2SA1215 Silicon PNP Epitaxial Planar Transistor (Complement to type 2SC2921) Electrical Characteristics ICBO 2SA1215 Unit VCB=-160V -100max A 36.40.3 24.40.2 VEB=-5V -100max A IC=-25mA -160min V VCEO -160 V IEBO VEBO -5 V V(BR)CEO IC -15 A hFE VCE=-4V, IC=-5A 50min IB -4 A VCE(sat) IC=-5A, IB=-0.5A -2.0max V PC 150(Tc=25C) W fT VCE=-12V, IE=2A 50typ MHz Tj 150 C COB VCB=-10V, f=1MHz 400typ pF -55 to +150 C hFE Rank O(50 to 100), P(70 to 140), Y(90 to 180) 2-o3.20.1 7 a b 5.450.1 VCC (V) RL () IC (A) VB2 (V) IB1 (mA) IB2 (mA) ton (s) tstg (s) tf (s) -60 12 -5 5 -500 500 0.25typ 0.85typ 0.2typ 0 -1 0 -2 -3 0 -4 0 -0.2 -0.4 -0.6 -0.8 (V C E =-4V) 200 25C 100 -30C 50 30 -0.02 -5 -10 -15 Transient Thermal Resistance DC Curr ent Gain h FE Typ 50 Collector Current I C (A) -0.1 -0.5 ) p) mp) e Te -2 -1 -5 -10 -15 em 2 1 0.5 0.1 1 10 Collector Current I C (A) f T - I E Characteristics (Typical) 100 1000 2000 Time t(ms) Safe Operating Area (Single Pulse) P c - T a Derating (V C E =-12V) 160 10 m C -5 si nk Without Heatsink Natural Cooling at -0.5 80 he -1 120 ite 20 D fin 40 -10 In Collector Curr ent I C (A) p ith Ty s 60 W Ma xim um Powe r Dissipat io n P C (W) -40 80 Cut- off F req uency f T ( MH Z ) DC Curr ent Gain h FE 125C -1 -1 j-a - t Characteristics h FE - I C Temperature Characteristics (Typical) 200 -0.5 0 Base-Emittor Voltage V B E (V) (V C E =-4V) -0.1 0 -1.0 Base Current I B (A) h FE - I C Characteristics (Typical) 10 -0.02 eT -5A Collector-Emitter Voltage V C E (V) 100 -5 Cas I C =-10A Cas -1 C ( I B =-20mA Weight : Approx 18.4g a. Type No. b. Lot No. -10 C ( -50mA -4 E (V C E =-4V) 125 -10 0mA -8 -2 j- a ( C/W) Collector Current I C (A) mA -1 50 m A C -15 Collector Current I C (A) -200 -12 3.0 +0.3 -0.1 I C - V BE Temperature Characteristics (Typical) -3 Collector-Emitter Saturation Voltage V C E (s at) (V ) A A A m A 0m 0m 0m 0m 50 -60 -50 -40 -30 -7 A 0.65 +0.2 -0.1 5.450.1 B V CE ( sat ) - I B Characteristics (Typical) -16 2 3 1.05 +0.2 -0.1 Typical Switching Characteristics (Common Emitter) I C - V CE Characteristics (Typical) 9 21.40.3 20.0min Tstg 6.00.2 2.1 -30 V External Dimensions MT-200 (Ta=25C) Conditions emp -160 VCBO Symbol se T Unit (Ca 2SA1215 25C Absolute maximum ratings (Ta=25C) Symbol Application : Audio and General Purpose 4.0max LAPT 40 Without Heatsink 0 0.02 0.1 1 Emitter Current I E (A) 12 10 -0.2 -2 -10 -100 Collector-Emitter Voltage V C E (V) -200 5 0 0 25 50 75 100 125 Ambient Temperature Ta(C) 150