GaAs, HBT, MMIC, Low Phase Noise
Amplifier, 6 GHz to 14 GHz
Data Sheet
ADL8150
Rev. 0 Document Feedback
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FEATURES
OP1dB: 18 dBm (typical at 7 GHz to 12 GHz)
PSAT : 22 dBm (typical at 7 GHz to 12 GHz)
Gain: 12 dB (typical at 7 GHz to 12 GHz)
OIP3: 30 dBm typical
Phase noise: −172 dBc/Hz at 10 kHz offset
Supply voltage: 5 V at 74 mA
6-lead, 2 mm × 2 mm LFCSP
APPLICATIONS
Military and space
Test instrumentation
Communications
FUNCTIONAL BLOCK DIAGRAM
2
1
3
6
5
4
GND
NC
RF
IN
RF
OUT
/V
CC
NC
GND
25523-001
Figure 1.
GENERAL DESCRIPTION
The ADL8150 is a self biased gallium arsenide (GaAs),
monolithic microwave integrated circuit (MMIC), heterojunction
bipolar transistor (HBT), low phase noise amplifier that operates
from 6 GHz to 14 GHz. The amplifier provides 12 dB of typical
signal gain, 18 dBm output power at 1 dB gain compression
(OP1dB), and a typical output third-order intercept (OIP3) of
30 dBm. The amplifier requires 74 mA from a 5 V collector
supply voltage. The ADL8150 also features inputs and outputs
(I/Os) that are internally matched to 50 Ω, and facilitates
integration into multichip modules (MCMs).
Note that throughout this data sheet, multifunction pins, such
as RFOUT/VCC, are referred to either by the entire pin name or by
a single function of the pin, for example, RFOUT, when only that
function is relevant.
ADL8150 Data Sheet
Rev. 0 | Page 2 of 15
TABLE OF CONTENTS
Features .............................................................................................. 1
Applications ....................................................................................... 1
Functional Block Diagram .............................................................. 1
General Description ......................................................................... 1
Revision History ............................................................................... 2
Specifications ..................................................................................... 3
Frequency Range: 6 GHz to 7 GHz ............................................ 3
Frequency Range: 7 GHz to 12 GHz .......................................... 3
Frequency Range: 12 GHz to 14 GHz ........................................ 4
Absolute Maximum Ratings ............................................................ 5
Thermal Resistance ...................................................................... 5
Electrostatic Discharge (ESD) Ratings .......................................5
ESD Caution...................................................................................5
Pin Configuration and Function Descriptions ..............................6
Interface Schematics .....................................................................6
Typical Performance Characteristics ..............................................7
Theory of Operation ...................................................................... 13
Applications Information .............................................................. 14
Biasing Procedures ..................................................................... 14
Outline Dimensions ....................................................................... 15
Ordering Guide .......................................................................... 15
REVISION HISTORY
10/2020—Revision 0: Initial Version
Data Sheet ADL8150
Rev. 0 | Page 3 of 15
SPECIFICATIONS
FREQUENCY RANGE: 6 GHz TO 7 GHz
Collector bias voltage (VCC) = 5 V, supply current (ICQ) = 74 mA and TA = 25°C, unless otherwise noted.
Table 1.
Parameter Min Typ Max Unit Test Conditions/Comments
FREQUENCY RANGE 6 7 GHz
GAIN 8 10.5 dB
Gain Flatness ±1.0 dB
Gain Variation over Temperature 0.033 dB/°C
NOISE FIGURE 4.8 dB
PHASE NOISE −172 dBc/Hz Measurement taken at 10 kHz offset from carrier
RETURN LOSS
Input 2 dB
Output
14
dB
OUTPUT
OP1dB 15.5 17.5 dBm
Saturated Output Power (P
SAT
)
20.5
dBm
OIP3 30 dBm Measurement taken at output power (POUT) per
tone = 6 dBm
Output Second-Order Intercept (OIP2) 32 dBm Measurement taken at POUT per tone = 6 dBm
SUPPLY
ICQ 74 mA Self biased
VCC 3 5 6 V
FREQUENCY RANGE: 7 GHz TO 12 GHz
VCC = 5 V, ICQ = 74 mA and TA = 25°C, unless otherwise noted.
