9204F–AUTO–06/12
Features
Operating range from 5V to 27V
Baud rate up to 20Kbaud
LIN physical layer according to LIN specification 2.0, 2.1 and SAEJ2602-2
Fully compatible with 3.3V and 5V devices
TXD dominant timeout timer
Normal and Sleep Mode
Wake-up capability via LIN bus (90µs dominant)
Very low standby current during Sleep Mode (10µA)
Bus pin is overtemperature and short-circuit protected versus GND and battery
LIN input current < 2µA if VBAT Is disconnected
Overtemperature protection
High EMC level
Interference and damage protection according to ISO/CD 7637
Fulfills the OEM hardware requirements for LIN in automotive applications rev. 1.1
Transceiver 2: additional INH high side switch output and high voltage WAKE input
Description
The Atmel® ATA6670 is a fully integrated Dual-LIN transceiver complying with the LIN
specification 2.0, 2.1, and SAEJ2602-2. There are two completely independent and sepa-
rated LIN transceivers integrated in one package (only the GND pins GND1 and GND2 are
internally connected). Each of them interfaces with the LIN protocol handler and the physi-
cal layer.
The two LIN transceivers are nearly identical, the only difference is an additional WAKE
input and an INH output at transceiver 2.
The device is designed to handle the low-speed data communication in vehicles, for exam-
ple, in convenience electronics. Improved slope control at the LIN driver ensures secure
data communication up to 20Kbaud. Sleep mode guarantees minimal current consumption
for each transceiver even in the case of a floating bus line or a short-circuit on the LIN bus
to GND. The Atmel ATA6670 features advanced EMI and ESD performance.
Atmel ATA6670
Dual LIN Transceiver
DATASHEET
2Atmel ATA6670 [DATASHEET]
9204F–AUTO–06/12
Figure 1. Block Diagram
Receiver
+
-
Wake up bus
timer
Slew rate control
Control unit
Filter
Short circuit
and over-
temperature
protection
TXD
Time-Out
Timer
Sleep mode
Receiver
4
RXD2
1
RXD1
TXD2
GND2WAKE2
EN2
7
Transceiver 2
Transceiver 1
VS
VS
+
-
Wake up bus
timer
Slew rate control
Control unit
Filter
Short circuit
and over-
temperature
protection
TXD
Time-Out
Timer
Wake-up
Timer
Sleep mode
TXD1
3
EN1
2
6 8
5
GND1
12
LIN2
9
LIN1
13
VS2
10
VS1
14
INH2
11
3Atmel ATA6670 [DATASHEET]
9204F–AUTO–06/12
1. Pin Configuration
Figure 1-1. Pinning DFN14
Table 1-1. Pin Description
Pin Symbol Function
1RXD1 Receives data output 1 (open drain)
2EN1 Enables Normal mode 1. When the input is open or low, transceiver 1 is in Sleep mode.
3TXD1 Transmits data input 1
4RXD2 Receives data output 2 (open drain)
5EN2 Enables Normal mode 2. When the input is open or low, transceiver 2 is in Sleep mode.
6WAKE2 High voltage input for local wake-up request. If not needed, connect directly to VS2
7TXD2 Transmits data input 2. Active low output (strong pull-down) after a local wake-up request at
transceiver 2.
8GND2 Ground 2
9LIN2 LIN bus line 2 input/output
10 VS2 Battery supply 2
11 INH2 VS2- related high-side switch output for controlling an external load, such as a voltage divider
12 GND1 Ground 1
13 LIN1 LIN bus line 1 input/output
14 VS1 Battery supply 1
RXD1
EN1
TXD1
RXD2
EN2
WAKE2
TXD2
VS1
LIN1
GND1
INH2
VS2
Atmel
ATA6670
LIN2
GND2
4Atmel ATA6670 [DATASHEET]
9204F–AUTO–06/12
2. Functional Description
The functions described in the following text apply to each LIN transceiver. Therefore, if pin LIN is stated, this applies to each of
the two receivers (LIN1 and LIN2), which work completely independently. The only internal connection is between GND1 and
GND2. The functions only available at transceiver 2 are marked accordingly.
2.1 Physical Layer Compatibility
Since the LIN physical layer is independent of higher LIN layers (e.g., the LIN protocol layer), all nodes with a LIN physical layer
according to revision 2.x can be mixed with LIN physical layer nodes, which are based on older versions (i.e., LIN 1.0, LIN 1.1,
LIN 1.2, LIN 1.3) without any restrictions.
