INTEGRATED CIRCUITS DATA SEE TDA8580 Multi-purpose power amplifier Preliminary specification 1996 Jan 04 File under Integrated Circuits, |CO1 Philips Semiconductors PHILIPSPhilips Semiconductors Preliminary specification errr rere errr reer Multi-purpose power amplifier TDA8580 meee eee eee eee FEATURES GENERAL DESCRIPTION General The TDA8580 is a stereo bridge-tied load (BTL) or a quad single-ended amplifier that operates over a wide supply voltage range from 5 ta 32 V and consumes a very low * Very low quiescen: current quiescent current. This makes it suitable for many * Dynamic quiescent current control applications, such as battery fed applications, car radios, television and hame-sound systems. Operating voltage from 5 to 32 V Low distortion * Few external components, fixed again Because of an internal voltage buffer, this device can be used with, or without, a capacitor connected in series with the load (SE application). A combined BTL and 2 x SE * Can be used as a stereo amplifier in bridge-tied load application can also be configured. (BTL) or quad single-ended (SE) amplifiers High output power Single-ended mode without loudspeaker capacitor * Mute and standby mode with one or two pin operation (at low supply voltage only two pin operation) Diagnostic information for Dynamic Distortion Detector (DDD), thermal protection and short-circuit + No switch on/off plops when switching between standby to mute and from mute to on Low offset variation at outputs between mute and on Fast mute on supply voltage drops. Protection Reverse polarity safe (down to -18 V without high reverse current) Able to withstand voltages up to 18 V at the outputs (positive supply line can be connected to ground) Short-circuit proof to ground, positive supply voliage on all pins and across load ESD protected on all pins Thermal protection over 150C * Load dump protection * Protected against open-circuit ground pins and output short-circuited to supply ground. ORDERING INFORMATION TYPE PACKAGE NUMBER NAME DESCRIPTION VERSION TDA8580 DBS17P | plastic DIL-bent-SIL power package; 17 leads (lead length 12 mm) SOT243-1 1996 Jan 04 2Philips Semiconductors Preliminary specification Multi-purpose power amplifier TDA8580 QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT Vp operating supply voltage 5.0 - 32 Vv lgttot) total quiescent current Vp=14.4V - 15 30 mA sth standby supply current Vp=14.4V - 1 50 LA Gy closed loop voltage gain single-ended 25 26 27 dB bridge-tied load 31 32 33 dB Single-ended application Py output power THD = 0.5%; Vp = 14.4 V; - 5 - Ww RL=4Q THD = 0.5%; Vp = 32 V; - 25 - Ww R, =40 Vos DC output offset voltage Vp = 14.4 V; mute - - 20 mV Vp = 14.4 Vion - - 50 mv Vno noise output voliage single-ended; R, =0 9 - 70 100 nV SVRR supply voltage ripple rejection | on and mute 50 - - dB Bridge-tied load application Py output power THD = 0.5%; Vp = 14.4 V; - 17 - W Rp =40 THD = 0.5%; Vp = 32 V; - A0 - WwW RL =8Q THD total harmonic distortion f,= 1 kHz; Pp= 1 W; - 0.05 = % Vp = 14.4 V; RL -80 f= 1 kHz; Pp = 20 W; - 0.05 - %o Vp =82V;R_=82 Vos DC output offset voltage Vp = 14.4 V; mute - - 20 mV Vp = 14.4 V; on - - 60 mV Vno noise output voltage single-ended; Rg = 0 - 100 150 pV SVRR supply voltage ripple rejection | on and mute 55 - - dB 1996 Jan 04Philips Semiconductors Preliminary specification Multi-purpose power amplifier TDA8580 BLOCK DIAGRAM Vp1 Vp2 | [3/15 ints |" TDA8580 . p OUT T+ Inez {8 te a OUT2- 1 45 kd Vx Vox 45 60 ka Ka PN 9 } BUFFER BUFFER 45 ocr ka 45 ko an 14 OA |__ QUT3+ IN3+ 10 i + . + IN5- PN 17 oe > OUT4+ IN4+ Ny 45 ko 13 MUTE > 6 5 INTERFACE DIAGNOSTIG DIAG STANDBY lz |t6 | | MGEOt0 PGND1 PGND2 Fig.1 Block diagram. 