TGA4902-SM Ka Band Packaged MPA Key Features * * * * * Typical Frequency Range: 25 - 35 GHz 25 dBm Nominal P1dB 18 dB Nominal Gain Bias 6 V, 220 mA Package Dimensions: 4.0 x 4.0 x 0.9 mm Primary Applications * * * Ka-Band VSAT Point-to-Point Radio Point-to-Multipoint Communications Product Description Preliminary Measured Data The TGA4902-SM typically provides 25 dBm of output power at 1 dB gain compression, with small signal gain of 18 dB. The TGA4902-SM is ideally suited for VSAT ground terminal market, Point-toPoint Radio, Point-to-Multipoint Communications. Evaluation Boards are available. Lead-free and RoHS compliant. 25 20 15 10 5 0 -5 -10 -15 -20 -25 Gain ORL IRL 25 26 27 28 29 30 31 32 33 34 35 33 34 35 Frequency (GHz) 27 25 P1dB (dBm) The TriQuint TGA4902-SM is a KaBand packaged medium Power Amplifier. The TGA4902-SM operates from 25-35 GHz and is designed using TriQuint's power pHEMT production process. S-Parameter (dB) Bias Conditions: Vd = 6 V, Id = 220 mA, Tuned 23 21 19 17 15 25 26 27 28 29 30 31 32 Frequency (GHz) Datasheet subject to change without notice TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com April 2012 (c) Rev C 1 TGA4902-SM TABLE I MAXIMUM RATINGS 1/ SYMBOL PARAMETER VALUE NOTES 8V 2/ Vd Drain Voltage Vg Gate Voltage Range Id Drain Current 296 mA 2/ 3/ Ig Gate Current 8.8 mA 3/ PIN Input Continuous Wave Power 20 dBm PD Power Dissipation 1.89 W 2/ 4/ TCH Operating Channel Temperature 200 C 5/ 6/ Mounting Temperature (30 Seconds) 260 C TSTG -5 TO 0 V Storage Temperature -65 to 150 C 1/ These ratings represent the maximum operable values for this device. 2/ Combinations of supply voltage, supply current, input power, and output power shall not exceed PD. 3/ Total current for the entire MMIC. 4/ When operated at this bias condition with a base plate temperature of 85 C, the median life is 2.3E4 hours 5/ Junction operating temperature will directly affect the device median time to failure (Tm). For maximum life, it is recommended that junction temperatures be maintained at the lowest possible levels. 6/ These ratings apply to each individual FET. TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com April 2012 (c) Rev C 2 TGA4902-SM TABLE II ELECTRICAL CHARACTERISTICS (Ta = 25 0C, Nominal) PARAMETER TYPICAL UNITS 25 - 35 GHz 6 V Quiescent Current 220 mA Small Signal Gain 18 dB Input Return Loss 15 dB Output Return Loss 10 dB Output Power @ 1 dB Compression Gain 25 dBm -0.017 dB/ C Frequency Range Drain Operating Temperature Coefficient 0 TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com April 2012 (c) Rev C 3 TGA4902-SM TABLE III THERMAL INFORMATION PARAMETER JC Thermal Resistance (channel case) TEST CONDITIONS TCH (C) (C/W) Tm (HRS) 150 60.7 1.0E+6 Vd = 6 V ID = 220 mA Pdiss = 1.32 W JC Note: Worst case condition with no RF applied, 100% of DC power is dissipated, Case Temperature @ 70 C Median Lifetime (Tm) vs. Channel Temperature TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com April 2012 (c) Rev C 4 TGA4902-SM Preliminary Measured Data Gain (dB) Bias Conditions: Vd = 6 V, Id =220 mA, Tuned 26 24 22 20 18 16 14 12 10 8 6 4 2 0 20 22 24 26 28 30 32 34 36 38 40 32 33 34 35 Frequency (GHz) 27 26 25 P1dB (dBm) 24 23 22 21 20 19 18 17 16 15 25 26 27 28 29 30 31 Frequency (GHz) TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com April 2012 (c) Rev C 5 TGA4902-SM Preliminary Measured Data Bias Conditions: Vd = 6 V, Id =220 mA 0 Input Return Loss (dB) -2 -4 -6 -8 -10 -12 -14 -16 Tuned * -18 -20 20 22 24 26 28 30 32 34 36 38 40 Frequency (GHz) 0 Output Return Loss (dB) -2 -4 -6 -8 -10 -12 -14 -16 Tuned * -18 -20 20 22 24 26 28 30 32 34 36 38 40 Frequency (GHz) * As build performance without tuning stubs TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com April 2012 (c) Rev C 6 TGA4902-SM Package Pinout Diagram TGA 4902 Date Code Lot Code Top View Bottom View Dot indicates Pin 1 Pin Description 1, 5, 6, 10, 11, 15, 16, 20, 21 GND 2, 4, 7, 12, 14, 19 NC 3 RF Input 8 Vg1 9 Vg2 13 RF Output 17 Vd1 18 Vd2 TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com April 2012 (c) Rev C 7 Mechanical Drawing TGA4902-SM Units: Millimeters GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should be observed during handling, assembly and test. TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com April 2012 (c) Rev C 8 TGA4902-SM Recommended Board Layout Assembly 1 uF 10 Ohm Vd = 5-6V 100pF Tuning Tuning 100pF Vg ~ -0.6V to get 220mA Id 10 Ohm 1 uF TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com April 2012 (c) Rev C 9 TGA4902-SM Recommended Surface Mount Package Assembly Proper ESD precautions must be followed while handling packages. TriQuint recommends using a conductive solder paste for attachment. Follow solder paste and reflow oven vendors' recommendations when developing a solder reflow profile. Typical solder reflow profiles are listed in the table below. Hand soldering is not recommended. Solder paste can be applied using a stencil printer or dot placement. The volume of solder paste depends on PCB and component layout and should be well controlled to ensure consistent mechanical and electrical performance. Solder attach process requires the use of no clean flux. This part is not rated for high moisture environments. Typical Solder Reflow Profiles Reflow Profile SnPb Pb Free Ramp-up Rate 3 C/sec 3 C/sec Activation Time and Temperature 60 - 120 sec @ 140 - 160 C 60 - 180 sec @ 150 - 200 C Time above Melting Point 60 - 150 sec 60 - 150 sec Max Peak Temperature 240 C 260 C Time within 5 C of Peak Temperature 10 - 20 sec 10 - 20 sec Ramp-down Rate 4 - 6 C/sec 4 - 6 C/sec Ordering Information Part Package Style TGA4902-SM QFN 4x4 Surface Mount TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com April 2012 (c) Rev C 10