CHT3091a
Ref. : DSCHT30919139 1/4 Specif i cations subject to change without not i ce
United Monolithic Semiconductors S.A.S.
Route Départementale 128 - B.P.46 - 91401 Orsay Cedex France
Tel. : +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
DC-40GHz ATTENUATOR
GaAs Monolithic M i crowave IC
Description
The CHT3091a is a variable DC-40GHz
attenuator designed for a wide range of
applications, from military to commercial
communication systems. The backside of the
chip is both RF and DC grounds. This helps
simplify the assembly process.
The circuit is manufactured with a MESFET
process, 0.7µm gate length, via holes through
the substrate and air bridges.
Main Features
■ Broadband performances : DC-40GHz
■ 15dBm minimum input 1dB compression point
( any attenuation)
■ DC bias : -5V<VS<0V ; -5V<VP<0V
■ Chip size : 0.91 x 0.86 x 0.10 mm
.
Main Characteristics
Tamb. = 25°C
Symbol Parameter Min Typ Max Unit
Fin Input frequency range DC 40 GHz
Min Att. Minimum attenuation |S21| (VS=0V;VP=-5V) 3 dB
Max Att. Maximum attenuation |S21| (VS=-5V;VP=0V) 20 dB
VSWRin Input VSWR (any attenuation) 2.:1
VSWRout Output VSWR (any attenuation) 2.:1
Pin1dB Input 1dB compression point.(any attenuation) 15 dBm
ESD Protection : Electrostatic discharge sensitive device. Observe handling precautions !
CHT3091a DC-40GHz Attenuator
Ref. : DSCHT30919139 2/4 Specif i cations subject to change without not i ce
Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
Absolute Maximum Ratings
Tamb. = 25°C (1)
Symbol Parameter Values Unit
VP VP control voltage -6V V
VS VS control voltage -6V V
Pin RF input power 20 dBm
Ta Operating temperature range -40 to +85 °C
Tstg Storage temperature range -55 to +155 °C
(1) Operation of this device above anyone of these parameters may cause permanent damage.
Chip Assembly and Mechanical Data
Note : Supply feed should be capacitively bypassed. 25µm diameter gold wire is to be prefered.
Bonding pad positions.
( Chip thickness : 100µm. All dimensions are in micrometers )
DC-40GHz Attenuator CHT3091a
vvRef. : DSCHT30919139 3/4 Specificati ons subject to change without notice
Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
Typical Results
Chip Typical Response ( On wafer Sij ) :
Tamb = +25°C
Vp = 0V to -5V & Vs = -5V to 0V
-30
-28
-26
-24
-22
-20
-18
-16
-14
-12
-10
-8
-6
-4
-2
0
-5 -4 -3 -2 -1 0
Vp Cont ro l Vo lt ag e ( Volt ) with Vs = -5 - Vp
Insertion Loss ( dB )
5
10
20
30
40
CHT3091
Insertion Loss vs Control Voltages
as Function of FREQUENCY ( GHz )
Freq uency ( G Hz )
-30
-28
-26
-24
-22
-20
-18
-16
-14
-12
-10
-8
-6
-4
-2
0
0 5 10 15 20 25 30 35 40 45 50 55 60
Frequency ( GHz )
Insertion Loss ( dB )
CHT3091
Gain control
CHT3091a DC-40GHz Attenuator
Ref. : DSCHT30919139 4/4 Specif i cations subject to change without not i ce
Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
-30
-28
-26
-24
-22
-20
-18
-16
-14
-12
-10
-8
-6
-4
-2
0
0 5 10 15 20 25 30 35 40 45 50 55 60
Frequency ( GHz )
Input R eturn Loss ( dB )
CHT3091
Input Return Loss
-30
-28
-26
-24
-22
-20
-18
-16
-14
-12
-10
-8
-6
-4
-2
0
0 5 10 15 20 25 30 35 40 45 50 55 60
Frequency ( GHz )
Output Return Loss ( dB )
CHT3091
Output Return Loss
Orderi ng I nfor mation
Chip for m : CHT3091a- 99F/00
Information furnished is believed to be accurate and reliable. However United Monolithic Semiconductors
S.A.S. assumes no responsibility for the consequences of use of such information nor for any infringement of
patents or other rights of third parties which may result from its use. No license is granted by implication or
otherwise under any patent or patent rights of United Monolithic Semiconductors S.A.S.. Specifications
mentioned in this publication are subject to change without notice. This publication supersedes and replaces all
information previously supplied. United Monolithic Semiconductors S.A.S. products are not authorised for use
as critical components in life support devices or systems without express written approval from United
Monolithic Semiconductors S.A.S.