1996 Jan 04 4Philips Semiconductors Preliminary specification Multi-purpose power amplifier TDA8580 PINNING SYMBOL PIN DESCRIPTION OUT1+ 1 non-inverting output 1 PGND1 2 | power ground 1 ourt+ [1 Vpq 3 supply voltage 1 penpt [2] OUT2- 4 inverting output 2 Vp1 STANDBY 5 standby/mute/on oure- DIAG 6 diagnostic STANDBY [5 IN1T+ 7 non-inverting input 1 ; __ DIAG [6 IN2+ 8 inverting input 2 BUFFER 9 | buffer output Nt Le (single-ended output buffer} IN2+ [8 IN3+ 10 inverting input 3 BUFFER |9] TDA8S80 IN44 11 non-inverting input 4 Nae [ro] IN5 12 inverting input 5; signal ground nae [a MUTE 13 | mute/on OUT3- 14 | inverting output 3 ne [2 Vp2 15 | supply voltage 2 Mure [13 PGND2 16 | power ground 2 ours [14] OUT4+ 17 | non-inverting output 4 Vpo [5] Panne [16] oura+ [17] 1996 Jan 04 MGE009 Fig.2 Pin configuration.Philips Semiconductors Preliminary specification Multi-purpose power amplifier TDA8580 FUNCTIONAL DESCRIPTION The TDA8580 is a multi-purpose power amplifier with four independent amplifiers which can be connected in the following configurations with high output power and low distortion (at minimum quiescent current); 1. 2. 3. Dual bridge-tied load (BTL) amplifiers. Quad single-ended amplifiers. Dual single-ended amplifiers and one bridge-tied load amplifier. The amplifier can be switched on (play or mute) and off (standby) by a dual mute standby pin (for interfacing directly with a microcontroller). One pin operation is also possible by applying a voltage greater than 7 V to the standby/mute/on pin. Special attention is given to the dynamic behaviour as follows; 1. Noise suppression during engine start. 2. No plops when switching from standby to on. 3. Slow offset change between muie and on (controlled by mute/standby circuit). 4. Low noise levels, which are independant of the supply voltage. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). Protections are included to avoid the IC being damaged at; 1. 2. 6. Over temperature T > 150 C. Short-circuit of the oulput pin(s) to ground or supply rail. When shorted, the power dissipation is limited. A maximum current limiter which limits the maximum ouiput current to 4 A. During this limiting action the load resistance is measured and when the load is less than 1, the amplifier is switched off (every 20 ms the IC tries to restart). The dissipation will be minimized because of a low duty-cycle. The chip temperature is protected by the temperature protection. ESD protection (human body 3000 V and machine model 300 V). Energy handling. A DC voltage of 18 V can be connected to the output of any amplifier while the supply pins are shorted to ground. No high DC current will flow from the supply pins of the amplifier. Reverse batiery to avaid a high current flowing. Diagnostics are available for the following conditions (see Figs 5 to 8). wh > Amplifier in MUTE. Chip temperature greater than 135 C. Distortion over 10% due to clipping. Short-circuit protection active. SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT Vp supply voltage operating 5 32 V non-operating -18 - Vv load dump protecied; - 50 Vv see Fig.3 Vola voltage on diagnostic pin - 18 Vv losm peak output current non-repetitive - 6 A lonm peak output current repetitive - 45 A Vrev reverse polarity voltage - 18 V Vso AC and DC short-circuit voltage of output - 32 Vv pins across loads and to ground/supply Prot total power dissipation - 75 w Tj junction temperature - 150 C Tstg storage temperature 55 +150 C Tamb operating ambient temperature -4A0 - C 1996 Jan 04 