2.2 Supply Pin (VS)
Undervoltage detection is implemented to disable transmission if VS falls to a value below 5V in order to avoid false bus
messages. After switching on VS, the corresponding transceiver switches to Fail-safe mode. The supply current for each
transceiver in Sleep mode is typically 10µA.
2.3 Ground Pin (GND)
The Atmel ATA6670 does not affect the LIN bus in case of GND disconnection. It is able to handle a ground shift up to 11.5% of
VS.
2.4 Bus Pin (LIN)
A low-side driver with internal current limitation and thermal shutdown and an internal pull-up resistor are implemented as
specified for LIN 2.x. The voltage range is from –27V to +40V. This pin exhibits no reverse current from the LIN bus to VS, even
in case of a GND shift or VBatt disconnection. The LIN receiver thresholds are compatible with the LIN protocol specification. The
fall time (from recessive to dominant) and the rise time (from dominant to recessive) are slope-controlled. The output has a self-
adapting short-circuit limitation; in other words, during current limitation, the current decreases in proportion to an increase in
chip temperature.
Note: The internal pull-up resistor is only active in normal and Fail-safe mode.
2.5 Input/Output Pin (TXD)
In Normal mode the TXD pin is the microcontroller interface to control the state of the LIN output. TXD must be at low level in
order to have a low LIN bus. If TXD is high, the LIN output transistor is turned off and the bus is in recessive state. The TXD pin
is compatible with both a 3.3V and 5V supply.
Only for the LIN transceiver 2: The TXD 2 pin is used in Fail-safe mode as an output in order to signal the wake-up source (see
Section 2.14 “Wake- up Source Recognition (Only available at Transceiver 2)” on page 9). The TXD output is current limited to
<8mA.
2.6 TXD Dominant Time-out Function
The TXD input has an internal pull-down resistor. An internal timer prevents the bus line from being driven permanently in
dominant state. If TXD is forced to low longer than tDOM > 70ms, the LIN pin is switched off (recessive mode). To reset this
mode, switch TXD to high (> 10µs) before switching LIN to dominant again.
2.7 Output Pin (RXD)
This pin reports the state of the LIN bus to the microcontroller. LIN high (recessive) is reported by a high level at RXD, LIN low
(dominant) is reported by a low voltage at RXD. The output is an open drain, therefore it is compatible with a 3.3V or 5V power
supply. The AC characteristics are defined with a pull-up resistor of 5kΩ to 5V and a load capacitor of 20pF. The output is short
current protected. In Unpowered mode (VS= 0V) RXD is switched off. For ESD protection a Zener diode is integrated with
VZ=6.1V.
5Atmel ATA6670 [DATASHEET]
9204F–AUTO–06/12
2.8 Enable Input Pin (EN)
This pin controls the operation mode of the LIN transceiver. If EN = 1, the LIN transceiver is in Normal mode, with the
transmission path from TXD to LIN and from LIN to RXD both active. At a falling edge on EN, while TXD is already set to high,
the device is switched to Sleep mode and no transmission is possible. In Sleep mode, the LIN bus pin is connected to VS with a
weak pull-up current source. The device can transmit only after being woken up. During Sleep mode the device is still supplied
from the battery voltage. The supply current is typically 10µA. The pin EN provides a pull-down resistor in order to force the
transceiver into Sleep mode in case the pin is disconnected.
2.9 WAKE-up Input Pin (WAKE2, Only Available at Transceiver 2)
This pin is a high-voltage input used to wake up the transceiver 2 from Sleep mode. It is usually connected to an external
transistor or a switch to generate a local wake-up. A pull-up current source with typically –10µA is implemented as well as a
debounce timer with a typical debounce time of 35µs.
Even if the WAKE2 pin is pulled to GND, it is possible to switch the transceiver 2 into Sleep mode.
If a local wake-up is not needed in the application, pin WAKE2 can be connected directly to pin VS2.
2.10 INH Output Pin (INH2, only available at Transceiver 2)
This pin is used to control an external load or to switch the LIN master pull-up resistor on/off at pin LIN2. The inhibit pin provides
an internal switch towards VS2 which is protected by temperature monitoring. If transceiver 2 is in normal or Fail-safe mode, the
inhibit high-side switch is turned on. When the transceiver 2 is in Sleep mode, the inhibit switch is turned off, thus disabling the
connected external devices.
