New Product VSSB420S Vishay General Semiconductor Surface Mount Trench MOS Barrier Schottky Rectifier FEATURES * Low profile package TMBS(R) * Ideal for automated placement * Trench MOS Schottky technology * Low power losses, high efficiency * Low forward voltage drop * Meets MSL level 1, per J-STD-020, LF maximum peak of 260 C * Compliant to RoHS Directive 2002/95/EC and in accordance to WEEE 2002/96/EC DO-214AA (SMB) * Halogen-free according to IEC 61249-2-21 definition TYPICAL APPLICATIONS For use in high frequency converters, freewheeling diodes, DC/DC converters and polarity protection applications. PRIMARY CHARACTERISTICS IF(AV) 4.0 A VRRM 200 V IFSM 40 A VF at IF = 4.0 A 0.71 V TJ max. 150 C MECHANICAL DATA Case: DO-214AA (SMB) Molding compound meets UL 94 V-0 flammability rating Base P/N-M3 - halogen-free and RoHS compliant, commercial grade Terminals: Matte tin plated leads, solderable J-STD-002 and JESD 22-B102 M3 suffix meets JESD 201 class 1A whisker test per Polarity: Color band denotes the cathode end MAXIMUM RATINGS (TA = 25 C unless otherwise noted) PARAMETER SYMBOL Device marking code VSSB420S UNIT V4D Maximum repetitive peak reverse voltage Maximum DC forward current Peak forward surge current 10 ms single half sine-wave superimposed on rated load Voltage rate of change (rated VR) Operating junction and storage temperature range VRRM 200 V IF (1) 4.0 IF (2) 1.8 IFSM 40 A dV/dt 10 000 V/s TJ, TSTG - 40 to + 150 C A Notes (1) Units mounted on PCB with 20 mm x 20 mm pad areas (2) Free air, mounted on recommended PCB 1 oz. pad area Document Number: 89317 Revision: 10-Nov-10 For technical questions within your region, please contact one of the following: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com www.vishay.com 1 New Product VSSB420S Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (TA = 25 C unless otherwise noted) PARAMETER TEST CONDITIONS TA = 25 C IF = 4.0 A Instantaneous forward voltage TA = 125 C VR = 180 V Reverse current per diode VR = 200 V Typical junction capacitance SYMBOL VF (1) TA = 25 C IR (2) TA = 125 C 4.0 V, 1 MHz MAX. UNIT 1.44 1.90 0.71 0.80 3 - A 0.7 - mA 4 150 A 1.1 10 mA 120 - pF V TA = 25 C TA = 125 C TYP. CJ Notes (1) Pulse test: 300 s pulse width, 1 % duty cycle (2) Pulse test: Pulse width 40 ms THERMAL CHARACTERISTICS (TA = 25 C unless otherwise noted) PARAMETER SYMBOL RJA Typical thermal resistance VSSB420S (1) UNIT 120 C/W RJM (2) 15 Notes (1) Free air, mounted on recommended PCB 1 oz. pad area; thermal resistance R JA - junction to ambient (2) Units mounted on PCB with 20 mm x 20 mm copper pad areas; thermal resistance R JM - junction to mount ORDERING INFORMATION (Example) PREFERRED P/N UNIT WEIGHT (g) PREFERRED PACKAGE CODE BASE QUANTITY DELIVERY MODE VSSB420S-M3/52T 0.096 52T 750 7" diameter plastic tape and reel VSSB420S-M3/5BT 0.096 5BT 3200 13" diameter plastic tape and reel RATINGS AND CHARACTERISTICS CURVES (TA = 25 C unless otherwise noted) 4 D = 0.5 3.5 4.0 Average Power Loss (W) Average Forward Rectified Current (A) 5.0 4.5 3.5 3.0 2.5 2.0 1.5 1.0 D = 0.2 3.0 2.5 D = 1.0 D = 0.1 2.0 T 1.5 1.0 D = tp/T 0.5 TM Measured at Terminal 0.5 D = 0.8 D = 0.3 tp 0 0 0 25 50 75 100 125 150 0 0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2 3.6 4.0 4.4 TM - Mount Temperature (C) Average Forward Current (A) Fig. 1 - Maximum Forward Current Derating Curve Fig. 2 - Forward Power Loss Characteristics www.vishay.com 2 For technical questions within your region, please contact one of the following: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com Document Number: 89317 Revision: 10-Nov-10 New Product VSSB420S Vishay General Semiconductor 1000 10 TA = 100 C TA = 125 C 1 100 TA = 25 C 10 0.1 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 0.1 1.6 1 10 100 Instantaneous Forward Voltage (V) Reverse Voltage (V) Fig. 3 - Typical Instantaneous Forward Characteristics Fig. 5 - Typical Junction Capacitance 10 1000 Transient Thermal Impedance (C/W) Instantaneous Reverse Current (mA) TJ = 25 C f = 1.0 MHz Vsig = 50 mVp-p TA = 150 C Junction Capacitance (pF) Instantaneous Forward Current (A) 100 TA = 150 C 1 TA = 125 C 0.1 TA = 100 C 0.01 0.001 TA = 25 C 0.0001 20 30 40 50 60 70 80 90 100 10 1 0.01 0.00001 10 Junction to Ambient 100 1 0.1 10 100 t - Pulse Duration (s) Percent of Rated Peak Reverse Voltage (%) Fig. 4 - Typical Reverse Characteristics Fig. 6 - Typical Transient Thermal Impedance PACKAGE OUTLINE DIMENSIONS in inches (millimeters) DO-214AA (SMB) Cathode Band Mounting Pad Layout 0.085 (2.159) MAX. 0.155 (3.94) 0.130 (3.30) 0.086 (2.20) 0.077 (1.95) 0.086 (2.18) MIN. 0.180 (4.57) 0.160 (4.06) 0.012 (0.305) 0.006 (0.152) 0.060 (1.52) MIN. 0.096 (2.44) 0.084 (2.13) 0.220 REF. 0.008 (0.2) 0 (0) 0.060 (1.52) 0.030 (0.76) 0.220 (5.59) 0.205 (5.21) Document Number: 89317 Revision: 10-Nov-10 For technical questions within your region, please contact one of the following: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com www.vishay.com 3 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. Material Category Policy Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment (EEE) - recast, unless otherwise specified as non-compliant. Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU. Revision: 12-Mar-12 1 Document Number: 91000