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VP0120
Advanced DMOS Technology
These enhancement-mode (normally-off) transistors utilize a
vertical DMOS structure and Supertex’s well-proven silicon-gate
manufacturing process. This combination produces devices with
the power handling capabilities of bipolar transistors and with the
high input impedance and positive temperature coefficient inher-
ent in MOS devices. Characteristic of all MOS structures, these
devices are free from thermal runaway and thermally-induced
secondary breakdown.
Supertex’s vertical DMOS FETs are ideally suited to a wide range
of switching and amplifying applications where high breakdown
voltage, high input impedance, low input capacitance, and fast
switching speeds are desired.
Note: See Package Outline section for dimensions.
P-Channel Enhancement-Mode
Vertical DMOS FETs
Package Options
Absolute Maximum Ratings
Drain-to-Source Voltage BVDSS
Drain-to-Gate Voltage BVDGS
Gate-to-Source Voltage ± 20V
Operating and Storage Temperature -55°C to +150°C
Soldering Temperature* 300°C
* Distance of 1.6 mm from case for 10 seconds.
Applications
■■Motor controls
■■Converters
■■Amplifiers
■■Switches
■■Power supply circuits
■■Drivers (relays, hammers, solenoids, lamps, memories,
displays, bipolar transistors, etc.)
Features
■■Free from secondary breakdown
■■Low power drive requirement
■■Ease of paralleling
■■Low CISS and fast switching speeds
■■Excellent thermal stability
■■Integral Source-Drain diode
■■High input impedance and high gain
■■Complementary N- and P-channel devices
Order Number / Package
BVDSS /R
DS(ON) ID(ON)
BVDGS (max) (min) TO-92 Die†
-200V 25Ω-100mA VP0120N3 VP0120ND
†MIL visual screening available
Ordering Information
TO-92
S G D
– OBSOLETE –
7-224
90%
10%
90%
90%
10% 10%
PULSE
GENERATOR
VDD
RL
OUTPUT
D.U.T.
t
(ON)
t
d(ON)
t
(OFF)
t
d(OFF)
t
F
t
r
INPUT
INPUT
OUTPUT
0V
VDD
Rgen
0V
-10V
Symbol Parameter Min Typ Max Unit Conditions
BVDSS -200
VGS(th) Gate Threshold Voltage -1.5 -3.5 V VGS = VDS, ID = -1.0mA
∆VGS(th) Change in VGS(th) with Temperature 6.0 mV/°CI
D = -1.0mA, VGS = VDS
IGSS Gate Body Leakage -100 nA VGS = ±20V, VDS = 0V
IDSS Zero Gate Voltage Drain Current -10 µAV
GS = 0V, VDS = Max Rating
VGS = 0V, VDS = 0.8 Max Rating
TA = 125°C
ID(ON) ON-State Drain Current -100 -400 VGS = -5V, VDS = -25V
-350 -750 VGS = -10V, VDS = -25V
RDS(ON) 25 40 VGS = -5V, ID = -50mA
15 25 VGS = -10V, ID = -100mA
∆RDS(ON) Change in RDS(ON) with Temperature 0.6 %/°CV
GS = -10V, ID = -100mA
GFS Forward Transconductance 50 70 m VDS = -25V, ID = -100mA
CISS Input Capacitance 50 60
COSS Common Source Output Capacitance 10 30 pF
CRSS Reverse Transfer Capacitance 5 10
td(ON) Turn-ON Delay Time 4 10
trRise Time 4 10
td(OFF) Turn-OFF Delay Time 4 10
tfFall Time 4 11
VSD Diode Forward Voltage Drop -1.0 V ISD = -0.5A, VGS = 0V
trr Reverse Recovery Time 500 ns ISD = -0.5A, VGS = 0V
Notes:
1. All D.C. parameters 100% tested at 25°C unless otherwise stated. (Pulse test: 300µs pulse, 2% duty cycle.)
2. All A.C. parameters sample tested.
VP0120
Switching Waveforms and Test Circuit
Package ID (continuous)* ID (pulsed) Power Dissipation
θ
jc
θ
ja IDR*I
DRM
@ TC = 25°C°C/W °C/W
TO-92 -0.1A -0.35A 1.0W 125 170 -0.1A -0.35A
* ID (continuous) is limited by max rated Tj.
Thermal Characteristics
mA
VGS = 0V, VDS = -25V
f = 1 MHz
Drain-to-Source
Breakdown Voltage
Static Drain-to-Source
ON-State Resistance
-1 mA
VI
D = -1.0mA, VGS = 0V
Electrical Characteristics (@ 25°C unless otherwise specified)
VDD = -25V
ns ID = -350mA
RGEN = 25Ω
Ω
Ω
– OBSOLETE –
7-225
9
7
Typical Performance Curves
VP0120
Output Characteristics
0 -10 -20 -30 -50-40
V
DS
(volts)
I
D
(amperes)
V
DS
(volts)
I
D
(amperes)
Saturation Characteristics
-0.5
-0.4
-0.3
-0.2
-0.1
0
0-2-4-6 -10-8
Maximum Rated Safe Operating Area
-0.1
-1.0
-10
-0.01
Thermal Response Characteristics
Thermal Resistance (normalized)
1.0
0.8
0.6
0.4
0.2
0.001 100.01 0.1 1
Transconductance vs. Drain Current
140
120
100
80
60
40
0 -1.0-0.2 -0.4 -0.6 -0.8
Power Dissipation vs. Case Temperature
0 15010050
25
20
15
10
5
0
1257525
D
P (watts)
TO-92
P
D
= 1W
T
C
= 25°C
TC = 25°C
0 -1000-100-10
T
A
= -55°C
T
A
= 25°C
T
A
= 125°C
V
DS
= -25V
V
GS
= -10V
-1.0
-0.8
-0.6
-0.4
-0.2
0
V
GS
= -10V
-6V
-8V
TO-92
-8V
-4V
-6V
-4V
0
TO-92 (DC)
G
FS
(millisiemens)
I
D
(amperes) T
C
(°C)
V
DS
(volts)
I
D
(amperes)
t
p
(seconds)
– OBSOLETE –
7-226
VP0120
Typical Performance Curves
Gate Drive Dynamic Characteristics
V(th) and RDS Variation with Temperature
On-Resistance vs. Drain Current
Transfer Characteristics
Capacitance vs. Drain-to-Source Voltage
80
60
40
20
0
C (picofarads)
BVDSS Variation with Temperature
0 -10 -20 -30 -40
0-2-4-6-8-10
-50 0 50 100 150
1.10
1.06
1.02
0.98
0.94
0.90
2.0
1.6
1.2
0.8
0.4
0
-50 0 50 100 150
-1.0
-0.8
-0.6
-0.4
-0.2
VDS = -25V
TA = -55°C
TA = 25°C
TA = 125°C
f = 1MHz
-10
-8
-6
-4
-2
0.2 0.4 0.6 0.8 1.00
100 pF
VDS = -40V
VDS = -10V
50pF
100
80
60
40
20
0 -1.5-0.3 -0.6 -0.9 -1.2
VGS = -5V
VGS = -10V
0
0
0
V(th) @ -1.0mA
RDS(ON) @ -10V, -100mA
RDS(ON) @ -5V, -50mA
1.25
1.0
0.75
100 pF
RDS(ON) (ohms)
BVDSS (normalized)
Tj (°C) ID (amperes)
Tj (°C)
VGS(th) (normalized)
VGS (volts)
ID (amperes)
RDS(ON) (normalized)
QG (nanocoulombs)
VGS (volts)
VDS (volts)
0.4
CISS
COSS
CRSS
– OBSOLETE –
