TLP120
2002-09-25
1
TOSHIBA Photocoupler GaAs Ired & Photo-Transistor
TLP120
Programmable Controllers
AC / DC−Input Module
Telecommunication
The TOSHIBA mini flat coupler TLP120 is a small outline coupler,
suitable for surface mount assembly.
TLP120 consists of a photo transistor, optically coupled to two gallium
arsenide infrared emitting diode connected inverse parallel, and can
operate directly by AC input current.
l Collector−emitter voltage: 80 V (min.)
l Current transfer ratio: 50% (min.)
Rank GB: 100% (min.)
l Isolation voltage: 3750Vrms (min.)
l UL recognized: UL1577, file no. E67349
Pin Configurations (top view)
1
3
6
4
1： Anode
Cathode
3： Cathode
Anode
4： Emitter
6： Collector
TOSHIBA 11−4C1
Weight: 0.09 g
Unit in mm
TLP120
2002-09-25
2
Maximum Ratings (Ta = 25°C)
Characteristic Symbol Rating Unit
Forward current IF(RMS) 50 mA
Forward current derating ∆IF / °C -0.7 (Ta ≥ 53°C) mA / °C
Pulse forward current IFP 1 (100µs pulse, 100pps) A
LED
Junction temperature Tj 125 °C
Collector-emitter voltage VCEO 80 V
Emitter-collector voltage VECO 7 V
Collector current IC 50 mA
Collector power dissipation PC 150 mW
Collector power dissipation
derating (Ta ≥ 25°C) ∆PC / °C -1.5 mW / °C
Detector
Junction temperature Tj 125 °C
Storage temperature range Tstg -55~125 °C
Operating temperature range Topr -55~100 °C
Lead soldering temperature Tsol 260 (10s) °C
Total package power dissipation PT 200 mW
Total package power dissipation
derating (Ta ≥25°C) ∆PT / °C -2.0 mW / °C
Isolation voltage (Note 1) BVS 3750 (AC, 1min., R.H. ≤ 60%) Vrms
(Note 1) Device considered a two terminal device: Pins1, 3 shorted together and pins 4, 6 shorted together.
Recommended Operating Conditions
Characteristic Symbol Min. Typ. Max. Unit
Supply voltage VCC ― 5 48 V
Forward current IF(RMS) ― 16 20 mA
Collector current IC ― 1 10 mA
Operating temperature Topr -25 ― 85 °C
TLP120
2002-09-25
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Individual Electrical Characteristics (Ta = 25°C)
Characteristic Symbol Test Condition Min. Typ. Max. Unit
Forward voltage VF I
F = ±10 mA 1.0 1.15 1.3 V
LED
Capacitance CT V = 0, f = 1 MHz — 60 — pF
Collector-emitter
breakdown voltage V(BR)CEO I
C = 0.5 mA 80 — — V
Emitter-collector
breakdown voltage V(BR)ECO I
E = 0.1 mA 7 — — V
VCE = 48 V — 10 100 nA
Collector dark current ICEO
VCE = 48 V, Ta = 85°C — 2 50 µA
Detector
Capacitance
(collector to emitter) CCE V = 0, f = 1 MHz — 10 — pF
Coupled Electrical Characteristics (Ta = 25°C)
Characteristic Symbol Test Condition MIn. Typ. Max. Unit
50 — 600
Current transfer ratio IC / IF IF = ±5 mA, VCE = 5 V
Rank GB 100 — 600
%
— 60 —
Saturated CTR IC / IF (sat) IF = ±1 mA, VCE = 0.4 V
Rank GB 30 — —
%
IC = 2.4 mA, IF = ±8 mA — — 0.4
— 0.2 —
Collector-emitter
saturation voltage VCE (sat) IC = 0.2 mA, IF = ±1 mA
Rank GB — — 0.4
V
Off-state collector current IC(off) V
F = ± 0.7V, VCE = 48 V — 1 10 µA
CTR symmetry IC (ratio) IC (IF = -5mA) / IC (IF = 5mA) 0.33 1 3 —
Isolation Characteristics (Ta = 25°C)
Characteristic Symbol Test Condition Min. Typ. Max. Unit
Capacitance
(input to output) CS VS = 0, f = 1 MHz — 0.8 — pF
Isolation resistance RS VS = 500 V, R.H. ≤ 60% 5×1010 1014 — Ω
AC, 1 minute 3750 — —
AC, 1 second, in oil — 10000 —
Vrms
Isolation voltage BVS
DC, 1 minute, in oil — 10000 — Vdc
TLP120
2002-09-25
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Switching Characteristics (Ta = 25°C)
Characteristic Symbol Test Condition Min. Typ. Max. Unit