A wake-up event on LIN2 or at pin WAKE2 puts the transceiver 2 into Fail-safe mode and as a result the INH2 switches to the
VS2 level. After a system power-up (VS2 rises from zero), the pin INH2 switches automatically to the VS2 level.
2.11 Operation Modes
1. Normal mode
This is the normal transmitting and receiving mode. All features are available.
2. Sleep mode
In this mode the transmission path is disabled and the device is in low power mode. Supply current from VBatt is typi-
cally 10µA. A wake-up signal (either from the LIN bus or the WAKE2 input) is detected and switches the
corresponding transceiver to Fail-safe mode. If EN then switches to high, Normal mode is activated. Input debounce
timers at pin WAKE2 (tWAKE), LIN (tBUS) and EN (tsleep,tnom) prevent undesirable wake-up events due to automotive
transients or EMI. The internal termination between pin LIN and pin VS is disabled. Only a weak pull-up current (typi-
cal 10µA) between pin LIN and pin VS is present. Sleep mode can be activated independently of the current level on
pin LIN.
3. Fail-safe mode
At system power-up or after a wake-up event, the transceiver automatically switches to Fail-safe mode. When VS2
exceeds 5V, the transceiver 2 switches the INH2 pin to the VS2 level. LIN communication is switched off. The micro-
controller of the application then confirms Normal mode by setting the EN pin to high.
6Atmel ATA6670 [DATASHEET]
9204F–AUTO–06/12
Figure 2-1. Operating Modes
2.12 Remote Wake-up via Dominant Bus State
A voltage lower than the LIN pre-wake detection VLINL at pin LIN activates the internal LIN receiver and starts the wake-up
detection timer.
A falling edge at pin LIN, followed by a dominant bus level VBUSdom maintained for a certain period of time (> tBUS) and a rising
edge at pin LIN results in a remote wake-up request. The transceiver switches to Fail-safe mode, at transceiver 2 the INH2
output is activated (switches to VS2) and the internal termination resistor is switched on. The remote wake-up request is
indicated by a low level at pin RXD to interrupt the microcontroller (see Figure 2-2).
Figure 2-2. LIN Wake-up Waveform Diagram
Table 2-1. Table of Modes
Operating Mode Transceiver RXD LIN
Fail-safe Off High, except after wake-up Recessive
Normal On LIN-depending TXD-depending
Sleep Off High-ohmic Recessive
a: Power-up (VS > 3V)
b: VS < 5V
c: Bus wake-up event
(only Transceiver 2)
d: Wake-up from wake switch
EN = 1
and not b
c or d
bb
a
EN = 0
EN = 1
Fail-Safe Mode
Power-up
Communication: OFF
RXD: see table of Modes
Transceiver 2: INH2 switch ON if VS2 > 5V
Sleep Mode
Communication: OFF
Transceiver 2: INH2 switch OFF
Normal Mode
Communication: ON
Transceiver 2: INH2 switch ON Local wake-up event
Go to sleep command
LIN Bus
RXD
EN
High or floating
Normal
Mode
EN High
Node in sleep state
Low
Bus wake-up filtering time
(tBUS)
7Atmel ATA6670 [DATASHEET]
9204F–AUTO–06/12
In Sleep mode the device has a very low current consumption even during short-circuits or floating conditions on the bus. A
floating bus can arise if the master pull-up resistor is missing, e.g., it is switched off when the LIN master is in Sleep mode or
even if the power supply of the master node is switched off.
In order to minimize the current consumption IVS during voltage levels at the LIN pin below the LIN pre-wake threshold, the
receiver is activated only for a specific time tmon. If tmon elapses while the voltage at the bus is lower than pre-wake detection low
(VLINL) and higher than the LIN-dominant level, the receiver is switched off again and the circuit reverts to Sleep mode. The
current consumption is then the result of IVSsleep plus ILINwake. If a dominant state is reached on the bus, no wake-up will occur.
Even if the voltage rises above the pre-wake detection high (VLINH), the IC will stay in Sleep mode (see Figure 2-3 on page 7).
This means the LIN bus must be above the pre-wake detection threshold VLINH for a few microseconds before a new LIN wake-
up is possible.
