Order this document by MJD41C/D SEMICONDUCTOR TECHNICAL DATA DPAK For Surface Mount Applications *Motorola Preferred Device Designed for general purpose amplifier and low speed switching applications. * * * * * Lead Formed for Surface Mount Applications in Plastic Sleeves (No Suffix) Straight Lead Version in Plastic Sleeves ("-1" Suffix) Lead Formed Version in 16 mm Tape and Reel ("T4" Suffix) Electrically Similar to Popular TIP41 and TIP42 Series Monolithic Construction With Built-in Base-Emitter Resistors IIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIII IIIII IIIIII III IIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIII IIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIII IIIII IIIIII III IIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIII IIIII IIIIII III IIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIII IIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIII SILICON POWER TRANSISTORS 6 AMPERES 100 VOLTS 20 WATTS MAXIMUM RATINGS Unit VCEO 100 Vdc Collector-Base Voltage VCB 100 Vdc Emitter-Base Voltage VEB 5 Vdc Collector Current -- Continuous Peak IC 6 10 Adc Base Current IB 2 Adc Total Power Dissipation @ TC = 25_C Derate above 25_C PD 20 0.16 Watts W/_C Total Power Dissipation* @ TA = 25_C Derate above 25_C PD 1.75 0.014 Watts W/_C TJ, Tstg - 65 to + 150 _C Symbol Max Unit Thermal Resistance, Junction to Case RJC 6.25 _C/W Thermal Resistance, Junction to Ambient* RJA 71.4 _C/W Collector-Emitter Voltage Operating and Storage Junction Temperature Range THERMAL CHARACTERISTICS Characteristic CASE 369A-13 CASE 369-07 MINIMUM PAD SIZES RECOMMENDED FOR SURFACE MOUNTED APPLICATIONS 0.165 4.191 MJD41C MJD42C 0.190 4.826 Symbol Rating 0.243 6.172 0.063 1.6 0.118 3.0 0.07 1.8 * These ratings are applicable when surface mounted on the minimum pad size recommended. inches mm Preferred devices are Motorola recommended choices for future use and best overall value. REV 1 Motorola, Inc. 1995 Motorola Bipolar Power Transistor Device Data 1 IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIII IIIIII IIIII IIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIII IIIIII IIIII IIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIII IIIIII IIIII IIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIII IIIIII IIIII IIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIII IIIIII IIIII IIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIII IIIIII IIIII IIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIII v v ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted) Characteristic Symbol Min Max Unit VCEO(sus) 100 -- Vdc Collector Cutoff Current (VCE = 60 Vdc, IB = 0) ICEO -- 50 Adc Collector Cutoff Current (VCE = 100 Vdc, VEB = 0) ICES -- 10 Adc Emitter Cutoff Current (VBE = 5 Vdc, IC = 0) IEBO -- 0.5 mAdc 30 15 -- 75 OFF CHARACTERISTICS Collector-Emitter Sustaining Voltage (1) (IC = 30 mAdc, IB = 0) ON CHARACTERISTICS (1) hFE DC Current Gain (IC = 0.3 Adc, VCE = 4 Vdc) (IC = 3 Adc, VCE = 4 Vdc) -- Collector-Emitter Saturation Voltage (IC = 6 Adc, IB = 600 mAdc) VCE(sat) -- 1.5 Vdc Base-Emitter On Voltage (IC = 6 Adc, VCE = 4 Vdc) VBE(on) -- 2 Vdc Current Gain -- Bandwidth Product (2) (IC = 500 mAdc, VCE = 10 Vdc, ftest = 1 MHz) fT 3 -- MHz Small-Signal Current Gain (IC = 0.5 Adc, VCE = 10 Vdc, f = 1 kHz) hfe 20 -- -- DYNAMIC CHARACTERISTICS (1) Pulse Test: Pulse Width (2) fT = hfe* ftest. 