2002-2012 Microchip Technology Inc. DS21415D-page 1
TC426/TC427/TC428
Features:
• High-Speed Switchin g (CL = 1000 pF): 30 nsec
• High Peak Output Current: 1.5A
• High Output Voltage Swing:
-V
DD -25 mV
- GND +25 mV
• Low Input Current (Logic ‘0’ or ‘1’): 1 A
• TTL/CMOS Input Compatible
• Available in Inverting and Noninverting
Configurations
• Wide Operating Supply Voltage:
- 4.5V to 18V
• Current Consumption:
- Inputs Low – 0.4 mA
- Inputs High – 8 mA
• Single Supply Operation
• Low Output Impedance: 6
• Pinout Equivalent of DS0026 and MMH0026
• Latch-Up Resistant: Withstands > 500 mA
Reverse Current
• ESD Protected: 2 kV
Applications:
• Switch Mode Power Supplies
• Pulse Transformer D rive
• Clock Line Driver
• Coax C abl e Driv er
Device Selection Table
Package Type
General Description:
The TC426/TC427/TC428 are dual CMOS high-speed
drivers. A TTL/CMOS input voltage level is translated
into a rail-to-rail ou tput voltage level sw in g. T he CMOS
output is within 25 mV of ground or positive supply.
The low-impedance, high-current driver outputs swing
a 1000 pF load 1 8V in 30 nsec. The uni que current and
voltage drive qualities make the TC426/TC427/TC428
ideal power MOSFET drivers, line drivers, and DC-to-
DC converter building blocks.
Input logic signa ls may equal the power suppl y voltag e.
Input current is a low 1 A, making direct interface
to CMOS/bipolar switch-mode power supply control
ICs possible, as well as open-collector analog
comparators.
Quiescent power supply current is 8 mA max imum. The
TC426 requires 1/5 the current of the pin-compatible
bipolar DS0026 device. This is important in DC-to-DC
convert er applicati ons with power efficien cy constraint s
and high-frequency switch-mode power supply
applications. Quiescent current is typically 6 mA when
driving a 1000 pF load 18V at 100 kHz.
The inverting TC426 driver is pin-compatible with the
bipolar DS0026 and MMH0026 devices. The TC427 is
noninve rting; the TC428 cont ains an invertin g and no n-
inverting driver.
Other pin compatible driver families are the TC1426/
TC1427/TC1428, TC4426/TC4427/TC4428 and
TC4426A/TC4427A/TC4428A.
Part
Number Package Configuration Temp.
Range
TC426COA
TC426CPA
TC426EOA
TC426EPA
TC426IJA
TC426MJA
8-Pin SOIC
8-Pin PDIP
8-Pin SOIC
8-Pin PDIP
8-Pin CERDIP
8-Pin CERDIP
Inverting
Inverting
Inverting
Inverting
Inverting
Inverting
0°C to +70°C
0°C to +70°C
-40°C to +85°C
-40°C to +85°C
-25°C to +85°C
-55°C to +125°C
TC427COA
TC427CPA
TC427EOA
TC427EPA
TC427IJA
TC427MJA
8-Pin SOIC
8-Pin PDIP
8-Pin SOIC
8-Pin PDIP
8-Pin CERDIP
8-Pin CERDIP
Noninverting
Noninverting
Noninverting
Noninverting
Noninverting
Noninverting
0°C to +70°C
0°C to +70°C
-40°C to +85°C
-40°C to +85°C
-25°C to +85°C
-55°C to +125°C
TC428COA
TC428CPA
TC428EOA
TC428EPA
TC428IJA
TC428MJA
8-Pin SOIC
8-Pin PDIP
8-Pin SOIC
8-Pin PDIP
8-Pin CERDIP
8-Pin CERDIP
Complementary
Complementary
Complementary
Complementary
Complementary
Complementary
0°C to +70°C
0°C to +70°C
-40°C to +85°C
-40°C to +85°C
-25°C to +85°C
-55°C to +125°C
TC426
1
2
3
4
NC
5
6
7
8
OUT A
OUT B
NC
IN A
GND
IN B
NC = No internal connection
2, 4 7, 5
Inverting
TC427
1
2
3
4
NC
5
6
7
8
OUT A
OUT B
NC
IN A
GND
IN B
2, 4 7, 5
Noninverting
TC428
1
2
3
4
NC
5
6
7
8
OUT A
OUT B
NC
IN A
GND
IN B
2 7
4 5
V
DD
Complementary
V
DD
V
DD
8-Pin PDIP/SOIC/CERDIP
1.5A Dual High-Speed Power MOSFET Drivers
TC426/TC427/TC428
DS21415D-page 2 2002-2012 Microchip Technology Inc.
