SCH2806 Ordering number : ENN7744 SCH2806 MOSFET : N-Channel Silicon MOSFET SBD : Schottky Barrier Diode General-Purpose Switching Device Applications Features * Composite type with an N-channel silicon MOSFET (SCH1406) and a Schottky barrier diode (SBS018) contained in one package facilitating high-density mounting. [MOSFET] * Low ON-resistance. * Ultrahigh-speed switching. * 1.8V drive. [SBD] * Short reverse recovery time. * Low forward voltage. Specifications Absolute Maximum Ratings at Ta=25C Parameter Symbol Conditions Ratings Unit [MOSFET] Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) VDSS VGSS 10 V ID 1.2 A IDP PD Allowable Power Dissipation 20 V PW10s, duty cycle1% 4.8 A Mounted on a ceramic board (900mm20.8mm) 1unit 0.6 W Channel Temperature Tch 150 C Storage Temperature Tstg --55 to +125 C VRRM VRSM 15 V 15 V Average Output Current IO 0.5 A Surge Forward Current IFSM [SBD] Repetitive Peak Reverse Voltage Nonrepetitive Peak Reverse Surge Voltage 3 A Junction Temperature Tj 50Hz sine wave, 1 cycle --55 to +125 C Storage Temperature Tstg --55 to +125 C Marking : QF Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO products described or contained herein. SANYO Electric Co.,Ltd. Semiconductor Company TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 53104 TS IM TA-101080 No.7744-1/6 SCH2806 Electrical Characteristics at Ta=25C Parameter Symbol Ratings Conditions min typ Unit max [MOSFET] Drain-to-Source Breakdown Voltage V(BR)DSS ID=1mA, VGS=0 VDS=20V, VGS=0 20 Zero-Gate Voltage Drain Current IDSS Gate-to-Source Leakage Current IGSS VGS(off) VGS=8V, VDS=0 VDS=10V, ID=1mA 0.4 yfs RDS(on)1 VDS=10V, ID=1A 1.9 Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance RDS(on)2 RDS(on)3 V 1 A 10 A 1.3 V m 2.8 S ID=1A, VGS=4V ID=0.5A, VGS=2.5V 160 210 200 280 m 280 390 m Input Capacitance Ciss ID=0.1A, VGS=1.8V VDS=10V, f=1MHz 100 pF Output Capacitance Coss VDS=10V, f=1MHz 22 pF Reverse Transfer Capacitance Crss VDS=10V, f=1MHz 15 pF Turn-ON Delay Time td(on) See specified Test Circuit. 5.5 ns Rise Time tr td(off) See specified Test Circuit. 18 ns See specified Test Circuit. 17 ns Turn-OFF Delay Time Fall Time tf Qg Total Gate Charge 8 ns VDS=10V, VGS=10V, ID=1.2A See specified Test Circuit. 4.5 nC nC Gate-to-Source Charge Qgs Qgd VDS=10V, VGS=10V, ID=1.2A VDS=10V, VGS=10V, ID=1.2A 0.4 Gate-to-Drain "Miller" Charge Diode Forward Voltage VSD IS=1.2A, VGS=0 0.9 1.2 V 0.4 0.44 V 90 A 0.4 nC [SBD] Reverse Voltage VR Forward Voltage VF IR=0.5mA IF=0.5A Reverse Current Interterminal Capacitance IR C VR=6V VR=10V, f=1MHz Reverse Recovery Time trr IF=IR=100mA, See specified Test Circuit. Package Dimensions 15 V 13 pF 10 ns Electrical Connection unit : mm 2230 Top View 1.6 0.2 0.05 5 4 1 : Gate 2 : Source 3 : Anode 4 : Cathode 5 : Drain 6 : Drain 6 5 4 1 2 3 Top view 0.15 1.5 1 2 3 0.5 0.25 Bottom View Side View 0.56 0.05 1.6 6 Side View 1 : Gate 2 : Source 3 : Anode 4 : Cathode 5 : Drain 6 : Drain SANYO : SCH6 No.7744-2/6 SCH2806 Switching Time Test Circuit trr Test Circuit [MOSFET] [SBD] VDD=10V Duty10% D 50 100 10 VOUT PW=10s D.C.1% 10mA 100mA ID=1A RL=10 VIN 100mA VIN 4V 0V 10s --5V G trr SCH2806 50 S 2.5 0.4 75 1.0 0.8 0.6 25 C 0.2 0 C --25 Ta= 1.2 0.4 VGS=1.0V 25 C 0.8 1.4 C 1 5C .5V --25 Drain Current, ID -- A 1.6 3.0V [MOSFET] VDS=10V V 4.0V 6.0V 1.2 ID -- VGS 2.0 1.8 10.0V Drain Current, ID -- A 1.6 [MOSFET] C ID -- VDS 2.0 Ta= 7 P.G 0 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 