Semiconductor Components Industries, LLC, 2012
February, 2012 − Rev. 12
1Publication Order Number:
MJD200/D
MJD200 (NPN), MJD210,
NJVMJD210T4G (PNP)
Complementary Plastic
Power Transistors
NPN/PNP Silicon DPAK For Surface
Mount Applications
Designed for low voltage, low−power, high−gain audio
amplifier applications.
Features
Collector−Emitter Sustaining Voltage −
VCEO(sus) = 25 Vdc (Min) @ IC = 10 mAdc
High DC Current Gain − hFE = 70 (Min) @ IC = 500 mAdc
= 45 (Min) @ IC = 2 Adc
= 10 (Min) @ IC = 5 Adc
Lead Formed for Surface Mount Applications in Plastic Sleeves
(No Suffix)
Low Collector−Emitter Saturation Voltage −
VCE(sat) = 0.3 Vdc (Max) @ IC = 500 mAdc
= 0.75 Vdc (Max) @ IC = 2.0 Adc
High Current−Gain − Bandwidth Product −
fT = 65 MHz (Min) @ IC = 100 mAdc
Annular Construction for Low Leakage −
ICBO = 100 nAdc @ Rated VCB
Epoxy Meets UL 94 V−0 @ 0.125 in
ESD Ratings:
Human Body Model, 3B > 8000 V
Machine Model, C > 400 V
NJV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
These are Pb−Free Packages*
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
SILICON
POWER TRANSISTORS
5 AMPERES
25 VOLTS, 12.5 WATTS
DPAK
CASE 369C
STYLE 1
MARKING DIAGRAM
A = Assembly Location
Y = Year
WW = Work Week
x = 1 or 0
G=Pb−Free Package
AYWW
J2x0G
See detailed ordering and shipping information in the package
dimensions section on page 3 of this data sheet.
ORDERING INFORMATION
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MJD200 (NPN), MJD210, NJVMJD210T4G (PNP)
http://onsemi.com
2
MAXIMUM RATINGS
Rating Symbol Max Unit
Collector−Base Voltage VCB 40 Vdc
Collector−Emitter Voltage VCEO 25 Vdc
Emitter−Base Voltage VEB 8.0 Vdc
Collector Current
Continuous
Peak
IC5.0
10
Adc
Base Current IB1.0 Adc
Total Power Dissipation
@ TC = 25C
Derate above 25C
PD12.5
0.1
W
W/C
Total Power Dissipation (Note 1)
@ TA = 25C
Derate above 25C
PD1.4
0.011
W
W/C
Operating and Storage Junction Temperature Range TJ, Tstg −65 to +150 C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
1. These ratings are applicable when surface mounted on the minimum pad sizes recommended.
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Thermal Resistance, Junction−to−Case RqJC 10 C/W
