1
Subject to change without notice.
www.cree.com
CAS100H12AM1
1.2 kV, 100A Silicon Carbide
Half-Bridge Module
Z-FETTM MOSFET and Z-RecTM Diode
Datasheet: CAS100H12AM1,Rev. B
Features
• UltraLowLoss
• ZeroTurn-offTailCurrentfromMOSFET
• ZeroReverseRecoveryCurrentfromDiode
• High-FrequencyOperation
• PositiveTemperatureCoefcientonVFandVDS(on)
• AlSiCBaseplate,AMBSi3N4Substrate
System Benets
• EnablesCompactandLightweightSystems
• HighEfciencyOperation
• EaseofTransistorGateControl
• ReducedCoolingRequirements
• ReducedSystemCost
Applications
• HighPowerConverters
• MotorDrives
• SolarInverters
• UPSandSMPS
• InductionHeating

Package
 
Maximum Ratings (TC = 25˚C unless otherwise specied)
Symbol Parameter Value Unit Test Conditions Notes
VDS Drain-SourceVoltage 1.2 kV
VGS Gate-SourceVoltage -5/+20 V
IDContinuousDrainCurrent 168
A
VGS=20V,TC=25˚C Fig.25
117 VGS=20V,TC=90˚C
ID(pulse) PulsedDrainCurrent 400 APulsewidthLimitedbyTjmax,TC=25˚C
TJJunctionTemperature 150 ˚C
TC,TSTG CaseandStorageTemperatureRange -55to+125 ˚C
Visol CaseIsolationVoltage 6kV AC,t=1min
LStray StrayInductance 20 nH MeasuredfromD1toS2
M MountingTorque 2.94 Nm
G Weight 150 g Measuredwithoutfasteners
ClearanceDistance 12.2 mm Terminaltoterminal
CreepageDistance 17.3 mm Terminaltoterminal
20.2 mm Terminaltobaseplate
Pd PowerDissipation 568 WFig24
Part Number Package Marking
CAS100H12AM1 Half-BridgeModule CAS100H12AM1
VDS 1.2 kV
RDS(on) (TJ = 25˚C) 16 mΩ
EOFF
(TJ = 125˚C) 1.8 mJ
2CAS100H12AM1,Rev. B
Electrical Characteristics (TC = 25˚C unless otherwise specied)
Symbol Parameter Min. Typ. Max. Unit Test Conditions Note
V(BR)DSS Drain-SourceBreakdownVoltage 1.2 kV VGS,=0V,ID=100uA
VGS(th) GateThresholdVoltage
2.0 2.5
V
VDS=VGS,ID=5mA
Fig.9
2.6 3.1 VDS=VGS,ID=50mA
1.8 VDS=VGS,ID=5mA,TJ=150ºC
2.4 VDS=VGS,ID=50mA,TJ=150ºC
IDSS ZeroGateVoltageDrainCurrent 5 500 μA VDS=1200V,VGS=0V
50 1250 VDS=1200V,VGS=0V,TJ=150ºC
IGSS Gate-SourceLeakageCurrent 0.25 μA VGS,=20V,VDS=0V
RDS(on) OnStateResistance 16 20 mΩ VGS=20V,ID=100A Fig.7
20 24 VGS=20V,ID=100A,TJ=150ºC
gfs Transconductance 31 SVDS=20V,ID=100A Fig.8
32 VDS=20V,ID=100A,TJ=150ºC
Ciss InputCapacitance 10.7
nF VDS=600V,VGS=0V
f=1MHz,VAC=25mV
Fig.
16,17
Coss OutputCapacitance 0.970
Crss ReverseTransferCapacitance 0.037
EON Turn-OnSwitchingEnergy(25ºC)
(125ºC)
4.6
3.9 mJ VDD=800V,VGS=+20V/-5V
ID=100A,RG=5.1Ω
InductiveLoad=200μH
Note:IEC60747-8-4Denitions
Fig.21
EOff Turn-OffSwitchingEnergy(25ºC)
(125ºC)
1.7
1.8 mJ
RGInternalGateResistance 1.25 Ω f=1MHz,VAC=25mV
QGGateCharge 490 nC VDD=600V,ID=100A Fig.18
Resistive Switching
td(on) Turn-ondelaytime 58 ns
VDD=800V,RLOAD=8Ω
VGS=+20/-5VRG=5.1Ω
Note:IEC60747-8-4Denitions
Fig.
