MJD41CRL - ON Semiconductor

Motorola Bipolar Power Transistor Device Data

 



DPAK For Surface Mount Applications

Designed for general purpose amplifier and low speed switching applications.

•Lead Formed for Surface Mount Applications in Plastic Sleeves (No Suffix)

•Straight Lead Version in Plastic Sleeves (“–1” Suffix)

•Lead Formed Version in 16 mm Tape and Reel (“T4” Suffix)

•Electrically Similar to Popular TIP41 and TIP42 Series

•Monolithic Construction With Built–in Base–Emitter Resistors

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

MAXIMUM RATINGS

ÎÎÎÎÎÎÎÎÎÎÎÎÎ

Rating

ÎÎÎÎÎ

Symbol

ÎÎÎÎÎÎ

MJD41C

MJD42C

ÎÎÎ

Unit

ÎÎÎÎÎÎÎÎÎÎÎÎÎ

Collector–Emitter Voltage

ÎÎÎÎÎ

VCEO

ÎÎÎÎÎÎ

100

ÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎ

Collector–Base Voltage

ÎÎÎÎÎ

VCB

ÎÎÎÎÎÎ

100

ÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎ

Emitter–Base Voltage

ÎÎÎÎÎ

VEB

ÎÎÎÎÎÎ

ÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎ

Collector Current— Continuous

Peak

ÎÎÎÎÎ

ÎÎÎÎÎÎ

ÎÎÎ

Adc

ÎÎÎÎÎÎÎÎÎÎÎÎÎ

Base Current

ÎÎÎÎÎ

ÎÎÎÎÎÎ

ÎÎÎ

Adc

ÎÎÎÎÎÎÎÎÎÎÎÎÎ

Total Power Dissipation @ TC = 25

Derate above 25

ÎÎÎÎÎ

ÎÎÎÎÎÎ

0.16

ÎÎÎ

Watts

ÎÎÎÎÎÎÎÎÎÎÎÎÎ

Total Power Dissipation* @ TA = 25

Derate above 25

ÎÎÎÎÎ

ÎÎÎÎÎÎ

1.75

0.014

ÎÎÎ

Watts

ÎÎÎÎÎÎÎÎÎÎÎÎÎ

Operating and Storage Junction

Temperature Range

ÎÎÎÎÎ

TJ, Tstg

ÎÎÎÎÎÎ

–65 to +150

ÎÎÎ

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

THERMAL CHARACTERISTICS

ÎÎÎÎÎÎÎÎÎÎÎÎÎ

Characteristic

ÎÎÎÎÎ

Symbol

ÎÎÎÎÎÎ

Max

ÎÎÎ

Unit

ÎÎÎÎÎÎÎÎÎÎÎÎÎ

Thermal Resistance, Junction to Case

ÎÎÎÎÎ

RθJC

ÎÎÎÎÎÎ

6.25

ÎÎÎ

C/W

ÎÎÎÎÎÎÎÎÎÎÎÎÎ

Thermal Resistance, Junction to Ambient*

ÎÎÎÎÎ

RθJA

ÎÎÎÎÎÎ

71.4

ÎÎÎ

C/W

*These ratings are applicable when surface mounted on the minimum pad size recommended.

Preferred devices are Motorola recommended choices for future use and best overall value.



SEMICONDUCTOR TECHNICAL DATA Order this document

by MJD41C/D

 Motorola, Inc. 1995





CASE 369A–13

SILICON

POWER TRANSISTORS

6 AMPERES

100 VOLTS

20 WATTS

*Motorola Preferred Device

CASE 369–07

MINIMUM PAD SIZES

RECOMMENDED FOR

SURFACE MOUNTED

APPLICATIONS

0.243

6.172

0.063

1.6

0.118

3.0

0.07

1.8 0.165

4.191

0.190

4.826

inches





 

REV 1

 

2 Motorola Bipolar Power Transistor Device Data

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

ELECTRICAL CHARACTERISTICS (TC = 25

C unless otherwise noted)

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Characteristic

ÎÎÎÎÎÎ

Symbol

ÎÎÎÎÎ

Min

ÎÎÎÎÎ

Max

ÎÎÎÎ

Unit

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

OFF CHARACTERISTICS

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Collector–Emitter Sustaining Voltage (1)

(IC = 30 mAdc, IB = 0)

ÎÎÎÎÎÎ

VCEO(sus)

ÎÎÎÎÎ

100

ÎÎÎÎÎ

—

ÎÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Collector Cutoff Current

(VCE = 60 Vdc, IB = 0)