Thermal Resistance, Junction−to−Ambient (Note 2) RqJA 89.3 C/W
2. These ratings are applicable when surface mounted on the minimum pad sizes recommended.
ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Characteristic
ÎÎÎÎ
ÎÎÎÎ
Symbol
ÎÎÎÎ
ÎÎÎÎ
Min
ÎÎÎÎ
ÎÎÎÎ
Max
ÎÎÎ
ÎÎÎ
Unit
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
OFF CHARACTERISTICS
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Collector−Emitter Sustaining Voltage (Note 3), (IC = 10 mAdc, IB = 0)
ÎÎÎÎ
ÎÎÎÎ
VCEO(sus)
ÎÎÎÎ
ÎÎÎÎ
25
ÎÎÎÎ
ÎÎÎÎ
−
ÎÎÎ
ÎÎÎ
Vdc
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Collector Cutoff Current
(VCB = 40 Vdc, IE = 0)
(VCB = 40 Vdc, IE = 0, TJ = 125C)
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
VCBO
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
−
−
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
100
100
ÎÎÎ
ÎÎÎ
ÎÎÎ
nAdc
mAdc
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Emitter Cutoff Current (VBE = 8 Vdc, IC = 0)
ÎÎÎÎ
ÎÎÎÎ
VEBO
ÎÎÎÎ
ÎÎÎÎ
−
ÎÎÎÎ
ÎÎÎÎ
100
ÎÎÎ
ÎÎÎ
nAdc
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ON CHARACTERISTICS
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
C Current Gain (Note 3),
(IC = 500 mAdc, VCE = 1 Vdc)
(IC = 2 Adc, VCE = 1 Vdc)
(IC = 5 Adc, VCE = 2 Vdc)
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
hFE
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
70
45
10
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
−
180
−
ÎÎÎ
ÎÎÎ
ÎÎÎ
−
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Collector−Emitter Saturation Voltage (Note 3)
(IC = 500 mAdc, IB = 50 mAdc)
(IC = 2 Adc, IB = 200 mAdc)
(IC = 5 Adc, IB = 1 Adc)
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
VCE(sat)
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
−
−
−
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
0.3
0.75
1.8
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
Vdc
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Base−Emitter Saturation Voltage (Note 3), (IC = 5 Adc, IB = 1 Adc)
ÎÎÎÎ
ÎÎÎÎ
VBE(sat)
ÎÎÎÎ
ÎÎÎÎ
−
ÎÎÎÎ
ÎÎÎÎ
2.5
ÎÎÎ
ÎÎÎ
Vdc
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Base−Emitter On Voltage (Note 3), (IC = 2 Adc, VCE = 1 Vdc)
ÎÎÎÎ
ÎÎÎÎ
VBE(on)
ÎÎÎÎ
ÎÎÎÎ
−
ÎÎÎÎ
ÎÎÎÎ
1.6
ÎÎÎ
ÎÎÎ
Vdc
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
DYNAMIC CHARACTERISTICS
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Current−Gain − Bandwidth Product (Note 4)
(IC = 100 mAdc, VCE = 10 Vdc, ftest = 10 MHz)
ÎÎÎÎ
ÎÎÎÎ
fT
ÎÎÎÎ
ÎÎÎÎ
65
ÎÎÎÎ
ÎÎÎÎ
−
ÎÎÎ
ÎÎÎ
MHz
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Output Capacitance MJD200
(VCB = 10 Vdc, IE = 0, f = 0.1 MHz) MJD210, NJVMJD210T4G
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
Cob
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
−
−
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
80
120
ÎÎÎ
ÎÎÎ
ÎÎÎ
pF
3. Pulse Test: Pulse Width = 300 ms, Duty Cycle [ 2%.
4. fT = hfe ftest.
MJD200 (NPN), MJD210, NJVMJD210T4G (PNP)
http://onsemi.com
3
ORDERING INFORMATION
Device Package Type Shipping†
MJD200G DPAK
(Pb−Free)
75 Units / Rail
MJD200RLG DPAK
(Pb−Free)
1,800 / Tape & Reel
MJD200T4G DPAK
(Pb−Free)
2,500 / Tape & Reel
MJD210G DPAK
(Pb−Free)
75 Units / Rail
MJD210RLG DPAK
(Pb−Free)
1,800 / Tape & Reel
MJD210T4 DPAK 2,500 / Tape & Reel
MJD210T4G DPAK
(Pb−Free)