Functional Block Diagram
Input
V+
≈2.5 μA
≈500
μ
A
NOTE: TC428 has one inverting and one noninverting driver.
Ground any unused driver input.
Inverting
Output
Noninverting
Output
(TC426)(TC427)
GND
TC426
TC427
TC428
2002-2012 Microchip Technology Inc. DS21415D-page 3
TC426/TC427/TC428
1.0 ELECTRICAL
CHARACTERISTICS
Absolute Maximum Ratings*
Supply Voltage.....................................................+20V
Input Voltage, Any Terminal
...................................VDD + 0.3V to GND – 0.3V
Power Dissipation (TA 70°C)
PDIP........................................................730 mW
CERDIP ..................................................800 mW
SOIC .......................................................470 mW
Derating Factor
PDIP.......................................................8 mW/°C
CERDIP ..............................................6.4 mW/°C
SOIC ......................................................4 mW/°C
Operati ng Tem pe r atu re Ra nge
C Version ........................................0°C to +70°C
I Version.......................................-25°C to +85°C
E Version......................................-40°C to +85°C
M Version...................................-55°C to +125°C
Storage Temperature Range..............-65°C to +150°C
*Stresses above those listed under “Absolute
Maximum Ratings” may cause permanent damage to
the devi ce. These are stress ratin gs only and fun ctional
operatio n of the devic e at these or an y other con ditions
above those indicated in the operation sections of the
specifications is not implied. Exposure to Absolute
Maximum Rating conditions for extended periods may
affect device reliability.
TC426/TC427/TC428 ELECTRICAL SPECIFICATIONS
Electrical Characteristics: TA = +25°C with 4.5V VDD18V, unless otherwise noted.
Symbol Parame ter Min Typ Max Units Test Conditions
Input
VIH Logic 1, High Input Volt age 2.4 — — V
VIL Logic 0, Low Input Voltage — — 0.8 V
IIN Input Current -1 — 1 A0VVINVDD
Output
VOH High Output Voltage VDD – 0.025 — — V
VOL Low Output V oltage — — 0.025 V
ROH High Output Resistance — 10 15 IOUT = 10 mA, VDD = 18V
ROL Low Output Resistance — 6 10 IOUT = 10 mA, VDD = 18V
IPK Peak Output Current — 1.5 — A
Switching Time (Note 1)
tRRise T ime — — 30 nsec Figure 3-1, Figure 3-2
tFFall Ti me — — 30 nsec Figure 3-1, Figure 3-2
tD1 Delay Time — — 50 nsec Figure 3-1, Figure 3-2
tD2 Delay Time — — 75 nsec Figure 3-1, Figure 3-2
Power Supply
ISPower Supply Current —
——
—8
0.4 mA VIN = 3V (Both Inputs)
VIN = 0V (Both Inputs)
Note 1: Switching times ensured by des ign.
TC426/TC427/TC428
DS21415D-page 4 2002-2012 Microchip Technology Inc.
TC426/TC427/TC428 ELECTRICAL SPECIFICATIONS (CONTINUED)
Electrical Characteristics: Over operating temperature range with 4.5V VDD18V, unless otherwise noted.
