G E SOLID STATE O1 De Bp aazsoai OOL7411 1 i . 3875081 GE SOLID STATE QOiE i7STtt D 7-29-17 Signal Transistors 2N3390-94, 2N3391A Silicon Transistors TO-98 The GE/RCA 2N3390-94, 2N3391A are planar, passivated and high gain amplifier or driver applications. These types NPN silicon transistors designed for use in general-purpose _ are supplied in JEDEC TO-98 package. Devices in TO-98 package are supplied with and without seating flange (see Dimensional Outline). MAXIMUM RATINGS, Absolute-Maximum Values: COLLECTOR TO EMITTER VOLTAGE (Voge) ocr ere ete ee ee en te ee ene e Ee eee e tebe rE ED EEE EERE een ea tn SEE EMITTER TO BASE VOLTAGE (Vego)....--- +> COLLECTOR TO BASE VOLTAGE (Vcgq) ----- CONTINUOUS COLLECTOR CURRENT (Ic) -..- TOTAL POWER DISSIPATION (Ta = 25C) (Pq) 00. c cc ee een ee OnE OEE eee EEE E EE rE bee EEE tee TOTAL POWER DISSIPATION (Tg 5 25C) (Pq). eee cee ree ene EE eee RL een etn ent Tele ents iW DERATE FACTOR (Ta > 25C) . 0. cece cee ec cree eee eee tee EERO PRES EET TEE CREE ETE eR EES 2.8 mWiec DERATE FACTOR (Tg > 25C). eee en ENE EERE Een EE ere EE Nene enn eee ene BmWiIPC OPERATING TEMPERATURE (Ty) STORAGE TEMPERATURE (Tst@) 55 to + 150C LEAD TEMPERATURE, 1/16" 4 1492(1.68mm 4 0.8mm) from case for 10s MAaXx(TL). 1... ee rece cece teeter erent cent eee tee + 260C ELECTRICAL CHARACTERISTICS, At Ambient Temperature (Ta) = 25C Unless Otherwise Specified Limits CHARACTERISTICS SYMBOL MIN. TYP. MAX, UNITS Collector-Emitter Breakdown Voltage (Ig = 1mMA, Ip = 0) BYceo 25 = - Collector-Base Breakdown Voltage (Io = 0.1pA, Ir = 0) BVcs0 25 - - v Collector Cutott Current (Vog = 18V, Ie = 0) lego _ - 0.1 HA Emitter Cutoff Current (Veg = 5V, Io = 0) _lepo - - 0.1 DG Forward Current Transfer Ratio (Ig = 2MA, Vog = 4.5V) 3390 400 - 800 3391, 3391A h 250 - 00 3392 FE 150 - 300 - 3393 90 - 180 3394 55 - 110 Output Capacitance (Veg = 10V, Ie = 0, f = 1MHz) Cop - 2 10 pF Nolse Figure (ig = 100uA, Voge = 4.5V, Rg = 5000 Q)For2N3391A only NF - 19 5 dB Fite Number 2053 15G E SOLID STATE OL Def} sa7soa1 oo1zse 3 i 3875081 GE SOLID STATE O1E 17912 OD . Signal Transistors T 2 G- / g 2N3390-94, 2N3391A TURE (Ta )= 25C 2 a rd 6 % 2 & e b 6 a o e = 2 2 4 -EMITTER VOLTAGE (Vce)=5 TO: AMBIENT TEMPERATURE (T, 2 464 2 4 686 2 4 6 1 O41 400 COLLECTOR CURRENT (ic}-mA COLLECTOR CURRENT (Ic) - mA 925-42603 g2cs-42m Fig. 1-Typical de forward current transfer ratio characteristic for Fig. 2Typical de forward current transfer ratio characteristic for 2N3391 and 2N3397A. 2N3392, and 2N3393, and 2N3394, *L |hre NORMALIZED AT Ig=0 Ot mA & 4) COLLECTOR-TO-EMITTER VOLTAGE (ce) =5 y | | Iq=2mA, Ta = 25C, 1 \ w hee NORMALIZED AT Ic = 2 mA, Ta = 25C Zz 1 ig = 0.1 mA | Z _ FE 5 a Ig=2 wh \y = ef 15 21 . cm = Lr awe |) > fer] oe va 2a +E | Bo; ra ge | a SEL a <S 1 SF LL] | a = oe [ | | oe 1] eo a 8 B as | 8 1 Rb 1 EI a 7 F ! 