BEAM LEAD SCHOTTKY BARRIER MIXER DIODES ASIs Beam Lead Schottky Barrier Mixer Diodes are manufactured by the deposition of a suitable barrier metal on an epitaxial silicon layer to form a junction. These diodes are designed for applications up to 40 GHz for microwave integrated circuits and hybrid ele- ments in stripline and microstrip circuitry. Cy Several barrier heights are available which include: LOW BARRIER (N-TYPE) - for applications where the local oscillator ~~ drive level is between -10dBm and +10dBm MEDIUM BARRIER (N-TYPE) - for applications where the local oscillator drive level is between -5dBm and +15dBm HIGH BARRIER (N-TYPE) - for applications where the local oscillator drive level is between OdBm and +20dBm LOW BARRIER (P-TYPE) - for applications where low 1/f noise for use in Doppler radar and motion detectors is required. The Beam Lead Diodes are available as monolithic devices or mounted in a wide variety of epoxy lead frames and hermetically sealed packages. = All of the Beam Lead Schottky Barrier Mixer Diodes meet or exceed the Sa Military Environmental Specifications of MIL-S-19500 and Methods om from MIL-STD-750 and/or customer specifications. = = ABSOLUTE MAXIMUM RATINGS: Storage Temperature: -65C to +175C Operating Temperature: -65C to +150C RF CW Power (incident): 75mW Beam Terminal Strength: 4 grams minimumLOW BARRIER (N-TYPE) FREQUENCY TYPE Ne Cy VE VB Rs NUMBER (dB) @ OV @ 1mA @ 10:A @ 10mA (PF) (mov) ) (OHMS) MAX MIN MAX MIN MAX MIN MAX $s ABL3001 6.0 0.30 0.50 225 300 2.0 3 s ABL3002 6.5 0.30 0.50 225 300 2.0 7 X ABL9001 6.5 0.15 0.30 250 325 2.0 7 X ABL9002 7.0 0.15 0.30 250 325 2.0 12 Ku ABL1601 7.5 0.05 0.15 275 350 2.0 16 Ku ABL1602 8.0 0.05 0.15 275 350 2.0 25 FREQUENCY TYPE Ne cy VE VB Rs NUMBER (dB) @ OV @ 1mA @ 10pA @ 10mA (eF) (mn) ) (OHMS) MAX MIN MAX MIN MAX MIN MAX Ss ABM3001 6.0 0.30 0.50 300 400 3.0 4 x ABM9001 6.5 0.15 0.30 325 425 3.0 10 Kp ABM1601 7.5 0.05 0.15 350 450 3.0 16 FREQUENCY TYPE Ne Cy VE VB Rs NUMBER (dB) @ OV @ 1mA @ 10uA @ 10mA (PF) (mV) (V) (OHMS) MAX MIN MAX MIN MAX MIN MAX Ss ABH3001 6.0 0.30 0.50 550 625 4.0 4 x ABH9001 6.5 0.15 0.30 550 650 5.0 10 Kp ABH1601 7.5 0.05 0.15 600 750 5.0 13 FREQUENCY TYPE Ne Cy Ve VB Rs NUMBER (dB) @ OV @ 1mA @ 10pA @ 10mA (pF) (mv) (v) (OHMS) MAX MIN MAX MIN MAX MIN MAX x ABPS001 6.5 0.15 0.30 200 300 2.0 12 x ABP9002 7.0 0.15 0.30 200 300 2.0 18 Ku ABP1601 7.5 0.05 0.15 200 350 2.0 16 Kp ABP1602 8.0 0.05 0.15 200 350 2.0 25PACKAGE STYLES STYLE 700 BEAM THICKNESS: 00015 + .00004 (004 + 001) / 0%6 . | / (915) | 008 ) 010 (200) _ J (254) 013 012 (330) > (305) "| STYLE 710 STYLE 711 BEAM THICKNESS: BEAM THICKNESS: .00015 + .00004 .00015 + .00004 (004 + .001) (.004 + .001) 046 \ . 