CMFD2004i SURFACE MOUNT DUAL ISOLATED HIGH VOLTAGE SILICON SWITCHING DIODES w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CMFD2004i consists of two electrically Isolated high voltage switching diodes packaged in an epoxy molded SOT-143 surface mount case. This device is designed for switching applications requiring dual high voltage diodes. MARKING CODE: CJP SOT-143 CASE MAXIMUM RATINGS: (TA=25C) Continuous Reverse Voltage SYMBOL VR 240 Peak Repetitive Reverse Voltage VRRM IO 300 V 200 mA IF IFRM IFSM 225 mA 450 mA 4.0 A IFSM PD 1.0 A 350 mW -65 to +150 C 357 C/W Peak Repetitive Reverse Current Continuous Forward Current Peak Repetitive Forward Current Peak Forward Surge Current, tp=1.0s Peak Forward Surge Current, tp=1.0s Power Dissipation Operating and Storage Junction Temperature Thermal Resistance TJ, Tstg JA UNITS ELECTRICAL CHARACTERISTICS PER DIODE: (TA=25C unless otherwise noted) SYMBOL TEST CONDITIONS MIN MAX V UNITS IR VR=240V 100 nA IR VR=240V, TA=150C IR=100A 100 A BVR VF 300 V 1.0 V CT IF=100mA VR=0, f=1.0MHz 5.0 pF trr IF=IR=30mA, Irr=3.0mA, RL=100 50 ns R5 (13-August 2010) CMFD2004i SURFACE MOUNT DUAL ISOLATED HIGH VOLTAGE SILICON SWITCHING DIODES SOT-143 CASE - MECHANICAL OUTLINE PIN CONIGURATION LEAD CODE: 1) Cathode D1 2) Cathode D2 3) Anode D2 4) Anode D1 MARKING CODE: CJP R5 (13-August 2010) w w w. c e n t r a l s e m i . c o m