AMT8210
Rev 1.1 2
ELECTRICAL CHARACTERISTICS
Table 1: Absolute Maximum Ratings
PA RAMETER MIN MAX UNIT
Supply Voltage -0.5 +3.8 V
Optical Input Power - + 3 dBm
Storage Temperature - 40 + 125 oC
Stresses in excess of the absolute ratings may cause permanent damage. Functional
operation is not implied under these conditions. Exposure to absolute ratings for extended
periods of time may adversely affect reliability.
Table 2: Electrical Specifications
PA RAMETER MIN TYP MAX UNIT
Wavelength 1250 - 1620 nm
Detector Active Area - 75 - um
Sensitivity (1) -25.0 -27 - dB
Overload 0 - dBm
Responsivity 1550nm - 0.95 - A/W
Responsivity 1310nm - 0.85 - A/W
Small signal transimpedance gain (50 Ω) - 9.1 - KΩ
Small signal 3dB bandwidth 800 1000 - MHz
Output resistance 50 Ω
Output voltage swing (differential) 500 mVP-P
TIA supply voltage 2.97 3.3 3.6 V
TIA supply current - 21 mA
Power consumption - 70 mW
Operating temperature -40 +25 +85
oC
(1) 1.25Gb/s PRBS 231-1, 1550nm, ER >12dB, BER 10-10
Figure 2: Pin location (4-pin)
OUTQ OUT
VCC
GND
(Bottom View)
Figure 3: Pin location (5-pin)
VCC
OUTQ
GND
OUT
VPD
(Bottom View)
Table 3: Pin description
NA ME DESCRIPTION
OUT TIA Output (Non-Inverted)
VCC Supply Voltage (+3.3V)
OUTQ TIA Output (Inverted)
GND Ground