© Semiconductor Components Industries, LLC, 2013
October, 2013 − Rev. 0 1Publication Order Number:
NGTB30N120L2W/D
NGTB30N120L2WG
IGBT - Field Stop II
This Insulated Gate Bipolar Transistor (IGBT) features a robust and
cost effective Field Stop II T rench construction, and provides superior
performance in demanding switching applications, offering both low
on state voltage and minimal switching loss. The IGBT is well suited
for motor driver applications. Incorporated into the device is a soft and
fast co−packaged free wheeling diode with a low forward voltage.
Features
•Extremely Efficient Trench with Field Stop Technology
•TJmax = 175°C
•Soft Fast Reverse Recovery Diode
•Optimized for Low VCEsat
•10 ms Short Circuit Capability
•These are Pb−Free Devices
Typical Applications
•Motor Drive Inverter
•Industrial Switching
•Welding
ABSOLUTE MAXIMUM RATINGS
Rating Symbol Value Unit
Collector−emitter voltage VCES 1200 V
Collector current
@ TC = 25°C
@ TC = 100°C
IC60
30
A
Pulsed collector current, Tpulse
limited by TJmax, 10 ms Pulse,
VGE = 15 V
ICM 120 A
Diode forward current
@ TC = 25°C
@ TC = 100°C
IF60
30
A
Diode pulsed current, Tpulse limited
by TJmax IFM 120 A
Gate−emitter voltage
T ransient gate−emitter voltage
(Tpulse = 5 ms, D < 0.10)
VGE $20
±30 V
Power Dissipation
@ TC = 25°C
@ TC = 100°C
PD534
267
W
Short Circuit Withstand Time
VGE = 15 V, VCE = 500 V, TJ ≤ 150°CTSC 10 ms
Operating junction temperature
range TJ−55 to +175 °C
Storage temperature range Tstg −55 to +175 °C
Lead temperature for soldering, 1/8”
from case for 5 seconds TSLD 260 °C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
30 A, 1200 V
VCEsat = 1.70 V
Eoff = 1.4 mJ
Device Package Shipping
ORDERING INFORMATION
NGTB30N120L2WG TO−247
(Pb−Free) 30 Units / Ra
il
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A = Assembly Location
Y = Year
WW = Work Week
G = Pb−Free Package
MARKING DIAGRAM
G
E
C
TO−247
CASE 340AL
C
G
E
30N120L2
AYWWG
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2
THERMAL CHARACTERISTICS
Rating Symbol Value Unit
Thermal resistance junction−to−case, for IGBT RqJC 0.28 °C/W
Thermal resistance junction−to−case, for Diode RqJC 0.85 °C/W
Thermal resistance junction−to−ambient RqJA 40 °C/W
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)
Parameter Test Conditions Symbol Min Typ Max Unit
STATIC CHARACTERISTIC
Collector−emitter breakdown voltage,
gate−emitter short−circuited VGE = 0 V, IC = 500 mAV(BR)CES 1200 − − V
Collector−emitter saturation voltage VGE = 15 V, IC = 30 A
VGE = 15 V, IC = 30 A, TJ = 175°CVCEsat −
−1.70
2.07 1.90
−V
Gate−emitter threshold voltage VGE = VCE, IC = 400 mAVGE(th) 4.5 5.5 6.5 V
Collector−emitter cut−off current, gate−
emitter short−circuited VGE = 0 V, VCE = 1200 V
VGE = 0 V, VCE = 1200 V, TJ = 175°CICES −
−−
−1.0
2mA
Gate leakage current, collector−emitter
short−circuited VGE = 20 V , VCE = 0 V IGES − − 200 nA
Input capacitance
VCE = 20 V, VGE = 0 V, f = 1 MHz
Cies − 7500 − pF
Output capacitance Coes − 200 −
Reverse transfer capacitance Cres − 140 −
Gate charge total
VCE = 600 V, IC = 30 A, VGE = 15 V
Qg− 310 − nC
Gate to emitter charge Qge − 61 −
Gate to collector charge Qgc − 150 −
SWITCHING CHARACTERISTIC, INDUCTIVE LOAD
T urn−on delay time
