAP) sensor IC family Features Absolute air pressure measurement Excellent accuracy of 1.0 kPa over a large temperature range Real 10-bit pressure resolution Integrated temperature sensor Real 10-bit temperature resolution Power-down mode for reduced power consumption Self diagnosis features Output signal fully compensated across pressure and temperature range Pressure range from 40 to 165 kPa Temperature range from -40 to +125C Green SMD package www.infineon.com/pressure For more details on the product, click on the part number. 348 20-300 V MOSFETs KP276 Media robust MAP sensor with digital interface WBG semiconductors 500-950 V MOSFETs Features Media robustness for current automotive requirements Digital single edge nibble transmission (SENT) interface (282 clock ticks) Excellent accuracy of 0.77 percent FSS Green SMD package Temperature range -40 to +170C Integrated NTC temperature sensor functionality with fast start up time (typ. 10ms) Block diagram NCS MUX NTCIN NTC conditioning Temperature compensation VDD Voltage regulator Analog ADC Digital signal processing CLK Digital core (iSM) SPI interface SDI Discrete IGBTs Normal mode/ diagnosis mode SDO VDDA E2PROM interface VDDD SENTOUT Buffer amplifier (interface driver) ROM Power ICs Pressure cells Applications XENSIVTM pressure sensors E2PROM Digital Reset Intelligent switches and input ICs GND Integrated pressure sensor ICs for manifold and barometric air pressure Pressure range [kPa] Max. accuracy [kPa] KP21x * 10 ... 150 1.0 Max. operating temperature [C] 140 Automotive Industrial KP22x * 10 ... 400 2.5 140 KP23x * 15 ... 115 1.0 125 KP236N6165 60 ... 165 1.0 125 KP253 60 ... 165 1.0 125 KP254 40 ... 115 1.5 125 KP255 * 10 ... 125 1.4 140 KP256 60 ... 165 1.0 125 40...115 1.5 125 10 ... 400 3.0 170 XENSIVTM sensors Microcontrollers KP264 KP276 * Gate driver ICs Product *For more information on the product, contact our product support Packages www.infineon.com/pressure For more details on the product, click on the part number. 349 XENSIVTM current sensors High-precision coreless current sensors for industrial applications Infineon's current sensors provide accurate and stable current measurement up to 120 A. The products are intended for use in high-voltage industrial applications such as electric drives, photovoltaic inverters, power supplies or battery management systems. The coreless open-loop sensors are based on Infineon's precise and stable Hall technology. Thus, the output signal is highly linear over temperature and lifetime. Due to a lack of an iron core, the sensor signal doesn't show hysteresis and it doesn't suffer from saturation. Thanks to the integrated current rail there is no need for external calibration. The differential measurement with two Hall cells ensures high accuracy even in a noisy environment with cross-talk from adjacent current lines or magnetic stray fields. Highlights of the XENSIVTM TLI4971 include best-in-class thermal performance for high currents as a result of its innovative TISON-8 package as well as isolation against high voltages. The two output pins for fast overcurrent signals can be used for pre-warning and system shut-down. Designers can program the threshold levels of the overcurrent signals and thus adapt them to individual requirements without any external components. The sensor also provides a signal in case of an over or undervoltage condition for the supply voltage. The well-established Infineon's TLI4970 combines superior accuracy with one output pin for overcurrent detection signal. The measurement signal is provided through a 3-pin serial peripheral interface (SPI) using a standard unidirectional 16-bit SPI protocol is used. Several sensors can be connected to a parallel SPI bus. Features Integrated current rail with typical 225 insertion resistance enables ultralow power loss Smallest form factor, 8x8 mm SMD, for easy integration and board area saving Single supply voltage, 3.1 to 3.5 V Highly accurate, scalable, DC and AC current sensing Bandwidth greater than 120 kHz enables wide range of applications Very low sensitivity error over temperature (max. 2.5%) Excellent stability of offset over temperature and lifetime High robustness to voltage slew rates up to 10 V/ns Galvanic functional isolation up to 1150 V peak VIORM; partial discharge capability of at least 1200 V; 4 mm clearance and creepage Differential sensor principle ensures superior magnetic stray field suppression Two independent fast over-current detection (OCD) pins with configurable thresholds enable protection mechanisms for power circuitry (typical < 1.5 s) Precalibrated sensor Applications Electrical drives (up to 690 V) Photovoltaic inverter General purpose inverters Overload and overcurrent detection Current monitoring Chargers Power supplies Product Accuracy 1) Current range [A] Bandwidth [kHz] Sensitivity [mV/A] TLI4971-A120T5-U-E0001 3.45% 120.0 120 kHz min. 10 Certification UL Industrial Package PG-TISON-8 TLI4971-A120T5-E0001 3.45% 120.0 120 kHz min. 10 - PG-TISON-8 www.infineon.com/current-sensor 1) Total error over lifetime and temperature 350 For more details on the product, click on the part number. 20-300 V MOSFETs Hall switches The energy-saving option with excellent accuracy and robustness 500-950 V MOSFETs TLE/TLI/TLV4961/64/6: Energy-efficient Hall switch family for up to 32 V WBG semiconductors The TLE/TLI/TLV496x-xM/L family of Hall switches saves energy and enables designers to create precise, compact systems. With an operational current consumption of just 1.6 mA, TLE/TLI/TLV496x-xM/L products can cut energy consumption up to 50 percent compared with similar competitor products. Thanks to its small magnetic hysteresis, the family paves the way for precise switching points in systems. The integrated temperature profile compensates magnetic drifts and enables stable performance over temperature and lifetime. TLE/TLI/TLV496x-xM products come in the small SOT23 package. The sensors also feature an integrated functionality test for better system control. Release point BRP Hysteresis BHY 2.0 5.0 7.5 18.0 28.0 12.5 7.5 1.0 15.0 10.0 10.0 3.5 18.0 28.0 2.0 7.5 -2.0 -5.0 -7.5 12.5 22.5 9.5 5.0 -1.0 -15.0 -10.0 8.5 2.5 12.5 22.5 -2.0 -7.0 4.0 10.0 15.0 5.5 5.5 3.0 2.5 2.0 30.0 20.0 1.5 1.0 5.5 5.5 4.0 15.0 Automotive - - - - Industrial - - - Consumer Power ICs Package SOT23/SSO-3-2 SOT23 SOT23/SSO-3-2 SOT23 SOT23 SOT23 SOT23 SOT23/SSO-3-2 SOT23 SOT23 SOT23 SOT23 SOT23 SOT23 SOT23/SSO-3-2 SOT23 Intelligent switches and input ICs Operating point BOP Latch Latch Latch Switch Switch Switch Switch Bipolar Latch Latch Switch Switch Switch Switch Latch Latch Gate driver ICs Type TLE4961-1M/L TLE4961-2M TLE4961-3M/L TLE4964-1M TLE4964-2M TLE4964-3M TLE4964-5M TLE4968-1M/L TLE4961-5M TLE4961-4M TLE4964-4M TLE4964-6M TLV4964-1M TLV4964-2M TLI4961-1M/L TLV4961-3M XENSIVTM sensors Product Discrete IGBTs Applications Window lifter (index counting) Power closing (index counting) Gear stick (position detection) Seat belt (position detection) BLDC commutation (e.g. wiper seat belt pretentioner, pump, seating) Service robots Power tools White goods Microcontrollers Features Current consumption of just 1.6 mA 3 to 32 V supply voltage range (over voltage up to 42 V) 7 kV ESD protection (HBM) Overtemperature and overcurrent protection Temperature compensation Smallest SOT23 package Dedicated products for industrial applications (TLI496x) AEC-Q100 qualified Electrical drives Applications XENSIVTM magnetic position sensors Packages www.infineon.com/Hall-switches www.infineon.com/magnetic-sensors For more details on the product, click on the part number. 351 XENSIVTM magnetic position sensors TLE/TLI4963/65-xM 5 V high-precision automotive/industrial Hall-effect sensors By offering an excellent magnetic behavior Infineon's switches are ideally suited for: Index counting application with a pole wheel Rotor position detection (BLDC motors) Open/close detection Features 3.0 to 5.5 V operating supply voltage Low current consumption 1.4 mA ESD protection 4 kV HBM Active error compensation (chopped) High stability of magnetic thresholds Low jitter (typ. 0.35 s) Operating temperature range: - from -40 to +170C (TLE496x-xM) - from -40 to +125C (TLI496x-xM) Small SMD package SOT23 TLE: AEC-Q100 qualified TLI: JESD47 qualified Product Type Operating point BOP Release point BRP Hysteresis BHY TLE4963-1M Latch 2.0 -2.0 4.0 Automotive Industrial - Package SOT23 TLE4963-2M Latch 5.0 -5.0 10.0 - SOT23 TLE4965-5M Unipolar switch 7.5 5.0 2.5 - SOT23 TLI4963-1M Latch 2.0 -2.0 4.0 - SOT23 TLI4963-2M Latch 5.0 -5.0 10.0 - SOT23 TLI4965-5M Unipolar switch 7.5 5.0 2.5 - SOT23 TLV496x-xTA/B Precision Hall-effect sensor for consumer applications in leaded package Features 3.0 to 26 V operating supply voltage Low current consumption 1.6 mA ESD protection 4 kV HBM Operating temperature range from -40 to +125 C Leaded package TO92S Applications BLDC motor commutation for consumer devices (e.g. e-bikes, fans, aircons) Position detection e.g. flaps and control buttons Product Type Operating point BOP Release point BRP Hysteresis BHY Consumer Industrial Package TLV4961-1TA Latch 2.0 -2.0 TLV4961-1TB Latch 2.0 -2.0 4.0 TO92S-3-1 TO92S-3-1 4.0 TO92S-3-2 TLV4961-3TA Latch 7.5 TO92S-3-2 -7.5 15.0 TO92S-3-1 TLV4961-3TB Latch TO92S-3-1 7.5 -7.5 15.0 TO92S-3-2 TLV4964-4TA TO92S-3-2 Unipolar switch 10.0 8.5 1.5 TO92S-3-1 TO92S-3-1 TLV4964-4TB Unipolar switch 10.0 8.5 1.5 TO92S-3-2 TO92S-3-2 TLV4964-5TA Unipolar switch 7.5 5.0 2.5 TO92S-3-1 TO92S-3-1 TLV4964-5TB Unipolar switch 7.5 5.0 2.5 TO92S-3-2 TO92S-3-2 TLV4968-1TA Latch 1.0 -1.0 2.0 TO92S-3-1 TO92S-3-1 TLV4968-1TB Latch 1.0 -1.0 2.0 TO92S-3-2 TO92S-3-2 www.infineon.com/Hall-switches www.infineon.com/magnetic-sensors For more details on the product, click on the part number. 