HP8K24
30V Nch+Nch Middle Power MOSFET Datasheet
llOutline
Symbol Tr1:Nch Tr2:Nch
VDSS 30V 30V
RDS(on)(Max.) 8.8mΩ 3.0mΩ HSOP8
ID±27A ±80A
PD22W 31W
llFeatures ll Inner circuit
1) Low on - resistance.
2) Pb-free lead plating ; RoHS compliant.
3) Halogen Free.
llPackaging specifications
Type
Packing Embossed
Tape
llApplication Reel size (mm) 330
Switching Tape width (mm) 12
DC/DC Converter Basic ordering unit (pcs) 2500
Taping code TB
Marking HP8K24
llAbsolute maximum ratings (Ta = 25°C ,unless otherwise specified)
Parameter Symbol Value Unit
Tr1:Nch Tr2:Nch
Drain - Source voltage VDSS 30 30 V
Continuous drain current ID*1 ±27 ±80 A
ID±15 ±26 A
Pulsed drain current IDP*2 ±60 ±80 A
Gate - Source voltage VGSS ±20 ±20 V
Avalanche current, single pulse IAS*3 15 26 A
Avalanche energy, single pulse EAS*3 16.5 51.2 mJ
Power dissipation element PD*1 22 31 W
total PD*4 3.0 W
Junction temperature Tj150 ℃
Operating junction and storage temperature range Tstg -55 to +150 ℃
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© 2016 ROHM Co., Ltd. All rights reserved. 1/16 20160627 - Rev.001
HP8K24 Datasheet
llThermal resistance
Parameter Symbol Values Unit
Min. Typ. Max.
Thermal resistance, junction - case Tr1:Nch RthJC*1 - - 5.6 ℃/W
Tr2:Nch RthJC*1 - - 4.0 ℃/W
Thermal resistance, junction - ambient total RthJA
*4 - - 41.7 ℃/W
llElectrical characteristics (Ta = 25°C)
Parameter Symbol Type Conditions Values Unit
Min. Typ. Max.
Drain - Source breakdown
voltage V(BR)DSS
Tr1 VGS = 0V, ID = 1mA 30 - - V
Tr2 VGS = 0V, ID = 1mA 30 - -
Breakdown voltage
temperature coefficient
ΔV(BR)DSS
Tr1 ID = 1mA, referenced to 25℃- 28 - mV/℃
ΔTj Tr2 ID = 1mA, referenced to 25℃- 28 -
Zero gate voltage
drain current IDSS
Tr1 VDS = 24V, VGS = 0V - - 1 μA
Tr2 VDS = 24V, VGS = 0V - - 1
Gate - Source
leakage current IGSS
Tr1 VDS = 0V, VGS = ±20V - - ±100 nA
Tr2 VDS = 0V, VGS = ±20V - - ±100
Gate threshold
voltage VGS(th)
Tr1 VDS = VGS, ID = 1mA 1.3 - 2.5
V
Tr2 VDS = VGS, ID = 1mA 1.3 - 2.5
Gate threshold voltage
temperature coefficient
ΔVGS(th) Tr1 ID = 1mA, referenced to 25℃- -3.87 - mV/℃
ΔTj Tr2 ID = 1mA, referenced to 25℃- -3.87 -
Static drain - source
on - state resistance RDS(on)*5
Tr1 VGS = 10V, ID = 15A - 6.7 8.8
mΩ
VGS = 4.5V, ID = 15A - 9.1 13.3
Tr2 VGS = 10V, ID = 26A - 2.3 3.0
VGS = 4.5V, ID = 26A - 3.2 4.2
Gate resistance RG
Tr1 f=1MHz, open drain 1.15 2.3 4.6 Ω
Tr2 0.6 1.1 2.2
Forward Transfer
Admittance |Yfs|*5 Tr1 VDS = 5V, ID = 15A 10 - - S
Tr2 VDS = 5V, ID = 26A 27 - -
*1Tc=25℃, Limited only by maximum temperature allowed.
*2 Pw ≦ 10μs, Duty cycle ≦ 1%
*3 L ⋍ 0.1mH, VDD = 15V, RG = 25Ω, Starting Tj = 25℃ Fig.3-1,3-2
*4 Mounted on a Cu board (40×40×0.8mm)
*5 Pulsed
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© 2016 ROHM Co., Ltd. All rights reserved. 2/16 20160627 - Rev.001
HP8K24 Datasheet
llElectrical characteristics (Ta = 25°C)
<Tr1>
Parameter Symbol Conditions Values Unit
Min. Typ. Max.
