ISOCOM COMPONENTS LTD
Unit 25B, Park View Road West,
Park View Industrial Estate, Brenda Road
Hartlepool, Cleveland, TS25 1YD
Tel: (01429) 863609 Fax :(01429) 863581
7/12/00
DB92205-AAS/A2
NON BASE LEAD
OPTICALLY COUPLED ISOLATOR
PHOTODARLINGTON OUTPUT
ISPD60, 61, 62, 63, 64, 65
DESCRIPTION
The ISPD6_ series of optically coupled
isolators consist of an infrared light emitting
diode and NPN silicon photodarlington in a
standard 6pin dual in line plastic package with
the base pin unconnected.
FEATURES
lOptions :-
10mm lead spread - add G after part no.
Surface mount - add SM after part no.
Tape&reel - add SMT&R after part no.
lHigh Current Transfer Ratio (500% min)
lHigh Isolation Voltage (5.3kVRMS ,7.5kVPK )
l Basepin unconnected for improved noise
immunity in high EMI environment
lHigh sensitivity to low input drive current
lCustom electrical selections available
APPLICATIONS
lComputer terminals
lIndustrial systems controllers
lMeasuring instruments
lSignal transmission between systems of
different potentials and impedances
ABSOLUTE MAXIMUM RATINGS
(25°C unless otherwise specified)
Storage Temperature -55°C to + 150°C
Operating Temperature -55°C to + 100°C
Lead Soldering Temperature
(1/16 inch (1.6mm) from case for 10 secs) 260°C
INPUT DIODE
Forward Current 60mA
Reverse Voltage 5V
Power Dissipation 120mW
OUTPUT TRANSISTOR
Collector-emitter Voltage BVCEO 30V
Emitter-collector Voltage BVECO 5V
Power Dissipation 150mW
POWER DISSIPATION
Total Power Dissipation 250mW
(derate linearly 3.3mW/°C above 25°C)
APPROVALS
lUL recognised, File No. E91231 1
3
2
4
6
5
Dimensions in mm
2.54
6.9
6.1
8.9
max.
1.4
0.9 2.54
min.
5.3
max.
15°
max.
0.25
0.48
8.3 max.
OPTION G
8.3 max
SURFACE MOUNT
OPTION SM
10.16
10.2
9.5
0.26
1.2
0.6 1.4
0.9
ISOCOM INC
1024 S. Greenville Ave, Suite 240,
Allen, TX 75002 USA
Tel: (214) 495-0755 Fax: (214) 495-0901
e-mail info@isocom.com
http://www.isocom.com
PARAMETER MIN TYP MAX UNITS TEST CONDITION
Input Forward Voltage (VF)1.2 1.5 VIF = 10mA
Reverse Voltage (VR)3VIR = 10µA
Reverse Current (IR)10 µAVR = 3V
Output Collector-emitter Breakdown (BVCEO)30 VIC = 1mA (note 2)
Emitter-collector Breakdown (BVECO)5VIE = 100µA
Collector-emitter Dark Current (ICEO)100 nΑVCE = 10V
Coupled Current Transfer Ratio (CTR) (Note 2)
ISPD60, ISPD63 100 %1mA IF , 2V VCE
ISPD61, ISPD64 500 %1mA IF , 2V VCE
ISPD62, ISPD65 1000 %1mA IF , 2V VCE
Collector-emitter Saturation VoltageVCE(SAT) 1.0 V10mA IF , 10mA IC
Input to Output Isolation Voltage VISO 5300 VRMS (note 1)
7500 VPK (note 1)
Input-output Isolation Resistance RISO 1011 VIO = 500V (note 1)
Output Rise Time tr 60 µsVCC= 10V, IC= 2mA,
Output Fall Time tf 60 µsRL = 100 , fig.1
Delay Time td 10 µs
Storage Time ts 3µs
ELECTRICAL CHARACTERISTICS ( TA = 25°C Unless otherwise noted )
Note 1 Measured with input leads shorted together and output leads shorted together.
Note 2 Special Selections are available on request. Please consult the factory.
DB92205-AAS/A2
7/12/00
Input
Output 10%
90%
10%
90%
toff
tr
ton
tf
Output
VCC = 10V
Input
FIGURE 1
100
DB92205-AAS/A2
7/12/00
50
-30 0 25 50 75 100 125
Ambient temperature TA ( °C )
150
0
200
Collector power dissipation P C (mW)
Collector Power Dissipation vs.
Ambient Temperature
-30 0 25 50 75 100
Ambient temperature TA ( °C )
Collector-emitter saturation voltage V CE(SAT) (V)
Collector-emitter Saturation
Voltage vs. Ambient Temperature
100
0
0.2
0.4
0.6
0.8
1.0
1.2 IF = 10mA
IC = 10mA
0
0.5
1.0
1.5
Normalized Current Transfer
Ratio vs. Ambient Temperature
Normalized current transfer ratio
-30 0 25 50 75 100
Ambient temperature TA ( °C )
IF = 1mA
VCE = 2V
0
10
Current Transfer Ratio vs.
Forward Current
Forward current IF (mA)
Current transfer ratio CTR (%)
Collector Current vs. Collector-emitter Voltage
Collector-emitter voltage VCE ( V )
Collector current I C (mA)
0 1 2 3 4 5
0
20
40
60
80
100
2mA
5mA
0.1 0.2 0.5 1 2 5 10 20 50 100
10000
1000
100
VCE = 2V
TA = 25°C
IF = 1mA
TA = 25°C
40
4000
400
Ambient temperature TA ( °C )
60
30
20
10
0
40
50
-30 0 25 50 75 100 125
Forward Current vs. Ambient Temperature
Forward current I F (mA)
70
80
20