352 Operating voltage [V] TLI4966G Available -40 to +125 TLE4966G Available TLE4966-2G 500-950 V MOSFETs Magnetic thresholds Output Comment Package 2.7-24 Bop: +7.5 mT Brp; -7.5 mT Speed and direction Horizontal Hall plates For industrial application SMD package TSOP6-6 -40 to +150 2.7-24 Bop: +7.5 mT Brp; -7.5 mT Speed and direction Horizontal Hall plates SMD package TSOP6-6 Available -40 to +150 2.7-24 Bop: +7.5 mT Brp; -7.5 mT Speed and speed Horizontal Hall plates SMD package TSOP6-6 TLE4966-3G Available -40 to +150 2.7-24 Bop: +2.5 mT Brp; -2.5 mT Speed and direction Horizontal Hall plates SMD package TSOP6-6 TLE4966V-1G Available -40 to +150 3.5-32 Bop: +2.5 mT Brp; -2.5 mT Speed and direction Horizontal Hall plates SMD package TSOP6-6 TLE4966L Available -40 to +150 2.7-24 Bop: +7.5 mT Brp; -7.5 mT Speed and direction Horizontal Hall plates Leaded package SSO-4 WBG semiconductors Temperature range [C] Discrete IGBTs Production samples XENSIVTM sensors Microcontrollers Gate driver ICs Intelligent switches and input ICs Product Applications Window lifter Sunroof Automatic tailgate Automated doors Sun blinds Garage doors Power ICs Features Two Hall probes for information on speed and direction Excellent matching between the two Hall probes Hall plate distance of 1.45 mm Outstanding quality TSOP6 package TLE: AEC-Q100 qualified TLI: JESD47 qualified 20-300 V MOSFETs TLx4966 Two-in-one double Hall sensor Applications XENSIVTM magnetic position sensors Packages www.infineon.com/Hall-switches www.infineon.com/magnetic-sensors For more details on the product, click on the part number. 353 XENSIVTM magnetic position sensors Linear Halls TLE499x family: programmable analog/digital linear Hall sensor family Infineon's family of TLE499x linear Hall ICs is tailored to the needs of highly accurate angular and linear position detection and current measurement applications. Each product measures the vertical component of a magnetic field and outputs a signal that is directly proportional to the magnetic field. These programmable linear Hall sensors come with different interface options: TLE4997 features ratiometric analog output, while TLE4998P comes with pulse width modulation (PWM), TLE4998S with single edge nibble transmission (SENT) and TLE4998C with short PWM codes (SPC). These high-precision 12-bit resolution linear Hall sensors feature EEPROM memory for flexible programming across a wide range of parameters. Thanks to digital signal processing based on a 20-bit DSP architecture plus digital temperature compensation, these sensors deliver outstanding temperature stability compared with similar compensation methods. TLE4998 also includes stress compensation to withstand stress effects from the package, such as moisture, thus ensuring best-in-class accuracy over the device's lifetime. Features Best-in-class accuracy with low drift of output signal temperature range lifetime (including stress compensation in TLE4998) Programmable transfer function (gain, offset), clamping, bandwidth and temperature characteristics AEC-Q100 qualified Available in various packages including SSO-3-9 with two integrated capacitors to improve ESD and ESC behavior Dual-die SMD package TLE4997, TLE4998 ISO26262 ready TLE4999I3 fully ISO26262 compliant Product Programmable TLE4997 Applications Detecting linear and angular position Detecting pedal and throttle position Steering torque measurement Headlight leveling High-current sensing Seat position and occupant detection Suspension control Detecting gear stick/lever positions Detecting liquid levels in fuel tanks Current sensing e.g. for battery management Number of pins Sensitivity Magnetic (programmable range) offset Supply voltage (extended range) EEPROM 3/Single die SMD 8 12.5 to 300 mV/mT 5 V 10% (7 V) EEPROM 3/4/Single die SMD 8 0.2 to 6%/mT EEPROM 3/4/Single die SMD 8 TLE4998C EEPROM 3/4/Single die SMD 8 8.2 to 245 LSB12/mT < 400 T 5 V 10% (16 V) l TLE4999I3 EEPROM 3 73.72 to 147.44 * LSB13/mT < 300 T 5.5-7 V 10% (16 V) l TLE4998P TLE4998S 8.2 to 245 LSB12/mT < 400 T < 400 T < 400 T 5 V 10% (16 V) 5 V 10% (16 V) Automotive ISO26262 l l l Interface Package Analog SSO-3-10 TDSO-8 PWM SSO-3-10 SSO-4-1 SSO-3-9 (2 capacitors) TDSO- 8 SENT SSO-3-10 SSO-4-1 SSO-3-9 (2 capacitors) TDSO-8 Ready SPC SSO-3-10 SSO-4-1 SSO-3-9 (2 capacitors) TDSO-8 Compliant PSI5 SSO-3-12 -- Ready Ready www.infineon.com/linear-hall www.infineon.com/magnetic-sensors For more details on the product, click on the part number. 354 20-300 V MOSFETs Dual linear Halls Two sensors in one SMD package WBG semiconductors 500-950 V MOSFETs The SMD package (TDSO) includes two independent sensors with separate power supply and separate signal outputs. Due to special mounting technology, Infineon is able to keep dual-sensor package size very small to enable compact PCB layouts and small magnet sizes. Infineon offers a wide range of Hall sensors in the TDSO package. The combination of two sensors in one package offers sensors redundancy, a feature which is especially interesting for new generation EPS steering systems with increased ISO26262 requirements and other safety critical applications. All sensors are automotive qualified. Discrete IGBTs Most products are also available as single-sensor solution with only one sensor. The newest member of the TLE499x family, the TLE4999I3, is a fully ISO26262 compliant linear Hall sensor that includes 2 sensor channels on one chip. The SSO-3 package allows PCB-less application flexibility and the PSI5 interface enables low EMI at high speed communication with minimum wiring. Features Automotive applications Steering torque systems Pedal position Any other safety critical application Interface Dual-/ single-sensor available ISO26262 Package TLE4997A8D Analog yes/yes Ready TDSO-8 TLE4998P8D PWM yes/yes Ready TDSO-8 TLE4998S8D SENT yes/yes Ready TDSO-8 TLE4998C8D SPC yes/yes Ready TDSO-8 TLE4999I3 PSI5 monolithic * Compliant SSO-3 Microcontrollers Product Gate driver ICs Intelligent switches and input ICs Power ICs Two sensors in one package Separate power supply and signal output AEC-Q100 qualified Temperature range from -40 to +125C Outstanding quality Single-sensor versions available 16-pin and 8-pin versions available ISO26262 ready TLE4999I3 ISO26262 compliant Applications XENSIVTM magnetic position sensors XENSIVTM sensors * 2 sensor channels on one chip Packages www.infineon.com/linear-hall www.infineon.com/magnetic-sensors For more details on the product, click on the part number. 355 XENSIVTM magnetic position sensors Angle sensors Compact designs in small outline packages Highest variety - low end to high end, standardized and specialized in all four magnetic technologies: Hall, GMR, AMR and TMR Infineon's magnetic sensor products TLE5501, are fast analogue TMR-based angle sensors dedicated to automotive applications. Their fields of use range from steering angle applications, with the highest functional safety requirements, to motors for wipers, pumps and actuators and electric motors in general. They are also ready to be used in industrial and consumer applications like robotics or gimbal. Angle sensors detect the orientation of an applied magnetic field by measuring sine and cosine angle components with monolithically integrated magneto resistive elements. Infineon's iGMR sensors are ideal for applications with a wide angle range, such as BLDC motors or steering sensors. They are pre-calibrated and ready to use. Different levels of signal processing integration enable designers to optimize system partitioning. The XENSIVTM iAMR sensors also perfectly fit applications with the highest accuracy requirements, as they offer best performance over temperature, lifetime and magnetic field range. iGMR, iAMR and iTMR based angle sensors Diverse redundant sensor with analog and digital interface Product Technology Die configuration ISO26262 Sin/cos output Angle output Second interface Accuracy Package TLE5009 GMR Single die Ready Analog sin/cos - - 0.9 DSO-8 TLE5009A16(D) * GMR Dual die Ready Analog sin/cos - - 1.0 TDSO-16 TLE5011 GMR Single die Ready SSC (SPI) - - 1.6 DSO-8 TLI5012B GMR Single die Ready SSC (SPI) SSC (SPI) PWM/IIF/SPC/HSM 1.9 DSO-8 TLE5012B(D) GMR Single and dual die Ready SSC (SPI) SSC (SPI) PWM/IIF/SPC/HSM 1.0 DSO-8/ TDSO-16 TLE5014C16(D) GMR Single and dual die Compliant - SPC - 1.0 TDSO-16 TLE5014P16(D) GMR Single and dual die Compliant - PWM - 1.0 TDSO-16 TLE5014S16(D) GMR Single and dual die Compliant - SENT - 1.0 TDSO-16 TLE5014SP16(D) * GMR Single and dual die Compliant - SPI - 1.0 TDSO-16 TLE5109A16(D) * AMR Single and dual die Ready Analog sin/cos - - 0.5 TDSO-16 TLE5309D AMR + GMR Dual die Ready Analog sin/cos SSC (SPI) - AMR 0.5, GMR 1.0 TDSO-16 TLE5501 TMR Single die Compliant Analog sin/cos - - 1.0 DSO-8 www.infineon.com/angle-sensors