Input capacitance Ciss VGS = 0V - 590 -
pFOutput capacitance Coss VDS = 15V - 160 -
Reverse transfer capacitance Crss f = 1MHz - 44 -
Turn - on delay time td(on)*5 VDD ⋍ 15V, VGS = 10V - 9.6 -
ns
Rise time tr*5 ID = 7.5A - 4.5 -
Turn - off delay time td(off)*5 RL = 2.0Ω - 25.5 -
Fall time tf*5 RG = 10Ω - 3.4 -
<Tr2>
Parameter Symbol Conditions Values Unit
Min. Typ. Max.
Input capacitance Ciss VGS = 0V - 2140 -
pFOutput capacitance Coss VDS = 15V - 510 -
Reverse transfer capacitance Crss f = 1MHz - 155 -
Turn - on delay time td(on)*5 VDD ⋍ 15V, VGS = 10V - 20.0 -
ns
Rise time tr*5 ID = 13A - 12.0 -
Turn - off delay time td(off)*5 RL = 1.15Ω - 59.0 -
Fall time tf*5 RG = 10Ω - 19.0 -
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© 2016 ROHM Co., Ltd. All rights reserved. 3/16 20160627 - Rev.001
HP8K24 Datasheet
llGate charge characteristics (Ta = 25°C)
<Tr1>
Parameter Symbol Conditions Values Unit
Min. Typ. Max.
Total gate charge Qg*5
VDD ⋍ 15V
ID = 15A
VGS = 10V - 10.0 -
nC
VGS = 4.5V
- 4.8 -
Gate - Source charge Qgs*5 - 2.3 -
Gate - Drain charge Qgd*5 - 1.1 -
<Tr2>
Parameter Symbol Conditions Values Unit
Min. Typ. Max.
Total gate charge Qg*5
VDD ⋍ 15V
ID = 26A
VGS = 10V - 36.0 -
nC
VGS = 4.5V
- 17.2 -
Gate - Source charge Qgs*5 - 7.5 -
Gate - Drain charge Qgd*5 - 4.7 -
llBody diode electrical characteristics (Source-Drain) (Ta = 25°C)
<Tr1>
Parameter Symbol Conditions Values Unit
Min. Typ. Max.
Continuous forward current IS Ta = 25℃- - 2.5
A
Pulse forward current ISP*2 - - 60
Forward voltage VSD*5 VGS = 0V, IS = 2.5A - - 1.2 V
Reverse recovery time trr*5 IS = 15A, VGS = 0V
di/dt = 100A/μs
- 21.4 - ns
Reverse recovery charge Qrr*5 - 11.8 - nC
<Tr2>
Parameter Symbol Conditions Values Unit
Min. Typ. Max.
Continuous forward current IS Ta = 25℃- - 2.5
A
Pulse forward current ISP*2 - - 80
Forward voltage VSD*5 VGS = 0V, IS = 2.5A - - 1.2 V
Reverse recovery time trr*5 IS = 26A, VGS = 0V
di/dt = 100A/μs
- 32.0 - ns
Reverse recovery charge Qrr*5 - 26.0 - nC
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© 2016 ROHM Co., Ltd. All rights reserved. 4/16 20160627 - Rev.001
HP8K24 Datasheet
llElectrical characteristic curves <Tr1>
Fig.1 Power Dissipation Derating Curve Fig.2 Maximum Safe Operating Area
Fig.3 Normalized Transient Thermal
Resistance vs. Pulse Width
Fig.4 Single Pulse Maximum Power
dissipation
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© 2016 ROHM Co., Ltd. All rights reserved. 5/16 20160627 - Rev.001
HP8K24 Datasheet
llElectrical characteristic curves <Tr1>
Fig.5 Typical Output Characteristics(I) Fig.6 Typical Output Characteristics(II)
Fig.7 Breakdown Voltage vs. Junction
Temperature
Fig.8 Typical Transfer Characteristics
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© 2016 ROHM Co., Ltd. All rights reserved. 6/16 20160627 - Rev.001
HP8K24 Datasheet
llElectrical characteristic curves <Tr1>
Fig.9 Gate Threshold Voltage vs. Junction
Temperature
Fig.10 Forward Transfer Admittance vs.
