FCPF16N60NT - ON SEMICONDUCTOR

To learn more about ON Semiconductor, please visit our website at

www.onsemi.com

Please note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers

will need to change in order to meet ON Semiconductor’s system requirements. Since the ON Semiconductor

product management systems do not have the ability to manage part nomenclature that utilizes an underscore

(_), the underscore (_) in the Fairchild part numbers will be changed to a dash (-). This document may contain

device numbers with an underscore (_). Please check the ON Semiconductor website to verify the updated

device numbers. The most current and up-to-date ordering information can be found at www.onsemi.com. Please

email any questions regarding the system integration to Fairchild_questions@onsemi.com.

Is Now Part of

ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number

of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. ON Semiconductor reserves the right

to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability

arising out of the application or use of any product or circuit, and speciﬁcally disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON

Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON

Semiconductor data sheets and/or speciﬁcations can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s

technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA

Class 3 medical devices or medical devices with a same or similar classiﬁcation in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended

or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its ofﬁcers, employees, subsidiaries, afﬁliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out

of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor

is an Equal Opportunity/Afﬁrmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.

November 2013

FCP16N60N / FCPF16N60NT — N-Channel SupreMOS® MOSFET

FCP16N60N / FCPF16N60NT Rev. C1

www.fairchildsemi.com

TO-220

GDS

TO-220F

GDS

FCP16N60N / FCPF16N60NT

N-Channel SupreMOS® MOSFET

600 V, 16 A, 199 mΩ

Features

•R

DS(on) = 170 mΩ (Typ.) @ VGS = 10 V, ID = 8 A

• Ultra Low Gate Charge (Typ. Qg = 40.2 nC)

• Low Effective Output Capacitance (Typ. Coss(eff.) = 176 pF)

• 100% Avalanche Tested

• RoHS Compliant

Application

• LCD/LED/PDP TV

• Lighting

• Solar Inverter

• AC-DC Power Supply

Description

The SupreMOS® MOSFET is Fairchild Semiconductor’s next

generation of high voltage super-junction (SJ) technology

employing a deep trench filling process that differentiates it from

the conventional SJ MOSFETs. This advanced technology and

precise process control provides lowest Rsp on-resistance,

superior switching performance and ruggedness. SupreMOS

MOSFET is suitable for high frequency switching power con-

verter applications such as PFC, server/telecom power, FPD TV

power, ATX power, and industrial power applications.

Absolute Maximum Ratings TC = 25oC unless otherwise noted.

Thermal Characteristics

Symbol Parameter FCP16N60N FCPF16N60NT Unit

VDSS Drain to Source Voltage 600 V

VGSS Gate to Source Voltage ±30 V

IDDrain Current - Continuous (TC = 25oC) 16.0 16.0* A

- Continuous (TC = 100oC) 10.1 10.1*

IDM Drain Current - Pulsed (Note 1) 48.0 48.0* A

EAS Single Pulsed Avalanche Energy (Note 2) 355 mJ

IAR Avalanche Current (Note 1) 5.3 A

EAR Repetitive Avalanche Energy (Note 1) 1.34 mJ

dv/dt MOSFET dv/dt 100 V/ns

Peak Diode Recovery dv/dt (Note 3) 20 V/ns

PDPower Dissipation (TC = 25oC) 134.4 35.7 W

- Derate Above 25oC 1.08 0.29 W/oC

TJ, TSTG Operating and Storage Temperature Range -55 to +150 oC

TLMaximum Lead Temperature for Soldering, 1/8” from Case for 5 Seconds 300 oC

Symbol Parameter FCP16N60N FCPF16N60NT Unit

RθJC Thermal Resistance, Junction to Case, Max. 0.93 3.5 oC/W

RθJA Thermal Resistance, Junction to Ambient, Max. 62.5 62.5

*Drain current limited by maximum junction temperature.

FCP16N60N / FCPF16N60NT — N-Channel SupreMOS® MOSFET

FCP16N60N / FCPF16N60NT Rev. C1

www.fairchildsemi.com

Package Marking and Ordering Information

Electrical Characteristics TC = 25oC unless otherwise noted.