Table 2.
Parameter Min Typ Max Unit Test Conditions/Comments
FREQUENCY RANGE 7 12 GHz
GAIN 10 12 dB
Gain Flatness ±0.5 dB
Gain Variation over Temperature 0.024 dB/°C
NOISE FIGURE 3.6 dB
PHASE NOISE −172 dBc/Hz Measurement taken at 10 kHz offset from carrier
RETURN LOSS
Input 7.5 dB
Output
8
dB
OUTPUT
OP1dB 16 18 dBm
P
SAT
22
dBm
OIP3 30 dBm Measurement taken at POUT per tone = 6 dBm
OIP2 44.5 dBm Measurement taken at POUT per tone = 6 dBm
SUPPLY
ICQ 74 mA Self biased
VCC 3 5 6 V
ADL8150 Data Sheet
Rev. 0 | Page 4 of 15
FREQUENCY RANGE: 12 GHz TO 14 GHz
VCC = 5 V, ICQ = 74 mA and TA = 25°C, unless otherwise noted.
Table 3.
Parameter Min Typ Max Unit Test Conditions/Comments
FREQUENCY RANGE 12 14 GHz
GAIN 8 10.5 dB
Gain Flatness ±0.9 dB
Gain Variation over Temperature 0.034 dB/°C
NOISE FIGURE 3.8 dB
PHASE NOISE −172 dBc/Hz Measurement taken at 10 kHz offset from carrier
RETURN LOSS
Input 5 dB
Output 8 dB
OUTPUT
OP1dB 15.5 17.5 dBm
PSAT 21.5 dBm
OIP3 30 dBm Measurement taken at POUT per tone = 6 dBm
OIP2 60 Measurement taken at POUT per tone = 6 dBm
SUPPLY
ICQ 74 mA Self biased
VCC 3 5 6 V
Data Sheet ADL8150
Rev. 0 | Page 5 of 15
ABSOLUTE MAXIMUM RATINGS
Table 4.
Parameter Rating
Collector Bias Voltage (VCC) 6.5 V
Radio Frequency Input (RF
IN
) Power
25 dBm
Continuous Power Dissipation (PDISS), TA = 85°C
(Derate 15.9 mW/°C Above 85°C)
0.843 W
Temperature
Storage Range −65°C to +150°C
Operating Range −40°C to +85°C
Peak Reflow (Moisture Sensitivity Level
(MSL))1
260°C
Junction Temperature to Maintain
1,000,000 Hours Mean Time to Failure
(MTTF)
138°C
Nominal Junction Temperature (TA = 85°C,
VCC = 5 V, ICQ = 74 mA)
108.3°C
1 See the Ordering Guide for more information.
Stresses at or above those listed under Absolute Maximum
Ratings may cause permanent damage to the product. This is a
stress rating only; functional operation of the product at these
or any other conditions above those indicated in the operational
section of this specification is not implied. Operation beyond
the maximum operating conditions for extended periods may
affect product reliability.
THERMAL RESISTANCE
Thermal performance is directly linked to printed circuit board
(PCB) design and operating environment. Careful attention to
PCB thermal design is required.
θJC is the junction to case thermal resistance.
Table 5. Thermal Resistance
Package Type θJC Unit
CP-6-12 62.9 °C/W
ELECTROSTATIC DISCHARGE (ESD) RATINGS
The following ESD information is provided for handling of
ESD-sensitive devices in an ESD protected area only.
Human body model (HBM) per ANSI/ESDA/JEDEC JS-001.
ESD Ratings for ADL8150
Table 6. ADL8150, 6-Lead LFCSP
ESD Model Withstand Threshold (V) Class
HBM
±1000
1C
ESD CAUTION
ADL8150 Data Sheet
Rev. 0 | Page 6 of 15
PIN CONFIGURATION AND FUNCTION DESCRIPTIONS
2
1
3
6
5
4
GND
NC
RFIN
RFOUT/VCC
NC
GND
ADL8150
TOP VIEW
(No t t o Scal e)
NOTES
1. NO CO NNE CT. THI S P IN I S NOT CONNECT E D INT E RNALL Y .
THI S P IN MUS T BE CONNECTED TO THE RF AND DC G ROUND.
