SIEMENS PNP Silicon AF Transistor @ For general AF application @ High collector current @ High current gain @ Low collector-emitter saturation voltage @ Complementary type: BCP 68 (NPN) BCP 69 { VPSO5163 Type Marking Ordering Code Pin Configuration | Package (tape and reel) 1 2 3 4 BCP 69 BCP 69 Q62702-C2130 B Cc E | C | SOT-223 BCP 69-10 BCP 69-10 | Q62702-C2131 BCP 69-16 BCP 69-16 | Q62702-C2132 BCP 69-25 BCP 69-25 | Q62702-C2133 Maximum Ratings Parameter Symbol Values Unit Collector-emitter voltage Vceo 20 Vv Vces 25 Collector-base voltage Vceo 25 Emitter-base voltage Vepo 5 Collector current Ic 1 A Peak collector current Tom 2 Base current Is 100 mA Peak base current Jem 200 Total power dissipation, 7s = 124 C?) Prot 1.5 Ww Junction temperature Tj 150 Cc Storage temperature range Tag 65... + 150 Thermal Resistance Junction - ambient?) Rinua <72 KAW Junction - soldering point Rinus <17 1), For detailed information see chapter Package Outlines. 2) Package mounted on epoxy pcb 40 mm x 40 mm x 1.5 mm/6 cm? Cu. Semiconductor Group 549 01.97SIEMENS BCP 69 Electrical Characteristics at Ta = 25 C, unless otherwise specified. Parameter Symbol Values Unit min . | typ. | max. DC characteristics Collector-ermitter breakdown voltage Ic = 30 mA, jn = 0 Vieryceo 20 Coilector-emitter breakdown voltage Ic = 10 pA, Vac = 0 Viaryces 25 Collector-base breakdown voltage Ic =10 pA, to =0 Vipayceo 25 Emitter-base breakdown voltage fe = 10 pA, /2 =O Vier)eBo Collector-base cutoff current Vea = 25 V Ves = 25 V, Ta = 150C Iceo 100 100 nA Emitter-base cutoff current Ves=5V,Ic=0 TeBo 100 nA DC current gain? Io= 5mMA, Vee=10V Ic = 500 mA, Vce= 1V BCP 69 BCP 69-10 BCP 69-16 BCP 69-25 Ie=1A, Vee=1V Are 375 160 250 375 Collector-emitter saturation voltage) Ic=1A, le=100 mA VeeEsat 0.5 Base-emitter voltage? Ico =5mA, Vce=10V Is=1A, Vee=1V Vee AC characteristics Transition frequency Ic = 100 mA, Vee = 5 V, f = 100 MHz 100 MHz 1) Pulse test conditions: r< 300 ys, D= 2%. Semiconductor Group 550SIEMENS BCP 69 Total power dissipation Pro = f (Ta*; Ts) Transition frequency ft = f (Jc) * Package mounted on epoxy Vce = 5 V, f= 100 MHz 1.6 ecp 69 EHPO0282 10 BcP 69 EHPOO283 W MHz 1.4 f a) tot 4 1.2 | 1.0 0.8 10 0.6 5 0.4 0.2 0 ~ 10 0 50 100 C 150 10 10! 107 ma 10 aoe es T, ae Te Collector cutoff current /cso = f (7s) DC current gain fre = f (7c) Ves = 25 V Ves = 1V 108 BCP 69 EHPOO284 108 ecp 69 EHPOO2BS nA 5 Lego fee 104 10 3 10 5 10? 10" 5 10! 0 10 109 50 100 C 150 0 10! 10? mA 104 Semiconductor Group 551SIEMENS BCP 69 Collector-emitter saturation voltage = f (Veesat) hee = 10 4 HPO0286 10 acre g Ip mA 0 0.2 0.4 0.6 VY 0.8 Verso Permissible pulse load Pict max/Prot pc = f (tp) 3 BCP 69 EHPOOZE8 1 Too Pra CU CTT CTT CT TU Fiol_max Porte il ll pelt fy Nn 10? Ni u om = a 5 CONG a hy Nal it rr + ey ai 10" foal ny le et s He rT oil x tH cH oH a LN Nl Ht LTT eT 10 so to 107% 107? ~=s 10" ~ /, Semiconductor Group Base-emitter saturation voltage = f (Veess) here = 10 I 552 ace 69 104 EHPOO2B7 mA 103 102 10! 0 10 0.4 06 08 %VY 1.2 _ Vee sat