2,500 / Tape & Reel
NJVMJD210T4G DPAK
(Pb−Free)
2,500 / Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
25
25
Figure 1. Power Derating
T, TEMPERATURE (C)
050 75 100 125 150
15
10
TC
5
20
PD, POWER DISSIPATION (WATTS)
Figure 2. Switching Time Test Circuit
2.5
0
1.5
1
TA
0.5
2
+11 V
25 ms
0
-9 V
RB
-4 V
D1
SCOPE
VCC
+30 V
RC
tr, tf 10 ns
DUTY CYCLE = 1%
51
D1 MUST BE FAST RECOVERY TYPE, e.g.:
1N5825 USED ABOVE IB 100 mA
MSD6100 USED BELOW IB 100 mA
TC
TA (SURFACE MOUNT)
RB and RC VARIED TO OBTAIN DESIRED CURRENT LEVELS
FOR PNP TEST CIRCUIT,
REVERSE ALL POLARITIES
10K
IC, COLLECTOR CURRENT (A)
10
5K
3K
2K
1K
500
300
200
100
50
1K
IC, COLLECTOR CURRENT (A)
VCC = 30 V
IC/IB = 10
TJ = 25C
t, TIME (ns)
500
300
200
100
50
td
30
20
10
5
1
0.01 0.03 0.05 0.50.2
0.02 0.1 0.3 10
Figure 3. Turn−On Time Figure 4. Turn−Off Time
t, TIME (ns)
3
2
5213
tr
MJD200
MJD210
30
20
0.01 0.03 0.05 0.50.2
0.02 0.1 0.3 105213
VCC = 30 V
IC/IB = 10
IB1 = IB2
TJ = 25C
ts
tf
MJD200
MJD210
MJD200 (NPN), MJD210, NJVMJD210T4G (PNP)
http://onsemi.com
4
IC, COLLECTOR CURRENT (A)
IC, COLLECTOR CURRENT (A)IC, COLLECTOR CURRENT (A)
hFE, DC CURRENT GAIN
Figure 5. DC Current Gain
Figure 6. “On” Voltage
IC, COLLECTOR CURRENT (A)
200
400
0.07 0.1 0.3 50.05
100
80
60
40
0.2
IC, COLLECTOR CURRENT (A)
Figure 7. Temperature Coefficients
20 0.7 1 320.5
25C
TJ = 150C
-55C
2
0.05
IC, COLLECTOR CURRENT (A)
5
1.6
1.2
0.8
0.4
0320.07 0.20.1 0.50.3 10.7
TJ = 25C
V, VOLTAGE (VOLTS)
NPN
MJD200
PNP
MJD210
VCE = 1 V
VCE = 2 V
50.05 3
200
400
100
80
60
40
20
hFE, DC CURRENT GAIN
25C
TJ = 150C
-55C
VCE = 1 V
VCE = 2 V
V, VOLTAGE (VOLTS)
VBE(sat) @ IC/IB = 10
VCE(sat) @ IC/IB = 10
VBE @ VCE = 1 V
qVC for VCE(sat)
qVB for VBE
2
0.05
1.6
1.2
0.8
0.4
0
320.07 0.20.1 0.50.3 10.7
TJ = 25C
VBE(sat) @ IC/IB = 10
VCE(sat) @ IC/IB = 10
VBE @ VCE = 1 V
V, TEMPERATURE COEFFICIENTS (mV/ C)
+2.5
+2
+1.5
+1
0
-0.5
-1
-1.5
-2
+0.5
-2.5
0.07 0.1 0.3 50.05 0.2 0.7 1 320.5
*APPLIES FOR IC/IB hFE/3
25C to 150C
-55C to 25C
25C to 150C
-55C to 25C
V, TEMPERATURE COEFFICIENTS (mV/ C)
+2.5
+2
+1.5
+1
0
-0.5
-1
-1.5
-2
+0.5
-2.5
0.07 0.1 0.3 50.05 0.2 0.7 1 320.5
5
0.07 0.1 0.30.2 0.7 1 20.5
*APPLIES FOR IC/IB hFE/3
*qVC for VCE(sat)
qVB for VBE
25C to 150C
-55C to 25C
25C to 150C
-55C to 25C
MJD200 (NPN), MJD210, NJVMJD210T4G (PNP)
http://onsemi.com
5
t, TIME (ms)
0.01
0.02 0.05 1 2 5 10 20 50 100 2000.1 0.50.2
1
0.2
0.1
0.05
r(t), TRANSIENT THERMAL
RqJC(t) = r(t) qJC
RqJC = 10C/W MAX
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1
TJ(pk) - TC = P(pk) qJC(t)
P(pk)
t1
t2
DUTY CYCLE, D = t1/t2
0.2
0 (SINGLE PULSE)
RESISTANCE (NORMALIZED)
Figure 8. Thermal Response
0.5 D = 0.5
0.05
0.3
0.7
0.07
0.03
0.02
0.1
0.02
0.01
10
VCE, COLLECTOR−EMITTER VOLTAGE (V)
0.01 30
2
5
0.1
BONDING WIRE LIMITED
THERMALLY LIMITED @ TC = 25C
(SINGLE PULSE)
SECOND BREAKDOWN LIMITED
CURVES APPLY BELOW
RATED VCEO
Figure 9. Active Region Safe Operating Area
500ms
dc
1
3
1ms
2010753210.3
100ms
TJ = 150C
IC, COLLECTOR CURRENT (AMP)
5ms There are two limitations on the power handling ability of
a transistor: average junction temperature and second
breakdown. Safe operating area curves indicate IC − VCE
limits of the transistor that must be observed for reliable
operation; i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.