www.infineon.com/magnetic-sensors 356 SPI = Serial peripheral interface IIF = Incremental interface PWM = Pulse width modulation *For more information on the product, contact our product support For more details on the product, click on the part number. Applications 20-300 V MOSFETs XENSIVTM magnetic position sensors iTMR based angle sensors 500-950 V MOSFETs Tunneling Magneto Resisitive (iTMR) technology is offering high sensing sensitivity with a high output voltage, reducing the need for an internal amplifier. Thus, the sensor can be connected directly to the microcontroller without any further amplification. In addition, iTMR technology shows a very low temperature drift, reducing external calibration and compensation efforts. The iTMR technology is also well known for its low current consumption. WBG semiconductors TLE5501 With the TLE5501 products, Infineon is currently launching the first angle sensor products based on iTMR technology. TLE5501 is available in two versions. Discrete IGBTs TLE5501 - product versions with different pin out: TLE5501 E0001: pin-compatible to TLE5009 automotive qualified acc. AEC-Q100 TLE5001 E0002: decoupled bridges for redundant external angle calculation and highest diagnostic coverage, realizing ISO26262-compliant development ASIL D Gate driver ICs Intelligent switches and input ICs Power ICs Features Large output signals of up to 0.37 V/V for direct microcontroller connection Discrete bridge with differential sine and cosine output Very low supply current: ~2 mA Magnetic field range (20-100 mT) Typ. angle error ~ 1.0 (overtemperature and lifetime) DSO-8 package AEC-Q100, grade 0: TA = -40C to 150C (ambient temperature) For TLE5501 E0002: - Reaching ASIL D with just one single sensor chip - ISO26262-compliant development ASIL D Applications XENSIVTM sensors Microcontrollers Steering angle sensor BLDC motor commutation (e.g. wipers, pumps and actuators) Angular position sensing for e.g. robotics or gimbal Electric motors Industrial automation Safety applications Packages www.infineon.com/angle-sensors www.infineon.com/magnetic-sensors For more details on the product, click on the part number. 357 XENSIVTM magnetic position sensors TLE5014(D) Digital iGMR sensor with an easy-to-use plug-and-play concept for highest functional safety applications All XENSIVTM TLE5014 angle sensors are available as single and dual die products. The products come pre-configured and pre-calibrated as plug-and-play sensors and are easy to use. Customers can choose between the interfaces SENT, PWM, SPC an SPI. On top of those protocol options, the sensors can be adapted to any kind of application setup via their programmable EPROM interfaces. TLE5014 magnetic angle sensors meet ISO26262 ASIL C for the single die and ISO26262 ASIL D for the dual die versions. All products are ready for applications with the highest functional safety requirements. The sensors show an extremely small angle error of less than 1 across the entire temperature profile and lifetime. This is particularly helpful in applications with the need for very accurate position sensing such as steering angle sensing or motor commutation. Further application areas range from rotor position measurement, electric power steering (EPS), pedal position to any other kind of position measurement. Features Easy-to-use, plug-and-play sensors, pre-configured and pre-calibrated Offering high flexibility: High angle accuracy: max. 1.0 over temperature and lifetime High voltage capability up to 26 V Development fully compliant with ISO26262 - Developed acc. ASIL D level - Dual die sensors reaching ASIL D, single die sensors ASIL C metrics Safety manual and safety analysis summary report available on request X A/D Y A/D SPI CORDIC - Available as single and dual die products - 12bit digital interface with protocol options PWM, SENT, SPC and SPI - E2 PROM and look-up table for customer configuration and calibration N S Applications Steering angle sensing (SAS) Motor commutation Rotor position measurement Pedal position Safety applications Any other kind of high-accuracy position measurement TLE5109A16(D) Analog iAMR sensor with temperature compensation Features Features a differential or single-ended analog interface for sine and cosine values Internal temperature drift compensation for gain and offset N Also available as a dual-sensor package S ISO26262 ready Typical 0.1" angle error over lifetime and temperature range after compensation (max 0.5") Available as single and dual die product X cos Y sin www.infineon.com/angle-sensors www.infineon.com/magnetic-sensors *Giant Magneto resistance 358 For more details on the product, click on the part number. 20-300 V MOSFETs 3D magnetic sensors Applications XENSIVTM magnetic position sensors TLV493D-A1B6/TLI493D-A2B6 for consumer and industrial market Rotation movement 3D movement Features 3D magnetic sensing Integrated temperature sensing Low current consumption - 7 nA in power-down mode - 10 A in ultralow power mode 2.8 to 3.5 V operating supply voltage Temperature range Qualification Linear movement Linear magnetic Resolution range IDD Update rate Package Ordering code TLV493D-A1B6 -40 ... 125C JESD47 130 mT (typ) 98 T/LSB 7 nA - 3.7 mA 10 Hz - 3.3 kHz TSOP6 SP001286056 TLI493D-A2B6 -40 ... 105C JESD47 160 mT (min) 100 mT (min) 130 T/LSB (65 T/LSB) 1) 7 nA - 3.3 mA 10 Hz - 8.4 kHz TSOP6 SP001689844 Power ICs Digital output via a 2-wire standard I2C interface Bx, By and Bz linear field measurement up to 160 mT JESD47 qualified 12-bit data resolution for each measurement direction Various resolution options from 65 T/LSB to 130 T Operating temperature range from -40 to +125C Intelligent switches and input ICs Product Discrete IGBTs WBG semiconductors 500-950 V MOSFETs The TLV493D-A1B6 sensor realizes an accurate three-dimensional sensing with extremely low power consumption in a small 6-pin package. Capable of detecting the magnetic field in the x, y, and z-direction, the sensor is ideally suited for the measurement of linear, rotation or 3 dimensional movements. Thanks to its small package and low power consumption, the TLx493D-AxB6 can be used in new applications, replacing potentiometer and optical solutions. Featuring contactless position sensing and high temperature stability of the magnetic threshold, the sensor allows systems getting smaller, more accurate and more robust. Gate driver ICs 1) Half range mode While the TLV493D-A1B6 just supports a typical value for the linear magnetic range of 130 mT, the TLI493D-A2B6 specification includes also a minimum value of 160 mT. Applications Anti tempering protection in smart meters Joysticks e.g. for medical equipment, cranes, CCTV-control, game consoles Control elements e.g. white goods multifunction knobs XENSIVTM sensors New features Sensor address read back Short mode range setting, focusing on the half of the magnetic range, ensuring higher accuracy Higher update frequency allows for an application field that requires faster update speed Angular mode (for x and y read-out only) Microcontrollers With the TLI493D-A2B6, a broader microcontroller compatibility as well an enhanced feature set is included. Packages www.infineon.com/3dmagnetic www.infineon.com/magnetic-sensors For more details on the product, click on the part number. 359 XENSIVTM magnetic position sensors 3D magnetic sensors 3D magnetic sensors TLE493D-A2B6/W2B6 TLE493D-A2B6/W2B6 for automotive low power applications 3D magnetic sensors for automotive low-power applications Infineon's TLE493D-x2B6 enables for all kind of automotive control The TLE493D-x2B6 enables forthe all kind of automotive control element applications within passenger compartment element applications within the passenger compartment or under the hood with a temperature range of -40 to +125C, or under themagnetic hood withrange a temperature rangeup of -40 to +125C with linear requirements to 160 mT. with linear magnetic range requirements up to 160 mT. Features Features 3D magnetic sensing 3D magnetic sensing Integrated temperature sensing temperature sensing Integrated 2.8 2.8 to 3.5 V operating supply voltage to 3.5 V operating supply voltage Low Lowcurrent currentconsumption consumption 0.007 power-down mode --0.007 AA inin power-down mode 10AA ultralowpower power mode --10 inin ultra-low mode - Up to 10 power modes - Up to 10 power modes Digital output via a 2-wire standard I2C interface Digital output via a 2-wire standard I C interface Bx, By and Bz linear field measurement 160 mT By and Bz linear field measurement 160 mT Bx, AEC-Q100 AEC-Q100 qualified qualified 12-bit 12-bitdata dataresolution resolution for each measurement direction for each measurement direction Variousresolution resolution options from T/LSB to 134 options from 6767 T/LSB to 134 T T Various Operatingtemperature temperature range +125C range upfrom to -40-40 to to +125C Operating 2 Product Temperature range Qualification Linear magnetic range Resolution IDD Update rate Wakeup Package Ordering code TLE493D-A2B6 -40 ... 125C AEC-Q100 160 mT (min) 130 T/LSB (65T/LSB)1) 7 nA - 3.3 mA 10 Hz - 8.4 kHz No TSOP6 SP001689848 AEC-Q100 160 mT (min) 100 mT (min) 130 T/LSB (65T/LSB)1) TSOP6 SP001655334 SP001655340 SP001655344 SP001655348 TLE493D-W2B6 A0 TLE493D-W2B6 A1 TLE493D-W2B6 A2 TLE493D-W2B6 A3 -40 ... 