ÎÎÎÎÎÎ

ICEO

ÎÎÎÎÎ

—

ÎÎÎÎÎ

ÎÎÎÎ

µAdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Collector Cutoff Current

(VCE = 100 Vdc, VEB = 0)

ÎÎÎÎÎÎ

ICES

ÎÎÎÎÎ

—

ÎÎÎÎÎ

ÎÎÎÎ

µAdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Emitter Cutoff Current

(VBE = 5 Vdc, IC = 0)

ÎÎÎÎÎÎ

IEBO

ÎÎÎÎÎ

—

ÎÎÎÎÎ

0.5

ÎÎÎÎ

mAdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

ON CHARACTERISTICS (1)

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

DC Current Gain

(IC = 0.3 Adc, VCE = 4 Vdc)

(IC = 3 Adc, VCE = 4 Vdc)

ÎÎÎÎÎÎ

hFE

ÎÎÎÎÎ

—

ÎÎÎÎ

—

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Collector–Emitter Saturation Voltage

(IC = 6 Adc, IB = 600 mAdc)

ÎÎÎÎÎÎ

VCE(sat)

ÎÎÎÎÎ

—

ÎÎÎÎÎ

1.5

ÎÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Base–Emitter On Voltage

(IC = 6 Adc, VCE = 4 Vdc)

ÎÎÎÎÎÎ

VBE(on)

ÎÎÎÎÎ

—

ÎÎÎÎÎ

ÎÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

DYNAMIC CHARACTERISTICS

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Current Gain — Bandwidth Product (2)

(IC = 500 mAdc, VCE = 10 Vdc, ftest = 1 MHz)

ÎÎÎÎÎÎ

ÎÎÎÎÎ

—

ÎÎÎÎ

MHz

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Small–Signal Current Gain

(IC = 0.5 Adc, VCE = 10 Vdc, f = 1 kHz)

ÎÎÎÎÎÎ

hfe

ÎÎÎÎÎ

—

ÎÎÎÎ

—

(1) Pulse Test: Pulse Width

300 µs, Duty Cycle

2%.

(2) fT = hfe• ftest.

 

Motorola Bipolar Power Transistor Device Data

0.06

IC, COLLECTOR CURRENT (AMP)

0.2 0.4 4

500

hFE, DC CURRENT GAIN

VCE = 2 V

TJ = 150

0.3 1

–55

0.1 0.6 2 6

Figure 1. Power Derating

T, TEMPERATURE (

050 75 100 125 150

PD, POWER DISSIPATION (WATTS)

Figure 2. Switching Time Test Circuit

IC, COLLECTOR CURRENT (AMP)

0.1

t, TIME ( s)

1ts

0.7

0.5

0.3

0.2 tf

IC, COLLECTOR CURRENT (AMP)

TJ = 25

VCC = 30 V

IC/IB = 10

t, TIME ( s)

0.7

0.5

0.3

0.2 tr

0.1

0.07

0.05

0.03

td @ VBE(off)

≈

5 V

Figure 3. DC Current Gain

IC, COLLECTOR CURRENT (AMP)

1.2

0.8

V, VOLTAGE (VOLTS)

1.6

0.4

0VBE(sat) @ IC/IB = 10

2.5

1.5

0.5

300

200

100

50.020.06 0.2 0.4 41

0.1 0.6 2 6

TJ = 25

VCC = 30 V

IC/IB = 10

IB1 = IB2

0.06 0.2 0.4 40.3 1

0.1 0.6 2 6 0.06 0.2 0.4 41

0.1 0.6 2

Figure 4. Turn–On Time

Figure 5. “On” Voltages Figure 6. Turn–Off Time

TJ = 25

VBE @ VCE = 4 V

VCE(sat) @ IC/IB = 10

+11 V 25

–9 V

–4 V

SCOPE

VCC

+30 V

tr, tf

≤

10 ns

DUTY CYCLE = 1%

RB and RC VARIED TO OBTAIN DESIRED CURRENT LEVELS

D1 MUST BE FAST RECOVERY TYPE, e.g.:

MSB5300 USED ABOVE IB

≈

100 mA

MSD6100 USED BELOW IB

≈

100 mA

REVERSE ALL POLARITIES FOR PNP.

