DC–20 GHZ MMIC LOW LOSS SPST ABSORPTIVE SWITCH
Specifications subject to change without notice
Filtronic Compound Semiconductors Ltd
Tel: +44 (0) 1325 301111 Fax: +44 (0) 1325 306177 Email: sales@filcs.com Website: www.filtronic.com
1
Pre-Production Datasheet v3.0
FM
S
2
0
2
3
FEATURES:
• Low insertion loss: 1 dB at 20 GHz
• High isolation: 50 dB at 20 GHz
• Absorptive output in off-state
• Excellent low control voltage performance
• Available in die form
GENERAL DESCRIPTION:
The FMS2023 is a low loss high isolation
broadband single-pole-single-throw Gallium
Arsenide switch, designed on the FL05 0.5µm
switch process from Filtronic. It offers
absorptive properties from the output (50
Ohms termination).
This process technology offers leading-edge
performance optimised for switch applications.
The FMS2023 is developed for the broadband
communications, instrumentation and
electronic warfare markets.
FUNCTIONAL SCHEMATIC:
RFout
RFin
V1 V2
TYPICAL APPLICATIONS:
• Broadband communications
• Test Instrumentation
• Fibre Optics
• Electronic warfare (ECM, ESM)
ELECTRICAL SPECIFICATIONS (SMALL-SIGNAL UNLESS OTHERWISE STATED):
PARAMETER CONDITIONS MIN TYP MAX UNITS
Insertion Loss
DC
5 GHz
10 GHz
15 GHz
20 GHz
-0.6
-0.75
-0.9
-1.05
-1.25
-0.42
-0.55
-0.7
-0.8
-1.0
–
–
–
–
–
dB
dB
dB
dB
dB
Isolation DC-20 GHz – -50 -43 dB
Input Return Loss
(ON state) DC-20 GHz – -21 -17 dB
Output Return Loss
(ON state) DC-20 GHz – -23 -17 dB
Output Return Loss
(OFF state) DC-20 GHz – -11 -9 dB
P1dB 2 GHz
10 GHz
20 GHz
26
25
22
28
27
24
–
–
–
dBm
dBm
dBm
Switching speed
10% to 90% RF
90% to 10% RF
50% DC to 90% RF
50% DC to 10% RF
–
–
–
–
17
42
27
53
–
–
–
–
ns
ns
ns
ns
Note 1: TAMBIENT = 25°C, Vctrl = 0V/-5V
Note 2 : Specifications based on on-wafer measurements
Specifications subject to change without notice
Filtronic Compound Semiconductors Ltd
Tel: +44 (0) 1325 301111 Fax: +44 (0) 1325 306177 Email: sales@filcs.com Website: www.filtronic.com
2
Pre-Production Datasheet v3.0
FM
S
2
0
2
3
ABSOLUTE MAXIMUM RATINGS:
Note: Exceeding any one of these absolute
maximum ratings may cause permanent
damage to the device.
PAD LAYOUT:
TRUTH TABLE:
Note: -5V ± 0.2V; 0V ± 0.2V
Note: Co-ordinates are referenced from the bottom
left hand corner of the die to the centre of bond pad
opening
PARAMETER SYMBOL ABSOLUTE
MAXIMUM
Max Input Power Pin +27dBm
Operating Temp Toper -40°C to +85°C
Storage Temp Tstor -55°C to +150°C
PAD
NAME DESCRIPTION PIN
COORDINATES
(µm)
RFIN RFIN 141,587
RFO RFOUT 1789,587
V1 V1 901,161
V2 V2 1101,161
CONTROL LINE RF PATH
V1 V2 RFIN-RFO
-5V 0V On (Low Loss)
0V -5V Off (Isolation)
DIE SIZE (µm) DIE THICKNESS (µm) MIN. BOND PAD PITCH
(µm) MIN. BOND PAD OPENING
(µm x µm )
1910 x 1110 100 150 116 x 116
Specifications subject to change without notice
Filtronic Compound Semiconductors Ltd
Tel: +44 (0) 1325 301111 Fax: +44 (0) 1325 306177 Email: sales@filcs.com Website: www.filtronic.com
3
Pre-Production Datasheet v3.0
FM
S
2
0
2
3
TYPICAL PERFORMANCE FOR ON-WAFER MEASUREMENTS:
Note: Measurement Conditions VCTRL= -5V (low) & 0V (high), TAMBIENT = 25° C unless otherwise stated
Insertion Loss (S 21 ON)
-1.20
-1.00
-0.80
-0.60
-0.40
-0.20
0.00
0 2 4 6 8 101214161820
Frequency (GHz)
S21 (dB)
Isolation (S21 OFF)
-80.00
-70.00
-60.00
-50.00
-40.00
-30.00
-20.00
-10.00
0.00
02468101214161820
Frequency (GHz)
S21 (dB)
In put Return Loss (S11 O N)
-30.00
-25.00
-20.00
-15.00
-10.00
-5.00
0.00
02468101214161820
Frequency (GHz)
S11 (dB)
Output Return Loss (S22 ON)
-45.00
-40.00
-35.00
-30.00
-25.00
-20.00
-15.00
-10.00
-5.00
0.00
0 2 4 6 8 101214161820
Frequency (GHz)
S11 (dB)
Absorpti ve Output Return Loss (S22 OFF)
-25.00
-20.00
-15.00
-10.00
-5.00
0.00
02468101214161820
Frequency (GHz)
S11 (dB)
P1dB
0.00
4.00
8.00
12.00
