BC807-16/-25/-40
Taiwan Semiconductor
1 Version: J2001
0.3W, PNP Plastic-Encapsulate Transistor
FEATURES
Low power loss, high efficiency
Ideal for automated placement
High surge current capability
Moisture sensitivity level: level 1, per J-STD-020
RoHS Compliant
Halogen-free according to IEC 61249-2-21
APPLICATIONS
Switching mode power supply (SMPS)
Adapters
Lighting application
On-board DC/DC converter
MECHANICAL DATA
Case: SOT-23
Molding compound meets UL 94 V-0 flammability rating
Terminal: Matte tin plated leads, solderable per J-STD-002
Meet JESD 201 class 1A whisker test
Weight: 0.008grams (approximately)
KEY PARAMETERS
PARAMETER VALUE UNIT
VCBO -50 V
VCEO -45 V
VEBO -5 V
IC -0.5 A
hFE 250-600
Package SOT-23
Configuration Single die
ABSOLUTE MAXIMUM RATINGS
(TA = 25°C unless otherwise noted)
PARAMETER
SYMBOL
VALUE
UNIT
Marking code on the device
BC807-16 5A
BC807-25 5B
BC807-40 5C
Power dissipation PD 0.3 W
Collector-base voltage, emitter open IC = -10 μA, IE = 0 VCBO -50 V
Collector-emitter voltage, base open IC = -10 mA, IB = 0 VCEO -45 V
Emitter-base voltage, collector open IE = -1 μA, IC = 0 VEBO -5 V
Collector current, dc IC -0.5 A
Junction temperature TJ -55 to +150 °C
Storage temperature TSTG -55 to +150 °C
BC807-16/-25/-40
Taiwan Semiconductor
2 Version: J2001
ELECTRICAL SPECIFICATIONS
(TA = 25°C unless otherwise noted)
PARAMETER CONDITIONS SYMBOL MIN TYP MAX UNIT
Collector cutoff current, emitter
open VCB = -45 V, IE = 0 ICBO - - -0.1 µA
Emitter cutoff current, collector
open VEB = -4 V, IC = 0 IEBO - - -0.1 µA
DC current gain VCE = -1 V,
IC = -100 mA
BC807-16
hFE
100 - 250
BC807-25 160 - 400
BC807-40 250 - 600
Collector-emitter saturation
voltage IC = -500 mA, IB = -50 mA VCE(sat) - - -0.7 V
Base-emitter saturation
voltage IC = -500 mA, IB = -50 mA VBE(sat) - - -1.2 V
Transition frequency VCE = -5 V , IC = -10 mA,
f= 50MHz fT 100 - - MHz
ORDERING INFORMATION
ORDERING CODE
(Note1, 2) PACKAGE PACKING
BC807-XX RF SOT-23 3K / 7" Reel
BC807-XX RFG SOT-23 3K / 7" Reel
Note:
1. "xx" is Device Code is"16" and "25" and "40"
2. “G” means green compound (halogen free)
BC807-16/-25/-40
Taiwan Semiconductor
3 Version: J2001
CHARACTERISTICS CURVES
(TA = 25°C unless otherwise noted)
Fig.1 Power Derating Curve
Fig. 2 Gain Bandwidth Product VS.
Collector Current
Fig.3 Collector Sat Voltage VS. Collector Current
Fig.4 DC Current Gain VS. Collector Current
0
100
200
300
400
0 50 100 150 200
10
100
1000
1 10 100 1000
TA= 25 oC
f = 20 MHz
-VCE = 5.0 V
-VCE = 1 V
0.1
1
10
100
1000
0 0.1 0.2 0.3 0.4 0.5
-IC / -IB= 10
Typical
- - - - - - - - Limits
at TA= 25 oC
- 50 oC
25 oC
150
oC
10
100
1000
0.1 1 10 100 1000
-VCE = 1V
150 oC
25 oC
- 50 oC
fT, Gain Bandwidth Product (MHz)
TSB, Substrate Temperature (
o
C)
-VCESAT , Collector Saturation Voltage (V)
IC, Collector Current (mA)
PD, Power Dissipation (mW)
-IC, Collector Current (mA)
-IC , Collector Current (mA)
hFE , DC Current Gain
BC807-16/-25/-40
Taiwan Semiconductor
4 Version: J2001
CHARACTERISTICS CURVES
(TA = 25°C unless otherwise noted)
Fig.5 Typical Emitter-Collector Characteristics
Fig. 6 Typical Transient Thermal
Characteristics
0
100
200
300
400
500
0 1 2
- IB = 0.2 mA
0.4
0.6
0.8
1.0 1.2
3.2
1.4
2.8
2.4
2.0
1.8
1.6
0
20
40
60
80
100
0 10 20
- I
B
= 0.05 mA
0.1
0.15
0.2
0.25
0.3
0.35
0.4
-IC , Collector Current ( mA )
-VCE , Collector-Emitter Voltage (V) -VCE , Collector-Emitter Voltage (V)
-Ic , Collector Current (mA)
BC807-16/-25/-40
Taiwan Semiconductor
5 Version: J2001
PACKAGE OUTLINE DIMENSION
SOT-23
SUGGESTED PAD LAYOUT
BC807-16/-25/-40
Taiwan Semiconductor
6 Version: J2001
Notice
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