TA SURFACE MOUNT

0.07

0.05

TYPICAL CHARACTERISTICS

 

4 Motorola Bipolar Power Transistor Device Data

C, CAPACITANCE (pF)

VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)

t, TIME (ms)

0.01

0.01 0.05 1 2 5 10 20 50 100 200 5000.1 0.50.2 10000.03 0.3 3 30 3000.02

2.5 A

Figure 7. Collector Saturation Region

IB, BASE CURRENT (mA)

1.2

0.4

010

0.8

TJ = 25

1.6

IC = 1 A

Figure 8. Capacitance

VR, REVERSE VOLTAGE (VOLTS)

Cob

0.5

2 5 20 50

0.2

0.1

0.05

r(t), EFFECTIVE TRANSIENT THERMAL

JC(t) = r(t) R

JC = 6.25

C/W MAX

D CURVES APPLY FOR POWER

PULSE TRAIN SHOWN

READ TIME AT t1

TJ(pk) – TC = P(pk)

JC(t)

P(pk)

t1t2

DUTY CYCLE, D = t1/t2

0.2

SINGLE PULSE

RESISTANCE (NORMALIZED)

Figure 9. Thermal Response

0.5 D = 0.5

5 A

1000500300200100503020

300

100

200

1 3 10 30

0.05

0.3

0.7

0.07

0.03

0.02

0.1

0.02

0.01

TJ = 25

Cib

IC, COLLECTOR CURRENT (AMP)

VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)

0.01 100

0.3

0.1

0.03

WIRE BOND LIMIT

THERMAL LIMIT

SECOND BREAKDOWN LIMIT

Figure 10. Maximum Forward Bias

Safe Operating Area

TC = 25

C SINGLE PULSE

TJ = 150

0.5

51 ms

MJD41C, 42C

5030201075321

0.05

100

CURVES APPLY BELOW RATED VCEO

5 ms

500

There are two limitations on the power handling ability of a

transistor: average junction temperature and second break-

down. Safe operating area curves indicate IC – VCE limits of

the transistor that must be observed for reliable operation;

i.e., the transistor must not be subjected to greater dissipa-

tion than the curves indicate.

The data of Figure 10 is based on T J(pk) = 150

C; TC is

variable depending on conditions. Second breakdown pulse

limits are valid for duty cycles to 10% provided TJ(pk)

150

C. TJ(pk) may be calculated from the data in Fig-

ure 9. At high case temperatures, thermal limitations will re-

duce the power that can be handled to values less than the

limitations imposed by second breakdown.

 

Motorola Bipolar Power Transistor Device Data

PACKAGE DIMENSIONS

CASE 369A–13

ISSUE W

STYLE 1:

PIN 1. BASE

2. COLLECTOR

3. EMITTER

4. COLLECTOR

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI

Y14.5M, 1982.

2. CONTROLLING DIMENSION: INCH.

123

–T–

SEATING

PLANE

GD3 PL

0.13 (0.005) T

DIM MIN MAX MIN MAX

MILLIMETERSINCHES

A0.235 0.250 5.97 6.35

B0.250 0.265 6.35 6.73

C0.086 0.094 2.19 2.38

D0.027 0.035 0.69 0.88

E0.033 0.040 0.84 1.01

F0.037 0.047 0.94 1.19

G0.090 BSC 2.29 BSC

H0.034 0.040 0.87 1.01

J0.018 0.023 0.46 0.58

K0.350 0.380 8.89 9.65

R0.175 0.215 4.45 5.46

S0.050 0.090 1.27 2.28

V0.030 0.050 0.77 1.27

CASE 369–07

ISSUE K

STYLE 1:

PIN 1. BASE

2. COLLECTOR

3. EMITTER

4. COLLECTOR

2 PL

0.13 (0.005) T

–T–

SEATING

PLANE

DIM MIN MAX MIN MAX

MILLIMETERSINCHES

A0.235 0.250 5.97 6.35

B0.250 0.265 6.35 6.73

C0.086 0.094 2.19 2.38

D0.027 0.035 0.69 0.88

E0.033 0.040 0.84 1.01

F0.037 0.047 0.94 1.19

G0.180 BSC 4.58 BSC

H0.034 0.040 0.87 1.01

J0.018 0.023 0.46 0.58

K0.102 0.114 2.60 2.89

L0.090 BSC 2.29 BSC

R0.175 0.215 4.45 5.46

S0.020 0.050 0.51 1.27

U0.020 ––– 0.51 –––

V0.030 0.050 0.77 1.27

Z0.138 ––– 3.51 –––

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI

Y14.5M, 1982.

2. CONTROLLING DIMENSION: INCH.

1 2 3

 

6 Motorola Bipolar Power Transistor Device Data

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MJD41C/D

*MJD41C/D*

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