CLL3595
SURFACE MOUNT
LOW LEAKAGE SILICON DIODE DESCRIPTION:
The CENTRAL SEMICONDUCTOR CLL3595 type
is an epitaxial planar silicon diode, manufactured in
a hermetically sealed glass surface mount package,
designed for low leakage, high conductance
applications.
MARKING: CATHODE BAND
MAXIMUM RATINGS: (TA=25°C) SYMBOL UNITS
Peak Repetitive Reverse Voltage VRRM 150 V
Peak Working Reverse Voltage VRWM 125 V
Average Forward Current IO 150 mA
Forward Steady-State Current IF 225 mA
Recurrent Peak Forward Current if 600 mA
Peak Forward Surge Current (1.0s pulse) IFSM 500 mA
Peak Forward Surge Current (1.0μs pulse) IFSM 4.0 A
Power Dissipation PD 500 mW
Operating and Storage Junction Temperature TJ, Tstg -65 to +200 °C
Thermal Resistance ΘJA 350 °C/W
ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted)
SYMBOL TEST CONDITIONS MIN MAX UNITS
IR V
R=125V 1.0 nA
IR V
R=125V, TA=125°C 500 nA
IR V
R=125V, TA=150°C 3.0 μA
IR V
R=30V, TA=125°C 300 nA
BVR I
R=100μA 150 V
VF I
F=1.0mA 0.54 0.69 V
VF I
F=5.0mA 0.62 0.77 V
VF I
F=10mA 0.65 0.80 V
VF I
F=50mA 0.75 0.88 V
VF I
F=100mA 0.79 0.92 V
VF I
F=200mA 0.834 1.00 V
CT V
R=0, f=1.0MHz 8.0 pF
trr V
R=3.5V, If=10mA, RL=1.0kΩ 3.0 μs
SOD-80 CASE
R4 (8-January 2010)
www.centralsemi.com
CLL3595
SURFACE MOUNT
LOW LEAKAGE SILICON DIODE
SOD-80 CASE - MECHANICAL OUTLINE
MARKING: CATHODE BAND
www.centralsemi.com
R4 (8-January 2010)