TJ = 25°C
VCC = 600 V, IC = 30 A
Rg = 10 W
VGE = 0 V/ 15V
td(on) −116 −ns
Rise time tr− 35 −
T urn−off delay time td(off) − 285 −
Fall time tf− 175 −
Turn−on switching loss Eon − 4.4 − mJ
T urn−off switching loss Eoff − 1.4 −
Total switching loss Ets − 5.8 −
T urn−on delay time
TJ = 175°C
VCC = 600 V, IC = 30 A
Rg = 10 W
VGE = 0 V/ 15V
td(on) −110 −ns
Rise time tr− 36 −
T urn−off delay time td(off) − 300 −
Fall time tf− 331 −
Turn−on switching loss Eon − 5.5 − mJ
T urn−off switching loss Eoff − 2.5 −
Total switching loss Ets − 8.0 −
DIODE CHARACTERISTIC
Forward voltage VGE = 0 V, IF = 30 A
VGE = 0 V, IF = 30 A, TJ = 175°CVF−
−1.50
1.40 1.70
−V
Reverse recovery time TJ = 25°C
IF = 30 A, VR = 400 V
diF/dt = 200 A/ms
trr − 450 − ns
Reverse recovery charge Qrr − 7.85 − mc
Reverse recovery current Irrm − 32 − A
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3
TYPICAL CHARACTERISTICS
Figure 1. Output Characteristics Figure 2. Output Characteristics
VCE, COLLECTOR−EMITTER VOLTAGE (V) VCE, COLLECTOR−EMITTER VOLTAGE (V)
86543210
Figure 3. Output Characteristics Figure 4. Typical Transfer Characteristics
VCE, COLLECTOR−EMITTER VOLTAGE (V) VGE, GATE−EMITTER VOLTAGE (V)
1050
Figure 5. VCE(sat) vs TJ
TJ, JUNCTION TEMPERATURE (°C)
1751501251007550250
3.00
IC, COLLECTOR CURRENT (A)
IC, COLLECTOR CURRENT (A)
VCE, COLLECTOR−EMITTER VOLTAGE (V)
7
VGE = 20 V
to 13 V
TJ = 25°C
9 V
8 V
7 V
8654321
IC, COLLECTOR CURRENT (A)
7
TJ = 150°C
9 V
8 V
7 V
86543210
IC, COLLECTOR CURRENT (A)
7
TJ = −55°C
9 V
8 V TJ = 25°C
TJ = 150°C
200
VGE = 20 V
to 13 V
VGE = 20 V
to 13 V
1234 6789
−75 −50 −25
2.50
2.00
1.50
1.00
0.50
0.00
IC = 60 A
IC = 30 A
IC = 15 A
Figure 6. Typical Capacitance
VCE, COLLECTOR−EMITTER VOLTAGE (V)
908050403020100
100000
C, CAPACITANCE (pF)
100
Cies
Coes
Cres
7060
10 V
11 V
10 V
11 V
7 V
10 V
11 V
120
11 12 13
3.50 TJ = 25°C
120
120
100
80
60
40
20
0
120
100
80
60
40
20
0
10000
1000
100
10
1
100
80
60
40
20
00
100
80
60
40
20
0
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4
TYPICAL CHARACTERISTICS
Figure 7. Diode Forward Characteristics
VF, FORWARD VOLTAGE (V)
3.02.52.01.51.00.50
70
IF, FORWARD CURRENT (A)
TJ = 25°C
TJ = 150°C
60
50
40
30
20
10
0
Figure 8. Typical Gate Charge
QG, GATE CHARGE (nC)
150100500
0
2
4
6
8
12
14
16
VGE, GATE−EMITTER VOLTAGE (V)
200
10 VCE = 600 V
VCE = 600 V
VGE = 15 V
IC = 30 A
Figure 9. Switching Loss vs. Temperature
TJ, JUNCTION TEMPERATURE (°C)
140120100806040200
SWITCHING LOSS (mJ)
160
VCE = 600 V
VGE = 15 V
IC = 30 A
Rg = 10 W
Eoff
Figure 10. Switching Time vs. Temperature
TJ, JUNCTION TEMPERATURE (°C)
140120100806040200
100
1000
SWITCHING TIME (ns)
160
VCE = 600 V
VGE = 15 V
IC = 30 A
Rg = 10 W
tr
td(on)
Figure 11. Switching Loss vs. IC
IC, COLLECTOR CURRENT (A)
453525155
20
SWITCHING LOSS (mJ)
VCE = 600 V
VGE = 15 V
TJ = 150°C
Rg = 10 W
Eoff
Figure 12. Switching Time vs. IC
IC, COLLECTOR CURRENT (A)
100
1000
SWITCHING TIME (ns)
VCE = 600 V
VGE = 15 V
TJ = 150°C
Rg = 10 W
3.5 4.0 250
Eon
6
tf
td(off)
10
Eon
tr
td(on)
tf
td(off)
55 65 75 85 45352515555657585
10
5
4
3
2
1
0
7
18
16
14
12
10
8
6
4
2
0
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5
TYPICAL CHARACTERISTICS
Figure 13. Switching Loss vs. Rg
Rg, GATE RESISTOR (W)