125C 7 nA - 3.3 mA 0.05 Hz - 8.4 kHz Yes 1) Half range mode The TLE493D-A2B6 features include a sensor address read back feature for additional communication verification, a half The XENSIVTM sensor TLE493D-A2B6 features include a sensor address read-back feature for additional communication range mode focusing to half of the magnetic range ensuring higher accuracy and an angular mode (for x and y read out only). verification, a half range mode focusing to half of the magnetic range, ensuring higher accuracy and an angular mode (for x and y readout only). With the TLE493D-W2B6 A0-A3, a 3D sensor has been developed, which includes an enhanced dynamic wake up feature. Four pre-programmed address options (A0-A3) will be available, enabling for a fast start up initialization, when used in I2C With the TLE493D-W2B6 A0-A3, a 3D sensor has been developed, which includes an enhanced dynamic wake up feature. bus configurations. It also includes enhanced test options and a safety documentation is available to enable the usage of Four pre-programmed address options (A0-A3) will be available, enabling for a fast start-up initialization, when used in I2C this sensor in the context of ASIL B systems. bus configurations. It also includes enhanced test options, and a safety documentation is available to enable the usage of this sensor in the context of ASIL B systems. Applications Control elements for infotainment/navigation systems, air Applications conditions, multifunctional steering wheels, seat controls Control elements for infotainment/navigation Top column modules e.g. direction indicator, systems, air conditions, multifunctional steering wheels, seat controls Top column modules e.g. direction indicator, wiper control wiper control Gearstick stickposition positionsensing sensing Gear www.infineon.com/3dmagnetic www.infineon.com/magnetic-sensors www.infineon.com/3Dmagnetic For more details on the product, click on the part number. 25 360 Sensor_Solutions_BR-2018.indb 25 23.07.2018 15:55:49 20-300 V MOSFETs Magnetic speed sensors Applications XENSIVTM magnetic speed sensors Easy to use, robust and cost-effective sensors for speed measurement WBG semiconductors 500-950 V MOSFETs Infineon's Hall- and GMR-based magnetic speed sensors are designed to measure speed in safety and powertrain applications such as speedometers, ABS, camshafts/crankshafts and automatic transmissions. They are also used in similar applications in the industrial sector. The sensors use a ferromagnetic gear tooth or encoder structure to measure linear or rotational speed and position. Hall sensor measuring rotational speed with a gear tooth and a magnetic encoder wheel. The majority of sensors also feature additional benefits such as integrated capacitors (C- types) for high EMC robustness and the highest levels of ESD protection. Modern powertrain systems rely on magnetic speed sensors, along with automotive pressure sensors, to achieve the required CO2 targets and smart powertrain solutions. Infineon offers a broad variety of magnetic speed sensors for camshaft, crankshaft and transmission applications. Discrete IGBTs TLE4922 Highly robust, easy-to-use mono-Hall speed sensor with twist-independent mounting Power ICs This sensor is specially designed to provide an easy-to-use, robust and cost-effective solution for vehicle or industrial speed sensing applications. The TLE4922 can, therefore, be back-biased using a simple, low-cost bulk magnet, while providing a good air gap performance and switching accuracy. Its hidden adaptive hysteresis and calibration algorithm enable good accuracy over air gap jumps and immunity to vibration and run-out events. Microcontrollers Gate driver ICs Intelligent switches and input ICs Features Large operating air gap capability Twist-independent mounting Hidden adaptive hysteresis Low current consumption Reverse magnetic polarity capability Advanced protection technology - Reverse voltage protection at VS-pin - Short-circuit protection - Overtemperature protection Wide operating temperature ranges of -40C Tj 150C High ESD robustness up to 4 kV HBM 3-wire PWM voltage interface XENSIVTM sensors Applications Two-wheeler Automotive vehicle speed Packages www.infineon.com/speed-sensors www.infineon.com/magnetic-sensors For more details on the product, click on the part number. 361 XENSIVTM magnetic speed sensors TLE4929 Fully programmable crankshaft sensor The TLE4929 is an active Hall sensor ideally suited for crankshaft applications and similar industrial applications, such as speedometer or any speed sensor with high accuracy and low jitter capabilities. Features Differential Hall speed sensor to measure speed and position of tooth/pole wheels Switching point in the middle of the tooth enables backward compatibility Robustness over magnetic stray-field due to differential sensing principle Digital output signal with programmable output-protocol including diagnosis interface Direction detection and stop-start-algorithm High accuracy and low jitter High sensitivity enable large air gap End-of-line programmable to adapt engine parameters Can be used as a differential camshaft sensor Automotive operating temperature range Product Automotive Industrial Sensor technology AEC-Q100 qualified RoHS HAL free Product status TLE4922 Mono-Hall In production TLE4929 Differential Hall In production www.infineon.com/speed-sensors www.infineon.com/magnetic-sensors For more details on the product, click on the part number. 362 Packages For more details on the product, click on the part number. 363 XENSIVTM sensors Microcontrollers Gate driver ICs Intelligent switches and input ICs Power ICs Discrete IGBTs WBG semiconductors 500-950 V MOSFETs 20-300 V MOSFETs Applications For more details on the product, click on the part number. 364 Intuitive sensing 500-950 V MOSFETs Giving things human-like senses for a better contextual awareness WBG semiconductors life easier, safer, greener and more efficient. Our intuitive sensing solutions are at the very core of this mission. Reflecting our belief that the essential value of sensor technology lies in making our lives more convenient through seamless, natural interactions between people and sensing devices, our aim is to leave you free to focus on what really matters in life. Discrete IGBTs Choose your type of sense Radar sensors MEMS microphones PAS CO2 sensor Our digital barometric pressure sensors give designers the best choice when it comes small form factors, highest precision and accuracy over a wide temperature range, fast read-out speeds and low power consumption. Radar supports existing applications while providing features that enable completely new use cases. It measures velocity, range and angle, both horizontal and vertical, for precise position mapping and 3D tracking. Digital MEMS microphones overcome existing audio chain limitations and are designed for applications where low self-noise (high SNR), wide dynamic range, low distortions and a high acoustic overload point are required. Leveraging photoacoustic spectroscopy (PAS), Infineon has developed an exceptionally small CO sensor that overcomes existing size, cost and performance challenges. Gate driver ICs Pressure sensors Power ICs Thanks to industry-leading technologies Infineon XENSIVTM sensors are exceptionally precise. They are the perfect fit for various customer applications in automotive, industrial and consumer markets. Intelligent switches and input ICs Imagine a world where technology is unobtrusive and seamlessly integrated into our lives. Where intentional/ deliberate communication between people and devices is no longer necessary. In this world, there is no need to push buttons or issue commands in order to activate devices, because technology is capable of interpreting implicit intentions and context. This enhances the user experience and makes it more natural - it almost seems like the devices around us intuitively understand what we want them to do. At Infineon, this future is already becoming reality. We develop sensor solutions that enable simple and effortless user interactions with all kinds of smart devices. Bridging the gap between the real and digital worlds, our technology is developed to make Applications 20-300 V MOSFETs Intuitive sensing XENSIVTM sensors Reflecting a holistic approach, we combine different sensors with state-of-the-art software to create a comprehensive picture of the world around us. By fusing several smart sensors into one coherent intelligent system, our intuitive sensing solutions simplify complex technical processes and enable people to effortlessly interact with devices. These smart devices intuitively sense the world around them, determining what is expected and needed from them. Packages This interaction often depends on the interpretation and merging of information from different sources. Machines cannot yet read our minds and do not always have the information necessary to correctly evaluate a given situation. So, we sometimes have to explicitly tell devices what we want them to do. This can be inconvenient and time-consuming. Inspired by human nature, Infineon intuitive sensing solutions are designed to take the complexity out of our interaction with devices. Microcontrollers Today, sensors already enable interactions between people and devices For more details on the product, click on the part number. 