Advanced Power N-CHANNEL ENHANCEMENT MODE
Electronics Corp. POWER MOSFET
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▼ Low Gate Charge BVDSS 600V
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▼ Fast Switching Characteristics RDS(ON) 12Ω
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▼ Simple Drive Requirement ID160mA
Description
Absolute Maximum Ratings
Symbol Units
VDS Drain-Source Voltage V
VGS Gate-Source Voltage V
ID@TA=25℃Continuous Drain Current, VGS @ 10V mA
ID@TA=100℃Continuous Drain Current, VGS @ 10V mA
IDM Pulsed Drain Current1mA
PD@TC=25℃Total Power Dissipation W
TSTG ℃
TJOperating Junction Temperature Range ℃
Thermal Data
Symbol Value Unit
Rthj-a Thermal Resistance Junction-ambient Max. 150 ℃/W
Data & specifications subject to change without notice 200530031
Storage Temperature Range -55 to 150
300
0.83
100
Parameter Rating
600
AP01L60T
-55 to 150
Parameter
160
± 30
G
D
S
TO-92
G
DS
Advanced Power MOSFETs utilized advanced processing techniques to
achieve the lowest possible on-resistance, extremely efficient and
cost-effectiveness device.
The TO-92 package is universally used for all commercial-industrial
applications.
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol Parameter Test Conditions Min. Typ. Max. Units
BVDSS Drain-Source Breakdown Voltage VGS=0V, ID=1mA 600 - - V
ΔBVDSS/ΔTjBreakdown Voltage Temperature Coefficient Reference to 25℃, ID=1mA - 0.8 - V/℃
RDS(ON) Static Drain-Source On-Resistance2VGS=10V, ID=0.5A - - 12 Ω
VGS(th) Gate Threshold Voltage VDS=VGS, ID=250uA 2 - 4 V
gfs Forward Transconductance VDS=10V, ID=0.5A - 0.8 - S
IDSS Drain-Source Leakage Current (Tj=25oC) VDS=600V, VGS=0V - - 10 uA
Drain-Source Leakage Current (Tj=150oC) VDS=480V, VGS=0V - - 100 uA
IGSS Gate-Source Leakage VGS=--
nA
QgTotal Gate Charge3ID=1A - 4.0 - nC
Qgs Gate-Source Charge VDS=480V - 1.0 - nC
Qgd Gate-Drain ("Miller") Charge VGS=10V - 1.1 - nC
td(on) Turn-on Delay Time3VDD=300V - 6.6 - ns
trRise Time ID=1A - 5.0 - ns
td(off) Turn-off Delay Time RG=3.3Ω,VGS=10V - 11.7 - ns
tfFall Time RD=300Ω- 9.2 - ns
Ciss Input Capacitance VGS=0V - 170 - pF
Coss Output Capacitance VDS=25V - 30.7 - pF
Crss Reverse Transfer Capacitance f=1.0MHz - 5.1 - pF
Source-Drain Diode
Symbol Parameter Test Conditions Min. Typ. Max. Units
ISContinuous Source Current ( Body Diode ) VD=VG=0V , VS=1.2V - - 160 mA
VSD Forward On Voltage3IS=160mA, VGS=0V - - 1.2 V
Notes:
1.Pulse width limited by safe operating area.
3.Pulse width <300us , duty cycle <2%.
AP01L60T
± 30V ±100
AP01L60
T
Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics
Fig 3. Normalized BVDSS v.s. Junction Fig 4. Normalized On-Resistance
Temperature v.s. Junction Temperature
Fig 5. Forward Characteristic of Fig 6. Gate Threshold Voltage v.s.
Reverse Diode Junction Temperature
0
0.4
0.8
1.2
1.6
2
2.4
2.8
-50 0 50 100 150
Tj , Junction Temperature ( oC )
Normalized RDS(ON)
ID=0.5A
VGS =10V
0
0.5
1
1.5
0122436
VDS , Drain-to-Source Voltage (V)
ID , Drain Current (A)
TA=25 oC
10V
6.0V
5.5V
5.0V
VGS =4.5V
0
0.25
0.5
0.75
1
0 10203040
VDS , Drain-to-Source Voltage (V)
ID , Drain Current (A)
TA=150 oC 10V
5.0V
4.5V
VGS =4.0V
0.01
0.1
1
10
0 0.4 0.8 1.2
VSD , Source-to-Drain Voltage (V)
IS (A)
Tj = 150 oCTj = 25 oC
1
2
3
4
-50 0 50 100 150
Tj , Junction Temperature ( o C )
VGS(th) (V)
0.8
0.9
1
1.1
1.2
-50 0 50 100 150
Tj , Junction Temperature ( oC)
Normalized BVDSS (V)
AP01L60
T
Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics
Fig 9. Maximum Drain Current v.s. Fig 10. Typical Power Dissipation
Case Temperature
Fig 11. Switching Time Waveform Fig 12. Gate Charge Waveform
0
4
8
12
16
0 1.5 3 4.5 6
QG , Total Gate Charge (nC)
VGS , Gate to Source Voltage (V)
I
D=1.0A
VDS =480V
1
10
100
1000
1101928
VDS , Drain-to-Source Voltage (V)
C (pF)
f=1.0MHz
Ciss
Coss
Crss
td(on) trtd(off)tf
VDS
VGS
10%
90%
Q
VG
10V
QGS QGD
QG
Charge
0
10
20
30
40
0 50 100 150
TA , Case Temperature ( oC )
PD (W)
0
0.3
0.6
0.9
1.2
25 50 75 100 125 150
TA , Case Temperature ( oC )
ID , Drain Current (A)