Input
VIH Logic 1, High Input Volt age 2.4 — — V
VIL Logic 0, Low Input Voltage — — 0.8 V
IIN Input Current -10 — 10 A0VVINVDD
Output
VOH High Output Voltage VDD – 0.025 — — V
VOL Low Output V oltage — — 0.025 V
ROH High Output Resistance — 13 20 IOUT = 10 mA, VDD = 18V
ROL Low Output Resistance — 8 15 IOUT = 10 mA, VDD = 18V
Switching Time (Note 1)
tRRise T ime — — 60 nsec Figure 3-1, Figure 3-2
tFFall T ime — — 60 nsec Figure 3-1, Figure 3-2
tD1 Delay Time — — 75 nsec Figure 3-1, Figure 3-2
tD2 Delay Time — — 120 nsec Figure 3-1, Figure 3-2
Power Supply
ISPower Supply Current —
——
—12
0.6 mA VIN = 3V (Both Inputs)
VIN = 0V (Both Inputs)
Note 1: Switching times ensured by des ign.
2002-2012 Microchip Technology Inc. DS21415D-page 5
TC426/TC427/TC428
2.0 PIN DESCRIPTIONS
The descriptions of the pins are listed in Table 2 -1.
TABLE 2-1: PIN FUNCTION TABLE
Pin No.
(8-Pin PDIP,
SOIC, CERDIP) Symbol Description
1NC No Internal Connection.
2IN A Control Input A, TTL/CMOS compatible logic input.
3 GND Ground.
4 IN B Control Input B, TTL/CMOS compatible logic input.
5 OUT B CMOS totem-pole output.
6V
DD Supply input, 4.5V to 18V.
7 OUT A CMOS totem-pole output.
8 NC No internal Connection.
TC426/TC427/TC428
DS21415D-page 6 2002-2012 Microchip Technology Inc.
3.0 APPLICATIONS INFORMATION
3.1 Supply Bypassing
Charging and discharging large capacitive loads
quic kly requ ir es l arge cur rents. Fo r ex amp le, char gi ng
a 1000 pF load to 18V in 25 nsec requires an 0.72A
current from the device power supply.
To ensure low sup ply impedance over a wide frequency
range, a parallel capacitor combination is recom-
mended for supply bypassing . Low-indu ctance c eramic
disk capacit ors with short lead lengths (< 0.5 in.) shoul d
be used. A 1 F film capacitor in parallel with one or two
0.1 F ceramic disk capacitors normally provides
adequate bypassing.
3.2 Grounding
The TC426 and TC428 contain inverting drivers.
Ground potential drops developed in common ground
impedances from input to output will appear as
negative feedback and degrade switching speed
characteristics.
Individual ground returns for the input and output
circuits or a ground plane should be used.
3.3 Input Stage
The input voltage level changes the no-load or
quiescent supply current. The N-channel MOSFET
input stage transistor drives a 2.5 mA current source
load. With a logic ‘1’ input, the maximum quiescent
supply current is 8 mA. Logic ‘0’ input level signals
reduce quiescent current to 0.4 mA maximum.
Minimum power dissipation occurs for logic ‘0’ inputs
for the TC426/TC427/TC428. Unused driver inputs
must be connected to VDD or GND.
The drivers are designed with 100 mV of hysteresis.
This provides clean transitions and minimizes output
stage current spiking when changing states. Input
voltage thresholds are approximately 1.5V, making the
device TTL compatible over the 4.5V to 18V supply
operating range. Input current is less than 1 A over
this range.
The TC426/TC427/TC428 may be directly driven by
the TL494, SG1526/1527, SG1524, SE5560, and
similar switch-mode power supply integrated circuits.
3.4 Power Dissipation
The supply current vs frequency and supply current
vs capacitive load characteristic curves will aid in
determining power dissipation calculations.
The TC426/TC427/TC428 CMOS drivers have greatly
reduced quiescent DC power consumption. Maximum
quiescent current is 8 mA compared to the DS0026 40
mA specification. For a 15V supply, power dissipation
is typically 40 mW.
Two other power dissipation components are:
• Output stage AC and DC load power.
• Transition state power.
