SHINDENGEN VX-2 Series Power MOSFET 2SK2188 (F10F50VX2) N-Channel Enhancement type OUTLINE DIMENSIONS Case : FTO-220 (Unit : mm) 500V 10A FEATURES Input capacitance (Ciss) is small. Especially, input capacitance at 0 biass is small. The static Rds(on) is small. The switching time is fast. APPLICATION Switching power supply of AC 100V input High voltage power supply Inverter RATINGS Absolute Maximum Ratings iTc = 25j Item Symbol Conditions Storage Temperature T stg T ch Channel Temperature VDSS Drain-Source Voltage VGSS Gate-Source Voltage ID Continuous Drain CurrentiDCj I DP Continuous Drain CurrentiPeak) Continuous Source CurrentiDCj IS Total Power Dissipation PT I AS Single Pulse Avalanche Current T ch = 25 Vdis Terminals to case, AC 1 minute Dielectric Strength TOR i Recommended torque : 0.3Nm j Mounting Torque Ratings -55150 150 500 }30 10 30 10 40 10 2 0.5 Unit V A W A kV NEm VX-2 Series Power MOSFET Electrical Characteristics Tc = 25 Item Symbol Drain-Source Breakdown Voltage V(BR)DSS Zero Gate Voltage Drain Current I DSS Gate-Source Leakage Current I GSS Forward Tran]conductance gfs Static Drain-Source On-]tate Resistance RDS(ON) Gate Threshold Voltage VTH Source-Drain Diode Forwade Voltage VSD The\mal Resistance AEjc Total Gate Charge Qg Input Capacitance Ciss Reverse Transfer Capacitance Crss Output Capacitance Coss Turn-On Time ton Turn-Off Time toff 2SK2188 ( F10F50VX2 ) Conditions I D = 1mA, VGS = 0V VDS = 500V, VGS = 0V VGS = }30V, VDS = 0V I D = 5A, VDS = 10V I D = 5A, VGS = 10V I D = 1mA, VDS = 10V I S = 5A, VGS = 0V junction to case VDD = 400V, VGS = 10V, I D = 10A VDS = 10V, VGS = 0V, f = 1MHZ I D = 5A, VGS = 10V, RL = 30 VGS = 0V Min. 500 Typ. 2.4 6.3 0.8 3.0 2.5 30 890 70 200 70 140 Max. 250 }0.1 Unit V EA S 1.0 3.5 V 1.5 3.12 /L nC pF 110 220 ns 2SK2188 Transfer Characteristics 20 Tc = -55C 25C Drain Current ID [A] 15 100C 150C 10 5 0 VDS = 25V pulse test TYP 0 5 10 15 Gate-Source Voltage VGS [V] 20 2SK2188 Static Drain-Source On-state Resistance Static Drain-Source On-state Resistance RDS(ON) [] 10 ID = 5A 1 0.1 VGS = 10V pulse test TYP -50 0 50 100 Case Temperature Tc [C] 150 2SK2188 Gate Threshold Voltage 6 Gate Threshold Voltage VTH [V] 5 4 3 2 1 0 VDS = 10V ID = 1mA TYP -50 0 50 100 Case Temperature Tc [C] 150 2SK2188 Safe Operating Area 100 10 Drain Current ID [A] 100s 200s R DS(ON) limit 1 1ms 10ms 0.1 DC Tc = 25C Single Pulse 0.01 1 10 100 Drain-Source Voltage VDS [V] 1000 Transient Thermal Impedance jc(t) [C/W] 0.01 10-4 0.1 1 10 10-3 10-2 2SK2188 Time t [s] 10-1 100 Transient Thermal Impedance 101 102 2SK2188 Capacitance Capacitance Ciss Coss Crss [pF] 10000 Ciss 1000 Coss 100 Crss f=1MHz Tc=25C TYP 10 0 20 40 60 80 Drain-Source Voltage VDS [V] 100 2SK2188 Power Derating 100 Power Derating [%] 80 60 40 20 0 0 50 100 Case Temperature Tc [C] 150 2SK2188 Gate Charge Characteristics 20 VDS 400 15 VDD = 400V VGS 200V 300 100V 10 200 5 100 ID = 10A TYP 0 0 10 20 30 Gate Charge Qg [nC] 40 0 50 Gate-Source Voltage VGS [V] Drain-Source Voltage VDS [V] 500