19,20
tr(on) VS1/D2falltime90%to10% 76 ns
td(off) Turn-offdelaytime 82 ns
tf(off) VS1/D2risetime10%to90% 46 ns
3CAS100H12AM1,Rev. B
Free-Wheeling SiC Schottky Diode Characteristics
Symbol Parameter Min. Typ. Max. Unit Test Conditions Note
VSD DiodeForwardVoltage 1.8 2.2 VIF=100A,VGS=0 Fig.11
2.5 IF=100A,TJ=150ºC Fig.12
QCTotalCapacitiveCharge 1.6 μC
IF=100A,VR=600V
diF/dt=2200A/μs,TJ=25ºC
tRR ReverseRecoveryTime 47 ns
ERR ReverseRecoveryEnergy 0.5 mJ
Thermal Characteristics
Symbol Parameter Min. Typ. Max. Unit Test Conditions Note
RthJCM ThermalResistanceJuction-to-CaseforMOSFET 0.22 0.24 ˚C/W
RthJCD ThermalResistanceJuction-to-CaseforDiode 0.35 0.37
Module Application Note:TheSiCMOSFETmoduleswitchesatspeedsbeyondwhatiscustomarilyassociatedwithIGBTbased
modules.Therefore,specialprecautionsarerequiredtorealizethebestperformance.Theinterconnectionbetweenthegatedriverand
modulehousingneedstobeasshortaspossible.Thiswillaffordthebestswitchingtimeandavoidthepotentialfordeviceoscillation.
Also,greatcareisrequiredtoinsureminimuminductancebetweenthemoduleandlinkcapacitorstoavoidexcessiveVDSovershoots.
PleaseRefertoapplicationnote:[CPWR-AN12]DesignConsiderationswhenusingCreeSiCModules.
4CAS100H12AM1,Rev. B
Typical Performance
0
20
40
60
80
100
120
140
160
180
200
0246810 12 14
Drain-Source Current, IDS (A)
Drain-Source Voltage, VDS (V)
V
GS
= 10 V
V
GS
= 15 V
V
GS
= 20 V
Conditions:
T
J
= -55 °C
tp < 50 µs
V
GS
= 5 V
0
20
40
60
80
100
120
140
160
180
200
0246810 12 14
Drain-Source Current, IDS (A)
Drain-Source Voltage, VDS (V)
V
GS
= 10 V
V
GS
= 15 V
V
GS
= 20 V Conditions:
T
J
= 25 °C
tp < 50 µs
V
GS
= 5 V
Figure2.TypicalOutputCharacteristicsTJ=25ºC
Figure1.TypicalOutputCharacteristicsTJ=-55ºC
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
-55 -30 -5 20 45 70 95 120 145
On Resistance, R
DS On
(p.u.)
Junction Temperature, T
J
(°C)
Conditions:
I
DS
= 100 A
V
GS
= 20 V
t
p
< 50 µs
0
20
40
60
80
100
120
140
160
180
200
0246810 12 14
Drain-Source Current, IDS (A)
Drain-Source Voltage, VDS (V)
V
GS
= 10 V
V
GS
= 15 V
V
GS
= 20 V Conditions:
T
J
= 150 °C
tp < 50 µs
V
GS
= 5 V
Figure4.NormalizedOn-Resistancevs.Temperature
Figure3.TypicalOutputCharacteristicsTJ=150ºC
0
10
20
30
40
50
60
-55 -30 -5 20 45 70 95 120 145
On Resistance, R
DS On
(mΩ)
Junction Temperature, T
J
(°C)
V
GS
= 20 V
V
GS
= 18 V
V
GS
= 16 V
V
GS
= 14 V
0
10
20
30
40
50
60
12 13 14 15 16 17 18 19 20
On Resistance, R
DS On
(mΩ)
Gate Source Voltage, V
GS
(V)
T
J
= 150 °C
T
J
= 25 °C
T
J
= -55 °C
Figure6.On-Resistancevs.GateSourceVoltagefor
VariousTemperature
Figure5.On-Resistancevs.Temperature
forVariousGate-SourceVoltages
5CAS100H12AM1,Rev. B
0
0.5
1
1.5
2
2.5
3
3.5
4
4.5
-55 -30 -5 20 45 70 95 120 145
Threshold Voltage, VGS(th) (V)
Junction Temperature, TJ(°C)
Conditions:
V
DS
= V
GS
I
DS
= 50 mA
I
DS
=5 mA
Typical Performance
0
5
10
15
20
25
020 40 60 80 100 120 140 160 180