0 1.0 Drain-to-Source Voltage, VDS -- V IT02983 RDS(on) -- VGS [MOSFET] 400 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 IT02984 Gate-to-Source Voltage, VGS -- V RDS(on) -- Ta [MOSFET] 350 Static Drain-to-Source On-State Resistance, RDS(on) -- m Static Drain-to-Source On-State Resistance, RDS(on) -- m Ta=25C 350 300 1.0A 250 ID=0.5A 200 150 100 50 0 0 2 4 6 8 Gate-to-Source Voltage, VGS -- V 10 IT02985 300 250 0V 4. S= VG 0A, 1. I D= 200 V 2.5 S= , VG 0.5A I D= 150 100 50 --60 --40 --20 0 20 40 60 80 100 Ambient Temperature, Ta -- C 120 140 160 IT02986 No.7744-3/6 [MOSFET] 25 C 1.0 7 5 C = Ta 3 5 --2 75 C 2 0.1 7 5 3 5 70.01 2 3 5 7 0.1 2 3 5 7 1.0 2 3 Drain Current, ID -- A 3 2 0.1 7 5 0.01 0.3 5 [MOSFET] 5 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 Diode Forward Voltage, VSD -- V IT02988 Ciss, Coss, Crss -- VDS [MOSFET] 3 VDD=10V VGS=4V 7 f=1MHz 2 3 Ciss, Coss, Crss -- pF tr Switching Time, SW Time -- ns 1.0 7 5 IT02987 SW Time -- ID 100 td(off) 2 10 tf 7 td(on) 5 3 Ciss 100 7 5 3 Coss 2 Crss 2 1.0 0.1 10 2 3 5 7 2 1.0 3 Drain Current, ID -- A 5 0 [MOSFET] 10 7 5 VDS=10V ID=1.2A 9 3 2 7 5 4 3 2 0 2 3 4 5 Total Gate Charge, Qg -- nC IT02991 PD -- Ta 0.8 8 10 12 14 16 18 20 <10s IDP=4.8A ID=1.2A 0 C s 0m s op er 3 2 s m 10 D 0.1 7 5 10 10 1.0 7 5 3 2 1 6 s 6 1 4 IT02990 Drain-to-Source Voltage, VDS -- V ASO [MOSFET] 1m Drain Current, ID -- A 8 0 2 IT02989 VGS -- Qg 10 Gate-to-Source Voltage, VGS -- V 3 2 3 2 2 0.01 0.001 2 3 Allowable Power Dissipation, PD -- W [MOSFET] VGS=0 5C 25 C --25 C 3 2 IF -- VSD 10 7 5 VDS=10V Ta= 7 yfs -- ID 10 7 5 Forward Current, IF -- A Forward Transfer Admittance, yfs -- S SCH2806 at io n Operation in this area is limited by RDS(on). Ta=25C Single pulse Mounted on a ceramic board(900mm20.8mm) 1unit 0.01 0.01 2 3 5 7 0.1 2 3 5 7 1.0 2 3 5 7 10 Drain-to-Source Voltage, VDS -- V 2 3 IT06930 [MOSFET] M 0.6 ou nte do na ce ram 0.4 ic bo ard (9 00 mm 0.2 2 0 .8m m) 1u nit 0 0 20 40 60 80 100 120 Ambient Temperature, Ta -- C 140 160 IT06931 No.7744-4/6 SCH2806 IF -- VF 1.0 [SBD] 7 Reverse Current, IR -- A 3 2 0.1 7 5 Ta= 125 C 100 C 75 C 50 C 25C Forward Current, IF -- A 5 3 2 0.01 0.1 0.2 0.3 0.4 100C 1000 7 5 3 2 75C 50C 100 7 5 3 2 25C 10 7 5 3 2 (1) Rectangular wave [SBD] Interterminal Capacitance, C -- pF 360 Sine wave 0.5 180 0.4 360 0.3 (1) Rectangular wave =60 (2) Rectangular wave =120 (3) Rectangular wave =180 (4) Sine wave =180 0.2 0.1 0 0 0.2 0.4 0.6 0.8 1.0 1.2 Average Forward Current, IO -- A IFSM -- t 3.5 15 IT06805 [SBD] f=1MHz 0.6 C -- VR 7 (2) (4) (3) 0.8 0.7 10 Reverse Voltage, VR -- V IT06804 PF(AV) -- IO 0.9 5 0 0.5 Forward Voltage, VF -- V Average Forward Power Dissipation, PF(AV) -- W [SBD] Ta=125C 1.0 0 Surge Forward Current, IFSM(Peak) -- A IR -- VR 10000 7 5 3 2 1.4 IT06806 5 3 2 10 7 5 1.0 2 3 5 7 10 Reverse Voltage, VR -- V 2 3 IT06807 [SBD] Current waveform 50Hz sine wave 3.0 IS 20ms t 2.5 2.0 1.5 1.0 0.5 0 7 0.01 2 3 5 7 0.1 2 3 Time, t -- s 5 7 1.0 2 3 ID00338 No.7744-5/6 SCH2806 Specifications of any and all SANYO products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO products(including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be exported without obtaining the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of SANYO Electric Co., Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of May, 2004. Specifications and information herein are subject to change without notice. PS No.7744-6/6