046 \ (1.17) - | Oe 027 (660) 0175 | (.444) (1.17) Sil 025 025 (.640) (.640) a we waar 004 (.100) BEAM THICKNESS: 00015 + 00008 s! ly (.004 + .001) 0295 (.750) STYLE 720 4 004 STYLE 721 +) (.100) > 4 PLACES _l [1] BEAM THICKNESS: 00015 + .00004 (004 + .001) 025 027 (640) (680) (80) 0295 * pap (750) - * (1.07) 042 (1.07) DIMENSIONS ABOVE ARE IN INCHES WITH MILLIMETERS IN PARENTHESESPACKAGE STYLES STYLE 800 =~ CATHODE TOP VIEW STYLE 802 =~ CATHODE TOP VIEW STYLE 805 2 TOP VIEW A410 (2.79) -~ 090 (2.29) 021 (.530 921 (630) y 4 PLACES { 079 (483) -~ h {ai 019 (. b L i L ] C L LL J 110 (2 A 105 @ 67) be 67) 705 267 080 (2.29) DIA "O95 (2.41) DIA "096 (2.41) DIA O95 (2.41) 2 PLACES Cava war) gulaall taauay ons egtaa|| Cassge meme) act 021 (530) 040 MAX 005 (.127 021 (.530) .040 MAX .005 (.127 021 (.530) 040 MAX 005 (.127 19(.483) (1.02) .003 (.076) 19(.483) (1.02) .003 (.076) 19 (.483) = (1.02) 003 (.076) STYLE 806 STYLE 807 COMMON_4.CATHODE CATHODE STYLE 801 {) STYLE 803 Glyn TOP VIEW TOP VIEW TOP VIEW TOP VIEW STYLE 808 STYLE 809 CATHODE STYLE 804 CATHODE TOP VIEW TOP VIEW TOP VIEW STYLE 820 STYLE 822 STYLE 825 CATHODE CATHODE TOP VIEW TOP VIEW TOP VIEW .135 (3.43) 0 0 115 (2.92) t 135 (3.43) r 135 17.43) 2 PLACES 017 (43) IL 415 (2.92) 017 He en OE Oa SHE A. 3 PLACES a 4 PLACES O13 (33) 043 (33) + 073 (3 _y ft f 055 (1.40) N_.055 (1.40) 055 (1 x S055 (1 1.40) 085 (1.40) NO 086 (1.40) 045 ( 1x > SS 045 (1.14) wsna< SS 045 (1 045 oe 045 (1 | _ pal = | earl + | aan 7 O12 (.30) O12 (30) O12 (20 008 (20) 040 MAX 005 | on .008 (20) .040 MAX 005 (127) 008 (20) 040 MAX 008 (27 SUBSTRATE (1.02) 003 (.076) SUBSTRATE (1.02) 003 (.076) SUBSTRATE (1.02) .003 (076) STYLE 826 STYLE 827 STYLE 821 STYLE 823 CATHODE COMMON o CATHODE TOP VIEW TOP VIEW TOP VIEW TOP VIEW STYLE 828 STYLE 829 STYLE 824 CATHODE CATHODE TOP VIEW TOP VIEW TOP VIEW DIMENSIONS ABOVE ARE IN INCHES WITH MILLIMETERS IN PARENTHESESPACKAGE STYLES STYLE 850 TOP VIEW + CATHODE 090 MIN (2.29) = a tf cg tt) Aa L 0.17 (43) 072 (1.82) 0.13 (33) SO 5 95) 2 PLACES + _| STYLE 852 1 1 CATHODE TOP VIEW (] i MIN [| (2.29) os eA | 0.17 (43) 072 (1.82 0.13 (33) sa 2 ac oS 3 PLACES ! a STYLE 855 TOP VIEW rr 090 MIN (2.29) a 1 oo Eo CO v L 0.17 (43) 072 (1.82) 0.13 (.33) SQ 068 (1. 73) 4 PLACES ! + _| (030 MAX j 1 030 MAX a { 030 MAX f { 020 (.50) (76) | -.1..005 (.127) | 020 (.50) (.76) g 005 (127) 020 (50) (76) | 41.005 (.127) 008 (20) 003 (.076) 008 (.20) S 003 (076) 008 (.20) 003 (076) STYLE 856 STYLE 857 COMMON | CATHODE | CATHODE STYLE 851 Ky STYLE 853 T CATHODE x | TOP VIEW TOP VIEW TOP VIEW ! ' TOP VIEW STYLE 858 STYLE 859 CATHODE | STYLE 854 [7 + CATHODE, ping 1p TOP VIEW TOP VIEW