Figure 2-3. Floating LIN Bus During Sleep Mode
IVSsleep IVSsleep
IVSfail + ILINwake
IVSsleep
VBUSdom
VLINL
IVS
tmon
LIN Pre-wake
LIN dominant state
LIN BUS
Mode of
operation
Int. Pull-up
Resistor
RLIN
Wake-up Detection Phase
off (disabled)
Sleep Mode Sleep Mode
8Atmel ATA6670 [DATASHEET]
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If the Atmel® ATA6670 is in Sleep mode and the voltage level at the LIN is in dominant state (VLIN <V
BUSdom) for a period of time
exceeding tmon (during a short circuit at LIN, for example), the IC switches back to Sleep mode. The VS current consumption
then consists of IVSsleep plus ILINWAKE. After a positive edge at pin LIN the IC switches directly to Fail-safe mode (see Figure 2-4).
Figure 2-4. Short-circuit to GND on the LIN Bus During Sleep Mode
2.13 Local WAKE-up via Pin WAKE2 (Only Available at Transceiver 2)
A falling edge at pin WAKE2 followed by a low level maintained for a certain period of time (> tWAKE) results in a local wake-up
request. According to ISO 7637, the wake-up time ensures that no transients create a wake-up. The transceiver 2 then switches
to Fail-safe mode. Pin INH2 is activated (switches to VS2) and the internal slave termination resistor is switched on. The local
wake-up request is indicated by a low level at pin RXD for interrupting the microcontroller and by a strong pull-down at pin TXD
(see Figure 2-5 on page 9).
The voltage threshold for a wake-up signal is 3V below the VS2 voltage with an output current of typically –3µA. Even in the
case of a continuos low at pin WAKE2 it is possible to switch the transceiver 2 into Sleep mode via a low level at pin EN2. The
transceiver 2 will remain in Sleep mode for an unlimited time. To generate a new wake-up at pin WAKE2, a high signal for > 6µs
is required. A negative edge then restarts the wake-up filtering time.
Sleep Mode
IVSsleep
IVSfail
+ ILINwake
IVSsleep
VBUSdom
VLINL
LIN Pre-wake
LIN dominant state
LIN BUS
IVS
Mode of
operation
Int. Pull-up
Resistor
RLIN
off (disabled) on (enabled)
Wake-up Detection PhaseSleep Mode Fail-Safe Mode
tmon
tmon
9Atmel ATA6670 [DATASHEET]
9204F–AUTO–06/12
Figure 2-5. LIN Transceiver 2: Wake-up from Wake-up Switch (WAKE2)
2.14 Wake- up Source Recognition (Only available at Transceiver 2)
Transceiver 2 can distinguish between a local wake-up request at pin WAKE2 and a remote wake-up request via LIN 2. The
wake-up source can be read at pin TXD in Fail-safe mode. If an external pull up resistor (typ. 5kΩ) has been added on pin TXD2
to the power supply of the microcontroller, a high level indicates a remote wake-up request (weak pull down at pin TXD2), a low
level indicates a local wake-up request (strong pull down at pin TXD2).
The wake-up request flag (indicated at pin RXD2) as well as the wake-up source flag (indicated at pin TXD2) are immediately
reset if the microcontroller sets pin EN2 to high (see Figure 2-5 on page 9).
2.15 Fail-safe Features
During a short-circuit at LIN to VBattery, the output limits the output current to IBUS_LIM. Due to the power dissipation, the
chip temperature exceeds Toff, and the LIN output is switched off. The chip cools down and after a hysteresis of Thys it
switches the output on again.
During a short-circuit from LIN to GND the transceiver can be switched into Sleep mode and even in this case the current
consumption is lower than 45µA. If the short-circuit disappears, the transceiver starts with a remote wake-up.
If a transceiver is in Sleep mode and a floating condition occurs on the bus, the transceiver automatically switches back
to Sleep mode, thus decreasing current consumption to less than 45µA in this case.
The reverse current is < 2µA at pin LIN during loss of VBAT
; this is optimal behavior for bus systems where some slave
nodes are supplied from battery or ignition.
Pin EN provides a pull-down resistor to force the transceiver into Sleep mode if EN is disconnected.
Pin RXD is set to floating if VBAT is disconnected.
Pin TXD provides a pull-down resistor to provide a static low if TXD is disconnected.
After switching the LIN transceiver into Normal mode the TXD pin must be pulled to high longer than 10µs in order to
activate the LIN driver. This feature prevents the bus from being driven into dominant state when the LIN transceiver is
switched into Normal mode and TXD is low.
The INH2 output transistor at transceiver 2 is protected by temperature monitoring
Wake2 Pin
INH2
RXD2
TXD2
EN2
State change
Low or floating
Node in sleep state
Microcontroller start-up
delay time
High
Low Low
EN High
Weak
pull-down
Node in
operation
TXD strong pull-down
High or floating
TXD weak pull-down resistor
Wake filtering time
tWAKE
10Atmel ATA6670 [DATASHEET]
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3. Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress rating
only and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of this
specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.