On Resistance, R
DS On
(mΩ)
Drain Source Current, I
DS
(A)
T
J= 150 °C
TJ= 25 °C
TJ= -55 °C
TJ= 100 °C
0
20
40
60
80
100
120
0 5 10 15 20
Drain-Source Current, IDS (A)
Drain-Source Voltage, VDS (V)
T
J
= -55 °C
Conditions:
V
DS
= 20 V
tp < 50 µs
T
J
= 150 °C
T
J
=25 °C
Figure8.TransferCharacteristicsfor
VariousJunctionTemperatures
-200
-175
-150
-125
-100
-75
-50
-25
0
-4.0 -3.5 -3.0 -2.5 -2.0 -1.5 -1.0 -0.5 0.0
Drain-Source Current, IDS (A)
Drain-Source Voltage, VDS (V)
VGS = 0, -1, -2, -3 -4 -5 V
Conditions:
TJ= -55 °C
tp < 50 µs
Figure7.On-Resistancevs.DrainCurrent
forVariousTemperatures
Figure10.TypicalDiodeCharacteristics
TJ=-55ºC
Figure9.ThresholdVoltagevsJunctionTemperature
-200
-175
-150
-125
-100
-75
-50
-25
0
-4.0 -3.5 -3.0 -2.5 -2.0 -1.5 -1.0 -0.5 0.0
Drain-Source Current, I
DS
(A)
Drain-Source Voltage, V
DS
(V)
VGS = -4 and -5 V
VGS = -2 V
VGS = -1 V
VGS = -3 V
Conditions:
TJ= 25 °C
tp < 50 µs
VGS = 0 V
-200
-175
-150
-125
-100
-75
-50
-25
0
-4.0 -3.5 -3.0 -2.5 -2.0 -1.5 -1.0 -0.5 0.0
Drain-Source Current, I
DS
(A)
Drain-Source Voltage, V
DS
(V)
VGS = -5 V
VGS = -2 V
VGS = -1 V
VGS = -3 V
Conditions:
TJ= 150 °C
tp < 50 µs
VGS = 0 V
VGS = -4V
Figure11.TypicalDiodeCharacteristics
TJ=25ºC
Figure12.TypicalDiodeCharacteristics
TJ=150ºC
6CAS100H12AM1,Rev. B
-200
-175
-150
-125
-100
-75
-50
-25
0
-4.0 -3.5 -3.0 -2.5 -2.0 -1.5 -1.0 -0.5 0.0
Drain-Source Current, IDS (A)
Drain-Source Voltage, V
DS
(V)
V
GS
= 5 V
V
GS
= 10 V
V
GS
= 15 V
V
GS
= 20 V
Conditions:
T
J
= 150 °C
tp < 50 µs
V
GS
= 0 V
Typical Performance
-200
-175
-150
-125
-100
-75
-50
-25
0
-4.0 -3.5 -3.0 -2.5 -2.0 -1.5 -1.0 -0.5 0.0
Drain-Source Current, IDS (A)
Drain-Source Voltage, V
DS
(V)
V
GS
= 5 V
V
GS
= 10 V
V
GS
= 15 V
V
GS
= 20 V
Conditions:
T
J
= -55 °C
tp < 50 µs
V
GS
= 0 V
-200
-175
-150
-125
-100
-75
-50
-25
0
-4.0 -3.5 -3.0 -2.5 -2.0 -1.5 -1.0 -0.5 0.0
Drain-Source Current, IDS (A)
Drain-Source Voltage, V
DS
(V)
V
GS
= 5 V
V
GS
= 10 V
V
GS
= 15 V
V
GS
= 20 V
Conditions:
T
J
= 25 °C
tp < 50 µs
V
GS
= 0 V
Figure14.Typical3rdQuadrantCharacteristics
TJ=25ºC
1.E-11
1.E-10
1.E-09
1.E-08
1.E-07
020 40 60 80 100
Capacitance (F)
Drain-Source Voltage, VDS (V)
Ciss
Coss
Crss
Conditions:
ftest =1 MHz
VAC = 25 mV
Figure13.Typical3rdQuadrantCharacteristics
TJ=-55ºC
Figure16.TypicalCapacitancesvs.Drain-Source
Voltage(0-100V)
1.E-11
1.E-10
1.E-09
1.E-08
1.E-07
0100 200 300 400 500 600
Capacitance (F)
Drain-Source Voltage, V
DS
(V)
Ciss
Coss
Crss
Conditions:
f
test
=1 MHz
V
AC
= 25 mV
-5
0
5
10
15
20
0100 200 300 400 500
Gate Charge, Q
G
(nC)
Gate-Source Voltage, V
GS
(V)
Conditions:
I
DS
= 100 A
I
GS
= 50 mA
V
DS
= 800 V
T
J
= 25 °C
Figure15.Typical3rdQuadrantCharacteristics
TJ=150ºC
Figure17.TypicalCapacitancesvs.Drain-Source
Voltage(0-600V) Figure18.TypicalGateChargeCharacteristic
7CAS100H12AM1,Rev. B
0
1
2
3
4
5
6
7
020 40 60 80 100 120 140