Off Characteristics

On Characteristics

Dynamic Characteristics

Switching Characteristics

Drain-Source Diode Characteristics

Part Number Top Mark Package Packing Method Reel Size Tape Width Quantity

FCP16N60N FCP16N60N TO-220 Tube N/A N/A 50 units

FCPF16N60NT FCPF16N60NT TO-220F Tube N/A N/A 50 units

Symbol Parameter Test Conditions Min. Typ. Max. Unit

BVDSS Drain to Source Breakdown Voltage ID = 1 mA, VGS = 0V, TC = 25oC 600 - - V

ΔBVDSS

/ ΔTJ

Breakdown Voltage Temperature

Coefficient ID = 1 mA, Referenced to 25oC - 0.73 - V/oC

IDSS Zero Gate Voltage Drain Current VDS = 480 V, VGS = 0 V - - 10 μA

VDS = 480 V, VGS = 0 V, TC = 125oC - - 100

IGSS Gate to Body Leakage Current VGS = ±30 V, VDS = 0 V - - ±100 nA

VGS(th) Gate Threshold Voltage VGS = VDS, ID = 250 μA2.0-4.0V

RDS(on) Static Drain to Source On Resistance VGS = 10 V, ID = 8 A - 0.170 0.199 Ω

gFS Forward Transconductance VDS = 40 V, ID = 8 A - 13 - S

Ciss Input Capacitance VDS = 100 V, VGS = 0 V,

f = 1 MHz

- 1630 2170 pF

Coss Output Capacitance - 70 95 pF

Crss Reverse Transfer Capacitance - 5 10 pF

Coss Output Capacitance VDS = 380 V, VGS = 0 V, f = 1 MHz - 40 60 pF

Coss(eff.) Effective Output Capacitance VDS = 0 V to 480 V, VGS = 0 V - 176 - pF

Qg(tot) Total Gate Charge at 10V VDS = 380 V, ID = 8 A,

VGS = 10 V

(Note 4)

- 40.2 52.3 nC

Qgs Gate to Source Gate Charge - 6.7 - nC

Qgd Gate to Drain “Miller” Charge - 12.9 - nC

ESR Equivalent Series Resistance (G-S) f = 1 MHz 2.9 Ω

td(on) Turn-On Delay Time

VDD = 380 V, ID = 8 A,

VGS = 10 V, RG = 4.7 Ω

(Note 4)

- 15.8 41.6 ns

trTurn-On Rise Time - 15.5 41.0 ns

td(off) Turn-Off Delay Time - 60.3 130.6 ns

tfTurn-Off Fall Time - 20.2 50.4 ns

ISMaximum Continuous Drain to Source Diode Forward Current - - 16 A

ISM Maximum Pulsed Drain to Source Diode Forward Current - - 48 A

VSD Drain to Source Diode Forward Voltage VGS = 0 V, ISD = 8 A - - 1.2 V

trr Reverse Recovery Time VGS = 0 V, ISD = 8 A,

dIF/dt = 100 A/μs

- 319 - ns

Qrr Reverse Recovery Charge - 4.4 - μC

Notes:

1. Repetitive rating: pulse-width limited by maximum junction temperature.

2. IAS = 5.3 A, RG = 25 Ω, starting TJ = 25°C.

3. ISD ≤ 16 A, di/dt ≤ 200 A/μs, VDD = 380 V, starting TJ = 25°C

4. Essentially independent of operating temperature typical characteristics.

FCP16N60N / FCPF16N60NT — N-Channel SupreMOS® MOSFET

FCP16N60N / FCPF16N60NT Rev. C1

www.fairchildsemi.com

Typical Performance Characteristics

Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics

Figure 3. On-Resistance Variation vs. Figure 4. Body Diode Forward Voltage

Drain Current and Gate Voltage Variation vs. Source Current

and Temperature

Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics

0.1 1 10 20

0.1

100

*Notes:

1. 250μs Pulse Test

2. TC = 25oC

VGS = 15.0 V

10.0 V

8.0 V

7.0 V

6.0 V

5.0 V

4.5 V

4.0 V

ID, Drain Current[A]

VDS, Drain-Source Voltage[V]

2468

0.1

100

-55oC

150oC

*Notes:

1. VDS = 20V

2. 250μs Pulse Test

25oC

ID, Drain Current[A]

VGS, Gate-Source Voltage[V]

0 1020304050

0.1

0.2

0.3

0.4

0.5

0.6

*Notes: TC = 25oC

VGS = 20V

VGS = 10V

RDS(ON) [Ω],

Drain-Source On-Resistance

ID, Drain Current [A]