453525155
SWITCHING LOSS (mJ)
VCE = 600 V
VGE = 15 V
TJ = 150°C
IC = 30 A
Eoff
55 65 75 85
Figure 14. Switching Time vs. Rg
Rg, GATE RESISTOR (W)
453525155
SWITCHING TIME (ns)
10000
55 65 75 85
1000
Figure 15. Switching Loss vs. VCE
VCE, COLLECTOR−EMITTER VOLTAGE (V)
550500450400350
SWITCHING LOSS (mJ)
9
650 700 750 800600
Eoff
VGE = 15 V
TJ = 150°C
IC = 30 A
Rg = 10 W
Figure 16. Switching Time vs. VCE
VCE, COLLECTOR−EMITTER VOLTAGE (V)
SWITCHING TIME (ns)
1000
100
Figure 17. Safe Operating Area
VCE, COLLECTOR−EMITTER VOLTAGE (V)
IC, COLLECTOR CURRENT (A)
1000100101
0.01
0.1
1
10
100
1000
50 ms
100 ms
1 ms
dc operation
Single Nonrepetitive
Pulse TC = 25°C
Curves must be derated
linearly with increase
in temperature
Figure 18. Reverse Bias Safe Operating Area
VCE, COLLECTOR−EMITTER VOLTAGE (V)
IC, COLLECTOR CURRENT (A)
1
10
100
1000
VGE = 15 V, TC = 125°C
1000100101
Eon
tr
td(on)
tf
td(off)
VCE = 600 V
VGE = 15 V
TJ = 150°C
IC = 30 A
100
10
Eon
VGE = 15 V
TJ = 150°C
IC = 30 A
Rg = 10 W
tr
td(on)
tf
td(off)
10
10000 10000
14
12
10
8
6
4
2
0
8
7
6
5
4
3
2
1
0550500450400350 650 700 750 800600
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6
TYPICAL CHARACTERISTICS
140
0.01
FREQUENCY (kHz)
Ipk (A)
0.1 1 10 100 1000
Figure 19. Collector Current vs. Switching
Frequency
TC = 110°C
TC = 80°C
VCE = 600 V, RG = 10 W, VGE = 0/15 V
120
100
80
60
40
20
0
Figure 20. IGBT Transient Thermal Impedance
ON−PULSE WIDTH (s)
10.10.010.00011E−06
1
SQUARE−WAVE PEAK R(t) (°C/W)
1E−05
50% Duty Cycle
20%
10%
5%
2%
Single Pulse
RqJA = 0.277
Junction
C1C2
R1R2
Duty Factor = t1/t2
Peak TJ = PDM x ZqJC + TC
Case
Cn
Rn
0.1
0.01
0.001
0.0001 0.001
Ri (°C/W) Ci (J/°C)
0.048747 0.006487
0.043252
0.051703
0.107932
0.025253
0.023120
0.061163
0.092651
1.252250
Figure 21. Diode Transient Thermal Impedance
ON−PULSE WIDTH (s)
SQUARE−WAVE PEAK R(t) (°C/W)
50% Duty Cycle
20%
10%
5%
2%
Single Pulse
0.01
0.1
1
RqJC = 0.848
Junction Case
C1C2
R1R2Rn
Duty Factor = t1/t2
Peak TJ = PDM x ZqJC + TC
Cn
10.10.010.00011E−06 1E−05 0.001
Ri (°C/W) Ci (J/°C)
0.0000580.017247
0.000213
0.022447
0.026328
0.063916
0.118778
0.075016
0.061573
0.145707
0.254415
0.062512
0.014848
0.000446
0.001201
0.001565
0.002662
0.013330
0.051358
0.068631
0.124296
1.608971
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7
PACKAGE DIMENSIONS
TO−247
CASE 340AL
ISSUE A
E2
L1
D
L
b4
b2
b
E
0.25 MBA
M
cA1
A
123
B
e
2X
3X
0.635 MBA
M
A
S
P
SEATING
PLANE
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. SLOT REQUIRED, NOTCH MAY BE ROUNDED.
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH.
MOLD FLASH SHALL NOT EXCEED 0.13 PER SIDE. THESE
DIMENSIONS ARE MEASURED AT THE OUTERMOST
EXTREME OF THE PLASTIC BODY.
5. LEAD FINISH IS UNCONTROLLED IN THE REGION DEFINED BY
L1.
6. ∅P SHALL HAVE A MAXIMUM DRAFT ANGLE OF 1.5° TO THE
TOP OF THE PART WITH A MAXIMUM DIAMETER OF 3.91.
7. DIMENSION A1 TO BE MEASURED IN THE REGION DEFINED
BY L1.
DIM MIN MAX
MILLIMETERS
D20.30 21.40
E15.50 16.25
A4.70 5.30
b1.00 1.40
b2 1.65 2.35
e5.45 BSC
A1 2.20 2.60
c0.40 0.80
L19.80 20.80
Q5.40 6.20
E2 4.32 5.49
L1 3.50 4.50
P3.55 3.65
S6.15 BSC
b4 2.60 3.40
NOTE 6
4
NOTE 7
Q
NOTE 4
NOTE 3
NOTE 5
E2/2
NOTE 4
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