VTP Process Photodiodes VTP1232H PACKAGE DIMENSIONS inch (mm) (Also available in infrared transmitting visible blocking version) PRODUCT DESCRIPTION CASE 26 T-13/4 CHIP ACTIVE AREA: .0036 in2 (2.326 mm2) ABSOLUTE MAXIMUM RATINGS This photodiode features the largest detection area available in a clear, endlooking T-13/4 package. Combined with excellent dark current, it can fulfill the demands of many difficult applications. Storage Temperature: Operating Temperature: -40C to 100C -40C to 100C RoHS Compliant ELECTRO-OPTICAL CHARACTERISTICS @ 25C (See also VTP curves, pages 45-46) SYMBOL CHARACTERISTIC VTP1232H TEST CONDITIONS Min. Short Circuit Current H = 100 fc, 2850 K ISC Temperature Coefficient 2850 K Re Responsivity 880 nm 0.06 VOC Open Circuit Voltage H = 100 fc, 2850 K .42 VOC Temperature Coefficient 2850 K ID Dark Current H = 0, VR = 10 V CJ Junction Capacitance H = 0, V = 0 V ISC TC ISC TC VOC range Spectral Application Range p Spectral Response - Peak SR Sensitivity Typ. UNITS Max. 100 A 0.20 %/C 0.076 A/(W/cm2) -2.0 mV/C mV 25 .18 400 @ Peak PerkinElmer Optoelectronics, 22001 Dumberry, Vaudreuil, QC, Canada J7V 8P7 52 nA .30 nF 1100 nm 920 nm 0.60 A/W Phone: 877-734-6786 Fax: 450-424-3413 www.perkinelmer.com/opto