TOP VIEW STYLE 860 STYLE 862 STYLE 865 [7 + stletel CATHODE er F CATHODE TOP VIEW TOP VIEW TOP VIEW .104 (2.64) -104 (2.64) [S471 _, 104 (2.64) [S77 =} DIA "096 (2.44) 104 2.64) | | > 096 2.44) (] 175 (4.4a)|| 0962447 [] | f 175 ca.aq COVER e-{ [2 993 (2.34) COVER A | .125 6.18) COVER ial | .125 6.18) ZZ ac{ pe \ + oY GS / ZZ ={ = / f 029 (56) Y L_ 2t59 Be a: 022 (56) Y 078 (46) +> 018 ( 104 (2.64) 018(48) UW 104 (2.64 2 PLACES sag 3 PLACES SQ O90 (2.34) 4 PLACES (| SQ O92 (2.34) {| 5 (3.18) { ff SS | | ml | Los way 005 (1 bier 27) Locum wos han [ons 1.09 005 hen 028 (0.7 003 (076) 028 (0.71) 003 (.076) 028 (0.71) 003 (.076) STYLE 866 STYLE 867 COMMON | CATHODE | CATHODE STYLE 861 G STYLE 863 } CATHODE * q TT 7 Ts TOP VIEW TOP VIEW TOP view | TOP VIEW STYLE 868 STYLE 869 CATHODE ; STYLE 864 3 CATHODE|" $) 45 TOP VIEW TOP VIEW 'TOP VIEW DIMENSIONS ABOVE ARE IN INCHES WITH MILLIMETERS IN PARENTHESESPACKAGE STYLES 1. All of the beam lead devices are also available in chip form. STYLE 890 STYLE 892 STYLE 895 CATHODE = CATHODE TOP VIEW TOP VIEW TOP VIEW 104 (2.64) 260 (6.80) .104 (2.64) 104 (2.64) 260 (6.60) .092 (2.34) .200 (5.08) .092 (2.34) ,092 (2.34) [] 200 (5.08) 2 PLACES 2 PLACES 2 PLACES at} == & = a oo 017 (43) 017 (.43) 047 (.43) 110 MAX .013 (.33) 110 MAX (] .013 (.33) 110 MAX (] .013 (.33) (2.79) 2 PLACES (2.79) 3 PLACES (2.79) 4 PLACES 2 PLACES 2 PLACES 2 PLACES + t i + = + {ep + ee + Lore (30) .040 (1.02) 005 (.127) Lore (30) .040(1 wo 005 (.127) L ote (30) .040 noo) 005 (.127) .008 (20) .030(0.76) 003.076) .008 (20) .630(0.76) 003 (.076) 008 (20) .030(0.76) 003 (.076) STYLE 896 STYLE 897 STYLE 891 STYLE 893 COMMON CATHODE CATHODE Do TOP VIEW TOP VIEW TOP VIEW TOP VIEW STYLE 898 STYLE 899 STYLE 894 CATHODE CATHODE TOP VIEW TOP VIEW TOP VIEW DIMENSIONS ABOVE ARE IN INCHES WITH MILLIMETERS IN PARENTHESES NOTES: 2. When ordering add the three 3-digit package style suffix, i.e. ABM9001-720 is a medium barrier 6.5dB X-band monolithic ring quad. 3. AVE @ 1mA = 10mV for beam lead pairs AVF @1mA = 15mV for beam lead ring quads and bridge quads 4, NFi = 1.5dB; IF = 30 MHz; RL = 100 OHMS; L.O. = 1mW (for low and medium barrier types); L.O. = 2.0mW (for high barrier types); S-band = 3060 MHz; X-band = 9375 MHz; K-band = 16000 MHz. 5. Series resistance, Rs = Ry - Rp where RT = total resistance measured across the diode; Rg = barrier resistance, which equals 2.8 OHMS for Schottky Barrier Diodes measured at +10mA. 6. Cy, junction capacitance is measured at VR = 0 volts and f = 1.0 MHz. ASI THE ALTERNATIVE ADVANCED SEMICONDUCTOR INC. 7525 Ethel Ave. * North Hollywood. CA 91605 1-800-423-2354 (In Calif: 818-982-1202) * Telex: 18-2651 * FAX 818-765-3004