AP01L60T Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET Low Gate Charge D Fast Switching Characteristics Simple Drive Requirement BVDSS 600V RDS(ON) 12 ID G 160mA S Description Advanced Power MOSFETs utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely efficient and cost-effectiveness device. The TO-92 package is universally used for all commercial-industrial applications. G D TO-92 S Absolute Maximum Ratings Symbol Parameter Rating Units VDS Drain-Source Voltage 600 V VGS Gate-Source Voltage 30 V ID@TA=25 Continuous Drain Current, VGS @ 10V 160 mA ID@TA=100 Continuous Drain Current, VGS @ 10V 100 mA 1 IDM Pulsed Drain Current 300 mA PD@TC=25 Total Power Dissipation 0.83 W TSTG Storage Temperature Range -55 to 150 TJ Operating Junction Temperature Range -55 to 150 Thermal Data Symbol Rthj-a Parameter Thermal Resistance Junction-ambient Data & specifications subject to change without notice Max. Value Unit 150 /W 200530031 AP01L60T Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. 600 - - V - 0.8 - V/ VGS=10V, ID=0.5A - - 12 VDS=VGS, ID=250uA 2 - 4 V VDS=10V, ID=0.5A - 0.8 - S VDS=600V, VGS=0V - - 10 uA Drain-Source Leakage Current (Tj=150 C) VDS=480V, VGS=0V - - 100 uA Gate-Source Leakage VGS= 30V - - 100 nA ID=1A - 4.0 - nC BVDSS Drain-Source Breakdown Voltage BVDSS/Tj Breakdown Voltage Temperature Coefficient Reference to 25, ID=1mA RDS(ON) Static Drain-Source On-Resistance VGS(th) Gate Threshold Voltage gfs Forward Transconductance o IDSS Drain-Source Leakage Current (Tj=25 C) o IGSS 3 VGS=0V, ID=1mA 2 Max. Units Qg Total Gate Charge Qgs Gate-Source Charge VDS=480V - 1.0 - nC Qgd Gate-Drain ("Miller") Charge VGS=10V - 1.1 - nC VDD=300V - 6.6 - ns 3 td(on) Turn-on Delay Time tr Rise Time ID=1A - 5.0 - ns td(off) Turn-off Delay Time RG=3.3,VGS=10V - 11.7 - ns tf Fall Time RD=300 - 9.2 - ns Ciss Input Capacitance VGS=0V - 170 - pF Coss Output Capacitance VDS=25V - 30.7 - pF Crss Reverse Transfer Capacitance f=1.0MHz - 5.1 - pF Min. Typ. VD=VG=0V , VS=1.2V - - 160 mA IS=160mA, VGS=0V - - 1.2 V Source-Drain Diode Symbol IS VSD Parameter Continuous Source Current ( Body Diode ) 3 Forward On Voltage Notes: 1.Pulse width limited by safe operating area. 3.Pulse width <300us , duty cycle <2%. Test Conditions Max. Units AP01L60T 1 1.5 10V 6.0V 5.5V 5.0V ID , Drain Current (A) T A =25 C 10V 5.0V T A =150 o C 0.75 ID , Drain Current (A) o 1 0.5 V GS =4.5V 4.5V 0.5 V GS =4.0V 0.25 0 0 0 12 24 36 0 10 20 30 40 V DS , Drain-to-Source Voltage (V) V DS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 1.2 2.8 I D =0.5A V GS =10V 2.4 1.1 Normalized RDS(ON) Normalized BVDSS (V) 2 1 1.6 1.2 0.8 0.9 0.4 0 0.8 -50 0 50 100 T j , Junction Temperature ( o -50 150 Fig 3. Normalized BV DSS v.s. Junction Temperature 100 150 1 3 VGS(th) (V) 4 IS (A) 50 Fig 4. Normalized On-Resistance v.s. Junction Temperature 10 T j = 25 o C T j = 150 o C 0 T j , Junction Temperature ( o C ) C) 0.1 2 0.01 1 0 0.4 0.8 V SD , Source-to-Drain Voltage (V) Fig 5. Forward Characteristic of Reverse Diode 1.2 -50 0 50 100 T j , Junction Temperature ( o C ) Fig 6. Gate Threshold Voltage v.s. Junction Temperature 150 AP01L60T f=1.0MHz 1000 I D =1.0A V DS =480V 12 Ciss 100 C (pF) VGS , Gate to Source Voltage (V) 16 8 Coss 10 4 Crss 0 1 0 1.5 3 4.5 6 1 10 Fig 7. Gate Charge Characteristics 28 Fig 8. Typical Capacitance Characteristics 1.2 40 0.9 30 PD (W) ID , Drain Current (A) 19 V DS , Drain-to-Source Voltage (V) Q G , Total Gate Charge (nC) 0.6 0.3 20 10 0 0 25 50 75 100 125 150 0 50 100 150 o T A , Case Temperature ( o C ) T A , Case Temperature ( C) Fig 9. Maximum Drain Current v.s. Fig 10. Typical Power Dissipation Case Temperature VG VDS 90% QG 10V QGS QGD 10% VGS td(on) tr td(off) tf Fig 11. Switching Time Waveform Charge Fig 12. Gate Charge Waveform Q