N-CHANNEL ENHANCEMENT
MODE VERTICAL DMOS FET
ISSUE 2 – SEPT 93
FEATURES
* 200 Volt VDS
*R
DS(on)=23Ω
REFER TO BS107PT FOR GRAPHS
ABSOLUTE MAXIMUM RATINGS.
PARAMETER SYMBOL VALUE UNIT
Drain-Source Voltage V DS 200 V
Continuous Drain Current at Tamb=25°C ID0.12 A
Pulsed Drain Current IDM 2A
Gate-Source Voltage VGS ±20 V
Power Dissipation at Tamb =25°C Ptot 500 mW
Operating and Storage Temperature Range Tj:Tstg -55 to +150 °C
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C )
PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
Drain-Source
Breakdown Voltage BVDSS 200 230 V ID=100µA, VGS=0V
Gate Body Leakage IGSS 10 nA VGS=15V, VDS=0V
Drain Cut-Off Current IDSS 30 nA VGS=0V, VDS=130V
Drain Cut-Off Current IDSX 1µAVGS=0.2V, VDS=70V
Static Drain-Source
on-State Resistance RDS(on) 15 23
30 Ω
ΩVGS=2.6V, ID=25mA*
VGS=5V, ID=100mA*
* Measur ed under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2%
BS107P
3-23
D
G
S
E-Line
TO92 Compatible