365 XENSIVTM MEMS microphone XENSIVTM MEMS microphone Time to debottleneck your audio chain The popularity of voice user interfaces and the usage of audio recording to share information and experiences are increasing dramatically. However, the performance of microphones often limits the potential of today's cutting-edge devices. Not anymore! Infineon's XENSIVTM MEMS microphones introduce a new performance class for digital MEMS microphones that overcome existing audio chain limitations. IM69D130 is designed for applications where low self-noise (high SNR), wide dynamic range, low distortions and a high acoustic overload point are required. Don't miss a single thing! With XENSIVTM MEMS microphones, you can create a new user experience benchmark in audio recording. Talk to tomorrow and be heard! With XENSIVTM MEMS microphones, you can define the benchmark in speech recognition for a new user experience. Hear nothing but your favorite beats! With XENSIVTM MEMS microphones, you can create headsets offering users a benchmark noise cancellation experience. Features 69 dB(A) signal-to-noise ratio (SNR) Below 1 percent distortions at 128 dBSPL (130 dBSPL AOP) Digital (PDM) interface with 6 s group delay at 1 kHz Tight sensitivity (-36 1 dB) and phase ( 2 deg) tolerances 28 Hz low frequency roll-off 4.0 x 3.0 x 1.2 mm package Benefits High fidelity and far field audio recording Matched, noise and distortion free audio signals for advanced audio processing Ultralow group delay for latency-critical applications No analog components required Typical applications High quality audio capturing: e.g. cameras, camcorders, conference systems Voice user interface: e.g. smart speaker, home automation and IoT devices Active noise cancellation: headphones and earphones Audio pattern detection: predictive maintenance, security or safety applications www.infineon.com/microphones For more details on the product, click on the part number. 366 500-950 V MOSFETs 20-300 V MOSFETs Infineon's dual backplate MEMS technology is based on a miniaturized symmetrical microphone design, similar as utilized in studio condenser microphones, and results in high linearity of the output signal within a dynamic range of 105 dB. The microphone noise floor is at 25 dB[A] (69 dB[A] SNR) and distortion does not exceed 1 percent even at sound pressure levels of 128 dB SPL (AOP 130 dB SPL). The flat frequency response (28 Hz low-frequency roll-off) and tight manufacturing tolerance result in close phase matching of the microphones, which is important for multi-microphone (array) applications. Ultralow distorsion (<1% THD) Maximum noise rejection WBG semiconductors IM69D130: 128dBSPL IM69D120: 118dBSPL AIN(+) Ultra precise corner frequency 28 Hz AIN(-) Class leading dynamic range IM69D130: 105dB IM69D120: 95dB Discrete IGBTs Phase matched microphones +/- 2deg @1kHz Applications XENSIVTM MEMS microphone Product portfolio OPN Package Current consumption Sensitivity Signal to noise Supply voltage IM69D130 IM69D130V01XTSA1 LLGA-5-1 980 A -36 dBFS 69 dB 1.62-3.6 V IM69D120 IM69D120V01XTSA1 LLGA-5-1 980 A -26 dBFS 69 dB 1.62-3.6 V Power ICs Product Audio Digital voice assistance and robots Smart home appliances + Highest beam-forming precision + Best speech recognition + Extended voice pickup distance + Best audio quality Conference Security Headsets Industry 4.0 + Ultraclear voice pickup + Sensitive to softest audio signals + Best noise attenuation + Smallest pattern deviation detection Intelligent switches and input ICs TV, laptop and set top box XENSIVTM sensors Microcontrollers Gate driver ICs Devices with voice user interface Packages www.infineon.com/microphones For more details on the product, click on the part number. 367 XENSIVTM pressure sensors XENSIVTM digital barometric pressure sensor For mobile and wearable devices Infineon's digital barometric pressure sensor family is the best choice for mobile and wearable devices due to its small form factor, high precision and low power consumption. Pressure sensing is based on capacitive technology which guarantees ultrahigh precision (2/5 cm) and relative accuracy (0.6 hPa) over a wide temperature range. The sensor's internal signal processor converts the output from the pressure and temperature sensor elements to 24-bit results. Each pressure sensor has been calibrated individually and contains calibration coefficients. The coefficients are used in the application to convert the measurement results to true pressure and temperature values. All sensors have a FIFO that can store the latest 32 measurements. Since the host processor can remain in a sleep mode for a longer period between readouts, a FIFO can reduce the system power consumption. Sensor measurements and calibration coefficients are available via the serial I2C/SPI interface. DPS310 Barometric pressure sensor with very low power consumption, recommended for applications where power consumption is critical and the highest precision in pressure metering is required. DPS422 Monolithic chip solution that has an ultrasmall critical area and a very thin package (0.73 mm typ.). Beneath high precision pressure metering, DPS422 offers also highly accurate absolute temperature sensing (0.4C), which is required in applications like weather stations, thermostats, etc. It can be used in applications such as weather stations/smart thermostats and offers additional features by pressure sensing (e.g. intruder detection, weather forecast). DPS368 DPS368 offers the best-in-class resolution (2 cm), a very fast read-out speed and a low current consumption. The sensor can be used in harsh environment, as it is robust against water (IPx8 - 50 m under water for 1 hour), dust and humidity. The small package size saves up to 80 percent of the space and makes the DPS368 ideal for mobile applications and wearable devices. Typical applications Drones: altitude detection and height stability Health and fitness: accurate elevation gain and step counting (e.g. for smart watches) Outdoor navigation: GPS start-up time/accuracy improvement; dead reckoning (e.g. in tunnels) Indoor navigation: floor detection e.g. in shopping malls and parking garages Smart home: micro weather forecasting; room temperature control; intruder detection Air flow control: Smart filter replacement alarm (e.g. in home appliances); predictive maintenance Health care: fall detection; respiratory devices; smart inhalers Key product features Package size Operating pressure range Operating temperature range Pressure level precision Relative accuracy Absolute accuracy Temperature accuracy Pressure temperature sensitivity Measurement time Average current consumption @ 1 Hz sampling rate Supply voltage Operating modes Interface DPS310 DPS422 DPS368 LGA 8-pin: 2.0 x 2.5 x 1.0 mm LGA 8-pin: 2.0 x 2.5 x 0.73 mm LGA 8-pin: 2.0 x 2.5 x 1.1 mm 300 ... 1200 hPa -40 ... 85C 0.005 hPa (or 0.05 m) 0.002 hPa (or 0.02 m) 0.06 hPa (or 0.5 m) 1 hPa (or 8 m) 0.5C < 0.4C 0.5C 0.5 Pa/K 3.6 ms (low precision); 27.6 ms (standard mode) 1.7 A pressure measurement, 1.5 A temp. 1.7 A pressure measurement, 2.0 A temp. 1.7 A pressure measurement, 1.5 A temp. measurement, standby 0.5 A measurement, standby < 1 A measurement, standby 0.5 A VDDIO: 1.2 - 3.6 V; VDD: 1.7 - 3.6 V Command (manual), background (automatic), standby I2C and SPI, both with optional interrupt www.infineon.com/pressuresensor For more details on the product, click on the part number. 368 Functional block diagram Digital core Calibration coefficients Capacitive pressure sensor Digital interface I2C/SPI 500-950 V MOSFETs Digital signal processing ADC MUX VDDIO Memory interface Voltage regulators FIFO WBG semiconductors Temperature sensor Applications 20-300 V MOSFETs XENSIVTM pressure sensors VDD Discrete IGBTs Application circuit example (in I2C configuration) Processor SDA VDDIO R 2 I C serial interface VDDIO SCK INT SDI VDDIO GND SCK Interrupt (optional) N.C. 1.2 ... 3.6 V C Pressure sensor SDO GND CSB VDD Power ICs R 1.7 ... 3.6 V 8 1 GND GND 7 2 VDDIO 6 3 SDI SDO 5 4 SCK CSB Vent hole Function Ground 2 CSB Chip select 3 SDI Serial data in/out 4 SCK Serial clock 5 SDO Serial data out 6 VDDIO Digital interface supply 7 GND Ground 8 VDD Analog supply DPS368 package drawing DPS422 package drawing XENSIVTM sensors DPS310 package drawing Name GND Gate driver ICs VDD Pin 1 Microcontrollers Pin configuration (top view) Intelligent switches and input ICs C Packages www.infineon.com/pressuresensor For more details on the product, click on the part number. 