7 3 & a | = a t be zo 1 L ! Lu 1 rt = ou | -40. -20 0 20 40 60 80 100 -40 20 20 40 60 80 100 AMBIENT TEMPERATURE (Ta) -*C AMBIENT TEMPERATURE (Ta) - C 9205-42683 92CS-42715 Fig. 3Normalized de forward current transfer ratio characteristics Fig. 4Normalized de forward current transfer ratio characteristics for 2N3391 and 2N339TA. for 2N3392, 2N3393, and 2N3394, Ip = 20 Ice TEMPERATURE (Ta) = AMBIENT TEMPERATURE (Ta) = 25C a ae . ie = Wcesat)- a w 2 4 3 > 2 g < c 2 < a E = Y 3 5 o1 2 468 1 2 4 10 CURRENT (ig) - mA : COLLECTOR CURRENT (Ic) - mA 9208-42721 92C$- 42719 Fig. 5-- Typical collector-to-emitier saturation voltage characteristic Fig. 6Typical base-to-emitter voltage characteristic for 2N3392, for 2N3392, 2N3393, and 2N3304. 2N3399, and 2N3394. 16G E SOLID STATE 01 de aazsoas oov7a3a s 3875081 G E SOLID STATE O1E 17913 D Signal Transistors 2N3390-94, 2N3391A T29-17 AMBIENT TEMPERATURE (Ta) = > + w a 2 8 < 5 2 > Fv] E = y E w 2 os 20 40 60 80 400 =-:120 140 AMBIENT TEMPERATURE (Ta) - C COLLECTOR CURRENT {ig} mA secs: 42720 s2es-aarit Fig. 7Typical collector-to-base cutoff current characteristic for Fig. 8Typice! base-to-emitter voltage characteristic for 2N3392, 2N3391, 2N3391A, 2N3392, 2N3393, and 2N3394. 2N9303, and 2N3394. =aare P 500[coLLECTOR-TO-EMITTER VOLTAGE (Vpe)#10V ana fe thee es AMBIENT TEMPERATURE (T,)* 25C {___ Z 400 A a & Le" E iS ES 200) | ae | 5 te 2 s 2 200 e iM 5 Z | 3 % 10 & @ zg < Fd 001 2 4 6 My a6 ry 2 6 "0 2 o4 4 1 $00 COLLECTOR CURRENT ( 1)mA COLLECTOR CURRENT (ic) = mA 92CS- 42684 g2cs-42715 Fig. 9Typical small-signal transfer ratio characteristic for 2N3391 Fig. 10 Typical small-signal current tanster ratio characteristic for and 2N339TA. 2N9392, 2N3393, and 2N2394. a ; * o = uw oa z z 2 a uw ec > (Ta) = 28C LLECTOR CURRENT (ic) - HA p2cs-azeus eo BASE-TO-EMITTER VOLTAGE (Ve) -V COLLECTOR-Y0-BASE VOLTAGE (Vcp)-V e2cs-a278 Fig, 11Typical contours of constant noise figure for 2N3391 and Fig. 12Typical input, output capacitance characteristics for all 2N339TA. types. 17G E SOLID STATE OL de fsa7soa, oonesay 7 [ 3875081 GE SOLID STATE Q1E 17914 DB Signal Transistors T 2 9 / ? 2N3390-94, 2N3391A {Ta}= OPTIMUM SOURCE RESISTANCE (Rg), Ag ~__ fj g g z 2 5 VOLTAGE NOISE (eR) - u/ za 4 eet 2 4g a 1 10 EMITTER CURRENT (Ig) - mA 9205-62722 oo Fig, 13-Equivalent input noise-voltage and nolse-current characteristics for 2N3392, 2N3393, and 2N3394, TERMINAL CONNECTIONS Sees Lead 1- Emitter Lead 2- Collector Lead 3-Base 18