VS-ST230SPbF Series
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Phase Control Thyristors
(Stud Version), 230 A
FEATURES
• Center amplifying gate
• International standard case TO-209AB (TO-93)
• Hermetic metal case with ceramic insulator
(Also available with glass-metal seal up to
1200 V)
• Compression bonded encapsulation for heavy duty
operations such as severe thermal cycling
• Designed and qualified for industrial level
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
• DC motor controls
• Controlled DC power supplies
• AC controllers
ELECTRICAL SPECIFICATIONS
PRODUCT SUMMARY
IT(AV) 230 A
VDRM/VRRM 400 V, 1600 V
VTM 1.55 V
IGT 150 mA
TJ-40 °C to 125 °C
Package TO-209AB (TO-93)
Diode variation Single SCR
TO-209AB (TO-93)
MAJOR RATINGS AND CHARACTERISTICS
PARAMETER TEST CONDITIONS VALUES UNITS
IT(AV)
230 A
TC85 °C
IT(RMS) 360 A
ITSM
50 Hz 5700 A
60 Hz 5970
I2t50 Hz 163 kA2s
60 Hz 149
VDRM/VRRM 400 to 1600 V
tqTypical 100 μs
TJ-40 to 125 °C
VOLTAGE RATINGS
TYPE NUMBER VOLTAGE
CODE
VDRM/VRRM, MAXIMUM REPETITIVE
PEAK AND OFF-STATE VOLTAGE
V
VRSM, MAXIMUM
NON-REPETITIVE PEAK VOLTAGE
V
IDRM/IRRM MAXIMUM AT
TJ = TJ MAXIMUM
mA
VS-ST230S
04 400 500
30
08 800 900
12 1200 1300
16 1600 1700
VS-ST230SPbF Series
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ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum average on-state current
at case temperature IT(AV) 180° conduction, half sine wave 230 A
85 °C
Maximum RMS on-state current IT(RMS) DC at 78 °C case temperature 360
A
Maximum peak, one-cycle
non-repetitive surge current ITSM
t = 10 ms No voltage
reapplied
Sinusoidal half wave,
initial TJ = TJ maximum
5700
t = 8.3 ms 5970
t = 10 ms 100 % VRRM
reapplied
4800
t = 8.3 ms 5000
Maximum I2t for fusing I2t
t = 10 ms No voltage
reapplied
163
kA2s
t = 8.3 ms 148
t = 10 ms 100 % VRRM
reapplied
115
t = 8.3 ms 105
Maximum I2t for fusing I2t t = 0.1 to 10 ms, no voltage reapplied 1630 kA2s
Low level value of threshold voltage VT(TO)1 (16.7 % x x IT(AV) < I < x IT(AV)), TJ = TJ maximum 0.92 V
High level value of threshold voltage VT(TO)2 (I > x IT(AV)), TJ = TJ maximum 0.98
Low level value of on-state slope resistance rt1 (16.7 % x x IT(AV) < I < x IT(AV)), TJ = TJ maximum 0.88 m
High level value of on-state slope resistance rt2 (I > x IT(AV)), TJ = TJ maximum 0.81
Maximum on-state voltage VTM Ipk = 720 A, TJ = TJ maximum, tp = 10 ms sine pulse 1.55 V
Maximum holding current IHTJ = 25 °C, anode supply 12 V resistive load 600 mA
Maximum (typical) latching current IL1000 (300)
SWITCHING
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum non-repetitive rate of rise
of turned-on current dI/dt Gate drive 20 V, 20 , tr 1 μs
TJ = TJ maximum, anode voltage 80 % VDRM
1000 A/μs
Typical delay time td
Gate current 1 A, dIg/dt = 1 A/μs
Vd = 0.67 % VDRM, TJ = 25 °C 1.0
μs
Typical turn-off time tq
ITM = 300 A, TJ = TJ maximum, dIF/dt = 20 A/μs,
VR = 50 V, dV/dt = 20 V/μs, gate 0 V 100 , tp = 500 μs 100
BLOCKING
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum critical rate of rise
of off-state voltage dV/dt TJ = TJ maximum linear to 80 % rated VDRM 500 V/μs
Maximum peak reverse and
off-state leakage current
IRRM,
IDRM
TJ = TJ maximum, rated VDRM/VRRM applied 30 mA
VS-ST230SPbF Series
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Note
• The table above shows the increment of thermal resistance RthJC when devices operate at different conduction angles than DC
TRIGGERING
PARAMETER SYMBOL TEST CONDITIONS
VALUES UNITS
TYP. MAX.