Output stage power is:
Po = PDC + PAC
= Vo (IDC) + f CL VS2
Where:
Vo = DC output volt ag e
IDC = DC output load current
f = Switching frequ enc y
Vs = Supply voltage
In power MOSFET drive applications the PDC term is
negligible. MOSFET power transistors are high-imped-
ance, capacitive input devices. In applications where
resistive loads or relays are driven, the PDC component
will normally dominate.
The magnitude of PAC is readily estimated for several
cases:
A. B.
1. f = 200 kHZ 1. f = 200 kHz
2. CL=1000 pf 2. CL=1000 pf
3. Vs = 18V 3. Vs = 15V
4. PAC = 65 mW 4. PAC = 45 mW
During output level state changes, a current surge will
flow through the series connected N and P channel
output MOSFETS as one device is turning “ON” while
the other is turning “OFF”. The current spike flows only
during out put transitions. The input levels should no t be
maintained between the logic ‘0’ and logic ‘1’ levels.
Unused driver inputs must be tied to ground and
not be all owed to float. A verage power dissipation will
be reduc ed by mini mizi ng inp ut rise ti mes. As sho wn i n
the characteristic curves, average supply current is
frequency dependent.
2002-2012 Microchip Technology Inc. DS21415D-page 7
TC426/TC427/TC428
FIGURE 3-1: Inverting Driver Switch ing
Time Test Circuit FIGURE 3-2: Noninverting Driver
Switching Time Test Circuit
FIGURE 3-3: Voltage Doubler
FIGURE 3-4: Voltage Inverter
Output
Input
0.1 μF
V
DD
= 18V
+5V
Input
10%
90%
10%
90%
10%
90%
18V
Output
t
D1
t
F
t
R
t
D2
C
L
= 1000 pF
1 μF
0V
0V
TC426
(1/2 TC428)
1
2
Input: 100 kHz,
square wave,
t
RISE
= t
FALL
≤ 10 nsec
Output
Input
90%
10%
10% 10%
90%
TC427
(1/2 TC428)
+5V
Input
18V
Output
0V
0V
90%
1
2
0.1 μF
1 μF
tD1
tF
tR
tD2
VDD = 18V
CL = 1000 pF
Input: 100 kHz,
square wave,
tRISE = tFALL ≤ 10 nsec
+15V
0.1 μF 4.7 μF
10 μF
47 μF
+
–
+
–
+
–1N4001
1N4001
V
OUT
f
IN
= 10 kHz
2
6
3
7
29.
27.
25.
23.
0
10 20 30 40 50 60 70 80 90
I
OUT
(mA)
28.
26.
24.
22.
30.
100
V
OUT
(V)
1/2
TC426
+15V
0.1 μF 4.7 μF
10 μF
47 μF
+
–
+– 1N4001
1N4001
2
6
3
7
1/2
TC426
+–
-6
-8
-10
-12
010 20 30 40 50 60 70 80 90
-7
-9
-11
-13
-5
-14 100
I
OUT
(mA)
V
OUT
(V)
V
OUT
f
IN
= 10 kHz
TC426/TC427/TC428
DS21415D-page 8 2002-2012 Microchip Technology Inc.
4.0 TYPICAL CHARACTERISTICS
Note: The g r aph s a nd t ables p r ov ide d fo llo w ing thi s n ote a r e a st atistic al su mm ary bas ed on a limit ed number o f
samples and are provided for informational purposes only. The performance characteristics listed herein
are not tested or guaranteed. In some graphs or tables, the data presented may be outside the specified
operating range (e.g., outside specified power supply range) and therefore outside the warranted range.
30
20
10
0
-25
0 25 150
TIME (ns)
Rise and Fall Times vs.
Temperature
40
50 75 100 125
TEMPERATURE (°C)
35
25
15
80
70
60
50
30
0
DELAY TIME (ns)
Delay Times vs. Supply Voltage
40
90
SUPPLY VOLTAGE (V)
5101520
t
D2
60
50
40
30
10
05
10
15 20
TIME (ns)
SUPPLY VOLTAGE (V)
70
t
R
t
F
C
L
= 1000 pF
T
A
= +25°C
Rise and Fall Times vs.
