NPN GENERAL PURPOSE TABLE1 NPN SILICON PLANAR GENERAL PURPOSE TRANSISTORS The devices shown in this table are general purpose transistors designed for small and medium signal, low and medium power amplification from D.C. to radio frequencies in Commercial, Industrial and Military equipments. These transistors are particularly suitable for use as Audio Frequency Amplifiers, Driver and Output Stages, Oscillators and General Purpose Switches. The devices are listed in order of decreasing Breakdown Voltages (Vcg and Vcgo), decreasing Collector Current (Ic), Power Dissipation (Pro) etc. Max Max Yeetsae) Fe at Me r Prot Type |VcBIVcEO| Ic lat Tamb| Package | Comple- le Ip |Min|Max] Ic le [=26C ment Vv Vv mA Vv mA | mA mA [MHz] mA | mW 2792 120/100 | 1000] 1 -2 200] 20 65 | 200] 200} 60} 50 | 1000 TO-39 _ zT91 120} 100 | 1000] 1 -2 200| 20 40/120] 200] 60] 50) 1000 | TO-39 _ 2N2405 | 120} 90 | 1000/0.2 50 5 60 | 200| 150}; | | 1000 TO-39 _ Z2T93 120] 80 | 1000|0-5 150| 15 40|}120)150] 60} 50] 1000 | TO-39 - 2N1893 [120] 80 500/71 +2 50 5 40)1201150)} | 800 TO-39 _ 2N2102 [120] 65 }|1000)0-5 150) 15 40/120/150) 60) 50) 1000 TO-39 | 2N4036 ZT88 100| 80 500] 0-2 50 5 75/170} 10} 200) 10 300 TO-18 _ ZT86 100] 80 500] 0-2 50 5 38} 85) 10/200) 10 300 | TO-18 _ BFX85 100| 60 |1000;0-35) 150} 15 70) |150| 50] 50] 800 TO-39 _ BFX84 100] 60 |1000)0-35) 150) 15 30} |150} 50) 50| 800] TO-39 _ BC141 100| 60 |1000/1-0 | 1000] 100 | 40]250/100] 50] 50 | 3700t) TO-39 | BC161 BC140 80] 40 |1000]1-0 |1000] 100 | 40] 250/100] 50) 50 | 3700f]} TO-39 | BC160 BFY50 80] 35 | 1000}0-2 150) 15 301 1150] 60] 50 800 | TO-39 2N1613 75) 50 )1000]1 -5 150| 15 40/120/150| 60] 50 800 TO-39 _ 2N1711 75| 50 | 1000] 1-5 150} 15 |100/300)150) 70] 50 800 | TO-39 ZT89 70| 70 500] 0-2 50 5 75| 250] 10] 200] 10 300 | TO-18 | ZT189 ZT90 60! 60 | 1000,0-7 200] 20 60 | 200} 200] 60; 50 | 1000 TO-39 | 2T211 ZT95 60| 60 | 1000] 1 -2 200) 20 30| 200] 350} 60) 50 | 1000 TO-39 | 27211 BCY65E 60| 60 100] 0-35 10] 0-25) 120} 460 2/125] 10 | 1000t]) TO-18 | BCY77 2N2270 60) 45 |1000/0-9 160] 15 50| 200/150] 60] 50 ; 1000 TO-39 _ ZT94 60| 45 |1000|0-7 200} 20 20| }] 10} 60] 50 | 1000 | TO-39 | ZT210 ZT83 60! 45 500| 0-2 50 5 38] 85} 10} 200] 10 300 TO-18 | 27183 2784 60} 45 600/0-2 50 5 75|170} 10] 200] 10 300 | TO-18 | 27184 TAt Toagg= 45C Continued on page 9NPN GENERAL PURPOSE TABLE1 NPN SILICON PLANAR GENERAL PURPOSE TRANSISTORS The devices shown in this table are general purpose transistors designed for smail and medium signal, low and medium power amplification from D.C. to radio frequencies in Commercial, Industrial and Military equipments. These transistors are particularly suitable for use as Audio Frequency Amplifiers, Driver and Output Stages, Oscillators and General Purpose Switches. The devices are listed in order of decreasing Breakdown Voltages (Vcg and Vceo), decreasing Collector Current (Ic), Power Dissipation (Prot) etc. Type |Vce|Vceo! Ic -- at Tamb| Package | Comple- le Ip | Min|}Max| Ic le |=25C ment Viv mA Vv mA | mA mA {|MHzi mA} mW 2T92 120}100 }1000)1-2 | 200] 20 | 65] 200) 200] 65] 50 | 1000 TO39 2791 120} 100 | 