2. EXPOSED PAD. THE EXPOSED PAD MUST BE CONNECTED TO
RF AND DC G ROUND.
25523-002
Figure 2. Pin Configuration
Table 7. Pin Function Descriptions
Pin No. Mnemonic Description
1 RFIN RF Input. This pin is ac-coupled and matched to 50 Ω. See Figure 5 for the interface schematic.
2, 5 NC No Connect. This pin is not connected internally. This pin must be connected to the RF and dc ground.
3, 6 GND Ground. This pin must be connected to the RF and dc ground. See Figure 3 for the interface schematic.
4 RFOUT/VCC RF Output/Collector Bias for Amplifier. This pin is dc-coupled and matched to 50 Ω. See Figure 4 for the interface
schematic.
EPAD Exposed Pad. The exposed pad must be connected to RF and dc ground.
INTERFACE SCHEMATICS
GND
25523-003
Figure 3. GND Interface Schematic
RFOUT/VCC
25523-004
Figure 4. RFOUT/VCC Interface Schematic
RF
IN
25523-005
Figure 5. RFIN Interface Schematic
Data Sheet ADL8150
Rev. 0 | Page 7 of 15
TYPICAL PERFORMANCE CHARACTERISTICS
ICQ is the collector current without RF signal applied, and ICC is the collector current with RF signal applied.
S11
S21
S22
FREQUENCY (GHz)
5678910 11 12 13 14 15
–15
–10
–5
0
5
10
15
BROADBAND G AIN AND
RETURN LOSS RESPONSE (dB)
25523-006
Figure 6. Broadband Gain and Return Loss Response vs. Frequency
3V
4V
5V
6V
FREQUENCY (GHz)
67 8 9 10 11 12 13 14
0
2
4
6
8
10
12
14
GAI N (dB)
25523-007
Figure 7. Gain vs. Frequency for Various Supply Voltages
3V
4V
5V
6V
FREQUENCY (GHz)
6 7 8 9 10 11 12 13 14
–12
–10
–8
–6
–4
–2
0
INPUT RETURN L OSS ( dB)
25523-008
Figure 8. Input Return Loss vs. Frequency for Various Supply Voltages
+25°C
–40°C
+85°C
FREQUENCY (GHz)
678910 11 12 13 14
0
2
4
6
8
10
12
14
GAI N (dB)
25523-009
Figure 9. Gain vs. Frequency for Various Temperatures
FREQUENCY (GHz)
6 7 8 9 10 11 12 13 14
–12
–10
–8
–6
–4
–2
0
INPUT RETURN L OSS ( dB)
+25°C
–40°C
+85°C
25523-010
Figure 10. Input Return Loss vs. Frequency for Various Temperatures
FREQUENCY (GHz)
678910 11 12 13 14
–12
–10
–8
–6
–4
–2
0
OUTPUT RE TURN L OSS ( dB)
+25°C
–40°C
+85°C
25523-011
Figure 11. Output Return Loss vs. Frequency for Various Temperatures
ADL8150 Data Sheet
Rev. 0 | Page 8 of 15
3V
4V
5V
6V
FREQUENCY (GHz)
678910 1112 13 14
–12
–10
–8
–6
–4
–2
0
OUTPUT RE TURN L OSS ( dB)
25523-012
Figure 12. Output Return Loss vs. Frequency for Various Supply Voltages
3V
4V
5V
6V
FREQUENCY (GHz)
6 7 8 9 10 11 12 13 14
–40
–35
–30
–25
–20
–15
–10
–5
0
REVERSE ISOLATION (dB)
25523-013
Figure 13. Reverse Isolation vs. Frequency for Various Supply Voltages
3V
4V
5V
6V
FREQUENCY (GHz)
678910 1112 13 14