0.20.40.60.81.01.21.41.6

100

*Notes:

1. VGS = 0V

2. 250μs Pulse Test

150oC

IS, Reverse Drain Current [A]

VSD, Body Diode Forward Voltage [V]

25oC

0.1 1 10 100 600

2500

5000

7500

10000

Coss

Ciss

Ciss = Cgs + Cgd (Cds = shorted)

Coss = Cds + Cgd

Crss = Cgd

*Notes:

1. VGS = 0V

2. f = 1MHz

Crss

Capacitances [pF]

VDS, Drain-Source Voltage [V]

0 1020304050

*Notes: ID = 8A

VDS = 120V

VDS = 380V

VDS = 480V

VGS, Gate-Source Voltage [V]

Qg, Total Gate Charge [nC]

FCP16N60N / FCPF16N60NT — N-Channel SupreMOS® MOSFET

FCP16N60N / FCPF16N60NT Rev. C1

www.fairchildsemi.com

Typical Performance Characteristics (Continued)

Figure 7. Breakdown Voltage Variation Figure 8. On-Resistance Variation

vs. Temperature vs. Temperature

Figure 9. Maximum Safe Operating Area Figure 10. Maximum Safe Operating Area

for FCP16N60N for FCPF16N60NT

Figure 11. Maximum Drain Current

vs. Case Temperature

-100 -50 0 50 100 150 200

0.8

0.9

1.0

1.1

1.2

*Notes:

1. VGS = 0V

2. ID = 1mA

BVDSS, [Normalized]

Drain-Source Breakdown Voltage

TJ, Junction Temperature [

oC]

-100 -50 0 50 100 150 200

0.0

0.5

1.0

1.5

2.0

2.5

3.0

*Notes:

1. VGS = 10V

2. ID = 8A

RDS(on), [Normalized]

Drain-Source On-Resistance

TJ, Junction Temperature [

oC]

1 10 100 1000

0.01

0.1

100

20μs

100μs

1ms

10ms

ID, Drain Current [A]

VDS, Drain-Source Voltage [V]

Operation in This Area

is Limited by R DS(on)

*Notes:

1. TC = 25oC

2. TJ = 150oC

3. Single Pulse

1 10 100 1000

0.01

0.1

100

20μs

100μs

1ms

10ms

ID, Drain Current [A]

VDS, Drain-Source Voltage [V]

Operation in This Area

is Limited by R DS(on)

*Notes:

1. TC = 25oC

2. TJ = 150oC

3. Single Pulse

25 50 75 100 125 150

ID, Drain Current [A]

TC, Case Temperature [

oC]

FCP16N60N / FCPF16N60NT — N-Channel SupreMOS® MOSFET

FCP16N60N / FCPF16N60NT Rev. C1

www.fairchildsemi.com

Typical Performance Characteristics (Continued)

Figure 12. Transient Thermal Response Curve for FCP16N60N

Figure 13. Transient Thermal Response Curve for FCPF16N60NT

10-5 10-4 10-3 10-2 10-1 1

0.005

0.01

0.1

0.01

0.1

0.2

0.05

0.02 *Notes:

1. ZθJC(t) = 0.93oC/W Max.

2. Duty Factor, D= t1/t2

3. TJM - TC = PDM * ZθJC(t)

0.5

Single pulse

Thermal Response [ZθJC]

Rectangular Pulse Duration [sec]

(t), Thermal Response [

C/W]

, Rectangular Pulse Duration [sec]

10-5 10-4 10-3 10-2 10-1 11010

0.01

0.1

0.01

0.1

0.2

0.05

0.02

*Notes:

1. ZθJC(t) = 3.5oC/W Max.

2. Duty Factor, D= t1/t2

3. TJM - TC = PDM * ZθJC(t)

0.5

Single pulse

Thermal Response [ZθJC]

Rectangular Pulse Duration [sec]

(t), Thermal Response [

C/W]

, Rectangular Pulse Duration [sec]

FCP16N60N / FCPF16N60NT — N-Channel SupreMOS® MOSFET

FCP16N60N / FCPF16N60NT Rev. C1

www.fairchildsemi.com

Figure 14. Gate Charge Test Circuit & Waveform

Figure 15. Resistive Switching Test Circuit & Waveforms

Figure 16. Unclamped Inductive Switching Test Circuit & Waveforms

VGS

VDS

10%

90%

td(on) tr

ton toff

td(off) tf

VDD

10V

VDS

DUT

VGS

VDS

10%

90%

td(on) tr

ton toff

td(off) tf

VDD

10V

VDS

DUT

VGS

IG = const.