1000} 1 -2 200] 20 40/120] 200] 60] 50] 1000 TO39 _ 2N2405 |120]} 90 | 1000/0-2 50 5 60 | 200/150; | | 1000 TO39 _ ZT93 120} 80 | 1000)0-5 150| 15 40|120|/150| 60] 50/ 1000 TO39 _ 2N1893 {120| 80 | 500)}1-2 50} 5 | 40/120)150;/ | |] 800] TO39 _ 2N2102 |120] 65 |1000/0-5 150] 15 | 40/120/150| 60; 50) 1000; TO39 2N4036 BFX85 100} 100 |1000]0-35)} 150; 15 70|- |150] 50] 50; 800 TO39 BFX84 100] 100 |1000/0-35] 150) 15 | 30) |150; 50] 50] 800] TO39 - ZT88 100| 80 500/ 0.2 50 5 751170] 10] 200] 10 300 TO18 _ 2T86 100; 80 | 500/0-2 50| 5 | 38] 85] 10/200/ 10] 300; TO18 BC141 100] 60 |1000)1-0 |1000} 100 ; 40/ 250/100} 50] 50 | 3700t| TO39 BC161 BC140 80} 40 | 1000/1-0 | 1000) 100 | 40) 250) 100/ 50/ 50 | 3700T; TO39 BC160 BFY50 80} 35 | 1000)0-2 150; 15 30] |150} 60] 50 800 TO39 _ 2N1613 75| 50 |1000;1 -5 150); 15 | 40/120/150} 60/ 50] 800] TO39 2N1711 75} 50 | 1000] 1-5 150} 15 | 100| 300/150] 70] 50 800 TO39 ZT89 70| 70 500] 0-2 50 5 75| 250} 10] 200] 10 300 TO18 27189 2T90 60| 60 |1000|/0-7 | 200] 20 | 60/200) 200; 60} 50} 1000] TO39 27211 ZT95 60| 60 {1000;1-2 | 200) 20 | 30/200/350|] GO| 50} 1000 | TO39 27211 BCY65E | 60| 60 | 100]0-35) 10/0-25/120)460| 2/125] 10 | 1000t] 1TO18 BCY77 2N2270 60| 45 | 1000|/0-9 150] 15 50|200|150] 60/] 50} 1000 TO39 _ ZT94 60| 45 | 1000/0-.7 200| 20 20} | 10] 60] 50 | 1000 TO39 ZT210 ZT83 60/ 45 500; 0-2 50 5 38| 85] 10; 200] 10 300 TO18 27183 2T84 60; 45 500/0-2 50 5 75/170; 10|] 200] 10 300 TO18 27184 TAtTeggg 45C Continued on page 9NPN SWITCHING TABLE 3 NPN SILICON PLANAR MEDIUM AND HIGH SPEED SWITCHING TRANSISTORS The devices shown in this table are characterised for general rnedium voltage, medium and high speed switching applications in Commercial, Industrial and Military equipments. The devices are listed in order of decreasing Breakdown Voltage (Vceq), decreasing Collector Current (Ic), Power Dissipation (Prot) etc. Max VcEk(sat) Hre fr Min Switching Times Max at at at (Max) at Type |VcEo] Ic Package] Comple- le ip Min | Max] le lo | ton | tot le ment Vv mA v mA | mA mA | MHz{ mA] ns ns | mA 2N3262 | 100 |1500/0-6 |1000| 100 | 40] | 500} |~ | 40 750 | 1000} TO-39 a ZT86 80 | 500]/0-2 50 5 38 85 10 | 200 | 10 50*| 170*| 20 | TO-18 _ ZT88 80 | 500/0.2 50 5 75 | 170 10 | 200 | 10 50*| 170*| 20 | TO-18 _ ZT89 70 | 500]0.2 50 5 75 | 250 10 ; 200 | 10 50*/ 170*| 20 | TO-18/ZT189 2N2102 65 |1000/0-5 | 150 15 | 40] 120] 150] 60] 50 (jnote 1]) TO-39 | 2N4036 BFX85 60 | 1000] 0-35} 150 15 70 | | 150 50 | 50 55*| 360*| 150 | TO-39 _ BFX84 60 | 1000] 0-35] 150 15 30 | | 150 50 | 50 55*| 360*| 150 | TO-39 - BCY65E 60 | 100]0-35] 10 ]0-25) 120 | 460 2 | 125 | 10 | 150 | 800 10 | TO-18]BCY77 2N1613 50 ;1000/1-5 | 150 15 40 | 120 | 150 60 | 50 (jnote 1) TO-39 - 2N2270 45 |1000|/0-9 | 150 15 50 | 200 | 150 60 | 50 (Inote 11) TO-39 2T83 45 | 500/0-2 50 5 38 | 85 10 | 200 | 10 50*| 170*| 20 | TO-18 | ZT183 ZT84 45 | 500/0-2 50 5 75 | 170 10 | 200 | 10] 50*| 170*/ 20] TO-18;2T184 BCY59 45 | 200;0-35| 10 )0-25) 120 | 630 2 125 | 10 | 150 | 800 10 | TO-18|BCY79 2N2218A} 40 | 800}0-3 | 150 15 | 40 | 120] 150 | 250 | 20 | 35 | 285 | 150 | TO-39)/2N2904A 2N2219A| 40] 