Drain Current
Fig.11 Drain Current Derating Curve Fig.12 Static Drain - Source On - State
Resistance vs. Gate Source Voltage
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© 2016 ROHM Co., Ltd. All rights reserved. 7/16 20160627 - Rev.001
HP8K24 Datasheet
llElectrical characteristic curves <Tr1>
Fig.13 Static Drain - Source On - State
Resistance vs. Junction Temperature
Fig.14 Static Drain - Source On - State
Resistance vs. Drain Current(I)
Fig.15 Static Drain - Source On - State
Resistance vs. Drain Current(II)
Fig.16 Static Drain - Source On - State
Resistance vs. Drain Current(III)
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© 2016 ROHM Co., Ltd. All rights reserved. 8/16 20160627 - Rev.001
HP8K24 Datasheet
llElectrical characteristic curves <Tr1>
Fig.17 Typical Capacitance vs. Drain -
Source Voltage
Fig.18 Switching Characteristics
Fig.19 Dynamic Input Characteristics Fig.20 Source Current vs. Source Drain
Voltage
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© 2016 ROHM Co., Ltd. All rights reserved. 9/16 20160627 - Rev.001
HP8K24 Datasheet
llElectrical characteristic curves <Tr2>
Fig.1 Power Dissipation Derating Curve Fig.2 Maximum Safe Operating Area
Fig.3 Normalized Transient Thermal
Resistance vs. Pulse Width
Fig.4 Single Pulse Maximum Power
dissipation
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© 2016 ROHM Co., Ltd. All rights reserved. 10/16 20160627 - Rev.001
HP8K24 Datasheet
llElectrical characteristic curves <Tr2>
Fig.5 Typical Output Characteristics(I) Fig.6 Typical Output Characteristics(II)
Fig.7 Breakdown Voltage vs. Junction
Temperature
Fig.8 Typical Transfer Characteristics
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© 2016 ROHM Co., Ltd. All rights reserved. 11/16 20160627 - Rev.001
HP8K24 Datasheet
llElectrical characteristic curves <Tr2>
Fig.9 Gate Threshold Voltage vs. Junction
Temperature
Fig.10 Forward Transfer Admittance vs.
Drain Current
Fig.11 Drain Current Derating Curve Fig.12 Static Drain - Source On - State
Resistance vs. Gate Source Voltage
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© 2016 ROHM Co., Ltd. All rights reserved. 12/16 20160627 - Rev.001
HP8K24 Datasheet
llElectrical characteristic curves <Tr2>
Fig.13 Static Drain - Source On - State
Resistance vs. Junction Temperature
Fig.14 Static Drain - Source On - State
Resistance vs. Drain Current(I)
Fig.15 Static Drain - Source On - State
Resistance vs. Drain Current(II)
Fig.16 Static Drain - Source On - State
Resistance vs. Drain Current(III)
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© 2016 ROHM Co., Ltd. All rights reserved. 13/16 20160627 - Rev.001
HP8K24 Datasheet
llElectrical characteristic curves <Tr2>
Fig.17 Typical Capacitance vs. Drain -
Source Voltage
Fig.18 Switching Characteristics
Fig.19 Dynamic Input Characteristics Fig.20 Source Current vs. Source Drain
Voltage
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© 2016 ROHM Co., Ltd. All rights reserved. 14/16 20160627 - Rev.001
HP8K24 Datasheet
llMeasurement circuits <It is the same for the Tr1 and Tr2>
Fig.1-1 Switching Time Measurement Circuit Fig.1-2 Switching Waveforms
Fig.2-1 Gate Charge Measurement Circuit Fig.2-2 Gate Charge Waveform
Fig.3-1 Avalanche Measurement Circuit Fig.3-2 Avalanche Waveform
llNotice
This product might cause chip aging and breakdown under the large electrified environment.
Please consider to design ESD protection circuit.
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© 2016 ROHM Co., Ltd. All rights reserved. 15/16 20160627 - Rev.001
HP8K24 Datasheet
llDimensions
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© 2016 ROHM Co., Ltd. All rights reserved. 16/16 20160627 - Rev.001
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© 2015 ROHM Co., Ltd. All rights reserved.
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