SHINDENGEN
2SK2188 OUTLINE DIMENSIONS
RATINGS
(F10F50VX2)
500V 10A
VX-2 Series Power MOSFET N-Channel Enhancement type
(Unit : mm)
Case : FTO-220
Switching power supply of AC 100V input
High voltage power supply
Inverter
APPLICATION
Input capacitance (Ciss) is small.
Especially, input capacitance
at 0 biass is small.
The static Rds(on) is small.
The switching time is fast.
FEATURES
Absolute Maximum Ratings iTc = 25j
Item Symbol Conditions Ratings Unit
Storage Temperature Tstg -55`150
Channel Temperature Tch 150
Drain-Source Voltage VDSS 500 V
Gate-Source Voltage VGSS }30
Continuous Drain CurrentiDCjID10
Continuous Drain CurrentiPeak) IDP 30 A
Continuous Source CurrentiDCjIS10
Total Power Dissipation PT40 W
Single Pulse Avalanche Current IAS Tch = 2510A
Dielectric Strength Vdis Terminals to case, AC 1 minute 2kV
Mounting Torque TOR i Recommended torque : 0.3N¥m j0.5 NEm
2SK2188 ( F10F50VX2 )VX-2 Series Power MOSFET
Electrical Characteristics Tc = 25
Item Symbol Conditions Min. Typ. Max. Unit
Drain-Source Breakdown Voltage V(BR)DSS ID = 1mA, VGS = 0V 500 V
Zero Gate Voltage Drain Current IDSS VDS
= 500V, VGS = 0V 250 ÊA
Gate-Source Leakage Current IGSS VGS
= }30V, VDS
= 0V }0.1
Forward Tran]conductance gfs ID = 5A, VDS = 10V 2.4 6.3 S
Static Drain-Source On-]tate Resistance RDS(ON) ID = 5A, VGS = 10V 0.8 1.0 ¶
Gate Threshold Voltage VTH ID = 1mA, VDS = 10V 2.5 3.0 3.5 V
Source-Drain Diode Forwade Voltage VSD IS = 5A, VGS
= 0V 1.5
The\mal Resistance Æjc junction to case 3.12 /L
Total Gate Charge QgVDD = 400V, VGS
= 10V, ID = 10A 30 nC
Input Capacitance Ciss 890
Reverse Transfer Capacitance Crss VDS = 10V, VGS = 0V, f = 1MHZ70 pF
Output Capacitance Coss 200
Turn-On Time ton ID = 5A, VGS = 10V, RL = 30¶70 110 ns
Turn-Off Time toff VGS
= 0V 140 220
0
5
10
15
20
0 5 10 15 20
2SK2188 Transfer Characteristics
VDS = 25V
pulse test
TYP
Tc = −55°C
25°C
100°C
150°C
Gate-Source Voltage VGS [V]
Drain Current ID [A]
Static Drain-Source On-state Resistance
0.1
1
10
-50 0 50 100 150
2SK2188
VGS = 10V
pulse test
TYP
ID = 5A
Case Temperature Tc [°C]
Static Drain-Source On-state Resistance RDS(ON)
[Ω]
Gate Threshold Voltage
0
1
2
3
4
5
6
-50 0 50 100 150
2SK2188
VDS = 10V
ID = 1mA
TYP
Case Temperature Tc [°C]
Gate Threshold Voltage VTH
[V]
Safe Operating Area
0.01
0.1
1
10
100
110 100 1000
2SK2188
100µs
Tc = 25°C
Single Pulse
200µs
1ms
10ms
DC
Drain-Source Voltage VDS [V]
Drain Current ID [A]
RDS(ON)
limit
Transient Thermal Impedance
0.01
0.1
1
10
2SK2188
10-4 10-3 10-2 10-1 100101102
0.05 0.50.2 20 5052 200 500 2000 5000
0.02 0.05 0.50.2 20520.0050.002
Time t [s]
Transient Thermal Impedance θjc(t) [°C/W]
Capacitance
10
100
1000
10000
020 40 60 80 100
2SK2188
0.005
f=1MHz
Tc=25°C
TYP
Ciss
Coss
Crss
Drain-Source Voltage VDS [V]
Capacitance Ciss Coss Crss [pF]
0
20
40
60
80
100
050 100 150
2SK2188 Power Derating
Power Derating [%]
Case Temperature Tc [°C]
010 20 30 40 50
0
100
200
300
400
500
2SK2188
0
5
10
15
20
200V
Gate Charge Characteristics
ID = 10A
TYP
100V
VDD = 400V
VGS
VDS
Gate Charge Qg [nC]
Drain-Source Voltage VDS [V]
Gate-Source Voltage VGS [V]