Parameters Symbol Min. Typ. Max. Unit
VS1, VS2
- Continuous supply voltage –0.3 +40 V
WAKE2
- DC and transient voltage (with 2.7kΩ serial resistor)
- Transient voltage according to ISO7637 (coupling
1nF)
–27
–150
+40
+100
V
V
Logic pins (RXD1, RXD2, TXD1, TXD2, EN1, EN2) –0.3 +5.5 V
LIN1, LIN2
- DC voltage
- Transient voltage according to ISO7637 (coupling
1nF)
–27
–150
+40
+100
V
V
INH2
- DC voltage –0.3 VS2 + 0.3 V
ESD according to IBEE LIN EMC
Test specification 1.0 following IEC 61000-4-2
- Pin VS1, VS2, LIN1, LIN2 to GND
- Pin WAKE2 (2.7kΩ serial resistor)
±8
±6
KV
KV
ESD HBM following STM5.1
with 1.5kΩ / 100pF
- Pin VS1, VS2, LIN1, LIN2, WAKE2, INH2 to GND ±6 KV
HBM ESD
ANSI/ESD-STM5.1
JESD22-A114
AEC-Q100 (002)
±3 KV
CDM ESD STM 5.3.1 ±750 V
Machine model ESD AEC-Q100-Rev.F (003) ±200 V
Junction temperature Tj–40 +150 °C
Storage temperature Tstg –55 +150 °C
4. Thermal Characteristics
Parameters Symbol Min. Typ. Max. Unit
Thermal resistance junction to heat slug RthJC 8K/W
Thermal resistance junction to ambient, where heat slug
is soldered to PCB according to Jedec RthJA 45 K/W
Thermal shutdown Toff 150 165 180 °C
Thermal shutdown hysteresis Thys 510 20 °C
11Atmel ATA6670 [DATASHEET]
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5. Electrical Characteristics
5V < VS < 27V, Tj = –40°C to +150°C; the values below are valid for each of the two nearly identical integrated LIN transceivers unless
otherwise specified.
No. Parameters Test Conditions Pin Symbol Min. Typ. Max. Unit Type*
1 VS Pin
1.1 DC voltage range nominal VS VS513.5 27 V A
1.2 Supply current in Sleep mode
Sleep mode
VLIN > VS – 0.5V
VS < 14V
VS IVSsleep 10 20 µA A
Sleep mode,
bus shorted to GND
VLIN = 0V
VS < 14V
VS IVSsleep_sc 23 45 µA A
1.3
Supply current in Normal mode
Bus recessive
VS < 14V VS IVSrec 0.9 1.3 mA A
1.4
Bus dominant
VS < 14V
Total bus load > 500Ω
VS IVSdom 1.2 2mA A
1.5 Supply current in Fail-safe mode Bus recessive
VS < 14V VS IVSfail 0.5 1.1 mA A
1.6 VS undervoltage threshold on VS VSth 44.95 V A
1.7 VS undervoltage threshold off VS VSth 4.05 5 V A
1.8 VS undervoltage threshold
hysteresis VS VSth_hys 50 500 mV A
2RXD Output Pin (Open Drain)
2.1 Low-level output sink current Normal mode
VLIN = 0V, VRXD = 0.4V RXD IRXDL 1.3 2.5 8mA A
2.2 RXD saturation voltage 5-kΩ pull-up resistor to 5V RXD VsatRXD 0.4 V A
2.3 High-level leakage current Normal mode
VLIN = VBAT
, VRXD = 5V RXD IRXDH –3 +3 µA A
2.4 ESD Zener diode IRXD = 100µA RXD VZRXD 5.8 8.6 V A
3TXD Input/Output Pin
3.1 Low-level voltage input TXD VTXDL –0.3 +0.8 V A
3.2 High-level voltage input TXD VTXDH 25.5 V A
3.3 Pull-down resistor VTXD = 5V TXD RTXD 125 250 600 kΩA
3.4 Low-level leakage current VTXD = 0V TXD ITXD_leak –3 +3 µA A