FCP16N60N / FCPF16N60NT — N-Channel SupreMOS® MOSFET

FCP16N60N / FCPF16N60NT Rev. C1

www.fairchildsemi.com

Figure 17. Peak Diode Recovery dv/dt Test Circuit & Waveforms

DUT

VDS

Driver

RGSame Type

as DUT

VGS • dv/dt controlled by RG

•I

SD controlled by pulse period

VDD

ISD

10V

VGS

( Driver )

ISD

( DUT )

VDS

( DUT )

VDD

Body Diode

Forward Voltage Drop

VSD

IFM , Body Diode Forward Current

Body Diode Reverse Current

IRM

Body Diode Recovery dv/dt

di/dt

D = Gate Pulse Width

Gate Pulse Period

--------------------------

DUT

VDS

Driver

RGSame Type

as DUT

VGS • dv/dt controlled by RG

•I

SD controlled by pulse period

VDD

ISD

10V

VGS

( Driver )

ISD

( DUT )

VDS

( DUT )

VDD

Body Diode

Forward Voltage Drop

VSD

IFM , Body Diode Forward Current

Body Diode Reverse Current

IRM

Body Diode Recovery dv/dt

di/dt

D = Gate Pulse Width

Gate Pulse Period

--------------------------

D = Gate Pulse Width

Gate Pulse Period

--------------------------

FCP16N60N / FCPF16N60NT — N-Channel SupreMOS® MOSFET

FCP16N60N / FCPF16N60NT Rev. C1

www.fairchildsemi.com

Mechanical Dimensions

Figure 18. TO-220, Molded, 3-Lead, Jedec Variation AB

Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner

without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or

obtain the most recent revision. Package specifications do not expand the terms of Fairchild’s worldwide terms and conditions, specif-

ically the warranty therein, which covers Fairchild products.

Always visit Fairchild Semiconductor’s online packaging area for the most recent package drawings:

http://www.fairchildsemi.com/package/packageDetails.html?id=PN_TT220-003

FCP16N60N / FCPF16N60NT — N-Channel SupreMOS® MOSFET

FCP16N60N / FCPF16N60NT Rev. C1

www.fairchildsemi.com

Mechanical Dimensions

Figure 19. TO220, Molded, 3-Lead, Full Pack, EIAJ SC91, Straight Lead

Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner

without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or

obtain the most recent revision. Package specifications do not expand the terms of Fairchild’s worldwide terms and conditions, specif-

ically the warranty therein, which covers Fairchild products.

Always visit Fairchild Semiconductor’s online packaging area for the most recent package drawings:

http://www.fairchildsemi.com/package/packageDetails.html?id=PN_TF220-003

FCP16N60N / FCPF16N60NT — N-Channel SupreMOS® MOSFET

FCP16N60N / FCPF16N60NT Rev. C1

www.fairchildsemi.com

TRADEMARKS

The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not

intended to be an exhaustive list of all such trademarks.

*Trademarks of System General Corporation, used under license by Fairchild Semiconductor.

DISCLAIMER

FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE

RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY

PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.

THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY

THEREIN, WHICH COVERS THESE PRODUCTS.

LIFE SUPPORT POLICY

FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE

EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.

As used here in:

1. Life support devices or systems are devices or systems which, (a) are

intended for surgical implant into the body or (b) support or sustain life,

and (c) whose failure to perform when properly used in accordance with

instructions for use provided in the labeling, can be reasonably

expected to result in a significant injury of the user.

2. A critical component in any component of a life support, device, or

system whose failure to perform can be reasonably expected to cause

the failure of the life support device or system, or to affect its safety or

effectiveness.