16.00
20.00
24.00
28.00
2 4 6 8 10 12 14 16 18 20
Frequency (GHz)
P1dB (dBm)
Specifications subject to change without notice
Filtronic Compound Semiconductors Ltd
Tel: +44 (0) 1325 301111 Fax: +44 (0) 1325 306177 Email: sales@filcs.com Website: www.filtronic.com
4
Pre-Production Datasheet v3.0
FM
S
2
0
2
3
TYPICAL PERFORMANCE FOR ON-WAFER MEASUREM ENTS OVER TEMPERATURE:
Note: Measurement Conditions VCTRL= -5V (low) & 0V (high)
TAMBIENT = 25°C TCOLD = -40°C THOT = +85°C
Insertion Loss (S21 ON)
-1.20
-1.00
-0.80
-0.60
-0.40
-0.20
0.00
02468101214161820
Frequency (GHz)
S21 (dB)
Isolation (S21 OFF)
-80.00
-70.00
-60.00
-50.00
-40.00
-30.00
-20.00
-10.00
0.00
0 2 4 6 8 101214161820
Frequency (GHz)
S21 (dB)
Input Return Loss (S11 ON)
-30.00
-25.00
-20.00
-15.00
-10.00
-5.00
0.00
0 2 4 6 8 101214161820
Frequency (GHz)
S11 (dB)
Output Return Loss (S22 ON)
-45.00
-40.00
-35.00
-30.00
-25.00
-20.00
-15.00
-10.00
-5.00
0.00
0 2 4 6 8 101214161820
Frequency (GHz)
S22 (dB)
P1dB
0.00
4.00
8.00
12.00
16.00
20.00
24.00
28.00
2 4 6 8 10 12 14 16 18 20
Frequency (GHz)
P1dB (dBm)
Absorptive Output Return Loss (S22 OFF)
-25.00
-20.00
-15.00
-10.00
-5.00
0.00
0 2 4 6 8 101214161820
Frequency (GHz)
S22 (dB)
Specifications subject to change without notice
Filtronic Compound Semiconductors Ltd
Tel: +44 (0) 1325 301111 Fax: +44 (0) 1325 306177 Email: sales@filcs.com Website: www.filtronic.com
5
Pre-Production Datasheet v3.0
FM
S
2
0
2
3
PREFERRED ASSEMBLY INSTRUCTIONS:
GaAs devices are fragile and should be
handled with great care. Specially designed
collets should be used where possible.
The back of the die is metallised and the
recommended mounting method is by the use
of conductive epoxy. Epoxy should be applied
to the attachment surface uniformly and
sparingly to avoid encroachment of epoxy on
to the top face of the die and ideally should not
exceed half the chip height. For automated
dispense Ablestick LMISR4 is recommended
and for manual dispense Ablestick 84-1 LMI or
84-1 LMIT are recommended. These sh ould be
cured at a temperature of 150°C for one hour
in an oven especially set aside for epoxy
curing only. If possible the curing oven should
be flushed with dry nitrogen. Eutectic die
attach is not recommended.
This part has gold (Au) bond pads requiring
the use of gold (99.99% pure) bondwire. It is
recommended that 25.4µm diameter gold wire
be used. Thermosonic ball bonding is
preferred. A nominal stage temperature of
150°C and a bonding force of 40g has been
shown to give effective results for 25µm wire.
Ultrasonic energy shall be kept to a minimum.
For this bonding technique, stage temperature
should not be raised above 200°C and bond
force should not be raised above 60g.
Thermosonic wedge bonding and
thermocompression wedge bonding can also
be used to achieve good wire bonds.
Bonds should be made from the die first and
then to the mounting substrate or package.
The physical length of the bondwires should be
minimised especially when making RF or
ground connections.
HANDLING PRECAUTIONS:
To avoid damage to
the devices care
should be exercised
during handling.
Proper Electrostatic Discharge (ESD)
precautions should be observed at all stages
of storage, handling, assembly, and testing.
These devices should be treated as Class 1A
(250-500 V) as defined in JEDEC Standard
No. 22-A114. Further information on ESD
control measures can be found in MIL-STD-
1686 and MIL-HDBK-263.
APPLICATION NOTES & DESIGN DATA:
Application Notes and design data including S-
parameters are available on requ est.
DISCLAIMERS:
This product is not designed for use in any
space based or life sustaining/supporting
equipment.
ORDERING INFORMATION:
PART NUMBER DESCRIPTION
FMS2023-000-WP Die in Waffle-pack
(Gel-pak available on request)
