
IRF530
IRF530FI
N - CHANNEL ENHANCEMENT MODE
POWER MOS TRANSISTOR
■TYPICALRDS(on) = 0.12 Ω
■AVALANCHERUGGEDTECHNOLOGY
■100%AVALANCHE TESTED
■REPETITIVEAVALANCHE DATA AT 100oC
■LOW GATE CHARGE
■HIGHCURRENT CAPABILITY
■175oC OPERATINGTEMPERATURE
■APPLICATIONORIENTED
CHARACTERIZATION
APPLICATIONS
■HIGHCURRENT, HIGH SPEED SWITCHING
■SOLENOID AND RELAY DRIVERS
■DC-DC& DC-AC CONVERTER
■AUTOMOTIVE ENVIRONMENT (INJECTION,
ABS, AIR-BAG, LAMP DRIVERS Etc.)
INTERNAL SCHEMATIC DIAGRAM
March 1999
TO-220 ISOWATT220
123
123
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
IRF530 IRF530FI
VDS Drain-source Voltage (VGS =0) 100 V
V
DGR Drain- gate Voltage (RGS =20kΩ)100V
V
GS Gate-source Voltage ±20 V
IDDrain Current (continuous) at Tc=25o
C1611A
I
D
Drain Current (continuous) at Tc= 100 oC117.8A
I
DM(•) Drain Current (pulsed) 64 64 A
Ptot Total Dissipation at Tc=25o
C9040W
Derating Factor 0.6 0.27 W/oC
Viso Insulation Withstand Voltage (DC) - 2000 V
Tstg Storage Temperature -65 to 175 oC
TjMax. Operating Junction Temperature 175 oC
(•) Pulse width limited by safe operating area (1)I
SD ≤16 A, di/dt
≤200 A/µs, VDD ≤V(BR)DSS,Tj≤T
JMAX
TYPE VDSS RDS(on) ID
IRF530
IRF530FI 100 V
100 V <0.16Ω
<0.16Ω16 A
11 A
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