369 24 GHz radar sensor ICs XENSIVTM 24 GHz radar sensor ICs Infineon offers a wide portfolio of mmWave radar sensors to address different customer requirements. The BGT24M/L family is the largest and highest integrated 24 GHz radar transceiver family currently on the market, saving ~30 percent board space compared to discrete lineups. Infineon provides a total of five 24 GHz industrial radar chips, providing a range of different transmitter and receiver channel configurations, supporting different application requirements. Applications Building and smart home (IoT) Indoor/outdoor lighting Security UAV/multicopters Robotics Smart street lighting Key benefits Direction, proximity and speed detection Hidden mounting capability Maintains operation through harsh weather conditions Motion tracking Sensitive enough to capture breathing and heartbeat Target positioning Adaptable to different application requirements In addition to the BGT24M/L family of MMIC chips, Infineon provides a continuously expanding range of evaluation and demonstration boards to support the testing and development of radar in multiple applications. All boards are provided with base level software to support the ease of use and faster time-to-market integration. Utilizing our strong network of partners, the radar portfolio is extended to include a range of easy-to-integrate modules. Each of them contains Infineon's 24 GHz MMIC. Collision avoidance People tracking and occupancy detection in IoT/smart home Indoor and outdoor lighting systems Gesture control on TV Intrusion detection proximity sensor to activate appliances BSD (blind spot detection) in the car Streetlighting Air flight control Collision avoidance in multicopters and robotics Intruder alarm/presence detection in surveillance www.infineon.com/24GHz For more details on the product, click on the part number. 370 20-300 V MOSFETs Infineon BGT24M/L family of MMIC chips Infineon MMIC Benefits BGT24MTR11 1Tx + 1Rx BGT24MR2 2Rx BGT24MTR12 1Tx + 2Rx BGT24LTR11 1Tx + 1Rx BGT24LTR22 2Tx + 2Rx The BGT24LTR22N16 key features 24 GHz transceiver MMIC Fully integrated low phase noise VCO Integrated analog base band stage with programmable gain and filter settings Bi-directional pin for synchronization Built in temperature compensation circuit for VCO stabilization, no PLL needed Low power consumption Fully ESD protected device Single ended RF and IF terminals Single supply voltage 1.5 V WBG semiconductors Features Measures not just motion, but also speed, direction, and distance Small form factor Resistance to moisture, dirt and temperature Increased area coverage Discrete design Energy savings Privacy protection Adaptable to different application requirements Highly integrated chips eliminating costly external components SPI Power Det. Sensor ADC Power ICs Configuration Intelligent switches and input ICs Product mm mm BG/PTAT HPF LPF PS Trafo HPF LPF HPF LPF PS Trafo HPF LPF DAC PPF Trafo Gate driver ICs 5.5 2.4 moving objects up to 30 m Wide range speed detection up to 100 km/h Lower BOM costs Discrete IGBTs 2.4 4.5 mm Long range distance detection of Sync 1 Sync 1 Power splitter PPF Trafo Power Det. Microcontrollers motion, speed, direction movement and distance measurements 5 MMIC chips available Highly integrated mm 24 GHz ISM band operation for 500-950 V MOSFETs Infineon's range of 24 GHz industrial radar chips provides five configurations of transmit and receiver channels, ensuring that there is a chip to support your specific application. From basic applications such as motion detection in security systems, which only requires one transmit and one receive channel, to more complex applications like 3D positioning, which requires two or more receive channels, our range of radar chips supports all of your requirements. Features Applications 24 GHz radar sensor ICs DAC Trafo f-Div XENSIVTM sensors /tbd Packages www.infineon.com/24GHz For more details on the product, click on the part number. 371 24 GHz radar sensor 24 GHz evaluation and demonstration boards Infineon's range of 24 GHz evaluation and demo boards continues to expand to support the needs of our customers and the increasing number of innovative ways radar is being incorporated into new applications. Features Infineon development kit Three system boards available All include 24 GHz radar and XMCTM Benefits Capability to detect motion, speed microcontroller Kit contains user manual, GUI, MATLAB compiler and Gerber files Software available via Infineon Toolbox and direction of movement (approaching or retreating) distance and angle of arrival based on hardware Fast prototyping with available software Demokit with SW, reference design Sense2GOL Pulse (BGT24LTR11 + XMC4700) Distance2Go (BGT24MTR11 + XMC4200) Position2Go (BGT24MTR12 + XMC4700) Capability to detect motion, speed and direction of Capability to detect distance of multiple targets Capability to detect motion, speed and direction of Capability to detect and track position of multiple movement (approaching or retreating) Detection range of 18 m for human target at a power consumption < 5 mW High sensitivity of detection in comparison to PIR Arduino compatible microcontroller board (Arduino standard connectors) Modulation parameters can be changed to suit the application requirements Multiple current sensors for current consumption monitoring and optimization Integrated multiple element patch antennas movement (approaching or retreating) Operates in harsh environments and detects through non-metallic materials BGT24MTR11 - 24 GHz highly integrated RF MMIC XMC4200 Arm(R) Cortex(R)-M4 -32-bit industrial microcontroller Debug over Cortex 10 pin debug connector Integrated multiple element patch antennas targets Capability to detect distance of multiple targets Capability to detect motion, speed and direction of movement (approaching or retreating) Operates in harsh environments and detects through non-metallic materials BGT24MTR12 - 24 GHz highly integrated RF MMIC XMC4700 Arm(R) Cortex(R)-M4 -32-bit industrial microcontroller Debug over Cortex 10 pin debug connector Integrated multiple element patch antennas Main applications Main applications Drone: soft landing/obstacle avoidance Smart toilets Tank level sensing Intelligent switches Main applications Drone/robots: obstacle avoidance Security People tracking (IoT, smart home) Vital sensing Board dimensions Board dimensions Board 36 mm x 45 mm Board dimensions Board 50 mm x 45 mm Kit contents Kit contents User's manual Demonstration board Corner reflector SW GUI to operate kit FMCW FW and SW 1) Doppler FW and SW 1) Schematic and bill-of-materials of module Kit contents User's manual Demonstration board Corner reflector SW GUI to operate kit FMCW FW and SW Doppler FW and SW Schematic and bill-of-materials of module Security Indoor and outdoor lighting Smart home Automatic door opener Intelligent switches Speed measurement Board 55 mm x 85 mm Shield: 55 mm x 66 mm RF radar shield: SHIELD_BGT24LTR11 Programmed controller board: RADAR BB XMC4700 Micro USB cable Corner reflector SW GUI to operate kit Doppler FW and SW Schematic and bill-of-materials of module 1) Learn radar with Infineon on www.infineon.com/MakeRadar For the first time we bring radar to makers and developers. Here you can test, develop, and learn radar and its applications. At www.infineon.com/makeradar, you will see how simple it has become to work with ultrasmall radar sensors. The board and data will flow to your browser for testing, and this is not all, if you want to take the next step just take the available Arduino code examples and start your own project. www.infineon.com/24GHz 1) Usage of the FMCW and/or Doppler FW and SW requires agreeing to Infineon's user's agreement and licensing terms. 372 For more details on the product, click on the part number. 20-300 V MOSFETs 24 GHz modules Partnering with the leading radar solution providers enables Infineon to connect our customers looking for turnkey solutions and design support for a complete range of applications. Partner modules using Infineon chips 500-950 V MOSFETs Complete module, including Benefits Ease of design Turnkey solution, no need for radar MMIC, antenna options, MCU signal processing options, and SW options (Doppler, FSK and FMCW versions available) test and certification WBG semiconductors Features Applications 24 GHz radar sensor Module (RF module; RF module + MCU including SW) Discrete IGBTs By integrating Infineon's 24GHz MMIC chip into the partners easy-to-use and simple-to-integrate modules the complexity and time to market for a range of applications such as home automation, multicopter, robotics and street lighting, are reduced. Power ICs Lighting Security Intelligent switches and input ICs Touch free switches Gate driver ICs Door automation New application or simple PIR replacement? Radar has it covered. Microcontrollers Radar, used in motion detection applications, increases accuracy when compared to passive infrared (PIR) technology, allowing a more precise measurement of object detection, and providing new capabilities such as the detection of speed and the direction of moving objects. Radar is also superior to camera-based systems by allowing detection of the objects while keeping identities anonymous. XENSIVTM sensors Visit the link below to view our network of partners who provide modules and design support for all 24GHz industrial applications: www.infineon.com/24GHzpartners Packages www.infineon.com/24GHz For more details on the product, click on the part number. 