800/0-3 | 150 15 | 100 | 300 | 150 | 300 | 20] 35 | 285 | 150 | TO-39| 2N2905A 2N2221A| 40] 800/0-3 | 150 15 40 | 120 } 150 | 250 | 20 35 | 285 | 150 | TO-18| 2N2906A 2N2222A| 40 | 800/0-3 | 150 15 | 100 | 300 | 150 | 300 | 20] 35 | 285 ; 150 | TO-18|2N2907A BFY50 35 |1000/0-2 | 150 15 30 | | 150 60 | 50 | 55*| 360*, 150 | TO-39 BFX86 35 | 1000] 0-35; 150 15 70 | | 150 50 | 50 | 55*) 360*| 150 | TO-39 _ 2781 35 | 500/0-2 10 2] 38 | 162 10 | 200 | 10 50*| 170*| 20 | TO-18|ZT181 ZT82 35 | 500/0-2 10 2 75 | 250 10 | 200 | 10 50*| 170*| 20 | TO-18 | ZT182 2N3512 35) |0-4 | 150] 7:5 10; | 500} |] 30] 45] 150 | TO-39 _ BCY58 32 | 200/0-35| 10 |0-25] 120 | 630 2) 125 | 10 | 150 | 800 10 | TO-18}) BCY78 * Typical Note 1 trot = 30ns Continued on page 12 11NPN SWITCHING TABLE 3 NPN SILICON PLANAR MEDIUM AND HIGH SPEED SWITCHING TRANSISTORS The devices shown in this table are characterised for general medium voltage, medium and high speed switching applications in Commercial, Industrial and Military equipments. The devices are listed in order of decreasing Breakdown Voltage (Vceo), decreasing Collector Current (Ic), Power Dissipation (Pot) etc. Max VcE(sat) hre fy Min Switching Times Max at at at (Max) at Type |VcEo! Ice Package| Comple- le Ip | Min | Max] Ic le | ton | tose le ment Vv mA Vv mA | mA mA | MHz| mA] ns ns mA 2N3262 | 100 | 1500|0-6& | 1000! 100 40; ; 500} | 40 | 750 | 1000/ TO39 ~ BFX85 100 | 1000/0 -35! 150 15 70 | | 150 50 | 50 55*| 360% 150 | TO39 _ BFX84 100 | 1000; 0-35] 150 15 30; | 150 50 | 50 55*| 360*/ 150 | TO39 ZT86 80 | 500/0-2 50 5 38 85 10 | 200 | 10 50*, 170%; 20 | TO18 _ ZT88 80 | 500/0-2 50 5 76 | 170 10 | 200 | 10 50*| 170*, 20 | TO18 ~ 2T89 70 | 500;0-2 50 5 75 | 250 10 | 200 | 10 50*| 170%; 20 | TO18 |ZT189 2N2102 65 }1000/0-5 | 150 15 40 } 120 | 150 60 | 50 (jnote 1)) TO38 | 2N4036 BCY65E 60 | 100/0-35; 10 /;0-25|] 120 | 460 2 | 125 | 10 |; 150 | 800 10 | TO18 | BCY77 2N1613 50 |1000/1-5 | 150 15 40 | 120 | 150 60 | 50 (jnote 1]) TO39 _ 2N2270 45 |1000/0-9 | 150 15 50 | 200 | 150 60 | 50 (jnote 1]) TO39 2783 45 | 500/0-2 50 5 38 85 10 | 200 | 10 50*| 170*| 20) TO18 |2ZT183 ZT84 45) 500 50 5 76 | 170 10 | 200 | 10 50*) 170*) 20 | 1018 |27184 nv BCY59 45 } 200 10 |0-25] 120 | 630 2} 125 | 10 | 150 | 800 10; TO18 | BCY79 a ai BFX86 40 | 1000 150 15 70 | | 150 50 | 50 55*| 360*| 150 | TO39 o a 2N2218A| 40] 800 150 15 40 | 120 | 150 | 250 | 20 35 | 285 |} 150 | TO39 | 2N2904A 150 15 | 100 | 300 | 150 | 300 | 20 35 | 285 | 150 | TO39 | 2N2905A 150 15 40 | 120 | 150 | 250 | 20 35 } 285 | 150 | TO18 | 2N2906A 150 15 | 100 | 300 | 150 | 300 | 20 35 | 285 | 150 | TO18 | 2N2907A oO 0 9 0 0 0 2N2219A! 40 {| 800/0 2N2221A| 40) 800)0 2N2222A| 40] 800/0 BFY50 35 11000; 0 150 15 30 |] | 150 60 | 50 55*) 360%) 150 | TO39 2781 35 | 500/0 10 2 38 | 162 10 | 200 | 10 50*, 170*) 20 | TO18 |27181 ZT82 35 | 5001/0 10 2 75 | 250 10 | 200 | 10 50*) 170*| 20 | TO18 | ZT182 0 0 2N3512 35; BRR NR & B W& 150 | 7-5 10} | 500} | -j) 30 45 } 150 ) TO39 BCY58 32 | 200/0-35| 10 /)0-25) 120 | 630 2 | 125 } 10 | 150 | 800 10 | TO18 | BCY78 * Typical Note 1 teot = 3Ons Continued on page 12 11