The data of Figure 9 is based on TJ(pk) = 150C; TC is
variable depending on conditions. Second breakdown pulse
limits are valid for duty cycles to 10% provided TJ(pk)
v 150C. TJ(pk) may be calculated from the data in
Figure 8. At high case temperatures, thermal limitations will
reduce the power that can be handled to values less than the
limitations imposed by second breakdown.
200
VR, REVERSE VOLTAGE (V)
20 40
70
100
30
Figure 10. Capacitance
50
201064210.4
C, CAPACITANCE (pF)
0.6
TJ = 25C
MJD200 (NPN)
MJD210 (PNP)
Cob
Cib
MJD200 (NPN), MJD210, NJVMJD210T4G (PNP)
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6
PACKAGE DIMENSIONS
DPAK
CASE 369C−01
ISSUE D
STYLE 1:
PIN 1. BASE
2. COLLECTOR
3. EMITTER
4. COLLECTOR
5.80
0.228
2.58
0.101
1.6
0.063
6.20
0.244
3.0
0.118
6.172
0.243
ǒmm
inchesǓ
SCALE 3:1
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
SOLDERING FOOTPRINT*
b
D
E
b3
L3
L4
b2
eM
0.005 (0.13) C
c2
A
c
C
Z
DIM MIN MAX MIN MAX
MILLIMETERSINCHES
D0.235 0.245 5.97 6.22
E0.250 0.265 6.35 6.73
A0.086 0.094 2.18 2.38
b0.025 0.035 0.63 0.89
c2 0.018 0.024 0.46 0.61
b2 0.030 0.045 0.76 1.14
c0.018 0.024 0.46 0.61
e0.090 BSC 2.29 BSC
b3 0.180 0.215 4.57 5.46
L4 −−− 0.040 −−− 1.01
L0.055 0.070 1.40 1.78
L3 0.035 0.050 0.89 1.27
Z0.155 −−− 3.93 −−−
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME
Y14.5M, 1994.
2. CONTROLLING DIMENSION: INCHES.
3. THERMAL PAD CONTOUR OPTIONAL WITHIN DI-
MENSIONS b3, L3 and Z.
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD
FLASH, PROTRUSIONS, OR BURRS. MOLD
FLASH, PROTRUSIONS, OR GATE BURRS SHALL
NOT EXCEED 0.006 INCHES PER SIDE.
5. DIMENSIONS D AND E ARE DETERMINED AT THE
OUTERMOST EXTREMES OF THE PLASTIC BODY.
6. DATUMS A AND B ARE DETERMINED AT DATUM
PLANE H.
12 3
4
H0.370 0.410 9.40 10.41
A1 0.000 0.005 0.00 0.13
L1 0.108 REF 2.74 REF
L2 0.020 BSC 0.51 BSC
A1
H
DETAIL A
SEATING
PLANE
A
B
C
L1
L
H
L2 GAUGE
PLANE
DETAIL A
ROTATED 90 CW5
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to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should
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Phone: 81−3−5817−1050
MJD200/D
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