6Philips Semiconductors Preliminary specification Multi-purpose power amplifier TDA8580 THERMAL CHARACTERISTICS SYMBOL PARAMETER VALUE UNIT Rth j-a thermal resistance from junction to ambient in free air 40 K/W Rth je thermal resistance from junction to case 1.5 KAW QUALITY SPECIFICATION In accordance with "SNW -FQ-611 part E", if this type is used as an audio amplifier. The numbers of the quality specification can be found in the "Quality Reference Handbook. The handbook can be ordered using the code 9398 510 630 11. CHARACTERISTICS Vp = 14.4 V; Tambp = 25C; ff = 1 kHz; R_ = ; measured in test circuit of Fig.9; unless otherwise specified). SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT Supply Vp operating supply voltage 5.0 14.4 32 V lgttot) total quiescent current - 15 30 mA Isth standby current - 1 50 BA Vo DC output voltage Vp=14.4V - 7.0 - V Vew low supply voltage switch off | see Fig.4 2.7 3.1 3.5 V Voom low supply voltage mute 6.0 7.0 8.0 Vv Vos single-ended offset voltage Vp= 14.4 V; 0n - 0 50 mv Vos bridge-tied load offset voliage | Vp = 14.4 V; on - 0 60 mv Vo single-ended and bridge-tied | Vp = 14.4 V; mute - - 20 mv load output voltage Vi DC input voltage Vp=14.4V - 4.0 - Vv STANDBY, MUTE AND ON (see Table 1} V5 standby condition 0 - 0.8 Vv Vs standby hysteresis note 1 - 0.2 - Vv V5 mute condition Vig<1V 2.0 - 5.5 Vv V5 on condition Vig< 1 ViVp211 8.0 - 18 Vv MUTE AND ON Vig mute condition V5=5V - 1.0 V Vie on condition V5-5V 3.5 - 5.5 V Diagnostic; output buffer (open-collector); see Figs 5, 6, 7 and & VoL low level output voltage lsink = 1 mA - 0.2 0.8 Vv la leakage current Vorag = 14.4 V - - 1 HA cD clip detector Volag < 0.8 V 5 10 15 % Tjune thermal protection Voig <0.8V 185 - = C 1996 Jan 04Philips Semiconductors Preliminary specification Multi-purpose power amplifier TDA8580 SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT Stereo BTL application (see Fig.9) THD iotal harmonic distortion o- 1Wrii=1kHz;RE=40 |- 0.05 0.1 % Py = 1 W; f= 10 kHz; RL =49 |- 0.1 - % Py output power THD = 0.5%; Vp = 14.4 V; 15 17 - W RL =42 THD = 0.5%; Vp = 32 V; 37 40 - W R, =80 THD = 10%; Vp = 14.4 V; 18 21 - W R, =42 THD = 10%; Vp = 32 V; - 50 - W R, =82 Gy voltage gain 31 32 33 dB Gos channel separation AO 55 - dB | AG channel unbalance - - 1 dB Vno noise voltage 5 = 1kQ; Vp = 14.4 V3 note 2 |- 100 150 HV Vnom noise voltage mute note 2 - - 20 uv Vo output voltage mute Vi=1V (RMS) - 3 500 pV SVRR supply voltage ripple rejection | fj = 1 KHZ; Viippie = 2 Vin 55 - - dB on/mute condition; R, = 0 2 Zi input impedance 23 30 37 kQ CMRR common mode rejection ratio | ; = 1V (RMS} - 68 - dB Quad SE application (see Fig. 10) THD total harmonic distortion Po=1W;f=1kHz;RLp=40 |- 0.05 0.1 % P,= 1 W;# = 10 kHz; R, =40 |- 0.1 - % Po output power THD = 0.5%; Vp = 14.4 V; 4 5 - W RL =42 THD = 0.5%; Vp = 32 V; 21 25 - W R, =82 THD = 10%; Vp = 14.4 V; - 6 - W RL =42 THD = 10%; Vp = 32 V; 25 30 - W R, =82 Gy, voltage gain 25 26 27 dB Clog channel separation 40 A6 - dB | AG channel unbalance - - 1 dB Vno noise voltage R, = 1 kQ; Vp = 14.4 V; note 2 |- 80 120 pV Viom noise voltage mute note 2 - - 20 uv Vo output voltage mute Vin = 1 V (RMS) - 3 500 HV SVRR supply voltage ripple rejection | f = 1 KHZ} Vripple = 2 Vin 55 - - dB on/mute condition; Rs = 0 2 Zi input impedance 46 60 74 kQ CMRR common mode rejection ratio | Vj = 1 V (RMS} - 68 - dB 1996 Jan 04 8Philips Semiconductors Preliminary specification Multi-purpose power amplifier TDA8580 Notes to the characteristics 1. Hysteresis between rise and fall valtage. 