0
1
2
3
4
5
6
7
8
9
10
NOISE FIGURE (dB)
25523-014
Figure 14. Noise Figure vs. Frequency for Various Supply Voltages
FREQUENCY (GHz)
67 8 910 1112 13 14
–40
–35
–30
–25
–20
–15
–10
–5
0
REVERSE ISOLATION (dB)
+25°C
–40°C
+85°C
25523-015
Figure 15. Reverse Isolation vs. Frequency for Various Temperatures
FREQUENCY (GHz)
6 7 8 9 10 11 12 13 14
0
1
2
3
4
5
6
7
8
9
10
NOISE FIGURE (dB)
+25°C
–40°C
+85°C
25523-016
Figure 16. Noise Figure vs. Frequency for Various Temperatures
FREQUENCY (GHz)
678 9 10 11 12 13 14
0
2
4
6
8
10
12
14
16
18
20
22
24
OP1dB (dBm)
+25°C
–40°C
+85°C
25523-017
Figure 17. OP1dB vs. Frequency for Various Temperatures
Data Sheet ADL8150
Rev. 0 | Page 9 of 15
3V
4V
5V
6V
FREQUENCY (GHz)
6 7 8 9 10 1112 13 14
0
2
4
6
8
10
12
14
16
18
20
22
24
OP1dB (dBm)
25523-018
Figure 18. OP1dB vs. Frequency for Various Supply Voltages
3V
4V
5V
6V
FREQUENCY (GHz)
678910 11 12 13 14
0
5
10
15
20
25
PSAT (d Bm)
25523-019
Figure 19. PSAT vs. Frequency for Various Supply Voltages
3V
4V
5V
6V
FREQUENCY (GHz)
678910 11 12 13 14
0
5
10
15
20
25
PAE AT P SAT (%)
25523-020
Figure 20. PAE at PSAT vs. Frequency for Various Supply Voltages
FREQUENCY (GHz)
678 9 10 11 12 13 14
0
4
8
12
16
20
24
28
PSAT (d Bm)
+25°C
–40°C
+85°C
25523-021
Figure 21. PSAT vs. Frequency for Various Temperatures
FREQUENCY (GHz)
678910 11 12 13 14
0
5
10
15
20
25
PAE AT P SAT (%)
+25°C
–40°C
+85°C
25523-022
Figure 22. PAE at PSAT vs. Frequency for Various Temperatures
P
OUT
GAIN
PAE
I
CC
INPUT POW E R ( dBm)
–12 –9 –6 –3 0 3 6 9 12
0
4
8
12
16
20
72
77
82
87
92
97
P
OUT
(d Bm) , GAIN (dB), PAE ( %)
I
CC
(mA)
25523-023
Figure 23. POUT, Gain, PAE, and ICC vs. Input Power, Frequency = 7 GHz
ADL8150 Data Sheet
Rev. 0 | Page 10 of 15
POUT
GAIN
PAE
ICC
INPUT POW E R ( dBm)
–16 –12 –8 –4 04812
0
5
10
15
20
25
70
83
96
109
122
135
POUT (d Bm) , GAIN (dB), PAE ( %)
ICC (mA)
25523-024
Figure 24. POUT, Gain, PAE, and ICC vs. Input Power, Frequency = 10 GHz
6GHz
7GHz
8GHz
9GHz
10GHz
11GHz
12GHz
13GHz
14GHz
INPUT POW E R ( dBm)
–14 –10 –6 –2 2610 14
0.30
0.35
0.40
0.45
0.50
0.55
POWER DISSIPATION (W)
25523-025
Figure 25. Power Dissipation vs. Input Power for Various Frequencies, TA = 85°C
3V
4V
5V
6V
FREQUENCY (GHz)
678910 11 12 13 14
0
5
10
15
20
25
30
35
OI P 3 ( dBm)
25523-026
Figure 26. OIP3 vs. Frequency for Various Supply Voltages, POUT per Tone =
6 dBm, VCC = 5 V
POUT
GAIN
PAE
ICC
INPUT POW E R ( dBm)
–12 –8 –4 04812 16
0
5
10
15
20
25
70
86
102
118
134
150
POUT (d Bm) , GAIN (dB), PAE ( %)
ICC (mA)
25523-027
Figure 27. POUT, Gain, PAE, and ICC vs. Input Power, Frequency = 13 GHz