2 300 s, Duty Cycle 2%. Motorola Bipolar Power Transistor Device Data TYPICAL CHARACTERISTICS PD, POWER DISSIPATION (WATTS) TA TC 2.5 25 2 VCC + 30 V +11 V 1.5 TC TA SURFACE MOUNT 10 0.5 5 0 0 25 50 tr, tf 10 ns DUTY CYCLE = 1% 75 100 125 150 Figure 2. Switching Time Test Circuit 2 500 300 200 VCE = 2 V TJ = 150C 100 70 50 0.7 0.5 25C 30 20 TJ = 25C VCC = 30 V IC/IB = 10 1 t, TIME ( s) hFE , DC CURRENT GAIN -4 V RB and RC VARIED TO OBTAIN DESIRED CURRENT LEVELS D1 MUST BE FAST RECOVERY TYPE, e.g.: MSB5300 USED ABOVE IB 100 mA MSD6100 USED BELOW IB 100 mA REVERSE ALL POLARITIES FOR PNP. Figure 1. Power Derating 10 7 5 0.06 0.3 0.2 tr 0.1 0.07 - 55C td @ VBE(off) 5 V 0.05 0.2 0.1 0.3 0.4 0.6 1 2 4 0.03 0.02 0.06 0.1 6 0.2 0.4 1 2 IC, COLLECTOR CURRENT (AMP) Figure 3. DC Current Gain Figure 4. Turn-On Time 4 6 5 TJ = 25C TJ = 25C VCC = 30 V IC/IB = 10 IB1 = IB2 3 2 1.6 t, TIME ( s) ts 1.2 VCE(sat) @ IC/IB = 10 VBE @ VCE = 4 V VBE(sat) @ IC/IB = 10 0.1 0.2 0.3 0.4 1 0.7 0.5 0.3 0.2 tf 0.4 0 0.06 0.6 IC, COLLECTOR CURRENT (AMP) 2 0.8 D1 51 -9 V 1 SCOPE RB 0 15 T, TEMPERATURE (C) V, VOLTAGE (VOLTS) RC 25 s 20 0.6 1 2 3 IC, COLLECTOR CURRENT (AMP) 0.2 0.4 0.6 1 2 IC, COLLECTOR CURRENT (AMP) Figure 5. "On" Voltages Figure 6. Turn-Off Time Motorola Bipolar Power Transistor Device Data 4 6 0.1 0.07 0.05 0.06 0.1 4 6 3 VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS) 300 2 TJ = 25C TJ = 25C 200 IC = 1 A 2.5 A C, CAPACITANCE (pF) 1.6 5A 1.2 0.8 Cib 100 70 Cob 50 0.4 0 10 20 30 50 100 200 300 IB, BASE CURRENT (mA) 500 30 0.5 1000 1 3 10 2 5 20 VR, REVERSE VOLTAGE (VOLTS) r(t), EFFECTIVE TRANSIENT THERMAL RESISTANCE (NORMALIZED) D = 0.5 0.3 0.2 0.2 0.05 0.02 0.03 P(pk) RJC(t) = r(t) RJC RJC = 6.25C/W MAX D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 TJ(pk) - TC = P(pk) JC(t) 0.1 0.1 0.07 0.05 50 Figure 8. Capacitance Figure 7. Collector Saturation Region 1 0.7 0.5 30 0.01 t1 t2 DUTY CYCLE, D = t1/t2 SINGLE PULSE 0.02 0.01 0.01 0.02 0.03 0.05 0.1 0.2 0.3 0.5 1 2 3 5 t, TIME (ms) 10 20 30 50 100 200 300 500 1000 Figure 9. Thermal Response IC, COLLECTOR CURRENT (AMP) 10 500 s 5 3 2 1 ms dc 5 ms 1 0.5 0.3 WIRE BOND LIMIT THERMAL LIMIT SECOND BREAKDOWN LIMIT CURVES APPLY BELOW RATED VCEO 0.1 0.05 0.03 0.01 100 s TC = 25C SINGLE PULSE TJ = 150C 1 MJD41C, 42C There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC - VCE limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate. The data of Figure 10 is based on T J(pk) = 150_C; T C is variable depending on conditions. Second breakdown pulse limits are valid for duty cycles to 10% provided T J(pk) 150_C. T J(pk) may be calculated from the data in Figure 9. At high case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown. v 2 3 5 7 10 20 30 50 70 100 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) Figure 10. Maximum Forward Bias Safe Operating Area 4 Motorola Bipolar Power Transistor Device Data PACKAGE DIMENSIONS C B V NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. SEATING PLANE -T- E R 4 Z A S 1 2 DIM A B C D E F G H J K L R S U V Z 3 U K F J L H D G 2 PL 0.13 (0.005) M T INCHES MIN MAX 0.235 0.250 0.250 0.265 0.086 0.094 0.027 0.035 0.033 0.040 0.037 0.047 0.180 BSC 0.034 0.040 0.018 0.023 0.102 0.114 0.090 BSC 0.175 0.215 0.020 0.050 0.020 --- 0.030 0.050 0.138 --- STYLE 1: PIN 1. 2. 3. 4. MILLIMETERS MIN MAX 5.97 6.35 6.35 6.73 2.19 2.38 0.69 0.88 0.84 1.01 0.94 1.19 4.58 BSC 0.87 1.01 0.46 0.58 2.60 2.89 2.29 BSC 4.45 5.46 0.51 1.27 0.51 --- 0.77 1.27 3.51 --- BASE COLLECTOR EMITTER COLLECTOR CASE 369A-13 ISSUE W C B V E R 4 A 1 2 3 S -T- K SEATING PLANE J F H D G 3 PL 0.13 (0.005) M NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. DIM A B C D E F G H J K R S V INCHES MIN MAX 0.235 0.250 0.250 0.265 0.086 0.094 0.027 0.035 0.033 0.040 0.037 0.047 0.090 BSC 0.034 0.040 0.018 0.023 0.350 0.380 0.175 0.215 0.050 0.090 0.030 0.050 STYLE 1: PIN 1. 2. 3. 4. T MILLIMETERS MIN MAX 5.97 6.35 6.35 6.73 2.19 2.38 0.69 0.88 0.84 1.01 0.94 1.19 2.29 BSC 0.87 1.01 0.46 0.58 8.89 9.65 4.45 5.46 1.27 2.28 0.77 1.27 BASE COLLECTOR EMITTER COLLECTOR CASE 369-07 ISSUE K Motorola Bipolar Power Transistor Device Data 5 Motorola reserves the right to make changes without further notice to any products herein. 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