2. The noise output is measured in a bandwidth of 20 Hz to 20 kHz. Table 1 = Standby/Mute and On PIN 5 PIN 13 FUNCTION <0.8 dont care standby (off) V5=2t053V Vig<1V mute (DC settled) V5=2to5V 3.5 <<53V on (AC operating) >8.0 dont care on (AC operating) MG EOS Vp MGEOT7 SOV Vp Vom 14.4V Vow 22.5 >50 t (ms) on mute off ~ i t Fig.3 Load dump voltage waveform. Fig.4 Low voltage supply behaviour. 1996 Jan 04 9Philips Semiconductors Multi-purpose power amplifier Preliminary specification TDA8580 play normal diagnostic | amplifier in mute mute mute - LL amplitier output MGE019 Fig.6 Diagnostic waveform; normal play. short-circuit overload diagnostic | | | | amplifier output \ J 1 J MGE020 Fig.6 Diagnostic waveform; short-circuit overload. play nornnal DDD U YU amplifier output nonnal diagnostic MGEO21 Fig.7 Diagnostic waveform; DDD play. short-circuit to PGND Vp diagnostic [| amplifier output | MG E022 Fig.8 Diagnostic waveform; short-circuit to GND and Vp. 1996 Jan 04 10Philips Semiconductors Preliminary specification Multi-purpose power amplifier TDA8580 APPLICATION INFORMATION Vp tLiooope Ty t" Vp2 220 nF INt4 . T r Vin OUTI+ TDA8580 + 4or8a IN2+ . - > OUT2- Vpx 60 ka PS _ 9] BUFFER BUFFER nrc 100 pF 10V i pe INS-|12_ 45 kQ T r - 14] OUTS IN3+ pa a a a+ + 4or8Q Lo 17 - On 17] outs v0 nF I IN4+ | 11 45 koh I | - +5 V 10 V, MUTE |13_ ink . 6] pac STANDBY INTERFAGE DIAGNOSTIC * Pons] i D2 MGEO1 Fig.9 Stereo bridge-tied load application. 1996 Jan 04Philips Semiconductors Preliminary specification Multi-purpose power amplifier TDA8580 Vp Vp1 | p2 3 15 220nF inte] 7. | > Ve inR 1 | OUT14+ . TDA8580 i FRONT 4or8o 220nF nas [3 - I _ 4 | OUT2- Vink Vx (( 4or8aQ + 45 ka 60 ka PN _9| BUFFER . e BUFFER 45 BUFFER tT ka + 100 WF 7 OE , [| |4or8a 10 V ' 5 kQ _ it IN5- 12 q Ik PN . 14| ouT3- e20nF ings |10_ a , I + + Vink r . 4or8Q we + 17 | OA 17 | ouT4+ REAR Le aagnk nae [11 45 ko ! _; 45 Ve int MUTE }13. ig , 6 | DIAG STANDBY |5 INTERFACE DIAGNOSTIC le |t6 Pano [Powne MGEO73 Fig.10 Quad single-ended application. 1996 Jan 04 12Philips Semiconductors Preliminary specification Multi-purpose power amplifier TDA8580 Vp +L tooopF r. t" Vea | Vp2 , 3 15 ee0nk inte] 7. T Ll Ve nm 1 | OUTI+ TDA8580 4o0r8Q IN2+ 18 . - - _ 4{ OUT2 Vix 45 ko 60 ko pS a] BUFFER , > BUFFER 45 BUFFER ko + 100 uF ? ? , 4or8a yt _|N5-]12. 45 ka - I - PN . 14] OUT3- 220 nF IN3+ | 10 OA I + Vink + 4or8Q + 17| our4s 7 [> eeonF inde 11. 75 KO . L_~4 | a5V Vint MUTE | 13 10 > 6] piag | Kk? , STANDBY 15 INTERFAGE DIAGNOSTIC le |t6 Panos] [Pon MGEO12 Fig.11 Dual single-ended and one bridge-tied load application. 1996 Jan 04 13Philips Semiconductors Preliminary specification Multi-purpose power amplifier TDA8580 INTERNAL PIN CONFIGURATION PIN NAME EQUIVALENT CIRCUIT 7, 8, 10, inputs Vp 11 and 12 IN MG EO? 4 1, 4, outputs Vp 14 and 17 a OUT 0.5 Vp MGEOIS 5 and 13 mode select Vp A MG EoT 1996 Jan 04 14Philips Semiconductors Preliminary specification Multi-purpose power amplifier TDA8580 PACKAGE OUTLINE DBS$17P: plastic DIL-bent-SIL power package; 17 leads (lead length 12 mm} $0T243-1 non-conGave Fil x view B: mounting base side d we Ap 1 B an om A I t | f | L | Q | | 1 17 EU cal aoa ~ ~ a+ [melee [ep] [ee 0 5 10mm | scale DIMENSIONS (mm are the original dimensions) UNIT | A | Ao | bp | | DM) a | oy | EM) e | ey | eo | En | L | Lbs | m a v w x | 2 17.0 | 4.6 | 0.75 | 0.48 | 24.0 | 20.0 12.2 34/124) 24 | 2.00 6 mm /455| 42 |0.60 |0.38|236|196| 1 | 1198] 254] 127 | 5.08 31} ito] 16) #3] rg] O8 | 4 | 903) 145 Note 1. Plastic or metal protrusions of 0.25 mm maximum per side are not included. OUTLINE REFERENCES EUROPEAN VERSION PROJECTION ISSUE DATE IEG JEDEC