3.5 Low-level output sink current
(only available at transceiver 2)
Transceiver 2: Fail-safe
mode, local wake-up
VTXD2 = 0.4V
VLIN2 = VBAT
TXD2 ITXD2 1.3 2.5 8mA A
4EN Input Pin
4.1 Low-level voltage input EN VENL –0.3 +0.8 V A
4.2 High-level voltage input EN VENH 25.5 V A
4.3 Pull-down resistor VEN = 5V EN REN 125 250 600 kΩA
4.4 Low-level input current VEN = 0V EN IEN –3 +3 µA A
*) Type means: A = 100% tested, B = 100% correlation tested, C = Characterized on samples, D = Design parameter
12Atmel ATA6670 [DATASHEET]
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5INH 2 Output Pin (Only Available at Transceiver 2)
5.1 High-level voltage Normal or Fail-safe mode
IINH2 = –15mA INH2 VINH2H
VS2
0.75 VS2 V A
5.2 Switch-on resistance between
VS2 and INH2 Normal or Fail-safe mode INH2 RINH2 30 50 ΩA
5.3 Leakage current Transceiver 2 in Sleep mode
VINH2 = 0V/27V, VS2 = 27V INH2 IINH2L –3 +3 µA A
6WAKE2 Input Pin (only available at Transceiver 2)
6.1 High-level input voltage WAKE2 VWAKE2H
VS2
1V
VS2 +
0.3V V A
6.2 Low-level input voltage IWAKE2 = typically –3µA WAKE2 VWAKE2L –1V VS2
3.3V V A
6.3 Wake2 pull-up current VS2 < 27V WAKE2 IWAKE2 –30 –10 µA A
6.4 High-level leakage current VS2 = 27V, VWAKE2 = 27V WAKE2 IWAKE2 –5 +5 µA A
7LIN Bus Driver
7.1 Driver recessive output voltage RLOAD = 500Ω/1kΩLIN VBUSrec
0.9 ×
VS
VSV A
7.2 Driver dominant voltage
VBUSdom_DRV_LoSUP
VVS = 7V, Rload = 500ΩLIN V_LoSUP 1.2 V A
7.3 Driver dominant voltage
VBUSdom_DRV_HiSUP
VVS = 18V, Rload = 500ΩLIN V_HiSUP 2 V A
7.4 Driver dominant voltage
VBUSdom_DRV_LoSUP
VVS = 7V, Rload = 1000ΩLIN V_LoSUP_1k 0.6 V A
7.5 Driver dominant voltage
VBUSdom_DRV_HiSUP
VVS = 18V, Rload = 1000Ω LIN V_HiSUP_1k_ 0.8 V A
7.6 Pull-up resistor to VSThe serial diode is mandatory LIN RLIN 20 30 47 kΩA
7.7 Voltage drop at the serial diodes In pull-up path with Rslave
ISerDiode = 10mA LIN VSerDiode 0.4 1.0 V D
7.8 LIN current limitation
VBUS = VBAT_max
LIN IBUS_LIM 40 120 200 mA A
7.9
Input leakage current at the
receiver, including pull-up
resistor as specified
Input leakage current
driver off
VBUS = 0V, VS = 12V
LIN IBUS_PAS_dom –1 mA A
7.10 Leakage current LIN recessive
Driver off
8V < VBAT < 18V
8V < VBUS < 18V
VBUS VBAT
LIN IBUS_PAS_rec 10 20 µA A
7.11
Leakage current at ground loss;
control unit disconnected from
ground; loss of local ground
must not affect communication in
the residual network
GNDDevice = VS
VBAT =12V
0V < VBUS < 18V
LIN IBUS_NO_Gnd –10 +0.5 +10 µA A
5. Electrical Characteristics (Continued)
5V < VS < 27V, Tj = –40°C to +150°C; the values below are valid for each of the two nearly identical integrated LIN transceivers unless
otherwise specified.
