TIP120 ... TIP122 TIP120 ... TIP122 Si-Epitaxial Planar Darlington Power Transistors Si-Epitaxial Planar Darlington-Leistungs-Transistoren NPN NPN Version 2006-10-17 Max. power dissipation with cooling Max. Verlustleistung mit Kuhlung 4 3 3.8 Type Typ 3.4 15.7 100.2 13.2 1 2 3 1.5 0.9 2.54 Dimensions - Mae [mm] 1=B 2/4 = C 3=E 65 W Collector current Kollektorstrom 5A Plastic case Kunststoffgehause TO-220AB Weight approx. Gewicht ca. 2.2 g Plastic material has UL classification 94V-0 Gehausematerial UL94V-0 klassifiziert Standard packaging in tubes Standard Lieferform in Stangen Maximum ratings (TA = 25C) Grenzwerte (TA = 25C) TIP120 TIP121 TIP122 Collector-Emitter-volt. - Kollektor-Emitter-Spg. B open VCEO 60 V 80 V 100 V Collector-Base-voltage - Kollektor-Basis-Spg. E open VCBO 60 V 80 V 100 V Emitter-Base-voltage - Emitter-Basis-Spannung C open VEBO 5V TA = 25C TC = 25C Ptot Ptot 2 W 1) 65 W Collector current - Kollektorstrom (dc) IC 5A Peak Collector current - Kollektor-Spitzenstrom ICM 8A Base current - Basisstrom (dc) IB 120 mA Junction temperature - Sperrschichttemperatur Storage temperature - Lagerungstemperatur Tj TS -55...+150C -55...+150C Power dissipation - Verlustleistung without cooling - ohne Kuhlung with cooling - mit Kuhlung Characteristics (Tj = 25C) Kennwerte (Tj = 25C) Min. Typ. Max. hFE hFE 1000 1000 - - - - hfe 4 DC current gain - Kollektor-Basis-Stromverhaltnis ) 2 IC = 0.5 A, VCE = 3 V IC = 3 A, VCE = 3 V Small signal current gain - Kleinsignal-Stromverstarkung IC = 3 A, VCE = 4 V, f = 1 MHz 1 2 Valid, if leads are kept at ambient temperature at a distance of 5 mm from case Gultig wenn die Anschlussdrahte in 5 mm Abstand vom Gehause auf Umgebungstemperatur gehalten werden Tested with pulses tp = 300 s, duty cycle 2% - Gemessen mit Impulsen tp = 300 s, Schaltverhaltnis 2% (c) Diotec Semiconductor AG http://www.diotec.com/ 1 TIP120 ... TIP122 Characteristics (Tj = 25C) Kennwerte (Tj = 25C) Min. Typ. Max. VCEsat VCEsat - - - - 2V 4V VBE - - 2.5 V ICEO ICEO ICEO - - - - - - 500 nA 500 nA 500 nA ICBO ICBO ICBO - - - - - - 200 nA 200 nA 200 nA CCB0 - - 200 pF Collector-Emitter saturation volt. - Kollektor-Emitter-Sattigungsspg. 2) IC = 3 A, IB = 12 mA IC = 5 A, IB = 20 mA Base-Emitter voltage - Basis-Emitter-Spannung 2) IC = 3 A, VCE = 3 V Collector-Emitter cutoff current - Kollektor-Emitter-Reststrom VCE = 30 V, (B open) VCE = 40 V, (B open) VCE = 50 V, (B open) TIP120 TIP121 TIP122 Collector-Base cutoff current - Kollektor-Basis-Reststrom VCB = 60 V, (E open) VCB = 80 V, (E open) VCB = 100 V, (E open) TIP120 TIP121 TIP122 Collector-Base Capacitance - Kollektor-Basis-Kapazitat VCB = 10 V, IE = ie = 0, f = 100 kHz Thermal resistance junction to ambient air Warmewiderstand Sperrschicht - umgebende Luft RthA < 63 K/W 1) Thermal resistance junction to case Warmewiderstand Sperrschicht - Gehause RthC < 3 K/W Admissible torque for mounting Zulassiges Anzugsdrehmoment M4 9 10% lb.in. 1 10% Nm Recommended complementary PNP transistors Empfohlene komplementare PNP-Transistoren TIP125 ... TIP127 C2 Equivalent Circuit - Ersatzschaltbild T 1 T E B 2 C B1 T1 T2 E2 2 1 2 Tested with pulses tp = 300 s, duty cycle 2% - Gemessen mit Impulsen tp = 300 s, Schaltverhaltnis 2% Valid, if leads are kept at ambient temperature at a distance of 2 mm from case Gultig wenn die Anschlussdrahte in 2 mm Abstand vom Gehause auf Umgebungstemperatur gehalten werden http://www.diotec.com/ (c) Diotec Semiconductor AG