Maximum peak gate power PGM TJ = TJ maximum, tp 5 ms 10.0 W
Maximum average gate power PG(AV) TJ = TJ maximum, f = 50 Hz, d% = 50 2.0
Maximum peak positive gate current IGM TJ = TJ maximum, tp 5 ms 3.0 A
Maximum peak positive gate voltage + VGM TJ = TJ maximum, tp 5 ms 20 V
Maximum peak negative gate voltage - VGM 5.0
DC gate current required to trigger IGT
TJ = - 40 °C
Maximum required gate trigger/
current/voltage are the lowest
value which will trigger all units 12
V anode to cathode applied
180 -
TJ = 25 °C 90 150 mA
TJ = 125 °C 40 -
DC gate voltage required to trigger VGT
TJ = - 40 °C 2.9 -
VTJ = 25 °C 1.8 3.0
TJ = 125 °C 1.2 -
DC gate current not to trigger IGD
TJ = TJ maximum
Maximum gate current/voltage not
to trigger is the maximum value
which will not trigger any unit with
rated VDRM anode to cathode
applied
10 mA
DC gate voltage not to trigger VGD 0.25 V
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum operating junction
temperature range TJ-40 to 125 °C
Maximum storage temperature range TStg -40 to 150
Maximum thermal resistance,
junction to case RthJC DC operation 0.10
K/W
Maximum thermal resistance,
case to heatsink RthC-hs Mounting surface, smooth, flat and greased 0.04
Mounting torque, ± 10 %
Non-lubricated threads 31
(275) N · m
(lbf in)
Lubricated threads 24.5
(210)
Approximate weight 280 g
Case style See dimensions - link at the end of datasheet TO-209AB (TO-93)
RthJC CONDUCTION
CONDUCTION ANGLE SINUSOIDAL CONDUCTION RECTANGULAR CONDUCTION TEST CONDITIONS UNITS
180° 0.016 0.012
TJ = TJ maximum K/W
120° 0.019 0.020
90° 0.025 0.027
60° 0.036 0.037
30° 0.060 0.060
VS-ST230SPbF Series
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Fig. 1 - Current Ratings Characteristics Fig. 2 - Current Ratings Characteristics
Fig. 3 - On-State Power Loss Characteristics
Fig. 4 - On-State Power Loss Characteristics
80
90
100
110
120
130
Maximum Allowable Case Temperature (°C)
30° 60° 90° 120°
180°
Average On-State Current (A)
Conduction Angle
ST230S Series
RthJC (DC) = 0.1 K/W
Ø
0 50 100 150 200 250
70
80
90
100
110
120
130
0 100 200 300 400
DC
30° 60° 90°
120° 180°
Average On-State Current (A)
Maximum Allowable Case Temperature (°C)
Conduction Period
ST230S Series
RthJC (DC) = 0.1 K/W
Ø
50 75 100 125
Maximum Allowable Ambient Temperature (°C)
R=0.8 K/W - Delta R
thSA
0.1K/W
0.16K/W
0.2K/W
0.3K/W
0.4K/W
0.5K/W
0.8K/W
1.2 K/W
0
50
100
150
200
250
300
350
0 50 100 150 200 250
180°
120°
90°
60°
30°
RMS Limit
Conduction Angle
Maximum Average On-State Power Loss (W)
Average On-State Current (A)
ST230S Series
T = 125 °C
J
Ø
50 75 100 125
Maximum Allowable Ambient Temperature (°C)
R
=0.08 K/W - Delta R
thSA
0.1K/W
0.16K/W
0.2K/W
0.3K/W
0.4K/W
0.5K/W
0.8 K/W
1.2K/W
0
50
100
150
200
250
300
350
400
450
0 50 100 150 200 250 300 350 400
DC
180°
120°
90°
60°
30°
RMS Limit
Conduction Period
Maximum Average On-State Power Loss (W)
Average On-State Current (A)
ST230S Series
T = 125 °C
J
Ø
VS-ST230SPbF Series
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Fig. 5 - Maximum Non-Repetitive Surge Current Fig. 6 - Maximum Non-Repetitive Surge Current
Fig. 7 - On-State Voltage Drop Characteristics
Fig. 8 - Thermal Impedance ZthJC Characteristics
2000
2500
3000
3500
4000
4500
5000
5500
1 10 100
Number Of Equal Amplitude
Half Cycle Current Pulses (N)
Peak Half Sine Wave On-State Current (A)
Initial TJ = 125 °C
at 60 Hz 0.0083 s
at 50 Hz 0.0100 s
ST230S Series
At Any Rated Load Condition And With
Rated VRRM Applied Following Surge.
