SENSITRON
SEMICONDUCTOR
• 221 West Industry Court Deer Park, NY 11729-4681 (631) 586-7600 FAX (631) 242-9798 •
• World Wide Web Site - http://www.sensitron.com • E-Mail Address - sales@sensitron.com •
MBRF1045CT
Technical Data
Data Sheet M2619, Rev. C
MBRF1045CT SCHOTTKY RECTIFIER
Applications:
•
••
• Switching power supply •
••
• Conve rters •
••
• Free-Wheeling diodes •
••
• Reverse bat t e ry protection
Features:
• 150 °C TJ operation
• Cent e r tap conf iguration
• Low forwar d voltage dr op
• High purity, high temperature epoxy encapsulation for enhanced mechanical strength and
moisture resistance
• Hig h fr e quenc y operation
• Guard ring for enhanced ruggedness and long term reliability
Mech anical Dimensions: In mm / Inches
ITO-220
SENSITRON
SEMICONDUCTOR
• 221 West Industry Court Deer Park, NY 11729-4681 (631) 586-7600 FAX (631) 242-9798 •
• World Wide Web Site - http://www.sensitron.com • E-Mail Address - sales@sensitron.com •
MBRF1045CT
Technical Data
Data Sheet M2619, Rev. C
Maximum Ratings:
Characteristics Symbol Condition Max. Units
Peak Inverse Voltage VRWM - 45 V
10(Per leg) Max. Average Forward IF(AV) 50% duty cycle @TC =105°C,
rectangular wave form 20(Per device) A
Max. Peak One Cycle Non-
Repetiti ve Surge Current
(per leg)
IFSM
8.3 ms, half Sine pulse
125
A
Electrical Characteristics:
Characteristics Symbol Condition Max. Units
VF1 @ 5A, Puls e, TJ = 25 °C
@ 10A, Pulse, TJ = 25 °C 0.70
0.84 V
Max. Forward Voltage Drop
(per leg)* VF2 @ 5 A, Pulse, TJ = 125 °C 0.57 V
Max. Reverse Current at DC
condition (per leg) IR1 @VR = rated VR
TJ = 25 °C 1.0 mA
Max. Reverse Current (per
leg)* IR2 @VR = rated VR
TJ = 125 °C 15 mA
Max. Junction Capacitance
(per leg) CT @VR = 5V, TC = 25 °C
fSIG = 1MHz 190 pF
Typica l Series Inductance
(per leg) LS Measured lead to lead 5 mm from
package body 8.0 nH
Max. Voltage Rate of Change dv/dt - 10,000 V/µs
Clip mounting, the epoxy body
away from the hea tsink edge by
more than 0.110" along t he lead
direction.
4500
Clip mounting, the epoxy body is
inside the heatsink. 3500
RSM Isolation Vol ta ge
(t = 1.0 second, R. H. < =30%,
TA = 25 °C)
VISO
Screw mounting, the epoxy body
is inside the heatsi nk. 1500
V
* Pulse Width < 300µs, Duty Cycle <2%
Thermal -Mec hanic al Spe cif ica tions:
Characteristics Symbol Condition Specification Units
Max. Junction Temperature TJ - -55 to +150
°C
Max. Storage Temperature Tstg - -55 to +150
°C
Maximum Thermal
Resistance Junction to Case
(per leg)
RθJC DC operation 3.5 °C/W
Approximate Weight wt - 2 g
Mounting Torque TM - 6(Min.)
12(Max.) Kg-cm
Case Style ITO-220AB
SENSITRON
SEMICONDUCTOR
• 221 West Industry Court Deer Park, NY 11729-4681 (631) 586-7600 FAX (631) 242-9798 •
• World Wide Web Site - http://www.sensitron.com • E-Mail Address - sales@sensitron.com •
MBRF1045CT
Technical Data
Data Sheet M2619, Rev. C
DISCLAIMER:
1- The information given herein, includi ng the specifications and dimensions, is subject to change without prior not ice to improve product
characteristics. Before ordering, purchasers are advised to contact the Sensitron Semiconductor sales department for the latest version
of the datasheet(s).
2- In cases where extremely high reliabilit y is required (such as use in nuclear power control, aerospace and aviation, traffi c equipment,
medical equipment , and safety equipment) , safety should be ensured by using semiconductor devices that feature assured safety or by
means of users’ fail-safe precautions or other arrangement .
3- In no event shall Sensitron Semiconductor be liable for any damages that may result from an accident or any other cause during
operation of the user’s units according to the datasheet(s). Sensitron Semiconductor assumes no responsibility for any intellectual
property claims or any other problems that may result from applications of information, products or circuits described in the datasheets.
4- In no event shall Sensitron Semiconductor be liable for any fai lure in a semiconductor device or any secondary damage resulting from
use at a value exceeding the absolute maximum rating.
5- No license is granted by the datasheet(s) under any patents or other rights of any third party or Sensitron Semiconductor.
6- The datasheet(s) may not be reproduced or duplicated, in any form, in whole or part, without the ex pressed writ ten permission of
Sensitron Semiconductor.
7- The products (technologies) described in the datasheet(s) are not to be provided to any party whose purpose in their application will
hinder maintenance of international peace and safety nor are they to be applied to that purpose by their direct purchasers or any thi rd
party. When exporting these products (technologies), the necessary procedures are to be taken in accordance with related laws and
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