FREQUENCY (GHz)
6 7 8 9 10 1112 13 14
0
5
10
15
20
25
30
35
40
OI P 3 ( dBm)
+25°C
–40°C
+85°C
25523-028
Figure 28. OIP3 vs. Frequency for Various Temperatures, POUT per Tone = 6 dBm,
VCC = 5 V
FREQUENCY (GHz)
6 7 8 9 10 11 12 13 14
0
10
20
30
40
50
60
70
OI P 2 ( dBm)
+25°C
–40°C
+85°C
25523-029
Figure 29. OIP2 vs. Frequency for Various Temperatures, POUT per Tone = 6 dBm,
VCC = 5 V
Data Sheet ADL8150
Rev. 0 | Page 11 of 15
3V
4V
5V
6V
FREQUENCY (GHz)
6 7 8 9 10 11 12 13 14
0
10
20
30
40
50
60
70
OI P 2 ( dBm)
25523-030
Figure 30. OIP2 vs. Frequency for Various Supply Voltages, POUT per Tone =
6 dBm, VCC = 5 V
6GHz
7GHz
8GHz
9GHz
10GHz
11GHz
12GHz
13GHz
14GHz
P
OUT
PER TONE (dBm)
0 1 2345678
10
20
30
40
50
60
IM 3 ( dBc)
25523-031
Figure 31. Third-Order Intermodulation Distortion (IM3) vs. POUT per Tone for
Various Frequencies at VCC = 4 V
6GHz
7GHz
8GHz
9GHz
10GHz
11GHz
12GHz
13GHz
14GHz
P
OUT
PER TONE (dBm)
012345678
10
20
30
40
50
60
70
IM 3 ( dBc)
25523-032
Figure 32. IM3 vs. POUT per Tone for Various Frequencies at VCC = 6 V
6GHz
7GHz
8GHz
9GHz
10GHz
11GHz
12GHz
13GHz
14GHz
P
OUT
PER TONE (dBm)
01234 5 6 7 8
0
10
20
30
40
50
IM 3 ( dBc)
25523-033
Figure 33. IM3 vs. POUT per Tone for Various Frequencies at VCC = 3 V
6GHz
7GHz
8GHz
9GHz
10GHz
11GHz
12GHz
13GHz
14GHz
P
OUT
PER TONE (dBm)
0123 4 5 6 78
10
20
30
40
50
60
70
IM 3 ( dBc)
25523-034
Figure 34. IM3 vs. POUT per Tone for Various Frequencies at VCC = 5 V
6GHz
7GHz
8GHz
9GHz
10GHz
11GHz
12GHz
13GHz
14GHz
INPUT POW E R ( dBm)
–20 –16 –12 –8 –4 04812
70
78
86
94
102
110
I
CC
(mA)
25523-035
Figure 35. ICC vs. Input Power for Various Frequencies at VCC = 5 V
ADL8150 Data Sheet
Rev. 0 | Page 12 of 15
SUPPLY VOLTAGE (V)
00.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0
–20
0
20
40
60
80
100
I
CC
(mA)
25523-036
Figure 36. ICC vs. Supply Voltage
PHASE NOISE (dBc/Hz)
–140
–145
–150
–155
–160
–165
–170
–175
–180
–185
–190
–195
–200100 1k 10k
FREQUENCY (Hz) 100k
25523-037
Figure 37. Phase Noise vs. Frequency at 10 GHz, POUT = 10 dBm
PHASE NOISE (dBc/Hz)
–140
–145
–150
–155
–160
–165
–170
–175
–180
–185
–190
–195
–200100 1k 10k
FREQUENCY (Hz) 100k
25523-038
Figure 38. Phase Noise vs. Frequency at 10 GHz, POUT = PSAT
PHASE NOISE (dBc/Hz)
–140
–145
–150
–155
–160
–165
–170
–175
–180
–185
–190
–195
–200
100 1k 10k
FREQUENCY (Hz) 100k
25523-039
Figure 39. Phase Noise vs. Frequency at 10 GHz, POUT = P1dB
Data Sheet ADL8150
Rev. 0 | Page 13 of 15
THEORY OF OPERATION
The ADL8150 is a self biased, single 5 V power supply amplifier.