No. Parameters Test Conditions Pin Symbol Min. Typ. Max. Unit Type*
*) Type means: A = 100% tested, B = 100% correlation tested, C = Characterized on samples, D = Design parameter
13Atmel ATA6670 [DATASHEET]
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7.12
Leakage current at loss of
battery, node has to sustain the
current that can flow under this
condition, bus must remain
operational under this condition
VBAT disconnected
VSUP_Device = GND
0V < VBUS < 18V
LIN IBUS_NO_Bat 0.1 2µA A
7.13 Capacitance on pin LIN to GND LIN CLIN 20 pF D
8LIN Bus Receiver
8.1 Center of receiver threshold VBUS_CNT =
(Vth_dom + Vth_rec)/2 LIN VBUS_CNT
0.475 ×
VS
0.5 ×
VS
0.525
× VS
V A
8.2 Receiver dominant state VEN = 5V LIN VBUSdom –27 0.4 ×
VS
V A
8.3 Receiver recessive state VEN = 5V LIN VBUSrec
0.6 ×
VS
40 V A
8.4 Receiver input hysteresis VHYS = Vth_rec – Vth_dom LIN VBUShys
0.028 ×
VS
0.1 ×
VS
0.175
× VS
V A
8.5 Pre-wake detection LIN
high-level input voltage LIN VLINH
VS
2V
VS +
0.3V V A
8.6 Pre-wake detection LIN
Low-level input voltage Switches the LIN receiver on LIN VLINL –27V VS
3.3V V A
8.7 LIN pre-wake pull-up current VS < 27V
VLIN = 0V LIN ILINWAKE –30 –10 µA A
9Internal Timers
9.1 Dominant time for wake-up via
LIN bus VLIN = 0V LIN tBUS 30 90 150 µs A
9.2
Debounce time of low pulse for
wake-up via pin WAKE2 (only
available at transceiver 2).
Transceiver 2:
locla wake-up
VWAKE2 = 0V
WAKE2 tWAKE 735 50 µs A
9.3
Time delay for mode change
from Fail-safe mode to Normal
mode via pin EN
VEN = 5V EN tnorm 2 7 15 µs A
9.4
Time delay for mode change
from Normal mode into Sleep
mode via pin EN
VEN = 0V EN tsleep 712 20 µs B
9.5 TXD dominant time out time VTXD = 0V TXD tdom 27 55 70 ms A
9.6 Monitoring time for wake-up over
LIN bus LIN tmon 610 15 ms A
5. Electrical Characteristics (Continued)
5V < VS < 27V, Tj = –40°C to +150°C; the values below are valid for each of the two nearly identical integrated LIN transceivers unless
otherwise specified.
No. Parameters Test Conditions Pin Symbol Min. Typ. Max. Unit Type*
*) Type means: A = 100% tested, B = 100% correlation tested, C = Characterized on samples, D = Design parameter
14Atmel ATA6670 [DATASHEET]
9204F–AUTO–06/12
10
LIN Bus Driver AC Parameter with Different Bus Loads
Load 1 (small): 1nF, 1kΩ; Load 2 (large): 10nF, 500Ω; RRXD = 5kΩ; CRXD = 20pF;
Load 3 (medium): 6.8nF, 660Ω characterized on samples; 10.1 and 10.2 specifies the timing parameters for proper
operation at 20Kbit/s, 10.3 and 10.4 at 10.4Kbit/s.
10.1 Duty cycle 1
THRec(max) = 0.744 × VS
THDom(max) = 0.581 × VS
VS = 7.0V to 18V
tBit = 50µs
D1 = tbus_rec(min) /(2 × tBit)
LIN D1 0.396 A
10.2 Duty cycle 2
THRec(min) = 0.422 × VS
THDom(min) = 0.284 × VS
VS = 7.0V to 18V
tBit = 50µs
D2 = tbus_rec(max) /(2 × tBit)
LIN D2 0.581 A
10.3 Duty cycle 3
THRec(max) = 0.778 × VS
THDom(max) = 0.616 × VS
VS = 7.0V to 18V
tBit = 96µs
D3 = tbus_rec(min) /(2 × tBit)
LIN D3 0.417 A
10.4 Duty cycle 4
THRec(min) = 0.389 × VS
THDom(min) = 0.251 × VS
VS = 7.0V to 18V
tBit = 96µs
D4 = tbus_rec(max) /(2 × tBit)
LIN D4 0.590 A
11 Receiver Electrical AC Parameters of the LIN Physical Layer
LIN receiver, RXD load conditions: CRXD = 20pF, Rpull-up = 5kΩ
11.1 Propagation delay of receiver
(see Figure 5-1 on page 15)
trec_pd = max(trx_pdr , trx_pdf)
VS = 7.0V to 18V RXD trx_pd 6µs A
11.2
Symmetry of receiver
propagation delay rising edge
minus falling edge
trx_sym = trx_pdr – trx_pdf
VS = 7.0V to 18V RXD trx_sym –2 +2 µs A
5. Electrical Characteristics (Continued)
5V < VS < 27V, Tj = –40°C to +150°C; the values below are valid for each of the two nearly identical integrated LIN transceivers unless
otherwise specified.
