Advanced Power N-CHANNEL ENHANCEMENT MODE
Electronics Corp. POWER MOSFET
▼ Lower Gate Charge BVDSS 30V
▼ Simple Drive Requirement RDS(ON) 25mΩ
▼ Fast Switching Characteristic ID20A
Description
□
Absolute Maximum Ratings
Symbol Units
VDS V
VGS V
ID@TC=25℃A
ID@TC=100℃A
IDM A
PD@TC=25℃W
W/℃
TSTG ℃
TJ℃
Symbol Value Units
Rthj-c Thermal Resistance Junction-case Max. 10 ℃/W
Rthj-a Thermal Resistance Junction-ambient Max. 110 ℃/W
Data & specifications subject to change without notice 200720071-1/4
Thermal Data Parameter
Linear Derating Factor 0.1
Storage Temperature Range
Operating Junction Temperature Range -55 to 175
-55 to 175
Total Power Dissipation
Gate-Source Voltage ±20
Continuous Drain Current 20
Continuous Drain Current 14
Pulsed Drain Current160
Parameter Rating
Drain-Source Voltage 30
AP40U03GH
15
RoHS-compliant Product
GDSTO-252(H)
The Advanced Power MOSFETs from APEC provide the designer with
the best combination of fast switching, ruggedized device design, low
on-resistance and cost-effectiveness.
The TO-252 package is universally preferred for all commercial-
industrial surface mount applications and suited for low voltage
applications such as DC/DC converters.
G
D
S
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol Parameter Test Conditions Min. Typ. Max. Units
BVDSS Drain-Source Breakdown Voltage VGS=0V, ID=250uA 30 - - V
RDS(ON) Static Drain-Source On-Resistance2VGS=10V, ID=12A - - 25 mΩ
VGS=4.5V, ID=8A - - 40 mΩ
VGS(th) Gate Threshold Voltage VDS=VGS, ID=250uA 1 - 3 V
gfs Forward Transconductance VDS=10V, ID=12A - 12 - S
IDSS Drain-Source Leakage Current (Tj=25oC) VDS=30V, VGS=0V - - 1 uA
IGSS Gate-Source Leakage VGS=±20V - - ±100 nA
QgTotal Gate Charge2ID=12A - 8 13 nC
Qgs Gate-Source Charge VDS=24V - 1.5 - nC
Qgd Gate-Drain ("Miller") Charge VGS=4.5V - 5 - nC
td(on) Turn-on Delay Time2VDS=15V - 5 - ns
trRise Time ID=12A - 36.5 - ns
td(off) Turn-off Delay Time RG=3.3Ω,VGS=10V - 16 - ns
tfFall Time RD=1.25Ω-5-
ns
Ciss Input Capacitance VGS=0V - 450 720 pF
Coss Output Capacitance VDS=25V - 80 - pF
Crss Reverse Transfer Capacitance f=1.0MHz - 75 - pF
RgGate Resistance f=1.0MHz - 1.4 2.1 Ω
Source-Drain Diode
Symbol Parameter Test Conditions Min. Typ. Max. Units
VSD Forward On Voltage2IS=12A, VGS=0V - - 1.2 V
trr Reverse Recovery Time2IS=12A, VGS=0V, - 20 - ns
Qrr Reverse Recovery Charge dI/dt=100A/µs - 15 - nC
Notes:
1.Pulse width limited by Max. junction temperature
2.Pulse test
THIS PRODUCT IS AN ELECTROSTATIC SENSITIVE, PLEASE HANDLE WITH CAUTION.
DEVICE OR SYSTEM ARE NOT AUTHORIZED.
2/4
THIS PRODUCT HAS BEEN QUALIFIED FOR CONSUMER MARKET. APPLICATIONS OR USES AS CRITERIAL COMPONENT IN LIFE SUPPORT
AP40U03GH
Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics
Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance
v.s. Junction Temperature
Fig 5. Forward Characteristic of Fig 6. Gate Threshold Voltage v.s.
Reverse Diode Junction Temperature
3/4
AP40U03GH
0
10
20
30
40
0.0 1.0 2.0 3.0 4.0
VDS , Drain-to-Source Voltage (V)
ID , Drain Current (A)
TC=175oC 10V
7.0V
5.0V
4.5V
VG=3.0V
0
10
20
30
40
50
60
0.0 1.0 2.0 3.0 4.0
VDS , Drain-to-Source Voltage (V)
ID , Drain Current (A)
TC=25oC 10V
7.0V
5.0V
4.5V
VG=3.0V
0.4
0.8
1.2
1.6
2.0
-50 0 50 100 150 200
Tj , Junction Temperature ( oC)
Normalized RDS(ON)
ID=12A
VG=10V
0
4
8
12
16
20
0 0.4 0.8 1.2 1.6
VSD , Source-to-Drain Voltage (V)
IS(A)
Tj=25oC
Tj=175oC
16
20
24
28
32
36
246810
VGS , Gate-to-Source Voltage (V)
RDS(ON) (m
Ω
)
I
D=12A
TC=25oC
0.0
0.4
0.8
1.2
1.6
-50 0 50 100 150 200
Tj , Junction Temperature ( oC)
Normalized VGS(th) (V)
Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics
Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance
Fig 11. Switching Time Waveform Fig 12. Gate Charge Waveform
4/4
AP40U03GH
0
1
10
100
0.1 1 10 100
VDS ,Drain-to-Source Voltage (V)
ID (A)
TC=25oC
S
in
g
le Puls
e
100us
1ms
10ms
100ms
DC
0.01
0.1
1
0.00001 0.0001 0.001 0.01 0.1 1
t , Pulse Width (s)
Normalized Th e rmal Re sponse (Rthjc)
PDM
Duty Factor = t/T
Peak Tj = PDM x Rthjc + TC
t
T
0.02
0.01
0.05
0.1
0.2
Duty factor = 0.5
Single Pulse
0
4
8
12
16
0 4 8 12 16 20
QG , Total Gate Charge (nC)
VGS , Gate to Sourc e Voltage ( V)
I D=12A
VDS =15V
VDS =18V
V DS =24V
10
100
1000
1 5 9 1317212529
VDS ,Drain-to-Source Voltage (V)
C (pF)
f=1.0MHz
Ciss
Coss
Crss
Q
VG
4.5V
QGS QGD
QG
Charge
td(on) trtd(off) tf
VDS
VGS
10%
90%
Package Outline : TO-252
Millimeters
MIN NOM MAX
A2 1.80 2.30 2.80
A3 0.40 0.50 0.60
B1 0.40 0.70 1.00
D 6.00 6.50 7.00
D1 4.80 5.35 5.90
E3 3.50 4.00 4.50
E3 F 2.20 2.63 3.05
F1 0.5 0.85 1.20
E1 5.10 5.70 6.30
E2 0.50 1.10 1.80
e -- 2.30 --
C 0.35 0.50 0.65
1.All Dimensions Are in Millimeters.
2.Dimension Does Not Include Mold Protrusions.
Part Marking Information & Packing : TO-252
SYMBOLS
ADVANCED POWER ELECTRONICS CORP.
e
e
D
D1
E2
E1
F
B1 F1
A2
A3 C
R : 0.127~0.381
(
0.1mm
Part Package Code
40U03GH
YWWSSS Date Code (YWWSSS)
Y：Last Digit Of The Year
WW：Week
SSS：Sequence
LOGO
meet Rohs requirement