Supply Voltage
20
C
L
= 1000 pF
T
A
= +25°C
C
L
= 1000 pF
V
DD
= 18V
t
R
t
F
t
D1
100
1
10 1000 10K
TIME (ns)
CAPACITIVE LOAD (pF)
Rise and Fall Times vs.
Capacitive Load
10
1K
100
90
80
70
60
40
30
0
-25 50 100 150
DELAY TIME (ns)
TEMPERATURE (°C)
Delay Times vs. Temperature
50
100
25 75 125
70
60
50
40
20
0
10
SUPPLY CURRENT (mA)
Supply Current vs.
Capacitive Load
30
80
400 kHz
200 kHz
20 kHz
100 1000 10K
CAPACITIVE LOAD (pF)
10
C
L
= 1000 pF
V
DD
= 18V
t
D2
t
D1
T
A
= +25°C
V
DD
= 18V
T
A
= +25°C
V
DD
= 18V t
R
t
F
0.96
0.72
0.48
0.24
0
10
OUTPUT VOLTAGE (V)
Low Output vs. Voltage
1.20
20 30 40 50 60 70 80 90 100
CURRENT SUNK (mA)
10V
15V
1.76
1.32
0.88
0.44
0
10
High Output vs. Voltage
2.20
20 30 40 50 60 70 80 90 100
CURRENT SOURCED (mA)
18V
V
DD
– V
OUT
(V)
⎥⎥
13V
20
10
0
1
SUPPLY CURRENT (mA)
Supply Current vs. Frequency
30
10 100 1000
FREQUENCY (kHz)
10V
5V
T
A
= +25°C V
DD
= 5V
V
DD
= 8V
V
DD
= 18V
C
L
= 1000 pF
T
A
= +25°C T
A
= +25°C
2002-2012 Microchip Technology Inc. DS21415D-page 9
TC426/TC427/TC428
TYPICAL CHARACTERISTICS (CONTINUED)
0
20
15
10
5
0
SUPPLY VOLTAGE (V)
50 100 150 200 250 300
SUPPLY CURRENT (mA)
Supply Voltage vs.
Quiescent Supply Current
No Load
Both Inputs Logic ‘0’
T
A
= +25°C
123456
20
15
10
5
0
SUPPLY VOLTAGE (V)
SUPPLY CURRENT (mA)
Supply Voltage vs.
Quiescent Supply Current
No Load
Both Inputs Logic ‘1’
T
A
= +25°C
200
0
400
600
800
1000
1200
1400
1600
0 10 20 30 40 50 60 70 80 90 100 110 120
AMBIENT TEMPERATURE (°C)
MAX. POWER (mW)
8-Pin DIP
8-Pin CERDIP
8-Pin SOIC
Thermal Derating Curves
TC426/TC427/TC428
DS21415D-page 10 2002-2012 Microchip Technology Inc.
5.0 PACKAGING INFORMATION
5.1 Package Marking Information
Package marking data not availabl e at th is time.
5.2 Taping Form
Component Taping Orientation for 8-Pin MSOP Devices
Package Carrier Width (W) Pitch (P) Part Per Full Reel Reel Size
8-Pin MSOP 12 mm 8 mm 2500 13 in
Carrier Tape, Number of Components Per Reel and Reel Size
Pin 1
User Direction of Feed
Standard Reel Component Orientation
for 713 Suffix Device
W
P
Component Taping Orientation for 8-Pin SOIC (Narrow) Devices
Package Carrier Width (W) Pitch (P) Part Per Full Reel Reel Size
8-Pin SOIC (N) 12 mm 8 mm 2500 13 in
Carrier Tape, Number of Components Per Reel and Reel Size
Standard Reel Component Orientation
for 713 Suffix Device
Pin 1
User Direction of Feed
P
W
2002-2012 Microchip Technology Inc. DS21415D-page 11
TC426/TC427/TC428
5.3 Package Dimensions
3° Min.