373 60 GHz radar sensor XENSIVTM 60 GHz radar sensor IC Infineon's innovative XENSIVTM 60 GHz radar chip enables things to see and revolutionizes the human-machine interface. BGT60LTR11AIP * for consumer and IoT applications With their small form factor and low power consumption, Infineon's highly integrated radar sensor solutions bring innovative, intuitive sensing capabilities to many applications. Radar has been demonstrated to be a powerful sensor for short-range localization in surveillance, lighting and smart home appliances. And also for vital sign tracking in consumer electronics, healthcare, driver assistance and industrial applications. The BGT60LTR11AIP * is the smallest motion sensor in the market, featuring integrated antennas and integrated detectors. The device supports multiple operating modes including fully autonomous motion sensing that does not require any SW or HW design in effort. Block diagram Pulse gen. Clock gen. SPI BIST ADC Trafo S&H PS PPF MPA TX_DRV LPF Trafo LNA Power Del. S&H LPF PLL Target direct VTUNE FSM/ Controller Ext. Quarz f-Div Target direct Features and benefits Key features Key benefits 1 Transmit, 1 Receive Macro motions without microcontroller Integrated detectors No antenna design necessary Small footprint: 6,7mm x 3,3mm Can also measure micromotion, speed and distance when using a microcontroller Radiated power = 8 dBm Supports Doppler and FMCW modes of operation Antenna in package Low cost and high integration Product portfolio Product Package BGT60LTR11AIP * UF2BGA-42-1 *available Q3/2020 Automatic opening system www.infineon.com/60GHz For more details on the product, click on the part number. 374 Shield2Go Security WBG semiconductors OPTIGATM Trust E Security Shield2Go Product name: S2GO_Security_OPTIGA_E SP: SP001820138 Discrete IGBTs OPTIGATM Trust X Security Shield2Go Product name: S2GO SECURITY OPTIGA X SP: SP002349576 Sensors Power ICs IM69D130 Microphone Shield2Go Product name: S2GO MEMSMIC IM69D SP:SP002851544 Intelligent switches and input ICs S2GO Pressure Sensor DPS310 Product name: S2GO_PRESSURE_DPS310 SP: SP001777630 Microcontrollers Gate driver ICs S2GO Pressure Sensor DPS368 Product name: S2GO PRESSURE DPS368 Featured product: XENSIVTM pressure sensor DPS368 OPN:S2GOPRESSUREDPS368TOBO1 XENSIVTM sensors S2GO Pressure Sensor DPS422 Product name: S2GO PRESSURE DPS422 Featured product: XENSIVTM pressure sensor DPS422 OPN: S2GOPRESSUREDPS422TOBO1 TLI4970 Current Sense Shield2Go Product name: S2GO_CUR-SENSE_TLI4970 SP: SP001823682 www.infineon.com/s2go-myiot Packages www.infineon.com/sensors2go Applications 500-950 V MOSFETs Infineon's Shield2Go boards offer a unique customer and evaluation experience - the boards are equipped with one Infineon IC and come with a ready-to-use Arduino library. Customers can now develop their own system solutions by combining 2GO boards together with Infineon MyIoT adapters. MyIoT adapters are gateways to external hardware solutions like Arduino and Raspberry PI, which are popular IoT hardware platforms. All this enables the fastest evaluation and development of the IoT system. 20-300 V MOSFETs Shield2Go For more details on the product, click on the part number. 375 Shield2Go Shield2Go Sensors TLI4971 Current Sense Shield2Go Product name: S2GO_CUR-SENSE_TLI4971 SP: SP005345472 TLV493D 3DSense Shield2Go Product name: S2GO_3D-SENSE_TLV493D SP: SP001823678 TLE4964-3M Hall Sense Shield2Go S2GO_HALL_TLE4964-3M Product name: SP: SP004308590 TLE493DW2B6 3DSense Shield2Go Product name: S2GO_3D_TLE493DW2B6-A0 SP004308594 SP: TLE4966K Double Hall Shield2Go Product name: S2GO_2_HALL_TLE4966K SP004308598 SP: Microcontroller XMC 2Go Kit Product name: SP: KIT_XMC_2GO_XMC1100_V1 SP001199544 MyIoT Adapter Sales name: SP: MYIOTADAPTERTOBO1 SP002434972 MyIoT - Adapter Infineon's 2Go boards offer a unique customer and evaluation experience - the boards are equipped with one Infineon IC and come with a ready-to-use Arduino library. Customers can now develop their own system solutions by combining 2Go boards together with Infineon MyIoT adapters. MyIoT adapters are gateways to external hardware solutions like Arduino and Raspberry PI, which are popular IoT hardware platforms. All this enables the fastest evaluation and development of IoT system. www.infineon.com/s2go-myiot For more details on the product, click on the part number. 376 devices, including an on-board debugger. Build your own application and gadget with the sensor 2GO kits. Our 2GO kits are ready-to-use plug-and-play boards. 500-950 V MOSFETs Infineon's XENSIVTM sensor 2GO kits are budget-priced evaluation boards that are already equipped with a sensor combined with an Arm(R) Cortex(R)-M0 CPU. The sensor 2GO kits provide a complete set of on-board 20-300 V MOSFETs Sensor 2GO kits Applications Sensor 2GO kits WBG semiconductors 3D Magnetic Sensor 2GO kit Product name: TLE493D-A2B6 MS2GO/TLE493D-W2B6 MS2GO/ TLV493D-A1B6 MS2GO SP: SP001707582/SP001707578/ SP001707574 Features We offer three different derivatives - TLE493D-A2B6 (three dimensional magnetic sensor) - TLE493D-W2B6 (three dimensional magnetic sensor) - TLV493D-A1B6 (three dimensional magnetic sensor) XMC1100 (Arm(R) CortexTM-M0 based) On-board J-Link Lite Debugger (Realized with XMC4200 Microcontroller) Power over USB (Micro USB), ESD and reverse current protection GUI for free download Discrete IGBTs Power ICs TLI4970 current sensor 2GO kit Product name: TLI4970050 MS2GO SP: SP003119148 Features TLI4970-D050T4 (current sensor with digital interface) XMC1100 (Arm(R) Cortex(R)-M0 based) On-board J-link lite debugger (realized with XMC4200 microcontroller) Power over USB (micro USB), ESD and reverse current protection GUI for free download Intelligent switches and input ICs Gate driver ICs TLI4971 Current Sensor 2GO kit Product name: TLI4971_MS2GO SP: SP00534547 Features XENSIVTM magnetic current sensor TLI4971-A120T Sensor board for high current capability (20 A) Complete evaluation set including control and debug First measurements possible within minutes Microcontrollers Speed Sensor 2GO kit Product name: TLE4922 Speed-2-Go-Kit SP: SP001624692 Features Budget-priced evaluation board for speed sensing Complete speed sensor incl. back-bias magnet, fixing and cable TLE4922 (active mono cell Hall sensor) XMC1100 (Arm(R) CortexTM-M0 based) On-board J-Link Lite Debugger (realized with XMC4200 microcontroller) Power over USB (Micro USB), ESD and reverse current protection GUI based tool for real in-application evaluation for free download XENSIVTM sensors Packages www.infineon.com/sensors2go For more details on the product, click on the part number. 377 Sensor 2GO kits Sensor 2GO kits Angle Sensor 2GO kit Product name: TLE5012B_E1000_MS2GO/TLI5012B_E1000_MS2GO/ TLE5012B_E5000_MS2GO/TLE5012B_E9000_MS2GO SP: SP002133956/SP002133960/SP002133964/SP002133968 Features Budget-priced evaluation board for angle and position sensing We offer three four derivatives: - TLE5012B E1000 version: automotive predefined variant with SSC and IIF communication protocols - TLE5012B E5000 version: automotive predefined variant with SSC and PWM communication protocols - TLE5012B E9000 version: automotive predefined variant with SSC and SPC communication protocols - TLI5012B E1000 version: industrial predefined variant with SSC and IIF communication protocols TLE5012B/TLI5012B GMR digital angle sensor XMC1100 (Arm(R) CortexTM-M0 based) On-board J-Link Lite Debugger (realized with XMC4200 microcontroller) The kit is compatible with the angle rotate knob for fast evaluation GUI based tool for real in-application evaluation for free download MEMS 2Go Product name: EVAL_IM69D130_FLEXKIT SP: SP002153022 The flex evaluation kit allows simple and easy evaluation of XENSIVTM MEMS microphone IM69D130. The flex board can be easily connected to audio testing setup. The evaluation kit includes five IM69D130 mounted on flex board and one adapter board. Features Quick and easy evaluation of XENSIVTM MEMS microphones Flex dimensions: 25 x 4.5 mm Adapter dimensions: 20 x 15 mm www.infineon.com/sensors2go For more details on the product, click on the part number. 378 20-300 V MOSFETs Add ons for Sensor 2GO kits and Shield2Go Joystick for all 3D magnetic sensor 2GO kits and Shield2Go JOYSTICK FOR 3D 2 GO KIT 500-950 V MOSFETs Product name: SP: SP001491834 Features Easy mounting on all 3D magnetic sensor 2GO kits and Shield2Go First magnetic joystick measurements within minute WBG semiconductors Rotate knob for all 3D magnetic sensor 2GO kits, angle sensor 2GO kits and 3D magnetic sensor Shield2Go Product name: ROTATE KNOB 3D 2 GO KIT Discrete IGBTs SP: SP001504602 Features Easy mounting on all 3D magnetic and angle sensor 2GO kits as well as 3D magnetic sensor Shield2Go Rotate knob with magnet as used in control elements and push buttons Use cases 3D magnetic sensors: rotational and vertical movements of control elements and push buttons Use cases angle sensors: simulates rotational movements for angle measurements Power ICs Intelligent switches and input ICs Linear slider for all 3D magnetic sensor 2GO kits and Shield2Go Product name: LINEAR-SLIDER 2GO SP: SP002043034 Features Easy mounting on all 3D magnetic sensor 2GO kits and Shield2Go First magnetic linear evaluations within minutes Use case: linear movements Linear slider with magnet - flexible setup: adaptable air-gaps, two different magnetic strengths/materials and distance limiters Gate driver ICs Microcontrollers Out of shaft adapter for all 3D magnetic sensor 2GO kits and Shield2Go Product name: Applications Sensor 2GO kits OUT OF SHAFT FOR 3D 2 GO SP: SP003475178 Features Easy mounting on all 3D magnetic sensor 2GO kits and Shield2Go Use case: angle measurement in out of shaft configuration with 3D Hall sensor Three different out of shaft configurations possible (x-z, y-z and x-y axis) Magnetic rotation bar with ring magnet included XENSIVTM sensors Packages www.infineon.com/sensors2go For more details on the product, click on the part number. 