Switching Energy (mJ)
Drain Current (A)
E
ON
E
OFF
Conditions:
V
GS
= +20V/-5V
R
G
= 5.1 Ohms
V
DD
= 800V
T
J
= 25 °C, L = 200 µH
Typical Performance
0
50
100
150
200
250
57911 13 15 17 19
Time (nsec)
External Gate Resistor (Ω)
t
d(on)
t
f(on)
Conditions:
V
GS
= +20V/-5V
R
Load
= 8 Ohms
V
DD
= 800V
T
J
= 25 °C
0
50
100
150
200
250
5 7 9 11 13 15 17 19
Time (nsec)
External Gate Resistor (Ω)
t
r(off)
t
d(off)
Conditions:
V
GS
= +20V/-5V
R
Load
= 8 Ohms
V
DD
= 800V
T
J
= 25 °C
Figure20.ResistiveSwitchingTimesvs.RG
(Turnoff)
0.0
2.5
5.0
7.5
10.0
12.5
15.0
57911 13 15 17 19 21
Switching Energy (mJ)
Gate Resistor (Ω)
EON
EOFF
Conditions:
VGS = +20V/-5V
IDS = 100 A
VDD = 800V
TJ= 25 °C, L = 200 µH
Figure19.ResistiveSwitchingTimesvs.RG
(Turnon)
Figure22.
ClampedInductiveSwitchingEnergyvs.
GateResistance
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
025 50 75 100 125 150
Switching Energy (mJ)
Junction Temperature, T
J
(C)
E
ON
E
OFF
Conditions:
VGS = +20V/-5V
RG= 5.1 Ohms
VDD = 800V
IDS = 100 A, L = 200 µH
0
100
200
300
400
500
600
-50 -25 025 50 75 100 125
Maximum Dissipated Power, Ptot (W)
Case Temperature, TC(°C)
Conditions:
T
J
≤ 150 °C
Figure21.ClampedInductiveSwitchingEnergyvs.
DrainCurrent
Figure23.ClampedInductiveSwitchingEnergyvs.
Temperature Figure24.PowerDissipationDeratingCurve
8CAS100H12AM1,Rev. B
0
20
40
60
80
100
120
140
160
180
-50 -25 025 50 75 100 125
Drain-Source Continous Current, IDS (DC) (A)
Case Temperature, TC(°C)
Conditions:
T
J
≤ 150 °C
Typical Performance
Figure25.ContinuousCurrentDeratingCurve
10E-6
100E-6
1E-3
10E-3
100E-3
1
1E-6 10E-6 100E-6 1E-3 10E-3 100E-3 1 10
Junction-Case Thermal Response, Z
th JC
(°C/W)
Time, tp(sec)
D = 50%
D = 30%
D = 10%
D = 5%
D = 2%
D = 1%
D = 0.5%
D = 0.2%
Single Pulse
D = t
p
/ T
t
p
T
Figure26.TransientThermalImpedance-MOSFET
Figure27.ResistiveSwitchingTimeDescription
9CAS100H12AM1,Rev. B
Circuit Diagram
M1
D1
22V
6.8V
R
G(int)
M2
D2
22V
6.8V
R
G(int)
G1 RTN
G1
G2 RTN
G2
D1
S1/D2
S2
10 CAS100H12AM1,Rev. B
Package Dimensions (mm)
1111 CAS100H12AM1,Rev. B
This product has not been designed or tested for use in, and is not intended for use in, applications implanted into the human body
nor in applications in which failure of the product could lead to death, personal injury or property damage, including but not limited
to equipment used in the operation of nuclear facilities, life-support machines, cardiac debrillators or similar emergency medical
equipment, aircraft navigation or communication or control systems, air trafc control systems, or weapons systems.
Copyright © 2013 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the
Cree logo are registered trademarks and Z-Rec is a trademark of Cree, Inc.
Cree, Inc.
4600 Silicon Drive
Durham, NC 27703
USA Tel: +1.919.313.5300
Fax: +1.919.313.5451
www.cree.com/power
Package Dimensions (mm)
PackageDimensions(mm)