No. Parameters Test Conditions Pin Symbol Min. Typ. Max. Unit Type*
*) Type means: A = 100% tested, B = 100% correlation tested, C = Characterized on samples, D = Design parameter
15Atmel ATA6670 [DATASHEET]
9204F–AUTO–06/12
Figure 5-1. Definition of Bus Timing Parameter
Figure 5-2. Typical Application Circuit
TXD
(Input to transmitting node)
VS
(Transceiver supply
of transmitting node)
RXD
(Output of receiving node1)
RXD
(Output of receiving node2)
LIN Bus Signal
Thresholds of
receiving node1
Thresholds of
receiving node2
tBus_rec(max)
trx_pdr(1)
trx_pdf(2)
trx_pdr(2)
trx_pdf(1)
tBus_dom(min)
tBus_dom(max)
THRec(max)
THDom(max)
THRec(min)
THDom(min)
tBus_rec(min)
tBit tBit
tBit
100nF
560pF
22µF/50V
1
RXD1
EN1
TXD1
RXD2
EN2
WAKE2
TXD2
RXD1
EN1
+5V
TXD1
RXD2
EN2
ADC
VCC
GND
TXD2
VS1
S1
C2 C1 C4
C3 560pF
LIN1
GND1
INH2
VS2
LIN1
GND
VBAT
LIN2
LIN2
GND2
2
3
4
5
Wake
Switch
6
7
14
13
12
11
10
9
8
R1
4.7kΩ
R6
R7
2.7kΩ
R2
4.7kΩ
+
R5
10kΩ
R3
1kΩ
D3
LL4148
R4
1kΩ
D2
LL4148
D1
LL4148
R8
Atmel
ATA6670
(DFN14)
Micro-
controller
16Atmel ATA6670 [DATASHEET]
9204F–AUTO–06/12
Figure 5-3. Application with Minimum External Devices: INH2 Output and WAKE2 Input Not Used
100nF 560pF
22µF/50V
1
RXD1
EN1
TXD1
RXD2
EN2
WAKE2
TXD2
RXD1
EN1
+5V
TXD1
RXD2
EN2
VCC
GND
TXD2
VS1
C2 C1 C4
C3 560pF
LIN1
GND1
INH2
VS2
LIN1
GND
VBAT
LIN2
LIN2
GND2
2
3
4
5
6
7
14
13
12
11
10
9
8
R1
4.7kΩ
R2
4.7kΩ
+
R3
1kΩ
D3
LL4148
R4
1kΩ
D2
LL4148
Atmel
ATA6670
(DFN14)
Micro-
controller D1
LL4148
17Atmel ATA6670 [DATASHEET]
9204F–AUTO–06/12
7. Package Information
Figure 7-1. DFN14
6. Ordering Information
Extended Type Number Package Remarks
ATA6670-FFQW DFN14 LIN Transceiver, Pb-free, 6k, taped and reeled.
TITLE DRAWING NO. REV.
Package Drawing Contact:
packagedrawings@atmel.com 6.543-5166.02-4
COMMON DIMENSIONS
(Unit of Measure = mm)
MIN NOM NOTEMAXSymbol
1
Exposed pad 3.9x1.6
Package: VDFN_4.5x3_14L
04/01/10
Dimensions in mm
specifications
according to DIN
technical drawings
0.02 0.050.0A1
3 3.12.9E
0.28 0.350.25b
0.65 BSCe
0.4 0.450.35L
1.6 1.651.55E2
3.9 3.953.85D2
4.5 4.64.4D
0.2 0.250.15A3
0.9 10.8A
D
1
Partially Plated Surface
14
PIN 1 ID
E
b
L
Z 10:1
A
A3
A1
Top View
Side View
Bottom View
e
D2
17
14 8
E2
Z
18Atmel ATA6670 [DATASHEET]
9204F–AUTO–06/12
8. Revision History
Please note that the following page numbers referred to in this section refer to the specific revision mentioned, not to this
document.
Revision No. History
9204F-AUTO-06/12 Section 5 “Electrical Characteristics” numbers 3.2 and 4.2 on page 11 changed
9204E-AUTO-11/11 Set datasheet from Preliminary to Standard
9204D-AUTO-10/11 Section 6 “Electrical Characteristics” number 9.2 on page 14 added
9204C-AUTO-09/11 Section 7 “Ordering Information” on page 18 changed
9204B-AUTO-03/11 Figure 1-1 “Block Diagram” on page 2 changed
Section 3.15 “Fail-safe Features” on page 10 changed
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