379 Sensor 2GO kits Add ons for Sensor 2GO kits and Shield2Go Linear control trigger for all 3D magnetic sensor 2GO Kits and Shield2Go Product name: POWER_DRILL2GO Features Easy mounting on all 3D magnetic sensor 2GO Kits and Shield2Go Use case: control trigger for e.g. power drill (linear position measurements with 3D Hall sensor) Magnetic slider with magnet included Human machine interface (HMI) direction indicator for all 3D magnetic sensor 2GO Kits and Shield2Go Product name: DIR_INDICATOR2GO Features Easy mountig on all 3D magnetic sensor 2GO Kits and Shield2Go Use case: human-machine interface (3x3 position matrix) for e.g. automotive direction indicator Magnetic direction indicator with magnet included in handle bar HMI mini control with 4 directions and 360 rotation for all 3D magnetic sensor 2GO Kits and Shield2Go Product name: MINI_CONTROL2GO Features Easy mounting on all 3D magnetic sensor 2GO Kits and Shield2Go Use case: left/rigth/forwad and backward including 360 rotation at all positions Control element includes magnet www.infineon.com/sensors2go For more details on the product, click on the part number. 380 Applications 20-300 V MOSFETs 500-950 V MOSFETs WBG semiconductors Discrete IGBTs Power ICs Intelligent switches and input ICs Infineon support for sensors Useful links and helpful information www.infineon.com/angle-sensors www.infineon.com/3dmagnetic www.infineon.com/pressuresensor www.infineon.com/24GHz www.infineon.com/pressure Gate driver ICs Further information, datasheets and documents www.infineon.com/sensors www.infineon.com/microphones www.infineon.com/magnetic-sensors www.infineon.com/current-sensor www.infineon.com/hall-switches Microcontrollers 2GO evaluation kits www.infineon.com/sensors2go Packages XENSIVTM sensors Online simulation tools www.infineon.com/cms/en/product/sensor/#!simulation For more details on the product, click on the part number. 381 Packages Packages Surface mount device (SMD) technology Through-hole device (THD) technology For more details on the product, click on the part number. 382 Packages For more details on the product, click on the part number. 383 XENSIVTM sensors Microcontrollers Gate driver ICs Intelligent switches and input ICs Power ICs Discrete IGBTs WBG semiconductors 500-950 V MOSFETs 20-300 V MOSFETs Applications Package overview Packages Surface mount device (SMD) technology DPAK (TO-252-2) 2 9.9 x 6.5 x 2.3 DPAK (TO-252) 3 D2PAK (TO-263-2) 2 15.0 x 10.0 x 4.4 3 3.0 x 2.8 x 1.1 7 3.3 x 3.3 x 1.0 TDSON-10-7 10 3.0 x 3.0 x 0.9 TSON-8-3 8 5.0 x 6.0 x 1.0 3 x 3 x 0.75 2.9 x 2.4 x 1.0 2.0 x 2.1 x 0.9 5.15 x 6.15 x 1.0 3.3 x 3.3 x 1.0 5.0 x 5.0 x 1.0 3 x 3 x 0.75 2.0 x 2.1 x 0.9 5.15 x 6.15 x 1.0 TISON-8 8 7 7.0 x 7.0 x 1.0 3.3 x 3.3 x 1.0 WSON-10 10 4.0 x 4.0 x 0.8 15.0 x 10.0 x 4.4 HDSOP-22-1 22 2.9 x 1.6 x 1.3 6 2.9 x 2.5 x 1.1 7 15.0 x 10.0 x 4.4 TO-Leadless (TOLL) 15.0 x 10.0 x 4.4 8 11.68 x 9.9 x 2.3 SOT-223 4.5 x 4.0 x 1.5 4 PQFN 2x2 6 SuperSO8 fused leads 5.15 x 6.15 x 1.0 3 SOT-89 3 TSOP6 8 D2PAK (TO-263) 20.96 x 15.0 x 2.3 D2PAK 7-pin (TO-263) SOT-23-6 6 PQFN 2x2 dual 2.0 x 2.0 x 0.9 6 TDSON-8-47 8 6.5 x 7.0 x 1.6 2.0 x 2.0 x 0.9 TDSON-10-2 5.15 x 6.15 x 1.0 10 TISON-8 (power stage 5x6) TISON-8-4 (Power Block) 8 TSON-10 10 WSON-8-3 8 2.9 x 1.6 x 1.3 SuperSO8 dual 8 ThinPAK 5x6 (TSON-8) 8 15.0 x 10.0 x 4.4 20.96 x 6.5 x 2.3 TO263-7-13 SOT-363 6 TSDSON-8-25 fused leads 8 HDSOP-10-1 10 SOT-23-5 5 SuperSO8 8 WSON-6-1 6 7 SOT-323 3 PQFN 3.3x3.3 8 15.0 x 10.0 x 4.4 9.9 x 6.5 x 2.3 TO263-7-12 SOT-23 3 SOT223-3-1 6.5 x 7.0 x 1.6 DPAK 5-pin (TO-252) 5 TO263-7-11 SC59 3 9.9 x 6.5 x 2.3 5.0 x 6.0 x 1.0 TSNP-6-13 6 1.5 x 1 x 0.375 DirectFETTM Small Can V 4.8 x 3.8 x 0.65 8 5.0 x 6.0 x 1.0 TSON-8-1 8 ThinPAK 8x8 (VSON-4) 4 8.0 x 8.0 x 1.0 V 6.3 x 4.9 x 0.65 3.0 x 3.0 x 1.0 VDSON-8 8 DirectFETTM Medium Can 3.0 x 3.0 x 0.9 4.0 x 4.0 x 0.9 DirectFETTM Large Can V 9.1 x 6.98 x 0.71 Package (JEITA-code) X LxWxH pin-count V = Variable number of pins All dimensions in mm All products are RoHS Compliant. www.infineon.com/packages For more details on the product, click on the part number. 384 10.3 x 7.5 x 2.35 28 18.1 x 10.3 x 2.65 12.6 x 12.6 x 1.5 15.9 x 11.0 x 3.5 5 x 5 x 0.96 5 x 5 x 0.85 16 10.0 x 6.0 x 1.75 6 x 8.65 x 1.75 (max) 9.7 x 6.4 x 1.2 26.7 x 26.7 x 2.1 6 x 6 x 0.85 18 12.8 x 10.3 x 2.65 19 12.8 x 10.3 x 2.65 12.5 x 6.1 x 1.1 22.4 x 22.4 x 2.2 7 x 7 x 0.85 12 10.3 x 7.8 x 2.6 (max) 20 12.8 x 10.3 x 2.65 DSO-12 SO-20 LFBGA-516-5 516 25.3 x 25.3 x 2.8 LFBGA-292-6 292 TQFP-144-27 144 VQFN-48-78 (LTI) 48 6.0 x 6.0 x 0.8 SO-19 LQFP-144-22 144 40 SO-18 TSSOP-48 48 VQFN-48-60 48 5.0 x 6.0 x 1.2 IQFN-40 5.0 x 6.0 x 0.9 TDSO-16 16 LQFP-176-22 176 IQFN-39 39 SO-16 TSSOP-28 28 VQFN-40-13 40 7.5 x 6.0 x 0.9 SSOP-24 TFLGA-13-1 13 IQFN-36 36 SO-14 SO-36 36 TQFP-80-7 80 8.75 x 6.0 x 1.75 DSO-24 BGA-416-26 27.3 x 27.3 x 3.2 10.0 x 6.0 x 1.75 24 10.5 x 15.6 x 2.65 (max) 24 DSO-28 416 14 SO-16/12 12 DSO-16-30 (300 mil) 16 5.0 x 5.0 x 0.8 18.7 x 18.7 x 1.6 VQFN-56-5/-6 56 7 x 7 x 0.9 17.3 x 17.3 x 2.35 TQFP-100-23 100 14.5 x 14.5 x 1.5 Package (JEITA-code) X Applications 500-950 V MOSFETs 5.0 x 6.0 x 1.75 IQFN-31 (DrMOS 5x5) 31 WBG semiconductors SO-8/SO-8 dual 8 4.0 x 4.0 x 1.0 Discrete IGBTs IQFN-30 (DrMOS 4x4) 30 Power ICs 3.3 x 6.0 x 0.9 Intelligent switches and input ICs IQFN-27-2 27 20-300 V MOSFETs Package overview LxWxH pin-count V = Variable number of pins XENSIVTM sensors Microcontrollers Gate driver ICs All dimensions in mm All products are RoHS Compliant. Packages www.infineon.com/packages For more details on the product, click on the part number. 385 Package overview Through-hole device (THD) technology IPAK (TO251) 3 15.5 x 6.5 x 2.3 TO220 FullPAK 3 29.6 x 10.5 x 4.7 IPAK SL (TO251 SL) 3 41.3 x 10.9 x 5.18 3 28.25 x 10.5 x 4.5 29.6 x 10.5 x 4.7 25.1 x 10 x 4.4 3 28.85 x 11 x 4.7 7 9.52 x 8.9 x 4.37 3 A: 3.71 x 5.34 x 1 B: 2.68 x 5.34 x 1.2 TO-247 4-pin 4 Super220 3 I2PAK (TO262) 3 TO220 real 2-pin 2 40.15 x 15.9 x 5.0 3 34.6 x 15.6 x 5 6 21.7 x 9.9 x 4.4 8 9.52 x 8.9 x 4.37 DIP-7 Super247 29.15 x 10.0 x 4.4 TO220 2-pin 2 TO220-6-46 TO220 FullPAK Narrow Lead TO220 FullPAK Wide Creepage TO-247-3-AI 3 10.7 x 6.5 x 2.3 26.1 x 9.9 x 4.4 14 19.5 x 8.9 x 4.37 4.06 x 1.5 x 4.05 29.15 x 10.0 x 4.4 3 40.15 x 15.9 x 5.0 20 24.6 x 9.9 x 4.2 TO-247 DIP-14 SSO-3-10 3 TO220 3-pin 3 TO220-6-47 6 DIP-8 SSO-3-9 29.1 x 9.9 x 4.4 DIP-20 SSO-4-1 4 5.34 x 1.0 x 3.71 TO92S-3-1 3 4.0 x 1.52 x 3.15 A B 3 TO92S-3-2 Package (JEITA-code) 4.0 x 1.52 x 3.15 X LxWxH pin-count V = Variable number of pins All dimensions in mm All products are RoHS Compliant. www.infineon.com/packages For more details on the product, click on the part number. 386 Applications 20-300 V MOSFETs 500-950 V MOSFETs WBG semiconductors Discrete IGBTs Power ICs Intelligent switches and input ICs Infineon support for packages Gate driver ICs Useful links and helpful information Packages XENSIVTM sensors Microcontrollers Further information, datasheets and documents www.infineon.com/packages For more details on the product, click on the part number. 387 Infineon powerful support Useful links and helpful information General support www.infineon.com/support www.infineon.com/wheretobuy www.infineon.com/quality www.infineon.com/packages www.infineon.com/green www.infineon.com/opn Tools, desks and more www.infineon.com/solutionfinder www.infineon.com/lightdesk www.infineon.com/evaluationboards www.infineon.com/webinars Request reliability (FIT) data http://infineon-community.com/FIT_1 Register for the Newsletter4Engineers http://infineon-community.com/Newsletter4Engineers For more details on the product, click on the part number. 388 Applications 20-300 V MOSFETs A world leader in semiconductor solutions Our vision Power ICs Discrete IGBTs WBG semiconductors 500-950 V MOSFETs We are the link between the real and the digital world. Our values Our mission Part of your life. Part of tomorrow. For more details on the product, click on the part number. 389 Packages XENSIVTM sensors We make life easier, safer and greener. Microcontrollers Gate driver ICs Intelligent switches and input ICs We commit We partner We innovate We perform Where to buy Infineon distribution partners and sales offices: www.infineon.com/wheretobuy Service hotline Infineon offers its toll-free 0800/4001 service hotline as one central number, available 24/7 in English, Mandarin and German. Germany ..................... 0800 951 951 951 (German/English) China, mainland ........ 4001 200 951 (Mandarin/English) India ........................... 000 800 4402 951 (English) USA ............................. 1-866 951 9519 (English/German) Other countries .......... 00 * 800 951 951 951 (English/German) Direct access .............. +49 89 234-0 (interconnection fee, German/English) * Please note: Some countries may require you to dial a code other than "00" to access this international number. Please visit www.infineon.com/service for your country! Mobile product catalog Mobile app for iOS and Android. www.infineon.com Published by Infineon Technologies Austria AG 9500Villach, Austria (c) 2020 Infineon Technologies AG. All Rights Reserved. Please note! 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