ElAd s0T243-1 =} 95-03-11 1996 Jan 04 15Philips Semiconductors Preliminary specification Multi-purpose power amplifier TDA8580 SOLDERING The device may be mounted up to the seating plane, but the temperature of the plastic body must not exceed the specified maximum storage temperature (Tsig max). If the There is no soldering method that is ideal for all IC printed-circuit board has been pre-heated, forced cooling packages. Wave soldering is often preferred when may be necessary immediately after scaldering to keep the through-hole and surface mounted components are mixed temperature within the permissible limit. on one printed-circuit board. However, wave soldering is not always suitable for surface mounted ICs, or for Repairing soldered joints printed-circuits with high population densities. In these situations reflow soldering is often used. Introduction Apply a low voltage soldering iron (less than 24 V) to the lead(s) of the package, below the seating plane or not This text gives avery brief insight te acomplex technology. = more than 2 mm above it. If the temperature of the A more in-depth account of soldering ICs can be found in soldering iron bit is less than 300 C it may remain in our"IC Package Databook" (order code 9398 652 90011). contact for up to 10 seconds. If the bit temperature is between 300 and 400 C, contact may be up to 5 seconds. Soldering by dipping or by wave The maximum permissible temperature of the solder is 260 C; solder at this temperature must not be in contact with the joint for more than 5 seconds. The total contact time of successive solder waves must not exceed 5 seconds. DEFINITIONS Data sheet status Objective specification This data sheet coniains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 184}. Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operatian of the device at these or at any ather conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, itis advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting fram such improper use or sale. 1996 Jan 04 16Philips Semiconductors Preliminary specification Multi-purpose power amplifier TDA8580 NOTES 1996 Jan 04 17Philips Semiconductors Preliminary specification Multi-purpose power amplifier TDA8580 NOTES 1996 Jan 04 18Philips Semiconductors Preliminary specification Multi-purpose power amplifier TDA8580 NOTES 1996 Jan 04 19Philips Semiconductors - a worldwide company Argentina: IEROD, Av. Juramento 1992 - 14.b, (1428) BUENOS AIRES, Tel. (541)786 7633, Fax. (541)786 9367 Australla: 34 Waterloo Road, NORTH RYDE, NSW 2113, Tel. (02)805 4455, Fax. (02)805 4466 Austria: Triester Str. 64, A-1101 WIEN, P.C. Box 213, Tel. (01)60 101-1236, Fax. (01)60 101-1211 Belgium: Postbus 90050, 5600 PB EINDHOVEN, The Netherlands, Tel. (31)40-2783749, Fax. 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(0181)754-8421 United States: 811 East Arques Avenue, SUNNYVALE, CA 94088-3409, Tel. (800)234-7381, Fax. (708)296-8556 Uruguay: Coronel Mora 433, MONTEVIDEO, Tel. (02)70-4044, Fax. (02)92 0601 Internet: http:/Awww.semicanductors.philips.com/ps For all other countries apply to: Philips Semiconductors, Intemational Marketing and Sales, Building BE-p, P.O. Box 218, 5600 MD EINDHOVEN, The Netherlands, Telex 35000 phicnl, Fax. +31-40-2724825 SCDS47 @ Philips Electronics N.V. 1996 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights Printed in The Netherlands Date of release: 1996 Jan 04 9397 750 00549 13061/1100/01/pp20 Document order number ms a = Re ee = ee he = oh te, aaa ake Bist am mae ae Baty wan soe at Liotta FP SSNE LS ESERIES Base Pe, rl Philips Semiconductors