Rise time tr — 2 —
Fall time tf — 3 —
Turn-on time ton — 3 —
Turn-off time toff
VCC = 10 V, IC = 2 mA
RL = 100Ω
— 3 —
µs
Turn-on time tON — 2 —
Storage time ts — 25 —
Turn-off time tOFF
RL = 1.9 kΩ (Fig.1)
VCC = 5 V, IF = ±16 mA
— 40 —
µs
Fig. 1 Switching time test circuit
VCE
VCC
RL
IF
tOFF
tON
0.5V
VCE
IF
tS
4.5V
VCC
TLP120
2002-09-25
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Ambient temperature Ta (°C)
60 120 40 80 20 0
80
60
40
20
0
Allowable forward current
IF (mA)
I
F – Ta
100
-20 100
P
C – Ta
Ambient temperature Ta (°C)
0 20 40 60 80
40
80
120
200
Allowable collector power
dissipation PC (mW)
- 20
160
0
100 120
Pulse forward current
IFP (mA)
IFP – DR
Duty cycle ratio DR
3000
3
1000
500
50
10
100 10-1 10-2
10-3 3 3 3
300
100
30
ΔVF / ΔＴa – IF
Forward current IF (mA)
0.1 0.3 3 5 50 1
-3.2
-2.8
-2.4
-2.0
-1.6
-1.2
-0.8
-0.4
30 10 0.5
Forward voltage temperature
coefficient ΔVF /ΔＴa（mＶ/ ℃）
IFP - VFP
Pulse forward voltage VFP (V)
Pulse forward current IFP (mA)
1000
300
50
30
3.0 2.6 2.2 1.8 1.4 0.6
10
100
5
3
1
Pulse width ≤10µs
Repetitive
Frequency = 100Hz
Ta = 25°C
500
1.0
IF - VF
Forward voltage VF (V)
Forward current IF (mA)
100
0.4
3
30
0.5
0.8 1.2 1.6
0.1
1.8 1.4
0.3
1
5
10
50 Ta = 25°C
1.0
Pulse width ≤100µs
Ta = 25°C
TLP120
2002-09-25
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ICEO - Ta
Ambient temperature Ta (°C)
Collector dark current ICEO (µA)
101
120 100
80 60
40
20 0
24V
10V
5V
VCE = 48V
100
10-1
10-2
10-3
10-4
IC – VCE
Collecor-emitter voltage VCE (V)
Collector current IC (mA)
50
0
40
2 4 6 8 10
30
20
0
10
Ta = 25°C
10mA
15mA
20mA
50mA
PC(MAX)
IF = 5mA
30mA
Forward current IF (mA)
Collector current IC (mA)
30
0.3
1
10
3
0.3 3
100
1 5 50 100
30
10 0.5
0.5
5
Ta = 25°C
SAMPLE B
SAMPLE A
VCE = 10V
VCE = 5V
VCE = 0.4V
50
IC / IF - IF
Forward current IF (mA)
100 50 30 10 5 3 0.5 1
1000
500
300
100
50
30
Current transfer ratio IＣ / IF (%)
SAMPLE B
SAMPLE A
Ta = 25°C
0.3
VCE = 10V
VCE = 5V
VCE = 0.4V
IC - VCE
30
0 0.2 0.4 0.6 0.8
20
10
0
Collector-emitter voltage VCE (V)
Ta = 25°C
Collector current IC (mA)
1.0
20mA
30mA
40mA
10mA
5mA
2mA
IF = 50mA
TLP120
2002-09-25
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IC - Ta
Ambient temperature Ta (°C)
Collector current IC (mA)
100
100
80 60
20
0
-20
0.1
10
5
IF = 25mA
1
0.5
0.3
0.5
1
3
5
10
30
50
VCE = 5V
40
Switching Time - RL
Load resistance RL (kΩ)
Switching time (µs)
100 50 30 10 5 3 1
1
tOFF
ts
tON
Ta = 25°C
IF = 16mA
VCC = 5V
3
5
10
30
50
300
500
1000
100
VCE(sat) – Ta
Ambient temperature Ta (°C)
Collector-emitter saturation
voltage VCE(sat) (V)
0.24
0
0.20
20 40 60 80 100
0.16
0.08
0
0.04
-20 -40
0.12
IF = 5mA
IC = 1mA
TLP120
2002-09-25
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devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of
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such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability
Handbook” etc..
· The TOSHIBA products listed in this document are intended for usage in general electronics applications
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
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document shall be made at the customer’s own risk.
· Gallium arsenide (GaAs) is a substance used in the products described in this document. GaAs dust and fumes
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· The information contained herein is subject to change without notice.
000707EBC
RESTRICTIONS O N PRODUCT USE