2000
2500
3000
3500
4000
4500
5000
5500
6000
0.01 0.1 1
Pulse Train Duration (s)
Peak Half Sine Wave On-State Current (A)
Initial TJ = 125 °C
No Voltage Reapplied
Rated VRRM Reapplied
ST230S Series
Maximum Non Repetitive Surge Current
vs. Pulse Drain Duration.
Control of Conduction May Not Be Maintained
Instantaneous On-State Voltage (V)
Instantaneous On-State Current (A)
10
100
1000
10 000
0.5 1.5 2.5 3.5 4.5
TJ = 25 °C
ST230S Series
TJ = 125 °C
0.001
0.01
0.1
1
0.001 0.01 0.1 1 10
Square Wave Pulse Duration (s)
Transient Thermal Impedance ZthJC (K/W)
ST230S Series
Steady State Value
RthJC = 0.1 K/W
(DC Operation)
VS-ST230SPbF Series
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Fig. 9 - Gate Characteristics
ORDERING INFORMATION TABLE
0.1
1
10
100
0.001 0.01 0.1 1 10 100
VGD
IGD
(b)
(a)
TJ =25 °C
TJ =125 °C
TJ =-40 °C
(1) (2) (3)
Instantaneous Gate Current (A)
Instantaneous Gate Voltage (V)
a) Recommended load line for
b) Recommended load line for
< = 30 % rated dIF/dt : 10 V, 10 Ω
Frequency Limited by PG (AV)
rated dIF/dt : 20 V, 10 Ω; tr <=1 μs
tr < = 1 μs
(1) PGM = 10 W, tp = 4 ms
(2) PGM = 20 W, tp = 2 ms
(3) PGM = 40 W, tp = 1 ms
(4) PGM = 60 W, tp = 0.66 ms
Device: ST230S Series
Rectangular gate pulse
(4)
1
- Vishay Semiconductors product
- Thyristor
2
- Essential part number
3
- 0 = Converter grade
4
9
10
- None = Standard production
- PbF = Lead (Pb)-free
- S = Compression bonding stud
5
- Voltage code x 100 = VRRM (see Voltage Ratings table)
6
- P = Stud base 3/4"-16UNF2A threads
7
- 0 = Eyelet terminals (gate and auxiliary cathode leads)
1 = Fast-on terminals (gate and auxiliary cathode leads)
8
-
None = Ceramic housing (over 1200 V)
V = Glass-metal seal (only up to 1200 V)
Note: For metric device M16 x 1.5 contact factory
Device code
51 32 4 6 7 8 9 10
STVS- 23 0 S 16 P 0 V PbF
LINKS TO RELATED DOCUMENTS
Dimensions www.vishay.com/doc?95082
Outline Dimensions
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TO-209AB (TO-93)
DIMENSIONS in millimeters (inches)
Note
(1) For metric device: M16 x 1.5 - length 21 (0.83) maximum
Fast-on terminals
White shrink
Red shrink
Red cathode
Red silicon rubber
210 (8.26) ± 10 (0.39)
C.S. 0.4 mm2
(0.0006 s.i.)
90 (3.54) MIN.
4.3 (0.17) DIA.
19 (0.75) MAX.
38.5 (1.52)
MAX.
16 (0.63) MAX.
8.5 (0.33) DIA.
Glass metal seal
28.5 (1.12) MAX. DIA.
220 (8.66) ± 10 (0.39)
SW 32
C.S. 25 mm2
(0.039 s.i.)
Flexible leads
4 (0.16) MAX.
35 (1.38) MAX.
3/4"-16UNF-2A (1)
27.5 (1.08) MAX.
White gate
White shrink
Red shrink
Red cathode
Red silicon rubber
210 (8.26) ± 10 (0.39)
C.S. 0.4 mm2
(0.006 s.i.)
38.5 (1.52)
MAX.
220 (8.66) ± 10 (0.39)
Ceramic housing
90 (3.54) MIN.
4.3 (0.17) DIA.
19 (0.75) MAX.
8.5 (0.33) DIA.
35 (1.38) MAX.
3/4"-16UNF-2A (1)
27.5 (1.08) MAX. SW 32
27.5 (1.08) MAX. DIA.
White gate
16 (0.63) MAX.
AMP. 280000-1
REF-250
9.5 (0.37) MIN.
22 (0.86) MIN.
C.S. 25 mm2
(0.039 s.i.)
Flexible leads
4 (0.16) MAX.
9.5 (0.37) MIN.
22 (0.86) MIN.
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