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Schottky Barrier Diode
RB056L-40
Applications Dimensions(Unit : mm) Land size figure(Unit : mm)
General rectification
Features
1)Small power mold type.(PMDS)
2)Low IR
3)High reliability
Construction
Silicon epitaxial planer Structure
Taping specifications(Unit : mm)
Absolute maximum ratings(Ta=25C)
Symbol Unit
VRM V
VRV
Io A
IFSM A
Tj C
Tstg C
Electrical characteristics(Ta=25℃)
Symbol Min. Typ. Max. Unit
VF1- - 0.67 V IF=3.0A
VF2- - 0.58 V IF=2.0A
Reverse current IR--50AVR=40V
Conditions
(*1)Mounting on epoxi board. (Tc=63CMAX.)
Parameter
70
Junction temperature 150
Storage temperature -40to+150
Forward voltage
Parameter Limits
Reverse voltage (repetitive) 40
Reverse voltage (DC) 40
Average rectified forward current (*1) 3
Forward current surge peak (60Hz / 1cyc)
PMDS
2.0
4.2
2.0
4.0±0.12.9±0.1
4.0±0.1
2.0±0.05
φ1.55±0.05
5.5±0.05
1.75±0.1
12±0.2
φ1.55
9.5±0.1
0.3
5.3±0.1
　 0.05
2.8MAX
1/3 2010.08 - Rev.B
Data Sheet
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©2010 ROHM Co., Ltd. All rights reserved.
RB056L-40 　
Electrical characteristics curves
1
10
100
1000
0 100 200 300 400 500 600
FORWARD VOLTAGE : VF(mV)
VF-IF CHARACTERISTICS
FORWARD CURRENT : IF(mA)
0
1
2
3
0123
0.1
1
10
100
1000
0.001 0.01 0.1 1 10 100 1000
Rth(j-a)
Rth(j-c)
On glass-epoxy board
1ms
IM=100mA IF=1A
300s
time
0
50
100
150
200
250
300
0.1 1 10 100
t
Ifsm
0
20
40
60
80
100
1 10 100
8.3m
Ifsm
1cyc
8.3ms
0
10
20
430
440
450
460
470
480
AVE:454.3mV
0
5
10
15
20
25
30
AVE : 10.4ns
Ta=25C
IF=0.5A
IR=1A
Irr=0.25*IR
n=10pcs
0
50
100
150
200
AVE : 83.0A
8.3m
Ifsm 1cyc
VF DISPERSION MAP
FORWARD VOLTAGE : VF(mV)
REVERSE CURRENT : IR(uA)
IR DISPERSION MAP
IFSM DISRESION MAP
PEAK SURGE
FORWARD CURRENT : IFSM(A)
PEAK SURGE
FORWARD CURRENT : IFSM(A)
NUMBER OF CYCLES
IFSM-CYCLE CHARACTERISTICS
PEAK SURGE
FORWARD CURRENT : IFSM(A)
TIME : t(ms)
IFSM-t CHARACTERISTICS TIME : t(s)
Rth-t CHARACTERISTICS
TRANSIENT
THAERM AL I M PED AN C E : R t h (C/W)
FORWARD POWER
DISSIPATI ON : Pf (W )
AVERAGE RECTIFIED
FORWARD CURRENT : Io(A)
Io-Pf CHARACTERISTICS
trr DISPERSION MAP
REVERSE RECOVER Y T I M E : t rr(ns )
Ta=25C
IF=1A
n=30pcs
Ta=25C
VR=40V
n=30pcs
AVE : 4.08A
DC
D=1/2
Sin(=180)
Ta=125C
Ta=75C
Ta=150C
0.01
0.1
1
10
100
1000
10000
0 5 10 15 20 25 30 35 40
REVERSE VOLTAGE : VR(V)
VR-IR CHARACTERISTICS
REVERSE CURRENT : IR(A)
Ta=-25C
Ta=125C
Ta=25C
Ta=75C
Ta=150C
1
10
100
1000
0 5 10 15 20 25 30
REVERSE VOLTAGE : VR(V)
VR-Ct CHARACTERISTICS
CAPACIT AN C E BET WEEN
TERMIN ALS : C t (pF)
f=1MHz
0.25
0.26
0.27
0.28
0.29
0.3
Ct DISPERSION MAP
CAPACITAN C E BET WEEN
TERMINAL : Ct(nF)
AVE : 0.281nF
Ta=25C
f=1MHz
VR=0V
n=30pcs
Ta=-25C
Ta=25C
2/3 2010.08 - Rev.B
Data Sheet
www.rohm.com
©2010 ROHM Co., Ltd. All rights reserved.
RB056L-40 　
0
0.1
0.2
0.3
0.4
0.5
0.6
0 10203040
0
0.5
1
1.5
2
2.5
3
3.5
4
4.5
5
0 25 50 75 100 125 150 0
1
2
3
4
5
6
7
0 25 50 75 100 125
REVERSE POWER
DISSIPATI ON : PR (W)
REVERSE VOLTAGE : VR(V)
VR-PR CHARACTERISTICS AMBIENT TEMPERATURE : Ta(C)
Derating Curve"(Io-Ta)
AVERAGE RECTI F I ED
FORWARD CURRENT : Io(A)
AVERAGE RECTI F I ED
FORWARD CURRENT : Io(A)
CASE TEMPARATURE : Tc(C)
Derating Curve"(Io-Tc)
Sin(=180)
Sin(=180)
DC
D=1/2 TTj=150C
D=t/T
tVR
Io
VR=20V
0A
0V
Sin(=180)
DC
D=1/2
0
5
10
15
20
25
30
C=200pF
R=0
C=100pF
R=1.5k
AVE : 7.3kV
No break at 30kV
ELECTROSTATIC
DISCHAR GE T EST ESD (KV)
ESD DISPERSION MAP
TTj=150C
tVR
Io
VR=20V
0A
0V
D/t/T
DC
D=1/2
3/3 2010.08 - Rev.B
R1010
A
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© 2010 ROHM Co., Ltd. All rights reserved.
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