Pin 1
.260 (6.60)
.240 (6.10)
.045 (1.14)
.030 (0.76)
.070 (1.78)
.040 (1.02)
.400 (10.16)
.348 (8.84)
.200 (5.08)
.140 (3.56)
.150 (3.81)
.115 (2.92)
.110 (2.79)
.090 (2.29)
.022 (0.56)
.015 (0.38)
.040 (1.02)
.020 (0.51) .015 (0.38)
.008 (0.20)
.310 (7.87)
.290 (7.37)
.400 (10.16)
.310 (7.87)
8-Pin Plastic DIP
Dimensions: inches (mm)
Note: For the most current package drawings, please see the Microchip Packaging Specification located
at http://www.microchip.com/packaging
TC426/TC427/TC428
DS21415D-page 12 2002-2012 Microchip Technology Inc.
Package Dimensions (Continued)
.400 (10.16)
.370 (9.40)
.300 (7.62)
.230 (5.84)
.065 (1.65)
.045 (1.14)
.055 (1.40) Max. .020 (0.51) Min.
Pin 1
.200 (5.08)
.160 (4.06)
.200 (5.08)
.125 (3.18)
.110 (2.79)
.090 (2.29)
.020 (0.51)
.016 (0.41)
.040 (1.02)
.020 (0.51)
.320 (8.13)
.290 (7.37)
.150 (3.81)
Min.
3° Min.
8-Pin CERDIP (Narrow)
.015 (0.38)
.008 (0.20)
.400 (10.16)
.320 (8.13)
Dimensions: inches (mm)
Note: For the most current package drawings, please see the Microchip Packaging Specification located
at http://www.microchip.com/packaging
2002-2012 Microchip Technology Inc. DS21415D-page 13
TC426/TC427/TC428
Package Dimensions (Continued)
.050 (1.27) Typ.
8
°
Max.
Pin 1
.244 (6.20)
.228 (5.79)
.157 (3.99)
.150 (3.81)
.197 (5.00)
.189 (4.80)
.020 (0.51)
.013 (0.33)
.010 (0.25)
.004 (0.10)
.069 (1.75)
.053 (1.35) .010 (0.25)
.007 (0.18)
.050 (1.27)
.016 (0.40)
8-Pin SOIC
Dimensions: inches (mm)
Note: For the most current package drawings, please see the Microchip Packaging Specification located
at http://www.microchip.com/packaging
TC426/TC427/TC428
DS21415D-page 14 2002-2012 Microchip Technology Inc.
6.0 REVISION HISTORY
Revision D (December 2012)
Added a note to each package outline drawing.
2002-2012 Microchip Technology Inc. DS21415D-page 15
TC426/TC427/TC428
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registration instructions.
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Users of Microchip products can receive assistance
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Customers should contact their distributor,
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support. Local sales offices are also available to help
customers. A listing of sales offices and locations is
included in the back of this document.
Technical support is a vailable through the web si te
at: http://microchip.com/support
TC426/TC427/TC428
DS21415D-page 16 2002-2012 Microchip Technology Inc.
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DS21415DTC426/TC427/TC428
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6. Is there any incorrect or misleading information (what and where)?
7. How would you improve this document?
2002-2012 Microchip Technology Inc. DS21415D-page 17
Information contained in this publication regarding device
applications a nd the lik e is provid ed only for your convenien ce
and may be supers ed ed by u pdates. I t is y our responsibil it y to
ensure that your application meets with your specifications.
MICROCHIP MAKES NO REPRESENTATIONS OR
WARRANTIES OF ANY KIND WHETHER EXPRESS OR
IMPLIED, WRITTEN OR ORAL, STATUTORY OR
OTHERWISE, RELATED TO THE INFORMATION,
INCLUDING BUT NOT LIMITED TO ITS CONDITION,
QUALITY, PERFORMANCE, MERCHANTABILITY OR
FITNESS FOR PURPOSE. Microchip disclaims all liability
arising from this information and its use. Use of Microchip
devices in life support and/or safety applications is entirely at
the buyer’s risk, and the buyer agrees to defend, indemnify and
hold harmless Microchip from any and all damages, claims,
suits, or expenses resulting from such use. No licenses are
conveyed, implicitly or otherwise, under any Microchip
intellectual property rights.
