Data Sheet 1 05.99
Type Ordering
Code Tape and Reel Information Pin Configuration Marking Package
1234
BSP 129 Q67000-S073 E6327: 1000 pcs/reel G D S D BSP 129 SOT-223
BSP 129 Q67000-S314 E7941: 1000 pcs/reel
VGS(th) selected in groups:
(see page 3)
Maximum Ratings
Parameter Symbol Values Unit
Drain-source voltage VDS 240 V
Drain-gate voltage, RGS = 20 kΩ VDGR 240
Gate-source voltage VGS ± 20
ESD Sensitivity (HBM) as per MIL-STD 883 – Class 1
Continuous drain current, TA = 34 ˚C ID0.2 A
Pulsed drain current, TA= 25 ˚C ID puls 0.6
Max. power dissipation, TA = 25 ˚C Ptot 1.7 W
Operating and storage temperature range Tj,Tstg – 55 … + 150 ˚C
Thermal resistance 1) chip-ambient
chip-soldering point RthJA
RthJS
72
12 K/W
DIN humidity category, DIN 40 040 – E –
IEC climatic category, DIN IEC 68-1 – 55/150/56
1) Transistor on epoxy pcb 40 mm × 40 mm × 1.5 mm with 6 cm2 copper area for drain connection.
SIPMOS Small-Signal Transistor
●VDS 240 V
●ID0.2 A
●RDS(on) 20 Ω
●N channel
●Depletion mode
●High dynamic resistance
●Available grouped in VGS(th)
BSP 129
BSP 129
Data Sheet 2 05.99
Package Outline
Electrical Characteristics
at Tj = 25 ˚C, unless otherwise specified.
Parameter Symbol Values Unit
min. typ. max.
Static Characteristics
Drain-source breakdown voltage
VGS = − 3 V, ID = 0.25 mA V(BR)DSS 240 – – V
Gate threshold voltage
VDS = 3 V, ID = 1 mA VGS(th) − 1.8 − 1.2 − 0.7
Drain-source cutoff current
VDS = 240 V, VGS = − 3 V
Tj= 25 ˚C
Tj= 125 ˚C
IDSS
–
––
–100
200 nA
µA
Gate-source leakage current
VGS = 20 V, VDS = 0 IGSS – 10 100 nA
Drain-source on-resistance
VGS = 0 V, ID = 0.014 A RDS(on) – 7.0 20 Ω
Dynamic Characteristics
Forward transconductance
VDS ≥ 2 ×ID×RDS(on)max,ID = 0.25 A gfs 0.14 0.2 – S
Input capacitance
VGS = 0, VDS = 25 V, f = 1 MHz Ciiss – 110 150 pF
Output capacitance
VGS = 0, VDS = 25 V, f = 1 MHz Coss –2030
Reverse transfer capacitance
VGS = 0, VDS = 25 V, f = 1 MHz Crss –710
Turn-on time ton, (ton = td(on) + tr)td(on) –46ns
VDD =30V,VGS = − 2 V ... + 5 V, RGS =50Ω,
ID =0.25 A tr–1015
Turn-off time toff, (toff =td(off) + tf)td(off) –1520
VDD =30V,VGS = − 2 V ... + 5 V, RGS =50Ω,
ID =0.25 A tf–2535
BSP 129
Data Sheet 3 05.99
Electrical Characteristics (cont’d)
at Tj = 25 ˚C, unless otherwise specified.
Parameter Symbol Values Unit
min. typ. max.
Reverse Diode
Continuous reverse drain current
TA = 25 ˚C IS– – 0.15 A
Pulsed reverse drain current
TA = 25 ˚C ISM – – 0.45
Diode forward on-voltage
IF = 0.3 A, VGS = 0 VSD – 0.7 1.4 V
VGS(th) Grouping Symbol Limit Values Unit Test Condition
min. max.
Range of VGS(th) ∆VGS(th) – 0.2 V –
Threshold voltage selected in groups 1):
F
G
A
B
C
D
VGS(th) – 1.600
– 1.700
– 1.800
– 1.900
– 2.000
– 2.100
– 1.400
– 1.500
– 1.600
– 1.700
– 1.800
– 1.900
V
V
V
V
V
V
VDS1 = 0.2 V;
VDS2 = 3 V;
ID = 10 µA
1) A specific group cannot be ordered separately.
Each reel only contains transistors from one group.
BSP 129
Data Sheet 4 05.99
Characteristics
at Tj = 25 ˚C, unless otherwise specified
Total power dissipation Ptot = f (TA)
Typ. output characteristics ID = f (VDS)
parameter: tp = 80 µs
Safe operating area ID = f(VDS)
parameter: D = 0.01, TC = 25 ˚C
Typ. drain-source on-resistance
RDS(on) = f (ID)
parameter: VGS
BSP 129
Data Sheet 5 05.99
Typ. transfer characteristics ID = f(VGS)
parameter: tp= 80 µs, VDS ≥ 2 ×ID×RDS(on)max.
Drain-source on-resistance
RDS(on) = f(T
j)
parameter: ID = 0.014 A, VGS = 0 V, (spread)
Typ. forward transconductance gfs =f (ID)
parameter: VDS ≥ 2 ×ID×RDS(on)max.,tp = 80 µs
Typ. capacitances C = f (VDS)
parameter: VGS = 0, f = 1 MHz
BSP 129
Data Sheet 6 05.99
Gate threshold voltage VGS(th) = f (Tj)
parameter: VDS = 3 V, ID = 1 mA, (spread)
Drain current ID = f (TA)
parameter: VGS ≥ 3 V
Forward characteristics of reverse diode
IF = f(VSD)
parameter: tp= 80 µs, Tj,(spread)
Safe operating area ID = f(VDS)
parameter: D = 0, TC = 25 ˚C
BSP 129
Data Sheet 7 05.99
Drain-source breakdown voltage
V(BR) DSS = b× V(BR)DSS (25 ˚C)