PRODUCT STATUS DEFINITIONS

Definition of Terms

AccuPower™

AX-CAP®*

BitSiC™

Build it Now™

CorePLUS™

CorePOWER™

CROSSVOLT™

CTL™

Current Transfer Logic™

DEUXPEED®

Dual Cool™

EcoSPARK®

EfficentMax™

ESBC™

Fairchild®

Fairchild Semiconductor®

FACT Quiet Series™

FACT®

FAST®

FastvCore™

FETBench™

FPS™

F-PFS™

FRFET®

Global Power ResourceSM

GreenBridge™

Green FPS™

Green FPS™ e-Series™

Gmax™

GTO™

IntelliMAX™

ISOPLANAR™

Marking Small Speakers Sound Louder

and Better™

MegaBuck™

MICROCOUPLER™

MicroFET™

MicroPak™

MicroPak2™

MillerDrive™

MotionMax™

mWSaver®

OptoHiT™

OPTOLOGIC®

OPTOPLANAR®

PowerTrench®

PowerXS™

Programmable Active Droop™

QFET®

QS™

Quiet Series™

RapidConfigure™

Saving our world, 1mW/W/kW at a time™

SignalWise™

SmartMax™

SMART START™

Solutions for Your Success™

SPM®

STEALTH™

SuperFET®

SuperSOT™-3

SuperSOT™-6

SuperSOT™-8

SupreMOS®

SyncFET™

Sync-Lock™

®*

TinyBoost®

TinyBuck®

TinyCalc™

TinyLogic®

TINYOPTO™

TinyPower™

TinyPWM™

TinyWire™

TranSiC™

TriFault Detect™

TRUECURRENT®*

μSerDes™

UHC®

Ultra FRFET™

UniFET™

VCX™

VisualMax™

VoltagePlus™

XS™

™

Datasheet Identification Product Status Definition

Advance Information Formative / In Design Datasheet contains the design specifications for product development. Specifications

may change in any manner without notice.

Preliminary First Production

Datasheet contains preliminary data; supplementary data will be published at a later

date. Fairchild Semiconductor reserves the right to make changes at any time without

notice to improve design.

No Identification Needed Full Production Datasheet contains final specifications. Fairchild Semiconductor reserves the right to

make changes at any time without notice to improve the design.

Obsolete Not In Production Datasheet contains specifications on a product that is discontinued by Fairchild

Semiconductor. The datasheet is for reference information only.

ANTI-COUNTERFEITING POLICY

Fairchild Semiconductor Corporation’s Anti-Counterfeiting Policy. Fairchild’s Anti-Counterfeiting Policy is also stated on our external website,

www.Fairchildsemi.com, under Sales Support.

Counterfeiting of semiconductor parts is a growing problem in the industry. All manufactures of semiconductor products are experiencing counterfeiting of their

parts. Customers who inadvertently purchase counterfeit parts experience many problems such as loss of brand reputation, substandard performance, failed

application, and increased cost of production and manufacturing delays. Fairchild is taking strong measures to protect ourselves and our customers from the

proliferation of counterfeit parts. Fairchild strongly encourages customers to purchase Fairchild parts either directly from Fairchild or from Authorized Fairchild

Distributors who are listed by country on our web page cited above. Products customers buy either from Fairchild directly or from Authorized Fairchild

Distributors are genuine parts, have full traceability, meet Fairchild’s quality standards for handing and storage and provide access to Fairchild’s full range of

up-to-date technical and product information. Fairchild and our Authorized Distributors will stand behind all warranties and will appropriately address and

warranty issues that may arise. Fairchild will not provide any warranty coverage or other assistance for parts bought from Unauthorized Sources. Fairchild is

committed to combat this global problem and encourage our customers to do their part in stopping this practice by buying direct or from authorized distributors.

Rev. I66

www.onsemi.com

ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.

ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent

coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.

ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability

arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.

Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,

regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or

specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer

application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not

designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification

in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized

application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and

expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such

claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This

literature is subject to all applicable copyright laws and is not for resale in any manner.

PUBLICATION ORDERING INFORMATION

N. American Technical Support: 800−282−9855 Toll Free

USA/Canada

Europe, Middle East and Africa Technical Support:

Phone: 421 33 790 2910

Japan Customer Focus Center

Phone: 81−3−5817−1050

www.onsemi.com

LITERATURE FULFILLMENT:

Literature Distribution Center for ON Semiconductor

19521 E. 32nd Pkwy, Aurora, Colorado 80011 USA

Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada

Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada

Email: orderlit@onsemi.com

ON Semiconductor Website: www.onsemi.com

Order Literature: http://www.onsemi.com/orderlit

For additional information, please contact your local

Sales Representative