Trademarks
The Microchip name and logo, the Microchip logo, dsPIC,
FlashFlex, KEELOQ, KEELOQ logo, MPLAB, PIC, PICmicro,
PICSTART, PIC32 logo, rfPIC, SST, SST Logo, SuperFlash
and UNI/O are registered trademarks of Microchip T echnology
Incorporated in the U.S.A. and other countries.
FilterLab, Hampshire, HI-TECH C, Linear Active Thermistor,
MTP, SEEVAL and The Embedded Contr ol Solutions
Company are registered trademarks of Microchip Technology
Incorporated in the U.S.A.
Silicon Storage Technology is a registered trademark of
Microchip Technology Inc. in other countries.
Analog-for-the-Digital Age, Application Maestro, BodyCom,
chipKIT, chipKIT logo, CodeGuard, dsPICDEM,
dsPICDEM.net, dsPICworks, dsSPEAK, ECAN,
ECONOMONIT OR, FanSense, HI- TIDE, In-Circu it Se r i a l
Programm ing, ICSP, Mindi, MiWi, MPAS M, MPF, MPLAB
Certified logo, MPLIB, MPLINK, mTouch, Omniscient Code
Generation, PICC, PICC-18, PICDEM, PICDEM.net, PICkit,
PICtail, REAL ICE, rfLAB, Select Mode, SQI, Serial Quad I/O,
Total Endurance, TSHARC, UniWinDriver, WiperLock, ZENA
and Z-Scale are trademarks of Microchip Technology
Incorporated in the U.S.A. and other countries.
SQTP is a service mark of Microchip T echnology Incorporated
in the U.S.A.
GestIC and ULPP are registered trademarks of Microchip
Technology Germ any II GmbH & C o. & KG, a subsidiary of
Microchip Technology Inc., in other countries.
All other trademarks mentioned herein are property of their
respective companies.
© 2002-2012, Microchip Technology Incorporated, Printed in
the U.S.A., All Rights Reserved.
Printed on recycled paper.
ISBN: 9781620767900
Note the following details of the code protection feature on Microchip devices:
• M icrochip products meet the specification contained in their particular Microchip Data Sheet.
• M icrochip believes that its family of products is one of the most secure families of its kind on the market today, when used in the
intended manner and under normal conditions.
• There are dishonest and possibly illegal methods used to breach the code protection feature. All of these methods, to our
knowledge, require using the Microchip products in a manner outside the operating specifications contained in Microchip’s Data
Sheets. Most likely, the person doing so is engaged in theft of intellectual property.
• M icrochip is willing to work with the customer who is concerned about the integrity of their code.
• Neit her Microchip nor any other semiconductor manufacturer can guarantee the security of their code. Code protection does not
mean that we are guaranteeing the product as “unbreakable.”
Code protection is c onstantly evolving. We a t Microc hip are co m mitted to continuously improving the code prot ect ion featur es of our
products. Attempts to break Microchip’ s code protection feature may be a violation of the Digital Millennium Copyright Act. If such acts
allow unauthorized access to your software or other copyrighted work, you may have a right to sue for relief under that Act.
Microchip received ISO/TS-16949:2009 certification for its worldwide
headquarters, design and wafer fabrication facilities in Chandler and
Tempe, Arizona; Gresham, Oregon and design centers in California
and India. The Company’s quality system processes and procedures
are for its PIC® MCUs and dsPIC® DSCs, KEELOQ® code hopping
devices, Serial EEPROMs, microperiph erals, nonvolatile memory and
analog products. In addition, Microchip’s quality system for the design
and manufacture of development systems is ISO 9001:2000 certified.
QUALITY MANAGEMENT S
YSTEM
CERTIFIED BY DNV
== ISO/TS 16949 ==
DS21415D-page 18 2002-2012 Microchip Technology Inc.
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11/27/12