RFIN is ac-coupled, and RFOUT/VCC requires an external bias tee.
Figure 40 shows the simplified block diagram.
RF
OUT
/V
CC
RF
IN
25523-040
Figure 40. Simplified Block Diagram
ADL8150 Data Sheet
Rev. 0 | Page 14 of 15
APPLICATIONS INFORMATION
BIASING PROCEDURES
The ADL8150 is a self biased GaAs, MMIC, HBT, low phase
noise amplifier. Figure 41 shows the typical application circuit.
The choice of L1 and C4 are critical to obtain the performance
specified in this data sheet. L1 is a Coilcraft 0402DF-560XJR,
56 nH inductor. C4 is an American Technical Ceramics,
531Z104KTR16T, 0.1 μF capacitor.
Power the ADL8150 from a well regulated, ultra low noise
power source. The LT3045EDD#PBF ultra low noise, ultrahigh
power supply ripple rejection (PSRR) linear regulator is
recommended.
All of these components are included in the ADL8150
evaluation board circuit. For more details, see the ADL8150-
EVALZ user guide.
Adhere to the following bias sequence during power-up:
1. Connect the VCC pin to the power supply.
2. Set the VCC pin to 5 V.
3. Apply the RF input signal.
Adhere to the following bias sequence during power-down:
1. Turn off the RF input signal.
2. Set the VCC pin t o 0 V.
2
1
3
6
5
4
GND
RF
IN
GND
GND
RF
OUT
L1
56nH
C4
0.1µF
V
CC
C1
4.7µF
C2
10pF
ADL8150
0.01µF
C3
25523-041
Figure 41. Typical Application Circuit
Data Sheet ADL8150
Rev. 0 | Page 15 of 15
OUTLINE DIMENSIONS
1.70
1.60
1.50
0.30
0.25
0.20
TOP VIEW
SIDE VIEW
0.35
0.30
0.25
BOTTOM VIEW
PIN 1 INDEX
AREA
0.90
0.85
0.80
1.10
1.00
0.90
0.203 REF
0.05 M AX
0.02 NO M
1.30 REF
0.65
BSC
EXPOSED
PAD
FOR PRO P E R CONNECTI ON O F
THE EXPOSED PAD, REFER TO
THE PIN CO NFI GURAT IO N AND
FUNCTION DES CRIPTI ONS
SECTION OF THIS DATA SHEET.
08-17-2018-A
PKG-005241
2.05
2.00 SQ
1.95
58
1
4
COPLANARITY
0.08
SEATING
PLANE
PIN 1
IN DICATOR AR EA OP TION S
(SEE DETAIL A)
DETAIL A
(JEDEC 95)
Figure 42. 6-Lead Lead Frame Chip Scale Package [LFCSP]
2 mm × 2 mm Body and 0.85 mm Package Height
(CP-6-12)
Dimensions shown in millimeters
ORDERING GUIDE
Model1, 2
Temperature
Range MSL Rating3 Package Description4 Package Option
ADL8150ACPZN −40°C to +85°C MSL3 6-Lead Lead Frame Chip Scale Package [LFCSP] CP-6-12
ADL8150ACPZN-R7 −40°C to +85°C MSL3 6-Lead Lead Frame Chip Scale Package [LFCSP] CP-6-12
ADL8150-EVALZ Evaluation Board
1 Z = RoHS Compliant Part.
2 When ordering the evaluation board only, reference the model number, ADL8150-EVALZ.
3 See the Absolute Maximum Ratings section for additional information.
4 The lead finish of the ADL8150ACPZN and ADL8150ACPZN-R7 is nickel palladium gold (NiPdAu).
©2020 Analog Devices, Inc. All rights reserved. Trademarks and
registered trademarks are the property of their respective owners.
D25523-10/20(0)